CN105047574B - A kind of change measurement method for distance for the horizontal broadening in mercury-cadmium tellurid detector N areas - Google Patents
A kind of change measurement method for distance for the horizontal broadening in mercury-cadmium tellurid detector N areas Download PDFInfo
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- CN105047574B CN105047574B CN201510295755.3A CN201510295755A CN105047574B CN 105047574 B CN105047574 B CN 105047574B CN 201510295755 A CN201510295755 A CN 201510295755A CN 105047574 B CN105047574 B CN 105047574B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The invention discloses a kind of change measurement method for distance for the horizontal broadening in mercury-cadmium tellurid detector N areas, this method is on the infrared chip of mercury cadmium telluride for having prepared ZnS barrier layers and alignment mark, by photoetching process, a series of ion implantation mask of different spacing PN junctions is designed.Passivation layer and metallized Ohmic contact are prepared by common process again after ion implanting, a series of resolution chart of different spacing PN junction broadenings is peeled off and obtain.Finally, Current Voltage test is carried out to each pair PN junction with low temperature cold probe system, and judges horizontal broadening width by combining Current Voltage test result analysis and each pair PN junction spacing.The inventive method is simple to operate, is easy to implement on-line analysis PN junction knot wide.
Description
Technical field：
The present invention relates to infrared detector manufacturing process technology, and in particular to HgCdTe infrared focal plane detector PN junction
The method of testing of N areas width extending transversely.
Background technology：
Infrared focal plane array device is that not only there is infrared information to obtain but also the advanced imaging with the information processing function
Sensor, in earth observation from space, photoelectronic warfare, Search/Track, has been used and industrial thermal imaging and guided missile precise guidance etc.
Military-civil field has important and is widely applied.Due to its irreplaceable status and effect, infrared focal plane array device
Technology of preparing is listed in the high technology item given priority to.
Under the driving energetically of senior infrared application system, infrared detector technology has been had been enter into large area array, miniaturization
With the important development stage of the third generation infrared focal plane detector with the characteristics of multicolor etc..Infrared focal plane detector of new generation
Towards the development of large area array, long alignment and intelligent direction.Expansion and photosensitive first integrated level with detector size are not
It is disconnected to improve, it is desirable to which that the pixel dimension of infrared detector photosensitive sense element array constantly reduces.This is to infrared focal plane photovoltaic detector
For, it is necessary to by accurately controlling the physical dimension of PN junction, to ensure that high density, small pixel dimension infrared detector still have height
Responsiveness and the photoelectric properties such as detectivity.Therefore, accurately measure in time and feed back PN junction transverse width to infrared detector
Design and processes control it is extremely important.
The laser beam induced current method generally used, is a kind of method that can accurately measure PN junction two-dimensional.But
It is that this method individually designed test structure and must will be encapsulated into test Dewar and be measured under liquid nitrogen temperature, and process is complicated
Cycle is longer, it is impossible to realize on-line testing, so as to influence the timely judgement of infrared focal plane detector ion implantation technology.In reality
In the HgCdTe infrared detector preparation process on border, it can in time measure and to feed back PN junction two-dimensional structure information extremely important,
Had very important significance for improving technological design accuracy and saving technique preparation cost.But, the current country is not yet
See the pertinent literature report about the wide on-line testing method of HgCdTe infrared focal plane detector PN junction.
The content of the invention：
Based on above mentioned problem, it is an object of the invention to provide between a kind of change for the horizontal broadening in mercury-cadmium tellurid detector N areas
Distance measurement method.
To achieve the above object, the present invention is first using the chip for having prepared ZnS barrier layers and alignment mark；Then lead to
Photoetching process is crossed, a series of ion implantation mask of different spacing PN junctions is designed；Prepared again by common process after ion implanting
Passivation layer and metallized Ohmic contact, peel off and obtain a series of resolution chart of different spacing PN junction broadenings；Finally, low temperature is used
Cold probe system carries out Current Voltage test to each pair PN junction, and by combining Current Voltage test result analysis and each pair PN junction
Spacing judges horizontal broadening width.
The method of testing of the horizontal broadening in the cadmium-telluride-mercury infrared detector N areas of above-mentioned technical proposal is as follows：
1) photoetching ion implanting hole：On the infrared chip of mercury cadmium telluride for having prepared ZnS barrier layers and alignment mark, use
Positive photoresist photoetching obtains a series of ion implanting hole pair of different spacing, and each pair ion implanting pitch of holes changes 10 μ from 0 μm
m；
2) boron ion is injected：Ion energy is 120-180KeV, and dosage is 1 × 1013-1×1015cm-2, line is 50-
200 μ A, immersion removes photoresist in acetone after injection, obtains a series of spacing from the PN junction pair of 0 μm of 10 μm of change；
3) passivation and corroding electrode hole：Using conventional CdTe and ZnS dual layer passivations technique.Positive photoresist photoetching is used again
Corroding electrode hole is outputed on each PN hand-holes, is corroded in freezing point pure hydrochloric acid, clock is soaked after drying in acetone and removes light
Photoresist；
4) prepared by metal electrode：Metal electrode is outputed in each electrode hole using positive photoresist photoetching and prepares hole, is used
Electron beam evaporation equipment prepares the Sn and Au that thickness is respectively 30nm, 100nm, is soaked in acetone after taking out sample, peels off gold
Category and removal photoresist；
5) Current Voltage is tested：Test spacing is carried out from 0 μm of change using the low temperature cold probe test systems of Keithly 4200
Change 10 μm of each pair PN junction current-voltage characteristics；
6) test result analysis：The changing rule that spacing changes 10 μm of each pair PN junction current-voltage characteristics from 0 μm is analyzed, such as
Fruit motional impedance is presented a steady state value with voltage and is then determined as two PN junction connections, and motional impedance shows two instead with voltage
Then it is determined as that two PN junctions are not connected to the PN junction characteristic of connection；
7) the horizontal broadening in PN junction N areas judges：By the connectedness and each pair PN junction spacing that combine different spacing each pair PN junctions
Relation, judge the horizontal broadening width in PN junction N areas.
It is an advantage of the invention that：Dexterously by designing the photosensitive first spacing of each pair, yardstick test is changed into electrical testing, energy
It is prevented effectively from because of the error that yardstick measuring accuracy is brought.This change measurement method for distance, with technique is simple, simple operation, sentences
Determine visual result and can on-line testing the features such as analyze.
Brief description of the drawings：
Fig. 1 is process chart.
Fig. 2 is becomes the schematic diagram after PN pairs of distance measurement method different spacing and metallization, and wherein Fig. 2 (a) surveys to become spacing
The each pair difference spacing N areas schematic diagram of amount method, Fig. 2 (b) is each pair difference spacing N areas schematic diagram with metallic electrode.
Fig. 3 is change distance measurement method difference spacing PN to cold probe current voltage characteristic test result, Fig. 3 (a) under 80K
Single PN current-voltage characteristic test result under different injection conditions, Fig. 3 (b) difference spacing PN are tested current-voltage characteristic
As a result.
Embodiment：
Below in conjunction with the accompanying drawings, embodiments of the present invention are elaborated with example：
1) photoetching ion implanting hole：On the infrared chip of mercury cadmium telluride for having prepared ZnS barrier layers and alignment mark, use
Positive photoresist photoetching obtains a series of ion implanting hole pair of different spacing, and each pair ion implanting pitch of holes changes 10 μ from 0 μm
Shown in m, such as Fig. 2 (a)；
2) boron ion is injected：Ion energy is 120-180KeV, and dosage is 1 × 1013-1×1015cm-2, line is 50-
200μA.Soaked in acetone after injection, remove photoresist；
3) passivation and corroding electrode hole：Using conventional CdTe and ZnS dual layer passivations technique.Positive photoresist photoetching is used again
Corroding electrode hole is outputed on each PN hand-holes.Corrode in freezing point pure hydrochloric acid, immersion removes photoetching in acetone after drying
Glue；
4) prepared by metal electrode：Metal electrode is outputed in each electrode hole using positive photoresist photoetching and prepares hole.Use
Electron beam evaporation equipment prepares the Sn and Au that thickness is respectively 30nm, 100nm.Soaked in acetone after taking out sample, use syringe
Impact peel metal and removal photoresist, are obtained as shown in Fig. 2 (b)；
5) Current Voltage is tested：Using the test systems of Keithly 4200 to each PN junction to carrying out current-voltage characteristic survey
Examination, test result is as shown in Figure 3；
6) test result analysis：The changing rule that spacing changes 10 μm of each pair PN junction current-voltage characteristics from 0 μm is analyzed, such as
Fruit motional impedance is presented a steady state value with voltage and is then determined as two PN junction connections, and motional impedance shows two instead with voltage
Then it is determined as that two PN junctions are not connected to the PN junction characteristic of connection；
7) the horizontal broadening of PN junction judges：By the pass of the connectedness and each pair PN junction spacing that combine different spacing each pair PN junctions
System, judges the horizontal broadening width in PN junction N areas.
The PN junction performance of different injection conditions is can be seen that without bright from the Current Voltage test result of each PN junctions of Fig. 3 (a)
Significant difference is different；From the Current Voltage test result of each PN junctions pair of Fig. 3 (b), it can determine whether PN junction to when spacing is 1 μm, dynamic hinders
Anti- is a steady state value with voltage change；And spacing is more than after 2 μm, motional impedance shows two back-to-back PN with voltage change
Junction characteristic.Therefore the unilateral broadening in each N areas should be less than 0.5 μm, and the horizontal broadening in each N areas is less than 1 μm.
Claims (1)
1. a kind of change measurement method for distance for the horizontal broadening in mercury-cadmium tellurid detector N areas, its feature comprises the following steps：
1) photoetching ion implanting hole：On the infrared chip of mercury cadmium telluride for having prepared ZnS barrier layers and alignment mark, using positivity
Photoresist photoetching obtains a series of ion implanting hole pair of different spacing, and each pair ion implanting pitch of holes is from 0 μm according to 1 μm of change
Change interval variation to 10 μm；
2) boron ion is injected：Ion energy is 120-180KeV, and dosage is 1 × 1013-1×1015cm-2, line is 50-200 μ A,
Immersion removes photoresist in acetone after injection, obtains a series of spacing from the PN junction pair of 0 μm of 10 μm of change；
3) passivation and corroding electrode hole：Using conventional CdTe and ZnS dual layer passivations technique, then using positive photoresist photoetching every
Corroding electrode hole is outputed on individual PN hand-holes, is corroded in freezing point pure hydrochloric acid, immersion removes photoresist in acetone after drying；
4) prepared by metal electrode：Metal electrode is outputed in each electrode hole using positive photoresist photoetching and prepares hole, electronics is used
Beam evaporation equipment successively prepares the Au that the Sn and thickness that thickness is 30nm are 100nm, is soaked in acetone after taking out sample, shells
From metal and removal photoresist；
5) Current Voltage is tested：Test spacing is carried out from 0 μm of 10 μ of change using the low temperature cold probe test systems of Keithly 4200
M each pair PN junction current-voltage characteristics；
6) test result analysis：Spacing is analyzed from the changing rule of 0 μm of change, 10 μm of each pair PN junction current-voltage characteristics, if dynamic
State impedance is presented a steady state value with voltage and is then determined as two PN junction connections, and motional impedance shows two with voltage and reversely connected
The PN junction characteristic connect is then determined as that two PN junctions are not connected；
7) the horizontal broadening in PN junction N areas judges：By the pass of the connectedness and each pair PN junction spacing that combine different spacing each pair PN junctions
System, judges the horizontal broadening width in PN junction N areas.
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| CN107342219A (en) * | 2017-06-29 | 2017-11-10 | 中国电子科技集团公司第十研究所 | A kind of wet etching method of p-type HgCdTe composite film contact holes |
| CN109378280B (en) * | 2018-11-21 | 2023-09-12 | 中国科学院上海技术物理研究所 | Test structure for high-density area array performance verification |
| CN111403502A (en) * | 2020-03-30 | 2020-07-10 | 中国电子科技集团公司第十一研究所 | Method for preparing contact electrode of infrared detector chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1812140A (en) * | 2005-12-06 | 2006-08-02 | 淮阴师范学院 | Ion injectivity optimizing method for photovoltaic infrared detector tellerium-cadmium-mercury materials |
| CN101170150A (en) * | 2007-11-21 | 2008-04-30 | 中国科学院上海技术物理研究所 | Cleaning method for ion injection damage layer of plane Te-Cd optical voltage part |
| CN101226971A (en) * | 2008-02-01 | 2008-07-23 | 中国科学院上海技术物理研究所 | Method for reducing ion implantation damage influence of mercury cadmium telluride photovoltaic device |
| US9455369B2 (en) * | 2009-12-01 | 2016-09-27 | Selex Galileo Limited | Infra red detectors and methods of manufacturing infra red detectors using MOVPE |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1812140A (en) * | 2005-12-06 | 2006-08-02 | 淮阴师范学院 | Ion injectivity optimizing method for photovoltaic infrared detector tellerium-cadmium-mercury materials |
| CN101170150A (en) * | 2007-11-21 | 2008-04-30 | 中国科学院上海技术物理研究所 | Cleaning method for ion injection damage layer of plane Te-Cd optical voltage part |
| CN101226971A (en) * | 2008-02-01 | 2008-07-23 | 中国科学院上海技术物理研究所 | Method for reducing ion implantation damage influence of mercury cadmium telluride photovoltaic device |
| US9455369B2 (en) * | 2009-12-01 | 2016-09-27 | Selex Galileo Limited | Infra red detectors and methods of manufacturing infra red detectors using MOVPE |
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