CN105047532B - 在SiC材料中获取二维电子气的方法 - Google Patents
在SiC材料中获取二维电子气的方法 Download PDFInfo
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- CN105047532B CN105047532B CN201510366654.0A CN201510366654A CN105047532B CN 105047532 B CN105047532 B CN 105047532B CN 201510366654 A CN201510366654 A CN 201510366654A CN 105047532 B CN105047532 B CN 105047532B
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- 239000000463 material Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000005533 two-dimensional electron gas Effects 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims 5
- 230000005669 field effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 69
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 57
- 230000010287 polarization Effects 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000012010 growth Effects 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910000238 buergerite Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
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CN201510366654.0A CN105047532B (zh) | 2015-06-29 | 2015-06-29 | 在SiC材料中获取二维电子气的方法 |
Applications Claiming Priority (1)
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CN201510366654.0A CN105047532B (zh) | 2015-06-29 | 2015-06-29 | 在SiC材料中获取二维电子气的方法 |
Publications (2)
Publication Number | Publication Date |
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CN105047532A CN105047532A (zh) | 2015-11-11 |
CN105047532B true CN105047532B (zh) | 2018-10-02 |
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CN201510366654.0A Active CN105047532B (zh) | 2015-06-29 | 2015-06-29 | 在SiC材料中获取二维电子气的方法 |
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CN (1) | CN105047532B (zh) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104600108A (zh) * | 2014-12-31 | 2015-05-06 | 中国电子科技集团公司第五十五研究所 | 一种氮化物高电子迁移率晶体管外延结构及其制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6593193B2 (en) * | 2001-02-27 | 2003-07-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
JP2008068498A (ja) * | 2006-09-13 | 2008-03-27 | Fujifilm Corp | セルロースアシレートフィルム及びその製造方法 |
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2015
- 2015-06-29 CN CN201510366654.0A patent/CN105047532B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104600108A (zh) * | 2014-12-31 | 2015-05-06 | 中国电子科技集团公司第五十五研究所 | 一种氮化物高电子迁移率晶体管外延结构及其制备方法 |
Non-Patent Citations (1)
Title |
---|
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD;Xiaoliang Wang等;《Journal of Crystal Growth》;20061208;第298卷;第835-839页 * |
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Effective date of registration: 20200522 Address after: 361000 room 3194, Xuanye building, Chuangyuan, torch high tech Zone, Xiamen City, Fujian Province Patentee after: Xiamen Shockley Energy Technology Co.,Ltd. Address before: 100083 No. 35, Qinghua East Road, Beijing, Haidian District Patentee before: Institute of Semiconductors, Chinese Academy of Sciences |
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Effective date of registration: 20231030 Address after: Room 301E, South Building, Weiye Building, Entrepreneurship Park, Xiamen Torch High tech Zone, Xiamen, Fujian Province, 361000 Patentee after: Xiamen purple silicon semiconductor technology Co.,Ltd. Address before: Room 3194, Xuanye Building, Entrepreneurship Park, Torch High tech Zone, Xiamen City, Fujian Province, 361000 Patentee before: Xiamen Shockley Energy Technology Co.,Ltd. |
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