CN105006506A - Luminescence apparatus - Google Patents
Luminescence apparatus Download PDFInfo
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- CN105006506A CN105006506A CN201410153276.3A CN201410153276A CN105006506A CN 105006506 A CN105006506 A CN 105006506A CN 201410153276 A CN201410153276 A CN 201410153276A CN 105006506 A CN105006506 A CN 105006506A
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Abstract
The invention discloses a luminescence apparatus. The luminescence apparatus comprises a luminescence lamination which comprises a first surface and a second surface opposite to the first surface and emits light having a wavelength ranging from 365 nanometers to 550 nanometers; and a first electrode which is formed on the first surface and comprises a first metal layer and a second metal layer which are repeatedly overlapped, wherein the reflectivity of the first electrode relative to the light is greater than 95%, the thermal stability of the first metal layer is higher than that of the second metal layer, and the reflectivity of the second metal layer relative to the light is higher than that of the first metal layer.
Description
Technical field
The present invention relates to a kind of light-emitting device, particularly relate to a kind of light-emitting device with reflector.
Background technology
The principle of luminosity of light-emitting diode (LED) gives off energy because electronics is displaced between n-type semiconductor and p-type semiconductor.Principle of luminosity due to light-emitting diode is different from the incandescent lamp of heat filament, so light-emitting diode is also known as making cold light source.Moreover, light-emitting diode preferably environmental resistance degree, longer useful life, lighter and portability and lower power consumption allow it be regarded as light source in illumination market another select.Light-emitting diode is applied to as different field such as traffic sign, backlight module, street lamp and Medical Devices, and little by little replaces conventional light source.
The luminous lamination epitaxial growth that light-emitting diode has is on an electrically-conductive backing plate or on an insulated substrate.The light-emitting diode with electrically-conductive backing plate can form an electrode at luminous lamination top, is commonly referred to as vertical LED.The light-emitting diode with insulated substrate then needs the semiconductor layer being exposed two opposed polarities by etching process, and on two semiconductor layers, forms electrode respectively, is commonly referred to as horizontal light emitting diode.The advantage of vertical LED is that electrode shading-area is few, good heat dissipation effect and without extra etching extension manufacture craft, but being used for the electrically-conductive backing plate of growth extension at present has easy light-absorbing problem, thus affects the luminous efficiency of light-emitting diode.The advantage of horizontal light emitting diode is that insulated substrate is also transparency carrier usually, and light can penetrate from all directions of light-emitting diode, but has the shortcomings such as poor heat radiation, electrode shading-area are many, extension etching process loss light-emitting area.
Above-mentioned light-emitting diode further can be connected to other elements to form a light-emitting device.Light-emitting diode is connected on a carrier by that side with substrate, or is formed at secondary between carrier and light-emitting diode with solder or glue material, to form a light-emitting device.In addition, secondary carrier can also comprise a circuit, and it is by being such as the electrode that the conductive structure of a metal wire is electrically connected on light-emitting diode.
Summary of the invention
For solving the problem, the present invention discloses a kind of light-emitting device, comprises: a luminous lamination comprises a first surface and the relative first surface of a second surface, and luminous lamination sends a light and has wavelength between 365 nanometers and 550 nanometers; And one first electrode to be formed on first surface and to comprise a first metal layer and one second metal level is repeatedly overlapping, the reflectivity that wherein the first electrode has a relative light be greater than 95% and the thermal stability of the first metal layer higher than the second metal level, and the second metal level for the reflectivity of light higher than the first metal layer.
The present invention also discloses a kind of light-emitting device, comprise: a luminous lamination comprises a first surface and the relative first surface of a second surface, luminous lamination sends a light and has wavelength between 365 nanometers and 550 nanometers, and first surface comprise a Part I have one first electrically and a Part II have one second electrical; One first electrode, comprise one first electronic pads and a reflective stacks comprise a first metal layer and one second metal level repeatedly overlapping and be electrically conducted the Part I of first surface, the reflectivity that reflective stacks has a relative light is greater than 95%, wherein the thermal stability of the first metal layer is higher than the second metal level, and the second metal level for the reflectivity of light higher than the first metal layer; One second electrode, comprises one second electronic pads and an ohmic contact layer is formed on the Part II of first surface; And one carrier comprise one first connection pad and be electrically connected on the first electrode and one second connection pad is electrically connected on the second electronic pads.
Accompanying drawing explanation
Figure 1A to Fig. 1 E is the schematic diagram of light-emitting device of the present invention according to the manufacture method of one first embodiment;
Fig. 1 F is the schematic diagram of the reflective stacks in first embodiment of the invention;
Fig. 2 is the schematic diagram of a light-emitting device of second embodiment of the invention.
Symbol description
100 light-emitting devices
101 growth substrate
102 first semiconductor layers
104 luminescent layers
106 second semiconductor layers
108 luminous laminations
108a first surface
108b second surface
110 current barrier layers
112 first electrodes
112a the first metal layer
112b second metal level
114 barrier layers
114a first barrier layer
114b second barrier layer
116 conductive binding layer
118 electrically-conductive backing plates
L light
120 second electrodes
200 light-emitting devices
202 transparency carriers
203 insulating barriers
204 first semiconductor layers
206 luminescent layers
208 second semiconductor layers
210 luminous laminations
210a first surface
210b Part I
210c Part II
210d second surface
214a the first metal layer
214b second metal level
216 barrier layers
218 carriers
220 second connection pads
222 first connection pads
224 second electronic padses
226 first electronic padses
228 first conductive channels
230 second conductive channels
231 ohmic contact layers
L
1light
Embodiment
Refer to Figure 1A to Fig. 1 E, display method for producing light-emitting device according to a first embodiment of the present invention.
As shown in Figure 1A, sequentially epitaxial growth one resilient coating 103 and a luminous lamination 108 in a growth substrate 101.It is such as sapphire that growth substrate 101 can be transparency carrier, or electrically-conductive backing plate is such as carborundum.Resilient coating 103 can comprise the aluminium nitride of an involuntary doping, aluminum gallium nitride or gallium nitride, and luminous lamination 108 can comprise gallium nitride, and resilient coating 103 can reduce the defect produced because lattice does not mate between growth substrate 101 with luminous lamination 108.Luminous lamination 108 can comprise one first semiconductor layer 102, luminescent layer 104 and one second semiconductor layer 106.First semiconductor layer 102 and the second semiconductor layer 106 can be such as coating layer (cladding layer) or limiting layer (confinement layer), can provide electronics, hole respectively, make electronics, hole combines with luminescence in luminescent layer 104.The material of the first semiconductor layer 102, luminescent layer 104, second semiconductor layer 106 can comprise III-V race's semi-conducting material, such as Al
xin
yga
(1-x-y)n, wherein 0≤x, y≤1; (x+y)≤1.According to the material of luminescent layer 104, light emitting host can send blue light between 450 nanometers and 490 nanometers of the green glow of wavelength between 530 nanometers and 570 nanometers, wavelength or the wavelength ultraviolet light between 365 nanometer to 405 nanometers.Described first semiconductor layer 102 can be a n-type semiconductor layer, and the second semiconductor layer 106 can be a p-type semiconductor layer.
As shown in Figure 1B, at a first surface 108a of luminous lamination 108, namely the second semiconductor layer 106 is formed the current barrier layer 110 of a patterning.Current barrier layer 110 can be insulation oxide such as silica or titanium oxide; Also can be silicon nitride.
As shown in Figure 1 C, forming one first electrode 112 on the first surface 108a of luminous lamination 108 covers current barrier layer 110, and the surface then can be capped in first surface 108a and the first electrode 112 cover a barrier layer 114, and it can comprise one first barrier layer 114a and one second barrier layer 114b.Current barrier layer 110 entirety cover by the first electrode 112, the first electrode 112 is recessed in barrier layer 114 on first surface 108a.First electrode 112 can be a reflective stacks, and it comprises repeatedly an overlapping the first metal layer 112a and one second metal level 112b, wherein the thermal stability of the first metal layer 112a is high compared with the second metal level 112b, and the reflectivity of the second metal level 112b comparatively the first metal layer 112a is high, such as the first metal layer 112a can be aluminium, second metal level 112b can be silver, can coordinate simultaneously and consult Fig. 1 F, the first metal layer 112a and one second metal level 112b can repeatedly overlapping 2 ~ 12 times.In the present embodiment, the first electrode 112 has a first metal layer 112a and is directly contacted with first surface 108a.The material of barrier layer 114 can comprise titanium, tungsten, platinum, the alloy of nickel or lamination.The thickness of the first metal layer 112a can be between 1 ~ 10A, the thickness of the second metal level 112b can be between 100 ~ 700A, especially, the thickness of the first metal layer 112a can be approximately 3A, and the gross thickness of the first electrode 112 is about between 1400A to 1500A or more than 1500A.For making the first electrode 112 ohmic contact in the second semiconductor layer 106 of luminous lamination 108, can carry out being mainly one of the second metal level 112b and the second semiconductor layer 106 high annealing at a temperature 500 degree (DEG C) and the condition continuing 40 minutes after the first electrode 112 is formed, such as the first metal layer 112b is silver, when second semiconductor layer 106 is p-type GaN, carry out the high annealing of a silver medal and p-type GaN, and the first metal layer 112a can make the second metal level 112b in high-temperature annealing process, keep stable.The first metal layer 112a, except can be fine aluminium, also can comprise aluminium, titanium, tungsten, platinum, the alloy of nickel or lamination, to promote the stability of the first electrode 112.
Refer to Fig. 1 D, an electrically-conductive backing plate 118 is engaged in luminous lamination 108 by a conductive binding layer 116, conductive binding layer 116, between electrically-conductive backing plate 118 and barrier layer 114, can comprise metal or its alloys such as gold, indium, nickel.Now luminous lamination 108 comprises the first semiconductor layer 102, luminescent layer 104, second semiconductor layer 106 between growth substrate 101 and electrically-conductive backing plate 118.A laser (not shown) can be utilized to decompose resilient coating 103 to remove growth substrate 101, and remaining resilient coating 103 available dry ecthing collocation wet etching mode is removed.
Refer to Fig. 1 E, after the manufacture craft that Fig. 1 D removes resilient coating 103, luminous lamination 108 can expose a second surface 108b.Second surface 108b as a main exiting surface and be also the first semiconductor layer 102 one surface, second surface 108b can be a coarse surface to increase light extraction efficiency.One second electrode 120 can be formed at second surface 108b and the position on corresponding current barrier layer 110.When one drives current through the second electrode 120 and electrically-conductive backing plate 118 injects luminous lamination 108, luminescent layer 104 to emit beam because of the combination of electron hole L, and light L can be reflected by the first electrode 112 and be penetrated by second surface 108b.In the present embodiment, when the wavelength of light L is between 365 nanometer ~ 550 nanometer, the first electrode 112 can have the reflectivity being greater than 95%, even can have the reflectivity to 98% to 100%.The first electrode 112 that the present embodiment is formed by the second metal level 112b of the high the first metal layer 112a of thermal stability and high reflectance can improve in prior art with the phenomenon that high-reflectivity metal (such as silver) obviously reduces with semiconductor layer high annealing back reflection rate, and such phenomenon is because the metal such as silver of high reflectance is unstable after the high-temperature anneal, and when the luminous lamination of prior art receive be greater than the high electric current of 350mA time, high-reflectivity metal can be more unstable and reduce reflectivity further.In the present embodiment, the first metal layer 112a has the high reflectance close to the second metal level 112b and also has good ohmic to contact with between the second semiconductor layer 106, and the first metal layer 112a compares the second metal level 112b has higher thermal stability, therefore the first metal layer 112a can make the second metal level 112b with the second semiconductor layer 106 high annealing in keep stable and be unlikely to produce after the high-temperature anneal the phenomenon that reflectivity significantly decays.In addition, in reality test, even if input the electric current a little more than 350mA to luminous lamination 108, the reflectivity of the first electrode 112 is also without the phenomenon obviously declined.
Refer to Fig. 2, a light-emitting device of display second embodiment of the invention.Light-emitting device 200 comprises: a luminous lamination 210 comprises a first surface 210a and the relative first surface 210a of a second surface 210d, and luminous lamination 210 sends a light L
1there is the wavelength being same as light L in the first embodiment, and first surface 210a comprise a Part I 210b have one first electrically and a Part II 210c have one second electrical; One first electrode 217, comprises one first electronic pads 226 and the reflective stacks that repeatedly alternately formed by a first metal layer 214a and one second metal level 214b is electrically conducted the Part I 210b of first surface 210a, and has a relative light L
1reflectivity be greater than 95%, make light L
1penetrate in luminous lamination by second surface 210d; One second electrode 250, comprises one second electronic pads 224 and an ohmic contact layer 231 is formed on the Part II 210c of first surface 210a; And one carrier 218 comprise one first connection pad 222 and be electrically connected on the first electrode 217 and one second connection pad 220 is electrically connected on the second electronic pads 224.Luminous lamination 210 can comprise one first semiconductor layer 204 both sides and be respectively the Part I 210b that the Part II 210c of first surface 210a and second surface 210d, a luminescent layer 206 and one second semiconductor layer 208 have first surface 210a.The Part II 210c of first surface 210a be remove part the second semiconductor layer 208 and luminescent layer 206 formed.One insulating barrier 203 is formed on the first surface 210a of luminous lamination 210, and forms groove by etching process, can insert metal and form conductive channel in subsequent manufacturing processes.First electrode 217 also can comprise a barrier layer 216 and cover reflective stacks that the first metal layer 214a and the second metal level 214b formed and one first conductive channel 228 penetrates insulating barrier 203 and two ends are connected to barrier layer 216 and the first electronic pads 226.The material of the first metal layer 214a and the second metal level 214b can be identical with the first embodiment.The first metal layer 214a directly can be contacted with the second semiconductor layer 208, and in the present embodiment, the first metal layer 214a and the second metal level 214b can repeatedly overlapping 2 ~ 12 times, can promote further for light L
1reflectivity to 95% more than, even between 98% to 100%.In other embodiments, a metal oxide layer (not shown) can be formed between the first electrode 217 and the second semiconductor layer 208 to promote CURRENT DISTRIBUTION.Second electrode 250 separately can have one second conductive channel 230, and its two ends connect ohmic contact layer 231 and the second electronic pads 224 respectively.One transparency carrier 202 can be formed on the second surface 210d of luminous lamination 210, transparency carrier 202 can be the growth substrate of the luminous lamination 210 of epitaxial growth, it is such as sapphire substrate, but in other embodiments, transparency carrier 202 also can be removed, and second surface 210d can be formed as coarse surface via etching process as in the first embodiment.First electronic pads 226, second electronic pads 224, first conductive channel 228 and the second conductive channel 230 can comprise the lamination that the metals such as nickel, gold and/or titanium form.The ohmic contact layer 231 of the first electrode 250 can comprise the lamination that the metals such as chromium, platinum and/or gold form.The area of the first electronic pads 226 and the second electronic pads 224 can be greater than the sectional area of the first conductive channel 228 and the second conductive channel 230 respectively and extend on the surface of insulating barrier 203 and be beneficial to receive high electric current from carrier 218.
Although disclose the present invention, but the scope that it is not intended to limiting the invention, enforcement order or the material used and process for making.The various modification that the present invention is done and change, not de-spirit of the present invention and scope.
Claims (10)
1. a light-emitting device, comprises:
Luminous lamination, comprises first surface and second surface this first surface relatively, and this luminous lamination sends a light and has wavelength between 365 nanometers and 550 nanometers; And
First electrode, to be formed on this first surface and to comprise the first metal layer and the second metal level is repeatedly overlapping, the reflectivity that wherein this first electrode has a relatively above-mentioned light is greater than 95%, and the thermal stability of this first metal layer is higher than this second metal level, and this second metal level for the reflectivity of above-mentioned light higher than this first metal layer.
2. light-emitting device as claimed in claim 1, wherein this first metal layer is directly contacted with this first surface.
3. light-emitting device as claimed in claim 1, also comprises: barrier layer covers this first electrode on this first surface; Electrically-conductive backing plate; Conductive binding layer, is formed between this electrically-conductive backing plate and this barrier layer; Second electrode, has figure, is formed on this second surface; And current barrier layer, to the position of the second electrode being formed at this first surface, wherein this luminous lamination comprises the first semiconductor layer, there is this second surface, the second semiconductor layer has this first surface, luminescent layer is between this first semiconductor layer and this second semiconductor layer, and this first electrode is formed at the local of this first surface, and above-mentioned light is penetrated in this luminous lamination by this second surface.
4. a light-emitting device, comprises:
Luminous lamination, comprise first surface and second surface this first surface relatively, this luminous lamination sends a light and has wavelength between 365 nanometers and 550 nanometers, and this first surface comprises Part I, have first electrically and Part II have second electrical;
First electrode, comprise the first electronic pads and reflective stacks comprise the first metal layer and the second metal level repeatedly overlapping and be electrically conducted this Part I of this first surface, the reflectivity that this reflective stacks has a relatively above-mentioned light is greater than 95%, wherein the thermal stability of this first metal layer is higher than this second metal level, and this second metal level for the reflectivity of above-mentioned light higher than this first metal layer;
Second electrode, comprises the second electronic pads and ohmic contact layer is formed on this Part II of this first surface; And
Carrier, comprises the first connection pad, is electrically connected on this first electrode and one second connection pad is electrically connected on this second electronic pads.
5. the light-emitting device as described in claim 1 or 4, wherein this first metal layer and this second metal level overlapping 2 ~ 12 times repeatedly.
6. the light-emitting device as described in claim 1 or 4, wherein this first metal layer comprises aluminium, and this second metal level is silver, or this first metal layer comprises aluminium, titanium, tungsten, platinum, the alloy of nickel or lamination.
7. the light-emitting device as described in claim 1 or 4, wherein this first metal layer has a thickness, and between 1 ~ 10A, this second metal level has a thickness, between 100A to 700A.
8. light-emitting device as claimed in claim 7, wherein this thickness of this first metal layer is approximately 3A.
9. light-emitting device as claimed in claim 4, also comprise insulating barrier, cover this first surface, this first electronic pads and this second electronic pads are formed between a surface of this insulating barrier and this carrier, wherein this first electrode also comprises: barrier layer, covers between this Part I of this first surface and this insulating barrier; And first conductive channel, penetrate this insulating barrier to connect this first electronic pads and this barrier layer, this second electrode also comprises the second conductive channel, penetrate this insulating barrier to connect this second electronic pads and this ohmic contact layer, wherein this luminous lamination comprises: the first semiconductor layer, has this Part II and this second surface of this first surface; Second semiconductor layer, has this Part I of this first surface; And luminescent layer, be formed between this first semiconductor layer and this second semiconductor layer, and above-mentioned light is penetrated in this luminous lamination by this second surface.
10. the light-emitting device as described in claim 1 or 4, wherein the reflectivity of the relatively above-mentioned light of lamination that formed of this first metal layer and this second metal level is between 98% to 100%.
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|---|---|---|---|
| CN201410153276.3A CN105006506A (en) | 2014-04-16 | 2014-04-16 | Luminescence apparatus |
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| CN201410153276.3A CN105006506A (en) | 2014-04-16 | 2014-04-16 | Luminescence apparatus |
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| CN103426990A (en) * | 2012-05-17 | 2013-12-04 | 晶元光电股份有限公司 | Light emitting device with reflective electrode |
| CN103715315A (en) * | 2013-11-29 | 2014-04-09 | 南京大学扬州光电研究院 | Metal reflector electrode high-voltage LED chip preparation method |
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Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1601773A (en) * | 2004-10-18 | 2005-03-30 | 国联光电科技股份有限公司 | Semiconductor light-emitting component |
| CN1622353A (en) * | 2004-12-17 | 2005-06-01 | 北京工业大学 | Low contact resistance low light absorption and full angle high reflectance LED electrode |
| CN1645637A (en) * | 2005-03-03 | 2005-07-27 | 乐清市亿昊科技发展有限公司 | Light emitting diode chip and production thereof |
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Application publication date: 20151028 |