CN105006253A - Method and system for detecting data retention of flash memory - Google Patents
Method and system for detecting data retention of flash memory Download PDFInfo
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Abstract
The invention provides a method and a system for detecting data retention of a flash memory. The method comprises the following steps: marking bad sectors detected for the first time can be marked; comparing the total quantity of bad sectors detected for the second time with the total quantity of the marked bad sectors and the total quantity of the bad sectors detected for the first time, so that whether the flash memory passes the data retention detection or not can be quickly judged, and the trouble that in the prior art, the addresses of the bad sectors detected twice need to be compared one by one can be avoided. Therefore, the method provided by the invention is relatively simple, quick and effective, and can be applied to multi-sector repairing and read-write management for the flash memory.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of flash memory chip data retention inspection method and system.
Background technology
At present, along with the development of electronic technology, embedded system is more and more in electronic product widespread uses such as control class, consumer, communication classes, and embedded technology is also more and more combined closely with the life of people.Flush memory device (Flash Memory) is a kind of non-volatile solid state memory, and it is complete nonvolatile memory, can provide reliable data cut-off protection; And it can write online, access speed is fast, and be a kind of high reliability, highdensity solid storage device, current, various Flash becomes topmost memory device in embedded system gradually.Meanwhile, flush memory device also has its inherent limitations.First, the flash cell of having programmed has to pass through erasing and just can again programme, and flash cell only has limited serviceable life; That is, flash cell can only carry out the erase operation of limited number of times before failure.Such as, the typical maximum erasing times of nand flash memory cell is 1,000,000 times.Correspondingly, due to the feature of " before write erasing ", flash memory access speed is comparatively slow, and erase operation repeatedly will defective flash memory unit.Therefore, guaranteeing that data can keep its reliability (i.e. data retention, Data Retention) in access procedure, is the considerable ring of current memory storage dealer.Its topmost consideration is data in the process of access, likely because flush memory device itself or external factor causes the integrality of data influenced.
In order to reduce the probability likely occurring data retention fault as far as possible, the memory cell array of current flush memory device is generally made up of typical basic structure, namely be divided into " sector (Sector) " or " page (page) ", and be made up of " block (block) " " sector " or " page ".The data segment that sector includes X byte adds the dead section (Spare) of Y byte, usually, a sector forms a data segment by 512 bytes (little block format) or 2048 bytes (large block format), a dead section is formed, for depositing bug patch code (Error Correction Code by 16 bytes or 64 bytes; ECC) coding, ECC coding makes flush memory device not only have the function of debug, and the data information of energy mis repair.Part multilevel-cell (Multi-Level-Cell, MLC) flash memory include 2048 bytes and the dead section more than 64 bytes, a sector also may have 4096 bytes (or more) data byte.A block is made up of one group of sector, such as: 4,16,32,64 or more sectors, number of sectors is determined as the case may be.If wherein certain sector comprise one or more invalid storage unit (that is, programming or erase operation process in, one or more storage unit cannot realize set minimum operation state), then think that this is " bad " sector.
Embedded flash memory device is the storer that embedded chip carries (embedded).Often with embedded flash memory in the embedded chips such as such as identification card chip (SIM card chip), singlechip chip (MCU chip) or system-on-a-chip (SOC).Embedded chip is after having manufactured, need to check its data retention property before dispatching from the factory, if whole storage unit of a block all function are intact and have enough fiduciary levels, then think that this is " good " block, repair without the need to carrying out sector in block, otherwise this block is bad block, need to utilize the ECC of each bad sector to encode and data restore is carried out to this bad sector, with the reliability and stability of improving product.
The data retention of conventional embedded flash memory chip checks that (data retention check, DR check) method general process is as follows:
Write data: in units of block, scan, write data in each storage block, and carry out high-temperature pressurizing baking to flash memory module to each storage block of embedded flash memory chip, to simulate the situation of flush memory device after using after a while;
First time checks (CP1): in units of block, each storage block of embedded flash memory chip is scanned, data in each storage block of first reading, and the data read in each piece and the data write before are compared, find out the bad sector in each piece;
Second time checks (CP2): in units of block, each block of embedded flash memory chip is scanned, again read the data in each block, the data of the data again read and said write are compared, find out the bad sector in each piece, and each bad sector found out each piece in CP2 and each bad sector of finding out in CP1 carry out address, and comparison is (as shown in Figure 1 one by one, such as by the address comparison one by one of the address of the bad sector Sector 1 ' of CP2 and each bad sector Sector 1 ~ SectorN of CP1, to confirm that whether Sector 1 ' is very for bad sector), do quantity and concrete sevtor address comparison, if the final bad sector address finding that CP1 and CP2 finds out is incomplete same (please refer to Fig. 2 A, this situation is the bad sector address of CP2 and the bad sector address of CP1 is the situation of occuring simultaneously, the bad sector quantity that now CP2 finds out likely is less than, be equal to or greater than CP1), then judge that embedded flash memory chip is not checked by DR, if the quantity of the bad sector that CP1 with CP2 finds out identical with address (please refer to Fig. 2 B), then judge that embedded flash memory chip is checked by DR, the all bad sector found out are all genuine bad sector, follow-uply can to process these bad sector (such as repairing), if find, the bad sector found out of CP2 is included within the scope of bad sector that CP1 finds out (please refer to Fig. 2 C), then judge that embedded flash memory chip is checked by DR, all bad sector that CP2 finds out are all genuine bad sector, follow-uply can to process (such as repairing) to these bad sector and then judge that embedded flash memory chip is not checked by data retention.
In said method, all bad sector found out due to each bad sector that will be found out by CP2 successively and CP1 carry out address comparison, so when bad sector quantity is more than 4, this poll comparison process becomes quite loaded down with trivial details, affects DR checking efficiency.
Summary of the invention
The object of the present invention is to provide a kind of flash memory chip data retention inspection method and system, can simply, quickly and efficiently check flash chip implementation data retention.
For solving the problem, the present invention proposes a kind of flash memory chip data retention inspection method, comprising:
Write data: write data in each storage block of flash chip, data are stored in the sector forming each storage block;
First time checks: the first data read in all storage blocks, and the data of itself and said write is compared, and finds out the bad sector in each storage block, and arranges mark for each bad sector;
Simulate aging: simulate the situation of flash chip after using after a while;
Second time checks: again read the data in each storage block, and by the data comparison again of itself and said write, again find out the bad sector in each storage block, and relatively second time checks and checks the total number of the bad sector found out for the first time and mark total number, when the total number of the bad sector that twice inspection is found out and the total number of mark are all consistent, judge that described flash chip is checked by data retention.
Further, mark is set by writing the data that bad sector and normal sector can be distinguished for each bad sector in bad sector.
Further, the mark of each bad sector is identical, is 1 bit 0; The data of each normal sector are identical, are 1 bit 1.
Further, when relatively second time checks and checks the total number of the bad sector found out with first time and mark total number, comprising:
If the total number of bad sector that twice inspection is found out is equal, but total number of the described mark of twice inspection is inconsistent, then storage block is not checked by data retention;
If the total number of bad sector that twice inspection is found out is equal, and total number of the described mark of twice inspection is consistent, then storage block is checked by data retention;
If the total number of bad sector that twice inspection is found out is inconsistent, then storage block is not checked by data retention.
Further, described simulation Aging Step is realized by carrying out high-temperature pressurizing baking to flash chip.
Further, memory built in self test of sram mode is adopted to realize.
Further, after flash chip is checked by data retention, export the address or generation bad block table that check all bad sector found out for the first time, to carry out sector reparation and read-write management to flash chip.
The present invention also provides a kind of flash memory chip data retention check system, comprises Data write. module, the first checking module, simulation ageing module, the second checking module, wherein,
Described Data write. module, connects the flash chip carrying out the inspection of data retention, and writes data in each storage block of connection flash chip, and the described data of write are stored in the sector forming each storage block;
Described first checking module connection data writing module and described flash chip, and first time inspection is carried out to flash chip, comprise the first reading unit connected successively, first comparing unit, bad sector indexing unit and the first statistic unit, first reading unit reads the data in each storage block of flash chip after Data write. module has write, the data that first reading unit reads by the first comparing unit and the data that Data write. module writes compare, find out the bad sector that data are inconsistent, bad sector indexing unit is that each bad sector that the first comparing unit is found out arranges mark, first statistic unit adds up the total number of bad sector that the first comparing unit finds out and the total number of mark that bad sector indexing unit is arranged,
Described simulation ageing module connects the first checking module and described flash chip, after the first checking module processes described flash chip, simulates the situation of described flash chip after using after a while;
Described second checking module connection data writing module, first checking module, simulation ageing module and described flash chip, and second time inspection is carried out to flash chip, comprise the second reading unit connected successively, second comparing unit, second statistic unit and result judging unit, second reading unit reads the data in each storage block of flash chip after simulation ageing module simulated operation completes, the data that second reading unit reads by the second comparing unit and the data that Data write. module writes compare, find out the mark in the inconsistent bad sector of data and bad sector, second statistic unit is added up the total number of bad sector that the second comparing unit finds out and is marked total number, result judging unit is by the total number of bad sector of the second statistic unit and the first statistic unit statistics and mark total number and compare, judge whether described flash chip is checked by data retention.
Further, described Data write. module writes 1 bit 1 in each sector, and described bad sector indexing unit is that the mark that each bad sector is arranged is identical, is 1 bit 0.
Further, described result judging unit, after the described flash chip of judgement is checked by data retention, exports the address of all bad sector that described first checking module is found out or produces bad block table.
Compared with prior art, flash memory chip data retention inspection method of the present invention and system, the bad sector that first time checks out is marked, and the second time bad sector total quantity that checks out and the mark total quantity that wherein also has are compared with the bad sector total quantity checked for the first time, thus flash chip can be determined fast whether checked by data retention, avoid the trouble of the comparison one by one of twice inspection bad sector address out in prior art, thus flash memory chip data retention inspection method of the present invention and system, relatively simple, fast, effectively, the many sectors being applicable to flash chip are repaired and read-write management.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of CP1 and CP2 results contrast when flash memory chip data retention checks in prior art;
Fig. 2 A to 2C is judgment basis schematic diagram when whether flash chip is checked by data retention in prior art;
Fig. 3 is the process flow diagram of the flash memory chip data retention inspection method of the specific embodiment of the invention;
Fig. 4 A to 4B is the basis for estimation the schematic diagram whether flash chip of the specific embodiment of the invention is checked by data retention
Fig. 5 is the flash memory chip data retention check system block diagram of the specific embodiment of the invention.
Embodiment
For making object of the present invention, feature becomes apparent, and be further described, but the present invention can realize by different forms, should just not be confined to described embodiment below in conjunction with accompanying drawing to the specific embodiment of the present invention.
Flash memory chip data retention inspection method of the present invention and system, the bad sector that first time checks out is marked, and the second time bad sector total quantity that checks out and the mark total quantity that wherein also has are compared with the bad sector total quantity checked for the first time, thus flash chip can be determined fast whether checked by data retention.Technical scheme of the present invention can pass through the test of memory built in self test of sram technology (Memory Built-in Self Test, MBIST) teaching display stand, thus reduces the demand to ATE (automatic test equipment).Therefore flash memory chip data retention inspection method of the present invention as shown in Figure 3, when checking for twice, built-in self-test system reads the whole storage array of flash chip automatically, and exporting each sector passes through/not by the information of (pass/fail) DR inspection, add up the total number of bad sector found out when first time checks simultaneously and each bad sector is marked, add up total number of bad sector when second time checks and mark total number, realize total number of the bad sector of twice check result and mark total number and compare, judge whether flash chip is checked by DR thus.
Below in conjunction with Fig. 3 and Fig. 4 A to 4B, the flash memory chip data retention inspection method of built-in self-test mode of the present invention is described in detail.
Please refer to Fig. 3, the present invention proposes a kind of flash memory chip data retention inspection method, comprising:
S31, write data: in units of block, write data in each storage block of flash chip, data are stored in the sector forming each storage block;
S32, first time checks (CP1): the first data read in each storage block, and the data of itself and said write is compared, and finds out bad sector all in flash chip, and arranges mark for each bad sector;
S33, simulates aging: carry out high-temperature pressurizing baking to flash chip, simulates the situation (such as simulate state that flash chip arrive its serviceable life of 10%) of flash chip after using after a while;
S34, second time checks (CP2): again read the data in each storage block, and by the data comparison again of itself and said write, again find out the bad sector in each storage block in flash chip, namely bad sector all in flash chip is found out, and compare the total number of bad sector and the total number of mark that CP1 and CP2 twice inspection find out, when the total number of the bad sector that twice inspection is found out and the total number of mark are all consistent, judge that described flash chip is checked by data retention, follow-uply can carry out sector reparation according to the result of data retention inspection to described flash chip.
The flash memory chip data retention inspection method of the present embodiment, in fact in step S31 in units of block, according to put in order (i.e. the sequence of addresses) of storage block, each storage block to flash chip writes data successively, thus data are write in all sectors of flash chip, in step S32 and S34 in units of block, according to put in order (i.e. the sequence of addresses) of storage block, read the data in each storage block of flash chip successively, thus read the data of all sectors of flash chip, and the comparison of reading data and write data is carried out one by one to each sector, find out all bad sector (sector that the data namely writing and read are inconsistent), such as, to each storage block write 1 in the write data step of S31, (the sector that namely data retention is good, normal sector, good sector) by storage 1 bit 1, the data of data write error in bad sector (namely causing the sector of inefficacy mainly due to manufacturing process defect) (such as becoming 0) or bad sector are by mistake follow-up can not be read, now step S32 checks in step, first with block unit, have read the data in all sectors, then the data by being read each sector compare with the data of each sector write, can find that the data of sector can be verified as correctly, the data of bad sector can be verified as mistake, the data even read from certain sector are inconsistent with the data writing this sector before, then judge that this sector is as bad sector, and in step s 32, first time checks which kind of situation is the storage data of the bad sector no matter read be, each bad sector is carried out same tag by unification, namely in bad sector, write the data of 1 bit 0, sector now in flash chip only has two class data, the sector that data are not 1 will be found out, after the simulation Aging Step of S33, some normal sectors likely arrive its serviceable life and lost efficacy and become bad sector, check that the CP1 that the bad sector quantity found out in step may be equal to or greater than step S32 checks the bad sector quantity found out in step at the CP2 of S34.The difference of the total number of bad sector therefore utilizing step S32 and step S34 twice inspection to find out and the total number of mark, can judge whether described flash chip is checked by data retention fast, particularly:
If the total number of bad sector that twice inspection is found out is equal, but total number of the described mark of twice inspection is inconsistent, then flash chip does not check (not shown) by data retention;
If the total number of bad sector that twice inspection is found out is equal, and total number of the described mark of twice inspection is equal, then flash chip checks (please refer to Fig. 4 A) by data retention;
If the total number of bad sector that twice inspection is found out is inconsistent, then flash chip does not check (please refer to Fig. 4 B) by data retention.
After judgement flash chip is checked by DR, built-in self-test system can export the address of all bad sector or produce bad block table, to carry out sector reparation and read-write management to flash chip.
The flash chip DR inspection method of the present embodiment, first time checks and all bad sector lost efficacy mainly due to manufacturing process defect in flash chip is marked, second time inspection can only rely on the total quantity of bad sector and the total quantity of mark to verify the result that first time checks, judge that whether flash chip is by the inspection of data retention fast, avoid in prior art utilize the sevtor address of twice check result one by one comparison carry out the loaded down with trivial details logic verified, therefore calculated amount reduces greatly, relatively speed improves greatly, the test duration of flash chip can be saved.
Please refer to Fig. 5, the present invention also provides a kind of flash memory chip data retention check system based on built-in self-test formula mode, comprise Data write. module 51, first checking module 52, simulation ageing module 53, second checking module 54, Data write. module 51, first checking module 52 and the second checking module 54 can embed in the memory test machine for flash chip functional test and realize, simulation ageing module 53 can comprise well heater, the isostructural aging test device for memory realization of refrigeratory based on existing, wherein
Described Data write. module 51, connects the flash chip 10 carrying out the inspection of data retention, and writes data in each storage block of connection flash chip 10, and the described data of write are stored in the sector forming each storage block;
Described first checking module 52 connection data writing module 51 and described flash chip 10, comprise the first reading unit 521 connected successively, first comparing unit 522, bad sector indexing unit 523 and the first statistic unit 524, the data of the first reading unit 521 after Data write. module 51 has write in first each storage block reading flash chip 10, the data that first reading unit 521 reads by the first comparing unit 522 and the data that Data write. module 51 writes compare, find out the bad sector that data are inconsistent, bad sector indexing unit 523 is that each bad sector that the first comparing unit 522 is found out arranges mark, first statistic unit 524 adds up the total number of bad sector that the first comparing unit 522 finds out and the total number of mark that bad sector indexing unit 523 is arranged,
Described simulation ageing module 53 connects the first checking module 52 and described flash chip 10, after the first checking module 52 processes described flash chip, flash chip 10 is placed in high-temperature pressurizing curing environment, simulates the situation of described flash chip after using after a while;
Described second checking module 54 connection data writing module 51, first checking module 52, simulation ageing module 53 and described flash chip 10, comprise the second reading unit 541 connected successively, second comparing unit 542, second statistic unit 543 and result judging unit 544, second reading unit 541 again reads the data in each storage block of flash chip 10 after simulation ageing module 53 simulated operation completes, the data that second reading unit 541 reads by the second comparing unit 542 and the data that Data write. module 51 writes compare, find out the mark in the inconsistent bad sector of data and bad sector, second statistic unit 543 is added up the total number of bad sector that the second comparing unit 542 finds out and is marked total number, the total number of bad sector that second statistic unit 543 and the first statistic unit 524 are added up by result judging unit 544 and mark total number and compare, judge whether described flash chip is checked by data retention.
Wherein, described Data write. module 51, in units of block, according to the storage block arrangement/sequence of addresses of flash chip 10, writes 1 bit 1 in each sector, and described bad sector indexing unit is that the mark that each bad sector is arranged is identical, is 1 bit 0; First reading unit 521 and the second reading unit 541, in units of block, according to the storage block arrangement/sequence of addresses of flash chip 10, reads to the data in each sector successively; First comparing unit 522 and the second comparing unit 542 can carry out data and compare in units of block, also in units of whole flash chip, after reading obtains the overall data of the storage array of flash chip, can carry out the comparison of whole storage array data.
Further, described result judging unit 544, after the described flash chip 10 of judgement is checked by data retention, exports the address of all bad sector that described first checking module 52 is found out or produces bad block table.
Flash memory chip data retention check system of the present invention, can realize based on memory built in self test of sram mode, first checking module carries out first time inspection to flash chip, the all bad sector lost efficacy mainly due to manufacturing process defect in flash chip are automatically found out and are marked, second checking module carries out second time inspection, and can only rely on the total quantity of the bad sector found out and the total quantity of mark to carry out automatic Verification to the result that first time checks, judge that whether flash chip is by the inspection of data retention fast, avoid in prior art utilize the sevtor address of twice check result one by one comparison carry out the loaded down with trivial details logic verified, therefore calculated amount reduces greatly, relatively speed improves greatly, the test duration of flash chip can be saved.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. a flash memory chip data retention inspection method, is characterized in that, comprising:
Write data: write data in each storage block of flash chip, data are stored in the sector forming each storage block;
First time checks: the first data read in all storage blocks, and the data of itself and said write is compared, and finds out the bad sector in each storage block, and arranges mark for each bad sector;
Simulate aging: simulate the situation of flash chip after using after a while;
Second time checks: again read the data in each storage block, and by the data comparison again of itself and said write, again find out the bad sector in each storage block, and relatively second time checks and checks the total number of the bad sector found out for the first time and mark total number, when the total number of the bad sector that twice inspection is found out and the total number of mark are all consistent, judge that described flash chip is checked by data retention.
2. flash memory chip data retention inspection method as claimed in claim 1, is characterized in that, arranges mark by writing the data that bad sector and normal sector can be distinguished for each bad sector in bad sector.
3. flash memory chip data retention inspection method as claimed in claim 2, it is characterized in that, the mark of each bad sector is identical, is 1 bit 0; The data of each normal sector are identical, are 1 bit 1.
4. flash memory chip data retention inspection method as claimed in claim 1, is characterized in that, when relatively second time checks and checks the total number of the bad sector found out with first time and mark total number, comprising:
If the total number of bad sector that twice inspection is found out is equal, but total number of the described mark of twice inspection is inconsistent, then storage block is not checked by data retention;
If the total number of bad sector that twice inspection is found out is equal, and total number of the described mark of twice inspection is consistent, then storage block is checked by data retention;
If the total number of bad sector that twice inspection is found out is inconsistent, then storage block is not checked by data retention.
5. flash memory chip data retention inspection method as claimed in claim 1, is characterized in that, realizes described simulation Aging Step by carrying out high-temperature pressurizing baking to flash chip.
6. flash memory chip data retention inspection method as claimed in claim 1, is characterized in that, adopts memory built in self test of sram mode to realize.
7. flash memory chip data retention inspection method as claimed in claim 6, it is characterized in that, after flash chip is checked by data retention, export the address or generation bad block table that check all bad sector found out for the first time, to carry out sector reparation and read-write management to flash chip.
8. a flash memory chip data retention check system, is characterized in that, comprises Data write. module, the first checking module, simulation ageing module, the second checking module, wherein,
Described Data write. module, connects the flash chip carrying out the inspection of data retention, and writes data in each storage block of connection flash chip, and the described data of write are stored in the sector forming each storage block;
Described first checking module connection data writing module and described flash chip, and first time inspection is carried out to flash chip, comprise the first reading unit connected successively, first comparing unit, bad sector indexing unit and the first statistic unit, first reading unit reads the data in each storage block of flash chip after Data write. module has write, the data that first reading unit reads by the first comparing unit and the data that Data write. module writes compare, find out the bad sector that data are inconsistent, bad sector indexing unit is that each bad sector that the first comparing unit is found out arranges mark, first statistic unit adds up the total number of bad sector that the first comparing unit finds out and the total number of mark that bad sector indexing unit is arranged,
Described simulation ageing module connects the first checking module and described flash chip, after the first checking module processes described flash chip, simulates the situation of described flash chip after using after a while;
Described second checking module connection data writing module, first checking module, simulation ageing module and described flash chip, and second time inspection is carried out to flash chip, comprise the second reading unit connected successively, second comparing unit, second statistic unit and result judging unit, second reading unit reads the data in each storage block of flash chip after simulation ageing module simulated operation completes, the data that second reading unit reads by the second comparing unit and the data that Data write. module writes compare, find out the mark in the inconsistent bad sector of data and bad sector, second statistic unit is added up the total number of bad sector that the second comparing unit finds out and is marked total number, result judging unit is by the total number of bad sector of the second statistic unit and the first statistic unit statistics and mark total number and compare, judge whether described flash chip is checked by data retention.
9. flash memory chip data retention check system as claimed in claim 1, it is characterized in that, described Data write. module writes 1 bit 1 in each sector, and described bad sector indexing unit is that the mark that each bad sector is arranged is identical, is 1 bit 0.
10. flash memory chip data retention check system as claimed in claim 1, it is characterized in that, described result judging unit, after the described flash chip of judgement is checked by data retention, exports the address of all bad sector that described first checking module is found out or produces bad block table.
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