CN105005348B - A kind of beam excitation amplifying type field intensity detection current source - Google Patents
A kind of beam excitation amplifying type field intensity detection current source Download PDFInfo
- Publication number
- CN105005348B CN105005348B CN201510316911.XA CN201510316911A CN105005348B CN 105005348 B CN105005348 B CN 105005348B CN 201510316911 A CN201510316911 A CN 201510316911A CN 105005348 B CN105005348 B CN 105005348B
- Authority
- CN
- China
- Prior art keywords
- resistance
- audion
- power amplifier
- circuit
- pole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005284 excitation Effects 0.000 title claims abstract description 25
- 238000001514 detection method Methods 0.000 title claims abstract description 14
- 230000001143 conditioned effect Effects 0.000 claims abstract description 12
- 230000018199 S phase Effects 0.000 claims abstract description 7
- 239000003990 capacitor Substances 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
Landscapes
- Amplifiers (AREA)
Abstract
The invention discloses a kind of beam excitation amplifying type field intensity detection current source, by DC source S, the control circuit being connected with DC source S-phase, the temperature-compensation circuit being connected with control circuit, the photoconductive resistance CDS being connected with temperature-compensation circuit, the anti-phase conditioned circuit of precision being serially connected between temperature-compensation circuit and photoconductive resistance CDS, and it is serially connected in the beam excitation circuit composition between DC source S and photoconductive resistance CDS; It is characterized in that, between accurate anti-phase conditioned circuit and beam excitation circuit, be also serially connected with amplifying type field intensity testing circuit. LM4431 reference circuits and LMC6062 type power amplifier that National Semiconductor is produced by the present invention combine, and can significantly increase the range of current output of the present invention.
Description
Technical field
The present invention relates to a kind of power supply, specifically refer to a kind of beam excitation amplifying type field intensity detection current source.
Background technology
At present; battery manufacturer is after having made battery protection circuit; be typically necessary whether detect the various functions of this battery protection circuit with bipolar power supply up to standard, namely utilize bipolar power supply quickly realize the overvoltage to battery protection circuit, under-voltage, cross the quickly calibrated of stream and test. When so-called bipolar power supply refers to this corona discharge, the electric current of its power source internal is to flow to positive pole from negative pole, and the electric current of its power source internal is to flow to negative pole (when its internal electric current of traditional common power all can only flow to positive pole from negative pole, and can not flow to negative pole from positive pole) from positive pole during to this power source charges. But, the bipolar power supply sold on the market at present is easily subject to the impact of ambient temperature, and its power supply performance can be made unstable. The negative effect how effectively overcoming ambient temperature to bring, is people's difficult problems of being badly in need of solving.
Summary of the invention
It is an object of the invention to the impact overcoming current bipolar power supply to be easily subject to ambient temperature, and then cause the defect of unstable properties, it is provided that a kind of beam excitation amplifying type field intensity detection current source.
The purpose of the present invention is achieved through the following technical solutions: a kind of beam excitation amplifying type field intensity detection current source, by DC source S, the control circuit being connected with DC source S-phase, the temperature-compensation circuit being connected with control circuit, the photoconductive resistance CDS being connected with temperature-compensation circuit, the anti-phase conditioned circuit of precision being serially connected between temperature-compensation circuit and photoconductive resistance CDS, and it is serially connected in the beam excitation circuit composition between DC source S and photoconductive resistance CDS.Meanwhile, between accurate anti-phase conditioned circuit and beam excitation circuit, amplifying type field intensity testing circuit also it is serially connected with, described amplifying type field intensity testing circuit is by integrated package U1, amplifier P4, positive pole DD foot with integrated package U1 after resistance R21 is connected, negative pole is sequentially through resistance R22, resistance R25, diode D2, the polar capacitor C10 being connected with the COMP foot of integrated package U1 after resistance R23, N pole is connected with the negative input of amplifier P4 after resistance R20, P pole is sequentially through resistance R19, polar capacitor C9, resistance R18, resistance R16, resistance R17, the diode D3 being connected with the electrode input end of amplifier P4 after electric capacity C8, base stage SW foot with integrated package U1 after resistance R27 is connected, its emitter stage is sequentially through resistance R24, resistance R26, it is connected with the outfan of amplifier P4 after resistance R29, the audion Q5 of its grounded collector, and one end is connected with the junction point of resistance R24 with resistance R26, the resistance R28 composition that the other end is connected with the COMP foot of integrated package U1, the SENSE foot of described integrated package U1 is connected with the junction point of polar capacitor C9 with resistance R19, its PWM foot is connected with the positive pole of polar capacitor C10, its ADJ foot is connected with the negative pole of polar capacitor C10, its IN foot is connected and as input, its GND foot ground connection with resistance R18 junction point with resistance R16, the junction point ground connection of described resistance R22 and resistance R25, the junction point of described resistance 24 and resistance R26 is as outfan.
Further, the anti-phase conditioned circuit of described precision is by diode D1, LMC6062 type power amplifier P2, one end is connected with the P pole of diode D1, the resistance R8 that the other end is connected with the electrode input end of LMC6062 type power amplifier P2, one end is connected with temperature-compensation circuit, the potentiometer R9 that the other end is connected with the outfan of LMC6062 type power amplifier P2 after LM4431 reference circuits, and one end is connected with the electrode input end of LMC6062 type power amplifier P2, the resistance R10 composition that the other end is connected with the outfan of LMC6062 type power amplifier P2 after photoconductive resistance CDS, the negative input of described LMC6062 type power amplifier P2 is connected with the control end of potentiometer R9, the N pole of described diode D1 is then connected with the junction point of resistance R9 and LM4431 reference circuits, the junction point of described resistance R10 and photoconductive resistance CDS is connected with the junction point of resistance R24 with resistance R26, and the junction point of described resistance R8 and resistance R10 is connected with the negative pole of DC source S.
Described beam excitation main circuit will by power amplifier P3, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P3, positive pole is the polar capacitor C5 of ground connection after diode D2, one end is connected with the positive pole of polar capacitor C5, the other end is the resistance R11 of ground connection after diode D3, positive pole is connected with the junction point of resistance R11 and diode D3, the polar capacitor C7 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R12 that the other end is connected with the electrode input end of power amplifier P3, it is serially connected in the resistance R13 between negative input and the outfan of power amplifier P3, one end is connected with the outfan of NAND gate IC1, the resistance R14 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the outfan of NAND gate IC2, the electric capacity C6 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C7, the resistance R15 composition that the other end is connected with the negative input of NAND gate IC2,The electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P3, and its outfan is connected with the electrode input end of NAND gate IC2; The electrode input end of NAND gate IC3 is connected with the outfan of power amplifier P3, and its outfan is then connected with the IN foot of integrated package U1; The electrode input end of power amplifier P3 is connected with the negative pole of DC source S.
Described control circuit is by audion Q1, audion Q2, it is serially connected in the resistance R1 between the colelctor electrode of audion Q1 and the colelctor electrode of audion Q2, it is serially connected in the RC filter circuit between the emitter stage of audion Q1 and the negative pole of DC source S, it is serially connected in the resistance R2 between the base stage of audion Q1 and the negative pole of DC source S and the resistance R5 composition in parallel with DC source S-phase; The emitter stage of described audion Q2 is connected with the positive pole of DC source S, and the base stage of audion Q2 is also connected with the colelctor electrode of audion Q1.
Described temperature-compensation circuit is by audion Q3, audion Q4, power amplifier P1, it is serially connected in the resistance R4 between the colelctor electrode of audion Q3 and the colelctor electrode of audion Q2, it is serially connected in the electric capacity C2 between electrode input end and the outfan of power amplifier P1, it is serially connected in the electric capacity C3 between negative input and the outfan of power amplifier P1, negative pole is connected with the emitter stage of audion Q4, the electric capacity C4 that positive pole is connected with the N pole of diode D1, one end is connected with the negative pole of electric capacity C4, the resistance R6 that the other end is connected with the P pole of diode D1, and one end is connected with the outfan of power amplifier P1, the resistance R7 composition that the other end is connected with potentiometer R9, the electrode input end of described power amplifier P1 is connected with the colelctor electrode of audion Q4, and its negative input is connected with the emitter stage of audion Q3, the colelctor electrode of described audion Q4 is connected with the colelctor electrode of audion Q2, its base earth, the base stage of audion Q3 is connected with the positive pole of DC source S.
For guaranteeing result of use, described RC filtered electrical routing resistance R3, and form with the resistance R3 electric capacity C1 being in parallel; Meanwhile, described electric capacity C2, electric capacity C3, electric capacity C4, electric capacity C5 and electric capacity C7 are polar capacitor.
For ease of realizing the present invention, described integrated package U1 preferentially adopts SD42524 integrated package.
The present invention compared with prior art, has the following advantages and beneficial effect:
(1) overall structure of the present invention is simple, and it makes and very easy to use.
(2) present invention can adjust output current value automatically according to the variations in temperature of external environment condition, so that it is guaranteed that its stable performance.
(3) National Semiconductor is produced by the present invention LM4431 reference circuits and LMC6062 type power amplifier are combined together to form accurate anti-phase conditioned circuit, therefore can significantly increase the range of current output of the present invention.
(4) present invention adopt amplifying type field intensity testing circuit can improve the overvoltage to battery protection circuit, under-voltage, cross stream quickly calibrated and test precision.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the structural representation of the amplifying type field intensity testing circuit of the present invention.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
As shown in Figure 1, temp. compensation type power supply of the present invention is by DC source S, the control circuit being connected with DC source S-phase, the temperature-compensation circuit being connected with control circuit, the photoconductive resistance CDS being connected with temperature-compensation circuit, the anti-phase conditioned circuit of precision being serially connected between temperature-compensation circuit and photoconductive resistance CDS, and it is serially connected in the beam excitation circuit composition between DC source S and photoconductive resistance CDS.
Meanwhile, the present invention is serially connected with amplifying type field intensity testing circuit between accurate anti-phase conditioned circuit and beam excitation circuit, and the particular circuit configurations of this amplifying type field intensity testing circuit is as shown in Figure 2, namely it is by integrated package U1, amplifier P4, resistance R16, resistance R17, resistance R18, resistance R19, resistance R20, resistance R21, resistance R22, resistance R23, resistance R24, resistance R25, resistance R26, resistance R27, resistance R28, resistance R29, electric capacity C8, polar capacitor C9, polar capacitor C10, diode D2, diode D3, and audion Q5 composition.
During use, the positive pole of polar capacitor C10 DD foot with integrated package U1 after resistance R21 is connected, its negative pole sequentially after resistance R22, resistance R25, diode D2 and resistance R23 COMP foot with integrated package U1 be connected.
The N pole of described diode D3 is connected with the negative input of amplifier P4 after resistance R20, its P pole then sequentially after resistance R19, polar capacitor C9, resistance R18, resistance R16, resistance R17, electric capacity C8 electrode input end with amplifier P4 be connected.
Meanwhile, the base stage of audion Q5 SW foot with integrated package U1 after resistance R27 be connected, its emitter stage sequentially after resistance R24, resistance R26, resistance R29 outfan with amplifier P4 be connected, its grounded collector. And one end of resistance R28 is connected with the junction point of resistance R24 with resistance R26, the other end is connected with the COMP foot of integrated package U1.
Wherein, this integrated package U1 preferentially adopts model to be that SD42524 integrated circuit realizes, and it has the function such as overcurrent protection, overtemperature prote. The input voltage range of this SD42524 integrated circuit is 6��36V, and current margin is 1.5��2mA, and maximum output current is 1A.
During connection, the SENSE foot of this integrated package U1 is connected with the junction point of polar capacitor C9 with resistance R19, its PWM foot is connected with the positive pole of polar capacitor C10, its ADJ foot is connected with the negative pole of polar capacitor C10, its IN foot is connected and as input, its GND foot ground connection with resistance R18 junction point with resistance R16; The junction point ground connection of described resistance R22 and resistance R25; The junction point of described resistance 24 and resistance R26 is as outfan.
The anti-phase conditioned circuit of described precision is made up of diode D1, LMC6062 type power amplifier P2, resistance R8, potentiometer R9, resistance R10 and LM4431 reference circuits. Wherein, LMC6062 type power amplifier P2 and LM4431 reference circuits are National Semiconductor's production.
During connection, one end of resistance R8 is connected with the P pole of diode D1, its other end is connected with the electrode input end of LMC6062 type power amplifier P2; One end of potentiometer R9 is connected with temperature-compensation circuit, the other end is connected with the outfan of LMC6062 type power amplifier P2 after LM4431 reference circuits; One end of resistance R10 is connected with the electrode input end of LMC6062 type power amplifier P2, the other end is connected with the outfan of LMC6062 type power amplifier P2 after photoconductive resistance CDS.
Simultaneously, the negative input of LMC6062 type power amplifier P2 needs to be connected with the control end of potentiometer R9, the N pole of described diode D1 is then connected with the junction point of resistance R9 and LM4431 reference circuits, to guarantee that potentiometer R9, LM4431 reference circuits and LMC6062 type power amplifier P2 form an electric loop.For guaranteeing operational effect, resistance R10 is connected and ground connection with the junction point of resistance R24 with resistance R26 with the junction point of resistance R10 described in the junction point of photoconductive resistance CDS and photoconductive resistance CDS; The junction point of described resistance R8 and resistance R10 is connected with the negative pole of DC source S, and the electrode input end of LMC6062 type power amplifier P2 also needs to the DC voltage of external 15V.
Described control circuit is made up of audion Q1, audion Q2, resistance R1, resistance R2, resistance R5 and RC filter circuit. During connection, resistance R1 is serially connected between the colelctor electrode of audion Q1 and the colelctor electrode of audion Q2, and RC filter circuit is then serially connected between the emitter stage of audion Q1 and the negative pole of DC source S. Resistance R2 is serially connected between the base stage of audion Q1 and the negative pole of DC source S, and resistance R5 is then in parallel with DC source S-phase.
Meanwhile, the emitter stage of audion Q2 is connected with the positive pole of DC source S, and its base stage is also connected with the colelctor electrode of audion Q1. For guaranteeing operational effect, the resistance of resistance R1, resistance R2, resistance R3 and resistance R5 is 10K ��. RC filtered electrical routing resistance R3 in the application, and form with the resistance R3 electric capacity C1 being in parallel.
Power back-off when temperature-compensation circuit is for ambient temperature change, it is by audion Q3, audion Q4, power amplifier P1, it is serially connected in the resistance R4 between the colelctor electrode of audion Q3 and the colelctor electrode of audion Q2, it is serially connected in the electric capacity C2 between electrode input end and the outfan of power amplifier P1, it is serially connected in the electric capacity C3 between negative input and the outfan of power amplifier P1, negative pole is connected with the emitter stage of audion Q4, the electric capacity C4 that positive pole is connected with the N pole of diode D1, one end is connected with the negative pole of electric capacity C4, the resistance R6 that the other end is then connected with the P pole of diode D1, and one end is connected with the outfan of power amplifier P1, the resistance R7 composition that the other end is connected with potentiometer R9. that is, the input of power amplifier P1 is connected through resistance R7 N pole with diode D1 after potentiometer R9.
The electrode input end of power amplifier P1 is connected with the colelctor electrode of audion Q4, and its negative input is also connected with the emitter stage of audion Q3. And the colelctor electrode of audion Q4 is also connected with the colelctor electrode of audion Q2, and its base earth. For guaranteeing result of use, described electric capacity C2, electric capacity C3 and electric capacity C4 all preferentially adopts polar capacitor to realize.
Described beam excitation circuit is then by power amplifier P3, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P3, positive pole is the polar capacitor C5 of ground connection after diode D2, one end is connected with the positive pole of polar capacitor C5, the other end is the resistance R11 of ground connection after diode D3, positive pole is connected with the junction point of resistance R11 and diode D3, the polar capacitor C7 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R12 that the other end is connected with the electrode input end of power amplifier P3, it is serially connected in the resistance R13 between negative input and the outfan of power amplifier P3, one end is connected with the outfan of NAND gate IC1, the resistance R14 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the outfan of NAND gate IC2, the electric capacity C6 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C7, the resistance R15 composition that the other end is connected with the negative input of NAND gate IC2.
Meanwhile, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P3, and its outfan is connected with the electrode input end of NAND gate IC2; The electrode input end of NAND gate IC3 is connected with the outfan of power amplifier P3, and its outfan is then connected with the IN foot of integrated package U1; The electrode input end of power amplifier P3 is connected with the negative pole of DC source S.
As it has been described above, the present invention just can be realized preferably.
Claims (8)
1. a beam excitation amplifying type field intensity detection current source, by DC source S, the control circuit being connected with DC source S-phase, the temperature-compensation circuit being connected with control circuit, the photoconductive resistance CDS being connected with temperature-compensation circuit, the anti-phase conditioned circuit of precision being serially connected between temperature-compensation circuit and photoconductive resistance CDS, and it is serially connected in the beam excitation circuit composition between DC source S and photoconductive resistance CDS, it is characterized in that, between accurate anti-phase conditioned circuit and beam excitation circuit, be also serially connected with amplifying type field intensity testing circuit, described amplifying type field intensity testing circuit is by integrated package U1, amplifier P4, positive pole DD foot with integrated package U1 after resistance R21 is connected, negative pole is sequentially through resistance R22, resistance R25, diode D2, the polar capacitor C10 being connected with the COMP foot of integrated package U1 after resistance R23, N pole is connected with the negative input of amplifier P4 after resistance R20, P pole is sequentially through resistance R19, polar capacitor C9, resistance R18, resistance R16, resistance R17, the diode D3 being connected with the electrode input end of amplifier P4 after electric capacity C8, base stage SW foot with integrated package U1 after resistance R27 is connected, its emitter stage is sequentially through resistance R24, resistance R26, it is connected with the outfan of amplifier P4 after resistance R29, the audion Q5 of its grounded collector, and one end is connected with the junction point of resistance R24 with resistance R26, the resistance R28 composition that the other end is connected with the COMP foot of integrated package U1, the SENSE foot of described integrated package U1 is connected with the junction point of polar capacitor C9 with resistance R19, its PWM foot is connected with the positive pole of polar capacitor C10, its ADJ foot is connected with the negative pole of polar capacitor C10, its IN foot is connected and as input, its GND foot ground connection with resistance R18 junction point with resistance R16, the junction point ground connection of described resistance R22 and resistance R25, the junction point of described resistance 24 and resistance R26 is as outfan.
2. a kind of beam excitation amplifying type field intensity detection current source according to claim 1, it is characterized in that, the anti-phase conditioned circuit of described precision is by diode D1, LMC6062 type power amplifier P2, one end is connected with the P pole of diode D1, the resistance R8 that the other end is connected with the electrode input end of LMC6062 type power amplifier P2, one end is connected with temperature-compensation circuit, the potentiometer R9 that the other end is connected with the outfan of LMC6062 type power amplifier P2 after LM4431 reference circuits, and one end is connected with the electrode input end of LMC6062 type power amplifier P2, the resistance R10 composition that the other end is connected with the outfan of LMC6062 type power amplifier P2 after photoconductive resistance CDS, the negative input of described LMC6062 type power amplifier P2 is connected with the control end of potentiometer R9, the N pole of described diode D1 is then connected with the junction point of resistance R9 and LM4431 reference circuits, the junction point of described resistance R10 and photoconductive resistance CDS is connected with the junction point of resistance R24 with resistance R26, and the junction point of described resistance R8 and resistance R10 is connected with the negative pole of DC source S.
3. a kind of beam excitation amplifying type field intensity detection current source according to claim 2, it is characterized in that, described beam excitation main circuit will by power amplifier P3, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P3, positive pole is the polar capacitor C5 of ground connection after diode D2, one end is connected with the positive pole of polar capacitor C5, the other end is the resistance R11 of ground connection after diode D3, positive pole is connected with the junction point of resistance R11 and diode D3, the polar capacitor C7 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R12 that the other end is connected with the electrode input end of power amplifier P3, it is serially connected in the resistance R13 between negative input and the outfan of power amplifier P3, one end is connected with the outfan of NAND gate IC1, the resistance R14 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the outfan of NAND gate IC2, the electric capacity C6 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C7, the resistance R15 composition that the other end is connected with the negative input of NAND gate IC2, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P3, and its outfan is connected with the electrode input end of NAND gate IC2, the electrode input end of NAND gate IC3 is connected with the outfan of power amplifier P3, and its outfan is then connected with the IN foot of integrated package U1, the electrode input end of power amplifier P3 is connected with the negative pole of DC source S.
4. a kind of beam excitation amplifying type field intensity detection current source according to claim 3, it is characterized in that, described control circuit is by audion Q1, audion Q2, it is serially connected in the resistance R1 between the colelctor electrode of audion Q1 and the colelctor electrode of audion Q2, it is serially connected in the RC filter circuit between the emitter stage of audion Q1 and the negative pole of DC source S, is serially connected in the resistance R2 between the base stage of audion Q1 and the negative pole of DC source S and the resistance R5 composition in parallel with DC source S-phase; The emitter stage of described audion Q2 is connected with the positive pole of DC source S, and the base stage of audion Q2 is also connected with the colelctor electrode of audion Q1.
5. a kind of beam excitation amplifying type field intensity detection current source according to claim 4, it is characterized in that, described temperature-compensation circuit is by audion Q3, audion Q4, power amplifier P1, it is serially connected in the resistance R4 between the colelctor electrode of audion Q3 and the colelctor electrode of audion Q2, it is serially connected in the electric capacity C2 between electrode input end and the outfan of power amplifier P1, it is serially connected in the electric capacity C3 between negative input and the outfan of power amplifier P1, negative pole is connected with the emitter stage of audion Q4, the electric capacity C4 that positive pole is connected with the N pole of diode D1, one end is connected with the negative pole of electric capacity C4, the resistance R6 that the other end is connected with the P pole of diode D1, and one end is connected with the outfan of power amplifier P1, the resistance R7 composition that the other end is connected with potentiometer R9, the electrode input end of described power amplifier P1 is connected with the colelctor electrode of audion Q4, and its negative input is connected with the emitter stage of audion Q3, the colelctor electrode of described audion Q4 is connected with the colelctor electrode of audion Q2, its base earth, the base stage of audion Q3 is connected with the positive pole of DC source S.
6. a kind of beam excitation amplifying type field intensity detection current source according to claim 5, it is characterised in that described RC filtered electrical routing resistance R3, and form with the resistance R3 electric capacity C1 being in parallel.
7. a kind of beam excitation amplifying type field intensity detection current source according to claim 6, it is characterised in that described electric capacity C2, electric capacity C3, electric capacity C4, electric capacity C5 and electric capacity C7 are polar capacitor.
8. a kind of beam excitation amplifying type field intensity detection current source according to any one of claim 1��7, it is characterised in that described integrated package U1 is SD42524 integrated package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510316911.XA CN105005348B (en) | 2014-11-25 | 2015-06-11 | A kind of beam excitation amplifying type field intensity detection current source |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2014106867299 | 2014-11-25 | ||
| CN201410686729.9A CN104460808A (en) | 2014-11-25 | 2014-11-25 | Light beam excitation type precise reverse-bias adjustable current source |
| CN201510316911.XA CN105005348B (en) | 2014-11-25 | 2015-06-11 | A kind of beam excitation amplifying type field intensity detection current source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105005348A CN105005348A (en) | 2015-10-28 |
| CN105005348B true CN105005348B (en) | 2016-06-08 |
Family
ID=52907025
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410686729.9A Pending CN104460808A (en) | 2014-11-25 | 2014-11-25 | Light beam excitation type precise reverse-bias adjustable current source |
| CN201510316911.XA Expired - Fee Related CN105005348B (en) | 2014-11-25 | 2015-06-11 | A kind of beam excitation amplifying type field intensity detection current source |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410686729.9A Pending CN104460808A (en) | 2014-11-25 | 2014-11-25 | Light beam excitation type precise reverse-bias adjustable current source |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN104460808A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9960740B2 (en) * | 2015-06-18 | 2018-05-01 | Raytheon Company | Bias circuitry for depletion mode amplifiers |
| CN105388811A (en) * | 2015-11-27 | 2016-03-09 | 成都聚汇才科技有限公司 | Intelligent electric meter control system based on operational amplifier-type information transmission circuit |
| CN109752766B (en) * | 2018-12-18 | 2021-05-28 | 中煤科工集团西安研究院有限公司 | Mine induced polarization detection system and fine imaging method |
| CN115411701B (en) * | 2022-07-28 | 2023-04-21 | 北京智芯微电子科技有限公司 | Power control circuit, voltage adjusting circuit, electronic device and chip |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008029134A (en) * | 2006-07-21 | 2008-02-07 | Asahi Kasei Electronics Co Ltd | Switching power supply |
| CN201066458Y (en) * | 2007-08-06 | 2008-05-28 | 大连大学 | Adjustable current source device for load magnetic suspending control circuit |
| JP6380953B2 (en) * | 2012-10-31 | 2018-08-29 | ローム株式会社 | Electronic circuit |
| CN104066242B (en) * | 2014-06-09 | 2016-01-06 | 浙江大学 | A kind of inverse-excitation type LED constant-current driver has the control chip of measuring ability |
-
2014
- 2014-11-25 CN CN201410686729.9A patent/CN104460808A/en active Pending
-
2015
- 2015-06-11 CN CN201510316911.XA patent/CN105005348B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN105005348A (en) | 2015-10-28 |
| CN104460808A (en) | 2015-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105005348B (en) | A kind of beam excitation amplifying type field intensity detection current source | |
| CN104218558B (en) | Anti-surging high tension protection circuit | |
| CN104467418A (en) | Precise inverse comprehension power source based on logic protection emitter-coupled type circuit | |
| CN104898755B (en) | A kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection | |
| CN105958831A (en) | Voltage regulation circuit based bipolar switch voltage-stabilizing power supply | |
| CN204189060U (en) | A kind of novel compensation power supply of being powered by accurate inverse current source | |
| CN202524600U (en) | Buck LED constant current drive control circuit | |
| CN204190617U (en) | A kind of temperature-compensating stabilized voltage power supply | |
| CN205427684U (en) | Intelligence constant voltage power supply control circuit | |
| CN204189059U (en) | A kind of accurate reverse bias adjustable current source | |
| CN204334323U (en) | A kind of biased adjustable current source of virtual protection emitter-base bandgap grading manifold type | |
| CN204314763U (en) | The accurate reverse bias adjustable current source of a kind of beam excitation formula | |
| CN107093886A (en) | It is a kind of to be embedded in solar powered network from the voltage security power supply circuit become in device | |
| CN104459234A (en) | Novel bias-adjustable temperature compensation power source | |
| CN204334324U (en) | A kind of accurate Contrary compensation power supply of logic-based protection emitter-base bandgap grading manifold type circuit | |
| CN105005347B (en) | A kind of three linear buffer drive-types amplify supply unit | |
| CN204314350U (en) | A kind of novel biased adjustable temperature offset supply | |
| CN204190618U (en) | A kind of biased adjustable temperature offset supply | |
| CN203522162U (en) | Undervoltage protection and overcurrent protection circuit | |
| CN204190619U (en) | A kind of temp. compensation type power supply | |
| CN202997654U (en) | Constant-voltage constant-current charging circuit | |
| CN105099236B (en) | A kind of VCC accessory power supplys power supply circuit | |
| CN206041809U (en) | Bipolarity switching power supply | |
| CN214281703U (en) | Constant voltage and constant current circuit for oven | |
| CN204331525U (en) | A kind of temp. compensation type logic amplifies stabilized voltage supply device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| CB03 | Change of inventor or designer information |
Inventor after: Li Chao Inventor before: Lei Mingfang |
|
| COR | Change of bibliographic data | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160406 Address after: 510660 Guangdong city of Guangzhou province Tianhe District Jubei East Ancestral Temple Street No. 2 building 435 East Applicant after: Li Chao Address before: 610000, 1 floor, 11 Tian Long Street, hi tech Zone, Sichuan, Chengdu Applicant before: CHENGDU JIESHENG SCIENCE & TECHNOLOGY CO., LTD. |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| CB03 | Change of inventor or designer information |
Inventor after: Yuan Siliang Inventor after: Zhang Kai Inventor after: Huang Lanzhi Inventor after: Luo Yafang Inventor after: Sang Yang Inventor after: Li Lianhai Inventor after: Niu Xiaodan Inventor after: You Ning Inventor after: Ma Zengqiang Inventor after: Liu Ran Inventor after: Wang Feng Inventor after: Han Shuo Inventor after: Li Fengjiao Inventor after: Chen Xiaohu Inventor after: Xu Ke Inventor after: Gong Lianxing Inventor after: Shao Zhuyu Inventor after: Wang Jiqiang Inventor after: Ma Song Inventor after: Liu Wenzhe Inventor after: Wang Yang Inventor after: Cheng Jin Inventor after: Ai Lubo Inventor after: Kong Cheng Inventor after: Ma Qun Inventor after: Geng Jin Inventor after: Zhang Shunsheng Inventor after: Zhang Lei Inventor after: Li Yong Inventor after: Fu Yusong Inventor after: Tian Guimin Inventor after: Liu Xiao Inventor before: Li Chao |
|
| COR | Change of bibliographic data | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160512 Address after: 199 Zhonghua Road, Mudan District, Shandong, Heze 274000, China Applicant after: Heze Power Supply Company, State Grid Shandong Electric Power Co., Ltd. Applicant after: HEZE TIANRUN ELECTRIC POWER SURVEY AND DESIGN CO., LTD. Address before: 510660 Guangdong city of Guangzhou province Tianhe District Jubei East Ancestral Temple Street No. 2 building 435 East Applicant before: Li Chao |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160608 Termination date: 20170611 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |