CN104993008A - Device structure for converting terahertz radiation into infrared radiation - Google Patents
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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Abstract
The invention belongs to the field of terahertz detection and imaging, and provides a device structure for converting terahertz radiation into infrared radiation. The device structure is applied to a terahertz detection system, and is disposed between a terahertz source and an infrared detector. The structure comprises a transparent substrate, and an infrared emission layer, a metal reflection layer and an absorbing layer which are sequentially arranged on the transparent substrate. The absorbing layer is composed of a plurality of 'cross'-shaped absorbing units which are arranged periodically; each absorbing unit is composed of dielectric layers and metal graphic layers which are arranged alternately; and the top layer of each absorbing unit is a metal graphic layer, and one dielectric layer is arranged between every two metal radiation layers. By adopting the device structure for converting terahertz radiation into infrared radiation, the terahertz wave absorption rate can reach 90% (the bandwidth is 1THz) at a designed THz frequency point, and terahertz radiation can be converted into infrared radiation for work of the infrared detector. Therefore, terahertz detection is realized, and high-resolution and high-sensitivity terahertz detection is realized by using a mature infrared detection technology.
Description
Technical field
The invention belongs to terahertz detection and imaging field, be specifically related to the Design & preparation that a kind of terahertz emission is converted to the device architecture of infrared radiation.
Background technology
THz wave is from the eighties of last century middle and later periods eighties, just by definite designation, scientists will be referred to as far ir ray before this.THz wave refers to the electromagnetic wave of frequency in 0.1THz to 10THz scope, wavelength at 3mm to 30 μm of scopes, from frequency, at radio wave and light wave, between millimeter wave and infrared ray; From energy, between electronics and photon, both not exclusively applicable optical theory processed, and the theory being also not exclusively applicable to microwave is studied.In the past due to the restriction of the generation and sensitive Detection Techniques that are subject to effective THz source, seldom related in terahertz wave band correlative study data.In recent years, along with the fast development of new technologies and materials, Terahertz Technology not only continues to come into one's own in basic scientific research, and its application study also causes the interest of people, the application etc. in the chemical synthesis processes such as such as safety inspection, Non-Destructive Testing, medical diagnosis and pharmacy.Compared with other ripples, the feature of THz wave has the frequency range of 1. terahertz emission very wide, the various macromolecular rotational frequency of its nearly cover and concussion frequency; 2. the energy of terahertz emission is very little, only has a few milli electron-volt, is not easy to destroy detected material; 3. terahertz emission has very high spatial resolution and temporal resolution; 4. terahertz emission has the penetrability to Cucumber; 5. the time-domain spectral signal to noise ratio of terahertz emission is very high.
Electromagnetism Meta Materials is also referred to as artificial electromagnetic material, refer to that the sub-wavelength macroscopic view elementary cell with geometry in particular periodically or aperiodically arranges formed artificial material, there is extraordinary physics such as such as negative refraction, unusual Doppler effect, unusual Cherenkov effect, perfect lens etc. special.People can control material properties by design cell structure artificially, form the non-existent special construction material of nature, and then control electromagnetic wave propagation.Theoretically, by the optimal design to special construction model, realize the perfect matching of effective dielectric constant and magnetic permeability, make the impedance matching that electromagnetism meta-material absorber and free space reach good, to reduce electromagnetic reflection; And the other end makes absorber and free space reach impedance mismatching, make electromagnetic transmission very low, like this, can realize electromagnetic high-selenium corn.But ad hoc structure only carries out resonance absorbing to specific frequency, bandwidth is narrower, the absorptivity increasing meta-material absorber thus and the research expanding Absorber Bandwidth are necessary.
In addition, terahertz detector is that the electromagenetic wave radiation of terahertz wave band (30-3000 μm) is converted into the detectable signal of telecommunication, realizes the observation of things to external world, has important military and civilian prospect.Terahertz detector also has Multiple Type, wherein micro-metering bolometer is infrared and one of the important application of terahertz detection device, its operation principle has been come mainly through the micro-bridge structure suspended, light absorbing zone accepts extraneous Terahertz or infrared radiation causes microbridge temperature to change, the change of temperature causes the resistance of thermistor thin film to change, the change of this electric property is by electrode detection, and biography sends it to reading circuit, settling signal process and imaging.At present, the research of terahertz detector is just in the starting stage, and infrared detection technique relative maturity, high-resolution, high sensitivity detection can be realized.
To sum up, the present invention designs a kind of device architecture terahertz emission being converted to infrared radiation, work in terahertz detection system, between THz source and Infrared Detectors, by infrared detection technique and meta-material absorber connected applications in terahertz detection field.
Summary of the invention
The object of the present invention is to provide a kind of terahertz emission to be converted to the device architecture of infrared radiation, utilize this device architecture, THz wave absorptivity 90% (bandwidth 1THz) can be reached at the THz frequency of design, and convert infrared radiation to.
For achieving the above object, the technical solution used in the present invention is:
Terahertz emission is converted to a device architecture for infrared radiation, it is characterized in that, this structure comprises infrared-emitting layer, metallic reflector and absorbed layer that transparent substrates, transparent substrates set gradually; Described absorbed layer is made up of several " ten " font absorptive unit periodic arrangement, and each absorptive unit is made up of the dielectric layer be mutually arranged alternately and metal pattern layer, and absorptive unit top layer is be dielectric layer between metal pattern layer and metallic reflector.
Further, in described absorptive unit, every layer of metal pattern layer shape is identical, and size is different, absorbs in order to form wide-band Terahertz.Further, for ease of processing, usually adopt the design of metallic reflector up metal pattern layer decreasing dimensions.
Described absorptive unit is of a size of 10 ~ 30 μm, and live width is 1 ~ 3 μm, special instruction, and the size of absorptive unit refers to the size of first layer metal graph layer on metallic reflector.
In described absorptive unit, metallic pattern number of layers is more than or equal to 3; Metallic pattern layer material is gold, silver or aluminium, and every layer thickness is 50 ~ 200nm; Dielectric layer material is silicon nitride, silica or polyimides, and every layer thickness is 1-3 μm.
Described metallic reflection layer material is gold, silver or aluminium, and thickness is 50 ~ 200nm.
Described infrared emission layer material is graphite, and thickness is 5 ~ 10 μm.
Described transparent substrates is glass or polymer film.
It should be noted that, in the present invention, THz wave absorption peak changes according to design metal pattern layer size, in absorptive unit, every layer of metal level size fine setting forms the close Terahertz absorption spectra of multiple absorption peak, and the THz wave that the superposition of the plurality of peak obtains wider frequency section absorbs; Based on this, according to different application demand, those skilled in the art can determine the concrete size of multiple layer metal graph layer in its absorptive unit on basis of the present invention.
Effect of the present invention is: provide a kind of terahertz emission to be converted to the device architecture of infrared radiation, is applied in terahertz detection system, between THz source and Infrared Detectors; THz wave absorptivity 90% (bandwidth 1THz) can be reached at the THz frequency of design, realize terahertz emission to be converted to infrared radiation simultaneously, for Infrared Detectors work, thus realize terahertz detection, utilize ripe infrared detection technique to realize high-resolution and highly sensitive terahertz detection.
Accompanying drawing explanation
Fig. 1 is the device architecture schematic diagram that terahertz emission of the present invention is converted to infrared radiation, wherein, 20 be absorbed layer, 3 is metallic reflector, 2 is infrared-emitting layer, 1 for transparent substrates.
Fig. 2 is that embodiment terahertz emission is converted to absorptive unit schematic top plan view in the device architecture of infrared radiation, wherein, 3 is the 4th metal pattern layer for metallic reflector, 5 be the first metal pattern layer, 7 be the second metal pattern layer, 9 is the 3rd metal pattern layer, 11.
Fig. 3 is that embodiment terahertz emission is converted to absorptive unit schematic side view in the device architecture of infrared radiation, wherein, 4 be first medium layer, 6 for second dielectric layer, 8 be the 3rd dielectric layer, 10 be the 4th dielectric layer.
Fig. 4 is the Terahertz response spectra that embodiment terahertz emission is converted to the device architecture of infrared radiation.
Embodiment
Below in conjunction with specific embodiments and the drawings, the present invention is described in further details.
Terahertz emission is converted to a device architecture for infrared radiation, and its structure as shown in Figure 1, comprises 1 infrared-emitting layer set gradually 2, metallic reflector 3 and absorbed layer 20 in transparent substrates 1, transparent substrates; Described absorbed layer is made up of several " ten " font absorptive unit periodic arrangement, and each absorptive unit is made up of the dielectric layer be mutually arranged alternately and metal pattern layer, and absorptive unit top layer is be dielectric layer between metal pattern layer and metallic reflector.
In the present embodiment, as shown in Figure 2,3, each absorptive unit size L is 20 μm, live width W is 2 μm, adopt 4 layers of metal pattern layer, every layer of metal pattern layer shape identical (live width is constant), decreasing dimensions, the equal aluminium of metal pattern layer, dielectric layer all selects silicon nitride, thickness to be 1 ~ 2 μm, and transparent substrates is sheet glass, metallic reflector aluminium, thickness are 150nm, and infrared-emitting layer selects graphite, thickness to be 10 μm; Following preparation process is adopted to prepare:
Step 1. sheet glass cleans: use acetone to carry out Ultrasonic Cleaning to sheet glass, then use alcohol immersion, and clean with deionized water rinsing afterwards, nitrogen dries up, and puts into baking oven and dries, be then cooled to room temperature;
Step 2. allocates graphite dispersing solution: add 80% terpinol respectively, 16% dibutyl phthalate and 4% ethyl cellulose, and water-bath 90 DEG C heats and stirs and causes dissolving, adds graphite and stirs and ultrasonicly cause graphite dispersion;
Step 3. spin coating graphite: adopt spin-coating method spin coating graphite, rotating speed 1000 revs/min, turn 10 seconds, then 2000 revs/min, turn 20 seconds, rubberization thickness about 10 μm, then toasts 10min, until organic solvent volatilization, i.e. infrared reflecting layer;
Step 4. sputtered aluminum: adopt sputter coating machine, base vacuum is 4 × 10-4Pa, and sputtering vacuum is 5 × 10-1Pa, and silicon substrate temperature is 25 DEG C, and sputtering power is 50W, and sputtering time is 3min, i.e. metallic reflector;
Step 5. vapour deposition silicon nitride: adopt the method for PECVD at the selected surface deposition silicon nitride layer of high resistant silicon chip, the thickness of silicon nitride layer at 1-2 μm, i.e. first medium layer;
Step 6. revolves glue: adopt spin-coating method effects on surface coating AZ5214 type reversion glue; Spin coating rotating speed is 1000 revs/min, turns 10 seconds, then 3000 revs/min, turns 30 seconds;
Step 7. front baking: the substrate after gluing is toasted, baking temperature is set as 100 DEG C, and baking time is set as 2min;
Step 8. first time exposure: adopt the method for contact exposure to expose photoresist layer, make Graphic transitions on mask plate on photoresist, the time for exposure of exposure first time is 1s;
Dry after step 9.: toast the substrate after first time exposure, baking temperature is set as 120 DEG C, and baking time is 90s;
Step 10. second time exposure: adopt the method for contact exposure to carry out general exposure to photoresist layer, the figure on photoresist is reversed, and secondary time for exposure is 68s;
Step 11. is developed: adopt RZX-308 developing rubber to develop to the silicon chip exposed, development temperature is 25 DEG C, and developing time is 45s, uses a large amount of deionized water repeatedly to rinse after development;
Step 12. sputters: adopt sputter coating machine, base vacuum is 4 × 10-4Pa, and sputtering vacuum is 5 × 10-1Pa, and silicon substrate temperature is 25 DEG C, and sputtering power is 50W, and sputtering time is 3min, i.e. the first metal pattern layer;
Step 13. is peeled off: the silicon chip sputtered uses acetone ultrasonic cleaning, uses alcohol immersion, then use a large amount of deionized water rinsing totally in drying in oven after getting rid of residual photoresist;
Step 14. repeats step 5 to step 13 until form 4 layers of metallic pattern Rotating fields, namely obtains the device architecture that terahertz emission of the present invention is converted to infrared radiation.
Be illustrated in figure 4 the Terahertz response spectra that embodiment terahertz emission is converted to the device architecture of infrared radiation, can see that from response spectra 4 layers of metal pattern layer form 4 Terahertz absworption peaks, 4 absworption peaks form wide-band Terahertz absorption spectra, achieve wide-band Terahertz to absorb, THz wave absorptivity 90% (bandwidth 1THz) can be reached at the THz frequency of design, realize terahertz emission to be converted to infrared radiation simultaneously.
The above, be only the specific embodiment of the present invention, arbitrary feature disclosed in this specification, unless specifically stated otherwise, all can be replaced by other equivalences or the alternative features with similar object; Step in disclosed all features or all methods or process, except mutually exclusive feature and/or step, all can be combined in any way.
Claims (7)
1. terahertz emission is converted to a device architecture for infrared radiation, it is characterized in that, this device architecture comprises infrared-emitting layer, metallic reflector and absorbed layer that transparent substrates, transparent substrates set gradually; Described absorbed layer is made up of several " ten " font absorptive unit periodic arrangement, and each absorptive unit is made up of the dielectric layer be mutually arranged alternately and metal pattern layer, and absorptive unit top layer is be dielectric layer between metal pattern layer and metallic reflector.
2. be converted to the device architecture of infrared radiation by terahertz emission described in claim 1, it is characterized in that, in described absorptive unit, every layer of metal pattern layer shape is identical, and size is different.
3. be converted to the device architecture of infrared radiation by terahertz emission described in claim 1, it is characterized in that, described absorptive unit is of a size of 10 ~ 30 μm, and live width is 1 ~ 3 μm.
4. be converted to the device architecture of infrared radiation by terahertz emission described in claim 1, it is characterized in that, in described absorptive unit, metallic pattern number of layers is more than or equal to 3; Metallic pattern layer material is gold, silver or aluminium, and every layer thickness is 50 ~ 200nm; Dielectric layer material is silicon nitride, silica or polyimides, and every layer thickness is 1-3 μm.
5. be converted to the device architecture of infrared radiation by terahertz emission described in claim 1, it is characterized in that, described metallic reflection layer material is gold, silver or aluminium, and thickness is 50 ~ 200nm.
6. be converted to the device architecture of infrared radiation by terahertz emission described in claim 1, it is characterized in that, described infrared emission layer material is graphite, and thickness is 5 ~ 10 μm.
7. be converted to the device architecture of infrared radiation by terahertz emission described in claim 1, it is characterized in that, described transparent substrates is glass or polymer film.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2447574C1 (en) * | 2010-11-16 | 2012-04-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Новосибирский национальный исследовательский государственный университет" (Новосибирский национальный исследовательский государственный университет, НГУ) | Terahertz emission converter (versions) |
| CN103489943A (en) * | 2013-10-16 | 2014-01-01 | 电子科技大学 | Terahertz absorption layer of carbon nano tube and metamaterial composite structure and preparation method of terahertz absorption layer |
| CN104143580A (en) * | 2014-08-08 | 2014-11-12 | 电子科技大学 | Terahertz wave detector and manufacturing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2447574C1 (en) * | 2010-11-16 | 2012-04-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Новосибирский национальный исследовательский государственный университет" (Новосибирский национальный исследовательский государственный университет, НГУ) | Terahertz emission converter (versions) |
| CN103489943A (en) * | 2013-10-16 | 2014-01-01 | 电子科技大学 | Terahertz absorption layer of carbon nano tube and metamaterial composite structure and preparation method of terahertz absorption layer |
| CN104143580A (en) * | 2014-08-08 | 2014-11-12 | 电子科技大学 | Terahertz wave detector and manufacturing method thereof |
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Application publication date: 20151021 |