CN104070731A - Broadband high-performance manual terahertz wave-absorbing material and design method thereof - Google Patents
Broadband high-performance manual terahertz wave-absorbing material and design method thereof Download PDFInfo
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- CN104070731A CN104070731A CN201410294724.1A CN201410294724A CN104070731A CN 104070731 A CN104070731 A CN 104070731A CN 201410294724 A CN201410294724 A CN 201410294724A CN 104070731 A CN104070731 A CN 104070731A
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Abstract
The invention discloses a broadband high-performance manual terahertz wave-absorbing material and a design method thereof. The broadband high-performance manual terahertz wave-absorbing material comprises a plurality of material units, wherein each material unit comprises chromium and photoresist SU-8, specifically, a metal chromium film is arranged on a substrate, and is used as an anti-transmission layer; the photoresist SU-8 and square arrays of the chromium are alternatively overlapped on the metal chromium film from bottom to top to form a pyramid shape; five layers of the square arrays of the chromium are arranged, wherein the thickness of each layer of 200nm, the side lengths of each square arrays are sequentially regularly reduced from bottom to top, and are sequentially 70 micrometers, 66 micrometers, 62 micrometers, 58 micrometers and 54 micrometers from bottom to top; the thickness of each layer of photoresist SU-8 is 4 micrometers; the period of the material units is 95 micrometers. According to the broadband high-performance manual terahertz wave-absorbing material, the large broadband absorbing effect of a terahertz wave band is realized, the process limit of making a conventional metamaterial is broken through, and the design and the making of a three-dimensional manual special medium of the terahertz wave band are completed.
Description
Technical field
The invention belongs to terahertz wave band wireless energy transfer field, relate in particular to the artificial Terahertz absorbing material of a kind of high-performance broadband and method for designing thereof.
Background technology
THz wave refer to frequency at 0.1THz to the electromagnetic wave within the scope of 10THz, wavelength about 0.03mm between 3mm, between microwave and infrared waves.THz ripple has the advantages that a lot of microwaves and light wave do not possess, and for example THz photon energy is low, only has several electron-volts, can not damage detection material; Most nonmetal non-polar material is less to THz radiation absorption, makes it can be for detection of material internal information; THz clock only comprises the electromagnetic viscosimeter in several cycles, the frequency band of individual pulse can cover GHz to the scope of tens THz, vibration and the rotational energy level of a lot of large biological molecules, the phonon vibration energy level of dielectric, semiconductor, superconductor etc. is all in the wavelength band of THz.At present mostly by thinking that dry Detection Techniques obtain the realtime power of THz, because THz pulse has very high peak power, have very high signal to noise ratio in time-domain spectroscopy system.Owing to possessing above-mentioned advantage, Terahertz Technology can be brought into play huge effect in fields such as safety check, sensing and imagings, has been subject in recent years showing great attention to of researchers, and many new units that are operated in terahertz wave band also arise at the historic moment.
Absorbing material is to a certain frequency or frequency range electromagnetic wave, to have the material of strong absorption, can or shield a certain specific wavelength or wave band for solar energy acquisition, has wide range of applications.Had scientist to design the material that utilizes super material to absorb in the efficient arrowband of terahertz wave band multi-angle, but be limited to the manufacture difficulty of three-dimensional super material, the super material of two dimension can only be realized arrowband and absorb, and cannot realize the effect that ripple is inhaled in broadband.
Summary of the invention
The object of the invention is can not realize for current material the defect of the large wide band absorption of terahertz wave band, the artificial Terahertz absorbing material of a kind of high-performance broadband and method for designing thereof are provided.
The artificial Terahertz absorbing material of high-performance broadband, is comprised of a plurality of material cell, and each material cell comprises chromium and photoresist SU-8; Concrete: in substrate, be provided with layer of metal chromium film, this layer of crome metal film is as anti-transmission layer; On crome metal film, the square array of photoresist SU-8 and chromium alternately superposes and forms pyramid shape from bottom to top; The square array of described chromium has five layers, and the thickness of every layer is 200nm, and its square array length of side is regular dwindling successively from bottom to top, from bottom to top successively: 70 μ m, 66 μ m, 62 μ m, 58 μ m and 54 μ m; The thickness of described every layer photoetching glue SU-8 is 4 μ m; The material cell cycle is 95 μ m;
Near the dielectric coefficient of described photoresist photoresist SU8 1THz frequency is about 2.79-0.31i, magnetic conductivity σ=8 * 10 of metal material chromium (chromium)
6s/m.
A method for designing for the artificial Terahertz absorbing material of high-performance broadband, specifically comprises the steps:
Step 1. is theoretical according to Effective medium: performance Metamaterials(MMs) is determined by magnetic conductivity μ and dielectric coefficient ε, and reflectivity R (ω) and transmissivity T (ω) depend on refractive index n and wave impedance Ω, all relevant with dielectric coefficient ε to magnetic conductivity μ.Therefore, can be by regulating magnetic conductivity μ and the dielectric coefficient ε of MMs to obtain needed transmission and reflecting effect.
S parameter by analog computation material, comprises
with
thereby, calculate transmission parameters
and reflection parameters
; Wherein
，
Absorption parameter
by following formula, obtain:
。
And having under the condition of the anti-transmission layer of metal transmission coefficient
be 0, that is:
。
Therefore, absorption coefficient
can be by regulating magnetic conductivity μ and dielectric coefficient ε to modulate.Metamaterials can be by regulating the shape and size of micro-structural to determine its magnetic conductivity μ and dielectric coefficient ε under certain frequency, so can realize absorption coefficient under certain frequency
modulation.
Step 2. is made material, specific as follows:
Sputter layer of metal chromium film in substrate, this layer of crome metal film is as anti-transmission layer; On crome metal film, the square array of photoresist SU-8 and chromium film alternately superposes and forms pyramid shape from bottom to top; Every layer photoetching glue SU-8 makes by spin coating and has been heating and curing, and the square array of every layer of chromium film has been peeled off by photoetching and sputter; The square array of described chromium film has five layers, and the thickness of every layer is 200nm, and its square array length of side is regular dwindling successively from bottom to top, from bottom to top successively: 70 μ m, 66 μ m, 62 μ m, 58 μ m and 54 μ m; The thickness of described every layer photoetching glue SU-8 is 4 μ m;
Existing experimental results show that, the height that the metal film structures of individual layer can realize some frequencies absorbs, by the frequency that regulates the size of metal film structures and cycle can modulate absorption, pyramidal metal film structures size gradual change from top to bottom in board design, their absorption frequency is contiguous, and stack can realize the efficient absorption in large broadband.
Beneficial effect of the present invention is as follows:
(1) the present invention can realize the large wide band absorption under terahertz wave band.The absorbing material of terahertz wave band was usually arrowband in the past, the full width at half maximum (FWHM) coefficient (FWHM) of the broadband absorbing material that current effect is best also only has 55%, the present invention has done very large raising to this parameter, and its full width at half maximum (FWHM) coefficient (FWHM) has surpassed 100%.
(2) method for designing in the present invention can realize adjustable wide band absorption effect.By regulating size and the cycle of micro-structural, the absorption frequency of each structural correspondence also can change, and according to method for designing of the present invention, can design the wide band absorption material under different frequency.
(3) absorbing material designing in the present invention has ultra-thin feature.The electromagnetic wavelength of 1THz is about 300 μ m, and the absorbing material gross thickness designing in the present invention is about 21 μ m, and its thickness is less than 1/10th of corresponding wavelength.
Accompanying drawing explanation
Fig. 1 is the simulation top view (2*2 cell schematics) of Terahertz broadband absorbing material.
Fig. 2 is the profile of single Terahertz absorbing material unit, and wherein black part is divided into metal structure, and the white portion between metal structure is photoresist SU-8.
Fig. 3 is material cell TE pattern simulation absorption spectra under different incidence angles in simulation softward (CST Microwave studio).
Fig. 4 is material cell TM pattern simulation absorption spectra under different incidence angles in simulation softward (CST Microwave studio).
Fig. 5 is the absorbing state of single-layer metal structure to a certain fixed frequency (0.8THz), and red line and blue line represent respectively the absorptivity of simulation and actual measurement.
Fig. 6 is in simulation under different frequency, the distribution schematic diagram of Electric and magnetic fields in cellular construction.
Fig. 7 is the absorption spectra of laboratory sample under different incidence angles degree.
Fig. 8 is sample observation figure under the microscope, and wherein right figure is respectively the image of focal plane when top level structure and fabric up and down.
The specific embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
As shown in Figure 1, Figure 2, the artificial Terahertz absorbing material of a kind of high-performance broadband, is comprised of a plurality of material cell, and each material cell comprises chromium and photoresist SU-8; Concrete: in substrate, be provided with layer of metal chromium film, this layer of crome metal film is as anti-transmission layer; On crome metal film, the square array of photoresist SU-8 and chromium alternately superposes and forms pyramid shape from bottom to top; The square array of described chromium has five layers, and the thickness of every layer is 200nm, and its square array length of side is regular dwindling successively from bottom to top, from bottom to top successively: 70 μ m, 66 μ m, 62 μ m, 58 μ m and 54 μ m; The thickness of described every layer photoetching glue SU-8 is 4 μ m; The material cell cycle is 95 μ m;
Near the dielectric coefficient of described photoresist photoresist SU-8 1THz frequency is about 2.79-0.31i, magnetic conductivity σ=8 * 10 of metal material chromium (chromium)
6s/m.
A method for designing for the artificial Terahertz absorbing material of high-performance broadband, specifically comprises the steps:
Step 1. is theoretical according to Effective medium: performance Metamaterials(MMs) is determined by magnetic conductivity μ and dielectric coefficient ε, and reflectivity R (ω) and transmissivity T (ω) depend on refractive index n and wave impedance Ω, all relevant with dielectric coefficient ε to magnetic conductivity μ.Therefore, can be by regulating magnetic conductivity μ and the dielectric coefficient ε of MMs to obtain needed transmission and reflecting effect.
S parameter by analog computation material, comprises
with
thereby, calculate transmission parameters
and reflection parameters
; Wherein
，
Absorption parameter
by following formula, obtain:
。
And having under the condition of the anti-transmission layer of metal transmission coefficient
be 0, that is:
。
Therefore, absorption coefficient
can be by regulating magnetic conductivity μ and dielectric coefficient ε to modulate.Metamaterials can be by regulating the shape and size of micro-structural to determine its magnetic conductivity μ and dielectric coefficient ε under certain frequency, so can realize absorption coefficient under certain frequency
modulation.
Step 2. is made material, specific as follows:
Sputter layer of metal chromium film in substrate, this layer of crome metal film is as anti-transmission layer; On crome metal film, the square array of photoresist SU-8 and chromium alternately superposes and forms pyramid shape from bottom to top; Every layer photoetching glue SU-8 makes by spin coating and has been heating and curing, and the square array of every layer of chromium has been peeled off by photoetching and sputter; The square array of described chromium has five layers, and the thickness of every layer is 200nm, and its square array length of side is regular dwindling successively from bottom to top, from bottom to top successively: 70 μ m, 66 μ m, 62 μ m, 58 μ m and 54 μ m; The thickness of described every layer photoetching glue SU-8 is 4 μ m;
Existing experimental results show that, the height that the metal film structures of individual layer can realize some frequencies absorbs, by the frequency that regulates the size of metal film structures and cycle can modulate absorption, pyramidal metal film structures size gradual change from top to bottom in board design, their absorption frequency is contiguous, and stack can realize the efficient absorption in large broadband.As shown in accompanying drawing 3, Fig. 4, the metal film structures of individual layer, at simulation softward CST microwave studio Imitating, can realize and between 0.9 to 1.6THz, reach more than 80% absorptivity.
Referring to accompanying drawing 3, Fig. 4, contrast TE and TM ripple absorption intensity when multi-angle incident, can find, the absorbent structure designing in the present invention does not rely on incident angle and pattern, when maximum incident angle reaches 70 degree, still can keep high-absorbility and large bandwidth.
Laboratory sample above completes by spin-on dielectrics and making metal micro structure at silicon chip (transparent at terahertz wave band), and material thickness approximately 21 μ m, are less than 1/10th of 1THz frequency electromagnetic wavelength (300 μ m).
Actual measured results: in centre wavelength, reflectivity during vertical incidence≤-15 dB, the FWHM(full width at half maximum (FWHM) of absorption spectra during vertical incidence) reach 100%(with respect to centre wavelength), at 0.7THz, to the frequency range of 2.3THz, realized more than 80% absorption.Be limited to taking measurement of an angle of terahertz time-domain system, the oblique incidence Optical thin film of sample only proceeds to 40 degree, under the different angles condition of incidence of 0 to 40 degree, sample has all kept very high Absorber Bandwidth, and absorptivity and vertical incidence during different angles oblique incidence are suitable.
The broadband absorbing material of terahertz wave band has also successfully been made in experimental design, has not only obtained in design the wave-absorbing effect in large broadband, has also broken through the bottleneck of MMs micro-nano processing technology, has realized the preparation of the three-dimensional MMs of terahertz wave band.
embodiment 1
The wave-absorbing effect of the artificial Terahertz absorbing material of high-performance broadband
According to above-mentioned method for designing, on silicon chip, completed the making of sample, referring to accompanying drawing 6, Fig. 7 and Fig. 8, alignment precision is better, by regulating microscopical focal length, can find out that the metal structure of different size is positioned at different height, and layer is in same position substantially with the structure of layer, substantially can reach the pyramidal effect in design.
The absorbing property test result of sample under terahertz time-domain system (TDS Zomega-Z3) is as illustration 5, at 0.7THz, to the frequency range of 2.3THz, realized more than 80% absorption, in centre wavelength, reflectivity during vertical incidence≤-15 dB, the FWHM(full width at half maximum (FWHM) of absorption spectra during vertical incidence) reach 100%(with respect to centre wavelength), under the incidence angle of 0 to 40 degree, can keep very high Absorber Bandwidth, performance and vertical incidence are suitable.
In addition,, by changing the size of unit cycle and metal structure, corresponding absorption frequency also can be adjusted.That is to say, the method for designing in the present invention not only can realize the existing large bandwidth assimilation effect of sample, can also obtain the electromagnetic high-performance broadband of other frequencies by change parameter and absorb.
Claims (5)
1. the artificial Terahertz absorbing material of high-performance broadband, is characterized in that being comprised of a plurality of material cell, and each material cell comprises chromium and photoresist SU-8; Concrete: in substrate, be provided with layer of metal chromium film, this layer of crome metal film is as anti-transmission layer; On crome metal film, the square array of photoresist SU-8 and chromium alternately superposes and forms pyramid shape from bottom to top.
2. the artificial Terahertz absorbing material of a kind of high-performance broadband as claimed in claim 1, the square array that it is characterized in that described chromium has five layers, and the thickness of every layer is 200nm, its square array length of side is regular dwindling successively from bottom to top, from bottom to top successively: 70 μ m, 66 μ m, 62 μ m, 58 μ m and 54 μ m; The thickness of described every layer photoetching glue SU-8 is 4 μ m; The material cell cycle is 95 μ m.
3. the artificial Terahertz absorbing material of a kind of high-performance broadband as claimed in claim 1, is characterized in that near the dielectric coefficient of described photoresist photoresist SU-8 1THz frequency is about 2.79-0.31i, magnetic conductivity σ=8 * 10 of metal material chromium
6s/m.
4. a method for designing for the artificial Terahertz absorbing material of high-performance broadband, is characterized in that comprising the steps:
Step 1. is theoretical according to Effective medium: the performance of Metamaterials is determined by magnetic conductivity μ and dielectric coefficient ε, and reflectivity R (ω) and transmissivity T (ω) depend on refractive index n and wave impedance Ω, all relevant with dielectric coefficient ε to magnetic conductivity μ; Therefore, can be by regulating magnetic conductivity μ and the dielectric coefficient ε of MMs to obtain needed transmission and reflecting effect;
By the S parameter of analog computation material, S parameter comprises
with
thereby, calculate transmission parameters
and reflection parameters
; Wherein
；
Absorption parameter
by following formula, obtain:
；
And having under the condition of the anti-transmission layer of metal transmission coefficient
be 0, that is:
；
Absorption coefficient
can be by regulating magnetic conductivity μ and dielectric coefficient ε to modulate; Metamaterials can be by regulating the shape and size of micro-structural to determine its magnetic conductivity μ and dielectric coefficient ε under certain frequency;
Step 2. is made material, specific as follows:
Sputter layer of metal chromium film in substrate, this layer of crome metal film is as anti-transmission layer; On crome metal film, the square array of photoresist SU-8 and chromium alternately superposes and forms pyramid shape from bottom to top; Every layer photoetching glue SU-8 makes by spin coating and has been heating and curing, and the square array of every layer of chromium has been peeled off by photoetching and sputter.
5. the method for designing of the artificial Terahertz absorbing material of a kind of high-performance broadband as claimed in claim 4, the square array that it is characterized in that described chromium has five layers, and the thickness of every layer is 200nm, its square array length of side is regular dwindling successively from bottom to top, from bottom to top successively: 70 μ m, 66 μ m, 62 μ m, 58 μ m and 54 μ m; The thickness of described every layer photoetching glue SU-8 is 4 μ m.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104466427A (en) * | 2014-12-24 | 2015-03-25 | 中国计量学院 | Efficient broadband terahertz wave absorption device based on highly-doped silicon materials |
| CN104714218A (en) * | 2015-02-10 | 2015-06-17 | 枣庄学院 | Terahertz code metasurface for wide-frequency-band radar scattering cross section reduction |
| CN104767012A (en) * | 2015-04-24 | 2015-07-08 | 江苏科技大学 | Frequency selective surface |
| CN104774472A (en) * | 2015-04-10 | 2015-07-15 | 大连东信微波技术有限公司 | Ultra-wideband terahertz wave-absorbing material |
| CN105629463A (en) * | 2016-01-20 | 2016-06-01 | 浙江大学 | Circularly polarized light separator design method based on artificial microstructure super surfaces |
| CN106785468A (en) * | 2017-01-11 | 2017-05-31 | 中国人民解放军空军工程大学 | One kind inhales ripple wave transparent integration Meta Materials |
| CN110081826A (en) * | 2019-04-29 | 2019-08-02 | 中国矿业大学 | Heat-barrier coating ceramic layer thickness measure new method based on Terahertz Technology |
| CN111585034A (en) * | 2020-06-02 | 2020-08-25 | 中国人民解放军军事科学院国防科技创新研究院 | Design method of impedance matching type metamaterial |
| CN112255715A (en) * | 2020-10-23 | 2021-01-22 | 江南大学 | Method for realizing broadband light absorption enhancement based on ultrathin metal film and wave absorbing device |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104466427A (en) * | 2014-12-24 | 2015-03-25 | 中国计量学院 | Efficient broadband terahertz wave absorption device based on highly-doped silicon materials |
| CN104714218A (en) * | 2015-02-10 | 2015-06-17 | 枣庄学院 | Terahertz code metasurface for wide-frequency-band radar scattering cross section reduction |
| CN104774472A (en) * | 2015-04-10 | 2015-07-15 | 大连东信微波技术有限公司 | Ultra-wideband terahertz wave-absorbing material |
| CN104767012A (en) * | 2015-04-24 | 2015-07-08 | 江苏科技大学 | Frequency selective surface |
| CN105629463A (en) * | 2016-01-20 | 2016-06-01 | 浙江大学 | Circularly polarized light separator design method based on artificial microstructure super surfaces |
| CN105629463B (en) * | 2016-01-20 | 2017-11-24 | 浙江大学 | A kind of design method for the circularly polarized light separator for surpassing surface based on artificial micro-structure |
| CN106785468A (en) * | 2017-01-11 | 2017-05-31 | 中国人民解放军空军工程大学 | One kind inhales ripple wave transparent integration Meta Materials |
| CN110081826A (en) * | 2019-04-29 | 2019-08-02 | 中国矿业大学 | Heat-barrier coating ceramic layer thickness measure new method based on Terahertz Technology |
| CN111585034A (en) * | 2020-06-02 | 2020-08-25 | 中国人民解放军军事科学院国防科技创新研究院 | Design method of impedance matching type metamaterial |
| CN111585034B (en) * | 2020-06-02 | 2021-09-07 | 中国人民解放军军事科学院国防科技创新研究院 | Design method of impedance matching type metamaterial |
| CN112255715A (en) * | 2020-10-23 | 2021-01-22 | 江南大学 | Method for realizing broadband light absorption enhancement based on ultrathin metal film and wave absorbing device |
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