CN104992005B - 一种限制器件模型适用温度范围的方法 - Google Patents
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Citations (2)
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CN103778297A (zh) * | 2014-01-27 | 2014-05-07 | 中国科学院微电子研究所 | Mos器件的sti应力效应建模方法及装置 |
CN104021239A (zh) * | 2014-04-22 | 2014-09-03 | 上海华力微电子有限公司 | 一种采用温度模型进行曲线拟合的方法 |
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CN103778297A (zh) * | 2014-01-27 | 2014-05-07 | 中国科学院微电子研究所 | Mos器件的sti应力效应建模方法及装置 |
CN104021239A (zh) * | 2014-04-22 | 2014-09-03 | 上海华力微电子有限公司 | 一种采用温度模型进行曲线拟合的方法 |
Non-Patent Citations (3)
Title |
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A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature;Jia Kan 等;《Journal of Semiconductors》;20110630;第32卷(第6期);第064002-1-064002-6页 * |
碳化硅MOSFET的变温度参数建模;孙凯 等;《中国电机工程学报》;20130125;第33卷(第3期);第37-43页 * |
针对SPICE开发高精度Pt100 RTD仿真器;电子工程世界;《http://www.eeworld.com.cn/manufacture/icsj/200801/article_2934.html》;20080123;第1-8页 * |
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