CN104979751A - Ring micro-cavity laser with directional output - Google Patents
Ring micro-cavity laser with directional output Download PDFInfo
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- CN104979751A CN104979751A CN201510435083.1A CN201510435083A CN104979751A CN 104979751 A CN104979751 A CN 104979751A CN 201510435083 A CN201510435083 A CN 201510435083A CN 104979751 A CN104979751 A CN 104979751A
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Abstract
The present invention discloses a ring micro-cavity laser with a directional output. The ring micro-cavity laser comprises an annular micro-cavity resonant cavity, and grating structures are etched and distributed on partial inner wall of the annular resonant cavity. The invention provides the annular semiconductor micro-cavity laser, the far field of output light is controlled through the grating structures distributed on the inner wall of a ring part, thus the small-angle single-direction output can be obtained by a high quality factor mode.
Description
Technical field
The present invention relates to field of semiconductor lasers, refer more particularly to the annulus micro-cavity laser that a kind of orientation exports, more specifically, the present invention relates to the annular micro-cavity laser with inwall grating, the orientation that the optical grating construction be wherein distributed on ring part inwall can realize AD HOC exports.By changing the distributed quantity of optical grating construction and angle cycle, can far-field radiation for controlling the mode, make the pattern of high-quality-factor can obtain less far-field divergence angle, keep higher directional couple delivery efficiency simultaneously.The grating of upper inside wall distribution, by the diffraction regulation and control exporting light, makes this annular micro-cavity laser device can realize the directed Laser output of low-angle of high coupling efficiency.
Background technology
Along with developing rapidly of information technology, microelectronic technique live width moves closer to physics limit, and one of optoelectronic intagration main target becoming Information Technology Development particularly realizes high-speed optical interconnection and optical information processing etc.Miniaturization, high efficiency, highly integrated integrated photonic device are the bases that optoelectronic intagration develops.The optical microcavity therefore with advantages such as small size, high-quality-factor, Low threshold and low-power consumption has potential using value in optical communication, light network, optical information processing etc., is optimal light source in Contemporary Information highway technology.Land use models light incidence angle on microcavity and Air Interface is greater than the cirtical angle of total reflection and the Echo Wall (Whispering-Gallery, WG) the type microcavity that implementation pattern limits is the simple optical microcavity of a kind of structure.Circular microcavity is typical echo wall-shaped optical microcavity, there is very high quality factor, but the Rotational Symmetry characteristic of circular optical microcavity makes the output of light field be isotropy, the output of this astaticism makes light field be difficult to effectively be coupled in free space be utilized.Therefore, it is possible to it is the necessary requirement that micro-cavity laser has actual application value that the directed light field realizing high coupling efficiency exports.
Summary of the invention
The object of the invention is to, provide a kind of annular micro-cavity laser, its upper inside wall is distributed with the directed Laser output that angle optical grating construction can realize high coupling efficiency.
For achieving the above object, the invention provides the annulus micro-cavity laser that a kind of orientation exports, it comprises: annular microcavity resonator, and on the internal partial wall of described annular resonant cavity, etching is distributed with optical grating construction.
Wherein, the angle cycle size of described optical grating construction is determined according to the angle quantum number of directed output mode.
Wherein, the angle cycle size of described optical grating construction and the angle quantum number of described directed output mode meet following formula:
α＝360/(v+n)；
Wherein, α is the angle cycle size of described optical grating construction, and v is the angle quantum number of directed output mode, and the span of n is between 1-10.
Wherein, the raster count of described optical grating construction is determined according to the angle quantum number of directed output mode.
Wherein, the raster count of described optical grating construction and the angle quantum number of described directed output mode meet following formula:
N
g＝(v+n)/m；
Wherein, N
gfor the angle cycle size of optical grating construction, v is the angle quantum number of directed output mode, and the span of n is between 1-10, and the span of m is between 3-9.
Wherein, described optical grating construction vertical distribution is in described annulus microcavity resonator inwall.
Wherein, described annular microcavity resonator has identical structure and material with described optical grating construction, and described annular microcavity resonator and described optical grating construction comprise upper limiting layer, active area and lower limit layer.
Wherein, the material of described annular microcavity resonator and optical grating construction comprises various IV races semi-conducting material and its compound and III-V, II-VI group compound, the operation material of organic semiconducting materials and other solid state lasers; The structure of the active area of described annular micro-ring resonant cavity comprises semiconductor bulk material structure, quantum well, quantum wire, quantum dot and quanta cascade structure.
Wherein, the etching depth of described optical grating construction be the radius of described annular microcavity resonator and ring width fixing after, the etching depth of optical grating construction when making the quality factor of described annular microcavity resonator reach maximum.
Wherein, the etching depth of described optical grating construction is between 0.02 μm-1.2 μm, and described annular microcavity resonator ring width is between 0.6 μm-1.5 μm.
Wherein, the projection of often pair of grating of described optical grating construction is identical with the width shared by groove.。
Advantage of the present invention and beneficial effect:
1, this annular semiconductor micro-cavity lasers provided by the invention, is regulated and controled the far field exporting light by the optical grating construction be distributed on ring part inwall, makes the pattern of high-quality-factor can obtain the unidirectional orientation of low-angle and exports.By regulating the degree of depth of grating, the efficiency of pattern coupling output in far-field divergence angle can be improved further and obtain less far-field divergence angle.Therefore annulus micro-cavity laser can be effectively made to realize having good unidirectional directed Laser output by optical grating construction.
2, the present invention is distributed in the number of the optical grating construction on circle ring inner wall by ingenious selection, and the orientation that simultaneously can realize multiple adjacent longitudinal mode exports.
Accompanying drawing explanation
In order to effect object of the present invention and structure being better described and can reach, be described further below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is the floor map of the directed annulus micro-cavity laser exported in the present invention;
Fig. 2 is the schematic perspective view of the directed annulus micro-cavity laser exported in the present invention;
Fig. 3 is transverse electric pattern TE in utilize 2 dimension Finite Element Methods (finite element method, FEM) to carry out in the present invention annulus microcavity that numerical computations obtains
73,1near-field field strength distribution map;
Fig. 4 is by mould field changing method in the present invention, from TE
73,1its far-field distribution figure that the near field distribution figure of pattern calculates;
Fig. 5 is TE in utilize two-dimentional FEM method to carry out in the present invention annulus microcavity that numerical computations obtains
71,1in the far-field emission angle of pattern and the angle of divergence, the coupling efficiency of light is with the change curve schematic diagram of grating depth;
Fig. 6 is TE in utilize two-dimentional FEM method to carry out in the present invention annulus microcavity that numerical computations obtains
71,1in the far-field emission angle of pattern and the angle of divergence, the coupling efficiency of light is with the change curve of annular width.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and consult shown in Fig. 1-Fig. 6, the present invention is described in more detail.
This inner wall section provided by the invention is distributed with the annular semiconductor micro-cavity lasers of optical grating construction, by the far field output characteristic selecting the angle cycle of different inwall raster counts and grating to control different mode in annulus microcavity.The optical grating construction of part distribution can suppress light in the output not having grating distributed areas, light field is exported and concentrates on grating distributed areas.The grating of part distribution makes WG pattern be coupled, and forms a distortion WGM coupled mode containing low order azimuth component composition, and the orientation that this coupled mode can realize light field exports.By selecting suitable grating depth and annular width, the quality factor of selected excitation mode can be optimized further, the coupling efficiency of light in far-field divergence angle degree and the angle of divergence, thus the orientation realizing having good unidirectional exports.That is, fixing ring width, changes grating depth, or the fixed grating degree of depth, when changing fixing ring width, the quality factor in chamber, far-field divergence angle and coupling efficiency all can change thereupon, and the ring width when these three amounts reach optimum and grating depth are exactly selected ring width and grating depth.The two fixing one, can obtain the optimal value of another one.Consult shown in Fig. 1, Fig. 2, the present invention is the annulus micro-cavity laser that a kind of orientation exports, and it comprises: annular microcavity resonator, and on the internal partial wall of described annulus microcavity resonator, vertical distribution has optical grating construction; Wherein, the angle cycle size of described optical grating construction is determined according to the angle quantum number of directed output mode, the raster count of described optical grating construction and the angle quantum number of directed output mode.
In the present invention, described optical grating construction is distributed on the internal partial wall of described annulus microcavity resonator, and light is gone out from the optical grating diffraction being distributed in described internal partial wall and formed directed output.
In addition, the angle cycle size of described optical grating construction and the angle quantum number of directed output mode meet following formula:
α＝360/(v+n)
The raster count of described optical grating construction and the angle quantum number of directed output mode meet following formula:
N
g＝(v+n)/m
Wherein, α is the angle cycle size of described optical grating construction, N
gfor the angle cycle size of optical grating construction, v is the angle quantum number of directed output mode, and the span of n is between 1-10, and the span of m is between 3-9.
Described annular microcavity resonator and described optical grating construction are formed by planar waveguide etching, and described planar waveguide comprises upper limiting layer, active area and lower limit layer; When on described planar waveguide, etching forms described annular microcavity resonator and described optical grating construction, the perimeter of described annular microcavity resonator and described optical grating construction is etched into lower limit layer or substrate.
Particularly, as illustrated in fig. 1 and 2, on a substrate 1, a part is resonant cavity 21, and another part is the grating 22 be distributed on resonant cavity inwall;
This resonant cavity 21 makes on substrate 1;
This optical grating construction 22 makes on substrate 1 and is connected with the inwall of resonant cavity 21;
Wherein resonant cavity 21 is circular column structure on the direction perpendicular to substrate 1, and this resonant cavity 21 comprises: a lower limit layer 211, and this lower limit layer 211 is connected with substrate 1; One active area 212, this active area 212 is prepared on lower limit layer 211, its shape identical with lower limit layer 211 (Fig. 2).
Wherein optical grating construction 22 be positioned at resonant cavity 21 inwall on and be connected with resonant cavity, this optical grating construction 22 has identical structure and material with resonant cavity 21.
Resonant cavity is the slab waveguide structures be made up of lower limit layer 211, active area 212 and upper limiting layer 213, and the thickness of each layer does not limit, and can regulate as required in actual process.The surrounding of resonant cavity 21 and optical grating construction 22 is low-index material (comprising air).Resonant cavity 21 is circular column structure on the direction perpendicular to substrate 1, and the radius of resonant cavity 21 is several times to thousands of times of excitation wavelength.Its material can be known various IV group semi-conducting material and its compound and the semi-conducting material such as III-V, II-VI group compound, also can be the operation material of organic semiconducting materials and other solid state lasers.Resonant cavity active area 212 can be the various structures such as semi-conducting material, quantum well, quantum wire, quantum dot, quanta cascade.Substrate 1 in an embodiment, lower limit layer 211 and upper limiting layer 213 are not necessarily necessary, as long as annular resonant cavity 21 can be made to realize gain overcome loss.
In concrete preparation technology, epitaxial wafer can be eroded to lower limit layer or substrate by the method such as dry etching or wet chemical etching technique by resonant cavity 21, and non-corrosion area is resonant cavity 21 and optical grating construction 22.The inwall of resonant cavity 21 has optical grating construction 22 be connected, optical grating construction 22 can resonant cavity 21 be made simultaneously, and they have identical materials and structures, as shown in Figure 2.The screen periods number of optical grating construction 22 is selected according to the angle number of vectors will chosen as directed output mode.The degree of depth of optical grating construction 22 and the ring width of resonant cavity 21, can coordinate to select, and penetrates the higher quality factor of mould acquisition to make to swash.
Laser resonant cavity 21 in the present invention can realize sharp penetrating by optical pumping mode or electrical pumping mode (can make electrode below substrate 1 He above upper limiting layer 213) as driving source.
The ring width of the laser resonant cavity 21 in the present invention and the degree of depth of optical grating construction 22 coordinate selection in conjunction with the outer radius of resonant cavity 21, to realize less far-field divergence angle, and strengthen the coupling efficiency that light field exports in far-field divergence angle.The projection of often pair of grating of optical grating construction 22 is identical with the width shared by groove.
Fig. 3 is transverse electric pattern TE in utilize 2 dimension Finite Element Methods (finite element method, FEM) to carry out annulus microcavity that numerical computations obtains
73,1near-field field strength distribution map.The outer radius of annular resonant cavity is 6 μm, and annular width is 1 μm, and the degree of depth of inwall grating is 0.4 μm, and the grating angle cycle is α=360/78, raster count N
g=23, the refractive index of annulus resonant cavity is 3.2, and outside chamber, refractive index is 1.As shown in 3 figure, the WG pattern in chamber is become by the inwall grating coupling partly distributed the distortion WGM pattern that has low order azimuth component, and forms directed Laser output in grating distribution side.
Fig. 4 is by mould field changing method, from TE
73,1its far-field distribution figure that the near field distribution figure of pattern calculates.As shown in 4 figure, TE
73,1the far field of pattern only has a main peak, and far field angle is less only has 20.6 °, and the peak, side on main peak side is very little, therefore TE
71,1pattern achieves well directed output.
Fig. 5 is TE in utilize two-dimentional FEM method to carry out annulus microcavity that numerical computations obtains
71,1in the far-field emission angle of pattern and the angle of divergence, the coupling efficiency of light is with the change curve of grating depth.As shown in Figure 5, the outer radius of annular resonant cavity is 6 μm, and annular width is 1 μm, and the etching depth of inwall grating is 0.4 μm, and the grating angle cycle is α=360/78, raster count N
g=19, the refractive index of annulus resonant cavity is 3.2, and outside chamber, refractive index is 1; TE
71,1the far-field divergence angle of pattern along with the change kept stable of grating depth constant.And the efficiency that in far-field divergence angle, optical coupling exports also tends towards stability along with the increase of grating depth value 40%.TE
71,1the directional light that pattern achieves low-angle height coupling efficiency exports.The etching depth of described optical grating construction is determined according to the radius of described annular microcavity resonator and the difference of ring width.The etching depth of grating is between 0.02 μm-1.2 μm, and annular width is between 0.6 μm-1.5 μm.
Fig. 6 is TE in utilize two-dimentional FEM method to carry out annulus microcavity that numerical computations obtains
71,1in the far-field emission angle of pattern and the angle of divergence, the coupling efficiency of light is with the change curve of annular width.As shown in Figure 6, the outer radius of annular resonant cavity is 6 μm, and annular width is 1 μm, and the etching depth of inwall grating is 0.4 μm, and the grating angle cycle is α=360/78, raster count N
g=19, the refractive index of annulus resonant cavity is 3.2, and outside chamber, refractive index is 1, TE
71,1the far-field divergence angle of pattern has very little variation up and down substantially along with the change of grating depth near 11 degree.And the efficiency that in far-field divergence angle, optical coupling exports is also along with change rectilinear oscillation between 20%-40% of grating depth.Select suitable ring width just can make TE
71,1the directional light that pattern realizes low-angle height coupling efficiency exports.Particularly, after this parameter of the fixed grating degree of depth, change ring width, far-field divergence angle and the coupling efficiency of Laser output are investigated in simulation, the parameter of choosing when the ring width that the while of making far-field divergence angle little, coupling efficiency is high is just prepared as reagent.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. the directed annulus micro-cavity laser exported, is characterized in that, comprising: annular microcavity resonator, and on the internal partial wall of described annular resonant cavity, etching is distributed with optical grating construction.
2. the annulus micro-cavity laser of a kind of orientation output according to claim 1, wherein, the angle cycle size of described optical grating construction is determined according to the angle quantum number of directed output mode.
3. the annulus micro-cavity laser of a kind of orientation output according to claim 2, wherein, the angle cycle size of described optical grating construction and the angle quantum number of described directed output mode meet following formula:
α＝360/(v+n)；
Wherein, wherein, α is the angle cycle size of described optical grating construction, and v is the angle quantum number of directed output mode, and the span of n is between 1-10.
4. a kind of directed output annulus micro-cavity laser according to claim 1, wherein, the raster count of described optical grating construction is determined according to the angle quantum number of directed output mode.
5. the annulus micro-cavity laser of a kind of orientation output according to claim 4, wherein, wherein, the raster count of described optical grating construction and the angle quantum number of described directed output mode meet following formula:
N
g＝(v+n)/m；
Wherein, N
gfor the angle cycle size of optical grating construction, v is the angle quantum number of directed output mode, and the span of n is between 1-10, and the span of m is between 3-9.
6. a kind of single mode emission annulus micro-cavity laser according to any one of claim 1-5, wherein, described optical grating construction vertical distribution is in described annulus microcavity resonator inwall.
7. a kind of single mode emission annulus micro-cavity laser according to any one of claim 1-5, wherein, described annular microcavity resonator has identical structure and material with described optical grating construction, and described annular microcavity resonator and described optical grating construction comprise upper limiting layer, active area and lower limit layer.
8. a kind of single mode emission annulus micro-cavity laser according to claim 1-5, wherein, the material of described annular microcavity resonator and optical grating construction comprises various IV races semi-conducting material and its compound and III-V, II-VI group compound, the operation material of organic semiconducting materials and other solid state lasers; The structure of the active area of described annular micro-ring resonant cavity comprises semiconductor bulk material structure, quantum well, quantum wire, quantum dot and quanta cascade structure.
9. the annulus micro-cavity laser of a kind of orientation output according to claim 1, wherein, the etching depth of described optical grating construction be the radius of described annular microcavity resonator and ring width fixing after, the etching depth of optical grating construction when making the quality factor of described annular microcavity resonator reach maximum.
10. the annulus micro-cavity laser of a kind of orientation output according to claim 1, wherein, the etching depth of described optical grating construction is between 0.02 μm-1.2 μm, and described annular microcavity resonator ring width is between 0.6 μm-1.5 μm.
The annulus micro-cavity laser that 11. a kind of orientations according to claim 1 export, wherein, the projection of often pair of grating of described optical grating construction is identical with the width shared by groove.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105591284A (en) * | 2016-01-18 | 2016-05-18 | 华中科技大学 | Grating-assisted micro-column-cavity surface emitting laser |
| CN108415125A (en) * | 2018-04-19 | 2018-08-17 | 哈尔滨工业大学深圳研究生院 | A kind of microcavity coupled system and preparation method thereof of high efficiency, low cost |
| CN112415651A (en) * | 2020-12-15 | 2021-02-26 | 清华大学 | Design and preparation method and system for radiation focusing of optical chip |
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| US7283707B1 (en) * | 2001-07-25 | 2007-10-16 | Oewaves, Inc. | Evanescently coupling light between waveguides and whispering-gallery mode optical resonators |
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| CN105591284A (en) * | 2016-01-18 | 2016-05-18 | 华中科技大学 | Grating-assisted micro-column-cavity surface emitting laser |
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| CN112415651A (en) * | 2020-12-15 | 2021-02-26 | 清华大学 | Design and preparation method and system for radiation focusing of optical chip |
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