CN104979427A - 一种用于晶体硅太阳电池的双层氮化硅薄膜的制备方法 - Google Patents

一种用于晶体硅太阳电池的双层氮化硅薄膜的制备方法 Download PDF

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CN104979427A
CN104979427A CN201510247786.1A CN201510247786A CN104979427A CN 104979427 A CN104979427 A CN 104979427A CN 201510247786 A CN201510247786 A CN 201510247786A CN 104979427 A CN104979427 A CN 104979427A
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施成军
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Abstract

本发明涉及一种用于晶体硅太阳电池的双层氮化硅薄膜的制备方法，它由两个具有不同折射率的氮化硅子层薄膜组成，并且在一次PECVD沉积过程中获得。本发明的优点在于：将常规的单层氮化硅薄膜改进为双层氮化硅薄膜，因为与硅片接触的第一子层(内层)比第二子层薄膜(外层)具有更高的折射率，所以增强了薄膜的减反射作用，提高了太阳电池的光电转换效率，具有较好的实用价值，硅烷和氨气的流量比影响薄膜折射率的主要因素，采用合理的硅烷和氨气的流量比，折射率较好。

Description

一种用于晶体硅太阳电池的双层氮化硅薄膜的制备方法
技术领域
    本发明涉及一种双层氮化硅薄膜的制备方法，具体涉及一种用于晶体硅太阳电池的双层氮化硅薄膜的制备方法。
背景技术
提高晶体硅太阳电池的转换效率的一种途径是降低硅片表面的反射率和增加表面钝化效果。工业化晶体硅太阳电池通常使用 PECVD 沉积氮化硅薄膜，所制备的氮化硅薄膜含有 Si、 N、 H 等三种元素，通常表示为 SiNx:H 薄膜，它既起到减反射的作用，也起到表面钝化的作用。
专利号为201110027670.9的发明专利中提到一种用于晶体硅太阳电池的双层氮化硅薄膜的制备方法，它由两个具有不同折射率的氮化硅子层薄膜组成，并且在一次PECVD沉积过程中获得，上述专利中的一种用于晶体硅太阳电池的双层氮化硅薄膜的制备方法，存在以下缺点：两个阶段中的硅烷和氨气流量比还达不到较理想状态。
发明内容
本发明要解决的技术问题是提供一种用于晶体硅太阳电池的双层氮化硅薄膜的制备方法，它用于晶体硅太阳电池时，比单层氮化硅薄膜具有更好的减反射效果和更好的表面钝化效率，可以提高太阳电池的光电转换效率，因此，具有较好的实用价值。
    为解决上述技术问题，本发明的技术方案为：一种用于晶体硅太阳电池的双层氮化硅薄膜的制备方法，其创新点在于：由两个具有不同折射率的氮化硅子层薄膜组成，并且在一次 PECVD 沉积过程中获得，其工艺流程如下：
第一步，对衬底硅片进行清洗，将抛光P型硅片经丙酮和乙醇加热清洗油污之后，用浓度约为5％的氢氟酸浸泡5分钟以去除表面的氧化物以及生成保护表面的氢键，此氢键在沉积时加热即断裂，对实验结果没有影响。使用去离子水冲洗硅片20遍以上；
第二步，将清洗完成的硅片放入PECVD设备的反应腔室中，将反应腔室加热到需要的反应温度并保持30min；
第三步，调节反应需要的时间、温度，衬底温度低于200℃时，氮化硅薄膜的本征应力较大，表现为张应力，不容易沉积薄膜；当衬底温度高于400℃时，氮化硅薄膜生长不均匀，容易龟裂，因此，需要选择合适的沉积温度以获得结构稳定的氮化硅薄膜；
第四步，通入反应气体NH3，调节流量计至适当参数；
第五步，开通500W射频功率源，将射频功率调节至实验需要的功率，调节匹配器将制备中的反射功率调至最低；
第六步，通入反应气体SiH4，调节流量计至适当参数，适当提高反应室压强，得到沉积。
进一步的，所述沉积过程分两个阶段进行，而且在两个阶段中分别采用两个不同的硅烷和氨气流量比。
进一步的，所述沉积过程分两个阶段进行，而且在两个阶段中采用3:4的硅烷和氨气流量比。
本发明的优点在于：
   （1）.将常规的单层氮化硅薄膜改进为双层氮化硅薄膜，因为与硅片接触的第一子层(内层)比第二子层薄膜(外层)具有更高的折射率，所以增强了薄膜的减反射作用，提高了太阳电池的光电转换效率，具有较好的实用价值；
（2）.硅烷和氨气的流量比影响薄膜折射率的主要因素，采用合理的硅烷和氨气的流量比，折射率较好。
具体实施方式
    实施例1
    一种用于晶体硅太阳电池的双层氮化硅薄膜由两个具有不同折射率的氮化硅子层薄膜组成，并且在一次 PECVD 沉积过程中获得。其工艺流程如下：
    第一步，对衬底硅片进行清洗，将抛光P型硅片经丙酮和乙醇加热清洗油污之后，用浓度约为5％的氢氟酸浸泡5分钟以去除表面的氧化物以及生成保护表面的氢键，此氢键在沉积时加热即断裂，对实验结果没有影响，使用去离子水冲洗硅片20遍以上；
    第二步，将清洗完成的硅片放入PECVD设备的反应腔室中，将反应腔室加热到需要的反应温度并保持30min；
第三步，调节反应需要的时间、温度，衬底温度低于200℃时，氮化硅薄膜的本征应力较大，表现为张应力，不容易沉积薄膜；当衬底温度高于400℃时，氮化硅薄膜生长不均匀，容易龟裂，因此，需要选择合适的沉积温度以获得结构稳定的氮化硅薄膜；
第四步，通入反应气体NH3，流速36ml/min，调节流量计至适当参数；
第五步，开通500W射频功率源，将射频功率调节至实验需要的功率，调节匹配器将制备中的反射功率调至最低；
第六步，通入反应气体SiH4，流速12ml/min，调节流量计至适当参数，适当提高反应室压强，得到沉积；
   本实施例中，步骤SiH4和NH3流量比为1:3，制得的双层氮化硅薄膜的折射率为1.65。
    实施例2
    本实施例在实施例1的基础上，改变SiH4和NH3流量比，将SiH4和NH3输入量比值设定为3:4，得到双层氮化硅薄膜的折射率为2。
    实施例3
    本实施例在实施例1的基础上，改变SiH4和NH3流量比，将SiH4和NH3输入量比值设定为1:1，得到双层氮化硅薄膜的折射率为1.85。
    由实施例1、实施例2和实施例3的结果表明，实施例2制得的双层氮化硅薄膜地折射率高，其效果最优。
    以上显示和描述了本发明的基本原理和主要特征。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (3)

1.一种用于晶体硅太阳电池的双层氮化硅薄膜的制备方法，其特征在于：它由两个具有不同折射率的氮化硅子层薄膜组成，并且在一次 PECVD 沉积过程中获得，其工艺流程如下：
    第一步，对衬底硅片进行清洗，将抛光P型硅片经丙酮和乙醇加热清洗油污之后，用浓度约为5％的氢氟酸浸泡5分钟以去除表面的氧化物以及生成保护表面的氢键，此氢键在沉积时加热即断裂，对实验结果没有影响；使用去离子水冲洗硅片20遍以上；
    第二步，将清洗完成的硅片放入PECVD设备的反应腔室中，将反应腔室加热到需要的反应温度并保持30min；
    第三步，调节反应需要的时间、温度，衬底温度低于200℃时，氮化硅薄膜的本征应力较大，表现为张应力，不容易沉积薄膜；当衬底温度高于400℃时，氮化硅薄膜生长不均匀，容易龟裂；因此，需要选择合适的沉积温度以获得结构稳定的氮化硅薄膜；
    第四步，通入反应气体NH3，调节流量计至适当参数；
    第五步，开通500W射频功率源，将射频功率调节至实验需要的功率，调节匹配器将制备中的反射功率调至最低；
    第六步，通入反应气体SiH4，调节流量计至适当参数，适当提高反应室压强，得到沉积。
2.根据权利要求1所述的一种用于晶体硅太阳电池的双层氮化硅薄膜的制备方法，其特征在于：所述沉积过程分两个阶段进行，而且在两个阶段中分别采用两个不同的硅烷和氨气流量比。
3.根据权利要求2所述的一种用于晶体硅太阳电池的双层氮化硅薄膜的制备方法，其特征在于：所述沉积过程分两个阶段进行，而且在两个阶段中采用3:4的硅烷和氨气流量比。
CN201510247786.1A 2015-05-15 2015-05-15 一种用于晶体硅太阳电池的双层氮化硅薄膜的制备方法 Pending CN104979427A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130185A (zh) * 2011-01-26 2011-07-20 欧贝黎新能源科技股份有限公司 一种用于晶体硅太阳电池的双层氮化硅薄膜及其制备方法
CN103413868A (zh) * 2013-08-26 2013-11-27 山东力诺太阳能电力股份有限公司 一种晶硅太阳能电池多层膜制备工艺
CN103579379A (zh) * 2013-11-08 2014-02-12 英利集团有限公司 晶硅太阳能电池及其制作方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130185A (zh) * 2011-01-26 2011-07-20 欧贝黎新能源科技股份有限公司 一种用于晶体硅太阳电池的双层氮化硅薄膜及其制备方法
CN103413868A (zh) * 2013-08-26 2013-11-27 山东力诺太阳能电力股份有限公司 一种晶硅太阳能电池多层膜制备工艺
CN103579379A (zh) * 2013-11-08 2014-02-12 英利集团有限公司 晶硅太阳能电池及其制作方法

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