CN104966706A - Integrated power control unit (PCU) - Google Patents
Integrated power control unit (PCU) Download PDFInfo
- Publication number
- CN104966706A CN104966706A CN201510423932.1A CN201510423932A CN104966706A CN 104966706 A CN104966706 A CN 104966706A CN 201510423932 A CN201510423932 A CN 201510423932A CN 104966706 A CN104966706 A CN 104966706A
- Authority
- CN
- China
- Prior art keywords
- cooler
- control unit
- cooling
- power control
- power semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000003990 capacitor Substances 0.000 claims abstract description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention provides an integrated power control unit (PCU), which comprises a transformer, a capacitor, an inverter, a buck-boost converter and a cooling mechanism, wherein the cooling mechanism is formed by a first cooler, a first insulated plate, a first cooling plate, a power semiconductor element, a second cooling plate, a second insulated plate and a second cooler connected in sequence; both the first cooler and the second cooler are formed by cooling paths and overlapped cooling plates; and the power semiconductor element is a silicon carbide power semiconductor element. The integrated power control unit has the above technical effects that through adopting the high-performance power semiconductor, current of more than 300A flows through each element; elements supporting large current are adopted, the number of elements is reduced to realize miniaturization, cooling is carried out through double-face cooling, and the performance of the PCU is improved.
Description
Technical field
The present invention relates to a kind of integrated power control unit (PCU), belong to technical field of semiconductors.
Background technology
Integrated power control unit (PCU) is for managing the electric current flowing to speed control motor from battery, and the energy regenerating that brake produces by it also sends battery storage back to.If adopt traditional silicon-based power electronic device, even if the ratio adjustment of heavy current and high pressure is well talked about, the heat distributed in the middle of this accounts for greatly 1/4th of vehicle electric energy loss.Except the energy loss in conductive process, the contactor that power electronics unit also will be stood and the energy loss caused.
Existing integrated power control unit (PCU) has the weak points such as efficiency is low, caloric value is large, switching speed is slow.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art part, a kind of integrated power control unit (PCU) is provided.
Integrated power control unit (PCU) of the present invention, comprise transformer, capacitor, inverter, type of voltage step-up/down converter and cooling body, described cooling body is made up of the first cooler be connected successively, the first insulation board, the first heating panel, power semiconductor, the second heating panel, the second insulation board and the second cooler, and the first described cooler and the second cooler are by cooling channel and overlapping coldplate composition.
Described power semiconductor is silicon carbide power semiconductor element.
Preferably,
Described heating panel is copper coin or copper alloy plate;
Described coldplate is that aluminium alloy is stamped to form.
Integrated power control unit (PCU) of the present invention, has following technique effect:
Integrated power control unit (PCU) is by adopting high performance power semiconductor, and each element flows through the electric current of more than 300A.Adopt the element supporting big current, reduce number of elements to realize miniaturization, dispelled the heat by two-sided cooling, improve the performance of PCU.
Embodiment
Integrated power control unit (PCU) of the present invention, comprise transformer, capacitor, inverter, type of voltage step-up/down converter and cooling body, described cooling body is made up of the first cooler be connected successively, the first insulation board, the first heating panel, power semiconductor, the second heating panel, the second insulation board and the second cooler, the first described cooler and the second cooler are by cooling channel and overlapping coldplate composition, and described power semiconductor is silicon carbide power semiconductor element.
Described heating panel is copper coin or copper alloy plate;
Described coldplate is that aluminium alloy is stamped to form.
Claims (3)
1. integrated power control unit, it is characterized in that, comprise transformer, capacitor, inverter, type of voltage step-up/down converter and cooling body, described cooling body is made up of the first cooler be connected successively, the first insulation board, the first heating panel, power semiconductor, the second heating panel, the second insulation board and the second cooler, the first described cooler and the second cooler are by cooling channel and overlapping coldplate composition, and described power semiconductor is silicon carbide power semiconductor element.
2. integrated power control unit according to claim 1, is characterized in that, described heating panel is copper coin or copper alloy plate.
3. integrated power control unit according to claim 1, is characterized in that, described coldplate is that aluminium alloy is stamped to form.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510423932.1A CN104966706A (en) | 2015-07-20 | 2015-07-20 | Integrated power control unit (PCU) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510423932.1A CN104966706A (en) | 2015-07-20 | 2015-07-20 | Integrated power control unit (PCU) |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104966706A true CN104966706A (en) | 2015-10-07 |
Family
ID=54220723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510423932.1A Pending CN104966706A (en) | 2015-07-20 | 2015-07-20 | Integrated power control unit (PCU) |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104966706A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109906020A (en) * | 2019-01-07 | 2019-06-18 | 深圳市环宇鼎鑫科技有限公司 | A kind of power module of battery management system |
US11923716B2 (en) | 2019-09-13 | 2024-03-05 | Milwaukee Electric Tool Corporation | Power converters with wide bandgap semiconductors |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101009253A (en) * | 2006-01-23 | 2007-08-01 | 丰田自动车株式会社 | Radiating fin and cooling device |
CN202196771U (en) * | 2011-08-22 | 2012-04-18 | 四川软测技术检测中心有限公司 | Novel two-side cooler used for electromobile semiconductor |
EP2685494A1 (en) * | 2011-03-10 | 2014-01-15 | Toyota Jidosha Kabushiki Kaisha | Cooler |
JP2014060304A (en) * | 2012-09-19 | 2014-04-03 | Toyota Motor Corp | Semiconductor unit |
-
2015
- 2015-07-20 CN CN201510423932.1A patent/CN104966706A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101009253A (en) * | 2006-01-23 | 2007-08-01 | 丰田自动车株式会社 | Radiating fin and cooling device |
EP2685494A1 (en) * | 2011-03-10 | 2014-01-15 | Toyota Jidosha Kabushiki Kaisha | Cooler |
CN202196771U (en) * | 2011-08-22 | 2012-04-18 | 四川软测技术检测中心有限公司 | Novel two-side cooler used for electromobile semiconductor |
JP2014060304A (en) * | 2012-09-19 | 2014-04-03 | Toyota Motor Corp | Semiconductor unit |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109906020A (en) * | 2019-01-07 | 2019-06-18 | 深圳市环宇鼎鑫科技有限公司 | A kind of power module of battery management system |
CN109906020B (en) * | 2019-01-07 | 2020-07-21 | 深圳市环宇鼎鑫科技有限公司 | Power module of battery management system |
US11923716B2 (en) | 2019-09-13 | 2024-03-05 | Milwaukee Electric Tool Corporation | Power converters with wide bandgap semiconductors |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: No. 99 Haian County, Jiangsu province 226600 Nantong City Libao Tonghai Road Applicant after: Nantong Mingnuo electric Polytron Technologies Inc Address before: No. 99 Haian County, Jiangsu province 226600 Nantong City Libao Tonghai Road Applicant before: Nantong Mingnuo Machinery Co., Ltd. |
|
COR | Change of bibliographic data | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151007 |