CN203826375U - Metal-Oxide-Semiconductor (MOS) tubes connected in parallel to realize a structure for controlling the opening and the closing of large current - Google Patents
Metal-Oxide-Semiconductor (MOS) tubes connected in parallel to realize a structure for controlling the opening and the closing of large current Download PDFInfo
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- CN203826375U CN203826375U CN201420257479.2U CN201420257479U CN203826375U CN 203826375 U CN203826375 U CN 203826375U CN 201420257479 U CN201420257479 U CN 201420257479U CN 203826375 U CN203826375 U CN 203826375U
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Abstract
The utility model relates to metal-Oxide-Semiconductor (MOS) tubes connected in parallel to realize a structure for controlling the opening and the closing of large current. The utility model comprises at least two MOS tubes, a MOS tube driving circuit board, two bus bars and an insulation mounting plate. All MOS tubes are free of drain pins. The gate pins of each MOS are firstly bended for 90 degrees before being connected with the welding plate of the MOS tube driving circuit board. The source pins of each MOS tube are fixedly connected with the first bus bar through a large current conductor. The drain base plate of each MOS tube is fixedly connected to the second bus bar. All the MOS tubes are in parallel connection. The first bus bar and the second bus bar are respectively mounted on the insulation mounting plate and both the two bus bars are provided with terminals to connect external circuits. The MOS tubes of the utility model are in parallel connection to control large current, and for the introduction of a large current conductor and bus bars, the MOS tubes of the utility model can provide more stable and more valued performances. Beyond that, the utility model is also easy to mount and operate.
Description
Technical field
The utility model relates to semiconductor applications, is specifically related to metal-oxide-semiconductor parallel connection and realizes the structure that high-current switch is controlled.
Background technology
As everyone knows, the advantage of metal-oxide-semiconductor is that voltage drives type semiconductor, it opens, it is very little to turn-off current sinking, and conducting internal resistance Rds (on) is quite low, much all below 10 milliohms, some has been accomplished below 1 milliohm, so select metal-oxide-semiconductor to carry out switch control, has been good scheme.
Along with the progress gradually of semicon industry, the rated operational current of a lot of power MOS pipes can reach 100 amperes, does not also have at present producer can accomplish that single metal-oxide-semiconductor can reach rated operational current 200A.But often there will be in actual applications 200A, the situation of the large electric current of 500A even, like this, single metal-oxide-semiconductor can not meet so large current requirements far away.For this reason, conventionally adopt following several modes to deal with:
(1) adopt large contactor.This mode price is high especially, and has switch life limited;
(2) adopt the IGBT (insulated gate bipolar transistor) of large electric current.This mode is generated heat quite serious, needs the heat radiation of special fan, and system effectiveness is low.
(3) many metal-oxide-semiconductors application that is together in parallel, so very large electric current is shared by many metal-oxide-semiconductors, and the electric current that single metal-oxide-semiconductor is born is just smaller, has guaranteed that device works with security and stability.But, in this scheme, the printed substrate of welding metal-oxide-semiconductor to cover copper very thin, can not logical super-high-current, even tining improves current capacity on PCB, the bad control of production technology, cost is also very high, and electric current is difficult to reach more than 200 amperes.
Utility model content
Technical problem to be solved in the utility model be how to design a cost performance high, simple metal-oxide-semiconductor parallel connection be installed realize the problem that high-current switch is controlled.
In order to solve the problems of the technologies described above, the technical scheme that the utility model adopts is to provide a kind of metal-oxide-semiconductor parallel connection and realizes the structure that high-current switch is controlled, this structure comprises two above metal-oxide-semiconductors and a metal-oxide-semiconductor drive circuit board, two bus-bars and a fitting insulating panels, and each metal-oxide-semiconductor cuts drain lead; Each metal-oxide-semiconductor gate lead bending 90 degree, described gate lead is connected with described metal-oxide-semiconductor drive circuit board pad; Each metal-oxide-semiconductor source lead can be fixedly connected on the first bus-bar by high-current conductor by one; The drain electrode base plate of each metal-oxide-semiconductor is fixedly connected on the second bus-bar, between described each metal-oxide-semiconductor, forms parallel-connection structure; Described the first bus-bar and the second bus-bar are fixedly mounted on respectively on an insulated mounting plate; Described the first bus-bar, the second bus-bar are provided with the terminal being connected with external circuit.
In said structure, described the first bus-bar and the second bus-bar are strip.
In said structure, described can be copper lug by high-current conductor.
The utility model has been realized high-current switch control by metal-oxide-semiconductor parallel connection, and by one can by high-current conductor solved each metal-oxide-semiconductor gate lead cannot with the fine problem being connected of the first bus-bar, select copper lug replace this conductor make gate lead and the first bus-bar attended operation more simple and convenient, be convenient to maintenance; The introducing of bus-bar is the installation of more convenient external circuit not only, but also has heat sinking function, has served as fin, does not need additionally to add fin, has reduced cost, has improved cost performance of the present utility model.
Accompanying drawing explanation
Fig. 1 is mounting structure figure of the present utility model.
Embodiment
Below in conjunction with Figure of description and specific embodiment, the utility model is described in detail.
As shown in Figure 1, the structure that the metal-oxide-semiconductor parallel connection that the utility model provides realizes high-current switch control comprises two above metal-oxide-semiconductors 1 and a metal-oxide-semiconductor drive circuit board 2, two bus-bars and an insulated mounting plate 5, each metal-oxide-semiconductor cuts drain lead 6 by preforming process, gate lead 7 bending 90 degree, it is the outside bending gate lead 7 of vertical paper, gate lead 7 is connected with the pad 10 of metal-oxide-semiconductor drive circuit board 2, to drive each metal-oxide-semiconductor work, source lead 8 preforming of each metal-oxide-semiconductor are connected with the first bus-bar 3 after connecting a conductor that can lead to super-high-current, the drain electrode base plate 9 of each metal-oxide-semiconductor is screwed and is connected with the second bus-bar 4, between each metal-oxide-semiconductor, form parallel-connection structure, the first bus-bar 3 and the second bus-bar 4 are screwed respectively and are arranged on insulated mounting plate 5, and insulated mounting plate 5 is insulation, the temperature-resistant materials such as cabinet, fiber board, plastic plate, two bus-bars are provided with terminal, the terminal 12 of the first bus-bar with the terminal 11 of the second bus-bar for being connected external circuit.
In the utility model, metal-oxide-semiconductor drive circuit board 2 can be used one side PCB, two-sided PCB, aluminium base, even copper-clad plate, covering aluminum plate; By a conductor that can lead to super-high-current, the gate lead of each metal-oxide-semiconductor is drawn, be more conducive to being connected of each metal-oxide-semiconductor and the first bus-bar, the gate lead that has solved each metal-oxide-semiconductor cannot be with the problem of the fine connection of the first bus-bar; The conductor that can lead to super-high-current can choice for use copper lug 13, and copper lug 13 only need be screwed with the first bus-bar junction, makes with the first bus-bar attended operation simplyr, also maintains easily maintenance simultaneously.
In the utility model, the use of bus-bar not only can conveniently be installed and be connected with external circuit, and metal-oxide-semiconductor number of the present utility model is installed according to the actual requirements, shape, installation control also can reasonably be adjusted according to real system structure, bus-bar has also served as fin simultaneously, do not need additionally to increase again fin, reduce costs, improved the cost performance of this utility model.
According to 300 amperes of electric discharges of large electric current of specific embodiment control battery, the thermal resistance producing in the utility model is specifically described below.
Control in actual applications 300 amperes of electric discharges of large electric current of battery, can use 20 conducting internal resistances is 4 milliohms, rated current is that the metal-oxide-semiconductor of 100 amperes composes in parallel the structure that metal-oxide-semiconductor parallel connection realizes large electric current, during metal-oxide-semiconductor conducting, what heating power (P) equaled electric current (I) square is multiplied by resistance (R), specific formula for calculation is P=I * I * R=300 * 300 * (4 * 0.001/20)=18 watt, using two total thermal resistances of bus-bar is 1 degree/watt (℃/W), consider other connection conducting resistance, can guarantee that temperature rise is no more than 40 degree.
More than by preferred and description that specific embodiment is detailed the utility model; but those skilled in the art should be understood that; the utility model is not limited to the above embodiment; all within basic principle of the present utility model; any modification of doing, combine and be equal to replacement etc., within being all included in protection range of the present utility model.
Claims (3)
- The 1.MOS pipe structure that realizes high-current switch control in parallel, comprises two above metal-oxide-semiconductors and a metal-oxide-semiconductor drive circuit board, it is characterized in that, also comprises two bus-bars and an insulated mounting plate; Each metal-oxide-semiconductor cuts drain lead; Gate lead bending 90 degree of each metal-oxide-semiconductor, described gate lead is connected with described metal-oxide-semiconductor drive circuit board pad; Each metal-oxide-semiconductor source lead can be fixedly connected on the first bus-bar by high-current conductor by one; The drain electrode base plate of each metal-oxide-semiconductor is fixedly connected on the second bus-bar, between described each metal-oxide-semiconductor, forms parallel-connection structure; Described the first bus-bar and the second bus-bar are fixedly mounted on respectively on described insulated mounting plate; Described the first bus-bar, the second bus-bar are provided with the terminal being connected with external circuit.
- 2. metal-oxide-semiconductor parallel connection as claimed in claim 1 realizes the structure that high-current switch is controlled, and it is characterized in that, described the first bus-bar and the second bus-bar are strip.
- 3. metal-oxide-semiconductor parallel connection as claimed in claim 1 realizes the structure that high-current switch is controlled, and it is characterized in that, described can be copper lug by high-current conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420257479.2U CN203826375U (en) | 2014-05-20 | 2014-05-20 | Metal-Oxide-Semiconductor (MOS) tubes connected in parallel to realize a structure for controlling the opening and the closing of large current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420257479.2U CN203826375U (en) | 2014-05-20 | 2014-05-20 | Metal-Oxide-Semiconductor (MOS) tubes connected in parallel to realize a structure for controlling the opening and the closing of large current |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203826375U true CN203826375U (en) | 2014-09-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420257479.2U Expired - Fee Related CN203826375U (en) | 2014-05-20 | 2014-05-20 | Metal-Oxide-Semiconductor (MOS) tubes connected in parallel to realize a structure for controlling the opening and the closing of large current |
Country Status (1)
| Country | Link |
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| CN (1) | CN203826375U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3250011A1 (en) * | 2016-05-25 | 2017-11-29 | Delphi International Operations Luxembourg S.à r.l. | Power commutation module |
| CN109088551A (en) * | 2018-10-11 | 2018-12-25 | 浙江动新能源动力科技股份有限公司 | A kind of board structure of circuit of super-high-current |
| CN110337194A (en) * | 2019-07-25 | 2019-10-15 | 苏州华之杰电讯股份有限公司 | The connection method and connection structure of double metal-oxide-semiconductors and PCBA board in parallel |
-
2014
- 2014-05-20 CN CN201420257479.2U patent/CN203826375U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3250011A1 (en) * | 2016-05-25 | 2017-11-29 | Delphi International Operations Luxembourg S.à r.l. | Power commutation module |
| FR3052013A1 (en) * | 2016-05-25 | 2017-12-01 | Delphi Int Operations Luxembourg Sarl | POWER SWITCHING MODULE |
| CN107454743A (en) * | 2016-05-25 | 2017-12-08 | 德尔福国际业务卢森堡公司 | Power communication module |
| US10177085B2 (en) | 2016-05-25 | 2019-01-08 | Aptiv Technologies Limited | Power commutation module |
| CN107454743B (en) * | 2016-05-25 | 2019-11-22 | 德尔福国际业务卢森堡公司 | Power communication module |
| CN109088551A (en) * | 2018-10-11 | 2018-12-25 | 浙江动新能源动力科技股份有限公司 | A kind of board structure of circuit of super-high-current |
| CN110337194A (en) * | 2019-07-25 | 2019-10-15 | 苏州华之杰电讯股份有限公司 | The connection method and connection structure of double metal-oxide-semiconductors and PCBA board in parallel |
| CN110337194B (en) * | 2019-07-25 | 2024-02-13 | 苏州华之杰电讯股份有限公司 | Connecting structure of parallel double MOS (Metal oxide semiconductor) tubes and PCBA (printed circuit board assembly) |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160325 Address after: 100000, Beijing, Changping District science and Technology Park, super Road, No. 3, building 2140, room 9 Patentee after: CSIC Yuanzhou (Beijing) Science & Technology Co., Ltd. Address before: 102000, room 2359, block B, building 9, building No. 3, front road, Changping District science and Technology Park, Beijing Patentee before: BEIJING HAITE YUANZHOU NEW ENERGY TECHNOLOGY CO., LTD. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140910 Termination date: 20190520 |