CN104900670B - A kind of optical detector based on bismuth copper selenolite thermal electric film transverse direction pyroelectric effect - Google Patents
A kind of optical detector based on bismuth copper selenolite thermal electric film transverse direction pyroelectric effect Download PDFInfo
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- CN104900670B CN104900670B CN201510262247.5A CN201510262247A CN104900670B CN 104900670 B CN104900670 B CN 104900670B CN 201510262247 A CN201510262247 A CN 201510262247A CN 104900670 B CN104900670 B CN 104900670B
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- QAAXRTPGRLVPFH-UHFFFAOYSA-N [Bi].[Cu] Chemical compound [Bi].[Cu] QAAXRTPGRLVPFH-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 230000003287 optical effect Effects 0.000 title claims abstract description 26
- 230000000694 effects Effects 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 25
- 238000004549 pulsed laser deposition Methods 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 239000000919 ceramic Substances 0.000 claims description 15
- 229910002903 BiCuSeO Inorganic materials 0.000 claims description 12
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 208000002925 dental caries Diseases 0.000 claims description 10
- 229910052797 bismuth Inorganic materials 0.000 claims description 8
- 229910052774 Proactinium Inorganic materials 0.000 claims description 6
- 239000003708 ampul Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000003746 solid phase reaction Methods 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000005303 weighing Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910002244 LaAlO3 Inorganic materials 0.000 claims description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 54
- 239000013078 crystal Substances 0.000 description 12
- 239000011669 selenium Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- BOQDCUQEMSEYOO-UHFFFAOYSA-N [Se].[Bi].[Cu] Chemical compound [Se].[Bi].[Cu] BOQDCUQEMSEYOO-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
Abstract
A kind of optical detector based on bismuth copper selenolite thermal electric film transverse direction pyroelectric effect, including lateral thermoelectric element, two symmetrical metal electrodes are set as voltage signal output end in lateral thermoelectric element upper surface, lateral thermoelectric element voltage signal output end is connected with voltmeter input terminal with contact conductor, it is characterised in that：The lateral thermoelectric element includes oxide monocrystal substrate and c-axis tilts the bismuth copper selenolite film of growth on oxide monocrystal substrate, and the metal electrode is arranged in the upper surface of bismuth copper selenolite film.The optical detector based on bismuth copper selenolite film transverse direction pyroelectric effect of the present invention need not freeze, and response wave band is wide, and detectivity is high, can realize light and heat simultaneously while detect.
Description
Technical field
The invention belongs to thin-film photodetector technical fields, and in particular to one kind is laterally hot based on bismuth copper selenolite thermal electric film
The optical detector of electrical effect.
Background technology
When light beam, which is irradiated to c-axis, to be tilted on the film surface of growth, film surface layer is after absorbing light radiation, immediately
A temperature difference is set up in film upper and lower surface, it, can be thin if there are anisotropy for the Seebeck coefficient of the thin-film material
Film surface detects an open circuit voltage signal perpendicular with the temperature difference, this effect is referred to as the lateral thermoelectricity effect of photoinduction
It answers.The optical detector prepared based on the design of this effect is horizontal thermoelectric optical detector, and the output voltage amplitude of detector can be with
It is indicated with following formula：
L and d is that light is radiated at the length of film surface and the thickness of sample respectively in formula；θ is the inclined angle of film c-axis
Degree, the i.e. angle in film c-axis direction and thin film planar normal；Δ S=Sab-ScIt is the faces film ab and the directions c Seebeck coefficient
Difference；Δ Tz is the temperature difference that film surface absorbs that lower surface generates on it after light radiation, conductivityσ and the thermal conductivity of it and film
Rate κ is related.It is irradiated if it is pulsed light, the temperature difference of the bigger generation of conductivity of material is bigger.It is irradiated if it is continuous light, material
The conductivity of material is bigger or the temperature difference of the smaller generation of thermal conductivity is bigger.
Existing horizontal thermoelectric optical detector detectivity is low, needs to study a kind of optical detection different from current material
Device, to realize that optical detector need not freeze, response wave band is wide, and detectivity is high, can realize light and heat simultaneously while detect
Effect.
Invention content
BiCuSeO is a kind of p-type oxide thermoelectric material haveing excellent performance, and the Seebeck coefficient of the material is with each to different
Property and there is extremely low thermal conductivity, be based on this, the present invention provides a kind of BiCuSeO films tilting growth using c-axis are lateral
Optical detector prepared by pyroelectric effect, this optical detector need not freeze, and response wave band is wide, and detectivity is high, can be simultaneously
Realize that light and heat detects simultaneously.
The present invention be realize its purpose the technical solution adopted is that：
A kind of optical detector based on bismuth copper selenolite thermal electric film transverse direction pyroelectric effect, including lateral thermoelectric element, in cross
Thermoelectric member top surface is arranged two symmetrical metal electrodes 4 and is used as voltage signal output end, will be laterally hot with contact conductor 5
Electric device voltage signal output end is connected with voltmeter input terminal, and the lateral thermoelectric element includes oxide monocrystal substrate
1 and on oxide monocrystal substrate 1 c-axis tilt growth bismuth copper selenolite film 2, the metal electrode 4 be arranged in bismuth copper selenium
The upper surface of oxygen film 2.
The oxide monocrystal substrate 1 is that commercial c-axis chamfers LaAlO3Monocrystalline, SrTiO3Monocrystalline, mis-cut angle are 0 °
45 ° of ＜ α ＜.
The c-axis tilts the mis-cut angle at the angle of inclination and oxide monocrystal substrate 1 of the bismuth copper selenolite film 2 of growth
It is identical.
The film thickness that the c-axis tilts the bismuth copper selenolite film 2 of growth is 50nm-500nm.
The bismuth copper selenolite film 2 that the c-axis tilts growth etches bismuth copper selenolite polycrystalline ceramics target system by pulse laser
It is standby to form, specially：Bismuth copper selenolite polycrystalline ceramics target is put into PLD cavitys, is obtained by pulsed laser deposition technique
C-axis tilts the bismuth copper selenolite film 2 of growth on oxide monocrystal substrate 1.
The bismuth copper selenolite polycrystalline ceramics target preparation process includes：Ratio is measured by the atomic molar of chemical formula BiCuSeO
Weigh Bi2O3, simple substance Cu, Bi and Se, carry out being mixed to get mixed material, mixed material ground into 24-48h in ball mill, will
It is 2-5mm, the disk of a diameter of 20-30mm, by above-mentioned disk first with vacuum sealing tube skill that material after grinding, which is pressed into thickness,
Disk is encapsulated in quartz ampoule and is then sintered by high-temperature solid phase reaction method by art, obtains required bismuth copper selenolite polycrystalline pottery
Porcelain target.
The condition of the pulsed laser deposition is：Laser frequency 3-5HZ, laser energy density 1-1.5mJ/cm2, background
Vacuum 10-4-10-8Pa, Ar Pressure 0.01-1Pa, 300-400 DEG C of base reservoir temperature, substrate and target distance 50-55mm.
After the c-axis tilts the bismuth copper selenolite film 2 grown by pulsed laser deposition, film natural cooling drop
It warms to room temperature, control pressure is 10 when cooling-3-10-4Pa。
The metal electrode 4 is round, a diameter of 1-1.5mm, and the spacing between electrode is 3-15mm, and electrode material is
Pt metal, Au, Ag, Al, In.
The contact conductor 5 selects the enameled wire of Au, Ag or Cu, a diameter of 0.1-0.2mm.
The beneficial effects of the invention are as follows：The optical detector based on bismuth copper selenolite film transverse direction pyroelectric effect of the present invention is not required to
Freeze, response wave band is wide, and detectivity is high, can realize light and heat simultaneously while detect.
The present invention has finally summed up mis-cut angle control by long-term creative research, in conjunction with formula principle in 0 ° of ＜
45 ° of α ＜, just will produce lateral pyroelectric effect only in the film for having mis-cut angle, and film be along substrate epitaxial growth,
Mis-cut angle, which crosses conference, influences the growth of film, and it is that 0 ° of ＜ α ＜, 45 ° of this ranges are suitble to the present invention strictly to control mis-cut angle
The growth of film.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of the optical detector based on bismuth copper selenolite film transverse direction pyroelectric effect of the present invention.
Fig. 2 is the output electricity of the horizontal thermoelectric optical detector of BiCuSeO films under the irradiation of 308nm pulsed lights of embodiment 1
Pressure-time response curve.
Fig. 3 is the output electricity of the horizontal thermoelectric optical detector of BiCuSeO films under the irradiation of 308nm pulsed lights of embodiment 2
Pressure-time response curve.
Fig. 4 is the horizontal thermoelectric optical detector of the BiCuSeO films under the continuous visible laser irradiations of 532nm of embodiment 3
Output voltage-time response curve.
Fig. 5 is the horizontal thermoelectric optical detector of the BiCuSeO films under the continuous visible laser irradiations of 980nm of embodiment 4
Output voltage-time response curve.
In figure, 1 is oxide monocrystal substrate, and 2 be bismuth copper selenolite film, and 3 be detection light beam, and 4 be metal electrode, and 5 be gold
Belong to conducting wire, 6 be voltmeter.
Specific implementation mode
Embodiment 1
1, lateral thermoelectric element is using the LaAlO for chamferring 3 ° in c-axis3Single crystal substrates prepare a layer thickness be 110nm along c-axis
The bismuth copper selenolite film of growth is tilted, angle of inclination is 3 °.
Specifically preparation process is：By the atomic molar metering of chemical formula BiCuSeO than weighing Bi2O3, simple substance Cu, Bi and Se,
It carries out being mixed to get mixed material, mixed material is ground into 30h in ball mill, the material after grinding, which is pressed into thickness, is
Disk is encapsulated in quartz ampoule and then is passed through first with vacuum sealing tube technology by 3mm, the disk of a diameter of 25mm by above-mentioned disk
High-temperature solid phase reaction method is sintered, and obtains required bismuth copper selenolite polycrystalline ceramics target.The bismuth copper selenolite polycrystalline ceramics that will be obtained
Target is put into PLD cavitys, and 3 ° of LaAlO is chamfer in c-axis by pulsed laser deposition technique3C-axis is grown in single crystal substrates
The bismuth copper selenolite base oxide film of orientation；After film deposits, the pressure of control PLD cavitys is 10-3-10-4Pa is natural
It cools to room temperature, obtains chamferring 3 ° of LaAlO in c-axis3The bismuth copper selenolite film of single crystal substrates upper edge c-axis oriented growth.
In above-mentioned preparation process, sedimentary condition is：Laser frequency 3-5HZ, laser energy density 1-1.5mJ/cm2, background
Vacuum 10-4-10-8Pa, Ar Pressure 0.01-1Pa, 300-400 DEG C of base reservoir temperature, substrate and target distance 50-55mm.
2, In electrodes, electrode diameter 1mm, electrode spacing are plated above-mentioned lateral thermoelectric element upper surface is symmetrical
For 8mm.
3, the copper conductor of two a diameter of 0.1mm is connected on two In electrodes and is used as contact conductor, two copper
Conducting wire is connected as output end with voltmeter input terminal, and 1 megohm of shelves is selected in voltmeter input impedance.
4, it uses wavelength to irradiate detector surface center for the pulsed light of 308nm, output voltage is recorded with voltmeter
Signal draws detector output voltage-time response curve, as shown in Figure 2.
As shown in Figure 2, when the pulsed light energy being radiated on film is 5mJ, the amplitude of output voltage signal is
2.25V, detectivity are up to 450mV/mJ.
Embodiment 2
1, lateral thermoelectric element is using the LaAlO for chamferring 5 ° in c-axis3Single crystal substrates prepare a layer thickness be 110nm along c-axis
The bismuth copper selenolite film of growth is tilted, angle of inclination is 5 °.
Specifically preparation process is：By the atomic molar metering of chemical formula BiCuSeO than weighing Bi2O3, simple substance Cu, Bi and Se,
It carries out being mixed to get mixed material, mixed material is ground into 30h in ball mill, the material after grinding, which is pressed into thickness, is
Disk is encapsulated in quartz ampoule and then is passed through first with vacuum sealing tube technology by 3mm, the disk of a diameter of 25mm by above-mentioned disk
High-temperature solid phase reaction method is sintered, and obtains required bismuth copper selenolite polycrystalline ceramics target.The bismuth copper selenolite polycrystalline ceramics that will be obtained
Target is put into PLD cavitys, and 5 ° of LaAlO is chamfer in c-axis by pulsed laser deposition technique3C-axis is grown in single crystal substrates
The bismuth copper selenolite base oxide film of orientation；After film deposits, the pressure of control PLD cavitys is 10-3-10-4Pa is natural
It cools to room temperature, obtains chamferring 5 ° of LaAlO in c-axis3The bismuth copper selenolite film of single crystal substrates upper edge c-axis oriented growth.
In above-mentioned preparation process, sedimentary condition is：Laser frequency 3-5HZ, laser energy density 1-1.5mJ/cm2, background
Vacuum 10-4-10-8Pa, Ar Pressure 0.01-1Pa, 300-400 DEG C of base reservoir temperature, substrate and target distance 50-55mm.
2, In electrodes, electrode diameter 1mm, electrode spacing are plated above-mentioned lateral thermoelectric element upper surface is symmetrical
For 8mm.
3, the copper conductor of two a diameter of 0.1mm is connected on two In electrodes and is used as contact conductor, two copper
Conducting wire is connected as output end with voltmeter input terminal, and 1 megohm of shelves is selected in voltmeter input impedance.
4, it uses wavelength to irradiate detector surface center for the pulsed light of 308nm, output voltage is recorded with voltmeter
Signal draws detector output voltage-time response curve, as shown in Figure 3.
From the figure 3, it may be seen that when the pulsed light energy being radiated on film is 5mJ, the amplitude of output voltage signal is
5.85V, detectivity are up to 1170mV/mJ.
Embodiment 3
1, lateral thermoelectric element is using the LaAlO for chamferring 10 ° in c-axis3Single crystal substrates prepare a layer thickness be 110nm along c
Axis tilts the bismuth copper selenolite film of growth, and angle of inclination is 10 °.
Specifically preparation process is：By the atomic molar metering of chemical formula BiCuSeO than weighing Bi2O3, simple substance Cu, Bi and Se,
It carries out being mixed to get mixed material, mixed material is ground into 30h in ball mill, the material after grinding, which is pressed into thickness, is
Disk is encapsulated in quartz ampoule and then is passed through first with vacuum sealing tube technology by 3mm, the disk of a diameter of 25mm by above-mentioned disk
High-temperature solid phase reaction method is sintered, and obtains required bismuth copper selenolite polycrystalline ceramics target.The bismuth copper selenolite polycrystalline ceramics that will be obtained
Target is put into PLD cavitys, and 10 ° of LaAlO is chamfer in c-axis by pulsed laser deposition technique3C-axis is grown in single crystal substrates
The bismuth copper selenolite base oxide film of orientation；After film deposits, the pressure of control PLD cavitys is 10-3-10-4Pa is natural
It cools to room temperature, obtains chamferring 10 ° of LaAlO in c-axis3The bismuth copper selenolite film of single crystal substrates upper edge c-axis oriented growth.
In above-mentioned preparation process, sedimentary condition is：Laser frequency 3-5HZ, laser energy density 1-1.5mJ/cm2, background
Vacuum 10-4-10-8Pa, Ar Pressure 0.01-1Pa, 300-400 DEG C of base reservoir temperature, substrate and target distance 50-55mm.
2, In electrodes, electrode diameter 1mm, electrode spacing are plated above-mentioned lateral thermoelectric element upper surface is symmetrical
For 8mm.
3, the copper conductor of two a diameter of 0.1mm is connected on two In electrodes and is used as contact conductor, two copper
Conducting wire is connected as output end with voltmeter input terminal, and 1 megohm of shelves is selected in voltmeter input impedance.
4, it uses wavelength to irradiate detector surface center for the pulsed light of 532nm, output voltage is recorded with voltmeter
Signal draws detector output voltage-time response curve, as shown in Figure 4.
As shown in Figure 4, when the pulsed light energy being radiated on film is 50mW, the amplitude of output voltage signal is 72 μ
V, detectivity are 1.44 μ V/mW.
Embodiment 4
1, lateral thermoelectric element is using the LaAlO for chamferring 10 ° in c-axis3Single crystal substrates prepare a layer thickness be 110nm along c
Axis tilts the bismuth copper selenolite film of growth, and angle of inclination is 10 °.
Specifically preparation process is：By the atomic molar metering of chemical formula BiCuSeO than weighing Bi2O3, simple substance Cu, Bi and Se,
It carries out being mixed to get mixed material, mixed material is ground into 30h in ball mill, the material after grinding, which is pressed into thickness, is
Disk is encapsulated in quartz ampoule and then is passed through first with vacuum sealing tube technology by 3mm, the disk of a diameter of 25mm by above-mentioned disk
High-temperature solid phase reaction method is sintered, and obtains required bismuth copper selenolite polycrystalline ceramics target.The bismuth copper selenolite polycrystalline ceramics that will be obtained
Target is put into PLD cavitys, and 10 ° of LaAlO is chamfer in c-axis by pulsed laser deposition technique3C-axis is grown in single crystal substrates
The bismuth copper selenolite base oxide film of orientation；After film deposits, the pressure of control PLD cavitys is 10-3-10-4Pa is natural
It cools to room temperature, obtains chamferring 10 ° of LaAlO in c-axis3The bismuth copper selenolite film of single crystal substrates upper edge c-axis oriented growth.
In above-mentioned preparation process, sedimentary condition is：Laser frequency 3-5HZ, laser energy density 1-1.5mJ/cm2, background
Vacuum 10-4-10-8Pa, Ar Pressure 0.01-1Pa, 300-400 DEG C of base reservoir temperature, substrate and target distance 50-55mm.
2, In electrodes, electrode diameter 1mm, electrode spacing are plated above-mentioned lateral thermoelectric element upper surface is symmetrical
For 8mm.
3, the copper conductor of two a diameter of 0.1mm is connected on two In electrodes and is used as contact conductor, two copper
Conducting wire is connected as output end with voltmeter input terminal, and 1 megohm of shelves is selected in voltmeter input impedance.
4, it uses wavelength to irradiate detector surface center for the pulsed light of 980nm, output voltage is recorded with voltmeter
Signal draws detector output voltage-time response curve, as shown in Figure 5.
As shown in Figure 5, when the pulsed light energy being radiated on film is 50mW, the amplitude of output voltage signal is 120 μ
V, detectivity are 2.4 μ V/mW.
Claims (7)
1. a kind of optical detector based on bismuth copper selenolite thermal electric film transverse direction pyroelectric effect, by lateral thermoelectric element, in lateral heat
Two symmetrical metal electrodes (4), contact conductor (5) and the voltmeter composition of electric device upper surface setting, metal electrode (4) work
For voltage signal output end, voltage signal output end is connected with voltmeter (6) input terminal with contact conductor (5), feature
It is：The lateral thermoelectric element is oxide monocrystal substrate (1) and c-axis tilts growth on oxide monocrystal substrate (1)
Bismuth copper selenolite film (2), the metal electrode (4) be arranged in the upper surface of bismuth copper selenolite film (2)；
The bismuth copper selenolite film (2) that the c-axis tilts growth etches the preparation of bismuth copper selenolite polycrystalline ceramics target by pulse laser
It forms, specially：Bismuth copper selenolite polycrystalline ceramics target is put into PLD cavitys, is obtained in oxygen by pulsed laser deposition technique
C-axis tilts the bismuth copper selenolite film (2) of growth on compound monocrystal chip (1)；
The bismuth copper selenolite polycrystalline ceramics target preparation process includes：By the atomic molar metering of chemical formula BiCuSeO than weighing
Bi2O3, simple substance Cu, Bi and Se, carry out being mixed to get mixed material, mixed material ground into 24-48h in ball mill, will grind
It is 2-5mm that material afterwards, which is pressed into thickness, and the disk of a diameter of 20-30mm will first with vacuum sealing tube technology by above-mentioned disk
Disk is encapsulated in quartz ampoule and then is sintered by high-temperature solid phase reaction method, obtains required bismuth copper selenolite polycrystalline ceramics
Target；
The condition of the pulsed laser deposition is：Laser frequency 3-5HZ, laser energy density 1-1.5mJ/cm2, base vacuum
10-4-10-8Pa, Ar Pressure 0.01-1Pa, 300-400 DEG C of base reservoir temperature, substrate and target distance 50-55mm.
2. a kind of optical detector based on bismuth copper selenolite thermal electric film transverse direction pyroelectric effect according to claim 1, special
Sign is：The oxide monocrystal substrate (1) is that commercial c-axis chamfers LaAlO3Monocrystalline or SrTiO3Monocrystalline, mis-cut angle
For 0 ° of 45 ° of ＜ α ＜.
3. a kind of optical detector based on bismuth copper selenolite thermal electric film transverse direction pyroelectric effect according to claim 1, special
Sign is：The angle of inclination of the c-axis of the bismuth copper selenolite film (2) is identical as the mis-cut angle of oxide monocrystal substrate (1).
4. a kind of optical detector based on bismuth copper selenolite thermal electric film transverse direction pyroelectric effect according to claim 1, special
Sign is：The film thickness that the c-axis tilts the bismuth copper selenolite film (2) of growth is 50nm-500nm.
5. a kind of optical detector based on bismuth copper selenolite thermal electric film transverse direction pyroelectric effect according to claim 1, special
Sign is：After the c-axis tilts the bismuth copper selenolite film (2) grown by pulsed laser deposition, film natural cooling
It is cooled to room temperature, control pressure is 10 when cooling-3-10-4Pa。
6. a kind of optical detector based on bismuth copper selenolite thermal electric film transverse direction pyroelectric effect according to claim 1, special
Sign is：The metal electrode (4) is round, a diameter of 1-1.5mm, and the spacing between electrode is 3-15mm, electrode material
For Pt metal, Au, Ag, Al or In.
7. a kind of optical detector based on bismuth copper selenolite thermal electric film transverse direction pyroelectric effect according to claim 1, special
Sign is：The contact conductor (5) selects the enameled wire of Au, Ag or Cu, a diameter of 0.1-0.2mm.
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| KR102356683B1 (en) * | 2015-10-01 | 2022-01-27 | 삼성전자주식회사 | Thermoelectric structure, thermoelectric device and method of manufacturing same |
| CN105503187B (en) * | 2015-12-03 | 2018-02-27 | 清华大学深圳研究生院 | The preparation method of LaCuSeO thermoelectric compounds |
| CN105552203B (en) * | 2016-02-03 | 2018-04-17 | 河北大学 | A kind of light, thermal detector based on doping bismuth copper selenolite film |
| CN108534945B (en) * | 2018-03-22 | 2021-01-05 | 昆明理工大学 | Method for modulating thin film laser induced voltage |
| CN111403585B (en) * | 2020-03-03 | 2023-09-12 | 河北大学 | Optical and thermal detector based on bismuth-selenium-tellurium film material and preparation method thereof |
| CN113206184B (en) * | 2021-04-30 | 2023-04-07 | 河北大学 | Self-driven ultraviolet detector based on lead selenide film |
| CN114459603B (en) * | 2022-01-13 | 2023-10-24 | 山东大学 | High-power laser sensor and laser power meter |
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