CN110350075A - A kind of hot induced voltage material and its application - Google Patents
A kind of hot induced voltage material and its application Download PDFInfo
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- CN110350075A CN110350075A CN201810305344.1A CN201810305344A CN110350075A CN 110350075 A CN110350075 A CN 110350075A CN 201810305344 A CN201810305344 A CN 201810305344A CN 110350075 A CN110350075 A CN 110350075A
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- 239000000463 material Substances 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910003097 YBa2Cu3O7−δ Inorganic materials 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 8
- 229910002367 SrTiO Inorganic materials 0.000 claims abstract description 7
- 238000001514 detection method Methods 0.000 claims abstract description 7
- 239000012530 fluid Substances 0.000 claims abstract description 7
- 238000004549 pulsed laser deposition Methods 0.000 claims abstract description 4
- 229910002244 LaAlO3 Inorganic materials 0.000 claims abstract description 3
- 230000005855 radiation Effects 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000005057 refrigeration Methods 0.000 abstract description 4
- 230000001052 transient effect Effects 0.000 abstract description 4
- 230000003321 amplification Effects 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- 230000035807 sensation Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 39
- 229910052724 xenon Inorganic materials 0.000 description 9
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- 230000005611 electricity Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Abstract
The present invention discloses a kind of hot induced voltage material and its application, belongs to lateral thermoelectric material and device arts.The present invention selects YBa2Cu3O7‑δ(0 < δ < 0.5) film is as hot induced voltage material, the SrTiO for being 5 °~20 ° at inclination angle using pulsed laser deposition technique3Or/and LaAlO3Growth thickness is the YBa of 50~300nm in single crystalline substrate2Cu3O7‑δ(0 < δ < 0.5) film.Hot induced voltage material slew rate of the present invention is high, response time is fast, signal repeatability and linear relationship are good, without power drives and refrigeration, without amplification, detecting element is simple, work is easy, measurement dynamic range is wide, energy saving, can be used to make some raw voltage detection elements of sensitive quick thermal sensation；And temperature and thermoelectrical potential direction are vertical, dimension and direction can be independently modulated, it is easily prepared at array, detect transient state thermal field or hot-fluid, there is very big breakthrough and advantage compared to current device, applied to pulse or Continuous Heat signal detection, the industry of transient state thermal field and hot fluid detection, military field.
Description
Technical field
The present invention relates to a kind of hot induced voltage material and its applications, belong to lateral thermoelectric material and device arts.
Background technique
Currently, the thermal field and heat flow transducer of contact are broadly divided into thermoelectricity resistance type, electrothermic type, heat resistance type three categories.Heat
Resistance type sensor is the one-to-one relationship of the resistance based on metal or semiconductor and temperature, passes through measurement metal or semiconductor
The resistance of detecting element judges temperature, and this kind of detector needs power drives, and electricity is obtained under constant current or constant voltage
Resistance value and judge temperature, response speed is slow, most fast ms magnitude.Heat resistance type is when passing through sensor based on hot-fluid, in sensor
Temperature gradient is generated on thermoresistance layer, the heat flow density by sensor is obtained according to Fourier law, and a pair of of thermocouple is needed
The temperature difference of thermoresistance layer is measured, the numerical value of the temperature difference is directly proportional to the electromotive force numerical value that thermocouple generates, and it is i.e. anti-to measure temperature difference heat potential
Mirror heat flow density；In order to increase the output signal of sensor, numerous thermocouples are connected to form thermoelectric pile, the heat measured in this way
The temperature signal on resistance layer both sides is the superposition one by one of concatenated all thermocouple signals, reflects the average characteristics of multiple signals,
Response time s~ms magnitude；Electrothermic type heat flow transducer mainly has wire wound, semiconductor-type, ultrathin type (Gardon meter), is
By thermal field or hot fluid be inswept or impact thermoelectric material element (thermoresistance layer) heating, temperature gradient is brought and the thermoelectrical potential that generates is come
Temperature or heat flow density are demarcated, does not need power drives, but need the refrigeration parts such as water cooling, thermoelectrical potential and temperature gradient direction phase
Together；In general, in order to obtain big output signal needing that numerous thermocouples are together in series to form thermoelectric pile, volume increases, signal
Greatly, it can reflect the average characteristics of multiple signals, the response time is in 0.1s~20ms magnitude；And in fact, in temperature gradient direction
On the confined space in design cold end, hot end, electrode and with refrigeration part, device is complicated, it is difficult to be prepared into array.Above-mentioned three classes
Sensor is all more complicated, and detecting element dimension is big, and thermal resistance is big, has certain destruction to thermal field, even if most thin film-type
0.5mm, also brings along measured deviation, and response speed is slow, it is difficult to which manufacture is at array, it is difficult to true thermal field is captured, it is especially dynamic
The instantaneous thermal signal of state.
Summary of the invention
The purpose of the present invention is to provide the hot induced voltage material of a kind of high response rate and fast-response speed, voltage letters
Number response rate reaches 0.35mV/W/cm2, the response time reaches within 100us；The specific scheme is that selection YBa2Cu3O7-δFilm is made
For hot induced voltage material, wherein 0 < δ < 0.5.
Preferably, YBa of the present invention2Cu3O7-δFilm the preparation method comprises the following steps: being tilted using pulsed laser deposition technique
The SrTiO that angle is 5 °~20 °3Or LaAlO3Growth thickness is the YBa of 50~300nm in single crystalline substrate2Cu3O7-δ(0<δ<0.5)
Film.
The method that hot induced voltage material of the present invention is used to prepare Thermal flow detection element, specifically: in pellicular front
Inclined direction on prepare two electrodes, separated by a distance between two electrodes, electrode both ends pick out lead to coaxial cable,
It is connected on ondograph；When continuous or pulse heat source conduct radiation to film surface or the inswept film surface of hot fluid, two electricity
The voltage signal can be measured between pole；The response time is obtained on the inclined direction of film surface less than 100ns, voltage signal mV
Magnitude collects the voltage signal by ondograph or multimeter.
Preferably, the distance between two electrodes are greater than 2mm.
Voltage signal response rate of the Thermal flow detection element of the present invention under xenon lamp or high voltage mercury lamp radiation reaches
0.35mV/W/cm2More than, the response time reaches within 100us, and sunlight irradiation is lower to have comparable response rate, in black matrix, electricity
Response rate is slightly lower under the heat source of blowing；It works at room temperature, device is simple, and workflow is easy, and operating dynamic range is wide, saves energy
Source；It is based primarily upon lateral pyroelectric effect, voltage signal is caused by the temperature difference, does not need to establish thermal balance, without time term, is resisted dry
It is strong to disturb ability, and thin-film component thermal capacity is small, does not destroy thermal field substantially, can really detect transient state thermal field or hot-fluid, and measure
Dynamic range is big；Temperature gradient and thermoelectrical potential direction are vertical, and the dimension of detecting element and direction can independently modulate, easily designed
At array.
The principle of the present invention: layer structure YBa2Cu3O7-δAnisotropy with apparent structure and transport property, such as heat
Potential, conductivity, flux pinning etc. are changed within the scope of 0-0.5 by δ, modulate YBa2Cu3O7-δResistivity and phase structure,
Come modulated signal response rate and response speed, it can also be by modulation film inclination angle and thickness come adjustment signal response rate and sound
Answer speed；Using pulsed laser deposition technique in inclined SrTiO3Epitaxial film is grown in single crystalline substrate, based on atomic layer heat
The lateral pyroelectric effect of pile material crystals film, heat source radiation film surface can generate temperature gradient in thickness direction, due to
Thermoelectricity transports the anisotropy of tensor, and the voltage signal of a mV magnitude is generated on the inclined direction in pellicular front.
The raw voltage equation of thermal sensation can indicate are as follows:
V is induced potential of the film on substrate inclined direction in (1) formula；L is the edge that film receives hot (light) radiation
Effective length on inclined direction, d are film thickness；Δ S=(Sab-Sc), Sab、ScThe respectively Seebeck system in the face ab and c-axis
Number；Δ T is the temperature difference along film thickness；Angle of the θ between single crystalline substrate normal direction and (001) axis, i.e. inclination angle.
Beneficial effects of the present invention: the YBa of layer structure is utilized2Cu3O7-δFilm preparation thermal field or Thermal flow detection element,
Advantage is not need any power drives, does not need refrigeration and signal amplification, device is simple, and energy saving, workflow is simple；
For film thickness in nm rank, thermal capacity and thermal resistance are small, do not need to establish thermal balance, and the influence to thermal field is little, can reflect true
Real thermal field and transient changing, has fast-response speed (us magnitude) and higher voltage signal response rate, the repeatability of signal
It is fine with linear relationship；Since the thermoelectrical potential voltage direction of temperature gradient and film surface is vertical, the effective length of film surface is easy
In modulating and making contact conductor, the dimension of detecting element and direction can independently modulate, be readily designed to array, set in device
Meter and application above have very big breakthrough and advantage.
Detailed description of the invention
Fig. 1 is heat radiation induced potential measuring principle figure.
Specific embodiment
Invention is further described in detail in the following with reference to the drawings and specific embodiments, but protection scope of the present invention is simultaneously
It is not limited to the content.
Embodiment 1
YBa is chosen in Fig. 12Cu3O7-δFilm, wherein δ=0.01 is used as hot induced voltage material.Swash first with pulse
The SrTiO that light deposition technology is 5 ° at inclination angle3Growth thickness is the YBa of 200nm in single crystalline substrate2Cu3O7-δFilm；Then
It is separated by 4mm on inclined direction in pellicular front and prepares two electrodes, electrode both ends picks out lead to coaxial cable, according to Fig. 1
Connect ondograph；Film surface is irradiated with xenon lamp, voltage signal 0.23mV, letter are obtained on the inclined direction in pellicular front
Number response rate is 0.15mV/W/cm2。
Embodiment 2
YBa is chosen in Fig. 12Cu3O7-δFilm, wherein δ=0.07 is used as hot induced voltage material.Swash first with pulse
The SrTiO that light deposition technology is 10 ° at inclination angle3Growth thickness is the YBa of 200nm in single crystalline substrate2Cu3O7-δFilm；Then
It is separated by 4mm on inclined direction in pellicular front and prepares two electrodes, electrode both ends picks out lead to coaxial cable, according to Fig. 1
Connect ondograph；Film surface is irradiated with xenon lamp, voltage signal 0.28mV, letter are obtained on the inclined direction in pellicular front
Number response rate is 0.20mV/W/cm2。
Embodiment 3
YBa is chosen in Fig. 12Cu3O7-δFilm, wherein δ=0.01 is used as hot induced voltage material.Swash first with pulse
The LaAlO that light deposition technology is 5 ° at inclination angle3Growth thickness is the YBa of 250nm in single crystalline substrate2Cu3O7-δFilm；Then exist
It is separated by 4mm on inclined direction in pellicular front and prepares two electrodes, electrode both ends picks out lead to coaxial cable, connect according to Fig. 1
Connect ondograph；Film surface is irradiated with xenon lamp, voltage signal 0.144mV, letter are obtained on the inclined direction in pellicular front
Number response rate is 0.18mV/W/cm2。
Embodiment 4
YBa is chosen in Fig. 12Cu3O7-δFilm, wherein δ=0.07 is used as hot induced voltage material.Swash first with pulse
The LaAlO that light deposition technology is 10 ° at inclination angle3Growth thickness is the YBa of 250nm in single crystalline substrate2Cu3O7-δFilm；Then
It is separated by 4mm on inclined direction in pellicular front and prepares two electrodes, electrode both ends picks out lead to coaxial cable, according to Fig. 1
Connect ondograph；Voltage letter is obtained with xenon lamp or high voltage mercury lamp radiation film surface, on the inclined direction in pellicular front
Number 0.55mV, slew rate 0.37mV/W/cm2。
Embodiment 5
YBa is chosen in Fig. 12Cu3O7-δFilm, wherein δ=0.2 is used as hot induced voltage material.Swash first with pulse
The SrTiO that light deposition technology is 15 ° at inclination angle3Growth thickness is the YBa of 250nm in single crystalline substrate2Cu3O7-δFilm；Then
It is separated by 4mm on inclined direction in pellicular front and prepares two electrodes, electrode both ends picks out lead to coaxial cable, according to Fig. 1
Connect ondograph；Voltage letter is obtained with xenon lamp or high voltage mercury lamp radiation film surface, on the inclined direction in pellicular front
Number 0.51mV, slew rate 0.35mV/W/cm2。
Embodiment 6
YBa is chosen in Fig. 12Cu3O7-δFilm, wherein 8=0.2 is as hot induced voltage material.Swash first with pulse
The SrTiO that light deposition technology is 20 ° at inclination angle3Growth thickness is the YBa of 200nm in single crystalline substrate2Cu3O7-δFilm；Then
It is separated by 4mm on inclined direction in pellicular front and prepares two electrodes, electrode both ends picks out lead to coaxial cable, according to Fig. 1
Connect ondograph；Voltage letter is obtained with xenon lamp or high voltage mercury lamp radiation film surface, on the inclined direction in pellicular front
Number 0.47mV, slew rate 0.31mV/W/cm2。
Embodiment 7
YBa is chosen in Fig. 12Cu3O7-δFilm, wherein δ=0.45 is used as hot induced voltage material.Swash first with pulse
The LaAlO that light deposition technology is 15 ° at inclination angle3Growth thickness is the YBa of 250nm in single crystalline substrate2Cu3O7-δFilm；Then
It is separated by 4mm on inclined direction in pellicular front and prepares two electrodes, electrode both ends picks out lead to coaxial cable, according to Fig. 1
Connect ondograph；Voltage letter is obtained with xenon lamp or high voltage mercury lamp radiation film surface, on the inclined direction in pellicular front
Number 0.38mV, slew rate 0.25mV/W/cm2。
| Embodiment | 0 <, 8 < 0.5 | Inclination angle | Thickness | Xenon lamp response rate |
| 1 | YBa2Cu3O7-δ, δ=0.01 | 5° | 200nm | 0.15mV/W/cm2 |
| 2 | YBa2Cu3O7-δ, δ=0.07 | 10° | 200nm | 0.20mV/W/cm2 |
| 3 | YBa2Cu3O7-δ, δ=0.01 | 5° | 250nm | 0.18mV/W/cm2 |
| 4 | YBa2Cu3O7-6, δ=0.07 | 10° | 250nm | 0.37mV/W/cm2 |
| 5 | YBa2Cu3O7-δ, 8=0.2 | 15° | 250nm | 0.35mV/W/cm2 |
| 6 | YBa2Cu3O7-δ, 8=0.2 | 20° | 200nm | 0.31mV/W/cm2 |
| 7 | YBa2Cu3O7-δ, δ=0.45 | 15° | 250nm | 0.25mV/W/cm2 |
Claims (4)
1. a kind of hot induced voltage material, it is characterised in that: selection YBa2Cu3O7-δFilm is as hot induced voltage material, wherein 0
<δ<0.5。
2. hot induced voltage material according to claim 1, which is characterized in that the YBa2Cu3O7-δThe preparation method of film
Are as follows: the SrTiO for being 5 °~20 ° at inclination angle using pulsed laser deposition technique3Or LaAlO3Growth thickness is 50 in single crystalline substrate
The YBa of~300nm2Cu3O7-δ(0 < δ < 0.5) film.
3. the method that hot induced voltage material as claimed in claim 1 or 2 is used to prepare Thermal flow detection element, it is characterised in that:
Two electrodes are prepared on inclined direction in pellicular front, separated by a distance between two electrodes, electrode both ends pick out lead and arrive
Coaxial cable is connected on ondograph；When continuous or pulse heat source conduct radiation to film surface or the inswept film of hot fluid
When surface, the voltage signal can be measured between two electrodes.
4. according to the method described in claim 3, it is characterized by: the distance between two electrodes are greater than 2mm.
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| CN201810305344.1A CN110350075A (en) | 2018-04-08 | 2018-04-08 | A kind of hot induced voltage material and its application |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114112087A (en) * | 2021-11-12 | 2022-03-01 | 中国航空工业集团公司沈阳空气动力研究所 | Array type atomic layer thermopile heat flow sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544347A (en) * | 2011-10-08 | 2012-07-04 | 昆明理工大学 | Quick-response photo-thermal induced voltage thin-film material and application |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544347A (en) * | 2011-10-08 | 2012-07-04 | 昆明理工大学 | Quick-response photo-thermal induced voltage thin-film material and application |
Non-Patent Citations (1)
| Title |
|---|
| X.M. XIONG ET AL.: ""Dependence of the laser-induced voltages on the oxygen content in normal state YBa2Cu3O7−δ films"", 《PHYSICA C》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114112087A (en) * | 2021-11-12 | 2022-03-01 | 中国航空工业集团公司沈阳空气动力研究所 | Array type atomic layer thermopile heat flow sensor |
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Application publication date: 20191018 |