CN104900487A - Method and apparatus for preparing black silica by adopting lattice scanning - Google Patents
Method and apparatus for preparing black silica by adopting lattice scanning Download PDFInfo
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- CN104900487A CN104900487A CN201510203149.4A CN201510203149A CN104900487A CN 104900487 A CN104900487 A CN 104900487A CN 201510203149 A CN201510203149 A CN 201510203149A CN 104900487 A CN104900487 A CN 104900487A
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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Abstract
The invention relates to a method and apparatus for preparing black silica by adopting lattice scanning. The method includes the following steps that: 1, a silicon wafer is arranged in a doped material-containing sample chamber; 2, a single laser beam of a pulse laser passes through a diaphragm, a reflector, a half wave plate, a polarizer, a shutter, a beam expanding mirror, a focusing lens, a Dammann grating and the like, so that lattice laser can be obtained; 3, the lattice laser irradiates on the surface of the silicon wafer, and a computer controls the opening and closing of the shutter and the movement of a three-dimensional translational platform, and therefore, lattice scanning can be realized, and a black silica material of which the surface is of a micro pointed cone structure can be obtained. According to the method and apparatus of the invention, the Dammam grating is adopted, and the single beam laser can be converted into two-dimensional and equal-light intensity array beams; when the Dammam grating splits the laser beam, the influence of chromatic dispersion in the light splitting process of an ordinary semi-transmittance and semi-reflection mirror can be avoided, and the quality of the split light beams can be ensured; and point-by-point scanning adopted for preparing the black silica is converted into lattice scanning, and therefore, the preparation efficiency of the black silica can be greatly improved.
Description
Technical field
The present invention relates to photoelectric semiconductor material preparation field, refer more particularly to the method and apparatus that a kind of lattice scanning prepares black silicon.
Background technology
Black silicon refers to and adopts physics or chemical method to etch monocrystalline silicon, and a kind of surface obtained has the material of periodic micro structure.Black silicon all has higher absorptivity to visible ray and near infrared light, can reach 90% 0.25 μm ~ 2.5 μm scope internal absorption factors.2005, Eric Mazur teaches the black silicon photodiode detector that research group personnel adopt Gold Films Irradiated by Femtosecond Laser n (111) silicon substrate to prepare, under the reverse 0.5V bias voltage of room temperature, Photoresponse at 1000nm place is 120A/W, higher than commercial Si detector two order of magnitude (Opt.Lett., 2005,30 (14), 1773).Black silicon material has huge potentiality preparing in solar cell, Infrared Detectors etc. because of the performance of its excellence.
The method of the black silicon of current preparation is a lot, mainly contains pulse laser irradiation, wet etching, ion implantation in conjunction with pulsed laser anneal etc.Wherein, pulse laser irradiation is adopted to prepare black silicon, because of the preparation that laser peak power in its course of processing is high, ablation threshold is used to black silicon material accurately and widely.Pulse laser is adopted to prepare black silicon, normally by after single beam laser line focus lens focus, arrive surface of silicon through the sample room with quartz window, control by galvanometer the movement that the motion of light beam or D translation platform carry out Quality control frame, realize the relative motion of laser beam and sample room.This single beam laser is slow at the mode process velocity of silicon face point by point scanning, and when the black silicon of preparation large area, expend time in length, is not suitable for batch production.So the method exploring the black silicon of efficient preparation is the focus of attention of related researcher always.
In first technology 201110260886.X " a kind of method and apparatus preparing Large-Area-Uniform black silicon material fast ", by laser beam successively by beam shaping, spatial filter, beam expander, focusing optic, the shaping of single bundle circular laser beam is also converged as band shaped laser spot.The essence of this method carries out shaping and amplification to the light spot shape of single beam laser, thus realize the rapid large-area preparation of black silicon.
In first technology 201210523560.6 " manufacture method of the black silicon of large area that a kind of micro-structural cycle is controlled ", adopt beam splitter that laser is carried out beam splitting, utilize specific multiple-beam interference to combine, form the optical field distribution in cycle.By the control to interference optical field, realize the large area preparation of black silicon.
Usual beam splitting arrangement has semi-transparent semi-reflecting lens or corner cube reflector, and these two kinds of beam splitters can only realize light beam and be divided into two-beam, realize multi beam light splitting, must use multicomponent Shu Jing.In addition, common semi-transparent semi-reflecting lens will introduce material dispersion, and for avoiding the shortcoming of material dispersion, semi-transparent semi-reflecting lens must be prepared into very thin, which not only adds the difficulty of processing, and easily damages.As adopted corner cube reflector, the rib namely intersected by mirror surface is placed on the center of light beam, although be spatially separated by light beam, beam center originally becomes the edge of light beam after beam splitting, is difficult to the laser beam quality after ensureing beam splitting.
The present invention, by introducing Darman raster, provides a kind of lattice scanning to prepare the method and apparatus of black silicon.Darman raster is as fraunhofer type optics, incident wave is the isocandela hot spot of certain dot matrix number through the Fraunhofer diffraction pattern sample that it produces, and completely avoid the uneven distribution of general amplitude grating because of the spectrum point light intensity caused by sinc function intensity envelope.In addition, Darman raster beam uniformity does not affect by incident intensity, be convenient to utilize conventional large scale integrated circuit technology to process, and there is high diffraction efficiency, as the two-value Darman raster diffraction efficiency limit can reach 80%, and the Darman raster diffraction efficiency limit of continuous type position phase is up to 97 ~ 98%.Above-mentioned advantage makes Darman raster become a kind of desirable beam splitting device.
Adopt pulse laser to etch silicon, its energy density need be greater than the melting threshold 1.5kJ/m of silicon
2.Single beam laser irradiation silicon face, it is as follows that its energy density calculates formula:
Single beam laser becomes N × N dot matrix laser after Damman raster splitting beam, and the energy density of dot matrix laser irradiation silicon face is:
The pass of pulse laser single pulse energy and average power is:
In above-mentioned formula 1.1,1.2 and 1.3, I is laser flux (laser energy density), P is average laser power, E is the single pulse energy of laser, η is the diffraction efficiency of Darman raster, N be Damman raster splitting beam than parameter, f is laser repetition rate, π is circumference ratio constant, and R is the laser facula radius inciding silicon chip surface.
During the black silicon of actual preparation, be subject to the restriction of silicon melting threshold, Damman raster splitting beam is directly proportional to pulse laser power than the numerical value of Parameter N.For femto-second laser, as wavelength 800nm, repetition rate 1kHz, laser spot diameter 200 μm, the diffraction efficiency of Darman raster calculates, when laser flux is greater than 1.5kJ/m with 70%
2time, must P/N be met by the average power of the known laser of formula 1.2
2be greater than 0.047W, namely the single pulse energy E of laser must meet E/N
2be greater than 0.047mJ.The femto-second laser of current repetition rate 1kHz, single pulse energy 12mJ realizes volume production, if E gets 12mJ, then and N
2darman raster is less than 255, so can be adopted to be divided into by single beam laser the dot matrix laser of 15 × 15 to prepare black silicon.Along with the single pulse energy of pulse laser progressively improves, this employing Darman raster lattice scanning prepares the method for black silicon will be more and more attractive.
Summary of the invention
The object of the invention is to prepare black silicon process velocity slowly to solve traditional point by point scanning mode, when the black silicon of preparation large area, expend time in long problem, provides the method and apparatus that a kind of lattice scanning prepares black silicon.
The object of the invention is to be achieved through the following technical solutions.
A kind of lattice scanning of the present invention prepares the device of black silicon, and this device comprises pulse laser, diaphragm, speculum, half-wave plate, polarizer, shutter, beam expanding lens, condenser lens, Darman raster, specimen holder, sample room, D translation platform; Laser sends from laser, passes through said elements successively; Also comprise computer, computer controls the opening and closing of shutter and the motion of D translation platform respectively by shutter controller and D translation platform controller.
A kind of lattice scanning of the present invention prepares the method for black silicon, and concrete steps are:
Step 1: silicon chip is placed in the sample room containing dopant;
Step 2: the single beam laser of pulse laser is obtained dot matrix laser by elements such as diaphragm, speculum, half-wave plate, polarizer, shutter, beam expanding lens, condenser lens and Darman rasters successively;
Step 3: realize lattice scanning by the opening and closing of computer control shutter and the motion of D translation platform, obtains the black silicon material of surface for micro-pointed cone structure.
In above-mentioned steps 1, silicon chip is p-type silicon or N-shaped silicon, and its crystal orientation is (001) or (111).
Described dopant is gaseous state, the sulphur system material of powdered form or the material of gaseous nitrogen content element.Gaseous sulfur system material is H
2s or SF
6, powdered form sulphur system material is S, Se, Te powder; The material of Nitrogen element is N
2or NF
3.
In above-mentioned steps 2, pulse laser is nanosecond, psec or femto-second laser, and the frequency of pulse laser is 1 ~ 10kHz.Described Darman raster is Darman raster that is single or combination, and single beam laser becomes uniform dot matrix laser after Darman raster.The luminous point number of dot matrix laser is determined by the Damman raster splitting beam ratio designed; The luminous point spacing of dot matrix laser affects by the grating lattice constant of Darman raster, also affects by the distance of Darman raster and specimen holder simultaneously; In dot matrix laser, the diameter of single luminous point can be regulated by the distance changing Darman raster and specimen holder, and single spot diameter scope is 10 ~ 600 μm.
In above-mentioned steps 3, dot matrix laser irradiation is greater than the melting threshold 1.5kJ/m of silicon to the energy density of luminous point single during silicon face
2.When the black silicon of preparation large scale, first scanned in the horizontal direction by D translation platform Quality control frame.After horizontal direction is scanned, close shutter, then to be moved longitudinally a segment distance by D translation platform Quality control frame, open shutter, repeat the scanning of horizontal direction.The lattice constant b and the Damman raster splitting beam that wherein vertically move distance a and dot matrix laser meet relation a=Nb/ (N-1) than Parameter N.
Beneficial effect
Single beam laser, by introducing Darman raster, is become the isocandela array beams of two dimension by the present invention.When Darman raster carries out beam splitting to laser, avoid the impact of dispersion in common semi-transparent semi-reflecting lens spectroscopic processes, ensure that the beam quality after beam splitting simultaneously.By controlling the single pulse energy of laser, regulating the vertical range of Darman raster and specimen holder, making single spot energy density in dot matrix laser be greater than the etching threshold value of silicon, thus realize the etching of silicon.Compared with preparing the method for black silicon with traditional single beam laser direct irradiation silicon materials, the method changes the mode of the black silicon of preparation into lattice scanning by point by point scanning, significantly improves the preparation efficiency of black silicon.
Accompanying drawing explanation
Fig. 1 is that single beam laser is divided into 4 × 4 dot matrix laser schematic diagrames by single Darman raster;
Fig. 2 is the installation drawing that lattice scanning prepares black silicon;
In figure, 1-pulse laser, 2-diaphragm, 3-speculum, 4-half-wave plate, 5-polarizer, 6-shutter, 7-beam expanding lens, 8-condenser lens, 9-Darman raster, 10-specimen holder, 11-sample room, 12-D translation platform, 13-computer.
Embodiment
Below in conjunction with drawings and Examples, the present invention is elaborated.
As shown in Figure 2, lattice scanning prepares a device for black silicon, comprises laser 1, diaphragm 2, speculum 3, half-wave plate 4, polarizer 5, shutter 6, beam expanding lens 7, condenser lens 8, Darman raster 9, specimen holder 10, sample room 11, D translation platform 12, computer 13.Its Computer 13 controls the opening and closing of shutter 6 and the motion of D translation platform 12 respectively by shutter controller and D translation platform controller.
Lattice scanning prepares a method for black silicon, comprises the following steps:
Step 1: be placed in by silicon chip on specimen holder 10, vacuumize sample room 11, will be filled with the SF of certain pressure intensity after arriving predetermined vacuum level in sample room 11
6gas;
Step 2: the single beam laser sent by pulse laser 1 obtains 4 × 4 dot matrix laser by diaphragm 2, speculum 3, half-wave plate 4, polarizer 5, shutter 6, beam expanding lens 7, condenser lens 8 and Darman raster 9 successively;
Step 3: by dot matrix laser irradiation silicon chip surface, the motion of the opening and closing and D translation platform 12 that control shutter 6 by computer 13 realizes lattice scanning, obtains the black silicon material of surface for micro-pointed cone structure;
In above-mentioned steps 2, pulse laser 1 is femto-second laser, and pulsewidth is 100fs, repetition rate 1kHz, single pulse energy 3mJ, and average power is 3W.Half-wave plate 3 and polarizer 5 are used for controlling the size of laser 1 power output.Beam expanding lens 7 and condenser lens 8 are used for regulating the spot diameter size inciding Darman raster 9.Single beam laser becomes uniform 4 × 4 dot matrix laser after Darman raster 9, as shown in Figure 1.In dot matrix laser, lattice constant b is 1.5mm, and single spot diameter is 200 μm.The diffraction efficiency of Darman raster is 70%, and in the process of the black silicon of preparation, by regulating half-wave plate and polarizer to make laser power be greater than 1.1W, from formula 1.2, the energy density inciding the single spot of silicon face is greater than 1.5kJ/m
2, ensure that dot matrix laser can effectively etch silicon.
In above-mentioned steps 3 when the black silicon of preparation large scale, first by D translation platform Quality control frame (in Fig. 2 x direction) scanning in the horizontal direction of submicron order precision.After horizontal direction is scanned, close shutter, then by D translation platform Quality control frame longitudinally (in Fig. 2 y direction) displacement a, open shutter, repeat the scanning of horizontal direction.In the present embodiment, a equals 2mm, meets a=Nb/ (N-1), like this in the process of scanning, maintains the uniformity of silicon chip scanning.
In the above-described embodiments, when Darman raster carries out beam splitting to laser, avoid the impact of dispersion in common semi-transparent semi-reflecting lens spectroscopic processes, ensure that the quality of laser after beam splitting.Single beam laser is divided uniformly 4 × 4 dot matrix laser by Darman raster, and its process velocity is 16 times of traditional single beam laser, significantly improves the preparation efficiency of black silicon.
Although describe in detail the present invention with reference to above-mentioned embodiment, should be appreciated that the present invention is not limited to disclosed execution mode and embodiment, for the technical staff of this professional domain, various change can be carried out to its form and details.
Claims (10)
1. lattice scanning prepares a method and apparatus for black silicon, it is characterized in that the method comprises:
Step 1: silicon chip is placed in the sample room containing dopant;
Step 2: the single beam laser of pulse laser (1) is obtained dot matrix laser by elements such as diaphragm (2), speculum (3), half-wave plate (4), polarizer (5), shutter (6), beam expanding lens (7), condenser lens (8) and Darman rasters (9) successively;
Step 3: by dot matrix laser irradiation silicon chip surface, the motion of the opening and closing and D translation platform (12) that control shutter (6) by computer (13) realizes lattice scanning, obtains the black silicon material of surface for micro-pointed cone structure.
2. a kind of lattice scanning according to claim 1 prepares the method for black silicon, it is characterized in that: described dopant comprises gaseous state, the sulphur system material of powdered form or the material of gaseous nitrogen content element; Gaseous sulfur system material is H
2s or SF
6, powdered form sulphur system material is S, Se, Te powder; The material of Nitrogen element is N
2or NF
3.
3. a kind of lattice scanning according to claim 1 prepares the method for black silicon, it is characterized in that: described pulse laser (1) is nanosecond, psec or femto-second laser, and frequency is 1 ~ 10kHz.
4. a kind of lattice scanning according to claim 1 prepares the method for black silicon, it is characterized in that: described Darman raster (9) is single Darman raster or combination Darman raster, and single beam laser becomes uniform dot matrix laser after Darman raster (9).
5. a kind of lattice scanning according to claim 4 prepares the method for black silicon, it is characterized in that: the luminous point number of dot matrix laser is determined by the Damman raster splitting beam ratio designed.
6. a kind of lattice scanning according to claim 4 prepares the method for black silicon, it is characterized in that: in dot matrix laser, the diameter of single luminous point regulates with the distance of specimen holder (10) by changing Darman raster (9), and single spot diameter scope is 10 ~ 600 μm.
7. a kind of lattice scanning according to claim 1 prepares the method for black silicon, it is characterized in that: when dot matrix laser irradiation is to silicon face, and the energy density of single luminous point is greater than the melting threshold 1.5kJ/m of silicon
2.
8. a kind of lattice scanning according to claim 1 prepares the method for black silicon, it is characterized in that: when the black silicon of preparation large scale, first scanned in the horizontal direction by D translation platform Quality control frame; After horizontal direction is scanned, close shutter, then to be moved longitudinally a segment distance by D translation platform Quality control frame, open shutter, repeat the scanning of horizontal direction.
9. a kind of lattice scanning according to claim 8 prepares the method for black silicon, it is characterized in that: the move longitudinally lattice constant b of distance a and dot matrix laser and Damman raster splitting beam of D translation platform (12) Quality control frame (10) meets relation a=Nb/ (N-1) than Parameter N.
10. lattice scanning prepares a device for black silicon, it is characterized in that: this device comprises pulse laser (1), diaphragm (2), speculum (3), half-wave plate (4), polarizer (5), shutter (6), beam expanding lens (7), condenser lens (8), Darman raster (9), specimen holder (10), sample room (11), D translation platform (12); Laser sends from laser, passes through said elements successively; Also comprise computer (13), computer (13) controls the opening and closing of shutter (6) and the motion of D translation platform (12) respectively by shutter controller and D translation platform controller.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105458530A (en) * | 2016-01-29 | 2016-04-06 | 孙树峰 | Device and method for machining aviation engine blade film hole through femtosecond lasers |
| CN109374395A (en) * | 2018-11-13 | 2019-02-22 | 中国科学院上海硅酸盐研究所 | Sample sealed compartment for array sample laser heating system |
| CN110238531A (en) * | 2019-04-15 | 2019-09-17 | 清华大学 | Femtosecond laser makes the method and system of microcosmic speckle in Digital Image Correlation Method |
| CN111313221A (en) * | 2020-03-19 | 2020-06-19 | 长春理工大学 | Laser for directly generating double-path coherent light |
| CN115922093A (en) * | 2023-01-06 | 2023-04-07 | 吉林大学 | Method for preparing single crystal silicon surface lattice structure by nanosecond laser irradiation |
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| CN105458530A (en) * | 2016-01-29 | 2016-04-06 | 孙树峰 | Device and method for machining aviation engine blade film hole through femtosecond lasers |
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| CN111313221A (en) * | 2020-03-19 | 2020-06-19 | 长春理工大学 | Laser for directly generating double-path coherent light |
| CN115922093A (en) * | 2023-01-06 | 2023-04-07 | 吉林大学 | Method for preparing single crystal silicon surface lattice structure by nanosecond laser irradiation |
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