CN104885363A - Semiconductor switch arrangement - Google Patents
Semiconductor switch arrangement Download PDFInfo
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- CN104885363A CN104885363A CN201280078041.1A CN201280078041A CN104885363A CN 104885363 A CN104885363 A CN 104885363A CN 201280078041 A CN201280078041 A CN 201280078041A CN 104885363 A CN104885363 A CN 104885363A
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- semiconductor switch
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- switching device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
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Abstract
A semiconductor switch arrangement comprising for each current phase a first and a second semiconductor switch (2a, 2b), a first and a second diode (3a, 3b), means for measuring voltages from input and output lines of said semiconductor switch and means for measuring current (8) arranged in series with said semiconductor switch. Additionally, the arrangement comprises a control element (14) configured to switch on the semiconductor switch arrangement at zero-voltage point and to switch off the semiconductor switches at zero-current point.
Description
Background technology
The present invention relates to the method and apparatus for commutation circuit.
One of problem be associated with conventional mechanical switch between contact surface, often produces electric arc when turning off, and this causes the wearing and tearing of switch.
Summary of the invention
Thus, the object of this programme is to provide a kind of new method and a kind of equipment for realizing the method.Object of the present invention is realized by the method and apparatus characterized by the content stated in independent claims.The preferred embodiment of the present invention is disclosed in the dependent claims.
The program is based on following design: utilize and make circuit switch to shutoff from connection step by step for the paired semiconductor switch of each electric current phase and the characteristic of diode that is connected in series with each semiconductor switch, wherein, each diode can be external diode or the internal body diodes of second half conductor switch.
The favorable characteristics of the method and apparatus of the program is: can arrange and connect and zero current disconnection the no-voltage of circuit, not produce the scheme of electric arc when this makes it possible to be provided in shutoff.
Accompanying drawing explanation
In more detail the program is described below with reference to appended (adding) accompanying drawing by preferred implementation, in the accompanying drawings:
Fig. 1 a and Fig. 1 b is the schematic diagram of the semiconductor switching device for 1 phase AC circuit;
Fig. 2 schematically shows the method for the electric current in commutation circuit;
Fig. 3 schematically shows the other method for the electric current in commutation circuit;
Fig. 4 to illustrate that in the circuit comprising semiconductor switching device phase voltage and phase current are about the example graph of time during connection event;
Fig. 5 to illustrate that in the circuit comprising semiconductor switching device phase voltage and phase current are about the example graph of time during shutoff event;
Fig. 6 schematically shows a kind of semiconductor switching device of execution mode;
Fig. 7 schematically shows the semiconductor switching device of another execution mode;
Fig. 8 schematically shows the semiconductor switching device for 3 phase AC circuit according to block diagram;
Fig. 9 schematically shows according to block diagram and connect 3 phase semiconductor switching device in no-voltage situation;
Figure 10 schematically shows according to block diagram and turn off 3 phase semiconductor switching device in zero current situation;
The overcurrent that Figure 11 schematically shows for the execution mode comprising active crow bar according to block diagram turns off logic;
Figure 12 schematically shows the execution mode of the semiconductor switching device for the 3 phase AC circuit comprising series connection isolating switch; And
Figure 13 schematically shows the method for breaking circuit under overcurrent event.
Embodiment
In the drawings, part and the parts of similar structure and/or function are indicated with identical Reference numeral.
Fig. 1 a and Fig. 1 b is the schematic diagram of the semiconductor switching device for 1 phase AC circuit.Execution mode shown in Fig. 1 a comprises the semiconductor switching device 1 be connected with 1 cross streams (AC) circuit.The semiconductor switching device of Fig. 1 a comprises the first semiconductor switch 2a and the second semiconductor switch 2b that connect in parallel.First diode 3a and the first semiconductor switch 2a is connected in series, and the second diode 3b and the second semiconductor switch 2b is connected in series, make the forward bias direction of the first diode and the second diode to described Diode series the forward bias direction of internal body diodes of the first corresponding semiconductor switch of being connected and the second semiconductor switch contrary.1 phase AC source 4, input resistor 5a, input inductor 5b, load current 10, loading resistor 6a and load inductor is also show in this figure.Additionally, the equipment of Fig. 1 a also comprises for the device 7 of measuring voltage and the device 8 for measuring electric current, and the described device 8 for measuring electric current is in series arranged to measure electric current with described semiconductor switch.Preferably, semiconductor switching device also comprises overvoltage protection element 9, and this overvoltage protection element 9 is for absorbing the inductive energy produced by making circuit shut-down in overcurrent event.Thus, overvoltage protection element 9 may be used for the voltage limited across semiconductor switch and interrupts (break) to prevent semiconductor switch.The semiconductor switching device of Fig. 1 a may be used for controlling to connect circuit under no-voltage point and under zero-current point breaking circuit.
By realizing the connection under no-voltage point according to the method for Fig. 2, wherein, the polarity of 201 phase voltages can be detected in response to the order of connecting circuit.Can by detecting the polarity of phase voltage for the device 7 of measuring voltage.Then, can make with back-biased Diode series the semiconductor switch that is connected connect 202 for conducting state.This means, if voltage is just, then makes the second semiconductor switch 2b connect as conducting state, and if voltage is negative, then makes the first semiconductor switch 2a connect as conducting state.Now, in main circuit, there is no current flowing, this is because to the corresponding diode 3b be switched on as semiconductor switch 2b, 2a of conducting state are connected in series or diode 3a reverse bias, thus prevent the current flowing in circuit.When the polarity of phase voltage is changed, electric current starts to flow in main circuit by semiconductor switch in the on-state and after the change in polarity of phase current along the corresponding diode of forward connection, described semiconductor switch in the on-state depends on that the original polarity of voltage is the first semiconductor switch 2a or the second semiconductor switch 2b, and corresponding diode depends on that the original polarity of voltage is corresponding first diode 3a or the second diode 3b.Simultaneously, change in polarity in response to phase voltage makes second half conductor switch of being still turned off connect 203 for conducting state, and second half conductor switch described is the semiconductor switch that connects of the Diode series be connected with along forward during original detected polarity of voltage ground.Therefore, electric current flows during two kinds of current polarities in main circuit.In addition, can by detecting the second change in polarity of phase voltage for the device 7 of measuring voltage.Thus, main circuit is switched under no-voltage.This is the beneficial manner connecting circuit, and reason can avoid current spike and there is not the voltge surge relevant to connection event, thus such as can avoid electromagnetic interference.
The equipment that use is such be shown in Fig. 4 and connected the example of circuit according to such method, wherein, having shown the change about the time of phase voltage 12 and phase current 11.In this example, switchgear is at time t
0reception to connecting the order of circuit, and due to phase voltage be negative, so the first semiconductor switch 2a is switched on as conducting state.When phase voltage 12 is at time t
1time changing polarity chron, phase current 11 starts to flow in main circuit, and mutually in the same time the second semiconductor switch 2b be also switched on as conducting state.
Can by the shutoff realized under zero-current point according to the method for Fig. 3, wherein, the order in response to breaking circuit detects the polarity of 301 phase voltages and the polarity of phase current.By detecting the polarity of phase voltage and the change in polarity of phase voltage for the device 7 of measuring voltage, and can detect the polarity of phase current and the change in polarity of phase current by the device 8 for measuring electric current.302 are turned off for nonconducting state in response to the polarity of phase voltage semiconductor switch 2a, the 2b be connected in series with back-biased diode 3a, 3b that make identical with the polarity of phase current.This means, if both voltage and currents are just, then makes the second semiconductor switch 2b turn off as nonconducting state, and if both voltage and currents are negative, then makes the first semiconductor switch 2a turn off as nonconducting state.If the polarity of phase voltage is not identical with the polarity of phase current, that is, one is for negative and another one is just, then do not take action until detect that phase voltage is identical with the polarity of phase current.Thus, when phase current is changing its direction, phase current is owing to being reverse biased with diode 3a, 3b that still semiconductor switch 2a, 2b is in the on-state connected in series and no longer having current path, on the other hand, second half conductor switch under nonconducting state also stops current flowing.Then, turn off from step 302 to have passed through second half conductor switch be substantially equal to the AC semi-cyclic time after make still semiconductor switch in the on-state turn off 303 for nonconducting state.Can guarantee that the polarity of voltage is contrary with the semiconductor switch conducts sense of current with the polarity of electric current by this way.Also should monitor phase voltage to guarantee no longer to make current turns ON due to the phase difference between phase current and phase voltage.This is the beneficial manner of breaking circuit, and reason is the due to voltage spikes that the shutoff event under zero current prevents to cause equipment itself or other equipment electromagnetic interference.Additionally, may not need to use the quick shutoff of mechanical switch, this can life-span of prolonged mechanical switch.
The equipment that use is such is shown and according to the example of such method breaking circuit in Fig. 5, wherein, has shown the change about the time of phase voltage 12 and phase current 11.In this example, switchgear is at time t
0reception to the order of breaking circuit, be negative in both this moment phase voltage 12 and phase current 11, first make the first semiconductor switch 2a turn off as nonconducting state.When phase current 11 is at time t
1its direction of time changing time, electric current no longer has current path and electric current in main circuit is turned off.When at time t
2moment have passed through when being substantially equal to AC semi-cyclic time, the second semiconductor switch 2b is also turned off as nonconducting state returns in lower half cycle period to prevent electric current.In other words, in Figure 5, t substantially
2-t
0=T/2.This makes equipment and method independent of the frequency of the circuit with this equipment connection, thus identical equipment can be used in the circuit of optional frequency such as 50Hz, 60Hz or 400Hz.
Fig. 1 b shows simpler and has more cost-benefit semiconductor switching device 1.In this embodiment, first semiconductor switch 2a and the second semiconductor switch 2b is connected in series, thus the internal body diodes (so-called body diode) of the first semiconductor switch 2a replaces the second diode 3b, and the internal body diodes of the second semiconductor switch 2b (so-called body diode) replaces the first diode 3a.In addition, connection can be similar, and this execution mode can realize the method shown in Fig. 2 and Fig. 3 in the same manner.This execution mode is used when can be enough to be used in the described application discussed in the maximum forward current value specified by the internal body diodes for semiconductor switch.
Fig. 6 shows a kind of semiconductor switching device of execution mode, and wherein, this semiconductor switching device also comprises main switch 13.Semiconductor switching device 1 such as can be similar with the semiconductor switching device shown in Fig. 1 b to Fig. 1 a in every other, and semiconductor switching device 1 can be used to realize the method for Fig. 2 and Fig. 3.In figure 6, semiconductor switch 2a, 2b is similar with diode 3a, 3b with semiconductor switch 2a, 2b of diode 3a, 3b and Fig. 1 a.Main switch 13 can comprise mechanical switch, and this mechanical switch can be such as useful especially in short circuit event supper-fast bistable mechanical switch, but can use dissimilar mechanical switch in various embodiments.In such execution mode, under main switch 13 can be in nonconducting state in the moment receiving the order of connecting circuit.Then, the method that can illustrate according to composition graphs 2 connects semiconductor switch 2a, 2b to connect the electric current in circuit.Then, when both semiconductor switch 2a, 2b all in the on-state time, main switch 13 can be made to connect as conducting state.Then, current path can be made from the commutation of semiconductor switch 2a, 2b branch to main switch 13 branch due to lower on-state loss.Then, semiconductor switch 2a, 2b can be made to turn off as nonconducting state.
When receiving the order of breaking circuit, semiconductor switch 2a, 2b first can be made to connect as conducting state.Then, main switch 13 can be made to turn off as nonconducting state.After this, such as, as is described in connection with fig. 3, main circuit can be made to turn off to stop current flowing.
Fig. 7 shows another execution mode that in other respects can be similar to the execution mode of Fig. 6, and semiconductor switch 2a, 2b are similar with diode 3a, 3b part to semiconductor switch 2a, 2b of Fig. 1 b with diode 3a, 3b part.
Fig. 8 shows the semiconductor switching device for 3 phase AC circuit according to block diagram.In 3 phase AC application of above-mentioned semiconductor switching device 1, the semiconductor switching device according to Fig. 1 a, Fig. 1 b, Fig. 6 or Fig. 7 and the method according to Fig. 2 and/or Fig. 3 can be applied separately mutually for each.Fig. 8 also show can at the control element 14 controlling use in semiconductor switching device process and some other parts and unit.Identical control element 14 can be configured to be used in 1 phase application with in 3 mutually both application.
The main switch 13 of 3 phase switches can comprise mechanical switch, such as, and supper-fast bistable mechanical switch.Semiconductor switching device 1 can also comprise: comprise semiconductor switch 2a, the 2b of diode 3a, 3b, overvoltage protection element 9, the device 7 for measuring voltage of phase line and the device 8 for measuring electric current alternatively, and the described device 8 for measuring electric current and semiconductor switch in series arrange to measure the electric current 8 of phase line.In various embodiments, semiconductor switching device 1 can also comprise at least one in following content: graphical user interface 15, control element 14 (such as, programmable integrated circuit (IC), as field programmable gate array (FPGA), microcontroller (MCU) or digital signal processor (DSP)), active crow bar (active crowbar) 17, the current measurement circuit 16 of active crow bar, comprise device 19 for determining lowest high-current value and the circuit overcurrent protection 18 for the device 20 of determining maximum current speed, the main switch drive circuit 21 of phase line, the semiconductor switch drive circuit 22 of phase line and the drive circuit 23 of active crow bar.
Each in 3 phase semiconductor switching device comprises the main switch 13 be connected in parallel with semiconductor switch 2a, 2b and overvoltage protection element 9 mutually.Preferably, this semiconductor switch can control to make it possible to this semiconductor switch completely and arbitrarily connects and turn off.Semiconductor switch 2a, 2b can comprise insulated gate bipolar transistor (IGBT), gate turn-off thyristor (GTO) or integrated grid change transistor (IGCT).
According to execution mode, graphical user interface 15 can be connected to control element 14.Graphical user interface can be configured to: receive input from user to arrange the set point of 3 phase semiconductor switching device; Order is provided to 3 phase semiconductor switching device; And the state information had from 3 phase semiconductor switching device and measurement result.
According to execution mode, the device 7 for measuring voltage of phase line can be connected to control element 14.Can according to each input from switch block 13,2a, 2b and measurement of output end voltage.Control element 14 can control the turn-on power loss of 3 phase switches based on the voltage measurements by obtaining for the device 7 of measuring voltage.Control element 14 can also use voltage measurements to control the normal turn-off function of 3 phase switches.
According to execution mode, can being connected to control element 14 for the device 8 measuring electric current and being connected to circuit overcurrent protection 18 of phase line.Each mutually in can at switch block 13, be connected in series with this switch block 13,2a, 2b between 2a, 2b and selectable active crowbar circuit for the device 8 measuring electric current.Control element 14 can carry out the normal turn-off function of control switch based on the current measurement result obtained for the device 8 measuring electric current by phase line.Be connected to phase line for measuring the device 8 of electric current and the circuit overcurrent protection 18 being connected to control element 14 can process the current measurement result obtained for the device 8 measuring electric current by phase line, and this circuit overcurrent protection 18 can to control element provide in following information type one of at least: the maximum of the maximum of the absolute value of phase current and the current changing rate of phase current.Control element 14 can use its internal comparator to compare determined maximum and reference value.Then, control element 14 can detect the overcurrent event when determined maximum is greater than reference value.Such as, reference value can be set in graphical user interface 15.
According to execution mode, the current measuring device of active crow bar is connected to control element 14.The current measuring device of active crow bar and the semiconductor switch of active crow bar are connected in series the electric current of the semiconductor switch measured through active crow bar.Control element 14 controls the semiconductor switch of active crow bar based on current measurement result.
According to execution mode, the drive circuit 22 of the semiconductor switch of phase can be connected to control element 14 and between semiconductor switch 2a, 2b of phase.Control element can be configured to the control signal generated to the drive circuit 22 of the semiconductor switch of phase and turn on and off to make semiconductor switch.
According to execution mode, the main switch drive circuit 21 of phase can be connected between control element 14 and the main switch 13 of phase.Control element 14 can be configured to generate the control signal to the main switch drive circuit 21 of phase, to make the contact of main switch 13, and---being mechanical contact in the execution mode of some---moves to open position or make position.
According to execution mode, semiconductor switching device comprises so-called active crow bar 17, and this active crow bar 17 can be used for the current path provided when turning off in overcurrent events for inductive load current.The drive circuit 23 of active crow bar can be connected between control element 14 and active crow bar 17.Then, control element 14 can be configured to the control signal of the drive circuit 23 generated to active crow bar, and this control signal makes the semiconductor switch of active crow bar turn on and off.The benefit of such execution mode is: the energy stored in such shutoff event in the load can be absorbed in the active component of load instead of load energy is only absorbed in overvoltage protection element 9.This can extend the life-span of overvoltage protection element.
Thus, in each phase line, semiconductor switch can comprise two semiconductor switchs 2a, 2b.Some examples of dissimilar suitable semiconductor switch are more than discussed in conjunction with other execution modes.For each semiconductor switch, diode 3a, 3b of being connected in series can also be there is.One mutually in these two diode semiconductor switch to connecting reverse parallel connection, make when semiconductor switch is switched on, namely positive current flows through from source to the electric current of load the diode semiconductor pair comprising the first semiconductor switch 2a and the first diode 3a, and namely negative current flows through another diode semiconductor pair comprising the second semiconductor switch 2b and the second diode 3b from the electric current being loaded to source.Can use such as in conjunction with the overvoltage protection element 9 described by other execution modes as overvoltage protection.These overvoltage protection elements 9 can be connected with main switch 13 and semiconductor switch 2a, 2b the voltage being limited in switch ends in parallel, and absorb the inductive energy of main circuit during current interruptions in overcurrent event.
According to execution mode, semiconductor switch 2a, 2b can all be controlled separately by the semiconductor switch drive circuit 22 comprising driver such as optical coupler drive circuit.In various embodiments, main switch 13 in parallel can be controlled by the main switch drive circuit 21 comprising driver such as optical coupler driver.Optical coupler is used to be useful, this is because optical coupler provides the good voltage between primary side (primary) and primary side (secondary) to isolate and low propagation delay.Can by for measuring voltage device 7 from switch block 2a, 2b, 3a, 3b, 13 both sides---from source (U_nS) and load-side (U_nL)---measuring voltage.Use for measuring the device 8 such as current sensor of electric current to measure the electric current in phase line, this current sensor has good precision, wide frequency bandwidth and good electric current isolation (galvanic isolation) between primary side and primary side.Such as, closed loop hall effect current sensor can be suitable.Circuit overcurrent protection can comprise analog electronics.
According to execution mode, under no-voltage, connection 3 phase semiconductor switching device can be completed when there is no electromagnetic interference according to the method substantially similar to method described in conjunction with Figure 2, but naturally, must make this switching for each phase independence.Semiconductor switch 2a, 2b can be used to complete zero voltage switching, and main switch can be kept to disconnect, as long as all semiconductor switchs are switched on, as combined such as described by Fig. 6 and Fig. 7.Each mutually in---U_nS and U_nL can be called in fig .9---based on the voltage across semiconductor switch polarity connect this semiconductor switch, wherein, S refers to source, and L refers to load, and n refers to each voltage phase.If the voltage across switch is just, the second semiconductor switch 2b of phase is then made to connect (representing with S2, S4, S6 in a block schematic in fig. 9), and if the voltage across switch is negative, then the first semiconductor switch 2a of phase is made to connect (representing with S1, S3, S5 in a block schematic in fig. 9).After connection semiconductor switch, then, diode 3a, 3b of connecting with this semiconductor switch are reverse biased.Therefore, in phase line, there is no current flowing until reversing across the voltage of switch block time.When electric current flows through a semiconductor switch, second half conductor switch of phase is also connected.In 3 phase systems, if be connected to the neutral line, then after one is switched on mutually, the electric current in main circuit starts flowing, and if the neutral line is not connected, then after two are switched on mutually, the electric current in main circuit starts flowing.After all phase lines are switched on, the selectable main switch 13 of all phases is switched on.Thus higher on state voltage due to semiconductor switch makes electric current commutate to the branch of main switch.These principles are shown according to the block diagram of the normal ON logic of expression 3 phase application in Fig. 9.
According to execution mode, shutoff 3 phase semiconductor switching device can be completed under zero current, thus prevent between mechanical contact, producing electric arc when turning off inductive load.Semiconductor switch can be used to complete zero-current switching according to the principle identical with the principle combined above such as described by Fig. 3.In order to realize this effect, first needing by connecting semiconductor switch, phase current to be commutated to this semiconductor switch, and then turning off ultra fast breaker in the mode that the mode applied to the 1 phase AC combined such as illustrated by Fig. 6 with Fig. 7 is similar.In shutoff event, can use phase line for measuring the device 8 of electric current and realizing using the zero-current switching of semiconductor switch for the device 7 of measuring voltage.As combined such as illustrated by Fig. 3, based on the polarity of phase voltage and the polarity of phase current, independently semiconductor switch is turned off for each phase.If one mutually in electric current be that just that is, electric current points to load from source, then make the second semiconductor switch 2b (representing with S2, S4, S6 in the block diagram of Figure 10) shutoff of wherein negative current flowing.If one mutually in electric current be negative, then make the first semiconductor switch 2a (representing with S1, S3, S5 in the block diagram of Figure 10) of wherein flow of positive current turn off.In Fig. 10, phase current is indicated by I_n, and wherein, n refers to each phase, and phase voltage is indicated by U_n, and wherein, n refers to each phase.Now, after a semiconductor switch of phase line is turned off, the electric current in this phase can not interrupt until the reversing of phase current time.Then, still second half conductor switch in the on-state can also be made after the delay of AC half circulation (being called 1/2 grid cycle or half grid cycle in Fig. 10) to turn off.Due to the possible phase difference between electric current and voltage, so shutoff event must be completed when the polarity of phase voltage is identical with the polarity of phase current.Otherwise electric current can be connected again.In 3 phase AC application, if the neutral line is connected, then all be turned off mutually after turn off electric current in main circuit, and if the neutral line is not connected, then after two are turned off mutually, turn off the electric current in main circuit.These principles are shown according to the block diagram of the normal turn-off logic of expression 3 phase application in Figure 10.
Can by the shutoff realized under overcurrent event according to the method for Figure 13.According to execution mode, can based on current value and/or the overcurrent protection having carried out 3 phase AC switches based on current changing rate.According to execution mode, control element 14 can detect 131 overcurrent events based on by the determined current value of device 8 for measuring electric current.Control element can in response to one mutually in the measured value of electric current be greater than scheduled current limit value and carry out detection of excessive current event.In some embodiments, current limit value can be set in user interface such as graphical user interface.User interface can be such as in conjunction with the user interface that other execution mode describes.
According to execution mode, control element 14 can carry out detection of excessive current event based on current changing rate.Control element can in response to one mutually in the measured value of current changing rate be greater than current changing rate limit value to detect 131 overcurrent events.In some embodiments, current changing rate limit value can be set in user interface such as graphical user interface.User interface can be such as in conjunction with the user interface that other execution mode describes.The advantage of carrying out overcurrent protection based on current changing rate is: the abnormal current rate of change that can detect instruction overcurrent under lower over current value; these are a lot of before abnormal current rate of change is in danger level from system perspective, it reduce the stress of parts.Thus, this detection method is more safer than the traditional overcurrent protection based on levels of current, this is because do not reach identical high level to overcurrent during shutoff.In other implementations, both current value and current changing rate can be used for detection of excessive current event.
According to execution mode, after overcurrent event being detected, control element 14 can generate the connection signal of 132 to semiconductor switch 2a, 2b and commutate to semiconductor switch 2a, 2b to make electric current to the cut-off signals of main switch 13.After the scheduled time, when the clearance for insulation between the contact of main switch 13 is abundant, control element 14 can generate the cut-off signals of 133 to semiconductor switch 2a, 2b to interrupt the electric current in main circuit.Sufficient clearance for insulation is when the puncture voltage of clearance for insulation is greater than protection level and the clamp voltage of the overvoltage protection element 9 be connected in parallel with switch block 2a, 2b, 13.After semiconductor switch 2a, 2b are turned off, the voltage across switch block starts to increase due to the inductor in main circuit.When voltage reaches protection level, overvoltage protection element is formed in the low resistance shunt at switch block two ends.Then, energy absorption 134 in the inductor of main circuit is made to be stored in overvoltage protection element 9.In various embodiments, the external series gap of main switch 13 can comprise air or other isolated substances or its combination.
The life-span of overvoltage protection element 9 depends on the energy be absorbed in overvoltage protection element usually.Transition is larger, and the entire life of overvoltage protection element will be shorter.Thus, the remarkable benefit of carrying out overcurrent protection based on current changing rate is: this overcurrent protection detects overcurrent event more quickly than the overcurrent protection of carrying out based on current value, thus makes overcurrent transition much smaller.Thus, this will increase the overvoltage protection element life-span further.
According to execution mode, can so-called active crowbar circuit be used to increase the life-span of overvoltage protection element 9 further in the system that load inductor is relatively large wherein.Figure 11 overcurrent showed in such execution mode when active crow bar as described above is connected turns off the block diagram of logic.Thus, so active crowbar circuit can be connected to load-side.111 overcurrent events can be detected in the mode similar in conjunction with the mode described by other execution modes.Can to turn off semiconductor switching device 1 in conjunction with Figure 13 in the mode that step 132 is similar with the mode described in 133, wherein, such as, step 112 and 113 corresponds to step 132, and step 114 and 115 corresponds to step 133.But, in the execution mode comprising so active crow bar 17, generate to semiconductor switch 2a, 2b of phase line cut-off signals 115 after, then control element 14 can generate the connection signal 116 to the semiconductor switch of active crow bar.Thus, can be absorbed in the active component of load by making load energy but not active crow bar in overvoltage protection element commutates to inductive load current.Load is wherein active load and stores in the execution mode of both inductive energy and mechanical energy, and mechanical energy can maintain by active crow bar or even increase electric current, and this finally can damage semiconductor.In such execution mode, the current measurement circuit 16 of active crow bar can be provided to prevent this situation by the electric current measured through the semiconductor switch of active crow bar 17, and wherein this current measurement circuit 16 can comprise such as current sensor.And the current measurement circuit 16 of active crow bar can be connected to control element 14, this control element 14 can be greater than in response to current value the cut-off signals that predetermined crow bar current limit value generates the semiconductor switch to active crow bar 17.After this, the remainder of load energy can be made to be absorbed in overvoltage protection element 9.
According to another execution mode, can use for driving the optical coupler drive circuit 23 of active crow bar to detect the current value being greater than predetermined crow bar current limit value, wherein, this optical coupler drive circuit 23 comprises the integrated desaturation detection of the semiconductor switch to active crow bar 17, and this optical coupler drive circuit 23 provides malfunction feedback to control element 14 further.This driver can comprise such as IGBT driver, and the voltage of this IGBT driver between the collector electrode and emitter of IGBT is higher than overcurrent event being detected during limit value.According to execution mode, driver can automatically turn off the semiconductor switch of active crow bar in response to the desaturation of the semiconductor switch active crow bar being detected and provide malfunction feedback to control element 14.After receiving fault-signal, then control element can generate the reset signal for activating driver to driver, and again can connect the semiconductor switch of active crow bar when needed.The benefit of this execution mode is: such as, by using such optical coupler drive circuit, can save the current measurement circuit 16 of active crow bar, but figure 8 illustrates both optical coupler drive circuit and current measurement circuit 16.
Figure 12 schematically shows the execution mode of the semiconductor switching device for 3 phase AC circuit, and this execution mode can be such as similar to the execution mode shown in Fig. 8, but comprises series connection isolating switch 24 mutually for each.Such as, such switch may be used for the electric current isolation of switchgear to guarantee the electrical safety during maintenance work.According to some execution mode, such series connection isolating switch 24 can be provided in any execution mode in the above-described embodiment.
Those skilled in that art are apparent that along with technological progress the present invention design can realize in every way.The present invention and execution mode thereof are not limited to example described above and can change within the scope of the claims.
Claims (15)
1. for a semiconductor switching device for commutation circuit, wherein, described switchgear comprises mutually for each electric current:
First semiconductor switch and the second semiconductor switch, described first semiconductor switch and described second semiconductor switch can be controlled to arbitrarily turn on and off;
First diode and the second diode, described first diode and described second diode are for controlling available current path;
For from the input line of described semiconductor switch and the device of output line measuring voltage;
For measuring the device of electric current, itself and described semiconductor switch in series arrange the electric current measuring phase line; And
Control element, its order being configured to turn on and off in response to the described circuit of connection by controlling described semiconductor switch in response to voltage measurements and current measurement result is connected described semiconductor switching device and under zero-current point, is turned off described semiconductor switch in response to the order turning off described circuit under no-voltage point.
2. semiconductor switching device according to claim 1, wherein, described first semiconductor switch and described second semiconductor switch of described semiconductor switching device are connected in series, and described first diode and described second diode comprise the internal body diodes of described semiconductor switch and be used to control described available current path.
3. semiconductor switching device according to claim 1, wherein, described first semiconductor switch of described semiconductor switching device is connected in parallel with described second semiconductor switch, described first diode and described first semiconductor switch are connected in series, and described second diode and described second semiconductor switch are connected in series, make the forward bias direction of described first diode and described second diode to described Diode series the forward bias direction of internal body diodes of the first corresponding semiconductor switch of being connected and the second semiconductor switch contrary.
4. semiconductor switching device according to any one of claim 1 to 3, wherein, described semiconductor switching device also comprises main switch, and described main switch and described semiconductor switch are connected to realize lower on-state loss in the on-state in parallel.
5. semiconductor switching device according to any one of claim 1 to 4, wherein, described circuit is 3 phase AC circuit.
6. semiconductor switching device according to any one of claim 1 to 4, wherein, described circuit is 1 phase AC circuit.
7. semiconductor switching device according to any one of claim 1 to 6, wherein, described semiconductor switching device also comprises overvoltage protection element mutually for each.
8. semiconductor switching device according to any one of claim 1 to 7, wherein, described semiconductor switching device also comprises active crow bar.
9. semiconductor switching device according to any one of claim 1 to 8, wherein, described semiconductor switching device also comprises the series connection isolating switch for electric current isolation mutually for each electric current.
10. semiconductor switching device according to any one of claim 1 to 9, wherein, described control element is configured to:
The polarity of phase voltage is detected in response to the order of connecting described circuit;
Make with back-biased described Diode series the described semiconductor switch that is connected connect as conducting state; And
Change in polarity in response to described phase voltage makes to connect as conducting state with the described semiconductor switch be connected during original detected polarity of voltage forward biased described Diode series.
11. semiconductor switching device according to any one of claim 1 to 9, wherein, described control element is configured to:
The polarity of phase voltage and the polarity of phase current is detected in response to the order turning off described circuit;
Polarity in response to described phase voltage is identical with the polarity of described phase current make with back-biased described Diode series the semiconductor switch that is connected turn off; And
From turn off to have passed through second half conductor switch be substantially equal to the AC semi-cyclic time after still described semiconductor switch is in the on-state turned off as nonconducting state.
12. semiconductor switching device according to any one of claim 7 to 9, wherein, described control element is configured to:
One of at least carry out detection of excessive current event in response in following situation: one mutually in the measured value of electric current be greater than scheduled current limit value; And one mutually in the measured value of current changing rate be greater than current changing rate limit value;
Generate the connection signal of extremely described semiconductor switch and commutate to described semiconductor switch to the cut-off signals of described main switch to make electric current;
The cut-off signals of extremely described semiconductor switch is generated to interrupt the electric current in main circuit after the scheduled time;
Make to be stored in energy absorption in the inductor of main circuit after electric current in main circuit is interrupted in described overvoltage protection element.
13. 1 kinds of methods for the electric current in commutation circuit, described circuit comprises semiconductor switching device, described semiconductor switching device comprises the first semiconductor switch, the second semiconductor switch, the first diode, the second diode, for from the input line of described semiconductor switch and the device of output line measuring voltage and the device for measuring electric current, described method comprises:
The polarity of phase voltage is detected in response to the order of connecting described circuit;
Make with back-biased Diode series the semiconductor switch that is connected connect as conducting state; And
Change in polarity in response to described phase voltage makes to connect as conducting state with the semiconductor switch be connected during original detected polarity of voltage forward biased described Diode series.
14. methods according to claim 13, described method also comprises:
The polarity of phase voltage and the polarity of phase current is detected in response to the order turning off described circuit;
Polarity in response to described phase voltage is identical with the polarity of described phase current make with back-biased described Diode series the semiconductor switch that is connected turn off; And
From turn off to have passed through second half conductor switch be substantially equal to the AC semi-cyclic time after still described semiconductor switch is in the on-state turned off as nonconducting state.
15. methods according to claim 13 or 14, wherein, described semiconductor switch also comprises overvoltage protection element, and described method also comprises:
One of at least carry out detection of excessive current event in response in following situation: one mutually in the measured value of electric current be greater than scheduled current limit value; And one mutually in the measured value of current changing rate be greater than current changing rate limit value;
Generate the connection signal of extremely described semiconductor switch and commutate to described semiconductor switch to the cut-off signals of main switch to make electric current;
The cut-off signals of extremely described semiconductor switch is generated to interrupt the electric current in main circuit after the scheduled time;
Make to be stored in energy absorption in the inductor of main circuit after electric current in main circuit is interrupted in described overvoltage protection element.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/FI2012/051306 WO2014102443A1 (en) | 2012-12-28 | 2012-12-28 | Semiconductor switch arrangement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104885363A true CN104885363A (en) | 2015-09-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280078041.1A Pending CN104885363A (en) | 2012-12-28 | 2012-12-28 | Semiconductor switch arrangement |
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| Country | Link |
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| CN (1) | CN104885363A (en) |
| WO (1) | WO2014102443A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110663180A (en) * | 2017-06-02 | 2020-01-07 | 通用电器技术有限公司 | Switching device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL3435502T3 (en) * | 2017-07-25 | 2022-11-28 | Kone Corporation | Electronic ciruit comprising a switching means |
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| EP1005161A1 (en) * | 1998-11-27 | 2000-05-31 | STMicroelectronics SA | Control circuit for a semiconductor switch for AC voltages |
| US20040222701A1 (en) * | 2003-04-03 | 2004-11-11 | Kugelman Michael M. | Solid state relay for switching AC power to a reactive load and method of operating the same |
| US20080151451A1 (en) * | 2006-12-26 | 2008-06-26 | Hamilton Sundstrand Corporation | Asymmetric fault detection and protection with AC solid state power controllers |
| CN101882927A (en) * | 2010-07-01 | 2010-11-10 | 西北工业大学 | Soft switch device of alternating current solid-state power controller |
| US20110102052A1 (en) * | 2009-09-14 | 2011-05-05 | Electronic Systems Protection, Inc. | Hybrid Switch Circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201752109U (en) * | 2010-07-01 | 2011-02-23 | 西北工业大学 | Soft switch device of alternating current solid-state power controller |
-
2012
- 2012-12-28 CN CN201280078041.1A patent/CN104885363A/en active Pending
- 2012-12-28 WO PCT/FI2012/051306 patent/WO2014102443A1/en active Application Filing
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|---|---|---|---|---|
| EP1005161A1 (en) * | 1998-11-27 | 2000-05-31 | STMicroelectronics SA | Control circuit for a semiconductor switch for AC voltages |
| US20040222701A1 (en) * | 2003-04-03 | 2004-11-11 | Kugelman Michael M. | Solid state relay for switching AC power to a reactive load and method of operating the same |
| US20080151451A1 (en) * | 2006-12-26 | 2008-06-26 | Hamilton Sundstrand Corporation | Asymmetric fault detection and protection with AC solid state power controllers |
| US20110102052A1 (en) * | 2009-09-14 | 2011-05-05 | Electronic Systems Protection, Inc. | Hybrid Switch Circuit |
| CN101882927A (en) * | 2010-07-01 | 2010-11-10 | 西北工业大学 | Soft switch device of alternating current solid-state power controller |
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| CN110663180A (en) * | 2017-06-02 | 2020-01-07 | 通用电器技术有限公司 | Switching device |
| CN110663180B (en) * | 2017-06-02 | 2023-07-28 | 通用电器技术有限公司 | Switching device |
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|---|---|
| WO2014102443A1 (en) | 2014-07-03 |
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