KR20130127082A - Sscb circuit for high speed breaking current - Google Patents
Sscb circuit for high speed breaking current Download PDFInfo
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- KR20130127082A KR20130127082A KR1020120050718A KR20120050718A KR20130127082A KR 20130127082 A KR20130127082 A KR 20130127082A KR 1020120050718 A KR1020120050718 A KR 1020120050718A KR 20120050718 A KR20120050718 A KR 20120050718A KR 20130127082 A KR20130127082 A KR 20130127082A
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- thyristor
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- 239000003990 capacitor Substances 0.000 claims description 72
- 230000000903 blocking effect Effects 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 101100503482 Arabidopsis thaliana FTSH5 gene Proteins 0.000 description 13
- 101150082136 VAR1 gene Proteins 0.000 description 13
- 101000800116 Homo sapiens Thy-1 membrane glycoprotein Proteins 0.000 description 11
- 102100033523 Thy-1 membrane glycoprotein Human genes 0.000 description 11
- 230000001052 transient effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electronic Switches (AREA)
- Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
Abstract
The present invention eliminates the factors affecting the breaking current for turning off the thyristor inside the SSCB and operates the microgrid alone during the three-phase power line connection of both systems through the SSCB circuit. The present invention relates to an SSCB circuit that can be improved to make it possible to reliably and quickly disconnect the two power line connections.
Description
The present invention relates to a solid state circuit breaker (SSCB) circuit, and in particular, to provide a circuit breaker using the SSCB in preparation for an accident that may occur while connecting three-phase power lines of both systems through the SSCB circuit. The present invention relates to an SSCB circuit that can remove the factors affecting the blocking current for turning off the Lister and can be applied to a single operation of the microgrid to perform a stable and fast disconnection of both power line connections.
SSCB circuits can be used to connect a power system and a load or other power system (eg, microgrid, etc.) to power or cut power from one side to the other. Like Korea Utility Model Registration No. 20-0264800, thyristors are used in such SSCB circuits, which supply power quickly in the event of an accident or failure while connecting one power system with the other load or the other power system. The circuit thruster should be turned off immediately to prevent the connection of power lines on both sides.
In the existing SSCB circuit technology, a forced commutation method for turning off the power supply thyristor is used for fast circuit disconnection, but due to a transient voltage increase that may occur during a transient state, a circuit connected thereto is used. Fields or equipment will fail. In addition, there are factors affecting the breaking current required in the process of forcing the thyristor, which makes it difficult to break the circuit quickly, and the connection between the power grid and the microgrid is a problem of voltage difference between both ends. It is difficult to apply to single operation.
Accordingly, an object of the present invention is to solve the above-described problem, and an object of the present invention is to eliminate the factors affecting the breaking current required for the thyristor turn-off operation of the SSCB for quickly shutting off a three-phase power line system. In addition, the present invention provides an SSCB circuit that can be stably and quickly disconnected from both power line connection circuits by improving to be applicable to a single operation of a microgrid.
First, to summarize the features of the present invention, according to an aspect of the present invention for achieving the object of the present invention, SSCB (Solid for controlling the connection and disconnection of the three-phase power line between the first system and the second system A state circuit breaker circuit includes: a first varistor, a first forward thyristor, and a first reverse thyristor connected in parallel between a first contact of a first system and a second contact of a second system; A first IGBT, a second varistor, and a first capacitor connected in series between a third contact of the first system and the first contact; A second forward thyristor connected between the contact point of the second varistor and the first capacitor and the second contact point; A second IGBT, a third varistor, and a second capacitor connected in series between the fourth contact and the second contact of the second system; And a second reverse thyristor connected between the first contact point and the contacts of the third varistor and the second capacitor.
Operating the first forward thyristor and the first reverse thyristor to connect the first contact point and the second contact point, and operating the second forward thyristor and the second reverse thyristor to operate the first contact point. And disconnect the connection between the second contact and the second contact, and the first IGBT and the second IGBT are turned off.
In addition, according to another aspect of the invention, the solid state circuit breaker (SSCB) circuit for controlling the connection and disconnection of the three-phase power line between the first system and the second system, the first contact and the second system of the first system A first varistor, a first forward thyristor, and a first reverse thyristor connected in parallel between the second contacts of the first varistor; A first diode, a second varistor, and a first capacitor connected in series between the third contact and the first contact of the first system; A first IGBT connected between the contact point of the second varistor and the first capacitor and the second contact point; A second diode, a third varistor, and a second capacitor connected in series between the fourth contact and the second contact of the second system; And a second IGBT connected between the first contact point and a contact point of the third varistor and the second capacitor.
Operating the first forward thyristor and the first reverse thyristor to connect between the first contact point and the second contact point, and operating the first IGBT and the second IGBT point to operate the first contact point and the second contact point point; The connection between the contacts is cut off, and when the blocking is performed, the first IGBT and the second IGBT are turned on for a predetermined time.
In addition, according to another aspect of the invention, the solid state circuit breaker (SSCB) circuit for controlling the connection and disconnection of the three-phase power line between the first system and the second system, the first contact and the second of the first system A first forward thyristor, a first reverse thyristor, and a series circuit of the first varistor and a power switch connected in parallel between a second contact of the system; A first diode, a second varistor, and a first capacitor connected in series between the third contact and the first contact of the first system; A second forward thyristor connected between the contact point of the second varistor and the first capacitor and the second contact point; A second diode, a third varistor, and a second capacitor connected in series between the fourth contact and the second contact of the second system; And a second reverse thyristor connected between the first contact point and the contacts of the third varistor and the second capacitor.
And, according to another aspect of the present invention, the solid state circuit breaker (SSCB) circuit for controlling the connection and disconnection of the three-phase power line between the first system and the second system, the first contact and the internal contact of the first system A first varistor, a first forward thyristor, and a first reverse thyristor connected in parallel therebetween; A power switch connected between the internal contact point and a second contact point of a second system; A first diode, a second varistor, and a first capacitor connected in series between the third contact and the first contact of the first system; A second forward thyristor connected between the contact point of the second varistor and the first capacitor and the internal contact point; A second diode, a third varistor, and a second capacitor connected in series between the fourth contact of the second system and the internal contact; And a second reverse thyristor connected between the first contact point and the contacts of the third varistor and the second capacitor.
Operating the first forward thyristor and the first reverse thyristor to connect the first contact point to the second contact point, wherein the power switch is turned on during the connection, and the second forward thyristor and the A second reverse thyristor is operated to cut off the connection between the first contact point and the second contact point.
According to the SSCB circuit according to the present invention, the control of the IGBT suppresses the transient transient voltage increase effect that can be applied to the SSCB circuit, thereby eliminating the factor on the breaking current forcing the thyristor to cut off the connection of both power lines. In addition, the control of the IGBT, which provides the thyristor breaking current, can control the breaking current required in the thyristor so that both power line connections can be quickly disconnected.
When the power system and the microgrid are not connected, the power switch is operated even in a problem of voltage difference between both ends, so that the microgrid can be applied to the single operation of the microgrid.
1 is a view for explaining an SSCB circuit according to an embodiment of the present invention.
2 is a view for explaining an example of the voltage waveform and the switch control signals between the signal contacts of FIG.
3 is an SSCB circuit between signal contacts of phase A of three phases according to an embodiment of the present invention.
4 is an SSCB circuit between signal contacts of phase B of three phases according to an embodiment of the present invention.
5 is an SSCB circuit between signal contacts of the C phase of the three phases according to an embodiment of the present invention.
6 is an SSCB circuit between signal contacts of phase A of three phases according to another embodiment of the present invention.
FIG. 7 is a diagram for explaining the voltage waveform of phase A in the case where the voltage difference between both ends of the SSCB circuit rises sharply.
8 is an SSCB circuit between signal contacts of phase A of three phases according to another embodiment of the present invention.
9 is an SSCB circuit between signal contacts of phase A of three phases according to another embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.
1 is a view for explaining the
Referring to FIG. 1, an
For example, each power line of one system of three phases A, B, and C having a line voltage of 380 V as a phase voltage of 220 V is connected to the contacts A1, B1, C1 of the
For example, when the contacts A1, B1 and C1 are connected to the contacts A2, B2 and C2, respectively, and the connections are disconnected due to an accident or a failure, as shown in FIG. If the breakdown current (I2) of the SSCB due to an accident or failure to look at, when the connection is disconnected in the past by the generation of a reverse voltage in the charging capacitor (see CA1, CA2 of Figure 3) varistor for charging the capacitor (VAR1, The current flowing through VAR2 is added to the breaking current for the commutation of the main thyristor (see THY1, THY3 in Fig. 3) flowing through the auxiliary thyristor (see THY2, THY4 in Fig. 3). As a result, there was a problem that the circuit breaker was delayed as in the conventional I2 in FIG.
In the present invention, the switch control signals S11, S21, S12, S22, for turning on / off the thyristor, IGBT, etc., which are provided in the
3 is an
4 is an
5 is an
3, 4, and 5, the circuit configuration between the contacts A1, B1, C1 of one system and the contacts A2, B2, C2 of the other system is similar, except that a few of the contacts are used. There is a difference. Therefore, the operation will be described based on the circuit configuration between the contacts A1 and A2 as shown in FIG. 3. Accordingly, those skilled in the art will be able to understand the operation of the circuits of FIGS. 4 and 5 well.
As shown in FIG. 3, the
Here, in the inter-system connection, the forward thyristor THY1 and the reverse thyristor THY3 are operated (turned on) and the other switches are stopped (turned off) by the control signals S11 and S21. (E.g., A1 and A2 in FIG. 3). Given that the charging capacitors CA1 / CA2 are charged to 300 V via the varistors VAR1 / VAR2 during the grid-to-grid connection, the rating of the varistors VAR1 / VAR2 is, for example, the line voltage between A1-C1 (e.g. 380V) may be designed to 240V (540-300V). The rating of the varistor VAR3 may be designed to a maximum of a phase voltage (eg, 220V) (eg, 312V).
When the system is disconnected from each other, the forward thyristor THY2 and the reverse thyristor THY4 are turned on (turned on) and the other switches are turned off (turned off) by the control signals S12 and S22. For example, in Figure 3 it can be made by blocking the connection of A1, A2). However, in this blocking, reverse voltage may be generated in the capacitor CA1 / CA2 due to the conduction of the thyristor THY2 / THY4. Accordingly, if the IGBTs IGBT1 / IGBT1 are not present, the contact voltage C1 / C2 may be removed. In order to prevent the reverse current from being added to the auxiliary thyristor THY2 / THY4 through the conduction of the varistors VAR1 / VAR2 so that the breaking current for commutating the main thyristor THY1 / THY3 is continuously supplied. The IGBTs IGBT1 / IGBT1 are turned off by the control signals S13 / S23 when the system is disconnected from each other. Accordingly, it is possible to reduce the blocking delay time as I2 of the present invention of FIG.
In FIG. 2, the graph of the present invention 2 is a case where the capacitance of the capacitors CA1 / CA2 is relatively greater than the current that can flow in the SSCB, and thus a relatively large amount of charge is stored during the inter-system connection. The graph corresponds to the case where the capacitance of the capacitors CA1 / CA2 is adequate and stored the necessary amount of charge during the inter-system connection. The capacitance value of the capacitors CA1 / CA2 may be appropriately designed in consideration of the delay time of the blocking current of I2.
Here, a varistor is a non-linear semiconductor resistance element whose resistance value is changed by voltages applied at both ends thereof, and a thyristor (silicon controlled rectifier (SCR)) is applied by applying a current to a gate to turn on a continuous gate current. It is a semiconductor switch that is turned off when a reverse current is applied between the positive electrode and the negative electrode or the current drops below a holding currrent even without supply of. In addition, an Insulated Gate Bipolar Transistor (IGBT) corresponds to a semiconductor switch that can be turned on by applying a current to the gate and turning it off by applying a reverse current to the gate.
6 is an
Referring to FIG. 6, the
Here, in the inter-system connection, the forward thyristor THY1 and the reverse thyristor THY3 are operated (turned on) and the other switches are stopped (turned off) by the control signals S11 and S21. (E.g., A1 and A2 in FIG. 3).
When disconnecting the grid, the IGBT (IGBT1) and the IGBT (IGBT2) are turned on (turned on) and the other switches are turned off (turned off) by the control signals (S12 / S22). By blocking the connection of A1, A2). However, in the case of such a blocking, when the thyristors THY2 / THY4 are used instead of the IGBTs IGBT1 / IGBT2 as shown in FIG. 3, the blocking current immediately occurs due to commutation problems of the corresponding thyristors THY2 / THY4. IGBTs (IGBT1 / IGBT2) are applied by control signals (S12 / S22) at the time of disconnection between grids in order to prevent the current from being commutated and to delay the blocking current of the SSCB as in the conventional I2 of FIG. According to the commutation characteristic of the thyristor THY1 / THY3, the device is turned on (not shown in FIG. 2) only for a predetermined time (eg, tq = 200 A / μsec). Accordingly, it is possible to reduce the blocking delay time as I2 of the present invention of FIG.
In this case, even when the capacitance value of the capacitors CA1 / CA2 is relatively large, the cutoff time may be reduced as shown in FIG. 2.
Here, in order to add the effect as shown in FIG. 3, it is also possible to replace the IGBTs in place of the diodes D1 / D2 and control the IGBTs as described in FIG. 3.
On the other hand, when the SSCB form of Figures 3 to 6 as described above is applied to connect or disconnect between one KEPCO power system and a microgrid that can be operated independently as the other power system, as shown in FIG. In order to protect the thyristors, two times the maximum voltage (eg, 312V) of the phase voltage (eg, 220V) may be applied to both ends of the varistor (VAR3), so that a varistor (VAR3) having twice the rated voltage should be used. do. In this case, there is a problem in that the thyristors are not adequately protected from transient transient voltage rise due to the change in current (-di / dt) that occurs when the circuit is cut off.
In order to solve such a problem, as shown in FIG. 8 or 9, the
Referring to FIG. 8, the
Here, in order to add an effect as shown in FIG. 3 or 6, instead of the diodes D1 / D2, the IGBTs may be replaced at the position, and the IGBTs may be controlled as described in FIG. 3, and the thyristor THY2 / THY4 may be used. May be replaced with IGBTs in place and control the IGBTs as described in FIG.
In addition, referring to FIG. 9, the
Here, in order to add the same effect as in FIG. 3 or 6, instead of the diodes D1 / D2, IGBTs may be replaced at the positions, and the IGBTs may be controlled as described in FIG. 3, and the thyristor THY2 / THY4 may be used. May be replaced with IGBTs in place and control the IGBTs as described in FIG.
8 and 9, when the systems are connected, the forward thyristor THY1 and the reverse thyristor THY3 are operated (turned on) and the power switch SW is turned on by the control signals S11 and S21. The operation of the remaining switches can be achieved by connecting the contacts (eg, A1 and A2 in FIG. 3) by stopping (turning off).
In both connection processes, as shown in FIG. 7, twice the phase voltage (eg, 220V) maximum value (eg, 312V) may be applied to both ends of the varistor VAR3 for protecting the thyristors. Varistor VAR3 with voltage should be used. In this case, there is a problem in that the thyristors are not adequately protected from transient transient voltage rise due to the change in current (-di / dt) that occurs when the circuit is cut off.
When the system is disconnected from each other, the forward thyristor THY2 and the reverse thyristor THY4 are turned on (turned on) and the other switches are turned off (turned off) by the control signals S12 and S22. For example, it can be achieved by breaking the connection of A1 and A2). However, at the time of such cutoff, as shown in FIG. 7, a double voltage of a phase voltage (eg, 220V) maximum value (eg, 312V) may be applied to both ends of the varistor VAR3 to protect the thyristor. Since VAR3) is conducting and cannot be disconnected between systems by the SSCB, the power switch SW is turned off to prevent this.
As described above, the present invention has been described by way of limited embodiments and drawings, but the present invention is not limited to the above embodiments, and those skilled in the art to which the present invention pertains various modifications and variations from such descriptions. This is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.
VAR1, VAR2, VAR3: Varistors
THY1, THY2, THY3, THY4: Thyristor
IGBT1, IGBT1, IGBT1, IGBT1: Insulated Gate Bipolar Transistor (IGBT)
CA1, CA1: Capacitor
D1, D2: Diode
SW: Power Switch
Claims (7)
A first varistor, a first forward thyristor, and a first reverse thyristor connected in parallel between a first contact of the first system and a second contact of the second system;
A first IGBT, a second varistor, and a first capacitor connected in series between a third contact of the first system and the first contact;
A second forward thyristor connected between the contact point of the second varistor and the first capacitor and the second contact point;
A second IGBT, a third varistor, and a second capacitor connected in series between the fourth contact and the second contact of the second system; And
A second reverse thyristor connected between the first contact point and the contacts of the third varistor and the second capacitor;
SSCB circuit comprising a.
Operating the first forward thyristor and the first reverse thyristor to connect between the first contact point and the second contact point,
Operating the second forward thyristor and the second reverse thyristor to disconnect a connection between the first contact point and the second contact point,
And turning off the first IGBT and the second IGBT upon the blocking.
A first varistor, a first forward thyristor, and a first reverse thyristor connected in parallel between a first contact of the first system and a second contact of the second system;
A first diode, a second varistor, and a first capacitor connected in series between the third contact and the first contact of the first system;
A first IGBT connected between the contact point of the second varistor and the first capacitor and the second contact point;
A second diode, a third varistor, and a second capacitor connected in series between the fourth contact and the second contact of the second system; And
A second IGBT connected between the first contact point and a contact point of the third varistor and the second capacitor;
SSCB circuit comprising a.
Operating the first forward thyristor and the first reverse thyristor to connect between the first contact point and the second contact point,
By operating the first IGBT and the second IGBT to cut off the connection between the first contact and the second contact,
And the first IGBT and the second IGBT are turned on for a predetermined time during the blocking.
A first forward thyristor, a first reverse thyristor, and a series circuit of a first varistor and a power switch connected in parallel between a first contact of a first system and a second contact of a second system;
A first diode, a second varistor, and a first capacitor connected in series between the third contact and the first contact of the first system;
A second forward thyristor connected between the contact point of the second varistor and the first capacitor and the second contact point;
A second diode, a third varistor, and a second capacitor connected in series between the fourth contact and the second contact of the second system; And
A second reverse thyristor connected between the first contact point and the contacts of the third varistor and the second capacitor;
SSCB circuit comprising a.
A first varistor, a first forward thyristor, and a first reverse thyristor connected in parallel between the first contact and the internal contact of the first system;
A power switch connected between the internal contact point and a second contact point of a second system;
A first diode, a second varistor, and a first capacitor connected in series between the third contact and the first contact of the first system;
A second forward thyristor connected between the contact point of the second varistor and the first capacitor and the internal contact point;
A second diode, a third varistor, and a second capacitor connected in series between the fourth contact of the second system and the internal contact; And
A second reverse thyristor connected between the first contact point and the contacts of the third varistor and the second capacitor;
SSCB circuit comprising a.
Operating the first forward thyristor and the first reverse thyristor to connect between the first contact point and the second contact point,
When the connection is turned on the power switch,
Operating the second forward thyristor and the second reverse thyristor to disconnect a connection between the first contact point and the second contact point,
SSCB circuit, characterized in that for turning off the power switch.
Priority Applications (1)
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KR1020120050718A KR20130127082A (en) | 2012-05-14 | 2012-05-14 | Sscb circuit for high speed breaking current |
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KR1020120050718A KR20130127082A (en) | 2012-05-14 | 2012-05-14 | Sscb circuit for high speed breaking current |
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KR1020120050718A KR20130127082A (en) | 2012-05-14 | 2012-05-14 | Sscb circuit for high speed breaking current |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107196631A (en) * | 2017-05-16 | 2017-09-22 | 深圳市盛弘电气股份有限公司 | A kind of system and method for being forced shutdown IGCT |
CN114284986A (en) * | 2021-12-14 | 2022-04-05 | 中国船舶重工集团公司第七0四研究所 | Ladder bridge type bipolar solid-state circuit breaker |
-
2012
- 2012-05-14 KR KR1020120050718A patent/KR20130127082A/en not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107196631A (en) * | 2017-05-16 | 2017-09-22 | 深圳市盛弘电气股份有限公司 | A kind of system and method for being forced shutdown IGCT |
CN107196631B (en) * | 2017-05-16 | 2021-03-23 | 深圳市盛弘电气股份有限公司 | System and method for forcibly turning off thyristor |
CN114284986A (en) * | 2021-12-14 | 2022-04-05 | 中国船舶重工集团公司第七0四研究所 | Ladder bridge type bipolar solid-state circuit breaker |
CN114284986B (en) * | 2021-12-14 | 2024-03-01 | 中国船舶重工集团公司第七0四研究所 | Ladder bridge type bipolar solid-state circuit breaker |
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