CN104882427B - 一种塑封式ipm模块电气连接结构 - Google Patents

一种塑封式ipm模块电气连接结构 Download PDF

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CN104882427B
CN104882427B CN201410069246.4A CN201410069246A CN104882427B CN 104882427 B CN104882427 B CN 104882427B CN 201410069246 A CN201410069246 A CN 201410069246A CN 104882427 B CN104882427 B CN 104882427B
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吴磊
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Xi'an Zhongche Yongji Electric Co Ltd
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Abstract

本发明公开了一种塑封式IPM模块电气连接结构，该结构通过采用导电薄膜作为芯片的载体，节省了引线框架作为载体部分的结构，优化引线框架的设计。同时将功率芯片与驱动芯片设置于导电薄膜上的同一高度，有效减小芯片间的距离，便于导电薄膜与芯片间的电气连接。通过采用银浆将芯片粘贴于导电薄膜上，省略了芯片的焊接和引线键合的工艺步骤，能够有效地提高模块的生产效率；且由于芯片与导电薄膜间为面接触，增大了接触面积，保证产品的通流能力、可靠性、稳定性和安全性，提高模块质量与使用寿命。此外，由于导电薄膜为柔软材质，因此引线框架不必设计为折弯结构，这样可以降低整个模块的生产成本。且导电薄膜厚度较薄，散热性能较好。

Description

一种塑封式IPM模块电气连接结构
技术领域
本发明属于塑封式IPM生产制造领域，具体涉及一种塑封式IPM模块电气连接结构。
背景技术
塑封式IPM（Intelligent Power Module，智能功率模块），是将IGBT（绝缘栅双极型晶体管）芯片及其驱动电路、控制电路和过流、欠压、短路、过热等保护电路集成于一体的新型控制模块。它是一种复杂、先进的功率模块，能自动实现过流、欠压、短路和过热等复杂保护功能，因而具有智能特征。同时它具有低成本、小型化、高可靠、易使用等优点，广泛应用于变频家电、逆变电源、工业控制等领域，社会效益和经济效益十分可观。
对于普通的塑封式IPM来说，它的内部是由引线框架、芯片、键合线组成的。在应用中，芯片的焊接、引线的键合都是严重制约产品成品率和生产效率的因素。目前在塑封式IPM模块中所广泛应用的是将IGBT、二极管和驱动芯片通过焊接的方式贴在引线框架上，再通过键合线完成他们之间的电气连接，最后再进行注塑。该方式在使用时存在以下问题：
（1）IGBT、二极管和驱动芯片焊接固定于引线框架上，焊接工艺比较复杂，且引线框架厚度较大，不利于芯片的散热，长时间过热使用易造成芯片的损坏，增加使用成本。
（2）因为芯片上表面之间的电气连接一般是通过键合线连接起来的，但塑封式IPM中功率芯片（包括IGBT、二极管芯片）和驱动芯片所处的高度不同，而且驱动芯片与功率芯片的距离较远，这样不仅增大了键合的难度，而且增加了键合线失效的风险，可靠性、通流能力较差。
（3）驱动芯片与IGBT、二极管芯片的键合距离较远，在注塑时由于注塑料的流动有可能会破坏键合线。
（4）引线框架作为芯片的载体需对其进行折弯操作，由于引线框架材质较硬，折弯工艺会增加引线框架的材料成本。
因此，鉴于以上问题，有必要提出一种新型的塑封式IPM模块电气连接结构，可以有效地优化引线框架的设计，减小芯片间的距离，同时省略芯片焊接和引线键合的工艺步骤，提高生产效率，有效保证产品的通流能力、可靠性、稳定性和安全性。
发明内容
有鉴于此，本发明提供了一种塑封式IPM模块电气连接结构，以实现优化引线框架的设计，减小芯片间的距离，同时省略芯片焊接和引线键合的工艺步骤，提高生产效率，有效地保证产品的通流能力、可靠性、稳定性和安全性的目的。
根据本发明的目的提出的一种塑封式IPM模块电气连接结构，包括引线框架、IGBT芯片、二极管芯片与驱动芯片，该结构还包括导电薄膜，所述导电薄膜为上下设置的两层，所述IGBT芯片、二极管芯片与驱动芯片均设置于所述两层导电薄膜之间，上层导电薄膜的两端固定连接于所述引线框架上；
下层导电薄膜用于承载固定所述IGBT芯片、二极管芯片与驱动芯片，所述上层导电薄膜用于所述IGBT芯片、二极管芯片、驱动芯片以及引线框架间的电气连接。
优选的，所述导电薄膜与所述IGBT芯片、二极管芯片、驱动芯片以及引线框架间均通过银浆贴合固定。
优选的，所述导电薄膜包括内部电路以及外部薄膜，所述外部薄膜为绝缘材料。
优选的，所述下层导电薄膜的底部还设置有导热绝缘层与散热片。
与现有技术相比，本发明公开的塑封式IPM模块电气连接结构的优点是：该结构通过采用导电薄膜作为芯片的载体，节省了引线框架作为载体部分的结构，优化引线框架的设计。同时将功率芯片与驱动芯片设置于导电薄膜上的同一高度，有效减小芯片间的距离，便于导电薄膜与芯片间的电气连接。通过采用银浆将芯片粘贴于导电薄膜上，省略了芯片的焊接和引线键合的工艺步骤，能够有效地提高模块的生产效率；且由于芯片与导电薄膜间为面接触，增大了接触面积，保证产品的通流能力、可靠性、稳定性和安全性，提高模块质量与使用寿命。
此外，由于导电薄膜为柔软材质，因此引线框架不必设计为折弯结构，这样可以降低整个模块的生产成本。且导电薄膜厚度较薄，散热性能较好。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中塑封式IPM模块电气连接结构的示意图。
图2为本发明公开的塑封式IPM模块电气连接结构的示意图。
图中的数字或字母所代表的相应部件的名称：
1、引线框架 2、上层导电薄膜 3、下层导电薄膜 4、IGBT芯片 5、二极管芯片 6、驱动芯片 7、导热绝缘层 8、散热片 9、键合线
具体实施方式
目前，在塑封式IPM模块中所广泛应用的是将IGBT、二极管和驱动芯片通过焊接的方式贴在引线框架上，再通过键合线完成他们之间的电气连接，最后再进行注塑。焊接工艺比较复杂，且引线框架厚度较大，不利于芯片的散热。驱动芯片与功率芯片所处的高度不同，键合难度较大。另外，引线键合稳定性较差，注塑时易损坏，增加了键合线失效的风险。可靠性、通流能力较差。此外，引线框架需要折弯处理，工作效率较低，同时增加了生产成本。
本发明针对现有技术中的不足，本发明提供了一种塑封式IPM模块电气连接结构，以实现优化引线框架的设计，减小驱动芯片与功率芯片间的距离，同时省略芯片焊接和引线键合的工艺步骤，提高生产效率，有效地保证产品的通流能力、可靠性、稳定性和安全性的目的。
下面将通过具体实施方式对本发明的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
如图2所示，一种塑封式IPM模块电气连接结构，包括引线框架1、IGBT芯片4、二极管芯片5与驱动芯片6，该结构还包括导电薄膜，导电薄膜为上下设置的两层，IGBT芯片4、二极管芯片5与驱动芯片6均设置于两层导电薄膜之间，上层导电薄膜2的两端固定连接于引线框架1上。
下层导电薄膜3用于承载固定IGBT芯片4、二极管芯片5与驱动芯片6，导电薄膜与IGBT芯片、二极管芯片、驱动芯片以及引线框架均通过银浆贴合固定。通过选用导电薄膜替代引线框架或DBC板等作为芯片的载体，再将导电薄膜以同样的方式贴合在引线框架上，这样的电气连接是面接触的方式，而且导电薄膜相比较引线框架和DBC板的厚度要薄很多，因此散热效果相对较好。
同时，可将功率芯片与驱动芯片设置于下层导电薄膜上的同一高度，有效减小芯片间的距离。芯片的底部通过采用银浆贴在导电薄膜上，省略了芯片的焊接工艺，能够极大的提高塑封式IPM模块的生产效率。
上层导电薄膜2用于IGBT芯片4、二极管芯片5、驱动芯片6以及引线框架间的电气连接。导电薄膜与芯片间为面接触，较现有技术中的键合线实现的电气连接其稳定性、可靠性较好，通流能力较强。
导电薄膜包括内部电路以及外部薄膜，外部薄膜为绝缘材料。
下层导电薄膜3的底部还设置有导热绝缘层7与散热片8，提高模块的散热效率。
此外，导电薄膜的厚度可为小于0.5mm等，具体厚度尺寸根据使用需要而定，在此不做限制。
本发明公开了一种塑封式IPM模块电气连接结构，该结构通过采用导电薄膜作为芯片的载体，节省了引线框架作为载体部分的结构，优化引线框架的设计。同时将功率芯片与驱动芯片设置于导电薄膜上的同一高度，有效减小芯片间的距离，便于导电薄膜与芯片间的电气连接。通过采用银浆将芯片粘贴于导电薄膜上，省略了芯片的焊接和引线键合的工艺步骤，能够有效地提高模块的生产效率；且由于芯片与导电薄膜间为面接触，增大了接触面积，保证产品的通流能力、可靠性、稳定性和安全性，提高模块质量与使用寿命。
此外，由于导电薄膜为柔软材质，因此引线框架不必设计为折弯结构，这样可以降低整个模块的生产成本。且导电薄膜厚度较薄，散热性能较好。
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (3)

1.一种塑封式IPM模块电气连接结构，包括引线框架、IGBT芯片、二极管芯片与驱动芯片，其特征在于，该结构还包括导电薄膜，所述导电薄膜为上下设置的两层，所述IGBT芯片、二极管芯片与驱动芯片均设置于所述两层导电薄膜之间，上层导电薄膜的两端固定连接于所述引线框架上；
下层导电薄膜用于承载固定所述IGBT芯片、二极管芯片与驱动芯片，所述上层导电薄膜用于所述IGBT芯片、二极管芯片、驱动芯片以及引线框架间的电气连接；所述导电薄膜包括内部电路以及外部薄膜，所述外部薄膜为绝缘材料。
2.如权利要求1所述的塑封式IPM模块电气连接结构，其特征在于，所述导电薄膜与所述IGBT芯片、二极管芯片、驱动芯片以及引线框架间均通过银浆贴合固定。
3.如权利要求1所述的塑封式IPM模块电气连接结构，其特征在于，所述下层导电薄膜的底部还设置有导热绝缘层与散热片。
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