CN104867863A - 电子模块的制造 - Google Patents

电子模块的制造 Download PDF

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Publication number
CN104867863A
CN104867863A CN201510067672.9A CN201510067672A CN104867863A CN 104867863 A CN104867863 A CN 104867863A CN 201510067672 A CN201510067672 A CN 201510067672A CN 104867863 A CN104867863 A CN 104867863A
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China
Prior art keywords
lead frame
semiconductor chip
contacting
circuit board
interface
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Granted
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CN201510067672.9A
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English (en)
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CN104867863B (zh
Inventor
米夏埃尔·莱佩纳特
龙尼·维尔纳
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Siemens AG
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Siemens AG
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Publication of CN104867863A publication Critical patent/CN104867863A/zh
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Publication of CN104867863B publication Critical patent/CN104867863B/zh
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Abstract

本发明涉及一种用于制造电子模块(L)、特别是功率电子模块的方法(S1-S8)，所述方法包括至少一个半导体芯片(3，4)与至少一个引线框架(1)的触点接通，其中，半导体芯片(3，4)在其上侧(7)上并且在其下侧(6)上分别具有至少一个电接口(8，9)，并且至少一个引线框架(1)直接触点接通(S5)所述侧之一的所述接口(8，9)。一种电子模块(L)借助于所述方法(S1-S8)来制造。本发明特别是能够应用在功率电子模块上。

Description

电子模块的制造
技术领域
本发明涉及一种用于制造电子模块、特别是功率电子模块的方法，所述方法包括至少一个半导体芯片与至少一个引线框架的触点接通，其中，半导体芯片在其上侧上并且在其下侧上分别具有至少一个电接口。本发明也涉及一种电子模块，所述电子模块借助于所述方法制造。本发明特别是能够应用在功率电子模块上，所述功率电子模块具有至少一个功率半导体芯片形式的半导体芯片。
背景技术
在功率(电子)模块中通常通过功率半导体芯片的上侧或下侧建立至相应的所述功率半导体芯片的电连接。典型地在上侧上建立电连接，以便产生至模块的接口的电流动。已知用于建立这种电连接的是铝导线(粗导线或细导线)，所述铝导线一方面粘合到上侧上并且另一方面粘合到模块外部的和/或内部的连接面上。也公知的是，通过(粗导线或细导线的)铜导线粘合、细带粘合和与由合金构成的导线的粘合建立所述电连接。还有其他的连接解决方案，包括例如根据Semikron公司的所谓的“SkiN”技术的、烧结的、金属化的塑料薄膜。SkiN技术的特征在于由柔性的、结构化的薄膜替代粘合导线，所述薄膜平面地烧结在电路板上，所述电路板具有固定在其上的功率电子部件。此外，公知了由粗铜构成的焊接的汇流排。此外，公知了Siemens公司的所谓的“SiPLIT”技术。
在公知的连接技术中具有的缺点是，在使用不平坦的(例如借助于导线粘合的)连接技术中，与芯片表面连接的上部的布线层只能困难地进行冷却。平坦的连接技术的、例如“SkiN”技术或“SiPLIT”技术的应用与之相反在制造中是花费相对高的，并且此外尤其由于花费高的制造步骤、例如结构化或金属化是昂贵的。
发明内容
本发明的目的在于，至少部分地克服现有技术的缺点，并且特别是提出一种能简单地和廉价地转化的、并且能有效地冷却的用于具有至少一个电子部件、特别是功率电子部件、专门是功率半导体芯片的电子模块的连接技术。
该目的根据独立权利要求所述的特征实现。优选的实施方式特别是能够从从属权利要求中得出。
该目的通过一种用于制造电子模块的方法实现，所述方法包括至少一个半导体芯片与至少一个引线框架的触点接通，其中，半导体芯片在其一侧(下面所述侧不限制普遍性地称为“上侧”)上并且在与此相对设置的侧(下面所述侧不限制普遍性地称为“下侧”)上分别具有至少一个电接口，并且至少一个引线框架直接触点接通所述侧之一、特别是上侧的至少一个接口。
所述方法具有的优点是，相对于公知的平坦的连接技术能够简单地和廉价地制造，并且相对于非平坦的连接技术能够提供布线或电连接的非常稳定的、可靠的和能有效冷却的可能性。引线框架特别是可以替代通常非平坦的功率模块中的全部的粘合、以及例如SiPLIT中的复杂的制造过程。
至少一个半导体芯片可以是功率半导体芯片。电子模块则也可以称为功率电子模块。一个改进方案是，至少一个半导体芯片是功率开关。还有一个改进方案是，至少一个半导体芯片是IGBT、功率MOSFET、功率二极管、晶闸管、双向晶闸管等。
除了至少一个半导体芯片以外，模块的至少一个另外的部件还能够以类似的方式与引线框架连接，所述至少一个另外的部件例如是至少一个带壳的电子部件、能导电的间隔件、电阻、线圈、电容等。
引线框架可以例如由铜或铜合金构成。引线框架通常可以独立地制造并且是可操纵的电路结构。
半导体芯片在其上侧和下侧上分别具有至少一个电接口，这特别可以包括：所述半导体芯片仅仅在其上侧和下侧上分别具有至少一个电接口，也就是说，不具有侧面引出的连接管脚或小连接腿。
一个改进方案是，半导体芯片的电接口是平坦的接口或连接区域、例如接触区域或接触垫，从而所述电接口能够特别容易地触点接通。平面的接口或连接区域可以特别是理解为并非***相应的凹部中的凸出部，也就是说，不是连接销。因此，平坦的连接区域可以特别具有或者构成平坦的接触面，然而不局限于此。平坦的连接区域也可以集成在绝缘体下方。
“直接的”触点接触特别理解为这样一种触点接触，即在所述触点接触中，引线框架和半导体芯片的接口在没有其他的连接元件的情况下、即在不使用粘合导线或类似物的情况下彼此连接。然而在直接触点接通时可以使用增附剂，例如接触膏、焊料或烧结层。增附剂特别可以作为连接层存在。
一个构造方案是，所述方法至少包括下述步骤：(i)提供(至少一个)引线框架；(ii)将(至少一个)引线框架与至少一个半导体芯片的示例性地选取的上侧触点接通；并且(iii)将至少一个部件的以及必要时引线框架的下侧与共同的电路板触点接通。
步骤(ii)特别包括至少一个连接区域在半导体的上侧处的触点接通。对于这种情况而言，即在上侧上存在多个彼此电隔离的连接区域，引线框架可以与所述连接区域中的一个或多个触点接通，特别是也可以与所有连接区域触点接通。
步骤(iii)中的共同的电路板特别可以具有板状的基底，所述基底在其上或前侧上具有至少一个结构化的能导电层(Lage)，用于与至少一个半导体的至少一个下侧触点接触。结构化的层也可以称为导体结构或下部的布线层并且例如具有至少一个导体电路。此外，结构化的层可以与至少一个另外的部件连接和/或(例如通过间隔件)与引线框架连接。电路板的触点接通特别包括结构化的层的触点接通。
共同的电路板也可以称为“基底”，而电绝缘的载体则也可以称为“绝缘层”。共同的电路板可以是DCB电路板或IMS电路板。这种电路板例如由于其有效的可冷却性尤其适用于利用功率电子部件的运行。然而共同的电路板也可以是DAB(“Direct Aluminum Bonded(直接铝粘合)”)电路板、AMB(“Active Metal Brazing(活性金属钎焊)”)电路板或者也例如是通常的FR4电路板。
因此，在步骤(iii)中，引线框架可以与电路板连接，所述引线框架具有安装在其上的作为共同可操纵的单元的至少一个电子部件。为此，可以将电路板设置在装配有至少一个电子部件的引线框架上，和/或可以将装配的引线框架安置在电路板上。
所述构造方案的优点是，至少一个半导体芯片的上侧能够以非常高的精度触点接通半导体芯片。这在多个接触区域和/或相对小的接触区域位于上侧上时特别有利。下侧在特别是仅仅一个接触区域位于此处时能够以较高的定位公差被触点接通。所述构造方案例如能够使用在IGBT芯片上，所述芯片在其下侧上具有集电极接口，在其上侧上具有发射极接口并且附加地在其上侧上具有控制接口、特别是门极接口。
控制接口例如可以中间地或中心地、特别是以“中央门极”形式布置在上侧上。所述控制接口可替换地能够布置在边侧上(“边缘门极”)或在上侧的角上(“角门极”)。
然而原则上电子模块组合的其他顺序也是可能的，例如以至少一个电子部件装配电路板，并且接着将至少一个引线框架设置到装配的电路板上。
另一个设计是，步骤(ii)至少包括下述步骤：(iia)以相应的增附剂来铺盖引线框架的预设的接触区域；并且(iib)将至少一个电子部件的至少一个接口安装在相应的接触区域上。电子部件的上侧例如可以具有多个接口区域，所述接口区域分别由一个接触区域与至少一个引线框架触点接通。这个设计实现了特别简单的安装。
另一个设计是，在步骤(ii)或(iib)中使用倒装芯片(Flip-Chip)安装技术。这实现了以至少一个电子部件简单地、可靠地和准确地装配引线框架。
还有一个设计是，步骤(iii)包括通过增附剂、特别是通过与步骤(iia)中相同的增附剂的触点接通。这实现了较统一的进而较简单的制造。例如可以将增附剂涂覆在电路板上。
增附剂例如可以借助于模板印刷方法印制。
此外，一个设计是，增附剂是烧结材料或可烧结的材料。然而原则上也可以使用其他的材料，例如焊膏、能导电的粘合剂等。
还有一个用于简单制造的优选设计是，当增附剂是烧结材料时，则共同的烧结过程的步骤(iv)连接于步骤(iii)。也就是说，在一个过程中，不仅可以实现至少一个电子部件和引线框架之间的触点接触、至少一个电子部件和电路板之间的触点接触以及-如果存在的话-实现电路板和引线框架之间的触点接触(必要时通过中间元件例如导电的间隔件)。
对于能非常简单转换的烧结过程而言优选的是，所述烧结过程是烧结压制过程或者具有这种烧结压制过程。在此，烧结材料的烧结通过施加足够高的压力实现。因此可以取消高温，这避免了对至少一个电子部件的热损坏。在烧结压制过程中，将由电路板、一个(多个)电子部件和引线框架组成的复合的单元可以给出到合适的压模中。在此，为了拉平电路板上的力差别和微小的高度差别，可以将压力补偿材料一起给入到压模中。然而烧结过程不局限于此，并且可以例如也设计为无压的烧结或者另外的具有压力的烧结。
例如银膏可以用作烧结材料，用于增附的所述银膏例如作为银烧结层存在。所述银膏特别是适用于烧结压制过程期间的烧结。替代或除银膏以外，可以使用预成型的银垫(例如所谓的“Preforms(预制体)”)。
替代烧结，增附剂也可以被简单的烘干或硬化，和/或首先在增加的而温度下液化并且接着再次凝固。这种增附剂例如可以是焊料或热导粘合剂。
此外，一个设计是，在步骤(i)和(ii)之间进行以电绝缘材料在接触区域外部铺盖引线框架的至少一个部段的步骤。因此，可以避免引线框架与能导电的平面意外地触点接通。此外，可以因此延长或者甚至避免气隙。以铺盖电绝缘材料的步骤也可以是步骤(i)和/或步骤(ii)的分步骤。
电绝缘材料可以例如作为填料、颜料、能喷射的材料、薄膜或薄层被设置或者存在。
一个改进方案是，以电绝缘材料接着在接触区域上或邻接于接触区域铺盖引线框架。当应该借助于所述接触区域使例如在电子部件的上侧上中心接口区域触点接通时，上述情况例如是有用的。通过电绝缘材料则可以避免：与接触区域连接的部段可以接触邻近所述中心接口区域的另一个接口区域(例如发射极区域)。因此此外有一个设计，即，以电绝缘材料铺盖引线框架的至少一个部段，所述至少一个部段能够定位在电子部件的上部。
电绝缘材料可以在空气中固化。所述电绝缘材料可以在环境温度下或在增高的温度下、例如在炉中固化。在未增高的温度下的所述固化避免了例如炉子过程，增高的温度下的固化实现了非常快的固化。此外可以借助于紫外线等进行所述固化。引线框架可以利用完全固化的电绝缘材料、部分固化的电绝缘材料或实际上未固化的电绝缘材料与至少一个电子部件连接。
附加地或可替换地可以将电绝缘材料在期望的位置上施加到至少一个电子部件上和/或电路板上。
可以通过以增附剂涂覆或铺盖其接触区域、和/或通过设置电绝缘材料为步骤(ii)准备引线框架。
此外，一个设计是，将引线框架分隔开的步骤(v)连接于步骤(iii)或步骤(iv)。因此，可以将引线框架分成两个或更多的导体电路。所述分隔可以例如借助于激光切割进行。引线框架可以理解为导线电路组，所述导线电路组通过-特别是薄的-辅助接片彼此连接。在将引线框架分隔开时，切开至少一个辅助接片。
该目的也通过一种电子模块实现，所述电子模块借助于如前所述的方法制造。这种电子模块可以类似于所述方法构造并且具有相同的优点。
附图说明
本发明的前述特性、特征和优点以及实现其的方式和方法可以结合实施例的下述简图清楚地和明确地理解，结合附图详细地叙述所述实施例。在此出于简明的目的，相同的或相同作用的元件设有相同的附图标记。
图1根据流程图示出根据本发明的方法的一个实施例；
图2以俯视图示出借助于根据本发明的方法制造的电子模块；
图3在通过图2中所示的第一截面的侧视图中示出图2中的电子模块作为截面图；和
图4在通过图2中所示的第一截面的侧视图中示出图2中的电子模块作为截面图。
具体实施方式
图1中示出用于进行用于制造图2至4中所示的功率电子模块L的方法的可能的流程图。
在第一步骤S1中，提供引线框架1，所述引线框架应该构成功率电子模块L的上布线层(见图2)。在此，引线框架1是一个由多个导线电路2或2a至2d构成的组合的、层状结构，所述导线电路首先由薄辅助接片(未示出)彼此连接。引线框架1由铜或其合金构成，并且可以自支持地***纵。引线框架1可以例如由铜片制造出来。
在第二步骤S2中，提供多个电子部件3，4、即在此作为IGBT芯片3形式的功率半导体芯片和其他的电子部件4例如功率二极管。其他的电子部件可以是带壳的和/或作为芯片或裸芯片存在。
电子部件3，4在其下侧上或者在其下侧上方分别具有接口区域。特别是IGBT芯片3在其下侧6上具有用于集电极(“集电极接口”)的接口区域(未示出)，并且在所述芯片的上侧7上具有两个连接区域8和9、即用于相应的IGBT芯片的门极(“中央门极”8)的中央的第一接口区域以及与其电分离的、用于相应的IGBT 3的发射极(“发射极接口”)的围绕中央门极8的第二接口区域9。然而除了中央门极8，还可以例如存在边缘门极和角门极。用于描述图3的出自图2的截面III-III延伸通过中央门极8。用于描述图4的出自图2的截面IV-IV垂直于截平面III-III并且与中央门极8错开地延伸。
也可以提供其他的部件、例如线圈、电阻、能导电的间隔件等。下面也示例性地还示出导电的间隔件10、例如方形的铜块的触点接通。
在第三步骤S3a中，将以例如银烧结膏(未示出)形式的增附剂铺盖引线框架1的接触区域。可替换地或附加地，在第三步骤S3b中以增附剂铺盖电子部件3，4和间隔件10的上侧接触区域8，9。
在第四步骤S4中，以电绝缘材料(未示出)、例如填料在接触区域外部铺盖引线框架1的部段。所述部段特别是可以是这样的部段，其在功率电子模块L的制造状态中在至少一个电子部件3，4的上侧7上延伸。
在第五步骤S5中，例如通过互相压紧，使引线框架1的接触区域与电子部件3，4的上侧的接口区域7，8并且与间隔件10连接或触点接通。可以特别是借助于使用倒装芯片安装技术进行步骤S5。在进行步骤S5之后，电子部件3，4和间隔件10与引线框架1组合。
在此，引线框架1与每个IGBT芯片3两次连接，也就是说，通过接触区域与中央门极8连接并且通过至少一个另外的接触区域与发射极接口区域9连接。引线框架1的连接在具有中央门极8的接触区域的部段至少在其朝向IGBT 3的下侧在发射极接口区域9的上部以电绝缘材料被铺盖，以便因此阻止电连接。
此外，电子部件3，4首先与引线框架1的触点接通得出的优点是，相对小面积的中央门极8能够以高精度与引线框架1的所属的接触区域触点接通，确切地说，与当电子部件3，4首先与电路板并且接着与引线框架1连接时相比更高的精度来触点接通。
在下述步骤S6中，电子部件3，4的下侧6以及间隔件10与共同的电路板11触点接通。共同的电路板11是DCB电路板，所述电路版具有板状的陶瓷基层12、前侧的结构化的由铜构成的层13、以及背侧的由铜构成的层14。前侧的层13构成用于电子部件3，4和间隔件10的下侧的布线层、特别是导线电路结构。在此，前侧的层13分成五个彼此电隔离的区域13a至13e。与电路板11的触点接通和连接特别是指与所述前侧的层13或13a至13e的触点接通或连接。在此，间隔件10用于在引线框架1和前侧的层13之间的高度补偿，从而引线框架1不需要弯曲地与前侧的层13连接。
为了以非常小的阻力实现机械稳定的触点接通，在下述步骤S7中，功率电子模块L的之前连接的元件1至14经受烧结压制过程。为此，所述元件1至14给出到适当的模型(例如凸模)中，其中选择地事先放置有压力补偿薄膜(未示出)。在所述模型中给所述元件1至14施加压力，因此，至少部分地烧结银烧结膏或银烧结层(未示出)。烧结的银层是显著机械稳定的，并且得到与未烧结的银膏相比改善的粘附性。电阻和热阻是极小的。
在下述步骤S8中，借助于切开辅助接片将引线框架1分隔成各个导体电路2a-2d。
尽管本发明具体地通过所示的实施例详细示出和说明，而本发明不局限于此并且在不脱离本发明的保护范围的情况下可以由本领域技术人员由此推导出其他的变型。
因此，图1中所示的过程步骤不需要以所述顺序进行。例如步骤S2可以在步骤S3a/S3b和/或S4之后进行。步骤S4也在步骤S3a/S3b之前进行。
一般来说，只要没有明确地、例如通过术语“恰好一个”限定，则“一”、“一个”等理解为单数或复数、特别是理解为“至少一个”或“一个或多个”的意义。
只要没有明确地限定，数字说明也可以准确地包括给出的数字并且包括通常的公差范围。

Claims (12)

1.一种用于制造电子模块(L)、特别是功率电子模块的方法(S1-S8)，所述方法包括至少一个半导体芯片(3，4)与至少一个引线框架(1)的触点接通，其中，
所述半导体芯片(3，4)在所述半导体芯片的上侧(7)上并且在所述半导体芯片的下侧(6)上分别具有至少一个电的接口(8，9)，并且
至少一个所述引线框架(1)直接触点接通(S5)所述侧之一的所述接口(8，9)。
2.根据权利要求1所述的方法(S1-S8)，其中，所述方法(S1-S8)至少包括下述步骤：
(i)提供(S1)所述引线框架(1)；
(ii)将所述引线框架(1)与至少一个半导体芯片(3，4)的所述上侧(7)触点接通(S5)；并且
(iii)将至少一个所述半导体芯片(3，4)的以及所述引线框架(1)的所述下侧(6)与共同的电路板(11)触点接通(S6)。
3.根据权利要求2所述的方法(S1-S8)，其中，步骤(ii)至少包括下述步骤：
(iia)以相应的增附剂铺盖(S3a)所述引线框架(1)的预设的接触区域；并且
(iib)将至少一个所述半导体芯片(3，4)的至少一个所述接口(8，9)安装在相应的接触区域处。
4.根据权利要求3所述的方法(S1-S8)，其中，在步骤(iib)中使用倒装芯片安装技术。
5.根据权利要求2或3中任一项所述的方法(S1-S8)，其中，步骤(iii)包括通过增附剂的触点接通(S6)。
6.根据权利要求3或4与权利要求5的组合所述的方法(S1-S8)，其中，所述增附剂是烧结材料，并且共同的烧结压制过程(S7)的步骤(iv)连接于步骤(iii)。
7.根据权利要求2至6中任一项所述的方法(S1-S8)，其中，在步骤(i)和(ii)之间进行以电绝缘材料在所述接触区域外部铺盖所述引线框架(1)的至少一个部段的步骤(S4)。
8.根据权利要求7所述的方法(S1-S8)，其中，以所述电绝缘材料铺盖所述引线框架(1)的至少一个部段，所述至少一个部段能够定位在半导体(3)的上部。
9.根据权利要求2至8中任一项所述的方法(S1-S8)，其中，将所述引线框架(1，2，2a-2d)分隔开的步骤(v)连接于步骤(iii)或步骤(iv)。
10.根据前述权利要求中任一项所述的方法(S1-S8)，其中，至少一个电子部件包括至少一个半导体芯片(3，4)、特别是至少一个功率开关(3)。
11.根据权利要求2至10中任一项所述的方法(S1-S8)，其中，所述电路板(11)是DCB电路板或IMS电路板。
12.一种电子模块(L)，所述电子模块借助于根据前述权利要求中任一项所述的方法(S1-S8)制造。
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