CN104851539A - Electronic component conducting electrode and preparation method thereof - Google Patents
Electronic component conducting electrode and preparation method thereof Download PDFInfo
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- CN104851539A CN104851539A CN201510277748.0A CN201510277748A CN104851539A CN 104851539 A CN104851539 A CN 104851539A CN 201510277748 A CN201510277748 A CN 201510277748A CN 104851539 A CN104851539 A CN 104851539A
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Abstract
The invention relates to an electronic component conducting electrode. The conducting electrode comprises a dual-layer structure, namely a conducting layer and a welding layer, wherein the conducting layer is in ohm contact with electronic ceramics to form a conducting path, and nano metal particles are burned in a high temperature to form a compact conducting film; a metal material which is good in weldability is deposited on the surface of the conducting film to form the welding layer; pure copper or copper alloy materials are sprayed in a thermal electric arc manner or a flame spraying manner to form the welding layer. The invention also discloses a preparation method of the conducting electrode. The electronic ceramics adopt the electrode, so that not only is the electrode cost reduced, but also the large current impact resisting characteristic can be remarkably improved.
Description
Technical field
The present invention relates to a kind of electronic devices and components conductive electrode, the invention still further relates to the preparation method of this conductive electrode.
Background technology
Piezo-resistance is a kind of votage limit type protection device, has big current process and energy absorption capability, low Leakage Current, multiple surge waveform ability to bear; The nonlinear characteristic of its uniqueness by overvoltage clamper to a relatively-stationary magnitude of voltage, thus can realize the protection to late-class circuit, and its response time is short, is generally nanosecond.Piezo-resistance is usually by mixing a small amount of electron level Bi in major ingredient ZnO powder
2o
3, Co
2o
3, MnO
2, Sb
2o
3etc. multiple additives, after batch mixing, the series of process such as mist projection granulating, dry-pressing formed, binder removal sinters, the attached conductive silver slurry of printing burning makes electronic ceramic.
In order to reduce the manufacturing cost of piezo-resistance, in prior art, application number is 201310177249.5, the Chinese patent document that denomination of invention is " base metal combination electrode of a kind of electronic ceramic assembly and preparation method thereof " discloses the technique of Multi-layer thermal spraying base metal, made by this technique, the electrode shortcoming of piezo-resistance is, sprayed on material and pottery just surface physics adsorb, metal material and ceramic matrix interface impedance high, high discharging current easily produces high heat at interface, the rear failure mode of impact is electrode and is separated with ceramic body, risk is brought to the prolonged application reliability of product.
Summary of the invention
Technical problem to be solved by this invention is for the deficiencies in the prior art, a kind of conductive electrode of novel electronic devices and components is proposed, substitute traditional fine silver slurry typography, electronic devices and components electrode cost can be reduced, promote the piezo-resistance waveform of resistance to 8/20us lightning current impact capacity simultaneously.
Another kind of technical problem to be solved by this invention there is provided a kind of preparation method of aforesaid conductive electrode.
Technical problem to be solved by this invention is realized by following technical scheme.The present invention is a kind of conductive electrode of electronic devices and components, be characterized in: this electrode comprises double-decker, i.e. conductive layer and weld layer, conductive layer and electronic ceramic form ohmic contact, form conductive path, conductive layer selects nano-metal particle to burn till dense conductive film through high temperature; Conductive layer surface need deposit the good metal material of weldability and form weld layer; Weld layer selects the alloy material of pure red copper or copper to adopt thermic arc or flame-spraying to form.
The conductive electrode of electronic devices and components of the present invention, preferred technical scheme is further: described conducting layer electrode adopts silk-screen printing technique printing to form.
The conductive electrode of electronic devices and components of the present invention, preferred technical scheme is further: the material of described conductive layer is selected from the slurry of silver slurry, NixB slurry, aluminium nickel slurry, aluminium zinc slurry or aluminium nickel zinc three kinds of basic material.
The conductive electrode of electronic devices and components of the present invention, preferred technical scheme is further: described silver slurry is made up of the raw material of following percentage by weight:
Silver nano-powder 30%-40%; Preferred 34%-36%; Further preferably 35%;
Glass dust 1%-4%; Preferred 2%-4%; Further preferably 3%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 59%-69%; Preferred 60%-65%; Further preferably 62%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
The conductive electrode of electronic devices and components of the present invention, preferred technical scheme is further: described NixB slurry is made up of the raw material of following percentage by weight:
NiB alloyed powder 60%-75%; Preferred 65%-72%; Further preferably 70%;
Glass dust 5%-10%; Preferred 6%-8%; Further preferably 7%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 15%-30%; Preferred 20%-25%; Further preferably 23%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
The conductive electrode of electronic devices and components of the present invention, preferred technical scheme is further: described aluminium nickel slurry is made up of the raw material of following percentage by weight:
Aluminium powder 61%-75%; Preferred 65%-70%; Further preferably 67%;
Nickel powder 0.5%-1%; Preferred 0.6%-0.8%; Further preferably 0.7%;
Glass dust 5%-8%; Preferred 6%-7%; Further preferably 6.3%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 16%-30%; Preferred 22%-28%; Further preferably 26%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
The conductive electrode of electronic devices and components of the present invention, preferred technical scheme is further: described aluminium zinc slurry is made up of the raw material of following percentage by weight:
Aluminium powder 61%-75%; Preferred 65%-70%; Further preferably 67%;
Zinc powder 0.5%-1%; Preferred 0.6%-0.8%; Further preferably 0.7%;
Glass dust 5%-8%; Preferred 6%-7%; Further preferably 6.3%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 16%-30%; Preferred 22%-28%; Further preferably 26%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
The conductive electrode of electronic devices and components of the present invention, preferred technical scheme is further: described aluminium nickel zinc slurry is made up of the raw material of following percentage by weight:
Aluminium powder 60%-75%; Preferred 65%-70%; Further preferably 66%;
Zinc powder 0.5%-1%; Preferred 0.6%-0.8%; Further preferably 0.7%;
Nickel powder 0.5%-1%; Preferred 0.6%-0.8%; Further preferably 0.7%;
Glass dust 5%-8%; Preferred 6%-7%; Further preferably 6.6%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 15%-30%; Preferred 22%-28%; Further preferably 26%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Technical problem to be solved by this invention can also be realized further by following technical scheme.The invention also discloses a kind of preparation method of the electronic devices and components conductive electrode as described in any one technical scheme above, be characterized in, comprise following making step:
(1) ceramic surface is after pure water cleaning, after centrifuge dripping;
(2) metal powder adds the metal paste that glass dust and organic carrier are made into certain tenor, by screen printing mode, and controls the positive and negative that above-mentioned slurry is printed in ceramic substrate by discharge quantity;
(3) ceramics of type metal cream is put into 150-200 DEG C of continuous tunnel furnace 10-20min to dry;
(4) chip of having dried being put into temperature is that the continuous tunnel furnace of 550 DEG C ~ 650 DEG C carries out burning metallic reducing, and conductive layer is prepared complete;
(5) chip having prepared conductive layer is inserted cover in frock; Spraying wire adopts copper wire, the spray parameters of setting electric-arc thermal spray coating, and spray voltage is 20 ~ 35V, and spraying current is 100 ~ 200A, and spraying air pressure is 0.5 ~ 0.6Mpa; Wire feed voltage 10 ~ 14V, coating thickness is 20 ~ 30 μm.
Compared with prior art, the invention has the beneficial effects as follows: the material usage reducing noble metal, adopt basic material combination process to form the resistance to lightning current impact capacity of conductive electrode lifting electronic devices and components.
Embodiment
Below in conjunction with embodiment, the present invention is further detailed explanation, to make those skilled in the art further understand the present invention, and do not form the restriction to right of the present invention.
Embodiment 1, a kind of conductive electrode of electronic devices and components, this electrode comprises double-decker, i.e. conductive layer and weld layer, and conductive layer and electronic ceramic form ohmic contact, and form conductive path, conductive layer selects nano-metal particle to burn till dense conductive film through high temperature; Conductive layer surface need deposit the good metal material of weldability and form weld layer; Weld layer selects the alloy material of pure red copper or copper to adopt thermic arc or flame-spraying to form.
Embodiment 2, in the conductive electrode of the electronic devices and components described in embodiment 1: described conducting layer electrode adopts silk-screen printing technique printing to form.
Embodiment 3, in the conductive electrode of the electronic devices and components described in embodiment 1 or 2: the material of described conductive layer is selected from the slurry of silver slurry, NixB slurry, aluminium nickel slurry, aluminium zinc slurry or aluminium nickel zinc three kinds of basic material.
Embodiment 4, in the conductive electrode of the electronic devices and components described in embodiment 3: described silver slurry is made up of the raw material of following percentage by weight:
Described silver slurry is made up of the raw material of following percentage by weight:
Silver nano-powder 40%;
Glass dust 1%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 59; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 5, in the conductive electrode of the electronic devices and components described in embodiment 3: described silver slurry is made up of the raw material of following percentage by weight:
Described silver slurry is made up of the raw material of following percentage by weight:
Silver nano-powder 30%;
Glass dust 4%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 66%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 6, in the conductive electrode of the electronic devices and components described in embodiment 3: described silver slurry is made up of the raw material of following percentage by weight:
Silver nano-powder 35%;
Glass dust 3%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 62%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 7, in the conductive electrode of the electronic devices and components described in embodiment 3: described NixB slurry is made up of the raw material of following percentage by weight:
NiB alloyed powder 60%
Glass dust 10%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 30%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 8, in the conductive electrode of the electronic devices and components described in embodiment 3: described NixB slurry is made up of the raw material of following percentage by weight:
NiB alloyed powder 75%;
Glass dust 5%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 20%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 9, in the conductive electrode of the electronic devices and components described in embodiment 3: described NixB slurry is made up of the raw material of following percentage by weight:
NiB alloyed powder 70%;
Glass dust 7%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 23%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 10, in the conductive electrode of the electronic devices and components described in embodiment 3: described aluminium nickel slurry is made up of the raw material of following percentage by weight:
Aluminium powder 61%;
Nickel powder 1%;
Glass dust 8%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 30%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 11, in the conductive electrode of the electronic devices and components described in embodiment 3: described aluminium nickel slurry is made up of the raw material of following percentage by weight:
Aluminium powder 75%;
Nickel powder 0.5%
Glass dust 5%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 19.5%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 12, in the conductive electrode of the electronic devices and components described in embodiment 3: described aluminium nickel slurry is made up of the raw material of following percentage by weight:
Aluminium powder 67%;
Nickel powder 0.7%;
Glass dust 6.3%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 26%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 13, in the conductive electrode of the electronic devices and components described in embodiment 3: described aluminium zinc slurry is made up of the raw material of following percentage by weight:
Aluminium powder 61%
Zinc powder 1%;
Glass dust 8%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 30%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 14, in the conductive electrode of the electronic devices and components described in embodiment 3: described aluminium zinc slurry is made up of the raw material of following percentage by weight:
Aluminium powder 75%;
Zinc powder 0.5%;
Glass dust 5%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 19.5%; Preferred 22%-28%; Further preferably 26%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 15, in the conductive electrode of the electronic devices and components described in embodiment 3: described aluminium zinc slurry is made up of the raw material of following percentage by weight:
Aluminium powder 67%;
Zinc powder 0.7%;
Glass dust 6.3%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 26%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 16, in the conductive electrode of the electronic devices and components described in embodiment 3: described aluminium nickel zinc slurry is made up of the raw material of following percentage by weight:
Aluminium powder 60%;
Zinc powder 1%;
Nickel powder 1%;
Glass dust 8%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 30%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 17, in the conductive electrode of the electronic devices and components described in embodiment 3: described aluminium nickel zinc slurry is made up of the raw material of following percentage by weight:
Aluminium powder 75%;
Zinc powder 0.5%;
Nickel powder 0.5%;
Glass dust 5%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 19%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 18, in the conductive electrode of the electronic devices and components described in embodiment 3: described aluminium nickel zinc slurry is made up of the raw material of following percentage by weight:
Aluminium powder 66%;
Zinc powder 0.7%;
Nickel powder 0.7%;
Glass dust 6.6%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 26%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
Embodiment 19, a kind of preparation method of the electronic devices and components conductive electrode as described in embodiment 4-18, comprises following making step:
(1) ceramic surface is after pure water cleaning, after centrifuge dripping;
(2) metal powder adds the metal paste that glass dust and organic carrier are made into certain tenor, by screen printing mode, and controls the positive and negative that above-mentioned slurry is printed in ceramic substrate by discharge quantity;
(3) ceramics of type metal cream is put into 150 DEG C of continuous tunnel furnace 10min to dry;
(4) chip of having dried being put into temperature is that the continuous tunnel furnace of 550 DEG C carries out burning metallic reducing, and conductive layer is prepared complete;
(5) chip having prepared conductive layer is inserted cover in frock; Spraying wire adopts copper wire, the spray parameters of setting electric-arc thermal spray coating, and spray voltage is 20V, and spraying current is 100A, and spraying air pressure is 0.5Mpa; Wire feed voltage 10V, coating thickness is 20 μm.
Embodiment 20, a kind of preparation method of the electronic devices and components conductive electrode as described in embodiment 4-18, is characterized in, comprises following making step:
(1) ceramic surface is after pure water cleaning, after centrifuge dripping;
(2) metal powder adds the metal paste that glass dust and organic carrier are made into certain tenor, by screen printing mode, and controls the positive and negative that above-mentioned slurry is printed in ceramic substrate by discharge quantity;
(3) ceramics of type metal cream is put into 200 DEG C of continuous tunnel furnace 20min to dry;
(4) chip of having dried being put into temperature is that the continuous tunnel furnace of 650 DEG C carries out burning metallic reducing, and conductive layer is prepared complete;
(5) chip having prepared conductive layer is inserted cover in frock; Spraying wire adopts copper wire, the spray parameters of setting electric-arc thermal spray coating, and spray voltage is 35V, and spraying current is 200A, and spraying air pressure is 0.6Mpa; Wire feed voltage 14V, coating thickness is 30 μm.
Embodiment 21, adopts the piezo-resistance of 14D681 model to test, process and result as follows:
Experiment 1:
1. electrode conducting layer making step:
(1) ceramic surface is after pure water cleaning, after centrifuge dripping;
(2) organic carrier that fine silver powder adds weight ratio 3% glass dust and weight ratio 55% is made into the silver paste that silver content is 40%.By screen printing mode, and control the positive and negative that above-mentioned silver paste is printed in ceramic substrate 1 by discharge quantity;
(3) ceramics printing silver paste is put into 200 degree of continuous tunnel furnace 10min to dry.
(4) chip of having dried being put into temperature is that the continuous tunnel furnace of 600 DEG C carries out silver ink firing reduction, prepared by conductive layer.
2. weld layer making step:
Being inserted by the chip prepared covers in frock;
Spraying wire adopts copper wire, the spray parameters of setting electric-arc thermal spray coating, and spray voltage is 20 ~ 35V, and spraying current is 100 ~ 200A, and spraying air pressure is 0.5 ~ 0.6Mpa; Wire feed voltage 10 ~ 14V, coating thickness is 20 ~ 30 μm.
By completing, conductive layer adopts scolding tin to weld with the chip of weld layer with tinned wird, and welding product are encapsulated through epoxy resin, detecting electric characteristic.
Experiment 2-5 is slurry screen print materials being replaced by respectively NixB slurry, aluminium nickel slurry, aluminium zinc slurry or aluminium nickel zinc three kinds of basic material on experiment 1 basis, and processing step is no longer endured at this and stated.
The lightning current of the resistance to 8/20us impact capacity of relatively each experiment, standard be before and after lightning current impacts before voltage change ratio ︳ V1mA after-V1mA before ︳/V1mA <10% and outward appearance without disintegrating tablet, with reference to following table:
Can reach a conclusion from Experimental comparison's table, combination electrode after adopting printing aluminium nickel zinc slurry to spray with copper wire starches than traditional printing fine silver that to make electrode lightning current impact capacity stronger, can reach 7KA still outward appearance OK, the front and back of lightning current impact simultaneously voltage change ratio is all less than other screen printing sizing agents and copper wire sprays the rear electrode formed.
Claims (10)
1. the conductive electrode of electronic devices and components, it is characterized in that: this electrode comprises double-decker, i.e. conductive layer and weld layer, conductive layer and electronic ceramic form ohmic contact, form conductive path, conductive layer selects nano-metal particle to burn till dense conductive film through high temperature; Conductive layer surface need deposit the good metal material of weldability and form weld layer; Weld layer selects the alloy material of pure red copper or copper to adopt thermic arc or flame-spraying to form.
2. the conductive electrode of electronic devices and components according to claim 1, is characterized in that: described conducting layer electrode adopts silk-screen printing technique printing to form.
3. the conductive electrode of electronic devices and components according to claim 1 and 2, is characterized in that: the material of described conductive layer is selected from the slurry of silver slurry, NixB slurry, aluminium nickel slurry, aluminium zinc slurry or aluminium nickel zinc three kinds of basic material.
4. the conductive electrode of electronic devices and components according to claim 3, is characterized in that: described silver slurry is made up of the raw material of following percentage by weight:
Silver nano-powder 30%-40%;
Glass dust 1%-4%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 59%-69%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
5. the conductive electrode of electronic devices and components according to claim 3, is characterized in that: described NixB slurry is made up of the raw material of following percentage by weight:
NiB alloyed powder 60%-75%;
Glass dust 5%-10%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 15%-30%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
6. the conductive electrode of electronic devices and components according to claim 3, is characterized in that: described aluminium nickel slurry is made up of the raw material of following percentage by weight:
Aluminium powder 61%-75%;
Nickel powder 0.5%-1%;
Glass dust 5%-8%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 16%-30%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
7. the conductive electrode of electronic devices and components according to claim 3, is characterized in that: described aluminium zinc slurry is made up of the raw material of following percentage by weight:
Aluminium powder 61%-75%;
Zinc powder 0.5%-1%;
Glass dust 5%-8%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 16%-30%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
8. the conductive electrode of electronic devices and components according to claim 3, is characterized in that: described aluminium nickel zinc slurry is made up of the raw material of following percentage by weight:
Aluminium powder 60%-75%;
Zinc powder 0.5%-1%;
Nickel powder 0.5%-1%;
Glass dust 5%-8%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 15%-30%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
9. the conductive electrode of electronic devices and components according to claim 3, is characterized in that: described aluminium nickel zinc slurry is made up of the raw material of following percentage by weight:
Aluminium powder 66%;
Zinc powder 0.7%;
Nickel powder 0.7%;
Glass dust 6.6%; The Main Ingredients and Appearance of glass dust is BiO
2, ZnO and B
2o
3;
Organic carrier 26%; The Main Ingredients and Appearance of organic carrier is ethyl cellulose and terpinol.
10. as a preparation method for the electronic devices and components conductive electrode in claim 4-9 as described in any one, it is characterized in that, comprise following making step:
(1) ceramic surface is after pure water cleaning, after centrifuge dripping;
(2) metal powder adds the metal paste that glass dust and organic carrier are made into certain tenor, by screen printing mode, and controls the positive and negative that above-mentioned slurry is printed in ceramic substrate by discharge quantity;
(3) ceramics of type metal cream is put into 150-200 DEG C of continuous tunnel furnace 10-20min to dry;
(4) chip of having dried being put into temperature is that the continuous tunnel furnace of 550 DEG C ~ 650 DEG C carries out burning metallic reducing, and conductive layer is prepared complete;
(5) chip having prepared conductive layer is inserted cover in frock; Spraying wire adopts copper wire, the spray parameters of setting electric-arc thermal spray coating, and spray voltage is 20 ~ 35V, and spraying current is 100 ~ 200A, and spraying air pressure is 0.5 ~ 0.6Mpa; Wire feed voltage 10 ~ 14V, coating thickness is 20 ~ 30 μm.
Priority Applications (1)
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|---|---|---|---|
| CN201510277748.0A CN104851539A (en) | 2015-05-27 | 2015-05-27 | Electronic component conducting electrode and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510277748.0A CN104851539A (en) | 2015-05-27 | 2015-05-27 | Electronic component conducting electrode and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106531379A (en) * | 2015-09-11 | 2017-03-22 | 成都铁达电子有限责任公司 | Electrode material and low-cost electrode manufacturing method |
| CN110097996A (en) * | 2019-04-30 | 2019-08-06 | 东莞珂洛赫慕电子材料科技有限公司 | A kind of lead-free ceramics base heating resistor slurry and preparation method thereof |
| CN110246605A (en) * | 2019-05-06 | 2019-09-17 | 深圳航天科技创新研究院 | A kind of anti-oxidative conductive paste composition and conductive coating and preparation method thereof |
| CN111370190A (en) * | 2016-07-13 | 2020-07-03 | 成都铁达电子股份有限公司 | Electrode of piezoresistor |
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| CN101699565A (en) * | 2009-10-22 | 2010-04-28 | 广东风华高新科技股份有限公司 | Low-temperature sintering silver electrode slurry |
| CN103247362A (en) * | 2013-04-17 | 2013-08-14 | 隆科电子(惠阳)有限公司 | Base metal combined electrode of electronic ceramic part and preparation method of base metal combined electrode |
| CN104299738A (en) * | 2014-09-18 | 2015-01-21 | 兴勤（常州）电子有限公司 | Novel electrode electronic component and preparation method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101699565A (en) * | 2009-10-22 | 2010-04-28 | 广东风华高新科技股份有限公司 | Low-temperature sintering silver electrode slurry |
| CN103247362A (en) * | 2013-04-17 | 2013-08-14 | 隆科电子(惠阳)有限公司 | Base metal combined electrode of electronic ceramic part and preparation method of base metal combined electrode |
| CN104299738A (en) * | 2014-09-18 | 2015-01-21 | 兴勤（常州）电子有限公司 | Novel electrode electronic component and preparation method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106531379A (en) * | 2015-09-11 | 2017-03-22 | 成都铁达电子有限责任公司 | Electrode material and low-cost electrode manufacturing method |
| CN111370190A (en) * | 2016-07-13 | 2020-07-03 | 成都铁达电子股份有限公司 | Electrode of piezoresistor |
| CN110097996A (en) * | 2019-04-30 | 2019-08-06 | 东莞珂洛赫慕电子材料科技有限公司 | A kind of lead-free ceramics base heating resistor slurry and preparation method thereof |
| CN110097996B (en) * | 2019-04-30 | 2020-11-17 | 东莞珂洛赫慕电子材料科技有限公司 | Lead-free ceramic-based heating resistor slurry and preparation method thereof |
| CN110246605A (en) * | 2019-05-06 | 2019-09-17 | 深圳航天科技创新研究院 | A kind of anti-oxidative conductive paste composition and conductive coating and preparation method thereof |
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Application publication date: 20150819 |