CN104835762A - 一种窗花形表面结构的可控温加热盘 - Google Patents

一种窗花形表面结构的可控温加热盘 Download PDF

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CN104835762A
CN104835762A CN201510206517.0A CN201510206517A CN104835762A CN 104835762 A CN104835762 A CN 104835762A CN 201510206517 A CN201510206517 A CN 201510206517A CN 104835762 A CN104835762 A CN 104835762A
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heat
heating disc
temperature
wafers
heating plate
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陈英男
姜崴
郑旭东
关帅
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Piotech Inc
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Piotech Shenyang Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一种窗花形表面结构的可控温加热盘，主要解决现有的加热盘及静电卡盘所存在的无法快速、准确控制晶圆温度的问题。本发明通过进气通道在加热盘表面与晶圆间形成一定的气隙，并在其中通入热传导效果较好的导热气体作为传热介质，经加热盘的温度快速的传到晶圆，或是将晶圆的温度迅速的传到至加热盘上导出。通过合理的盘面结构设计，使得导热介质能够快速均匀的在空隙中流动，及时实现加热盘及晶圆的热交换。依据介质流动所带来的压力及流速变化规律确定各个区域大小或沟槽尺寸，来调节导热介质所带走的热量，以实现对晶圆温度的快速准确控制。进一步提高晶圆的成品率及半导体沉积设备的生产效率。

Description

一种窗花形表面结构的可控温加热盘
技术领域
本发明涉及一种应用于半导体沉积设备的可控温加热盘的盘面结构。使用窗花形盘面气体分布形式，以实现对晶圆温度的精确控制。属于半导体薄膜沉积应用及制造技术领域。
背景技术
半导体设备在沉积反应时往往需要使晶圆及腔室空间预热或维持在沉积反应所需要的温度，大多数半导体沉积设备都会使用加热盘或静电卡盘来实现对晶圆预热的目的。但因为沉积反应多是在真空条件下进行，真空环境因缺乏导热介质，热传导性能较差。往往无法快速将晶圆预热到所需温度，或是在沉积反应前无法均匀的将晶圆预热。在有射频参与的半导体镀膜设备中，当射频所激发的能量到达晶圆表面时，因为热传导介质的缺乏，往往又会使晶圆表面的温度快速升高，使得晶圆表面温度超出沉积所需温度，而使晶圆发生损坏。随着晶圆尺寸的逐渐增大，晶圆本身的温度均匀性直接决定着晶圆品质的好或坏，快速、准确的控温对生产效率的提高及产品良率的提高都是至关重要的。
现有的半导体沉积设备加热盘及静电卡盘大都只具有加热盘自身的温度调节及控温功能，对于晶圆的温度是无法达到精确控制的。然而沉积反应所最急需的确是对晶圆温度的快速、准确控制。只有将晶圆的温度快速、准确的维持在沉积反应所需的温度范围内，才能实现对产品良率及效率的提升。
发明内容
本发明以解决上述问题为目的，主要解决现有的加热盘及静电卡盘所存在的无法快速、准确控制晶圆温度的问题。本发明通过进气通道在加热盘表面与晶圆间形成一定的气隙，并在其中通入热传导效果较好的导热气体作为传热介质，经加热盘的温度快速的传到到晶圆，或是将晶圆的温度迅速的传至加热盘上导出。通过合理的盘面结构设计，使得导热介质能够快速均匀的在空隙中流动，及时实现加热盘及晶圆的热交换。
为实现上述目的，本发明采用下述技术方案：一种窗花形表面结构的可控温加热盘，采用在加热盘表面设计一种窗花形的沟槽形式，中间作为气体导入的入口，由一个圆形空间用来释放气体进入时的压力及将其通过多条径向沟槽，将中间进入的导热介质输送到加热盘的边缘区域，并有圆周方向分布的沟槽与径向沟槽联通，使得导热介质之间的流动与导通更顺畅，解决由于各介质所流经空间不同而造成的温度不均匀现象，以精确控制晶圆温度。气体最终会在加热盘边缘的气体回收孔，从加热盘内部返回至导热介质冷却装置，并在其中实现冷却，以便将多余的热量带走。冷却后的气体会再次从加热盘中心流入，以实现导热介质的循环流动。也可将加热盘外圆的沟槽设计成开放式，使导热介质直接扩散至腔室空间而不收集介质重新进行循环。
本发明的有益效果及特点：
通过窗花形表面结构的沟槽，在加热盘及晶圆之间形成一定的气隙空间，并在该气隙空间中通入热传导系数较高的导热介质，用以加强真空环境下的热传导效率。通过合理化设计的表面气体分布结构，使得导热介质能够直接、快速、均匀的分布在加热盘与晶圆之间，并依据介质流动所带来的压力及流速变化规律确定各个区域大小或沟槽尺寸，来调节导热介质所带走的热量，以实现对晶圆温度的快速准确控制。进一步提高晶圆的成品率及半导体沉积设备的生产效率。
附图说明
图1是本发明的结构示意图。
图中零件标号分别代表:
1、进气孔；2、气体流动沟槽；3、气体回收孔；4、加热盘。
下面结合附图和实施例对本发明作进一步的说明。
具体实施方式
实施例
如图1所示，一种窗花形表面结构的可控温加热盘，包括加热盘4，所述加热盘4的中心设有进气孔1，热传导介质从加热盘4中心的进气孔1进入加热盘表面，在中心一个圆形空间用来释放气体进入时压力。所述加热盘4的边缘设有气体回收孔3。上述加热盘4的表面制有窗花形布局的气体流动沟槽2，使热传导介质通过多条径向沟槽从中间流动到加热盘4的边缘区域，并有圆周方向分布的沟槽与径向沟槽联通，使得导热介质之间的流动与导通更顺畅，解决因各介质所流经空间不同而造成的温度不均匀现象，以精确控制晶圆温度。气体最终会在加热盘4边缘的气体回收孔3中从加热盘4内部返回至导热介质冷却装置，并在其中实现冷却，以便将多余的热量带走。冷却后的气体会再次从加热盘中心流入，以实现导热介质的循环流动。也可将加热盘外圆的沟槽设计成开放式，使导热介质直接扩散至腔室空间而不收集介质重新进行循环。

Claims (2)

1.一种窗花形表面结构的可控温加热盘，包括加热盘，其特征在于：所述加热盘的中心设有进气孔及边缘设有气体回收孔；所述加热盘的表面制有窗花形布局的气体流动沟槽，其圆周方向分布的沟槽与径向沟槽联通。
2.如权利要求1所述的窗花形表面结构的可控温加热盘，其特征在于：所述加热盘表面制有的沟槽为封闭式或开放式结构。
CN201510206517.0A 2015-04-27 2015-04-27 一种窗花形表面结构的可控温加热盘 Pending CN104835762A (zh)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106609365A (zh) * 2015-10-22 2017-05-03 沈阳拓荆科技有限公司 一种半导体镀膜设备用双通道控温装置
CN106609364A (zh) * 2015-10-22 2017-05-03 沈阳拓荆科技有限公司 带有循环媒介自动控温结构的薄膜沉积设备加热底盘
CN106609354A (zh) * 2015-10-22 2017-05-03 沈阳拓荆科技有限公司 一种半导体镀膜设备可控温基台
CN114318304A (zh) * 2021-12-27 2022-04-12 拓荆科技股份有限公司 一种加热盘结构
WO2023045788A1 (zh) * 2021-09-22 2023-03-30 北京北方华创微电子装备有限公司 静电卡盘及半导体加工设备

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JPH0487321A (ja) * 1990-07-31 1992-03-19 Japan Synthetic Rubber Co Ltd 真空処理装置の被処理物保持装置
JP2002141332A (ja) * 2000-10-30 2002-05-17 Hitachi Ltd 半導体製造装置
US20020069820A1 (en) * 2000-12-08 2002-06-13 Applied Materials, Inc. Heater with detachable ceramic top plate
CN1937203A (zh) * 2005-12-08 2007-03-28 北京北方微电子基地设备工艺研究中心有限责任公司 一种静电卡盘
CN201311921Y (zh) * 2008-09-08 2009-09-16 力鼎精密股份有限公司 晶圆承载装置
CN102044411A (zh) * 2009-10-13 2011-05-04 东京毅力科创株式会社 基板冷却装置、基板冷却方法及存储介质

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Publication number Priority date Publication date Assignee Title
JPH0487321A (ja) * 1990-07-31 1992-03-19 Japan Synthetic Rubber Co Ltd 真空処理装置の被処理物保持装置
JP2002141332A (ja) * 2000-10-30 2002-05-17 Hitachi Ltd 半導体製造装置
US20020069820A1 (en) * 2000-12-08 2002-06-13 Applied Materials, Inc. Heater with detachable ceramic top plate
CN1937203A (zh) * 2005-12-08 2007-03-28 北京北方微电子基地设备工艺研究中心有限责任公司 一种静电卡盘
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106609365A (zh) * 2015-10-22 2017-05-03 沈阳拓荆科技有限公司 一种半导体镀膜设备用双通道控温装置
CN106609364A (zh) * 2015-10-22 2017-05-03 沈阳拓荆科技有限公司 带有循环媒介自动控温结构的薄膜沉积设备加热底盘
CN106609354A (zh) * 2015-10-22 2017-05-03 沈阳拓荆科技有限公司 一种半导体镀膜设备可控温基台
WO2023045788A1 (zh) * 2021-09-22 2023-03-30 北京北方华创微电子装备有限公司 静电卡盘及半导体加工设备
CN114318304A (zh) * 2021-12-27 2022-04-12 拓荆科技股份有限公司 一种加热盘结构
CN114318304B (zh) * 2021-12-27 2023-11-24 拓荆科技股份有限公司 一种加热盘结构

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