CN104830234A - A-directional sapphire mobile phone cover plate polishing solution and preparation method thereof - Google Patents
A-directional sapphire mobile phone cover plate polishing solution and preparation method thereof Download PDFInfo
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- CN104830234A CN104830234A CN201510196599.5A CN201510196599A CN104830234A CN 104830234 A CN104830234 A CN 104830234A CN 201510196599 A CN201510196599 A CN 201510196599A CN 104830234 A CN104830234 A CN 104830234A
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- mobile phone
- cover plate
- phone cover
- polishing fluid
- sapphire
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to an A-directional sapphire mobile phone cover plate polishing solution and a preparation method thereof. The polishing solution is a water fluid suspension and comprises ingredients shown in the following description according to a mass percent. The A-directional sapphire mobile phone cover plate polishing solution polishes an A-directional sapphire mobile phone cover plate so that surface roughness of the A-directional sapphire mobile phone cover plate is less 0.3nm, a polishing rate is more than 2 micrometers per hour, and scratch, orange-peel and concave-convex surface defects are effectively eliminated.
Description
Technical field
The present invention relates to the Double-Sided Polishing Technology of Sapphire mobile phone cover plate, in particular, relate to a kind of A to Sapphire mobile phone cover plate polishing fluid and preparation method.
Background technology
Sapphire crystal is because direction of growth difference (along C axle or A axle), A can be divided into sapphire crystal and C to sapphire crystal, A meets to sapphire crystal the principle that crystal growth direction selects the closeest of atom, A will far away higher than the sapphire crystal of C to growth to the average quality of sapphire crystal, so existing C is used for the polishing of A to Sapphire mobile phone cover plate to Sapphire mobile phone cover plate polishing fluid, polishing speed is low, and hand-set lid surface quality is not good.
A is applied on i Phone rear camera lens and fingerprint chip to sapphire wafer by current American apple company.In future, Apple will probably replace alumina silicate glass material with A to sapphire wafer, become iPhone mobile phone screen, and the existing company such as Huawei, Gionee has adopted A to sapphire wafer as hand-set lid now.Research shows that A is low to the removal speed of Sapphire mobile phone cover plate, surface quality is poor, tooling cost is high.
Present stage is less to the report of sapphire polishing liquid about A, such as, Chinese patent (application number 201410294295.8) " a kind of Sapphire mobile phone panel A is to polishing fluid preparation method " is mentioned and is employed polishing fluid, but in full its component is not reported, just simply set forth the processing requirement of polishing, and processing requirement needed for polishing is all higher than current mean level (ML).In order to meet the demand of Sapphire mobile phone panel development, having the A that removal amount is high, surface quality is good becomes major issue anxious to be resolved to sapphire chemical mechanical polishing liquid.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of A to Sapphire mobile phone cover plate polishing fluid and preparation method, removes the technical problems such as speed is low, surface quality is poor to solve in existing polishing process.
The technical scheme that the present invention solves the problems of the technologies described above is: provide a kind of A to Sapphire mobile phone cover plate polishing fluid, described polishing fluid is aqeous suspension, comprises the component of following mass percent:
At A provided by the invention in Sapphire mobile phone cover plate polishing fluid, in described silicon sol, silica dioxide granule is of a size of 40 ~ 110 nanometers.
At A provided by the invention in Sapphire mobile phone cover plate polishing fluid, described complexing agent is at least one in glycine, citric acid, ethylenediamine tetraacetic acid (EDTA), tartrate.
At A provided by the invention in Sapphire mobile phone cover plate polishing fluid, described polishing auxiliary agent is the one in persulphate, iodate, perchlorate.
At A provided by the invention in Sapphire mobile phone cover plate polishing fluid, described tensio-active agent is at least one in cetyl trimethylammonium bromide, octyl phenyl polyoxyethylene ether, polyoxyethylene nonylphenol ether, sodium polyacrylate.
At A provided by the invention in Sapphire mobile phone cover plate polishing fluid, described defoamer is at least one in methyl-silicone oil, polyethers.
At A provided by the invention in Sapphire mobile phone cover plate polishing fluid, described polishing fluid also comprises pH adjusting agent, described pH adjusting agent is the one in trolamine, sodium carbonate, Tetramethylammonium hydroxide, quadrol, sodium hydroxide, regulates pH value to 8.5 ~ 11 of described polishing fluid.
The present invention also provides a kind of A to the preparation method of Sapphire mobile phone cover plate polishing fluid, under stirring, silicon sol is added to dispersion dilution in deionized water, then polishing auxiliary agent, complexing agent, tensio-active agent, defoamer, pH adjusting agent is added successively, wherein, the mass percent of each component is as follows:
Implement the present invention, there is following beneficial effect: use polishing fluid provided by the invention to carry out polishing to A to Sapphire mobile phone cover plate, A can be made to be less than 0.3nm to the surfaceness of sapphire cover plate, polishing speed is greater than 2 μm/hr, and effectively can eliminate cut, orange peel, the surface imperfection such as concavo-convex.
Embodiment
Below in conjunction with embodiment, the technical scheme in the embodiment of the present invention is clearly and completely described.
A will far away higher than the sapphire crystal of C to growth to the average quality of sapphire crystal, A is to the good market prospects of Sapphire mobile phone cover plate, but A is comparatively large to Sapphire mobile phone cover plate difficulty of processing, and C can not be used for A to Sapphire mobile phone cover plate polishing fluid and produce to the polishing of Sapphire mobile phone cover plate.Main innovate point of the present invention is: provide a kind of A to Sapphire mobile phone cover plate polishing fluid and preparation method, use silicon sol as the polishing fluid primary abrasive of A to the chemically machinery polished of Sapphire mobile phone cover plate, coordinate the auxiliary such as complexing agent, polishing auxiliary agent, complete the CMP (Chemical Mechanical Polishing) process of A to Sapphire mobile phone cover plate fast and efficiently, polishing effect is good, good article rate is high.
In preferred embodiment provided by the invention, A is aqeous suspension to Sapphire mobile phone cover plate polishing fluid, comprises the component of following mass percent:
In the present embodiment, said components is dispersed into uniform suspension in water, and in addition to the above components, surplus is water, and the part namely less than 100% can be all water.Silicon sol, as primary abrasive, coordinates polishing mechanical and A to the effect of Sapphire mobile phone lid surface generation physical friction, plays polishing action.Containing complexing agent and polishing auxiliary agent in polishing fluid, its complexing agent can form the complex compound that can dissolve or the little complex compound of hardness with A to the aluminum ion in Sapphire mobile phone cover plate, under the mechanical effect of polishing machine, along with the flowing of polishing fluid, depart from Sapphire wafer surface, the burr of quick elimination Sapphire wafer surface, coarse position, thus raising polishing speed, in addition, complexing agent can also prevent polishing material surface from staining or adsorbing, the selection of complexing agent to A to the very important meaning of Sapphire mobile phone cover plate chemically machinery polished.Simultaneously, polishing auxiliary agent itself be not with sapphire generation chemical reaction, there is stronger oxidation susceptibility, but it can play the effect of similar catalyzer, complexing agent and the aluminum ion in sapphire wafer are in and a kind ofly compare active state, accelerate chemical reaction rate, thus improve polishing speed.Tensio-active agent and defoamer exist, and make polishing process have stable, uniform solution environmental, ensure the consistence of product.
In another preferred embodiment provided by the invention, described polishing fluid has the component of above-mentioned mass percent, specifically in described silicon sol, silica dioxide granule is of a size of 40 ~ 110 nanometers, preferred, in silicon sol, silica dioxide granule is of a size of 80 ~ 110 nanometers, to provide enough physical friction effects.In addition, the preferred mass percent of described silicon sol is 10% ~ 20%.
In another preferred embodiment provided by the invention, in described polishing fluid, described complexing agent is at least one in glycine, citric acid, ethylenediamine tetraacetic acid (EDTA) (hereinafter referred to as EDTA), tartrate, and the preferred mass percent of described complexing agent is 0.5% ~ 1%.
In another preferred embodiment provided by the invention, in described polishing fluid, described polishing auxiliary agent is the one in persulphate, iodate, perchlorate, and the preferred mass percent of described polishing auxiliary agent is 0.1% ~ 1%.The persulphate selected, iodate, perchlorate with sylvite, sodium salt, ammonium salt for the best, such as, persulphate can be Potassium Persulphate, Sodium Persulfate, ammonium persulphate, iodate can be Potassium Iodate, sodium iodate, ammonium iodate, and perchlorate can be potassium perchlorate, sodium perchlorate, ammoniumper chlorate.
In another preferred embodiment provided by the invention, in described polishing fluid, described tensio-active agent is cetyl trimethylammonium bromide (hereinafter referred to as CTAB), octyl phenyl polyoxyethylene ether (triton x-100, hereinafter referred to as X-100), at least one in polyoxyethylene nonylphenol ether (hereinafter referred to as TX-10), sodium polyacrylate (hereinafter referred to as PAAS), the preferred mass percent of described tensio-active agent is 0.1% ~ 0.5%.
In another preferred embodiment provided by the invention, in described polishing fluid, described defoamer is at least one in methyl-silicone oil, polyethers, and the preferred mass percent of described defoamer is 0.01% ~ 0.05%.
In another preferred embodiment provided by the invention, in described polishing fluid, described pH adjusting agent is the one in trolamine, sodium carbonate, Tetramethylammonium hydroxide, quadrol, sodium hydroxide, regulates pH value to 8.5 ~ 11 of described polishing fluid.
Embodiment 1-5
Under mechanical agitation, silicon sol is added to dispersion dilution in deionized water, then adds polishing auxiliary agent, complexing agent, tensio-active agent, defoamer successively, and use pH adjusting agent to regulate the pH value of polishing fluid, wherein concrete proportioning is in table 1.
Each component proportion in table 1. embodiment 1-5
Adopt above-mentioned polishing fluid to carry out chemically machinery polished to A to Sapphire mobile phone cover plate, processing condition are in table 2:
The processing condition of table 2. embodiment and comparative example
| Polishing machine | HAMAI-16B (two-sided) |
| Card size (mm) | 1160 |
| Polishing pad | SUBA 800 |
| Rotating speed (rpm) | 35 |
| Pressure (g/cm 2) | 300 |
| Polishing fluid flow (L/min) | 1 |
| Polishing time (min) | 150 |
| Workpiece to be machined | 5.5 cun of Sapphire mobile phone cover plates (A to) |
After polishing completes, with clean-out system, supersound washing and drying are carried out to Sapphire mobile phone cover plate, then detect surface topography and the polishing speed of cover plate.Thickness difference before and after polishing is measured with of poor quality, comprehensive evaluation removal speed with electronic microcalliper and precision balance; Adopt atomic force microscope lid surface quality, the results are shown in Table 3.
The polish results of table 3. embodiment and comparative example
A provided by the invention is to the preparation method of Sapphire mobile phone cover plate polishing fluid, technique is simple, be easy to produce, adopt preparation method's gained polishing fluid provided by the invention to carry out polishing to A to Sapphire mobile phone cover plate, good surface quality and higher removal speed can be obtained.
Obviously, above-described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of protection of the invention.
Claims (8)
1.A, to Sapphire mobile phone cover plate polishing fluid, is characterized in that, described polishing fluid is aqeous suspension, comprises the component of following mass percent:
2. A according to claim 1 is to Sapphire mobile phone cover plate polishing fluid, it is characterized in that, in described silicon sol, silica dioxide granule is of a size of 40 ~ 110 nanometers.
3. A according to claim 1 is to Sapphire mobile phone cover plate polishing fluid, it is characterized in that, described complexing agent is at least one in glycine, citric acid, ethylenediamine tetraacetic acid (EDTA), tartrate.
4. A according to claim 1 is to Sapphire mobile phone cover plate polishing fluid, it is characterized in that, described polishing auxiliary agent is the one in persulphate, iodate, perchlorate.
5. A according to claim 1 is to Sapphire mobile phone cover plate polishing fluid, it is characterized in that, described tensio-active agent is at least one in cetyl trimethylammonium bromide, octyl phenyl polyoxyethylene ether, polyoxyethylene nonylphenol ether, sodium polyacrylate.
6. A according to claim 1 is to Sapphire mobile phone cover plate polishing fluid, it is characterized in that, described defoamer is at least one in methyl-silicone oil, polyethers.
7. A according to claim 1 is to Sapphire mobile phone cover plate polishing fluid, it is characterized in that, described polishing fluid also comprises pH adjusting agent, described pH adjusting agent is the one in trolamine, sodium carbonate, Tetramethylammonium hydroxide, quadrol, sodium hydroxide, regulates pH value to 8.5 ~ 11 of described polishing fluid.
8.A, to the preparation method of Sapphire mobile phone cover plate polishing fluid, is characterized in that, under stirring, silicon sol is added to dispersion dilution in deionized water, then add polishing auxiliary agent, complexing agent, tensio-active agent, defoamer successively, wherein, the mass percent of each component is as follows:
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105111942A (en) * | 2015-09-10 | 2015-12-02 | 郑州磨料磨具磨削研究所有限公司 | Micro-crystallization sapphire polishing solution |
| CN105462504A (en) * | 2015-12-11 | 2016-04-06 | 蓝思科技（长沙）有限公司 | C-direction sapphire polishing solution and preparation method thereof |
| CN105463466A (en) * | 2015-11-22 | 2016-04-06 | 全椒县志宏机电设备设计有限公司 | Polishing liquid for stainless steel mechanical equipment and preparing method of polishing liquid |
| CN105505316A (en) * | 2015-12-23 | 2016-04-20 | 北京国瑞升科技股份有限公司 | Grinding auxiliary and grinding liquid for coarse grinding of sapphire and preparation methods of grinding auxiliary and grinding liquid |
| CN105575794A (en) * | 2016-03-09 | 2016-05-11 | 德米特（苏州）电子环保材料有限公司 | Neutral polishing liquid and preparation method thereof |
| CN106700944A (en) * | 2016-12-09 | 2017-05-24 | 北京国瑞升科技股份有限公司 | Synthetic alkali, A-direction sapphire polishing solution and preparation method thereof |
| CN106883769A (en) * | 2017-04-17 | 2017-06-23 | 黄美香 | A kind of Ludox polishing fluid |
| CN107189693A (en) * | 2017-05-12 | 2017-09-22 | 江南大学 | A kind of A is to sapphire chemically mechanical polishing polishing fluid and preparation method thereof |
| CN107987732A (en) * | 2017-12-19 | 2018-05-04 | 北京航天赛德科技发展有限公司 | A kind of polishing fluid for sapphire plane polishing and preparation method thereof |
| CN107987731A (en) * | 2017-12-19 | 2018-05-04 | 北京航天赛德科技发展有限公司 | A kind of polishing fluid for sapphire 3D polishings and preparation method thereof |
| CN116063929A (en) * | 2023-01-03 | 2023-05-05 | 广东粤港澳大湾区黄埔材料研究院 | A-direction sapphire substrate polishing solution and preparation method thereof |
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| CN104449399A (en) * | 2014-11-25 | 2015-03-25 | 河北工业大学 | Chemical mechanical polishing composite applicable to A side of sapphire |
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| CN103450812A (en) * | 2013-01-10 | 2013-12-18 | 湖南皓志新材料股份有限公司 | Polishing solution for sapphire substrate |
| CN104109480A (en) * | 2013-04-18 | 2014-10-22 | 天津西美半导体材料有限公司 | Sapphire substrate polishing agent used for double-side polishing machine |
| CN104449399A (en) * | 2014-11-25 | 2015-03-25 | 河北工业大学 | Chemical mechanical polishing composite applicable to A side of sapphire |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105111942B (en) * | 2015-09-10 | 2017-06-30 | 郑州磨料磨具磨削研究所有限公司 | Micro-crystallization sapphire polishing liquid |
| CN105111942A (en) * | 2015-09-10 | 2015-12-02 | 郑州磨料磨具磨削研究所有限公司 | Micro-crystallization sapphire polishing solution |
| CN105463466A (en) * | 2015-11-22 | 2016-04-06 | 全椒县志宏机电设备设计有限公司 | Polishing liquid for stainless steel mechanical equipment and preparing method of polishing liquid |
| CN105462504A (en) * | 2015-12-11 | 2016-04-06 | 蓝思科技（长沙）有限公司 | C-direction sapphire polishing solution and preparation method thereof |
| CN105505316A (en) * | 2015-12-23 | 2016-04-20 | 北京国瑞升科技股份有限公司 | Grinding auxiliary and grinding liquid for coarse grinding of sapphire and preparation methods of grinding auxiliary and grinding liquid |
| CN105575794A (en) * | 2016-03-09 | 2016-05-11 | 德米特（苏州）电子环保材料有限公司 | Neutral polishing liquid and preparation method thereof |
| CN106700944B (en) * | 2016-12-09 | 2018-08-21 | 北京国瑞升科技股份有限公司 | A kind of synthetic alkali, A are to sapphire polishing liquid and preparation method thereof |
| CN106700944A (en) * | 2016-12-09 | 2017-05-24 | 北京国瑞升科技股份有限公司 | Synthetic alkali, A-direction sapphire polishing solution and preparation method thereof |
| CN106883769A (en) * | 2017-04-17 | 2017-06-23 | 黄美香 | A kind of Ludox polishing fluid |
| CN107189693A (en) * | 2017-05-12 | 2017-09-22 | 江南大学 | A kind of A is to sapphire chemically mechanical polishing polishing fluid and preparation method thereof |
| CN107189693B (en) * | 2017-05-12 | 2021-12-28 | 江南大学 | Polishing solution for chemical mechanical polishing of A-direction sapphire and preparation method thereof |
| CN107987731A (en) * | 2017-12-19 | 2018-05-04 | 北京航天赛德科技发展有限公司 | A kind of polishing fluid for sapphire 3D polishings and preparation method thereof |
| CN107987732A (en) * | 2017-12-19 | 2018-05-04 | 北京航天赛德科技发展有限公司 | A kind of polishing fluid for sapphire plane polishing and preparation method thereof |
| CN107987732B (en) * | 2017-12-19 | 2019-12-24 | 北京航天赛德科技发展有限公司 | Polishing solution for sapphire plane polishing and preparation method thereof |
| CN107987731B (en) * | 2017-12-19 | 2020-05-22 | 北京航天赛德科技发展有限公司 | Polishing solution for 3D polishing of sapphire and preparation method thereof |
| CN116063929A (en) * | 2023-01-03 | 2023-05-05 | 广东粤港澳大湾区黄埔材料研究院 | A-direction sapphire substrate polishing solution and preparation method thereof |
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Application publication date: 20150812 |