CN104829981A

CN104829981A - Teflon-based compact heat dissipation material for LED light source and preparation method thereof

Info

Publication number: CN104829981A
Application number: CN201510160366.XA
Authority: CN
Inventors: 张英才; 刘德时
Original assignee: Anhui Bo Chang Electronics Technology Limited-Liability Co
Current assignee: Mingguang Taiyuan Security Technology Co. Ltd.
Priority date: 2015-04-07
Filing date: 2015-04-07
Publication date: 2015-08-12

Abstract

The invention relates to a LED heat radiation material and especially relates to a Teflon-based compact heat dissipation material for a LED light source and a preparation method thereof. The Teflon-based compact heat dissipation material is prepared from 2-4 parts by weight of acetylene black, 4-6 parts by weight of silica sol with solid content of 20-25%, 6-8 parts by weight of aluminum oxide micro-powder of 120-325 meshes, 1-2 parts by weight of nanometer boron nitride, 10-14 parts by weight of a PVA emulsion with solid content of 15-20%, 20-30 parts by weight of an ethanol aqueous solution with content of 5%, 1-2 parts by weight of strontium polyphosphate, 1-3 parts by weight of aluminum-magnesium silicate, 20-25 parts by weight of aluminum nitride micro-powder of 400-600 meshes, 40-50 parts by weight of Teflon micro-powder of 200-300 meshes and 2-3 parts by weight of an assistant. The LED heat radiation material has the advantages of high efficiency, uniform and stable thermal conductivity, environment corrosion resistance, light aging resistance, cleanliness, stain resistance, safety, insulation, compactness and cutting easiness and is an ideal LED lamp heat radiation material.

Description

A kind of LED light source fine and close heat sink material of polytetrafluoroethylene (PTFE) base and preparation method thereof

Technical field

The present invention relates to LED heat sink material, be specifically related to fine and close heat sink material of a kind of LED light source polytetrafluoroethylene (PTFE) base and preparation method thereof and production method thereof.

Background technology

LED is the abbreviation of photodiode, be a kind of be the semiconductor electronic component of luminous energy by electric energy conversion, there is volume little, life-span is long, current consumption is low, speed of response is fast, luminous efficiency is high, the advantages such as energy-conserving and environment-protective, it is the product of the most competitive power of the conventional light source as an alternative of generally acknowledging in the industry, also be widely used in real life, still there is many problems in current LED product, wherein heat dissipation problem is the most important thing always, common heat sink material mostly is high-thermal conductive metal, high heat conduction inorganic materials and the composite sintering of these materials form, it is large to there is excision forming difficulty in these materials, cost is higher, be subject to the shortcomings such as environmental corrosion, and with plastics and the composite heat sink material made of heat conductive filler, good radiating effect can be played, the environmental compatibility of material can be improved again, reach the use properties of efficient stable.

Tetrafluoroethylene has high temperature resistant, resistance to chemical attack, the plurality of advantages such as easy to clean, is described as the king of plastics; Aluminium nitride good heat conductivity, thermal expansivity is little, and the heat sink material being base-material mixed sintering with both can make up the defect that traditional LED dispels the heat, and has outstanding use properties.

Summary of the invention

The object of the invention is to, provide fine and close heat sink material of a kind of LED light source polytetrafluoroethylene (PTFE) base and preparation method thereof, to achieve these goals, the technical solution used in the present invention is as follows:

A kind of LED light source fine and close heat sink material of polytetrafluoroethylene (PTFE) base and preparation method thereof, it is characterized in that, material of the present invention is made up of the raw material of following weight part: PVA emulsion 10-14,5% aqueous ethanolic solution 20-30 that silicon sol 4-6,120-325 order aluminium oxide powder 6-8, nm-class boron nitride 1-2 that acetylene black 2-4, solid content are 20-25%, solid content are 15-20%, polyphosphoric acid strontium 1-2, neusilin 1-3,400-600 order aluminium nitride micro mist 20-25,200-300 order ptfe micropowder 40-50, auxiliary agent 2-3.

Described auxiliary agent is made up of the raw material of following weight part: silane coupling agent kh550 6-8, potassium methyl silicate 1-2, titanium acetylacetone (25% isopropanol water solution) 1-3, nano silicon 3-4, sodium hydroxide 0.1-0.2, water 20-25, preparation method is: be first dissolved in by sodium hydroxide in appropriate water, be mixed with the solution that pH value is 10-11, add nano silicon subsequently, ultrasonic immersion 40-50min, powder after alkaline purification is washed to neutral rear dry, and add water and be mixed with colloidal sol, again other leftover materials are mixed with the silicon dioxide gel of preparation subsequently, high-speed stirring dispersion 60-80min, obtain.

Fine and close heat sink material of described a kind of LED light source polytetrafluoroethylene (PTFE) base and preparation method thereof, its preparation method is:

(1) first nm-class boron nitride is dropped in silicon sol, ultrasonic disperse 40-50min, make nano-powder dispersed in colloidal sol, add acetylene black more subsequently, high-speed stirring dispersion 40-50min, after material is completely dispersed, gained mixture is at 100-120 DEG C of condition thermal treatment 4-6h, material grinding distribution 20-30min after thermal treatment terminates, gained powder is for subsequent use;

(2) ptfe micropowder is dropped in aqueous ethanolic solution, be uniformly mixed 40-50min, then add PVA emulsion, continue to be uniformly mixed 20-30min, finally add step (1) gained material and other leftover materials again, mixed grinding dispersion 2-3h, compression moulding after material mixes completely, shaping rear base substrate blowing 15-20h under 50-60 DEG C of condition, remove moisture completely, gained base substrate fires 30-40min under 350-380 DEG C of condition, is cooled to room temperature subsequently, to obtain final product.

The invention has the advantages that: using PVA emulsion as binding agent, and with aqueous ethanolic solution, moist curing is carried out to polytetrafluoroethylpowder powder surface, improve the viscosifying power between raw material, and the acetylene black loaded with nano boron nitride powder that thermal treatment obtains effectively raises the heat dispersion of matrix material, the auxiliary agent of interpolation helps effect that raw material is compatible, help sintering; Plastic base heat sink material prepared by the present invention has efficient, even, stable thermal conductivity, environmental corrosion resisting, light aging resisting, and cleaning bears dirty, safe insulation, fine and close consolidation, and being easy to processing and cutting, is a kind of desirable LED lamp heat sink material.

Embodiment

The present embodiment heat sink material is made up of following raw material: PVA emulsion 14,5% aqueous ethanolic solution 30, polyphosphoric acid strontium 2, neusilin 3,400 order aluminium nitride micro mist 25,300 order ptfe micropowder 50, auxiliary agent 3 that silicon sol 6, the 250 order aluminium oxide powder 8 that acetylene black 4, solid content are 25%, nm-class boron nitride 2, solid content are 20%.

Described auxiliary agent is made up of the raw material of following weight part: silane coupling agent kh550 8, potassium methyl silicate 1, titanium acetylacetone (25% isopropanol water solution) 2, nano silicon 4, sodium hydroxide 0.2, water 25, preparation method is: be first dissolved in by sodium hydroxide in appropriate water, be mixed with the solution that pH value is 10.5, add nano silicon subsequently, ultrasonic immersion 50min, powder after alkaline purification is washed to neutral rear dry, and add water and be mixed with colloidal sol, again other leftover materials are mixed with the silicon dioxide gel of preparation subsequently, high-speed stirring dispersion 65min, obtain.

(1) first nm-class boron nitride is dropped in silicon sol, ultrasonic disperse 50min, make nano-powder dispersed in colloidal sol, add acetylene black more subsequently, high-speed stirring dispersion 45min, after material is completely dispersed, gained mixture is at 100-120 DEG C of condition thermal treatment 5h, material grinding distribution 30min after thermal treatment terminates, gained powder is for subsequent use;

(2) ptfe micropowder is dropped in aqueous ethanolic solution, be uniformly mixed 50min, then add PVA emulsion, continue to be uniformly mixed 30min, finally add step (1) gained material and other leftover materials again, mixed grinding dispersion 3h, compression moulding after material mixes completely, shaping rear base substrate blowing 18h under 50-60 DEG C of condition, remove moisture completely, gained base substrate fires 40min under 350-380 DEG C of condition, is cooled to room temperature subsequently, to obtain final product.

It is as follows that material obtained by the present embodiment tests according to relevant criterion the performance index obtained:

Tensile strength is: 56.8MPa; Elongation at break: 0.48%; Dielectric strength: 22KV/mm; Thermal conductivity is 5.5W/m.k; Thermal diffusivity is 28.7mm ²/ s; The more single tetrafluoroethylene of thermal linear expansion coefficient reduces 82%; Illumination aging resisting performance grade: 4.5 grades.

Claims

1. LED light source fine and close heat sink material of polytetrafluoroethylene (PTFE) base and preparation method thereof, it is characterized in that, this material is made up of the raw material of following weight part: PVA emulsion 10-14,5% aqueous ethanolic solution 20-30 that silicon sol 4-6,120-325 order aluminium oxide powder 6-8, nm-class boron nitride 1-2 that acetylene black 2-4, solid content are 20-25%, solid content are 15-20%, polyphosphoric acid strontium 1-2, neusilin 1-3,400-600 order aluminium nitride micro mist 20-25,200-300 order ptfe micropowder 40-50, auxiliary agent 2-3;

2. fine and close heat sink material of a kind of LED light source polytetrafluoroethylene (PTFE) base as claimed in claim 1 and preparation method thereof, its preparation method is: