CN104810357A - 一种显示器、背光模组及led光源装置 - Google Patents

一种显示器、背光模组及led光源装置 Download PDF

Info

Publication number
CN104810357A
CN104810357A CN201510154384.7A CN201510154384A CN104810357A CN 104810357 A CN104810357 A CN 104810357A CN 201510154384 A CN201510154384 A CN 201510154384A CN 104810357 A CN104810357 A CN 104810357A
Authority
CN
China
Prior art keywords
light source
led
source device
backlight module
led light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510154384.7A
Other languages
English (en)
Inventor
周福新
戴佳民
林文峰
陈宏桂
何方根
何基强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Truly Semiconductors Ltd
Original Assignee
Truly Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Truly Semiconductors Ltd filed Critical Truly Semiconductors Ltd
Priority to CN201510154384.7A priority Critical patent/CN104810357A/zh
Publication of CN104810357A publication Critical patent/CN104810357A/zh
Priority to PCT/CN2015/088244 priority patent/WO2016155219A1/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133609—Direct backlight including means for improving the color mixing, e.g. white
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Planar Illumination Modules (AREA)

Abstract

本发明公开了一种显示器、背光模组及LED光源装置，该LED光源装置包括：基板以及设置在所述基板上的至少一个蓝光LED；覆盖所述蓝光LED的出光侧的荧光粉层，所述荧光粉层包括红色荧光粉以及绿色荧光粉；其中，所述红色荧光粉的半波宽为2-10nm，包括端点值。所述LED光源通过采用蓝光LED激发红色荧光粉以及绿色荧光粉的方式形成白光，提高了白光中红光以及绿光的亮度，提高了亮度。并且红色荧光粉的半波宽为2-10nm，红光色纯度较好，不受其他红色波段干扰，可以提高红光的色域值，进而提高LED光源装置的NTSC色域范围，可以将LED光源装置的NTSC色域提高到90％以上。

Description

一种显示器、背光模组及LED光源装置
技术领域
本发明涉及发光装置技术领域，更具体地说，涉及一种显示器、背光模组及LED光源装置。
背景技术
发光二极管(Light Emitting Diode，简称LED)器件是一种可将电能转换为光能的能量转换器件，具有工作电压低、耗电量少、性能稳定、寿命长、抗冲击、耐震动性强、重量轻、体积小、成本低、发光响应快等优点。因此在显示装置的光源方面有广泛的应用，特别是近年来蓝色LED的迅速发展，使LED在照明领域取代白炽灯和荧光灯成为可能。
蓝色LED一般不直接应用在照明领域或是显示领域。特别的，在显示器中，其背光源必须是白光。目前，白光的产生常用方式是：通过蓝光LED激发黄色荧光粉，生成黄光，黄光中具有绿光以及蓝光成分，黄光与蓝光LED的蓝光形成白光。
传统的LED光源装置通过蓝光LED激发黄光荧光粉虽然可以生成白光，但是LED光源装置的NTSC(National Television Standards Committee)色域较窄，导致显示器的图像显示质量较差。
发明内容
为解决上述问题，本发明提供了一种显示器、背光模组及LED光源装置，提高了LED光源装置的色域范围，进而提高了显示器的图像显示质量。
为实现上述目的，本发明提供如下方案：
一种LED光源装置，该LED光源装置包括：
基板以及设置在所述基板上的至少一个蓝光LED；
覆盖所述蓝光LED的出光侧的荧光粉层，所述荧光粉层包括红色荧光粉以及绿色荧光粉；
其中，所述红色荧光粉的半波宽为2-10nm，包括端点值。
优选的，在上述LED光源装置中，所述红色荧光粉为Mn4+掺杂的K2SiF6红光荧光粉。
优选的，在上述LED光源装置中，所述LED光源装置的红光色域坐标为(X,Y)；
其中，X的取值范围是0.62-0.72，包括端点值；Y的取值范围是0.28-0.38，包括端点值。
优选的，在上述LED光源装置中，所述LED光源装置的红光色域坐标为(0.67,0.33)。
优选的，在上述LED光源装置中，根据权利要求1-4任一项所述的LED光源装置，其特征在于，所述红色荧光粉与所述绿色荧光粉通过硅胶涂覆在所述蓝光LED的出光侧。
本发明还提供了一种背光模组，该背光模组包括：
导光板以及光源；
其中，所述光源为上述任一项所述的LED光源装置。
优选的，在上述背光模组中，所述背光模组为直下式LED背光模组，所述光源设置在所述导光板的下表面；
或，所述背光模组为侧入式LED背光模组，所述光源设置在所述导光板的侧面。
本发明还提供了一种显示器，该显示器包括：
液晶显示模组以及背光模组；
其中，所述背光模组为上述任一项所述的背光模组。
通过上述描述可知，本发明提供的LED光源装置包括：基板以及设置在所述基板上的至少一个蓝光LED；覆盖所述蓝光LED的出光侧的荧光粉层，所述荧光粉层包括红色荧光粉以及绿色荧光粉；其中，所述红色荧光粉的半波宽为2-10nm，包括端点值。所述LED光源通过采用蓝光LED激发红色荧光粉以及绿色荧光粉的方式形成白光，提高了白光中红光以及绿光的亮度，提高了亮度。并且红色荧光粉的半波宽为2-10nm，红光色纯度较好，不受其他红色波段干扰，可以提高红光的色域值，进而提高LED光源装置的NTSC色域范围，可以将LED光源装置的NTSC色域提高到90％以上。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。
图1为采用蓝光LED激发黄色荧光粉的LED光源装置的发光图谱示意图；
图2为采用蓝光LED激发绿色荧光粉以及具有氮化物基磷光体的传统红色荧光粉的LED光源装置的发光图谱示意图；
图3为本申请实施例提供的一种LED光源装置的结构示意图；
图4为本申请实施例提供的LED光源装置的发光图谱示意图；
图5为本申请实施例提供的一种背光模组的结构示意图；
图6为本申请实施例提供的另一种背光模组的结构示意图；
图7为本申请实施例提供的一种显示器的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
参考图1，图1为采用蓝光LED激发黄色荧光粉的LED光源装置的发光图谱示意图。该种实施方式的NTSC色域一般为72％。参考图2，图2为采用蓝光LED激发绿色荧光粉以及具有氮化物基磷光体的传统红色荧光粉的LED光源装置的发光图谱示意图。该种实施方式可以将NTSC色域提高到83％。
在图1和图2中，纵轴为Emission intensity(发光强度)，各颜色光的发光强度为相对强度，纵轴单位为任意单位(Arbitrary Unit，简称a.u.)，以蓝光B的发光强度为1。横轴为Wavelength(波长)，单位为nm。图1中黄光Y的强度在0.35附近，黄光Y中红光R的强度小于0.2，黄光Y中绿光G的强度小于0.4。图2中，绿光G的强度为0.4，红光R的强度大于0.2。
发明人研究发现，虽然图2相对于图1，图2实施方式中NTSC色域具有一定的提高，但是具有氮化物基磷光体的传统红色荧光粉，如含(Ca,Sr)AlSiN3:Eu2+的红色荧光粉，或含Sr2Si5N8:Eu2+的红色荧光粉，半波宽一般为80nm-100nm，红光纯度较差，容易受到其他红色波段的干扰，导致LED光源装置的色域不稳定。且红光R的强度也只在0.2-0.25之间，强度较弱。
为解决上述问题，本申请实施例提供了一种LED光源装置，参考图3，图3为本申请实施例提供的一种LED光源装置的结构示意图，该LED光源装置包括：基板以及设置在所述基板上的至少一个蓝光LED2；覆盖所述蓝光LED2的出光侧的荧光粉层3，所述荧光粉层3包括红色荧光粉以及绿色荧光粉。其中，所述红色荧光粉的半波宽为2-10nm，包括端点值。
如图3所示，所述LED光源装置还包括设置在所述荧光粉层3表面的保护层，以防止荧光粉层受损，保证LED光源装置的使用寿命。
本申请实施例中，所述红色荧光粉为Mn4+掺杂的K2SiF6红光荧光粉。氮化物基磷光体的传统红色荧光粉，被激发时，红光的半波宽较大，易受到其他红色波段干扰，且强度较小。
相比于氮化物基磷光体的传统红色荧光粉，本实施例所述红色荧光粉只吸收蓝光，比吸收绿光，保证了最后发出的白光中绿光的强度，由于绿光为亮度的主要来源，故本实施例所述LED光源装置的亮度较好。本实施例所述红色荧光粉被激发后发射的红光半波宽度较小，且强度加大，因此，在NTSC图谱中，可以校正发射的白光中红光R的色域坐标。所述LED光源装置的红光色域坐标为(X,Y)。其中，X的取值范围是0.62-0.72，包括端点值；Y的取值范围是0.28-0.38，包括端点值。本实施例中，可以使得LED光源装置发射白光中红光R的色域坐标(0.67,0.33)为标准值，以提高LED光源装置的NTSC色域范围，进而提高图像显示质量。
本申请实施例中，所述红色荧光粉与所述绿色荧光粉通过硅胶涂覆在所述蓝光LED的出光侧。具体的，将所述红色荧光粉与所述绿色荧光粉均匀混合在硅胶中，然后涂覆在所述蓝光LED的出光侧，可以保证出射光的均匀性。
参考图4，图4为本申请实施例提供的LED光源装置的发光图谱示意图。通过图4所示发光图谱可知，本申请实施例所述LED光源装置与图2的实施方式相比，蓝光B无变化，绿光G的强度有所增加，使得LED光源装置亮度增大，且绿光G的半波宽减小，提高了绿光的色纯度。同时，红光R的强度大大提高，红光R的半波宽也大大减小，提高了NTSC的色域范围。
本申请实施例中，图1、图2以及图4所示光谱图示意图采用CIE1931色域标准。
本申请实施例还提供了一种背光模组，该背光模组包括：导光板以及光源。其中，所述光源为上述实施例所述的LED光源装置。本申请实施例所述背光模组的结构可以如图5所示或是如图6所示。
图5为本申请实施例提供的一种背光模组的结构示意图，图5所示背光模组为直下式LED背光模组，光源51设置在导光板52的下表面。图5中箭头表示表示光源51发射的白光。
图6为本申请实施例提供的另一种背光模组的结构示意图，图6所示背光模组为侧入式LED背光模组，光源61设置在导光板62的侧面。导光板62底面具有反射层，用于将光源61入射的白光发射，经过导光板62的上表面出射。
本申请实施例所述的背光模组采用上述实施例所述的光源装置，具有色纯度好，色域宽的优点。
本申请实施例还提供了一种显示器，参考图7，图7为本申请实施例提供的一种显示器的结构示意图，该显示器包括：液晶显示模组71以及背光模组72。其中，所述背光模组72为上述实施例任一种实施方式所述的背光模组。
本申请实施例所述显示器采用上述实施例所述的背光模组，因此具有色纯度好，色域宽的有点，图像显示效果好。
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (8)

1.一种LED光源装置，其特征在于，包括：
基板以及设置在所述基板上的至少一个蓝光LED；
覆盖所述蓝光LED的出光侧的荧光粉层，所述荧光粉层包括红色荧光粉以及绿色荧光粉；
其中，所述红色荧光粉的半波宽为2-10nm，包括端点值。
2.根据权利要求1所述的LED光源装置，其特征在于，所述红色荧光粉为Mn4+掺杂的K2SiF6红光荧光粉。
3.根据权利要求1所述的LED光源装置，其特征在于，所述LED光源装置的红光色域坐标为(X,Y)；
其中，X的取值范围是0.62-0.72，包括端点值；Y的取值范围是0.28-0.38，包括端点值。
4.根据权利要求3所述的LED光源装置，其特征在于，所述LED光源装置的红光色域坐标为(0.67,0.33)。
5.根据权利要求3所述的LED光源装置，其特征在于，根据权利要求1-4任一项所述的LED光源装置，其特征在于，所述红色荧光粉与所述绿色荧光粉通过硅胶涂覆在所述蓝光LED的出光侧。
6.一种背光模组，其特征在于，包括：
导光板以及光源；
其中，所述光源为权利要求1-5任一项所述的LED光源装置。
7.根据权利要求6所述的背光模组，其特征在于，所述背光模组为直下式LED背光模组，所述光源设置在所述导光板的下表面；
或，所述背光模组为侧入式LED背光模组，所述光源设置在所述导光板的侧面。
8.一种显示器，其特征在于，包括：
液晶显示模组以及背光模组；
其中，所述背光模组为权利要求6或7所述的背光模组。
CN201510154384.7A 2015-04-02 2015-04-02 一种显示器、背光模组及led光源装置 Pending CN104810357A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201510154384.7A CN104810357A (zh) 2015-04-02 2015-04-02 一种显示器、背光模组及led光源装置
PCT/CN2015/088244 WO2016155219A1 (zh) 2015-04-02 2015-08-27 一种显示器、背光模组及led光源装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510154384.7A CN104810357A (zh) 2015-04-02 2015-04-02 一种显示器、背光模组及led光源装置

Publications (1)

Publication Number Publication Date
CN104810357A true CN104810357A (zh) 2015-07-29

Family

ID=53695060

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510154384.7A Pending CN104810357A (zh) 2015-04-02 2015-04-02 一种显示器、背光模组及led光源装置

Country Status (2)

Country Link
CN (1) CN104810357A (zh)
WO (1) WO2016155219A1 (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105820441A (zh) * 2016-05-17 2016-08-03 东莞市鑫聚光电科技股份有限公司 一种高色域光扩散片及其生产工艺
WO2016155219A1 (zh) * 2015-04-02 2016-10-06 信利半导体有限公司 一种显示器、背光模组及led光源装置
CN107065297A (zh) * 2016-12-08 2017-08-18 郭少平 一种高色域显示屏背光工艺方法
CN109950379A (zh) * 2017-12-20 2019-06-28 深圳市聚飞光电股份有限公司 多面发光的芯片级封装led及其制作方法、背光模组
CN110456565A (zh) * 2019-07-31 2019-11-15 上海天马微电子有限公司 背光模组及制造方法、显示模组及制造方法和显示装置
CN113113527A (zh) * 2020-11-25 2021-07-13 友达光电股份有限公司 发光模块及使用该发光模块的显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101939857A (zh) * 2008-02-07 2011-01-05 三菱化学株式会社 半导体发光装置、背光源、彩色图像显示装置以及这些中使用的荧光体
CN102986044A (zh) * 2010-10-15 2013-03-20 三菱化学株式会社 白色发光装置及照明器具
TWI469396B (zh) * 2014-07-01 2015-01-11 Unity Opto Technology Co Ltd Applied to the backlight of the LED light-emitting structure
CN105355760A (zh) * 2014-11-11 2016-02-24 易美芯光（北京）科技有限公司 一种广色域显示的led器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100951274B1 (ko) * 2007-07-19 2010-05-06 삼성엘이디 주식회사 백라이트 유닛
CN102109697A (zh) * 2009-12-25 2011-06-29 康佳集团股份有限公司 一种液晶显示装置
CN102827601B (zh) * 2012-09-17 2014-08-20 中国科学院福建物质结构研究所 氟化物荧光粉体材料及其半导体发光器件
JP2015041633A (ja) * 2013-08-20 2015-03-02 船井電機株式会社 食品用照明装置および精肉用照明装置
CN104810357A (zh) * 2015-04-02 2015-07-29 信利半导体有限公司 一种显示器、背光模组及led光源装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101939857A (zh) * 2008-02-07 2011-01-05 三菱化学株式会社 半导体发光装置、背光源、彩色图像显示装置以及这些中使用的荧光体
CN102986044A (zh) * 2010-10-15 2013-03-20 三菱化学株式会社 白色发光装置及照明器具
TWI469396B (zh) * 2014-07-01 2015-01-11 Unity Opto Technology Co Ltd Applied to the backlight of the LED light-emitting structure
CN105355760A (zh) * 2014-11-11 2016-02-24 易美芯光（北京）科技有限公司 一种广色域显示的led器件

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016155219A1 (zh) * 2015-04-02 2016-10-06 信利半导体有限公司 一种显示器、背光模组及led光源装置
CN105820441A (zh) * 2016-05-17 2016-08-03 东莞市鑫聚光电科技股份有限公司 一种高色域光扩散片及其生产工艺
CN107065297A (zh) * 2016-12-08 2017-08-18 郭少平 一种高色域显示屏背光工艺方法
CN109950379A (zh) * 2017-12-20 2019-06-28 深圳市聚飞光电股份有限公司 多面发光的芯片级封装led及其制作方法、背光模组
CN109950379B (zh) * 2017-12-20 2021-04-06 芜湖聚飞光电科技有限公司 多面发光的芯片级封装led及其制作方法、背光模组
CN110456565A (zh) * 2019-07-31 2019-11-15 上海天马微电子有限公司 背光模组及制造方法、显示模组及制造方法和显示装置
CN113113527A (zh) * 2020-11-25 2021-07-13 友达光电股份有限公司 发光模块及使用该发光模块的显示装置
CN113113527B (zh) * 2020-11-25 2023-10-20 友达光电股份有限公司 发光模块及使用该发光模块的显示装置

Also Published As

Publication number Publication date
WO2016155219A1 (zh) 2016-10-06

Similar Documents

Publication Publication Date Title
CN104810357A (zh) 一种显示器、背光模组及led光源装置
US7964885B2 (en) White light emitting device and white light source module using the same
US10408426B2 (en) Method and apparatus to enhance spectral purity of a light source
TWI567167B (zh) 黃光螢光體及使用該黃光螢光體的發光裝置封裝
JP4945436B2 (ja) 白色発光ランプとそれを用いたバックライト、表示装置および照明装置
WO2014171394A1 (ja) 照明装置、照明機器および表示装置
US20130001628A1 (en) White light emitting lamp and white led lighting apparatus including the same
EP2104149A1 (en) White light emitting device and white light source module using the same
JP2010080935A (ja) 半導体発光装置及びこれを用いたバックライト光源、バックライト光源システム、表示装置、電子機器
JP2008140704A (ja) Ｌｅｄバックライト
KR101455595B1 (ko) 형광 조성물 및 이를 이용한 백색광 발광 장치
CN104241507A (zh) 广色域led发光器件及其背光组件
US10982824B2 (en) High color rendering D50/D65 standard LED illuminant module and lighting apparatus
CN108172677A (zh) 一种白光led器件及其制备方法、led闪光灯
JP2009036964A (ja) 液晶表示装置
CN105355760A (zh) 一种广色域显示的led器件
JP2002100229A (ja) 光源装置
CN101641801A (zh) 用于产生混合光的装置和方法
TW200705720A (en) Red phosphor and luminous element using the same
CN103486462A (zh) 照明装置
CN104696752A (zh) 一种发光二极管光源、背光模组、显示装置和照明装置
CN105482814A (zh) 含锰线性红光荧光材料及其光源装置
US9335011B2 (en) Oxyfluoride phosphor compositions and lighting apparatus thereof
KR102100193B1 (ko) 발광 장치
CN112331755A (zh) Led单元及其应用

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
EXSB Decision made by sipo to initiate substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20150729