CN104779142B - Selective epitaxial growth preprocess method - Google Patents
Selective epitaxial growth preprocess method Download PDFInfo
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- CN104779142B CN104779142B CN201510187339.1A CN201510187339A CN104779142B CN 104779142 B CN104779142 B CN 104779142B CN 201510187339 A CN201510187339 A CN 201510187339A CN 104779142 B CN104779142 B CN 104779142B
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- Prior art keywords
- epitaxial growth
- selective epitaxial
- layer
- substrate
- preprocess method
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000011241 protective layer Substances 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000007781 pre-processing Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 229960002050 hydrofluoric acid Drugs 0.000 description 9
- 238000000151 deposition Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- -1 400 angstroms Chemical compound 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Abstract
The present invention proposes a kind of selective epitaxial growth preprocess method; protective layer is formed in access opening; when being pre-processed afterwards to the substrate exposed; protective layer can protect the surface of access opening; avoid the formation of uneven; so as to ensure the performance of access opening after pre-processing, problems of the prior art are avoided.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of selective epitaxial growth preprocess method.
Background technology
, it is necessary to which very clean silicon face, can so ensure selective epitaxial deposition before selective epitaxial deposition
Quality.The original oxide layer of silicon face and other impurity can hinder the growth of selective epitaxial or cause the interface of growth not
It is good, so as to influence the conduction of electric current.
In the prior art, two kinds of traditional methods generally pre-process silicon face, so that silicon face meets choosing
The condition of selecting property epitaxial growth technology, specific pretreatment mode are as follows：
1) silicon face is pre-processed with SiCoNi.However, one side SiCoNi can make access opening become big, then need
Access opening critical size is made smaller in exposure, this condition to exposure is a challenge；Still further aspect, SiCoNi are clear
After reason, wafer rear has metal ion contamination, so as to pollute follow-up boiler tube board.
2) silicon face is pre-processed with the hydrofluoric acid of dilution.But etching of the hydrofluoric acid to the silica in access opening
The etch-rate of speed ratio silicon nitride is high, so as to cause access opening surface irregularity, to Electronic saving layer in further channel hole
Adversely affected with the deposition of unformed silicon passage, or even cause the fracture of passage.
Specifically, refer to Fig. 1 and Fig. 2, Fig. 1 and Fig. 2 are that silicon face is located in advance using hydrofluoric acid in the prior art
The structural representation of reason, wherein, there is provided silicon substrate 10, include interval formed with film layer, the film layer on silicon substrate 10
The multiple oxide layers 21 and nitration case 22, access opening 11 of arrangement are formed in the film layer, and expose silicon substrate 10 (as schemed
Shown in 1)；Then the silicon substrate 10 exposed is pre-processed using hydrofluoric acid, however, as mentioned previously, when using hydrogen
When fluoric acid cleans to silicon substrate 10, the oxide layer 21 in access opening 11 etches too fast, causes the concave-convex surface of access opening 11 not
Flat (as shown in Figure 2), adversely affects to subsequent technique.
The content of the invention
It is an object of the invention to provide a kind of selective epitaxial growth preprocess method, and silicon face can be located in advance
Reason, and ensure the performance of access opening.
To achieve these goals, the present invention proposes a kind of selective epitaxial growth preprocess method, including step：
Substrate is provided, formed with multi-layer thin film layer on the substrate, formed with access opening, the passage in the film layer
Hole exposes the substrate；
Layer protective layer is formed on the surface of the film layer, substrate and access opening；
Using the protective layer for being etched back to remove positioned at the film layer and substrate surface, retain in the access opening
Protective layer；
The substrate surface exposed is pre-processed using acid solution, while removes the protective layer；
Epitaxial layer is formed in the substrate surface using selective epitaxial growth.
Further, in described selective epitaxial growth preprocess method, the protective layer uses atom deposition method
Formed.
Further, in described selective epitaxial growth preprocess method, the protective layer material is silica.
Further, in described selective epitaxial growth preprocess method, the thickness of the protective layer for 30 angstroms~
50 angstroms.
Further, in described selective epitaxial growth preprocess method, using hydrofluoric acid to the substrate surface
Pre-processed, and remove the protective layer.
Further, in described selective epitaxial growth preprocess method, the substrate is silicon.
Further, it is described to be etched back to remove 300 angstroms~500 in described selective epitaxial growth preprocess method
Angstrom silicon.
Further, in described selective epitaxial growth preprocess method, the film layer is silica and nitridation
The stacked spaced apart arrangement of silicon thin film.
Further, in described selective epitaxial growth preprocess method, the epitaxial layer is silicon.
Compared with prior art, the beneficial effects are mainly as follows：Protective layer is formed in access opening, it is right afterwards
When the substrate exposed is pre-processed, protective layer can protect the surface of access opening, avoid the formation of it is uneven, so as to
Ensure the performance of access opening after pre-processing, avoid problems of the prior art.
Brief description of the drawings
Fig. 1 and Fig. 2 is the structural representation pre-processed in the prior art using hydrofluoric acid to silicon face；
Fig. 3 is the flow chart of selective epitaxial growth preprocess method in one embodiment of the invention；
Fig. 4 to Fig. 8 is the diagrammatic cross-section during selective epitaxial growth preprocess method in one embodiment of the invention.
Embodiment
The selective epitaxial growth preprocess method of the present invention is described in more detail below in conjunction with schematic diagram, its
In illustrate the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change invention described herein, and
Still the advantageous effects of the present invention are realized.Therefore, description below is appreciated that knowing extensively for those skilled in the art
Road, and it is not intended as limitation of the present invention.
For clarity, whole features of practical embodiments are not described.In the following description, it is not described in detail known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to a large amount of implementation details are made to realize the specific objective of developer, such as according to relevant system or relevant business
Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expended
Time, but it is only to those skilled in the art routine work.
More specifically description is of the invention by way of example referring to the drawings in the following passage.Will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that accompanying drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Fig. 3 is refer to, in the present embodiment, it is proposed that a kind of selective epitaxial growth preprocess method, including step：
S100：Substrate is provided, formed with multi-layer thin film layer on the substrate, formed with access opening, institute in the film layer
State access opening and expose the substrate；
S200：Layer protective layer is formed on the surface of the film layer, substrate and access opening；
S300：Using the protective layer for being etched back to remove positioned at the film layer and substrate surface, reservation is located at the passage
Protective layer in hole；
S400：The substrate surface exposed is pre-processed using acid solution, while removes the protective layer；
S500：Epitaxial layer is formed in the substrate surface using selective epitaxial growth.
Specifically, Fig. 4 is refer to, in the present embodiment, there is provided substrate 100, the substrate 100 are silicon；The film layer
Being arranged for the stacked spaced apart of silica 210 and the film of silicon nitride 220, the access opening 110 is formed in the film layer, and cruelly
Expose the surface of the substrate 100.
Fig. 5 is refer to, layer protective layer 400 is formed on the surface of the film layer, substrate 100 and access opening 110, it is described
Protective layer 400 is using atom deposition method (ALD) formation, and the material that the protective layer 400 is adopted can be silica, the protective layer
400 thickness is 30 angstroms~50 angstroms, for example, 40 angstroms.
Fig. 6 is refer to, using the protective layer 400 for being etched back to remove positioned at the film layer and the surface of substrate 100, reserved bit
Protective layer 400 in the access opening 110；It is now, described that be etched back to not only to remove partial protection layer 400 can also be to substrate
100 perform etching, and so as to remove 300 angstroms~500 angstroms of silicon, e.g. 400 angstroms, are so advantageous to subsequently carry out substrate 100
Pretreatment.
Fig. 7 is refer to, the surface of substrate 100 exposed is pre-processed using acid solution, forms pretreated groove
310, the silicon face in the groove 310 is more clean, is easy to be subsequently formed epitaxial layer, while acid solution can also remove the protection
Layer 400；Specifically, in the present embodiment, the surface of substrate 100 is pre-processed using hydrofluoric acid (HF), and remove institute
Protective layer 400 is stated, in this step, the time that hydrofluoric acid is pre-processed can be just to remove the protective layer completely
400, when not causing damage to the side wall of access opening 110, the oxide layer in access opening 110 is not caused to damage herein, therefore
Can ensure its it is off guard be etched into concavo-convex, so as to ensure the performance of access opening 110, be advantageous to follow-up technique and carry out.
Fig. 8 is refer to, epitaxial layer 110 is formed on the surface of substrate 100 using selective epitaxial growth, wherein, it is described
The material of epitaxial layer 110 is also silicon.More clean silicon face is formd in groove 310 due to above-mentioned, therefore, subsequently
More good contact can be formed during using selective epitaxial growth silicon, avoids the original oxide layer of silicon face and other impurity
The growth of selective epitaxial can be hindered or cause the interface of growth bad, so as to influence the conduction of electric current.
To sum up, in selective epitaxial growth preprocess method provided in an embodiment of the present invention, formed and protected in access opening
Sheath, when being pre-processed afterwards to the substrate exposed, protective layer can protect the surface of access opening, avoid the formation of bumps not
It is flat, so as to ensure the performance of access opening after pre-processing, avoid problems of the prior art.
The preferred embodiments of the present invention are above are only, any restrictions effect is not played to the present invention.Belonging to any
Those skilled in the art, in the range of technical scheme is not departed from, to the invention discloses technical scheme and
Technology contents make the variation such as any type of equivalent substitution or modification, belong to the content without departing from technical scheme, still
Belong within protection scope of the present invention.
Claims (8)
1. a kind of selective epitaxial growth preprocess method, it is characterised in that including step：
Substrate is provided, it is sudden and violent formed with access opening, the access opening in the film layer formed with multi-layer thin film layer on the substrate
Expose the substrate；
Layer protective layer is formed on the surface of the film layer, substrate and access opening, the protective layer material is silica；
Using the protective layer for being etched back to remove positioned at the film layer and substrate surface, retain the protection in the access opening
Layer；
The substrate surface exposed is pre-processed using acid solution, while removes the protective layer；
Epitaxial layer is formed in the substrate surface using selective epitaxial growth.
2. selective epitaxial growth preprocess method as claimed in claim 1, it is characterised in that the protective layer uses atom
Sedimentation is formed.
3. selective epitaxial growth preprocess method as claimed in claim 1, it is characterised in that the thickness of the protective layer is
30 angstroms~50 angstroms.
4. selective epitaxial growth preprocess method as claimed in claim 1, it is characterised in that using hydrofluoric acid to the lining
Basal surface is pre-processed, and removes the protective layer.
5. selective epitaxial growth preprocess method as claimed in claim 1, it is characterised in that the substrate is silicon.
6. selective epitaxial growth preprocess method as claimed in claim 5, it is characterised in that described to be etched back to removal 300
Angstrom~500 angstroms of silicon.
7. selective epitaxial growth preprocess method as claimed in claim 1, it is characterised in that the film layer is silica
Arranged with the stacked spaced apart of silicon nitride film.
8. selective epitaxial growth preprocess method as claimed in claim 1, it is characterised in that the epitaxial layer is silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510187339.1A CN104779142B (en) | 2015-04-20 | 2015-04-20 | Selective epitaxial growth preprocess method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510187339.1A CN104779142B (en) | 2015-04-20 | 2015-04-20 | Selective epitaxial growth preprocess method |
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| CN104779142A CN104779142A (en) | 2015-07-15 |
| CN104779142B true CN104779142B (en) | 2018-03-30 |
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| CN111073649A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method |
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| KR100510997B1 (en) * | 2000-06-29 | 2005-08-31 | 주식회사 하이닉스반도체 | Method For Forming The Junction Electrode Of Semiconductor Device |
| JP5275585B2 (en) * | 2007-06-18 | 2013-08-28 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Epitaxial silicon wafer manufacturing method |
| US9252014B2 (en) * | 2013-09-04 | 2016-02-02 | Globalfoundries Inc. | Trench sidewall protection for selective epitaxial semiconductor material formation |
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Effective date of registration: 20240401 Address after: No. 88, Weilai Third Road, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430000 Patentee after: YANGTZE MEMORY TECHNOLOGIES Co.,Ltd. Country or region after: China Address before: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Country or region before: China |