CN104779142A - Selective epitaxial growth pretreatment method - Google Patents
Selective epitaxial growth pretreatment method Download PDFInfo
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- CN104779142A CN104779142A CN201510187339.1A CN201510187339A CN104779142A CN 104779142 A CN104779142 A CN 104779142A CN 201510187339 A CN201510187339 A CN 201510187339A CN 104779142 A CN104779142 A CN 104779142A
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- epitaxial growth
- selective epitaxial
- protective layer
- preprocess method
- substrate
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- 238000002203 pretreatment Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000011241 protective layer Substances 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000428 dust Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 239000000243 solution Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
The invention provides a selective epitaxial growth pretreatment method. According to the selective epitaxial growth pretreatment method, a protective layer is formed in a channel hole, and then, when an exposed substrate is pre-treated, the protective layer can protect the surface of the channel hole from unevenness, so that the performance of the channel hole after the pretreatment can be ensured, and the problems existing in the prior art are solved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of selective epitaxial growth preprocess method.
Background technology
Before selective epitaxial deposition, need very clean silicon face, the quality that selective epitaxial deposits can be ensured like this.The original oxide layer of silicon face and other impurity can hinder the growth of selective epitaxial or cause the interface of growth bad, thus affect the conduction of electric current.
In the prior art, usually have two kinds of traditional methods to carry out preliminary treatment to silicon face, to make the condition of silicon face coincidence selectivity epitaxial growth technology, concrete pretreatment mode is as follows:
1) with SiCoNi, preliminary treatment is carried out to silicon face.But SiCoNi can make access opening become large on the one hand, so need to do less when exposing by access opening critical size, this is a challenge to the condition of exposure; In addition on the one hand, after SiCoNi cleaning, wafer rear has metal ion to stain, thus the boiler tube board of meeting contaminate subsequent.
2) with the hydrofluoric acid of dilution, preliminary treatment is carried out to silicon face.But hydrofluoric acid is higher than the etch-rate of silicon nitride to the etch-rate of the silica in access opening, thus cause access opening surface irregularity, adverse effect is caused to the deposition of Electronic saving layer in further channel hole and unformed silicon passage, even causes the fracture of passage.
Concrete, please refer to Fig. 1 and Fig. 2, Fig. 1 and Fig. 2 adopts hydrofluoric acid to carry out pretreated structural representation to silicon face in prior art, wherein, there is provided silicon substrate 10, silicon substrate 10 is formed with thin layer, described thin layer comprises spaced multiple oxide layer 21 and nitration case 22, access opening 11 is formed in described thin layer, and exposes silicon substrate 10 (as shown in Figure 1); Then hydrofluoric acid is adopted to carry out preliminary treatment to the silicon substrate 10 exposed, but, as mentioned previously, when using hydrofluoric acid to clean silicon substrate 10, oxide layer 21 in access opening 11 etches too fast, cause access opening 11 surface irregularity (as shown in Figure 2), adverse effect is caused to subsequent technique.
Summary of the invention
The object of the present invention is to provide a kind of selective epitaxial growth preprocess method, preliminary treatment can be carried out to silicon face, and ensure the performance of access opening.
To achieve these goals, the present invention proposes a kind of selective epitaxial growth preprocess method, comprise step:
There is provided substrate, described substrate is formed with multi-layer thin rete, be formed with access opening in described thin layer, described access opening exposes described substrate;
Layer protective layer is formed on the surface of described thin layer, substrate and access opening;
Adopt back etching to remove the protective layer being positioned at described thin layer and substrate surface, retain the protective layer being positioned at described access opening;
Adopt acid solution to carry out preliminary treatment to the substrate surface exposed, remove described protective layer simultaneously;
Selective epitaxial growth is adopted to form epitaxial loayer at described substrate surface.
Further, in described selective epitaxial growth preprocess method, described protective layer adopts atom deposition method to be formed.
Further, in described selective epitaxial growth preprocess method, described protective layer material is silica.
Further, in described selective epitaxial growth preprocess method, the thickness of described protective layer is 30 dust ~ 50 dusts.
Further, in described selective epitaxial growth preprocess method, adopt hydrofluoric acid to carry out preliminary treatment to described substrate surface, and remove described protective layer.
Further, in described selective epitaxial growth preprocess method, described substrate is silicon.
Further, in described selective epitaxial growth preprocess method, the silicon of described time etching removal 300 dust ~ 500 dust.
Further, in described selective epitaxial growth preprocess method, described thin layer is the stacked spaced apart arrangement of silica and silicon nitride film.
Further, in described selective epitaxial growth preprocess method, described epitaxial loayer is silicon.
Compared with prior art; beneficial effect of the present invention is mainly reflected in: in access opening, form protective layer; when afterwards preliminary treatment being carried out to the substrate exposed; protective layer can the surface in protection channel hole; avoid the formation of uneven; thus the performance of access opening after preliminary treatment can be ensured, avoid problems of the prior art.
Accompanying drawing explanation
Fig. 1 and Fig. 2 adopts hydrofluoric acid to carry out pretreated structural representation to silicon face in prior art;
Fig. 3 is the flow chart of selective epitaxial growth preprocess method in one embodiment of the invention;
Fig. 4 to Fig. 8 is the generalized section in one embodiment of the invention in selective epitaxial growth preprocess method process.
Embodiment
Below in conjunction with schematic diagram, selective epitaxial growth preprocess method of the present invention is described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 3, in the present embodiment, propose a kind of selective epitaxial growth preprocess method, comprise step:
S100: provide substrate, described substrate is formed with multi-layer thin rete, is formed with access opening in described thin layer, and described access opening exposes described substrate;
S200: form layer protective layer on the surface of described thin layer, substrate and access opening;
S300: adopt back etching to remove the protective layer being positioned at described thin layer and substrate surface, retain the protective layer being positioned at described access opening;
S400: adopt acid solution to carry out preliminary treatment to the substrate surface exposed, remove described protective layer simultaneously;
S500: adopt selective epitaxial growth to form epitaxial loayer at described substrate surface.
Concrete, please refer to Fig. 4, in the present embodiment, provide substrate 100, described substrate 100 is silicon; Described thin layer is the stacked spaced apart arrangement of silica 210 and silicon nitride 220 film, and described access opening 110 is formed in described thin layer, and exposes the surface of described substrate 100.
Please refer to Fig. 5; layer protective layer 400 is formed on the surface of described thin layer, substrate 100 and access opening 110; described protective layer 400 adopts atom deposition method (ALD) to be formed; the material that described protective layer 400 is adopted can be silica; the thickness of described protective layer 400 is 30 dust ~ 50 dusts, such as, be 40 dusts.
Please refer to Fig. 6, adopt back etching to remove the protective layer 400 being positioned at described thin layer and substrate 100 surface, retain the protective layer 400 being positioned at described access opening 110; Now, described time etching is not only removed partial protection layer 400 and can also be etched substrate 100, thus removes the silicon of 300 dust ~ 500 dusts, such as, be 400 dusts, is conducive to so follow-uply carrying out preliminary treatment to substrate 100.
Please refer to Fig. 7, adopt acid solution to carry out preliminary treatment to substrate 100 surface exposed, form pretreated groove 310, the silicon face in described groove 310 is comparatively clean, is convenient to follow-up formation epitaxial loayer, and acid solution also can remove described protective layer 400 simultaneously; Concrete; in the present embodiment; hydrofluoric acid (HF) is adopted to carry out preliminary treatment to described substrate 100 surface; and remove described protective layer 400; in this step; hydrofluoric acid carries out the pretreated time can for remove described protective layer 400 just completely; when the sidewall of access opening 110 not being caused damage; damage is not caused to the oxide layer in access opening 110 herein; therefore, it is possible to ensure its off guard be etched into concavo-convex; thus ensure the performance of access opening 110, be conducive to follow-up technique and carry out.
Please refer to Fig. 8, adopt selective epitaxial growth to form epitaxial loayer 110 on described substrate 100 surface, wherein, the material of described epitaxial loayer 110 is also silicon.In groove 310, comparatively clean silicon face has been defined due to above-mentioned, therefore, comparatively good contact can be formed during follow-up employing selective epitaxial growth silicon, avoid the original oxide layer of silicon face and other impurity can hinder the growth of selective epitaxial or cause the interface of growth bad, thus affecting the conduction of electric current.
To sum up; in the selective epitaxial growth preprocess method that the embodiment of the present invention provides; protective layer is formed in access opening; when afterwards preliminary treatment being carried out to the substrate exposed; protective layer can the surface in protection channel hole; avoid the formation of uneven, thus the performance of access opening after preliminary treatment can be ensured, avoid problems of the prior art.
Above are only the preferred embodiments of the present invention, any restriction is not played to the present invention.Any person of ordinary skill in the field; in the scope not departing from technical scheme of the present invention; the technical scheme disclose the present invention and technology contents make the variations such as any type of equivalent replacement or amendment; all belong to the content not departing from technical scheme of the present invention, still belong within protection scope of the present invention.
Claims (9)
1. a selective epitaxial growth preprocess method, is characterized in that, comprises step:
There is provided substrate, described substrate is formed with multi-layer thin rete, be formed with access opening in described thin layer, described access opening exposes described substrate;
Layer protective layer is formed on the surface of described thin layer, substrate and access opening;
Adopt back etching to remove the protective layer being positioned at described thin layer and substrate surface, retain the protective layer being positioned at described access opening;
Adopt acid solution to carry out preliminary treatment to the substrate surface exposed, remove described protective layer simultaneously;
Selective epitaxial growth is adopted to form epitaxial loayer at described substrate surface.
2. selective epitaxial growth preprocess method as claimed in claim 1, is characterized in that, described protective layer adopts atom deposition method to be formed.
3. selective epitaxial growth preprocess method as claimed in claim 2, it is characterized in that, described protective layer material is silica.
4. selective epitaxial growth preprocess method as claimed in claim 3, it is characterized in that, the thickness of described protective layer is 30 dust ~ 50 dusts.
5. selective epitaxial growth preprocess method as claimed in claim 3, is characterized in that, adopts hydrofluoric acid to carry out preliminary treatment to described substrate surface, and removes described protective layer.
6. selective epitaxial growth preprocess method as claimed in claim 1, it is characterized in that, described substrate is silicon.
7. selective epitaxial growth preprocess method as claimed in claim 6, is characterized in that, the silicon of described time etching removal 300 dust ~ 500 dust.
8. selective epitaxial growth preprocess method as claimed in claim 1, is characterized in that, described thin layer is the stacked spaced apart arrangement of silica and silicon nitride film.
9. selective epitaxial growth preprocess method as claimed in claim 1, it is characterized in that, described epitaxial loayer is silicon.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510187339.1A CN104779142B (en) | 2015-04-20 | 2015-04-20 | Selective epitaxial growth preprocess method |
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| CN201510187339.1A CN104779142B (en) | 2015-04-20 | 2015-04-20 | Selective epitaxial growth preprocess method |
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| CN104779142A true CN104779142A (en) | 2015-07-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111073649A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020034856A1 (en) * | 2000-06-29 | 2002-03-21 | Jeon Kwang-Seok | Method for forming junction electrode of semiconductor device |
| US20080308129A1 (en) * | 2007-06-18 | 2008-12-18 | Epas | Manufacturing method of epitaxial silicon wafer and substrate cleaning apparatus |
| WO2015032279A1 (en) * | 2013-09-04 | 2015-03-12 | International Business Machines Corporation | Trench sidewall protection for selective epitaxial semiconductor material formation |
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2015
- 2015-04-20 CN CN201510187339.1A patent/CN104779142B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020034856A1 (en) * | 2000-06-29 | 2002-03-21 | Jeon Kwang-Seok | Method for forming junction electrode of semiconductor device |
| US20080308129A1 (en) * | 2007-06-18 | 2008-12-18 | Epas | Manufacturing method of epitaxial silicon wafer and substrate cleaning apparatus |
| JP2008311568A (en) * | 2007-06-18 | 2008-12-25 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Manufacturing method for epitaxial silicon wafer and substrate cleaning device |
| WO2015032279A1 (en) * | 2013-09-04 | 2015-03-12 | International Business Machines Corporation | Trench sidewall protection for selective epitaxial semiconductor material formation |
Non-Patent Citations (1)
| Title |
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| 张汝京等: "《纳米集成电路制造工艺》", 31 July 2014, 清华大学出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111073649A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method |
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Effective date of registration: 20240401 Address after: No. 88, Weilai Third Road, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430000 Patentee after: YANGTZE MEMORY TECHNOLOGIES Co.,Ltd. Country or region after: China Address before: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Country or region before: China |
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