CN104752570B - 一种led芯片正切方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000003698 laser cutting Methods 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 8
- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- 239000000428 dust Substances 0.000 claims abstract description 4
- 239000004744 fabric Substances 0.000 claims abstract description 4
- 238000005520 cutting process Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000013467 fragmentation Methods 0.000 description 4
- 238000006062 fragmentation reaction Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract
本发明提供一种LED芯片正切方法,包括准备芯片,在白膜上画上与芯片大小一致的区域作为放片区,将白膜有粘性面朝下贴在紫外激光切割机的吸附平台上,用无尘布反复擦拭至白膜与平台之间无气泡,该方法还包括刺穿白膜放片区域内所有真空吸附孔,再用高精度油石将白膜表面打磨平整,将芯片正面朝上放在放片区域内,在芯片正面涂一层保护液,用激光在芯片正面划出深10‑40μm、宽11±2μm的划痕,完成正切。
Description
技术领域
本发明属于LED芯片制备领域,尤其涉及一种LED芯片正切方法。
背景技术
在LED(发光二极管)芯片制备工艺中,切割就是将制好的整个芯片分割成符合所需尺寸的单一晶粒,这是半导体发光二极管芯片制造工艺中一道必不可少的工序。对于LED芯片,切割工艺目前有两种:锯片切割和激光切割。锯片切割是用高速旋转的锯片刀按设定好的程式将芯片完全锯开成单一晶粒。锯片切割技术已经相当成熟,至今仍为砷化镓、硅、磷化镓基等芯片切割的主流技术。但此方式存在一个问题:有些半导体材料很脆,而且芯片正背面都会蒸镀比较厚的金属材料,这就使得其加工时容易破碎,锯片切割后,芯片周围边缘会产生崩边(正面或背面)、蹦角、毛刺等,严重影响芯片质量,降低良率。
目前在LED芯片制备领域一般采用激光切割。激光切割是随着激光技术的发展而出现的一种新型的切割技术,它是用一定能量密度和波长的激光束聚焦在芯片表面或内部,通过激光在芯片表面或内部灼烧出划痕,然后再用裂片机沿划痕裂开。激光切割具有产能高、成品率高、易于自动化操作、成本低等优势。激光切割有两种方式:正切和背切,为解决激光背切的亮度降低问题,热酸腐蚀工艺采用正面切割的方式。正切时需要把芯片固定在粘有白膜的铁环上进行划片,即正切时需要在贴膜机上进行上膜工艺,上膜工艺会带来以下技术问题:首先,上膜前需要在芯片正面涂覆一层保护液,上膜时芯片正面与上膜机平台的摩擦导致保护液涂布不均匀从而造成芯片部分区域激光切割灼伤,影响芯片亮度;另外,芯片表面的凸起或者上膜机平台清洁不干净容易出现上膜破片,影响生产良率;此外,白膜厚度不均匀会出现激光切割焦点偏差,影响激光切割深度,带来裂片外观不良的问题。
发明内容
本发明所要解决的技术问题是提供一种LED切割方法,解决激光正切时的激光切割灼伤、贴膜破片及激光焦点偏差问题。
为了解决本发明的技术问题,本发明提供一种LED芯片正切方法,包括准备芯片,在白膜上画上与芯片大小一致的区域作为放片区,将白膜有粘性面朝下贴在紫外激光切割机的吸附平台上,用无尘布反复擦拭至白膜与平台之间无气泡,该方法还包括刺穿白膜放片区域内所有真空吸附孔,再用高精度油石将白膜表面打磨平整,将芯片正面朝上放在放片区域内,在芯片正面涂一层保护液,用激光在芯片正面划出深10-40μm、宽11±2μm的划痕,完成正切。
本发明的有益效果:
本发明提供一种LED芯片正切方法,把芯片直接放在载台上进行正面切割,正切前不需要贴白膜,从而避免了由于保护液分布不均匀造成的激光切割灼伤、贴膜破片及白膜厚度不均匀造成的激光焦点偏差问题,简化生产工艺,降低生产成本。
附图说明
图1为本发明正切方法的步骤;
图2为芯片经过激光划片正切后的芯片俯视图。图中横、竖直线为激光划痕。
具体实施方式
提供一种LED芯片正切方法,如图1所示,步骤如下:
(1)准备芯片:在蓝宝石衬底上生长GaN半导体层,在芯片正面刻上对应品种图形并沉积SiO2保护层后准备正面切割;
(2)准备白膜:用裁膜刀裁好一张白膜,在白膜上用有色笔画上与芯片大小一致的区域作为放片区;
(3)白膜贴覆载台:将白膜有粘性面朝下贴在平台上,用无尘布反复擦拭至白膜与平台之间无气泡,用针刺穿白膜放片区域内所有真空吸附孔,再用高精度油石将白膜表面打磨平整;
(4)放片切割;将芯片正面朝上放在放片区域内,在芯片正面涂一层保护液,用激光在芯片正面划出深10-40μm、宽11±2μm的划痕,完成正切。
用本发明的LED芯片正切方法,芯片正面切割前不贴白膜,避免了由于保护液涂布不均匀造成的激光切割灼伤问题、贴膜破片及白膜厚度不均匀造成的激光焦点偏差问题,简化生产工艺,降低生产成本。
以上所述,仅为本发明中的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉该技术的人在本发明所揭露的技术范围内,可轻易想到的变换或替换都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应该以权利要求书的保护范围为准。
Claims (1)
1.一种LED芯片正切方法,其特征在于包括如下步骤:
准备芯片;
在白膜中心位置画上与芯片大小一致的区域作为放片区;
将白膜有粘性面朝下贴在紫外激光切割机的吸附平台上,用无尘布反复擦拭至白膜与平台之间无气泡;
刺穿白膜放片区域内所有真空吸附孔,再用高精度油石将白膜表面打磨平整;
将芯片正面朝上放在放片区域内;
在芯片正面涂一层保护液;
用激光在芯片正面划出深10-40μm、宽11±2μm的划痕,完成正切。
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH11251266A (ja) * | 1998-02-27 | 1999-09-17 | Victor Co Of Japan Ltd | 粘着シ−ト |
CN101123216A (zh) * | 2006-08-10 | 2008-02-13 | 探微科技股份有限公司 | 维持管芯间距的晶片的切割方法 |
CN102664220A (zh) * | 2012-05-15 | 2012-09-12 | 湘能华磊光电股份有限公司 | Led晶片的切割方法和该方法所用保护片 |
CN103367250A (zh) * | 2012-03-29 | 2013-10-23 | 株式会社迪思科 | 器件晶片的分割方法 |
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US8455332B2 (en) * | 2009-05-01 | 2013-06-04 | Bridgelux, Inc. | Method and apparatus for manufacturing LED devices using laser scribing |
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JPH11251266A (ja) * | 1998-02-27 | 1999-09-17 | Victor Co Of Japan Ltd | 粘着シ−ト |
CN101123216A (zh) * | 2006-08-10 | 2008-02-13 | 探微科技股份有限公司 | 维持管芯间距的晶片的切割方法 |
CN103367250A (zh) * | 2012-03-29 | 2013-10-23 | 株式会社迪思科 | 器件晶片的分割方法 |
CN102664220A (zh) * | 2012-05-15 | 2012-09-12 | 湘能华磊光电股份有限公司 | Led晶片的切割方法和该方法所用保护片 |
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