CN104752521A - Schottky barrier diode and process method - Google Patents
Schottky barrier diode and process method Download PDFInfo
- Publication number
- CN104752521A CN104752521A CN201310729326.3A CN201310729326A CN104752521A CN 104752521 A CN104752521 A CN 104752521A CN 201310729326 A CN201310729326 A CN 201310729326A CN 104752521 A CN104752521 A CN 104752521A
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- Prior art keywords
- metal
- groove
- trench
- oxide
- channel bottom
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- 238000000034 method Methods 0.000 title claims description 15
- 230000008569 process Effects 0.000 title claims description 11
- 230000004888 barrier function Effects 0.000 title abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000000903 blocking effect Effects 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000227 grinding Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 4
- 238000000407 epitaxy Methods 0.000 abstract description 3
- 238000002955 isolation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004347 surface barrier Methods 0.000 description 1
- -1 titanium nitrides Chemical class 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
Abstract
The invention discloses a trench shielding Schottky barrier diode. A substrate of the diode is provided with an epitaxy. In the epitaxy, an isolation protection ring surrounds an active region which is internally provided with a plurality of trench shielding electrodes. According to the invention, a P-well is added to the bottom of each trench, an insulating medium layer is arranged between metal filling the trenches and the inner walls of the trenches, the bottom of each trench is not provided with an insulating medium layer, the metal in the trenches is in contact and communicated with the P-wells, and through reverse pressurization, PN junction reverse bias is formed between the P-wells and an N-type epitaxial layer, and the trench structure forms a transverse electric field. Thus, the anti-breakdown capability of the device is enhanced.
Description
Technical field
The present invention relates to semiconductor applications, refer to a kind of Schottky diode especially, the invention still further relates to the process of described Schottky diode.
Background technology
Schottky diode (SchottkyBarrierDiode is abbreviated as SBD), do not utilize P type semiconductor to contact with N type semiconductor to form PN junction principle and make, but the metal-semiconductor junction principle utilizing metal and semiconductor contact to be formed makes.Therefore, SBD is also referred to as metal-semiconductor (contact) diode or surface barrier diode, and it is a kind of hot carrier diode.Metal is as positive pole, semiconductor end is as the diode of negative pole, typical Schottky diode take N type semiconductor as substrate, above, formation arsenic makes the N-epitaxial loayer of dopant, anode uses the material such as molybdenum or aluminium to make barrier, eliminate the electric field of fringe region with silicon dioxide, improve the withstand voltage of pipe.As shown in Figure 1, wherein 1 is substrate to its structure, and 2 is extensions, has multiple groove-shaped bucking electrode 7(insulation blocking ring structure being filled with metal not shown in the figures in extension 2), groove top is deposited with metal and is communicated with the metal in groove.This diode is formed transverse electric field by slot type structure and protects schottky junction oppositely adding pressure, thus improves the puncture voltage of schottky junction, and have the advantages such as switching frequency is high, forward voltage drop is low, shortcoming is that its puncture voltage is lower.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of Schottky diode, and it has higher puncture voltage.
Another technical problem to be solved by this invention is to provide the process of described Schottky diode.
For solving the problem, a kind of Schottky diode of the present invention, substrate has extension, outer Yanzhong has insulation blocking ring, described insulation blocking ring, around being surrounded by source region, has multiple trench mask electrode, it is characterized in that in active area: described trench mask electrode, its trench fill has metal, and trenched side-wall have insulating medium layer by fill metal and extension isolate; Described channel bottom does not have insulating medium layer, and beneath trenches has P trap, and the metal in groove directly contacts connection with the P trap of below.
Further, the metal of filling in described groove is titanium/titanium nitride and tungsten.
The process of Schottky diode of the present invention, comprises following processing step:
1st step, the outer Yanzhong on substrate, carries out the injection of insulation blocking ring;
2nd step, whole device surface carries out an oxide growth;
3rd step, carries out active area injection;
4th step, active area etching groove;
5th step, groove internal oxidition film grows, and the oxide-film etching away channel bottom is to expose the silicon of bottom;
6th step, channel bottom P trap injects;
7th step, metal filled in groove;
8th step, inter-level dielectric deposit also etches;
9th step, groove top Metal deposition.
Further, in described 5th step, oxide-film is only formed at trench wall, and channel bottom does not have oxide-film.
Further, in described 7th step, the metal of filling in groove comprises titanium/titanium nitride and tungsten.
Further, in described 9th step, the metal of groove deposited on top comprises titanium/titanium nitride.
Schottky diode of the present invention and process; P trap is formed by increasing in the bottom of groove-shaped bucking electrode to inject; when oppositely pressurizeing; reverse PN junction is formed between the P trap of channel bottom and N-type epitaxy layer; groove structure forms transverse electric field; two schottky junction protection superpositions are implemented, and make device have higher puncture voltage.
Accompanying drawing explanation
Fig. 1 is the structural representation of conventional schottky.
Fig. 2 ~ 10 are present invention process step schematic diagrames.
Figure 11 is present invention process flow chart of steps.
Description of reference numerals
1 is N-type substrate, and 2 is N-type extensions, and 3 is P traps, and 4 is top layer metallic layers, and 5 is an oxygen, and 6 is insulation blocking rings, and 7 is groove-shaped bucking electrodes, and 8 is trenched side-wall oxide layers, and 9 is titanium/titanium nitrides, and 10 is tungsten, and 11 is inter-level dielectrics.
Embodiment
Schottky diode of the present invention, as shown in Figure 10, N-type substrate 1 has N-type extension 2, have insulation blocking ring 6 in extension 2, described insulation blocking ring 6 is around being surrounded by source region, has multiple trench mask electrode 7 in active area, described trench mask electrode 7, its trench fill has metal, is generally titanium/titanium nitride and tungsten, and trenched side-wall has insulating medium layer 8 metal of filling and extension 2 is isolated; Described channel bottom does not have insulating medium layer 8, and beneath trenches has P trap 3, and the metal in groove directly contacts connection with the P trap 3 of below.
The process of Schottky diode of the present invention, comprises following processing step:
1st step, as shown in Figure 2, in the extension 2 in N-type substrate 1, carries out the injection of insulation blocking ring 6.
2nd step, as shown in Figure 3, whole device surface carries out an oxygen 5 and grows.
3rd step, as shown in Figure 4, carries out active area injection.
4th step, as shown in Figure 5, active area etching groove.
5th step, as shown in Figure 6, groove internal oxidition film grows.Oxide-film 8 is formed at trench wall, and the oxide-film 6 of channel bottom etches away the silicon exposing channel bottom completely by etching technics, and channel bottom does not have oxide-film 6 to cover.
6th step, as shown in Figure 7, channel bottom P trap 3 injects.P trap is formed at beneath trenches.
7th step, as shown in Figure 8, metal filled in groove.During filling, first deposit one deck titanium/titanium nitride 9, and then fill full tungsten 10.
8th step, deposit one deck inter-level dielectric 11, and etch, as shown in Figure 9.
9th step, as shown in Figure 10, groove top Metal deposition one deck titanium/titanium nitride 9, then deposit layer of metal 4, and etch, form top-level metallic, then carry out as backgrinding process, deposit forms back metal (back metal is not shown), and resulting devices completes.
These are only the preferred embodiments of the present invention, be not intended to limit the present invention.For a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a Schottky diode, substrate has extension, outer Yanzhong has insulation blocking ring, described insulation blocking ring is around being surrounded by source region, there is multiple trench mask electrode in active area, it is characterized in that: described trench mask electrode, its trench fill has metal, and trenched side-wall have insulating medium layer by fill metal and extension isolate; Described channel bottom does not have insulating medium layer, and beneath trenches has P trap, and the metal in groove directly contacts connection with the P trap of below.
2. Schottky diode as claimed in claim 1, is characterized in that: the metal of filling in described groove is titanium/titanium nitride and tungsten.
3. the process of Schottky diode as claimed in claim 1, is characterized in that: comprise following processing step:
1st step, the outer Yanzhong on substrate, carries out the injection of insulation blocking ring;
2nd step, whole device surface carries out an oxide growth;
3rd step, carries out active area injection;
4th step, active area etching groove;
5th step, groove internal oxidition film grows, and the oxide-film etching away channel bottom is to expose the silicon of bottom;
6th step, channel bottom P trap injects;
7th step, metal filled in groove;
8th step, inter-level dielectric deposit also etches;
9th step, groove top Metal deposition, and silicon chip back side grinding, deposit back metal.
4. the process of a kind of radio frequency LDMOS device as claimed in claim 3, is characterized in that: in described 5th step, oxide-film is only formed at trench wall, and channel bottom does not have oxide-film.
5. the manufacture method of a kind of radio frequency LDMOS device as claimed in claim 3, is characterized in that: in described 7th step, and the metal of filling in groove comprises titanium/titanium nitride and tungsten.
6. the manufacture method of a kind of radio frequency LDMOS device as claimed in claim 3, is characterized in that: in described 9th step, the metal of groove deposited on top comprises titanium/titanium nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310729326.3A CN104752521A (en) | 2013-12-26 | 2013-12-26 | Schottky barrier diode and process method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310729326.3A CN104752521A (en) | 2013-12-26 | 2013-12-26 | Schottky barrier diode and process method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104752521A true CN104752521A (en) | 2015-07-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310729326.3A Pending CN104752521A (en) | 2013-12-26 | 2013-12-26 | Schottky barrier diode and process method |
Country Status (1)
| Country | Link |
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| CN (1) | CN104752521A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161417A (en) * | 2015-08-31 | 2015-12-16 | 上海华虹宏力半导体制造有限公司 | Process method for Schottky barrier diode |
| CN106129126A (en) * | 2016-08-31 | 2016-11-16 | 上海格瑞宝电子有限公司 | A kind of trench schottky diode and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020008237A1 (en) * | 2000-07-20 | 2002-01-24 | Advanced Power Devices | Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication |
| US20030052383A1 (en) * | 2001-08-02 | 2003-03-20 | Fuji Electric Co., Ltd. | Power semiconductor rectifier with ring-shaped trenches |
| CN101783345A (en) * | 2010-03-04 | 2010-07-21 | 无锡新洁能功率半导体有限公司 | Grooved semiconductor rectifier and manufacturing method thereof |
| US20110084353A1 (en) * | 2009-10-12 | 2011-04-14 | Pfc Device Corporation | Trench schottky rectifier device and method for manufacturing the same |
-
2013
- 2013-12-26 CN CN201310729326.3A patent/CN104752521A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020008237A1 (en) * | 2000-07-20 | 2002-01-24 | Advanced Power Devices | Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication |
| US20030052383A1 (en) * | 2001-08-02 | 2003-03-20 | Fuji Electric Co., Ltd. | Power semiconductor rectifier with ring-shaped trenches |
| US20110084353A1 (en) * | 2009-10-12 | 2011-04-14 | Pfc Device Corporation | Trench schottky rectifier device and method for manufacturing the same |
| CN101783345A (en) * | 2010-03-04 | 2010-07-21 | 无锡新洁能功率半导体有限公司 | Grooved semiconductor rectifier and manufacturing method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161417A (en) * | 2015-08-31 | 2015-12-16 | 上海华虹宏力半导体制造有限公司 | Process method for Schottky barrier diode |
| CN105161417B (en) * | 2015-08-31 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | Schottky diode process |
| CN106129126A (en) * | 2016-08-31 | 2016-11-16 | 上海格瑞宝电子有限公司 | A kind of trench schottky diode and preparation method thereof |
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Application publication date: 20150701 |
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