CN104733456B - 一种阵列基板及其制备方法、显示装置 - Google Patents
一种阵列基板及其制备方法、显示装置 Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 48
- 239000010408 film Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 36
- 239000004411 aluminium Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
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- 238000009826 distribution Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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Abstract
本发明公开了一种阵列基板及其制备方法、显示装置,所述阵列基板包括衬底基板,所述衬底基板上设置有薄膜晶体管、彩膜层和第一钝化层,所述第一钝化层上设置有第一电极,所述第一电极包括面状子电极,所述面状子电极与所述薄膜晶体管的区域以及像素单元之间的区域对应设置,所述第一电极为不透明金属电极,所述第一电极的表面设置有凹凸结构,所述凹凸结构用于分散外部入射光。本发明提供的第一电极的表面设置有凹凸结构,所述凹凸结构能够分散外部入射光,使得外部射入的光线发生漫反射,从而避免光线过度集中,提高外部能见度和显示画面的辨识度。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种阵列基板及其制备方法、显示装置。
背景技术
液晶显示器件(Liquid Crystal Display,简称LCD)和有机电致发光器件(Organic Electroluminescent Device,简称OLED)等显示器件已成为人们生活中的必需品,随着人们需求的提高,为了提高显示器件的显示品质,避免出现阵列基板和彩膜基板对盒时的偏差影响显示器件开口率或者出现漏光的问题,通过集成技术(Color Filter onArray,简称COA)将彩色滤光片集成在阵列基板上。
现有的阵列基板中,设置在所述阵列基板的最上方的第一电极对外部入射光发生反射,导致外部能见度减弱,从而减少了光利用率,降低了显示画面的辨识度。
发明内容
为解决上述问题,本发明提供一种阵列基板及其制备方法、显示装置,用于解决现有技术中的第一电极对外部入射光发生反射,导致外部能见度减弱,从而减少光利用率,降低显示画面的辨识度的问题。
为此,本发明提供一种阵列基板,包括衬底基板,所述衬底基板上设置有薄膜晶体管、彩膜层和第一钝化层,所述第一钝化层上设置有第一电极,所述第一电极包括面状子电极,所述面状子电极与所述薄膜晶体管的区域以及像素单元之间的区域对应设置,所述第一电极为不透明金属电极,所述第一电极的表面设置有凹凸结构,所述凹凸结构用于分散外部入射光。
可选的,所述彩膜层设置在所述薄膜晶体管上,所述彩膜层上设置有平坦层,所述平坦层上设置有第二电极,所述第二电极为透明电极,所述第一钝化层设置在所述第二电极上。
可选的,所述第一电极还包括多个相互平行分布的条状子电极,所述面状子电极与所述条状子电极同层设置,所述条状子电极与所述第二电极对应设置。
可选的,还包括第一过孔、第二过孔和公共电极线,所述公共电极线与栅极同层设置,所述第一电极通过所述第一过孔与所述公共电极线连接,所述第二电极通过所述第二过孔与所述薄膜晶体管的漏极连接。
可选的,所述第一电极的构成材料包括钼、铝、钕化铝或者铜。
本发明还提供一种显示装置,包括上述任一阵列基板。
本发明还提供一种阵列基板的制备方法,包括:
在衬底基板上形成薄膜晶体管、彩膜层和第一钝化层;
在所述第一钝化层上形成第一电极,所述第一电极包括面状子电极,所述面状子电极与所述薄膜晶体管的区域以及像素单元之间的区域对应设置,所述第一电极为不透明金属电极,所述第一电极的表面设置有凹凸结构,所述凹凸结构用于分散外部入射光。
可选的,所述在所述第一钝化层上形成第一电极的步骤包括:
在所述第一钝化层上形成金属薄膜;
在所述金属薄膜上形成光刻胶;
采用半色调掩模板或灰色调掩模板对所述光刻胶进行曝光、显影,形成光刻胶完全保留区域、光刻胶部分保留区域以及光刻胶完全去除区域,所述光刻胶完全保留区域和所述光刻胶部分保留区域对应于形成第一电极的图形,所述光刻胶完全去除区域对应于形成其它图形;
对所述金属薄膜进行第一次刻蚀,形成第一电极;
对所述光刻胶进行灰化处理,去除所述光刻胶部分保留区域的光刻胶;
对所述第一电极进行第二次刻蚀,形成凹凸结构;
剥离剩余的光刻胶。
可选的,所述第一次刻蚀为湿法刻蚀,所述第二次刻蚀为干法刻蚀。
可选的,所述在衬底基板上形成薄膜晶体管、彩膜层和第一钝化层的步骤包括:
在衬底基板上形成薄膜晶体管;
在所述薄膜晶体管上形成彩膜层;
在所述彩膜层的上方形成第一钝化层;
所述在所述彩膜层的上方形成第一钝化层的步骤之前包括:
在所述彩膜层上形成平坦层;
在所述平坦层上形成第二电极,所述第一钝化层位于所述第二电极上,所述第二电极为透明电极。
本发明具有下述有益效果:
本发明提供的阵列基板及其制备方法、显示装置中,所述阵列基板包括衬底基板,所述衬底基板上设置有薄膜晶体管、彩膜层和第一钝化层,所述第一钝化层上设置有第一电极,所述第一电极包括面状子电极,所述面状子电极与所述薄膜晶体管的区域以及像素单元之间的区域对应设置,所述第一电极为不透明金属电极,所述第一电极的表面设置有凹凸结构,所述凹凸结构用于分散外部入射光。本发明提供的第一电极的表面设置有凹凸结构,所述凹凸结构能够分散外部入射光,使得外部射入的光线发生漫反射,从而避免光线过度集中,提高外部能见度和显示画面的辨识度。
附图说明
图1为本发明实施例一提供的一种阵列基板的截面图;
图2为本发明实施例三提供的一种阵列基板的制备方法的流程图;
图3~图7为制备图1所示的阵列基板的中间结构的截面图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案,下面结合附图对本发明提供的阵列基板及其制备方法、显示装置进行详细描述。
实施例一
图1为本发明实施例一提供的一种阵列基板的截面图。如图1所示,所述阵列基板包括:衬底基板101、栅极102、公共电极线103、栅绝缘层104、有源层105、源极106、漏极107、第二钝化层108、彩膜层109、平坦层201、第二电极202、第一钝化层203、第一电极204。所述栅极102与所述公共电极线103同层设置在所述衬底基板101上,所述栅绝缘层104设置在所述栅极102与所述公共电极线103上,所述有源层105设置在所述栅绝缘层104上,所述源极106与所述漏极107设置在所述有源层105上,所述第二钝化层108设置在所述源极106和所述漏极107上,所述彩膜层109设置在所述第二钝化层108上,所述平坦层201设置在所述第二钝化层108上,所述第二电极202设置在所述平坦层201上,而且所述第二电极202通过第二过孔205与所述漏极107连接,所述第一钝化层203设置在所述第二电极202上,所述第一电极204设置在所述第一钝化层203上,所述第一电极204通过第一过孔206与所述公共电极线103连接。
本实施例中,所述第一电极204为不透明金属电极,所述第一电极的表面设置有凹凸结构,所述凹凸结构用于分散外部入射光,使得外部射入的光线发生漫反射,从而避免光线过度集中,提高外部能见度和显示画面的辨识度。另外,所述第一电极204包括面状子电极和多个相互平行分布的条状子电极,所述面状子电极与所述条状子电极同层设置。所述面状子电极与所述薄膜晶体管的区域以及像素单元之间的区域对应设置,也就是说,所述面状子电极设置在现有技术中黑矩阵的位置,实现了黑矩阵的功能,从而减少了黑矩阵的使用。所述条状子电极与所述第二电极对应设置,也就是说,所述条状子电极设置在现有技术中公共电极的位置,实现了公共电极的功能。
本实施例中,所述衬底基板101可以是玻璃基板或石英基板。所述栅极102、源极106和漏极107可以是采用金属材料形成的。所述栅绝缘层104可以是采用氮化硅,也可以是使用氧化硅和氮氧化硅形成的。所述有源层105可以是采用金属氧化物半导体材料形成的。所述第二层钝化层108和所述第一钝化层203可以是采用氮化硅,也可以是有机树脂材料形成的。所述平坦层201可以是采用树脂材料形成的。所述第二电极202可以是采用氧化铟锡(Indium tin oxide,简称ITO)或者掺铟氧化锌(indium-doped zinc oxide,简称IZO)形成的。所述第一电极204可以是采用钼、铝、钕化铝或者铜等金属材料形成的。
本实施例提供的阵列基板中,所述阵列基板包括衬底基板,所述衬底基板上设置有薄膜晶体管、彩膜层和第一钝化层,所述第一钝化层上设置有第一电极,所述第一电极包括面状子电极,所述面状子电极与所述薄膜晶体管的区域以及像素单元之间的区域对应设置,所述第一电极为不透明金属电极,所述第一电极的表面设置有凹凸结构,所述凹凸结构用于分散外部入射光。本实施例提供的第一电极的表面设置有凹凸结构,所述凹凸结构能够分散外部入射光,使得外部射入的光线发生漫反射,从而避免光线过度集中,提高外部能见度和显示画面的辨识度。
实施例二
本实施例提供一种显示装置,包括实施例一提供的阵列基板,详情请参见上述实施例一关于所述阵列基板的具体描述,此处不再赘述。
本实施例提供的显示装置中,所述阵列基板包括衬底基板,所述衬底基板上设置有薄膜晶体管、彩膜层和第一钝化层,所述第一钝化层上设置有第一电极,所述第一电极包括面状子电极,所述面状子电极与所述薄膜晶体管的区域以及像素单元之间的区域对应设置,所述第一电极为不透明金属电极,所述第一电极的表面设置有凹凸结构,所述凹凸结构用于分散外部入射光。本实施例提供的第一电极的表面设置有凹凸结构,所述凹凸结构能够分散外部入射光,使得外部射入的光线发生漫反射,从而避免光线过度集中,提高外部能见度和显示画面的辨识度。
实施例三
图2为本发明实施例三提供的一种阵列基板的制备方法的流程图。如图2所示,所述制备方法包括:
步骤2001、在衬底基板上形成薄膜晶体管、彩膜层和第一钝化层。
图3~图7为制备图1所示的阵列基板的中间结构的截面图。如3所示,在所述衬底基板101上依次形成有栅极102、公共电极线103、栅绝缘层104、有源层105、源极106、漏极107、第二钝化层108、彩膜层109、平坦层201、第二电极202、第一钝化层203,在所述第二钝化层108上形成第二过孔,所述第二电极202通过第二过孔205与所述漏极107连接。
本实施例中,所述衬底基板101可以是玻璃基板或石英基板。所述栅极102、源极106和漏极107可以是采用金属材料形成的。所述栅绝缘层104可以是采用氮化硅,也可以是使用氧化硅和氮氧化硅形成的。所述有源层105可以是采用金属氧化物半导体材料形成的。所述第二层钝化层108和所述第一钝化层203可以是采用氮化硅,也可以是有机树脂材料形成的。所述平坦层201可以是采用树脂材料形成的。所述第二电极202可以是采用氧化铟锡(Indium tin oxide,简称ITO)或者掺铟氧化锌(indium-doped zinc oxide,简称IZO)形成的。
步骤2002、在所述第一钝化层上形成第一电极,所述第一电极包括面状子电极,所述面状子电极与所述薄膜晶体管的区域以及像素单元之间的区域对应设置,所述第一电极为不透明金属电极,所述第一电极的表面设置有凹凸结构,所述凹凸结构用于分散外部入射光。
如图4所示,在所述第一钝化层203上形成金属薄膜207。所述金属薄膜207的厚度范围为100nm至300nm。如图5所示,在所述金属薄膜207上形成光刻胶208,采用半色调掩模板或灰色调掩模板对所述光刻胶208进行曝光、显影,形成光刻胶完全保留区域、光刻胶部分保留区域以及光刻胶完全去除区域,所述光刻胶完全保留区域和所述光刻胶部分保留区域对应于形成第一电极的图形,所述光刻胶完全去除区域对应于形成其它图形。
如图6所示,对所述金属薄膜207进行湿法刻蚀,形成第一电极204。如图7所示,对所述光刻胶208进行灰化处理,去除所述光刻胶部分保留区域的光刻胶。参见图1,对所述第一电极204进行干法刻蚀,形成凹凸结构。所述干法刻蚀的深度范围为所述金属薄膜207厚度的30%至70%,而且其它区域的厚度不小于50nm。最后,剥离剩余的光刻胶208。所述第一电极204为不透明金属电极,所述第一电极204的表面设置有凹凸结构,所述凹凸结构用于分散外部入射光,使得外部射入的光线发生漫反射,从而避免光线过度集中,提高外部能见度和显示画面的辨识度。可选的,所述第一电极204可以是采用钼、铝、钕化铝或者铜等金属材料形成的。
本实施例中,所述第一电极204包括面状子电极和多个相互平行分布的条状子电极,所述面状子电极与所述条状子电极同层设置,所述面状子电极与所述薄膜晶体管的区域以及像素单元之间的区域对应设置,也就是说,所述面状子电极设置在现有技术中黑矩阵的位置,实现了黑矩阵的功能,从而减少了黑矩阵的使用。所述条状子电极与所述第二电极对应设置,也就是说,所述条状子电极设置在现有技术中公共电极的位置,实现了公共电极的功能。
本实施例提供的阵列基板的制备方法中,所述阵列基板包括衬底基板,所述衬底基板上设置有薄膜晶体管、彩膜层和第一钝化层,所述第一钝化层上设置有第一电极,所述第一电极包括面状子电极,所述面状子电极与所述薄膜晶体管的区域以及像素单元之间的区域对应设置,所述第一电极为不透明金属电极,所述第一电极的表面设置有凹凸结构,所述凹凸结构用于分散外部入射光。本实施例提供的第一电极的表面设置有凹凸结构,所述凹凸结构能够分散外部入射光,使得外部射入的光线发生漫反射,从而避免光线过度集中,提高外部能见度和显示画面的辨识度。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。
Claims (9)
1.一种阵列基板,其特征在于,包括衬底基板,所述衬底基板上设置有薄膜晶体管、彩膜层和第一钝化层,所述第一钝化层上设置有第一电极,所述第一电极包括面状子电极,所述面状子电极与所述薄膜晶体管的区域以及像素单元之间的区域对应设置,所述第一电极为不透明金属电极,所述第一电极的表面设置有凹凸结构,所述凹凸结构用于分散外部入射光,所述第一电极的构成材料包括钼、铝、钕化铝或者铜。
2.根据权利要求1所述的阵列基板,其特征在于,所述彩膜层设置在所述薄膜晶体管上,所述彩膜层上设置有平坦层,所述平坦层上设置有第二电极,所述第二电极为透明电极,所述第一钝化层设置在所述第二电极上。
3.根据权利要求2所述的阵列基板,其特征在于,所述第一电极还包括多个相互平行分布的条状子电极,所述面状子电极与所述条状子电极同层设置,所述条状子电极与所述第二电极对应设置。
4.根据权利要求2所述的阵列基板,其特征在于,还包括第一过孔、第二过孔和公共电极线,所述公共电极线与栅极同层设置,所述第一电极通过所述第一过孔与所述公共电极线连接,所述第二电极通过所述第二过孔与所述薄膜晶体管的漏极连接。
5.一种显示装置,其特征在于,包括权利要求1-4任一所述的阵列基板。
6.一种阵列基板的制备方法,其特征在于,包括:
在衬底基板上形成薄膜晶体管、彩膜层和第一钝化层;
在所述第一钝化层上形成第一电极,所述第一电极包括面状子电极,所述面状子电极与所述薄膜晶体管的区域以及像素单元之间的区域对应设置,所述第一电极为不透明金属电极,所述第一电极的表面设置有凹凸结构,所述凹凸结构用于分散外部入射光,所述第一电极的构成材料包括钼、铝、钕化铝或者铜。
7.根据权利要求6所述的阵列基板的制备方法,其特征在于,所述在所述第一钝化层上形成第一电极的步骤包括:
在所述第一钝化层上形成金属薄膜;
在所述金属薄膜上形成光刻胶;
采用半色调掩模板或灰色调掩模板对所述光刻胶进行曝光、显影,形成光刻胶完全保留区域、光刻胶部分保留区域以及光刻胶完全去除区域,所述光刻胶完全保留区域和所述光刻胶部分保留区域对应于形成第一电极的图形,所述光刻胶完全去除区域对应于形成其它图形;
对所述金属薄膜进行第一次刻蚀,形成第一电极;
对所述光刻胶进行灰化处理,去除所述光刻胶部分保留区域的光刻胶;
对所述第一电极进行第二次刻蚀,形成凹凸结构;
剥离剩余的光刻胶。
8.根据权利要求7所述的阵列基板的制备方法,其特征在于,所述第一次刻蚀为湿法刻蚀,所述第二次刻蚀为干法刻蚀。
9.根据权利要求6所述的阵列基板的制备方法,其特征在于,所述在衬底基板上形成薄膜晶体管、彩膜层和第一钝化层的步骤包括:
在衬底基板上形成薄膜晶体管;
在所述薄膜晶体管上形成彩膜层;
在所述彩膜层的上方形成第一钝化层;
所述在所述彩膜层的上方形成第一钝化层的步骤之前包括:
在所述彩膜层上形成平坦层;
在所述平坦层上形成第二电极,所述第一钝化层位于所述第二电极上,所述第二电极为透明电极。
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CN104733456B (zh) * | 2015-03-23 | 2018-04-27 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN105810692A (zh) * | 2016-04-18 | 2016-07-27 | 京东方科技集团股份有限公司 | 阵列基板、显示面板、显示装置及阵列基板制作方法 |
CN107731853A (zh) * | 2017-09-27 | 2018-02-23 | 武汉华星光电技术有限公司 | 一种阵列基板、掩膜板及阵列基板制作方法 |
CN110390886A (zh) * | 2018-04-18 | 2019-10-29 | 群创光电股份有限公司 | 面板及其拼接装置 |
CN111123568A (zh) * | 2019-12-05 | 2020-05-08 | 武汉华星光电技术有限公司 | 显示面板及其制备方法、显示装置 |
CN111933819B (zh) * | 2020-08-12 | 2022-07-22 | 昆山工研院新型平板显示技术中心有限公司 | Oled显示面板及显示装置 |
CN113745242B (zh) * | 2021-07-30 | 2022-07-01 | 惠科股份有限公司 | 阵列基板、显示面板、显示装置及阵列基板的制作方法 |
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