CN104698706B - 一种阵列基板及其制造方法、显示装置 - Google Patents
一种阵列基板及其制造方法、显示装置 Download PDFInfo
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- 238000000034 method Methods 0.000 claims description 18
- 239000007772 electrode material Substances 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 230000005622 photoelectricity Effects 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 5
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- 230000000694 effects Effects 0.000 description 10
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- 239000011159 matrix material Substances 0.000 description 5
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- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 238000000576 coating method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
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- 239000010408 film Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种阵列基板及其制造方法、显示装置,涉及显示技术领域,用于改善显示装置的漏光现象。该阵列基板包括阵列排布的多个像素区,相邻两所述像素区之间设置有信号线,所述像素区与所述信号线之间具有间隙,所述阵列基板还包括至少一个防漏光电极,所述防漏光电极与所述像素区和所述信号线之间绝缘设置,所述防漏光电极在衬底基板的垂直投影至少覆盖所述间隙在所述衬底基板的垂直投影中的一部分。本发明应用于显示技术领域。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种阵列基板及其制造方法、显示装置。
背景技术
目前,常用的液晶显示装置为常白模式的扭曲向列型液晶显示装置,该显示装置包括相互对盒的阵列基板和彩膜基板。
示例性地,如图1所示,阵列基板包括阵列排布的多个像素电极1、位于相邻两列像素电极1’之间的数据线2’、位于相邻两行像素电极1’之间的栅线3’,其中,像素电极1’与数据线2’之间均存在间隙4’,像素电极1’与栅线3’之间也存在间隙4’。彩膜基板包括黑矩阵,黑矩阵用于遮挡相邻两像素电极1’之间的区域,即数据线2’、栅线3’以及间隙4’。
然而,本申请的发明人发现,当阵列基板与彩膜基板沿平行于栅线3’延伸方向的方向存在较大的对位偏差时,如图2所示,黑绝阵5’不能完全遮挡相邻两像素电极1’之间的区域,进而会导致光线从间隙4’射出显示装置,使显示装置出现漏光现象,降低了显示装置的对比度,影响了显示装置的显示效果。
发明内容
本发明的目的在于提供一种显示基板及其制造方法、显示装置,用于改善显示装置的漏光现象。
为达到上述目的,本发明提供了一种显示基板,采用如下技术方案:
一种阵列基板包括阵列排布的多个像素区,相邻两所述像素区之间设置有信号线;所述像素区与所述信号线之间具有间隙,所述阵列基板还包括至少一个防漏光电极,所述防漏光电极与所述像素区和所述信号线之间绝缘设置,所述防漏光电极在衬底基板的垂直投影至少覆盖所述间隙在所述衬底基板的垂直投影中的一部分。
进一步地,所述像素区包括像素电极;所述防漏光电极在所述衬底基板上的垂直投影,覆盖相邻两个所述像素电极在所述衬底基板的垂直投影之间的区域。
示例性地,所述信号线为数据线,所述阵列基板还包括电连接所述数据线和所述像素电极的薄膜晶体管;
所述防漏光电极在所述衬底基板的垂直投影,与所述薄膜晶体管在所述衬底基板的垂直投影无交叠。
进一步地,相邻两个所述防漏光电极通过连接电极电连接。
进一步地,所述阵列基板还包括与所述数据线垂直的公共电极线,所述公共电极线在所述衬底基板的垂直投影与所述像素电极在所述衬底基板的垂直投影之间相互交叠;
所述连接电极在所述衬底基板的垂直投影,位于所述公共电极线在所述衬底基板的垂直投影之内。
可选地,所述防漏光电极所在层,位于所述像素电极所在层与所述信号线所在层之间;
所述防漏光电极所在层与所述像素电极所在层之间设置有第一绝缘层,所述防漏光电极所在层与所述信号线所在层之间设置有第二绝缘层。
可选地,所述防漏光电极所在层,位于所述像素电极所在层上;
所述防漏光电极所在层与所述像素电极所在层之间设置有第一绝缘层。
本发明实施例提供了一种具有以上所述结构的阵列基板,由于该阵列基板包括至少一个防漏光电极,防漏光电极与像素区和信号线之间绝缘设置,防漏光电极在衬底基板的垂直投影至少覆盖间隙在所述衬底基板的垂直投影中的一部分,从而使得防漏光电极能够至少遮挡由光源射向该间隙的一部分光线,进而使得该部分光线无法射出显示装置,从而能够改善显示装置的漏光现象,提高显示装置的对比度,改善显示装置的显示效果。
此外,本发明实施例还提供了一种显示装置,该显示装置包括以上任一项所述的阵列基板。
本发明还提供了一种阵列基板的制造方法,采用如下技术方案:
一种阵列基板的制造方法包括:
形成信号线;
形成像素区;
形成至少一个防漏光电极;
其中,所述像素区与所述信号线之间具有间隙,所述防漏光电极与所述像素区和所述信号线之间绝缘设置,所述防漏光电极在衬底基板的垂直投影至少覆盖所述间隙在所述衬底基板的垂直投影中的一部分。
可选地,形成至少一个防漏光电极的步骤具体包括:
在形成有所述信号线的所述衬底基板上形成第二绝缘层;
在形成有所述第二绝缘层的所述衬底基板上形成防漏光电极材料层,通过一次构图工艺形成包括所述防漏光电极的图形。
形成像素区的步骤具体包括:
在形成有所述防漏光电极的所述衬底基板上形成第一绝缘层;
在形成有所述第一绝缘层的所述衬底基板上形成像素电极材料层,通过一次构图工艺形成包括所述像素电极的图形。
可选地,形成像素区的步骤具体包括:
在所述衬底基板上形成像素电极材料层,通过一次构图工艺形成包括所述像素电极的图形。
形成至少一个防漏光电极的步骤具体包括:
在形成有所述像素电极的所述衬底基板上形成第一绝缘层;
在形成有所述第一绝缘层的所述衬底基板上形成防漏光电极材料层,通过一次构图工艺形成包括所述防漏光电极的图形。
本发明实施例提供了一种阵列基板的制造方法,该制造方法包括在形成信号线;形成像素区;形成至少一个防漏光电极。由于形成的像素区与信号线之间具有间隙,防漏光电极与像素区和信号线之间绝缘设置,防漏光电极在衬底基板的垂直投影至少覆盖间隙在衬底基板的垂直投影中的一部分,从而使得防漏光电极能够至少遮挡由光源射向该间隙的一部分光线,进而使得该部分光线无法射出显示装置,从而能够改善显示装置的漏光现象,提高显示装置的对比度,改善显示装置的显示效果。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为现有技术中的阵列基板的平面示意图;
图2为现有技术中的显示装置沿垂直于数据线延伸方向的截面示意图;
图3为本发明实施例中的第一种阵列基板的平面示意图;
图4为本发明实施例中图3沿A-A’方向的截面示意图;
图5为本发明实施例中的显示装置的局部截面示意图;
图6为本发明实施例中的第二种阵列基板的局部截面示意图。
附图标记说明:
1—阵列基板; 10—衬底基板; 11—像素区;
111—像素电极; 12—信号线; 121—数据线;
13—间隙; 14—防漏光电极; 15—薄膜晶体管;
16—连接电极; 17—第一绝缘层; 18—第二绝缘层;
2—光源; 3—下偏光片; 4—液晶分子层;
5—彩膜基板; 51—公共电极; 52—黑矩阵;
53—彩色滤色层; 6—上偏光片。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例一
本发明实施例提供了一种阵列基板,具体地,如图3和图4所示,该阵列基板1包括阵列排布的像素区11,相邻两像素区11之间设置有信号线12,像素区11与信号线12之间具有间隙13;阵列基板1还包括至少一个防漏光电极14,防漏光电极14与像素区11和信号线12之间绝缘设置,防漏光电极14在衬底基板10的垂直投影至少覆盖间隙13在衬底基板10的垂直投影中的一部分。
示例性地,防漏光电极14的材料可以为氧化铟锡(ITO)、氧化铟锌(IZO)等透明导电材料,或者,金(Au)、银(Ag)、钼(Mo)等不透明导电材料。当防漏光电极14的材料为不透明导电材料时,防漏光电极14本身就能够防止光线的通过,从而使得防漏光电极14能够进一步改善显示装置的漏光现象;当防漏光电极14的材料为透明导电材料时,可以将防漏光电极14与像素区11包括的像素电极111同层设置,从而能够简化阵列基板的制造方法和成本。本发明实施例不对防漏光电极14的具体材料进行限定,本领域技术人员可以根据实际需要进行选择。
本发明实施例提供了一种具有以上所述结构的阵列基板,由于该阵列基板包括至少一个防漏光电极,防漏光电极与像素区和信号线之间绝缘设置,防漏光电极在衬底基板的垂直投影至少覆盖间隙在所述衬底基板的垂直投影中的一部分,从而使得防漏光电极能够至少遮挡由光源射向该间隙的一部分光线,进而使得该部分光线无法射出显示装置,从而能够改善显示装置的漏光现象,进而提高显示装置的对比度,改善显示装置的显示效果。
为了便于本领域技术人员理解,下面以包括本发明实施例中的阵列基板的显示装置为常白模式的扭曲向列型液晶显示装置为例,对防漏光电极4如何改善显示装置的漏光现象进行详细的分析。
如图5所示,该显示装置包括依次层叠设置的光源2、下偏光片3、阵列基板1、液晶分子层4、彩膜基板5和上偏光片6。其中,下偏光片3的透光轴方向和上偏光片6的透光轴方向相互垂直,彩膜基板5上设置有板状的公共电极51。在显示装置的使用过程中,本发明实施例中的阵列基板1上的防漏光电极14与彩膜基板5上的公共电极51之间形成电场,该电场使得防漏光电极14所在位置处的液晶分子均沿长轴垂直于阵列基板1的方向排列,从而使得穿过下偏光片3的光线穿过该部分液晶分子后,光线的偏振状态不发生改变,从而无法从上偏光片6射出。因此,防漏光电极14的设置能够使得至少由光源2射向该间隙的一部分光线无法射出显示装置,从而能够改善显示装置的漏光现象,提高显示装置的对比度,改善显示装置的显示效果。
在显示装置的驱动过程中,对于除防漏光电极14之外的其他结构的驱动方法与现有技术相同或类似,而对于防漏光电极14而言,也只需要在显示装置的驱动过程一直向防漏光电极14上输入固定的信号,使防漏光电极14与彩膜基板5上的公共电极51之间形成电场,以使得防漏光电极14所在位置处的液晶分子均沿长轴垂直于阵列基板1的方向排列即可,本发明实施例不再对显示装置的驱动方法进行赘述。
进一步地,像素区11包括像素电极111,防漏光电极14在衬底基板10上的垂直投影,覆盖相邻两个像素电极111在衬底基板10的垂直投影之间的区域,从而使得防漏光电极14能够将射向相邻两像素电极111之间的区域的光线完全遮挡,从而使得间隙13处的漏光现象完全被消除,最大程度上改善了显示装置的漏光现象,提高了显示装置的对比度,改善了显示装置的显示效果。
示例性地,信号线12可以为阵列基板1上设置的数据线和/或栅线,即信号线12为数据线,或者,信号线12为栅线,或者,信号线12包括数据线和栅线。其中,当信号线12包括数据线和栅线时,防漏光电极14在衬底基板10的垂直投影至少覆盖数据线与像素区11之间的间隙13在衬底基板10的垂直投影中的一部分,以及栅线与像素区11之间的间隙13在衬底基板10的垂直投影中的一部分,从而使得无论阵列基板1和彩膜基板5在平行于栅线的延伸方向的方向上,或者,在平行于数据线的延伸方向的方向上出现对位误差,防漏光电极14的设置均可以改善显示装置的漏光现象。
本申请的发明人发现,阵列基板1和彩膜基板5对盒时,通常沿平行于栅线延伸方向的方向出现对位偏差,因此,漏光出现在数据线与像素区11之间的间隙13处,为了简化阵列基板1的制造方法,本发明实施例中优选,如图3所示,信号线12为数据线121,即防漏光电极14在衬底基板10的垂直投影至少覆盖数据线121与像素区11之间的间隙13在衬底基板10的垂直投影中的一部分。
进一步地,当信号线12为数据线121时,阵列基板1还包括电连接数据线121和像素电极111的薄膜晶体管15,防漏光电极14在衬底基板10的垂直投影,与薄膜晶体管15在衬底基板10的垂直投影无交叠,从而能够避免防漏光电极14与薄膜晶体管15之间的相互影响,有助于改善显示装置的显示效果。
进一步地,相邻两个防漏光电极14通过连接电极16电连接,从而能够将所有防漏光电极14连接成一个导电网格,以降低防漏光电极14的电阻,从而能够降低防漏光电极14的电压降(IR drop)现象,提高防漏光电极14上信号的均一性。
进一步地,阵列基板1还包括与数据线121垂直的公共电极线(图中未示出),公共电极线在衬底基板10的垂直投影与像素电极111在衬底基板10的垂直投影之间相互交叠,从而使得公共电极线和像素电极111形成存储电容,以使像素区11实现显示。进一步地,连接电极16在衬底基板10的垂直投影,位于公共电极线在衬底基板10的垂直投影之内,从而使得连接电极16的设置不会降低阵列基板1的开口率。
需要说明的是,以上均描述的是防漏光电极14与像素区11的像素电极111、信号线12等结构的平面位置关系,下面本发明实施例还将对防漏光电极14与像素电极111、信号线12等结构的层叠位置关系进行描述。
可选地,如图4所示,防漏光电极14所在层,位于像素电极111所在层与信号线12所在层之间,防漏光电极14所在层与像素电极111所在层之间设置有第一绝缘层17,防漏光电极14所在层与信号线12所在层之间设置有第二绝缘层18,从而使得信号线12与像素电极111之间的距离增大,且防漏光电极14能够屏蔽像素电极111与信号线12之间的信号干扰,从而能够有效改善阵列基板1上的信号线12与像素电极111之间串扰不良。
可选地,如图6所示,防漏光电极14所在层,位于像素电极111所在层上,防漏光电极14所在层与像素电极111所在层之间设置有第一绝缘层17,从而使得防漏光电极14与液晶分子层4和彩膜基板5上的公共电极51之间的距离均较近,使得防漏光电极14对液晶分子的控制能力强,能够较好地改善显示装置的漏光现象,提高显示装置的对比度,改善显示装置的显示效果。
此外,本发明实施例还提供了一种显示装置,该显示装置包括以上任一项所述的阵列基板。具体地,如图5所示,该显示装置还包括光源2、下偏光片3、液晶分子层4、彩膜基板5和上偏光片6,其中,光源2、阵列基板1、下偏光片3、液晶分子层4、彩膜基板5和上偏光片6依次层叠设置;下偏光片3的透光轴方向和上偏光片6的透光轴方向相互垂直;彩膜基板5上设置有网格状的黑矩阵52、位于黑矩阵52围成的区域内的彩色滤色层53以及覆盖于黑矩阵和彩色滤色层上的公共电极51。
由于显示装置包括的阵列基板具有以上结构,从而使得该显示装置的漏光现象得到改善,提高了显示装置的对比度,改善了显示装置的显示效果。
实施例二
本发明提供了一种用于制造实施例一中所述的阵列基板的制造方法,具体地,该制造方法包括:
步骤S701、形成信号线。
形成信号线的步骤可以根据信号线为何种具体结构而不同。示例性地,信号线为栅线时,形成信号线的步骤包括:形成一层栅极金属层,经过构图工艺,形成包括栅线的图形。信号线为数据线时,形成信号线的步骤包括:形成一层源漏极金属层,经过构图工艺,形成包括数据线的图形。信号线包括栅线和数据线时,形成信号线的步骤包括:形成一层栅极金属层,经过构图工艺,形成包括栅线的图形,以及,形成一层源漏极金属层,经过构图工艺,形成包括数据线的图形。
需要说明的是,如无特殊说明,本发明实施例中的构图工艺包括涂布光刻胶,使用具有图案的掩膜板掩膜,曝光,显影,刻蚀和剥离光刻胶的步骤。
步骤S702、形成像素区。
示例性地,当像素区包括像素电极时,形成像素区的步骤包括:形成一层像素电极材料层,经过构图工艺,形成包括像素电极的图形。
步骤S703、形成至少一个防漏光电极。
示例性地,形成至少一个防漏光电极的步骤包括:形成一层防漏光电极材料层,经过构图工艺,形成包括至少一个防漏光电极的图形。其中,像素区与信号线之间具有间隙,防漏光电极与像素区和信号线之间绝缘设置,防漏光电极在衬底基板的垂直投影至少覆盖间隙在衬底基板的垂直投影中的一部分。
本发明实施例提供的阵列基板的制造方法还可以包括和现有技术中阵列基板的制造方法中相同或相似的步骤,本发明实施例不再一一赘述。
为了便于本领域技术人员理解,下面本发明实施例提供两种最为具体的阵列基板的制造方法:
第一种制造方法,用以制造如图4所示的阵列基板1,即阵列基板1上的防漏光电极14所在层,位于像素电极111所在层与信号线12所在层之间,防漏光电极14所在层与像素电极111所在层之间设置有第一绝缘层17,防漏光电极14所在层与信号线12所在层之间设置有第二绝缘层18。
示例性地,第一种制造方法包括:
步骤S801、在形成有信号线的衬底基板上形成第二绝缘层。
步骤S802、在形成有第二绝缘层的衬底基板上形成防漏光电极材料层,通过一次构图工艺形成包括防漏光电极的图形。
步骤S803、在形成有防漏光电极的衬底基板上形成第一绝缘层。
步骤S804、在形成有第一绝缘层的衬底基板上形成像素电极材料层,通过一次构图工艺形成包括像素电极的图形。
第二种制造方法,用以制造如图6所示的阵列基板1,即阵列基板1上的防漏光电极14所在层,位于像素电极111所在层上,防漏光电极14所在层与像素电极111所在层之间设置有第一绝缘层17。
示例性地,第二种制造方法包括:
步骤S901、在衬底基板上形成像素电极材料层,通过一次构图工艺形成包括像素电极的图形。
步骤S902、在形成有像素电极的衬底基板上形成第一绝缘层。
步骤S903、在形成有第一绝缘层的衬底基板上形成防漏光电极材料层,通过一次构图工艺形成包括防漏光电极的图形。
本发明实施例提供了一种阵列基板的制造方法,该制造方法包括在衬底基板上形成信号线;在衬底基板上形成像素区;在衬底基板上形成至少一个防漏光电极。由于形成的像素区与信号线之间具有间隙,防漏光电极与像素区和信号线之间绝缘设置,防漏光电极在衬底基板的垂直投影至少覆盖间隙在衬底基板的垂直投影中的一部分,从而使得防漏光电极能够至少遮挡由光源射向该间隙的一部分光线,进而使得该部分光线无法射出显示装置,从而能够改善显示装置的漏光现象,提高显示装置的对比度,改善显示装置的显示效果。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。
Claims (7)
1.一种阵列基板,包括阵列排布的多个像素区,所述像素区包括像素电极,相邻两所述像素区之间设置有信号线,所述像素区与所述信号线之间具有间隙,其特征在于,所述阵列基板还包括至少一个防漏光电极,所述防漏光电极与所述像素区和所述信号线之间绝缘设置,所述防漏光电极在衬底基板的垂直投影至少覆盖所述间隙在所述衬底基板的垂直投影中的一部分;
其中,所述防漏光电极所在层,位于所述像素电极所在层与所述信号线所在层之间;
所述防漏光电极所在层与所述像素电极所在层之间设置有第一绝缘层,所述防漏光电极所在层与所述信号线所在层之间设置有第二绝缘层。
2.根据权利要求1所述的阵列基板,其特征在于,所述防漏光电极在所述衬底基板上的垂直投影,覆盖相邻两个所述像素电极在所述衬底基板的垂直投影之间的区域。
3.根据权利要求2所述的阵列基板,其特征在于,所述信号线为数据线,所述阵列基板还包括电连接所述数据线和所述像素电极的薄膜晶体管;
所述防漏光电极在所述衬底基板的垂直投影,与所述薄膜晶体管在所述衬底基板的垂直投影无交叠。
4.根据权利要求3所述的阵列基板,其特征在于,相邻两个所述防漏光电极通过连接电极电连接。
5.根据权利要求4所述的阵列基板,其特征在于,还包括与所述数据线垂直的公共电极线,所述公共电极线在所述衬底基板的垂直投影与所述像素电极在所述衬底基板的垂直投影之间相互交叠;
所述连接电极在所述衬底基板的垂直投影,位于所述公共电极线在所述衬底基板的垂直投影之内。
6.一种显示装置,其特征在于,包括权利要求1-5任一项所述的阵列基板。
7.一种阵列基板的制造方法,其特征在于,包括:
形成信号线;
形成像素区,所述像素区包括像素电极;
形成至少一个防漏光电极;
其中,所述像素区与所述信号线之间具有间隙,所述防漏光电极与所述像素区和所述信号线之间绝缘设置,所述防漏光电极在衬底基板的垂直投影至少覆盖所述间隙在所述衬底基板的垂直投影中的一部分;
所述形成至少一个防漏光电极的步骤具体包括:
在形成有所述信号线的所述衬底基板上形成第二绝缘层;
在形成有所述第二绝缘层的所述衬底基板上形成防漏光电极材料层,通过一次构图工艺形成包括所述防漏光电极的图形;
所述形成像素区的步骤具体包括:
在形成有所述防漏光电极的所述衬底基板上形成第一绝缘层;
在形成有所述第一绝缘层的所述衬底基板上形成像素电极材料层,通过一次构图工艺形成包括所述像素电极的图形。
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