CN104698537A - Aluminum nitride-based guided-mode resonant multichannel light filter and preparation method thereof - Google Patents
Aluminum nitride-based guided-mode resonant multichannel light filter and preparation method thereof Download PDFInfo
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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Abstract
Discloses an aluminum nitride-based guided-mode resonant multichannel light filter and a preparation method thereof. The aluminum nitride-based guided-mode resonant multichannel light filter comprises a silicon substrate layer, an aluminum nitride waveguide layer and an aluminum nitride optical grating; the aluminum nitride optical grating is composed of a plurality of rows of linear optical grating arrays different in cycles. The aluminum nitride-based guided-mode resonant multichannel light filter of a visible light waveband is realized on a silicon substrate aluminum nitride chip; techniques such as electron beam lithography, ion beam etching, photoetching and deep reactive ion etching are adopted to define and etch the device, and a back registration process and a deep silicon etching technique are adopted to remove the silicon substrate under the aluminum nitride optical grating, so that the aluminum nitride layer is completely suspended. The light filter realizes multichannel light filtration within the visible light waveband by use of the guided-mode resonance characteristic of the optical gratings different in cycle.
Description
Technical field
The invention belongs to information material and device arts, relate to aluminum-nitride-based guide mode resonance Multi channel filters and preparation method thereof.
Background technology
Aluminium nitride is III-V race's covalent compound, is the semiconductor that in III-V race, edge energy (about 6.2eV) is maximum.Aluminium nitride material chemical stability is good, fusing point is high, physical strength is high, electrical insulation capability is good.Because its film has high index of refraction, high permeability, the features such as low extinction coefficient, make it have broad application prospects in fields such as machinery, microelectronics, optics.
The guide mode resonance of diffraction grating refers to when incident wavelength, incident angle or medium parameter do very little change, the diffracted wave energy phenomenon that great changes will take place.Guide mode resonance is because diffraction grating can regard the slab guide of periodic modulation as, when the guided mode that senior propagation wave in grating is supported with grating waveguide in parameter close to time, light-wave energy redistributes, periodic modulation due to grating makes grating waveguide have leakage, thus leakage waves energy also will redistribute, and form guide mode resonance.Utilize high-diffraction efficiency and the arrowband character of guide mode resonance effect, the optical elements such as high reverse--bias device, high transilluminator and narrowband light filter can be designed and produced.
Existing guide mode resonance Multi channel filters, mainly for the light of vertical incidence, is realized the resonance of multiple pattern, thus reaches the effect of hyperchannel optical filtering by the thickness increasing the structure of the light filter number of plies or increase ducting layer.These technical design methods are loaded down with trivial details, complex manufacturing technology.
Summary of the invention
technical matters:the invention provides a kind of hyperchannel realized in visible light wave range to filter, and achieve port number and the controlled aluminum-nitride-based guide mode resonance Multi channel filters of channel position, this light filter, when non-normal incidence, also can produce harmonic peak at special angle.The present invention provides a kind of method preparing this light filter simultaneously.
technical scheme:a kind of aluminum-nitride-based guide mode resonance Multi channel filters of the present invention, with silica-based aluminium nitride wafer for carrier, comprise layer-of-substrate silicon, the aluminium nitride ducting layer be arranged in layer-of-substrate silicon, the aluminium nitride grating be arranged on aln layer ducting layer, one is through to aluminium nitride ducting layer lower surface cavity from bottom is provided with in layer-of-substrate silicon, aluminium nitride grating is arranged by the striated pattern tile vertical arranging different cycles more, is connected in sequence.
In the preferred version of light filter of the present invention, aln layer ducting layer is provided with aluminium nitride device layer, be divided into grating setting area, be positioned at the marginarium of both sides, described grating setting area, isolation channel is had between described marginarium and grating setting area, marginarium is connected by supporting construction with grating setting area, partial silicon substrate layer corresponding below grating setting area etches as cavity completely, and the sidewall of described cavity is connected with the marginarium of top.
In the preferred version of light filter of the present invention, the striated pattern in aluminium nitride grating is linear sub-wavelength period grating.
In the preferred version of light filter of the present invention, the thickness of aln layer ducting layer is 200nm-1000nm.
In the preferred version of light filter of the present invention, by changing the cycle of each grating in aluminium nitride grating, the channel position realizing visible light wave range Multi channel filters is adjustable.
In the preferred version of light filter of the present invention, by changing the row of grating in aluminium nitride grating, the number of active lanes realizing guide mode resonance Multi channel filters is adjustable.
The present invention prepares the method for above-mentioned aluminum-nitride-based guide mode resonance Multi channel filters, comprises following concrete steps:
1) at aln layer upper surface spin coating one deck electron beam glue-line of silica-based aluminium nitride wafer, electron beam lithography is adopted to define aluminium nitride device layer on described electron beam glue-line, described aluminium nitride device layer comprises grating setting area, is positioned at the marginarium of both sides, described grating setting area, have isolation channel between described marginarium and grating setting area, marginarium is connected by supporting construction with grating setting area;
In the grating setting area of aluminium nitride device layer, define the device architecture of aluminium nitride grating, i.e. the linear period optical grating construction of many row's tile verticals arrangement simultaneously;
Adopt ion beam bombardment lithographic technique to transfer to aln layer by the aluminium nitride device layer of definition and aluminium nitride grating device structure from electron beam glue-line, form aluminium nitride grating, then utilize oxygen plasma ashing method to remove remaining electron beam glue-line;
2) spin coating one deck photoresist layer on aluminium nitride grating, adopts lithography alignment technology, and on photoresist layer, definition connects the supporting construction of marginarium and grating setting area; Adopt ion beam bombardment lithographic technique that the supporting construction of definition is transferred to aluminium nitride device layer, the overseas aluminium nitride ducting layer in marginarium and support structure region is carved and wears, obtain being positioned at the supporting construction on aluminium nitride device layer, then utilize oxygen plasma ashing method to remove residual photoresist;
3) at upper surface spin coating one deck photoresist layer again of aluminium nitride device layer, in order to protect aluminium nitride grating and supporting construction, simultaneously at layer-of-substrate silicon lower surface spin coating one deck photoresist layer of silica-based aluminium nitride wafer; Utilize technique of alignment behind, the photoresist layer of layer-of-substrate silicon lower surface is opened an etching window;
4) using aluminium nitride ducting layer as etching barrier layer, utilize deep reaction ion etching technology, by described etching window, layer-of-substrate silicon is run through the lower surface being etched to aluminium nitride ducting layer, form a cavity, the sidewall of cavity is corresponding with marginarium to be connected; Finally adopt oxygen incinerator technology to remove remaining photoresist layer, realize the guide mode resonance aluminium nitride grating device based on silica-based aluminium nitride wafer.
In the preferred version of the inventive method, step 2) in the aluminium nitride grating device structure of definition be linear sub-wavelength period optical grating construction.
In the preferred version of the inventive method, the thickness of the aln layer in step 1) is 200nm-1000nm.
beneficial effect:the present invention compared with prior art, has the following advantages:
(1) existing guide mode resonance Multi channel filters is the guide mode resonance of the photonic crystal utilizing two dimension, and method for designing is complicated, and manufacture craft is loaded down with trivial details.Aluminum-nitride-based guide mode resonance Multi channel filters of the present invention utilizes the guide mode resonance effect of the grating of multiple different cycles, obtains multiple controlled resonance peak, thus the hyperchannel achieving visible light wave range filters, and principle is simple, and manufacture craft is succinct.
(2) change of the row of grating can change the resonance peak number of guide mode resonance, and the present invention, by changing the array row of different cycles grating, can realize the change of light filter port number.
(3) change in the cycle of grating can change guide mode resonance effect resonance peak residing for wavelength location, the present invention, by changing the cycle of grating, can realize the change of filter channel position.
(4) existing guide mode resonance Multi channel filters is mainly very to the light of vertical incidence, can not produce harmonic peak, reach filter effect under non-normal incidence.Aluminum-nitride-based guide mode resonance Multi channel filters of the present invention, in the acting in conjunction of the grating guide mode resonance of multiple different cycles, at normal incidence, produces multiple symmetrical harmonic peak, thus realizes the optical filtering for vertical incidence light; When non-normal incidence, also can produce multiple asymmetric harmonic peak at special angle, thus realize the optical filtering for non-normal incidence light.
(5) existing guide mode resonance Multi channel filters is the resonance realizing multiple pattern by thickening ducting layer (more than 100 microns), aluminum-nitride-based guide mode resonance Multi channel filters of the present invention is the superposition utilizing multiple single mode to resonate, device size only has several micron, easily and silicon microelectric technique integrated.
(6) the present invention develops technique behind, and by photoetching technique and dark silicon etching technology, complete etched features underlying silicon substrate material, realizes unsettled device, solves the ABSORPTION AND SCATTERING problem to emergent light of silicon materials.
(7) adopt photoetching technique to define supporting construction in the present invention, efficiently solve the stress relief problem that aluminum nitride thin rete produces in etching.
The present invention is based on HR-Si substrate aluminium nitride material, aluminium nitride material compared with traditional silicon wafer material, near infrared particularly visible light wave range there is excellent optical property.
Accompanying drawing explanation
Fig. 1 is the schematic top plan view of the aluminum-nitride-based guide mode resonance Multi channel filters of the present invention;
Fig. 2 is the schematic side view of the aluminum-nitride-based guide mode resonance Multi channel filters of the present invention;
Fig. 3 is preparation technology's process flow diagram of the aluminum-nitride-based guide mode resonance Multi channel filters of the present invention;
Fig. 4 is the partial schematic diagram of the aluminum-nitride-based guide mode resonance Multi channel filters of the present invention.
Have in figure: layer-of-substrate silicon 1, aluminium nitride ducting layer 2, aluminium nitride grating 3, grating setting area 21, marginarium 22, supporting construction 23.
Embodiment
Below in conjunction with Figure of description and embodiment, technical scheme of the present invention is described in further detail:
As shown in Figure 1, the schematic top plan view of aluminum-nitride-based guide mode resonance Multi channel filters of the present invention, silica-based aluminium nitride wafer is provided with one piece of circular aluminium nitride device area, and under this circular aluminium nitride device area, layer-of-substrate silicon 1 is etched completely as cavity, is circular aluminium nitride film.Square grating setting area is provided with in circular aluminum nitride thin diaphragm area, four limits of grating setting area are connected by the marginarium 22 of supporting construction with circular aluminium nitride device area, all carve except grating setting area 21 in circular aluminium nitride device area and wear, formed thus and carved the isolation channel worn completely between grating setting area 21 and marginarium 22, grating setting area 21 becomes completely unsettled aluminium nitride photonic device.Wherein more grating setting area 21 is arranged by the linear period grating tile vertical arranging different cycles, be connected in sequence, row's grating is herein the periodic grating seam of a row etched at aln layer, at the length direction of grating seam, the grating of arrangement many rows different cycles, joins end to end successively.Should be noted that and the circular aluminum nitride thin diaphragm area of polylith can be set on silica-based aluminium nitride wafer, thus the device of multiple different parameters is set on one piece of wafer, to satisfy the demands.
As shown in Figure 2, the side view of aluminum-nitride-based guide mode resonance Multi channel filters of the present invention, be provided with the cavity that is through to aluminium nitride ducting layer 2 lower surface in layer-of-substrate silicon 1, aluminium nitride ducting layer 2 upper surface is etched with linear period grating, i.e. aluminium nitride grating 3.
The Multi channel filters of the aluminum-nitride-based guide mode resonance in the present invention, utilizes dark silicon etching technology, solves the stripping problem of layer-of-substrate silicon 1 and aluminium nitride ducting layer 2, achieves unsettled resonance photonic device; In addition, utilize the large refractive index difference had between the aluminium nitride grating 3 of photonic device structure and air, can play very strong restriction to light field, for realizing microminiaturization, highdensity micro-nano photonic device provides physical basis.
As shown in Figure 3, the preparation method of the above-mentioned aluminum-nitride-based Multi channel filters based on guide mode resonance of the present invention, comprises the steps:
1) at aln layer 2 upper surface spin coating one deck electron beam glue-line of silica-based aluminium nitride wafer, electron beam lithography is adopted to define aluminium nitride device layer on described electron beam glue-line, described aluminium nitride device layer is the circular aluminium nitride film device area on silica-based aluminium nitride, comprise grating setting area 21, be positioned at the marginarium 22 of both sides, described grating setting area 21, have isolation channel between described marginarium 22 and grating setting area 21, marginarium 22 is connected by supporting construction 23 with grating setting area 21;
In the grating setting area 21 of aluminium nitride device layer, define the device architecture of aluminium nitride grating simultaneously, the i.e. linear period optical grating construction of many row's tile verticals arrangement, row's grating is herein the periodic grating seam of a row etched at aln layer, at the length direction of grating seam, the grating of arrangement many rows different cycles, joins end to end successively;
Ion beam bombardment lithographic technique is adopted to transfer to aln layer 2 by the aluminium nitride device layer (comprising aluminium nitride grating device structure) of definition from electron beam glue-line, form aluminium nitride grating 3, then utilize oxygen plasma ashing method to remove remaining electron beam glue-line;
2) spin coating one deck photoresist layer on aluminium nitride grating 3, adopts lithography alignment technology, and on photoresist layer, definition connects the supporting construction 23 of marginarium 22 and grating setting area 21, and described supporting construction 23 is positioned at every bar limit of square grating setting area; Adopt ion beam bombardment lithographic technique that the supporting construction of definition is transferred to aluminium nitride device layer, marginarium 22 and supporting construction 23 extra-regional aluminium nitride ducting layer 2 are worn quarter, obtain the supporting construction 23 be positioned on aluminium nitride device layer, then utilize oxygen plasma ashing method to remove residual photoresist;
3) at upper surface spin coating one deck photoresist layer again of aluminium nitride device layer, in order to protect aluminium nitride grating 3 and supporting construction 23, simultaneously at layer-of-substrate silicon 1 lower surface spin coating one deck photoresist layer of silica-based aluminium nitride wafer; Utilize technique of alignment behind, the photoresist layer of layer-of-substrate silicon 1 lower surface is opened an etching window, make the layer-of-substrate silicon that photoresist is only corresponding below marginarium 22;
4) using aluminium nitride ducting layer 2 as etching barrier layer, utilize deep reaction ion etching technology, by described etching window, layer-of-substrate silicon 1 is run through the lower surface being etched to aluminium nitride ducting layer 2, in layer-of-substrate silicon 1, form a cylindrical cavity be positioned at below aluminium nitride ducting layer, the sidewall of cavity is corresponding with marginarium 22 to be connected; Finally adopt oxygen incinerator technology to remove remaining photoresist layer, realize the guide mode resonance aluminium nitride grating device based on silica-based aluminium nitride wafer.
In the preferred embodiment of the inventive method, step 2) in the aluminium nitride grating device structure of definition be linear sub-wavelength period optical grating construction.In another preferred embodiment, the thickness of the aln layer 2 in step 1) is 200nm-1000nm.
Above-described embodiment is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention; some improvement and equivalent replacement can also be made; these improve the claims in the present invention and are equal to the technical scheme after replacing, and all fall into protection scope of the present invention.
Claims (9)
1. an aluminum-nitride-based guide mode resonance Multi channel filters, it is characterized in that, this light filter with silica-based aluminium nitride wafer for carrier, comprise layer-of-substrate silicon (1), the aluminium nitride ducting layer (2) be arranged in described layer-of-substrate silicon (1), the aluminium nitride grating (3) be arranged on described aln layer ducting layer (2), one is through to aluminium nitride ducting layer (2) lower surface cavity from bottom is provided with in described layer-of-substrate silicon (1), described aluminium nitride grating (3) is arranged by the striated pattern tile vertical arranging different cycles more, is connected in sequence.
2. guide mode resonance Multi channel filters aluminum-nitride-based according to claim 1, it is characterized in that, described aln layer ducting layer (2) is provided with aluminium nitride device layer, be divided into grating setting area (21), be positioned at the marginarium (22) of described grating setting area (21) both sides, isolation channel is had between described marginarium (22) and grating setting area (21), marginarium (22) is connected by supporting construction (23) with grating setting area (21), the partial silicon substrate layer (1) of below, grating setting area (21) correspondence etches as cavity completely, the sidewall of described cavity is connected with the marginarium (22) of top.
3. guide mode resonance Multi channel filters aluminum-nitride-based according to claim 1 or 2, is characterized in that, the striated pattern in described aluminium nitride grating (3) is linear sub-wavelength period grating.
4. guide mode resonance Multi channel filters aluminum-nitride-based according to claim 1 or 2, is characterized in that, the thickness of described aln layer ducting layer (2) is 200nm-1000nm.
5. guide mode resonance Multi channel filters aluminum-nitride-based according to claim 1 or 2, is characterized in that, by changing the cycle of each grating in aluminium nitride grating (3), the channel position realizing visible light wave range Multi channel filters is adjustable.
6. guide mode resonance Multi channel filters aluminum-nitride-based according to claim 1 or 2, is characterized in that, by changing the row of grating in aluminium nitride grating (3), the number of active lanes realizing guide mode resonance Multi channel filters is adjustable.
7. prepare a method for aluminum-nitride-based guide mode resonance Multi channel filters, it is characterized in that, the method, comprises the following steps for carrier with silica-based aluminium nitride wafer:
1) at aln layer (2) upper surface spin coating one deck electron beam glue-line of silica-based aluminium nitride wafer, electron beam lithography is adopted to define aluminium nitride device layer on described electron beam glue-line, described aluminium nitride device layer comprises grating setting area (21), is positioned at the marginarium (22) of described grating setting area (21) both sides, have isolation channel between described marginarium (22) and grating setting area (21), marginarium (22) are connected by supporting construction (23) with grating setting area (21);
The device architecture of definition aluminium nitride grating in simultaneously in the grating setting area (21) of aluminium nitride device layer, i.e. the linear period optical grating construction of many row's tile verticals arrangement;
Ion beam bombardment lithographic technique is adopted to transfer to aln layer (2) by the aluminium nitride device layer of definition and aluminium nitride grating device structure from electron beam glue-line, form aluminium nitride grating (3), then utilize oxygen plasma ashing method to remove remaining electron beam glue-line;
2) at the upper spin coating one deck photoresist layer of aluminium nitride grating (3), adopt lithography alignment technology, on photoresist layer, definition connects the supporting construction (23) of marginarium (22) and grating setting area (21); Adopt ion beam bombardment lithographic technique that the supporting construction of definition is transferred to aluminium nitride device layer, marginarium (22) and the extra-regional aluminium nitride ducting layer (2) of supporting construction (23) are carved and wears, obtain the supporting construction (23) be positioned on aluminium nitride device layer, then utilize oxygen plasma ashing method to remove residual photoresist;
3) at upper surface spin coating one deck photoresist layer again of aluminium nitride device layer, in order to protect aluminium nitride grating (3) and supporting construction (23), simultaneously at layer-of-substrate silicon (1) lower surface spin coating one deck photoresist layer of silica-based aluminium nitride wafer; Utilize technique of alignment behind, the photoresist layer of layer-of-substrate silicon (1) lower surface is opened an etching window;
4) using aluminium nitride ducting layer (2) as etching barrier layer, utilize deep reaction ion etching technology, by described etching window, layer-of-substrate silicon (1) is run through the lower surface being etched to aluminium nitride ducting layer (2), form a cavity, the sidewall of cavity is corresponding with marginarium (22) to be connected; Finally adopt oxygen incinerator technology to remove remaining photoresist layer, realize the guide mode resonance aluminium nitride grating device based on silica-based aluminium nitride wafer.
8. preparation method according to claim 7, is characterized in that, described step 2) in definition aluminium nitride grating device structure be linear sub-wavelength period optical grating construction.
9. the preparation method according to claim 7 or 8, is characterized in that, the thickness of the aln layer (2) in described step 1) is 200nm-1000nm.
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| CN111175871A (en) * | 2020-01-15 | 2020-05-19 | 中山大学 | Sub-wavelength grating structure based on near-symmetrical protection type continuous bound state |
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| CN111679364A (en) * | 2020-06-02 | 2020-09-18 | 中国科学院上海微***与信息技术研究所 | Suspended edge coupler applied to intermediate infrared band |
| CN111679364B (en) * | 2020-06-02 | 2021-07-27 | 中国科学院上海微***与信息技术研究所 | Suspended edge coupler applied to intermediate infrared band |
| CN114815048A (en) * | 2022-03-09 | 2022-07-29 | 上海交通大学 | Silicon-based aluminum nitride hybrid waveguide and implementation method thereof |
| CN114815048B (en) * | 2022-03-09 | 2023-11-14 | 上海交通大学 | Silicon-based aluminum nitride mixed waveguide and implementation method thereof |
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Application publication date: 20150610 |