CN103367370B - Silica-based wide spectral integrated light detector of sub-wave length grating reflection enhancement type and preparation method thereof - Google Patents
Silica-based wide spectral integrated light detector of sub-wave length grating reflection enhancement type and preparation method thereof Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
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Abstract
The present invention relates to photoelectron technical field, provide silica-based wide spectral integrated light detector of a kind of sub-wave length grating reflection enhancement type and preparation method thereof.Described photo-detector comprises the layer-of-substrate silicon, silicon oxide liner bottom, sub-wave length grating layer, resin bed, N-shaped epitaxial loayer, intrinsic layer, the p-type epitaxial layer that are formed successively from the bottom to top, and is formed in N-shaped contact electrode on N-shaped epitaxial loayer and is formed in the p-type contact electrode in p-type epitaxial layer; Wherein, sub-wave length grating layer comprises the grating with specific pattern be fabricated from a silicon.Device of the present invention is easy to integrated, wide spectral range high-quantum efficiency, high-frequency responsive bandwidth; Related process cost is low simultaneously, technique simple, be easy to realization.The invention solves the problem of the mutual restriction of conventional semiconductors photo-detector quantum efficiency and frequency response bandwidth, the field such as optical communication and optical signal prosessing can be widely used in.
Description
Technical field
The present invention relates to photoelectron technical field, particularly silica-based wide spectral integrated light detector of a kind of sub-wave length grating reflection enhancement type and preparation method thereof.
Background technology
Along with the quick growth of message capacity, the energy consumption of the network terminal and node device, volume and reliability more and more become serious problem, the sub-device of Traditional photovoltaic, due to the limiting factor of its material, Structure and energy self, cannot meet the needs of generation information technical development.The silicon-based photonics integration device based on new function micro-structural with more powerful, higher reliability, more small size is the important directions of Information Technology Development, and it has broad application prospects in broad band intelligent optical-fiber network, high speed optical communication, automatic measuring and controlling and national defense construction etc.
Along with the quick growth of message capacity, the requirement of system to response device bandwidth improves greatly, wishes, in the wide spectral range of whole optical fiber communication long wavelength (1.2 μm ~ 1.6 μm) low loss window, can realize higher quantum efficiency simultaneously.But for traditional vertical-type p-i-n photo-detector, frequency response bandwidth and the quantum efficiency of device restrict mutually.Although can the quantum efficiency of increased device by the absorbed layer that increases device, due to the restriction effect of carrier transport time, the speed of response of device will obviously decline.KatsumiKishino and M.Selim
resonant cavity enhanced (RCE) photo-detector proposed in 1991 to some extent solves the mutual restriction problem existed between device quantum efficiencies and the speed of response.The basic structure of RCE photo-detector is inserted in resonant cavity by absorbed layer, due to the enhancement effect of resonant cavity, namely such devices can obtain higher quantum efficiency when thinner absorbed layer, decrease the transit time of photo-generated carrier at absorbed layer simultaneously, thus can obtain high quantum efficiency and high response speed simultaneously.But, RCE photo-detector scientific research and move towards practicality process in equally also have some difficulties:
(1) due to the frequency-selecting effect of resonant cavity, device has certain wavelength selectivity, and device quantum efficiencies only obtains and strengthens in limited scope, is not therefore suitable for the needs of wide spectral response.
(2) for the semiconductor device of optical communication system mainly based on InP based material, due to InP Lattice Matching InP based material between refringence smaller, be difficult to obtain practical distribution Bragg reflector (DBR).So the preparation of single chip integrated long wavelength (1550nm wave band) RCE structure devices remains a difficult point.
(3) optic communication device is mainly based on Group III-V semiconductor device, still has difficulties with based on the silicon based photon of CMOS technology or the integrated of electronic device.
Summary of the invention
(1) technical problem that will solve
For the shortcoming of prior art, the present invention, in order to solve the problem of the mutual restriction of semiconductor photodetector quantum efficiency and frequency response bandwidth in prior art, provides silica-based wide spectral integrated light detector of a kind of sub-wave length grating reflection enhancement type and preparation method thereof.
(2) technical scheme
Solve the problems of the technologies described above, the present invention specifically adopts following scheme to carry out for this reason:
First, the invention provides the silica-based wide spectral integrated light detector of a kind of sub-wave length grating reflection enhancement type, described photo-detector comprises:
The layer-of-substrate silicon formed successively from the bottom to top, silicon oxide liner bottom, sub-wave length grating layer, resin bed, N-shaped epitaxial loayer, intrinsic layer, p-type epitaxial layer, and be formed in N-shaped contact electrode on N-shaped epitaxial loayer and be formed in the p-type contact electrode in p-type epitaxial layer;
Wherein, described sub-wave length grating layer comprises the grating with specific pattern be fabricated from a silicon.
Preferably, the grating pattern of described sub-wave length grating layer is periodicity or non-periodic pattern.
Preferably, the grating of described periodic patterns is the spotted array grating equidistantly waiting the strip grating of the concentric ring grating of width or the parallel width such as equidistant or uniform round dot or rectangular dots to be formed; The grating of described non-periodic pattern is increase progressively and the concentric ring grating that width successively decreases or parallel increasing progressively from symmetry axis to periphery spacing and the strip grating that width successively decreases from the center of circle to periphery spacing.
Preferably, the screen periods in described sub-wave length grating layer is 200nm ~ 1.5 μm, and duty ratio is 20% ~ 80%; Grating reflection spectral is greater than 30%.
On the other hand, the present invention also provides the preparation method of the silica-based wide spectral integrated light detector of a kind of sub-wave length grating reflection enhancement type, and described method comprises step:
S1, etching forms SOI base sub-wave length grating on soi substrates;
S2, in iii-v substrate Epitaxial growth iii-v photo-detector structure;
S3, adopts bonding technology hybrid integrated iii-v photo-detector epitaxial structure and SOI base sub-wave length grating;
S4, prepares semiconductor photodetector.
Preferably, in step S1, SOI substrate is by bottom Si, SiO
2with top layer Si three-decker composition, preparing grating is in top layer Si.
Preferably, in step S2, utilize epitaxial growth equipment in InP substrate, grow InGaAs photo-detector.
Preferably, growth temperature remains on 650 DEG C.
Preferably, in step S3, described bonding technology comprises: Direct Bonding, SiO
2-SiO
2bonding, Au/In bonding, benzocyclobutene bonding chip and sol-gel bonding chip.
Preferably, when adopting benzocyclobutene Wafer Bonding Process, annealing temperature is 150 ~ 350 DEG C, and annealing time is 1 ~ 4 hour.
(3) beneficial effect
In the solution of the present invention, propose a kind of silica-based hybrid integrated photo-detector structure, solve the mutual restriction of conventional semiconductors photo-detector quantum efficiency and frequency response bandwidth, the field such as optical communication and optical signal prosessing can be widely used in, device have be easy to integrated, the feature such as wide spectral range high-quantum efficiency, high-frequency responsive bandwidth; Simultaneously related process have low cost, technique simple, be easy to the advantages such as realization.
Accompanying drawing explanation
Fig. 1 is sub-wave length grating reflection enhancement type of the present invention silica-based wide spectral integrated light detector schematic diagram;
Fig. 2 is the light path effect schematic diagram of photo-detector reflection enhancement of the present invention;
Fig. 3 is the periodic stripe grating pattern of sub-wave length grating layer in photo-detector of the present invention;
Fig. 4 is the cyclic array grating pattern of sub-wave length grating layer in photo-detector of the present invention;
Fig. 5 is the aperiodicity stripe grating pattern of sub-wave length grating layer in photo-detector of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of protection of the invention.
First, see Fig. 1, the silica-based wide spectral integrated light detector of sub-wave length grating reflection enhancement type of the present invention comprises the layer-of-substrate silicon 1, silicon oxide liner bottom 2, sub-wave length grating layer 3, resin bed 4, N-shaped epitaxial loayer 7, intrinsic layer 8, the p-type epitaxial layer 9 that are formed successively from the bottom to top, and the p-type contact electrode 6 being formed in N-shaped contact electrode on N-shaped epitaxial loayer 75 and being formed in p-type epitaxial layer 9.Wherein, described sub-wave length grating layer 3 comprises the grating with specific pattern be fabricated from a silicon.N-shaped epitaxial loayer 7, intrinsic layer 8, p-type epitaxial layer 9, N-shaped contact electrode 5 and p-type contact electrode 6 form extension photo-detector jointly, and its preferred structure is the light receiving element based on p-i-n junction structure, comprises the photovoltaic device such as photo-detector or solar cell.
With further reference to Fig. 2, by upper strata p-i-n junction structure photo-detector and lower floor SOI (Silicon-On-Insulator in the present invention, silicon in dielectric substrate) sub-wave length grating integrates, and because storeroom has larger refringence, (refractive index of Si is 3.5, SiO
2refractive index be 1.45), the nanoscale high index-contrast sub-wave length grating with CMOS technology compatibility can be obtained; Utilizing the wide spectral reflective character of sub-wave length grating further, making incident light 10 by being reflected by sub-wave length grating behind uptake zone, reverberation 11 by device uptake zone, realizes influx and translocation again, improves the quantum efficiency of device; Obtain the wide spectral response of the long wavelength of covering optical fiber communication, low loss window simultaneously.
Again see Fig. 3-5, the grating pattern of the sub-wave length grating layer in the present invention can be periodicity or acyclic pattern.Particularly, it is the example of periodic patterns in Fig. 3,4, the grating pattern of Fig. 3 (a) be equidistantly wait the concentric ring grating of width (spacing refer to space between two gratings span, width refers to the width of gratings strips, hereinafter implication is identical), the grating pattern of Fig. 3 (b) is the parallel equidistant strip grating waiting width; The grating pattern of Fig. 4 is uniform spotted array grating, and in Fig. 4 (a), the point of array is round dot, and in Fig. 4 (b), the point of array is rectangular dots.It is the example of non-periodic pattern in Fig. 5, the grating pattern of Fig. 5 (a) is increase progressively and the concentric ring grating that width successively decreases from the center of circle to periphery spacing, and the grating pattern of Fig. 5 (b) is parallel increasing progressively from symmetry axis to periphery spacing and the strip grating that width successively decreases.Preferably, screen periods (the i.e. grating pitch of the sub-wave length grating in the present invention, for above spacing and width sum) be 200nm ~ 1.5 μm, grating thickness is 100 ~ 800nm, and duty ratio (area of raster and whole grating region area ratio) is 20% ~ 80%; Sub-wave length grating reflectance spectrum is greater than 30%.
In the preparation process of above-mentioned photo-detector of the present invention, the main bonding technology that adopts realizes hybrid integrated opto-electronic device, particularly, silica-based sub-wave length grating and Group III-V semiconductor device is passed through bonding technology hybrid integrated.The complete preparation process of photo-detector device comprises:
First stage, etch sub-wave length grating on soi substrates;
Second stage, in iii-v substrate Epitaxial growth iii-v photo-detector structure;
Phase III, adopt bonding technology hybrid integrated iii-v photo-detector epitaxial structure and SOI base sub-wave length grating;
Fourth stage, prepares semiconductor photodetector.
Wherein, the phase III adopts bonding technology to realize hybrid integrated opto-electronic device, and bonding technology comprises Direct Bonding, SiO
2-SiO
2bonding, Au/In bonding, benzocyclobutene (BCB) bonding chip and sol-gel bonding chip etc. are in the interior method realizing silica-based grating and photo-detector hybrid integrated.When utilizing benzocyclobutene (BCB) Wafer Bonding Process to realize silica-based grating and photo-detector hybrid integrated, annealing temperature is 150 ~ 350 DEG C, and annealing time is 1 ~ 4 hour.
Below further with the periodic concentric ring grating in Fig. 3 (a), epitaxial growth InGaAs (indium GaAs, also InGaAsP is called as) photo-detector and be integrated into example by benzocyclobutene (BCB) Wafer Bonding Process, by the preparation method of the silica-based wide spectral integrated light detector of sub-wave length grating reflection enhancement type of the present invention is described, the method specifically comprises step:
The first step, preparation annular concentric SOI sub-wave length grating:
SOI substrate is by bottom Si, SiO
2with top layer Si three-decker composition, preparing grating in top layer Si, SiO
2thickness is 500nm, and the thickness of top layer Si is 500nm;
Design plane sub-wave length grating pattern, wherein regional diameter shared by concentric annular pattern (i.e. the outside diameter of outmost turns annulus) is 300 μm; Screen periods is 750nm, and duty ratio is 60%;
Adopt ZEP520 positive electronic corrosion-resistant as electron beam resist, utilize electron beam exposure apparatus on sample, make grating mask pattern;
Utilize ICP dry etching to make sub-wave length grating, grating thickness determines (500nm) by top layer Si thickness;
Finally, the ZEP520 positive electronic corrosion-resistant on sample is removed.
Second step, growth InGaAs (indium GaAs, is also called as InGaAsP) photo-detector epitaxial wafer:
Utilize epitaxial growth equipment, as MOCVD (Metal-organicChemicalVaporDeposition, metallo-organic compound chemical gaseous phase deposition) equipment or MBE (MolecularBeamEpitaxy, molecular beam epitaxy) equipment etc., at InP (indium phosphide) Grown InGaAs photo-detector;
Particularly, growth temperature remains on 650 DEG C, first 1 μm of InP resilient coating is grown, then grow 200nmInGaAsp type contact layer, 240nmInP etching stop layer, 350nmInGaAs absorbed layer, 450nmInP space layer, 40nmInGaAs etching stop layer, 200nmInPn type contact layer, 50nmInGaAs etching stop layer successively, finally grow 200nmInP resilient coating.
3rd step, by SOI base sub-wave length grating and photo-detector epitaxial structure integrated:
InGaAs photo-detector epitaxial wafer is cleaved into the extension sample that area is about 1cm2;
By deionized water, alcohol, acetone, extension sample and SOI base sub-wave length grating are cleaned;
Sol evenning machine is utilized evenly to apply one deck 1 μm of thick benzocyclobutene (BCB) resin on SOI base sub-wave length grating;
Utilize fixture SOI base sub-wave length grating and extension sample to be fixed, together put into annealing furnace, annealing furnace temperature rises to 250 DEG C, Temperature fall after 2 hours, and sample bonding completes.
4th step, the silica-based wide spectral integrated light detector preparation of sub-wave length grating reflection enhancement type:
By deionized water, alcohol, acetone, integrated sample is cleaned;
Device end-process process mainly comprises the following steps: first, through photoetching treatment, utilizes magnetic control sputtering system to produce the p-type contact electrode of Pt-Ti-Pt-Au.Light inlet aperture, center is 30 μm; And produce by photoetching and wet etching method the circular upper table surface structure of intrinsic layer 8 and p-type epitaxial layer 9 (namely in Fig. 1) that diameter is 42 μm, to the wet etching of InP and InGaAs material, employ HCl/H respectively
3pO
4(1: 1) corrosive liquid and H
2sO
4/ H
2o
2/ H
2o (1: 1: 2) corrosive liquid; Secondly, again produce N-shaped contact electrode through photoetching treatment and magnetron sputtering, and erode away the circular following table structure of N-shaped epitaxial loayer 7 (namely in Fig. 1) of diameter 62 μm; Then, device polyimides carries out passivation and (forms a passivation layer at device upper surface, this passivation layer not shown in Fig. 1), (each extraction electrode is electrically connected with each contact electrode by the perforate in passivation layer to utilize magnetron sputtering apparatus to make Ti-Au extraction electrode after perforate, external electric signal is conducted to each contact electrode, the connection of not shown extraction electrode in Fig. 1); Eventually pass polishing thinning, element manufacturing is complete.
The present invention successfully proposes a kind of silica-based hybrid integrated photo-detector structure, solve the mutual restriction of conventional semiconductors photo-detector quantum efficiency and frequency response bandwidth, the field such as optical communication and optical signal prosessing can be widely used in, the impact important on the integrated generation of opto-electronic device from now on.In the solution of the present invention, bonding technology is utilized to realize having silica-based sub-wave length grating and the iii-v photo-detector hybrid integrated of special pattern.The wide spectral reflective character of sub-wave length grating, make incident light by behind uptake zone by optical grating reflection again by device uptake zone, realize effectively absorbing increase, improve the quantum efficiency of device, and the spectral response range of device can cover the whole long wavelength's low loss window of optical fiber communication.Therefore, relative to prior art, the present invention has following clear superiority:
(1) be easy to integrated: realize iii-v p-i-n junction structure photo-detector by bonding method and SOI sub-wave length grating integrated; Device and preparation process cost is low, technique is simple, be easy to realize.
(2) grating performance is good: utilize SOI material to have the feature of larger refringence, obtains the sub-wave length grating with the nanoscale high index-contrast of CMOS technology compatibility.
(3) in wide spectral range, high-quantum efficiency is realized: the wide spectral reflective character utilizing sub-wave length grating, make incident light by being reflected again by device uptake zone by sub-wave length grating behind uptake zone, realize influx and translocation, improve the quantum efficiency of device.Obtain wide spectral response (being greater than 400nm) covering optical fiber communication long wavelength low loss window simultaneously.
Above execution mode is only for illustration of the present invention; and be not limitation of the present invention; the those of ordinary skill of relevant technical field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all equivalent technical schemes also belong to category of the present invention, and real protection scope of the present invention should be defined by the claims.
Claims (9)
1. the silica-based wide spectral integrated light detector of sub-wave length grating reflection enhancement type, it is characterized in that, described photo-detector comprises:
The layer-of-substrate silicon formed successively from the bottom to top, silicon oxide liner bottom, sub-wave length grating layer, resin bed, N-shaped epitaxial loayer, intrinsic layer, p-type epitaxial layer, and be formed in N-shaped contact electrode on N-shaped epitaxial loayer and be formed in the p-type contact electrode in p-type epitaxial layer;
Wherein, described sub-wave length grating layer comprises the grating with specific pattern be fabricated from a silicon.
2. photo-detector according to claim 1, is characterized in that, the grating pattern of described sub-wave length grating layer is periodicity or non-periodic pattern.
3. photo-detector according to claim 2, it is characterized in that, the grating of described periodic patterns is the spotted array grating equidistantly waiting the strip grating of the concentric ring grating of width or the parallel width such as equidistant or uniform round dot or rectangular dots to be formed; The grating of described non-periodic pattern is increase progressively and the concentric ring grating that width successively decreases or parallel increasing progressively from symmetry axis to periphery spacing and the strip grating that width successively decreases from the center of circle to periphery spacing.
4. photo-detector according to claim 1, is characterized in that, the screen periods in described sub-wave length grating layer is 200nm ~ 1.5 μm, and duty ratio is 20% ~ 80%; Grating reflection spectral is greater than 30%.
5. a preparation method for the silica-based wide spectral integrated light detector of sub-wave length grating reflection enhancement type, it is characterized in that, described method comprises step:
S1, etching forms SOI base sub-wave length grating on soi substrates;
S2, in III-V race's substrate Epitaxial growth III-V race photo-detector structure;
S3, adopts bonding technology hybrid integrated III-V race's photo-detector epitaxial structure and SOI base sub-wave length grating;
S4, has prepared semiconductor photodetector;
In step S1, SOI substrate is by bottom Si, SiO
2with top layer Si three-decker composition, preparing grating is in top layer Si.
6. method according to claim 5, is characterized in that, in step S2, utilizes epitaxial growth equipment, and InP substrate grows InGaAs photo-detector.
7. method according to claim 6, is characterized in that, growth temperature remains on 650 DEG C.
8. method according to claim 5, is characterized in that, in step S3, described bonding technology comprises: Direct Bonding, SiO
2-SiO
2bonding, Au/In bonding, benzocyclobutene bonding chip and sol-gel bonding chip.
9. method according to claim 8, is characterized in that, when adopting benzocyclobutene Wafer Bonding Process, annealing temperature is 150 ~ 350 DEG C, and annealing time is 1 ~ 4 hour.
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| US9360623B2 (en) * | 2013-12-20 | 2016-06-07 | The Regents Of The University Of California | Bonding of heterogeneous material grown on silicon to a silicon photonic circuit |
| CN105185862B (en) * | 2015-06-11 | 2017-03-01 | 北京邮电大学 | There is convergence and increase powerful mushroom-shaped high speed photodetector and preparation method thereof |
| CN106449806A (en) * | 2016-09-14 | 2017-02-22 | 北京邮电大学 | Narrow-linewidth and high-performance tunable optical detector based on non-periodic sub-wavelength grating |
| CN106684198B (en) * | 2016-11-28 | 2019-02-01 | 聊城大学 | Harmonic intensified ultraviolet light detector and preparation method based on sub-wave length grating |
| CN106784028B (en) * | 2016-12-29 | 2021-04-13 | 北京邮电大学 | Sub-wavelength beam splitting grating hybrid integrated photoelectric detector array |
| CN107170849B (en) * | 2017-05-04 | 2019-06-18 | 华中科技大学 | A kind of super surface texture of stripe shape polarizes related narrowband detector and its preparation and application |
| CN107389190A (en) * | 2017-07-28 | 2017-11-24 | 华东师范大学 | A kind of micro spectrometer single chip integrated on silicon wafer and preparation method thereof |
| CN111668324A (en) * | 2019-03-07 | 2020-09-15 | 苏州旭创科技有限公司 | Optical detector integrated with grating reflection structure |
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