CN104685627B - Processing flexibility glass substrate - Google Patents
Processing flexibility glass substrate Download PDFInfo
- Publication number
- CN104685627B CN104685627B CN201380041476.3A CN201380041476A CN104685627B CN 104685627 B CN104685627 B CN 104685627B CN 201380041476 A CN201380041476 A CN 201380041476A CN 104685627 B CN104685627 B CN 104685627B
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- China
- Prior art keywords
- glass substrate
- substrate
- bond layer
- flexible glass
- inorganic bond
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- 239000000758 substrate Substances 0.000 title claims abstract description 411
- 239000011521 glass Substances 0.000 title claims abstract description 255
- 238000012545 processing Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 96
- 230000008859 change Effects 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims description 63
- 229910052799 carbon Inorganic materials 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 20
- 238000002425 crystallisation Methods 0.000 claims description 19
- 230000008025 crystallization Effects 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000002241 glass-ceramic Substances 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 230000002829 reductive effect Effects 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims description 2
- 230000009467 reduction Effects 0.000 claims description 2
- 208000037656 Respiratory Sounds Diseases 0.000 claims 2
- 239000012790 adhesive layer Substances 0.000 description 138
- 239000010410 layer Substances 0.000 description 38
- 230000008569 process Effects 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- 230000008901 benefit Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000005365 phosphate glass Substances 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000002585 base Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000002679 ablation Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 230000032798 delamination Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000010008 shearing Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910019142 PO4 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011469 building brick Substances 0.000 description 3
- 238000010828 elution Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 238000007499 fusion processing Methods 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- DEPUMLCRMAUJIS-UHFFFAOYSA-N dicalcium;disodium;dioxido(oxo)silane Chemical compound [Na+].[Na+].[Ca+2].[Ca+2].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O DEPUMLCRMAUJIS-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 240000008042 Zea mays Species 0.000 description 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 239000006011 Zinc phosphide Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- SHLNMHIRQGRGOL-UHFFFAOYSA-N barium zinc Chemical compound [Zn].[Ba] SHLNMHIRQGRGOL-UHFFFAOYSA-N 0.000 description 1
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- YISOXLVRWFDIKD-UHFFFAOYSA-N bismuth;borate Chemical compound [Bi+3].[O-]B([O-])[O-] YISOXLVRWFDIKD-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 235000005822 corn Nutrition 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000003280 down draw process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- DWYMPOCYEZONEA-UHFFFAOYSA-L fluoridophosphate Chemical compound [O-]P([O-])(F)=O DWYMPOCYEZONEA-UHFFFAOYSA-L 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000006112 glass ceramic composition Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- HOKBIQDJCNTWST-UHFFFAOYSA-N phosphanylidenezinc;zinc Chemical compound [Zn].[Zn]=P.[Zn]=P HOKBIQDJCNTWST-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000003283 slot draw process Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000000699 topical effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- LRXTYHSAJDENHV-UHFFFAOYSA-H zinc phosphate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LRXTYHSAJDENHV-UHFFFAOYSA-H 0.000 description 1
- 229910000165 zinc phosphate Inorganic materials 0.000 description 1
- 229940048462 zinc phosphide Drugs 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/54—Yield strength; Tensile strength
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/542—Shear strength
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/702—Amorphous
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
- B32B2457/202—LCD, i.e. liquid crystal displays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Joining Of Glass To Other Materials (AREA)
- Laminated Bodies (AREA)
Abstract
Provide a kind of method of processing flexibility glass substrate.Methods described includes providing stack of substrates overlapping piece, and it is adhered to the flexible glass substrate of carrier substrate including the use of inorganic bond layer, and the inorganic bond layer is after energy input is received through going through structural change.Energy input is supplied to inorganic bond layer, for triggering structural change.Structural change reduces the bonding strength of inorganic bond layer, for flexible glass substrate to be separated from carrier substrate.
Description
The application requires the U.S. Provisional Application Serial No. 61/ that August in 2012 submits on the 22nd according to 35U.S.C. § 119
691904 priority, herein based on disclosure of which and by reference to it is intactly hereby incorporated by.
Technical field
The present invention relates to the apparatus and method for processing the thin substrate on carrier substrate, it particularly relates to
The thin substrate of flexible glass on carrier substrate.
Background
Now, flexible plastic film is frequently utilized for and PV, OLED, LCDs, touch sensor, flexible electronic and patterned film
In the related flexible electronic device of transistor (TFT) application.
Compared with flexiplast technology, flexible glass substrate provides multiple technologies advantage.A kind of technical advantage is glass energy
As moisture and barrier layer for gases, it is the principal degradation mechanism in OLED display, OLED illuminations and organic photovoltaic devices.The
Two technical advantages are that it packs substrate layers by reducing or eliminating one or more, and it is (thick potentially to reduce overall package size
Degree) and weight.The gas advantage of flexible glass substrate is included in optical transmittance, dimensional stability, thermal capacitance and surface quality side
The benefit in face.
Because electronic display industry needs thinner/flexible glass substrate (being less than 0.3 millimeters thick), panel manufacturers face
Face many challenges and adapt to thinner/flexible glass substrate to process.A kind of selection is to process thicker glass plate, then etches or throws
The light panel is to the thinner net thickness of totality.This makes it possible to be manufactured with the existing panel based on 0.3 millimeters thick or thicker substrate
Infrastructure, but fine grinding cost when adding process finishing and ground reduce yield.Second method be transform again it is existing
Panel process be used for thinner substrate.Glass loss in technique is main puzzlement, and needs substantial contribution by base
Refining losses in plate-p- plate technique of non-supported flexible glass substrate is preferably minimized.The third method be using volume-
P- volume technology is used for thin flexible glass substrate based on the technology that roller is processed.
This area is it is desirable that a kind of carrier method, and it is using manufacturer based on 0.3 millimeter or thicker of rigid substrate
Existing fund infrastructure, and make it possible to process thin, the flexible glass substrate i.e. thickness of glass no more than about 0.3 millimeter
It is thick.
General introduction
Idea of the invention is directed to use with inorganic bond layer and thin plate such as flexible glass substrate is adhered into carrier substrate,
The inorganic bond layer changes structure after energy input such as heat energy is received.The bonding that structural change reduces inorganic bond layer is strong
Degree, for flexible glass substrate to be separated from carrier substrate.
One of commercial advantages of method of the present invention are that manufacturer existing can be provided using them in process equipment
Gold input, while obtain and be used for such as PV, OLED, LCDs, touch sensor, flexible electronic and patterned film transistor
(TFT) benefit of the thin glass plate of electronics.
According in a first aspect, a kind of method of processing flexibility glass substrate includes：
Stack of substrates overlapping piece is provided, it is adhered to the flexible glass substrate of carrier substrate including the use of inorganic bond layer, the nothing
Machine adhesive layer recurring structure after energy input is received changes；And
It is supplied to inorganic bond layer to be used to trigger structural change energy input, this structural change reduces inorganic bond layer
Bonding strength, for by flexible glass substrate from carrier substrate separate.
According to second aspect, there is provided the method described in first aspect, wherein the energy input is heat energy, methods described
Temperature including the jointing material to be heated to at least about 250 DEG C.
According to the third aspect, there is provided the method described in first or second aspect, wherein the energy input is luminous energy, its
Cause the jointing material being heated at least about 250 DEG C of temperature.
According to fourth aspect, there is provided the method as any one of first to the third aspect, wherein the inorganic bond
Layer includes the inorganic bonding material set along the periphery of flexible glass substrate.
According to the 5th aspect, there is provided the method as any one of first to fourth aspect, wherein using laser general ability
Heat the inorganic bond layer in portion.
According to the 6th aspect, there is provided the method as any one of in terms of first to the 5th, wherein the structural change
Including crystallization.
According to the 7th aspect, there is provided the method as any one of in terms of first to the 6th, wherein the structural change
Porosity including increasing the inorganic bond layer.
According to eighth aspect, there is provided the method as any one of in terms of first to the 7th, wherein the structural change
Microfissure including increasing the inorganic bond layer.
According to the 9th aspect, there is provided the method as any one of first to eighth aspect, be additionally included in energy is defeated
After entering to be supplied to the inorganic bond layer, flexible glass substrate is removed from carrier substrate.
According to the tenth aspect, there is provided the method as any one of in terms of first to the 9th, in addition to by electric component
It is applied to flexible glass substrate.
According to the tenth on the one hand, there is provided the method as any one of in terms of first to the tenth, wherein the flexible glass
The thickness of glass substrate is not greater than about 0.3 millimeter.
According to the 12nd aspect, there is provided such as the method any one of the first to the tenth one side, wherein the carrier
Substrate includes glass.
According to the 13rd aspect, there is provided the method as any one of in terms of first to the 12nd, wherein the bonding
Material includes the one or more in glass, glass ceramics and ceramics.
According to fourteenth aspect, there is provided the method as any one of in terms of first to the 13rd, wherein the bonding
Material includes carbon.
According to the 15th aspect, there is provided the method as any one of first to fourteenth aspect, wherein the bonding
Material includes silicon.
According to the 16th aspect, there is provided as first to the 15th aspect any one of method, including ought change institute
When stating the structure of jointing material, at least part of debindered flexible glass substrate and carrier substrate.
According to the 17th aspect, there is provided the method as any one of in terms of first to the 16th, wherein the energy
Input is heat energy, and methods described is including the jointing material to be heated to at least about 250 DEG C of temperature without reducing bonding
Intensity.
According to the 18th aspect, there is provided the method as any one of in terms of first to the 17th, wherein the energy
Input is luminous energy, and methods described is including the jointing material to be heated to at least about 250 DEG C of temperature without reducing bonding
Intensity.
According to the 19th aspect, a kind of method of processing flexibility glass substrate includes：
Carrier substrate with glass support surface is provided；
Flexible glass substrate is provided, it has the first and second wide surfaces；
Using inorganic bond layer, by the glass support table of the first of flexible glass substrate the wide surface bonding to carrier substrate
Face；With
The bonding for changing the structure of inorganic bond layer and reducing between the flexible glass substrate and the carrier substrate is strong
Degree, for flexible glass substrate to be removed from carrier substrate.
According to the 20th aspect, there is provided the method as described in terms of the 19th, including energy input is supplied to inorganic glue
Layer is closed, it is strong for changing the structure of inorganic bond layer and reducing bonding between the flexible glass substrate and carrier substrate
Degree.
According to the 20th on the one hand, there is provided the method described in the 20th aspect, wherein the energy input is heat energy, institute
State the temperature that method includes for the jointing material being heated at least about 250 DEG C.
According to the 22nd aspect, there is provided the method any one of the 20th or 20 one side, wherein described
Energy input is luminous energy, and methods described includes the temperature that the jointing material is heated to at least about 250 DEG C.
According to the 23rd aspect, there is provided the method as any one of in terms of the 19 to the 22nd, wherein making
The inorganic bond layer described in laser local heating.
According to twenty-fourth aspect, there is provided the method as any one of in terms of the 19 to the 23rd, wherein making
The inorganic bond layer described in flash lamp local heating.
According to the 25th aspect, there is provided such as the method any one of the 19th to twenty-fourth aspect, wherein institute
The thickness for stating flexible glass substrate is not greater than about 0.3 millimeter.
According to the 26th aspect, a kind of stack of substrates overlapping piece includes：
Carrier substrate with glass support surface；
Flexible glass substrate, it is supported by the glass support surface of the carrier substrate；With
Inorganic bond layer, the flexible glass substrate is adhered to the carrier substrate by it, and the inorganic bond layer includes
Jointing material, the jointing material changes structure and reduces the bonding strength between flexible glass substrate and carrier substrate, for inciting somebody to action
Flexible glass substrate removes from carrier substrate.
According to the 27th aspect, there is provided the stack of substrates overlapping piece described in the 26th aspect, wherein the jointing material bag
Include carbon.
According to twenty-eighth aspect, there is provided as any one of in terms of the 26th or 27 it is reported that wherein
The jointing material includes silicon.
According to the 29th aspect, there is provided the stack of substrates overlapping piece described in the 26th aspect, wherein the jointing material bag
Include at least one of glass, glass ceramics and ceramics.
According to the 30th aspect, there is provided the stack of substrates overlapping piece described in the 26th aspect, wherein the jointing material includes
Amorphous silicon.
According to the 30th on the one hand, there is provided the stack of substrates overlapping piece as any one of in terms of the 26 to the 30th,
Wherein described structural change includes crystallization.
According to the 32nd aspect, there is provided such as the substrate stack any one of the 26th to the 30th one side
Part, wherein the thickness of the flexible glass substrate is not greater than about 0.3 millimeter.
The supplementary features and advantage of the present invention, Partial Feature and advantage pair therein are proposed in the following detailed description
It is readily appreciated that for those skilled in the art by the content, or by the citing implementation in word description and accompanying drawing and institute
Attached claim defines and recognizes the present invention.It should be understood that foregoing general description and the following detailed description are all pair
The example of the present invention, understands the property of claimed invention and the overview of characteristic or framework for providing.
Including accompanying drawing provide the principle of the invention further understood, accompanying drawing is incorporated in the present specification and formed
Part for specification.Accompanying drawing illustrates one or more embodiments of the present invention, and for using together with specification
Bright principle of the invention and operation.It should be understood that the various features of the invention disclosed in the present description and drawings can be with
It is applied in combination with any and all.
Brief description of the drawings
Fig. 1 is a kind of side view of embodiment of stack of substrates overlapping piece, and the stack of substrates overlapping piece includes being carried with carrier substrate
Flexible glass substrate；
Fig. 2 is the decomposition diagram of the stack of substrates overlapping piece described in Fig. 1；
Fig. 3 shows the embodiment of a kind of method of the flexible glass substrate and stack of substrates overlapping piece shown in manuscript 1；
Fig. 4 is the top view of the embodiment of stack of substrates overlapping piece, and the stack of substrates overlapping piece includes flexible glass substrate and had
Different size of carrier substrate；
Fig. 5 is the top view of the another embodiment of stack of substrates overlapping piece, and the stack of substrates overlapping piece includes flexible glass substrate
With with different size of carrier substrate；
Fig. 6 is the top view of the embodiment of stack of substrates overlapping piece, and the stack of substrates overlapping piece includes the glass for being applied to carrier surface
Adhesive layer on glass support surface；
Fig. 7 is the top view of the another embodiment of stack of substrates overlapping piece, and the stack of substrates overlapping piece includes being applied to carrier table
Adhesive layer on the glass support surface in face；
Fig. 8 is the top view of the another embodiment of stack of substrates overlapping piece, and the stack of substrates overlapping piece includes being applied to carrier table
Adhesive layer on the glass support surface in face；
Fig. 9 shows the X ray diffracting data of room temperature lower bonding layer；
Figure 10 shows X ray diffracting data of the adhesive layer at 180 DEG C shown in Fig. 9；
Figure 11 shows X ray diffracting data of the adhesive layer at 250 DEG C shown in Fig. 9, shows that adhesive layer crystallinity increases
Add；
Figure 12 shows the absorbance of carbon-based adhesive layer；
Figure 13 shows a kind of embodiment of the method for stack of substrates overlapping piece of the processing with amorphous silicon adhesive layer；
Figure 14 A show the process for applying heat energy to adhesive layer by flexible glass substrate；
Figure 14 B show the process for applying heat energy to adhesive layer by carrier substrate；
Figure 15 shows the another embodiment of the method for stack of substrates overlapping piece of the processing with amorphous silicon adhesive layer；
Figure 16 shows the another embodiment of the method for stack of substrates overlapping piece of the processing with amorphous silicon adhesive layer；
Figure 17 is the top view of the embodiment of stack of substrates overlapping piece, and the stack of substrates overlapping piece includes the glass for being applied to carrier surface
Adhesive layer on glass support surface；
Figure 18 is the top view for forming the embodiment of the stack of substrates overlapping piece of multiple required parts；With
Figure 19 shows the embodiment of the method from carrier substrate release flexible glass substrate.
Detailed description of the invention
Embodiment as described herein relates in general to processing flexibility glass substrate, is otherwise referred to as equipment base herein
Piece.Flexible glass substrate can be a part for stack of substrates overlapping piece, and the stack of substrates overlapping piece generally includes carrier substrate and glued with inorganic
Close layer and be connected to its flexible glass substrate.As used herein, term " inorganic material " refer to be not hydrocarbon or derivatives thereof change
Compound.Following article institute is described in more detail, and when receiving energy input, adhesive layer undergoes structure change.When adhesive layer receives energy
During amount input, the structural change reduces or otherwise changed the bonding strength of adhesive layer so that before energy input
Compare, it is easier to separate flexible glass substrate from carrier substrate.
With reference to Fig. 1 and 2, stack of substrates overlapping piece 10 includes carrier substrate 12 and flexible glass substrate 20.Carrier substrate 12 has
Glass support surface 14, relative support surface 16 and circumference 18.Flexible glass substrate 20 has the first wide surface 22, relative
Second wide surface 24 and circumference 26.Flexible glass substrate 20 can be " ultra-thin ", its thickness 28 be about 0.3mm or smaller including but
It is not limited to following thickness：Such as about 0.01-0.05mm, about 0.05-0.1mm, about about 0.1-0.15mm and 0.15-0.3mm.
Flexible glass substrate 20 is adhered to the glass branch of carrier substrate 12 at its first wide surface 22 using adhesive layer 30
Support surface 14.Adhesive layer can be inorganic bond layer, and it includes inorganic bonding material.When carrier substrate 12 and flexible glass substrate 20
When mutually being bonded with adhesive layer 30, the combination thickness 25 of stack of substrates overlapping piece 10 can be equal to and the single phase of flexible glass substrate 20
Than the single glass substrate with increase thickness, it may be adapted to using existing equipment processing infrastructure.Such as if equipment
The process equipment of processing infrastructure is designed for 0.7 millimeter of plate, and the thickness 28 of flexible glass substrate 20 is 0.3mm, then
The thickness 32 of carrier substrate 12 can be chosen to be to some thickness no more than 0.4 millimeter, such as the thickness depending on adhesive layer 30.
Carrier substrate 12 can be that any appropriate material include such as glass, glass ceramics or ceramics, and can be transparent or
Person is opaque.If being made up of glass, carrier substrate 12 can be any appropriate composition include aluminosilicate, borosilicate,
Aluminoborosilicate, sodium-calcium-silicate, and depending on its final application may include or do not include alkali metal.The thickness of carrier substrate 12
Degree 32 can be about 0.2-3mm, such as 0.2,0.3,0.4,0.5,0.6,0.65,0.7,1.0,2.0, or 3mm, and may depend on soft
The thickness 28 of property glass substrate 20, as described above.In addition, carrier substrate 12 can be made (as shown in the figure) by one layer, or can be by
It is bonded together and is made with forming the multilayer of a part for stack of substrates overlapping piece 10 (including multiple thin plates).
Flexible glass substrate 20 can be formed by any appropriate material, including such as glass, glass ceramics or ceramics, and can
To be transparent or opaque.If being made up of glass, flexible glass substrate 20 can be that any appropriate composition includes manosil AS
Salt, borosilicate, aluminoborosilicate, sodium-calcium-silicate, and depending on its final application may include or do not include alkali metal.It is soft
The thickness 28 of property glass substrate 20 can be about 0.3mm or smaller, e.g., from about 0.2mm or smaller, e.g., from about 0.1mm, as described above.
As described herein, the size of flexible glass substrate 20 and/or size can it is identical with the size and/or size of carrier substrate 12 or
It is different.
With reference to figure 3, an a kind of part of releasable adhesive bonding method 40 as processing flexibility glass substrate 20 is shown.
In step 42, carrier substrate 12 and flexible glass are selected based on such as their size, thickness, material and/or final application
Substrate 20.Once have selected carrier substrate 12 and flexible glass substrate 20, adhesive layer 30 can be applied to glass branch in step 44
Support one or both of 20 first wide surface 22 of surface 14 and flexible glass substrate.Any suitable method can be used to apply
Adhesive layer 30, such as one or more of pressurized applications, for example, by nozzle, sprawl, melt, spin coating is cast, spraying, leaching
Stain, vacuum or aerial sediment etc..
In step 46, using adhesive layer 30, flexible glass substrate 20 is adhered to or is otherwise adhered to carrier substrate
12., can be to forming adhesive layer 30 in order to obtain the bonding strength between required flexible glass substrate 20 and carrier substrate 12
Jointing material is heated, cooled down, being mixed with other materials, induced reaction, application pressure.As used herein, term " bonding
Intensity " refers to following one or more：Dynamic shear strength, dynamic peel strength, Static Shear Strength, static peel strength
And combinations thereof.For example, in separation mode, peel strength is should by be applied to flexible glass substrate and/or carrier substrate
Power is come the power of unit width necessary to triggering failure (static state) and/or the special failure rate (dynamic) of maintenance.In shearing mould
In formula, shear strength be by be applied to the stress of flexible glass substrate and/or carrier substrate trigger failure (static state) and/or
The power of unit width necessary to maintaining special failure rate (dynamic).It is strong that any suitable method can be adopted to measure bonding
Degree, including it is any it is suitable peel off and/or shear strength test because the change of bonding strength is to gluing by required energy input
Close the front and rear contrast for surveying bonding strength of layer 30.
Step 48 and 50 is related to and discharged from substrate 12 or debindered flexible glass substrate 20, so as to by carrier flexible glass
Substrate 20 removes from carrier substrate 12., can before or after carrier flexible glass substrate 20 is removed from carrier substrate 12
For example forming display device (such as LCD, OLED or TFT electronics or other electronic equipments such as touch sensor or photovoltaic device)
When processing flexibility glass substrate 20.Such as can be able to be applied to flexible glass substrate 20 second by electronic building brick or filter
Wide surface 24 (Fig. 1 and 2).In addition, can be before flexible glass substrate 20 be discharged from carrier substrate 12, by electronic building brick with being somebody's turn to do
Flexible glass substrate 20 is assembled or combined.Such as extra film or glass substrate can be laminated to the table of flexible glass substrate 20
Face, or electronic building brick such as flexible circuit or IC can be bonded.Once machined flexible glass substrate, energy input 47 can be applied
To adhesive layer 30, this changes the structure of adhesive layer 30 in step 48.As described below, this structural change reduces the viscous of adhesive layer 30
Intensity is closed, to promote to separate flexible glass substrate 20 from carrier substrate 12, compared with before the energy input in step 48.
Step 50, flexible glass substrate 20 is removed from carrier substrate 12.Can be for example, by peeling off flexible glass base from carrier substrate 12
Piece 20 or one part realize this extraction.By with angled with the plane P extended by adhesive layer 30, by power F
One or two substrate is applied to, to be peeling power.
Carrier substrate and the selection of flexible glass band
Carrier substrate 12 and flexible glass substrate 20 can be formed by identical, similar or different material.In some embodiment party
In formula, carrier substrate 12 and flexible glass substrate 20 are formed by glass, glass ceramics or ceramic material.Carrier substrate 12 and flexibility
Glass substrate 20 can be formed by identical, similar or different manufacturing process.For example, fusion process (such as glass tube down-drawing) formation is high-quality
Thin glass plate is measured, it can be used for various equipment such as flat-panel monitor.When using different materials, it may be necessary to match thermal expansion
Coefficient value.When being compared with the glass plate prepared by other methods, the surface of the glass plate prepared in fusion process has excellent
Flatness and smoothness.This fusion process is referring to U.S. Patent number 3,338,696 and 3,682,609.Other suitable glass plates
Forming method includes float glass process, again drawing process and slot draw.Flexible glass substrate 20 (and/or carrier substrate 12) can also be
Include temporary transient or permanent protective coating or other classes in one or two in its first and second wide surfaces 22 and 24
Coating.
One or more of size and/or shapes of carrier substrate 12 and flexible glass substrate 20 be about it is identical and/or
It is different.For example, referring briefly to Fig. 4, carrier substrate 12 be shown as having with the identical shape of flexible glass substrate 20, but it is a kind of
Or more kind size be more than flexible glass substrate 20.This arrangement allows the perimeter region 52 of carrier substrate 12 to extend outwardly beyond
Flexible glass substrate 20, around the circumference 26 of whole or at least one of flexible glass substrate 20.As another example, Fig. 5
Show a kind of embodiment, the wherein shape of flexible glass substrate 20, size is different from carrier substrate 12.This arrangement can be only
The part 54 of the circumference 18 of carrier substrate 12 is allowed to extend outwardly through the circumference 26 of flexible glass substrate 20.Although show length
It is square and round-shaped, depending on required stack construction, it any suitable shape can be used to include irregular shape.This
Outside, the edge of carrier substrate 12 can carry out sphering, fine grinding (finished) and/or grinding to tolerate impact and promote to process.Also
Surface characteristics such as groove and/or hole can be provided on carrier substrate 12.Groove, hole and/or other surface characteristics can promote and/
Or suppress jointing material localization and/or adhesion.
The selection and application of adhesive layer
Adhesive layer 30 may include one or more of jointing materials, and it undergoes structure change when receiving energy input.Example
Such as, adhesive layer 30 may include inorganic material, and may include material such as glass, glass ceramics, ceramics and carbonaceous material.At some
In embodiment, adhesive layer 30 can be made up of the carbon for forming carbon adhesive layer.In some embodiments, adhesive layer 30 can be by forming
The silicon composition of si adhesion layer.Various Exemplary adhesive materials are as described below.Any suitable method can be used to apply adhesive layer
30, such as one or more of pressurized applications, for example, by nozzle, sprawl, melt, spin coating is cast, spraying, dipping, vacuum
Or aerial sediment etc..
Adhesive layer 30 can be applied with any appropriate pattern and/or shape.With reference to figure 6, adhesive layer 30 is applied to glass
The region A of glass support surface 141On, it is at least about 50% area A covered by flexible glass substrate 202, such as substantially
All region A2.In some embodiments, A1It may be less than about 50% A2, such as the A no more than about 25%2.Adhesive layer
30 can extend over the periphery of flexible glass substrate 20, or adhesive layer 30 may be housed in flexible glass substrate 20 periphery it
It is interior.With reference to figure 7, adhesive layer 30 can be along predefined paths such as region A3It is continuous to apply, region A3Around A2Circumference extension
(that is, continuous periphery bonding), leaves the unbonded region R connected with adhesive layer 30.With reference to figure 8, adhesive layer 30 can be by mutual
The discrete bonding fragment 60 separated is formed.In the embodiment shown in Fig. 8, discrete bonding fragment is the shape of single lines
Formula.Any other suitable shape, such as circle, point, random shapes and variously-shaped combination can be used.
Change the structure of adhesive layer
Energy input is supplied to adhesive layer 30, it changes or for changing the structure of adhesive layer 30.This structural change
The bonding strength of adhesive layer 30 is reduced, compared with before energy input, to promote to separate flexible glass substrate from carrier substrate 12
20.Can be by reducing adhesive layer 30 adhesion strength of itself, and/or adhesive layer 30 and/or flexible glass substrate 20 and carrier base
Adhesion strength between piece 12, to reduce bonding strength.The species of energy input, depend, at least partially, on institute in adhesive layer 30
Jointing material.It is provided below for providing the jointing material of adhesive layer 30 and the non-limitative example of input energy, but nothing
It is intended to limit.These initial embodiments show that adhesive layer 30 crystallizes with input energy, and it reduce the bonding of adhesive layer 30
Intensity.This reduction of bonding strength promotes to separate flexible glass substrate 20 from carrier substrate 12, without damaging flexible glass base
Piece 20.
Embodiment 1
Firebrake ZB bismuth (BZB) glass is formed, and is ground to the particle mean size less than 20 microns.BZB glass particles pass through 350
Eye mesh screen, and mixed in ribbon mixer at 100 DEG C with 75 weight % with adhesive.With pipette by the slurry of thermal heat
Material is assigned on carrier substrate, and adhesive layer is formed on carrier substrate using scraper (doctor blade).For assessment
Purpose, the thickness of adhesive layer is formed as about 25 μm, 75 μm and 125 μm.To be formed by using smaller glass particle size or pass through
The deposition process of adhesive layer, smaller thickness can be obtained.After adhesive layer is formed, it undergoes following heating curves：
A. room temperature is to 200 DEG C, 5 DEG C/min.
B.200 DEG C holding 1 hour, burns up adhesive.
C.200 DEG C -400 DEG C, 5 DEG C/min.
D.400 DEG C holding 1 hour.
E. cool down.
X-ray diffraction show bismuth oxide, bismuth borate, zinc oxide and boron oxide adhesive layer crystallization, be at least in part because
For the heat heating of BZB glass particles and granularity.This crystallization reduces the bonding strength provided by adhesive layer.
Embodiment 2
By grinding and by 325 eye mesh screens, phosphate glass powder is prepared.Then by phosphate glass powder with 83 weights
Amount % mixes with C18 adhesives.Using scraper by the slurry application of heating to substrate, about 25 microns and 75 microns of assessment is prepared
Thickness.By using smaller glass particle size or the deposition process by forming adhesive layer, smaller thickness can be obtained.Formed
After adhesive layer, it undergoes following heating curves：
A. room temperature is to 200 DEG C, 1 DEG C/min.
B.200 DEG C holding 1 hour.
C.200-400 DEG C, 1 DEG C/min.
D.400 DEG C holding 1 hour.
E. cool down.
X-ray diffraction shows the adhesive layer crystallization of barium monoxide, trbasic zinc phosphate, zinc phosphide, zinc oxide and phosphatization barium zinc, at least portion
Ground is divided to be because the heat heating of phosphate glass particle and granularity.This crystallization reduces the bonding strength provided by adhesive layer.
Embodiment 3
Fritter fluorophosphate tin sheet glass is placed in two piecesBoard (the not aluminoborosilicate glass of alkali metal containing
Glass) for thickness between 0.7 millimeter of substrate, it can be from the Corning Corp. (Corning Incorporated) in healthy and free from worry New York
Purchase.Stack is placed in baking oven, and there is counterweight (weight) to provide bonding force at top.It is bent using 6 kinds of different heat
Line determines the temporary adhesion of substrate and debindered.All calorifics heatings to higher temperature are all entered with 5 DEG C/min of speed
OK.
1. stack is heated to 150 DEG C of maximum temperature.Phosphate glass melting is not observed or bonds visible
Sign.
2. stack is heated to 160 DEG C of maximum temperature.Phosphate glass melting is not observed or bonds visible
Sign.
3. stack is heated to 170 DEG C of maximum temperature.- phosphate glass-Bonding is observed between substrate, but does not crystallize sign in adhesive layer significantly.
4. stack is heated to 200 DEG C of maximum temperature.Possible crystallization sign is observed in adhesive layer.
5. stack is heated to 180 DEG C of maximum temperature,- phosphate glass-Bonding is observed between substrate, but does not have visible crystallization sign in adhesive layer.Then stack is heated
To 400 DEG C of maximum temperature, observe that crystallization sign, and the mechanical performance of adhesive layer and density change in whole adhesive layer
Become.
6. stack is heated to 180 DEG C of maximum temperature,- phosphate glass-Bonding is observed between substrate, but does not have visible crystallization sign in adhesive layer.Then stack is heated
To 250 DEG C of maximum temperature, it was observed that crystallizing sign, but the crystallization for being less than and being observed at 400 DEG C is crystallized.Then separateSubstrate.
Above-described embodiment shows that the adhesive layer of inorganic material can be used to be bonded together for glass substrate.In possible manufacture step
After rapid, adhesive layer can be heated to the temperature of even more high, to induce the crystallization and/or other structures change in adhesive layer.
, can be with the power before changing less than recurring structure in adhesive layer come separation of glasses substrate because this structural change.
Fig. 9,10 and 11 show crystallinity of the adhesive layer 30 of embodiment 3 under higher temperature exposure.Fig. 9 shows firm shape
Into phosphate glass adhesive layer, Figure 10 is shown in the phosphate glass adhesive layer at 180 DEG C, and Figure 11 is shown at 250 DEG C
Phosphate glass adhesive layer.Compare Fig. 9 and 10, can be observed to exist in newly formed and phosphate glass at 180 DEG C few
The crystallization of amount.Figure 11 shows the crystallization that much higher content in the phosphate glass at 250 DEG C be present, it reduce bonding strength,
Improve the delamination of flexible glass substrate when applying separating force.This shows that two pieces of substrates can be bonded together, and in thermal process
Survive., can be debindered from substrate 12 by flexible glass substrate 30 when adhesive layer 30 crystallizes.
It is noted that for specific equipment Manufacture Process used, the optimization of jointing material should be carried out.Such as a-Si
Or p-Si TFT processes, it is about 250 DEG C or higher that it, which manufactures temperature, e.g., from about 350 DEG C or higher, e.g., from about 250 DEG C-about 600
DEG C, the debindered heat exposure of jointing material can be chosen to be to 250 DEG C or higher, such as 350 DEG C or higher, such as 600 DEG C or more
Height, to reduce unexpected debindered any possibility.But manufacturing equipment or the heat exposure of other components should be selected
For less than the heat exposure that may damage any device electronics or other components.In some embodiments, target is reached
During debindered heat exposure, the bonding strength of adhesive layer 30 can be substantially absent from or in the presence of it is a small amount of (for example, less than about 50%,
For example, less than about 25%, for example, less than about 10%, for example, less than about 5%, for example, less than about 1%) reduce.Therefore, can be according to not
With device fabrication situation optimize debindered material.In addition, the application of energy 47 can be concentrated on to adhesive layer 30 itself.Example
Such as, energy source can be optimized, so as to which adhesive layer 30 absorbs most energy 47, this causes in flexible glass substrate 20, carrier base
There is lower fuel factor in piece 12 or any mechanical floor in flexible glass substrate 20.
Embodiment 4
For the present embodiment, 80 moles of %SnO and 20 mole of %P have been used2O5Glass binding material composition.Will be a piece of
This glass is placed in two pieces of EAGLE(the not aluminium borosilicate glass of alkali metal containing, can be from the healthy and free from worry limited public affairs in healthy and free from worry New York
Take charge of (Corning Incorporated) purchase) before sample, it is 5cm x 5cm.Then, various samples experience heat is followed
Ring, what is adhered to EAGLE at a temperature of to determine glassAnd what ABR glass crystallize at a temperature of.
Tested as first time, by EAGLEIt is placed in the stack of jointing material in stove, its top has 375
Gram counterweight.Stove is heated to 320 DEG C with 5 DEG C/min of speed, is kept for 1 hour, then cooled down.It was observed that jointing material
Melt and be adhered to EAGLESubstrate.Jointing material is still optically transparent.But jointing material is adhered only to two pieces
EAGLEOn one piece in substrate, it may be possible to because the mismatch of thermal expansion.For the implementation of reality, bonding material can adjust
The CTE of material matches display glass substrate.
As second experiment, the sample stack of above-described embodiment is configured similarly to, then undergoes and is up to 350 DEG C
Thermal cycle.This causes jointing material to crystallize, and becomes optical scattering.In this case, jointing material within itself just not
It can adhere, EAGLE can be easily separatedGlass.
Show that inorganic bond can be adhered to display glass using these experiments of jointing material, then cause higher
At a temperature of crystallize.A kind of exemplary scene portentous can be：
A. at a temperature of higher than structure equipment, display glass substrate is adhered to processing carrier.(320 DEG C, such as)；
B. (320 DEG C of ＜) builds display device at a temperature of less than tack temperature；
C. jointing material is crystallized, reduces the adhesion between substrate glass and carrier.For example, this can be higher than tack temperature
At a temperature of carry out (350 DEG C, such as).If the equipment of manufacture can not survive at this temperature, the laser of localization can be used
Exposed or other glass for absorbing energy and carrying out differentiation heating bonding；With
D. separated from processing carrier and show glass substrate.
Embodiment 5
SiO is formed using hydrogen silsesquioxane solution such as Fox-25 (being bought from DOW CORNING (Dow-Corning))2
Adhesive layer.In order to manufacture stack, step includes following：
A. 5cm x 5cm are used as glass carrier substrateThickness is 0.7mm.
B. hydrogen silsesquioxane solution spin coating is cast on carrier substrate, speed be the 300rpm times be 15 seconds, with shape
Into adhesive layer.For fairly large application, other liquid distribution and film build method can be used.
C. before dry adhesion layer, equipment substrate is applied to adhesive layer.The construction of equipment substrate and carrier substrate
It is identical.
D. at room temperature, stack is placed in thermal station, its top has weight agate to provide 100kPa maximum bonding pressure
Power.
E. thermal station is heated to 175 DEG C and kept for 5-15 minutes, be then heated to 250 DEG C of holding 5-15.
F. thermal station is cooled to 175 DEG C and kept for 5 minutes.It was observed that bonding strength is by the initial heat for driving away solvent
Circulation significantly affects.
The method of embodiment 5 can build high shear strength bonding between carrier substrate and equipment substrate.It was observed that compared with
Be difficult to by carrier substrate and equipment substrate each on using two panels adhesive tape apply shearing force, from carrier substrate separation equipment
Substrate.But it is easier from carrier substrate separation equipment substrate by applying peeling force.By the way that adhesive layer is heated to surpass
350 DEG C are crossed, can also realize further reduces intensity.
The change of adhesive structure can cause the change in addition to crystallization, such as the stereomutation of induction jointing material,
Induce the density of jointing material to change, induce the microfissure within adhesive layer, induce the adhesion of jointing material to fail and increase
The etch selectivity of jointing material.Although one or more of above-mentioned jointing materials show adhesive layer crystallization and/or its
It, which is crystallized, changes, but other materials can be used to form adhesive layer.For example, carbon containing adhesive layer can be used, releasedly to glue
Close flexible glass substrate and carrier substrate.
Embodiment 6
Carbon containing adhesive layer is formed by phenol resin solution.This process has used P-F copolymer, and uses spin coating
Casting and curing process construct sample.Procedure of processing includes：
A. the phenol resin solution spin coating of the dilution of 70 weight % resins and 30 weight % deionized waters is cast to carrier
On substrate, speed be the 3krpm times be 30 seconds, obtain the adhesive layer no more than 10 micron thickness.
B. at room temperature, the carrier substrate with adhesive layer and equipment substrate placed on it is placed in thermal station.Apply
Weight agate, it produces the maximum loading pressure more than 100kPa.
C. thermal station is heated to 150 DEG C, and kept for about 10 minutes, be then cooled back to room temperature.
D. stack is circulated to 400 DEG C under air in a furnace, kept for 1 hour, then cooled down.
Using this process, equipment substrate is adhered to the carrier substrate survived in shearing drawing test, shelled when applying
Separated during from power, this is because the carbon adhesive layer that heating leaves afterwards is formed with when heating in adhesive layer at least in part
Increased porosity.Equipment substrate and carrier substrate all by(8cm x 12cm) substrate and thickness are 0.7mm
Formed.
Other filler tests are carried out to preparing the stack formed according to embodiment 6.By stack in 500 DEG C of stove
Circulated 1 hour under air, this causes severe oxidation adhesive layer.This oxidation of carbon adhesive layer, can be used to go from carrier substrate
Binding appts substrate.Because the carbon evaporation of oxidation, can be readily removable carbon adhesive layer, it is used to make again to clean carrier substrate
With.
Bonding strength between flexible glass substrate 20 and carrier substrate 12 can be reduced by aoxidizing carbon-based adhesive layer.Example
Such as in embodiment 5, heating bonding layer 30 can cause oxidation of coal to about 500 DEG C in the presence of oxygen.When ozone be present, carbon bonding
The oxidation of layer can occur at a temperature of less than 500 DEG C.In some embodiments, although the equipment substrate assembled completely is added
Heat is probably unacceptable to up to 500 DEG C, but laser can be used to be heated to adhesive layer to aoxidize required temperature.
With reference to figure 12, the absorbance of carbon-based adhesive layer 30 is shown.Laser can be used to local heating and aoxidize carbon-based bonding
Layer 30 (or any one as described herein or more kind jointing material).Carbon-based adhesive layer 30 can be applied as circumference bonding (figure
7) local heating, carried out with promotion with laser to carbon-based adhesive layer 30, bigger entrance is provided for carbon-based adhesive layer 30, because
Its circumference close to flexible glass substrate 20.Figure 12 is shown from the carbon-based of the phenolic resin formation described in example 6 above
The absorption spectrum of adhesive layer 30.Understand, absorb in visible ray and the increase of UV spectral regions so that heating bonding material can be used for calorifics
Oxidation.Dopant can be added to adhesive layer, to increase the amount of the radiation of absorption.
Laser for aiming at the mainly energy absorption in adhesive layer 30 heats or other heating means, should be by energy
Absorption spectrum of the source regulation to adhesive layer.In this case, laser is applied through flexible glass substrate 20 or carrier substrate 12
Or other energy.Flexible glass substrate 20 or carrier substrate 12 can be at least partly transparent to this energy.Most energy
Amount is perforated through flexible glass substrate 20 or carrier substrate 12, is then absorbed by adhesive layer 30.In the carbon-based films spectrum shown in Figure 12
In the case of, this can be realized by using red, green, blueness or UV light sources.Laser, LED and flash lamp are examples
Light source.Spectrum in Figure 12 shows strong absorption in the wavelength less than 700 nanometers.Compare the suction of typical glass carrier and carbon-based films
Receive, be probably maximally effective in the exposure wavelength of 400 nanometer of -550 nanometer range.
As described above, it can be selected for forming the jointing material of adhesive layer 30 based on specific device fabrication scene.For
The compatibility of adhesive layer 30 and Si TFT manufacturing process is proved, what is connected as described in Example 4Substrate
Following step is carried out on the 8cm x 12cm carrier substrates and equipment substrate of formation.After each step, by attempting bonding
In the plane of layer shear strength is tested from carrier substrate pulling apparatus substrate.All stack samples are all surveyed in shear stress
Survived in examination, and be easier to peel away after final 400 DEG C of stoves circulation.In order to carry out this assessment, by substrate to offset
Configuration is bonded together, to allow the partial substrate not bonded to promote shearing and peel test.The screening process includes：
1. deionized water at room temperature is soaked, N2Rifle dries up, and keeps being completely dried for 5 minutes with 100 DEG C of thermal station.
2. soaked 5 minutes with the photoresist developer of concentration, deionized water elution, N2Rifle dries up, and is dried with 100 DEG C of thermal station
5 minutes.
3. soaked 5 minutes with chromophore etchant, deionized water elution, N2Rifle dries up, and is dried 5 minutes with 100 DEG C of thermal station.
4. soaked 5 minutes with golden etchant, deionized water elution, N2Rifle dries up, and is dried 5 minutes with 100 DEG C of thermal station.
5. soaked 15 minutes with deionized water at 95-100 DEG C, N2Rifle dries up, and is dried 5 minutes with 100 DEG C of thermal station.
6. carrying out stove circulation at 400 DEG C in atmosphere, kept for 1 hour.
Again in other embodiments, adhesive layer 30 can be formed by amorphous silicon, be bonded using anode by flexible glass
Substrate 12 is adhered to carrier substrate 20.Amorphous silicon can be deposited on flexible glass substrate 12 and/or carrier substrate 20.It can wear
Cross stack of substrates overlapping piece (Fig. 1) and apply electrical bias, cause at the interface of adhesive layer 30, flexible glass substrate 12 and carrier substrate 20
Between formed enriched in oxygen layer, itself and oxidation pasc reaction formed amorphous si adhesion layer, the adhesive layer bonding flexible glass
Substrate 12 and carrier substrate 20.To or heat and/or pressure can be used to bond.Such as the pressure in the absence of any application
When, if amorphous silicon can be used under than application pressure (for example, more than 700 DEG C) lower temperature (for example, less than 500 DEG C)
Flexible glass substrate 12 is adhered to carrier substrate 12.In some embodiments it may be desirable to pressed down using relatively low temperature
Make any warpage in flexible glass substrate 20 or it is other potential the defects of, and this lack may be caused at relatively high temperatures
Fall into.
As described above, the bonding strength of the adhesive layer 30 formed by amorphous silicon by energy input, can be reduced.It is supplied to
The energy of adhesive layer 30 can cause amorphous silicon to be transformed into polysilicon or metal structure, using the material characteristics of transformation come from carrier
The debindered flexible glass substrate 20 of substrate 12.
With reference to figure 13, laser 200 can provide laser beam 202, and it, which is used to heat, is formed by amorphous silicon and bond flexibility
The adhesive layer 30 of glass substrate 12 and carrier substrate 20.Using the laser crystallization of high intensity laser pulse, available for will be without fixed
Shape silicon is heated to more than its fusing point.In some cases, it can be possible to partly melt bonded layer 30 is only needed, for example, bonding
Layer 30 and the interface between flexible glass substrate 20 and/or carrier substrate 20.The silicon of melting will then crystallize in cooling, change
The pattern 204 of adhesive layer 30, this can promote flexible glass substrate 12.In some embodiments, the pattern 204 of adhesive layer 30 can
Cause the region of stress and expansion in adhesive layer 30, this can promote to separate flexible glass substrate 20 from carrier substrate 12.
Any suitable laser energy can be used for melting and/or ablation silicon.As a kind of example, for HeNe laser
633nm, energy density are less than 0.8J cm-2Shi Keneng can not molten silicon surface, but energy density is more than 2J cm-2When, it can occur
The laser ablation of silicon.Laser pulse interval was 20 nanoseconds and energy density is 1.6J cm-2When, it is sufficient to molten silicon surface is without sending out
Raw burn is lost.Because the high-selenium corn of silicon, other suitable laser include UV laser.It is such as close for XeCl laser 308nm, energy
Degree is about 2-52J cm-230 nanosecond pulses can be used for ablation silicon.As another example, for ArF laser, energy density is more than
1J cm-212 nanosecond pulses can be used for ablation silicon.Laser beam can be supplied to adhesive layer 30 by following：Through carrier substrate
12 (Figure 14 A), through flexible glass substrate 20 (Figure 14 B) and/or between carrier substrate 12 and flexible glass substrate 20 (i.e.,
From side).
With reference to figure 15, laser 200 can provide laser beam 202, and it is used for the amorphous silicon of ablation adhesive layer 30.Pass through profit
With energy density more than silicon ablation threshold, adhesive layer 30 or its at least a portion can reduce into powder residue 205, thus promote
Enter from carrier substrate 20 and remove flexible glass substrate 12.The speed and the speed of the removal of flexible glass substrate 12 that silicon can be ablated,
Depend, at least partially, on laser energy density, pulse frequency and sweep speed.In order to faster sweep speed, increase
Energy density and pulse frequency.By laser close to silicon and the interface aggregates of flexible glass substrate 12, can promote more effectively to remove
Flexible glass substrate 12.
, in some embodiments, can be in the amorphous silicon melting of adhesive layer 30, by flexible glass substrate with reference to figure 16
12 separate from carrier substrate 20 (with shown in Figure 13 after polysilicon structure is formed it is opposite).Use laser 202 and laser
Beam 204, the melting of amorphous silicon structure locally reduce bonding strength, and this allows in the melting peel separation flexibility glass of position 206
Glass substrate 12.When silicon cools down, polysilicon layer 208 still retains.
Discharge flexible glass substrate
Any appropriate method can be used to discharge flexible glass substrate 20 from carrier substrate 12.As an example, because
For overall tensile-compression medial axis change in the shaping of the final equipment using flexible glass substrate 20, can be used for
The stress of delamination.Such as laminating flat can be placed in first together with bonding flexible glass substrate 20 and carrier substrate 12 close
Stress medial axis.When bonding is close to medial axis, mechanical stretching stress is minimum.When equipment assembles and flexible glass completely
Glass substrate 20 is adhered to carrier substrate 12, thereby increases and it is possible to which when having cover-plate glass, stress medial axis alterable, this can significantly increase
Stretching and bending stress along laminating flat, cause at least some delaminations.Also can be used any number of equipment such as skid plate,
Laser, knife, cutting wheel, corrosive agent trigger and/or complete delamination, and/or can remove flexible glass substrate manually.
Referring now to Figure 17, show that a kind of Exemplary adhesive layer 30 applies pattern, wherein by glass substrate 20 respectively or
Cut into multiple fragments, sometimes referred to as unit.Figure 17 shows the top view of stack 100, and it includes as described above viscous
Close the flexible glass substrate 20 of carrier substrate 12.Adhesive layer (can be used region A1Represent) can be applied in it is whole (or less than whole
It is individual) on the footprint of flexible glass substrate 20, it is located on the glass support surface 14 of carrier substrate 12.In illustrated embodiment
In, flexible glass substrate 20 is subdivided into unit 102 and (also uses A2Represent) it is used to be processed further, it has periphery 104.
By applying adhesive layer A below unit 1021, can minimize or prevent process fluid from leaking into by unit 102
The region of restriction, this leakage may pollute follow-up processing or may prematurely (or it are at least by flexible glass substrate 20
A part) separated from carrier substrate 12.
, can be by polylith flexible glass substrate 20 although being shown as 1 piece of flexible glass substrate 20 is adhered to carrier substrate 12
It is adhered to one piece of carrier substrate 12 or polylith carrier substrate 12.In this case, can simultaneously or in an appropriate order mode will
Carrier substrate 12 and flexible glass substrate 20 separate.
, can be by any number of unit 102 and any number of miscellaneous equipment unit by peripherally 104 cuttings
102 separation.Exhaust can be provided to reduce any expansion or the other detrimental effects in flexible glass substrate 20.Laser can be used
Or other cutting equipments cut individual equipment unit 102 from flexible glass band 20.In addition, it can so perform cutting so that only cut
Cut or scribing flexible glass substrate 20, without cut vector substrate 12 to make it possible to reuse carrier substrate 12.It can be used
Etching and/or any other clean method remove any residue that adhesive layer 30 leaves.Etching can be additionally used in help will be soft
Property glass substrate 20 removes from carrier substrate 12.
With reference to figure 18, it is shown that for by the unit 140 of flexible glass substrate 20 from the side that carrier substrate 12 removes
The embodiment of method, such as, other required structures that the unit has electronic device 145 or is formed on.Arbitrary number
Unit 140 can be made up of the flexible glass substrate 20 for being adhered to carrier substrate, it is big depending on flexible glass substrate 20
The small and size of unit 140.Such as flexible glass substrate can be for 2 generation sizes or bigger, such as, 3 generations, 4 generations, 5 generations, 8 generations
It is or bigger (such as plate size is 100mm x 100mm to 3 meters of 3 meters or bigger of x).In order to allow user to carry out decision device unit
140 arrangement-for example for the size of unit 140, number and shape-people are want from being adhered to carrier substrate 12
Prepared by flexible glass substrate 20, flexible glass substrate 20 can be provided as illustrated in fig. 14.Specifically, there is provided a kind of substrate
Stack 10, it includes flexible glass substrate 20 and carrier substrate 12.Flexible glass substrate 20 is adhered in the region 142 of bonding
Carrier substrate 12, the region 142 of the bonding is around unbonded region 144.
The region 142 of bonding is arranged on the periphery of flexible glass substrate 20, entirely around unbonded region 144.It is this
The region 142 continuously bonded can be used to seal flexible glass substrate 20 and carrier substrate 12 on the periphery of flexible glass substrate 20
Between any gap, from without retain process fluid, the process fluid otherwise retained may pollute transmission stack of substrates overlapping piece
The 10 follow-up processes passed through.But in other embodiments, the region of discrete bonding can be used.
CO can be used2Laser beam is come the periphery 146 of part 140 needed for cutting.CO2Laser makes it possible to integral cutting (100%
Thickness) flexible glass substrate 20.For CO2Laser cutting, laser beam is gathered into the small of the surface 24 of flexible glass substrate 20
The circular harness shape of diameter, and moved along required track, and can have coolant jet below.Such as coolant jet can be
Air nozzle, compressed air stream is delivered on the surface of thin plate by it by small diameter bore.Water also can be used or use empty solution-air
Body mist.Once the periphery 146 of cutting equipment unit 140, unit 140 can be gone from remaining flexible glass substrate 20
Remove.Then, energy input can be applied to adhesive layer 30, it changes the structure of adhesive layer 30.This structural change reduces bonding
The bonding strength of layer 30, to promote to separate remaining flexible glass substrate 20 from carrier substrate 12.
With reference to figure 19, a kind of embodiment for the method for discharging flexible glass substrate 20 from carrier substrate 12 is shown.
Once flexible glass substrate 20 is processed into including required equipment 150 (such as LCD, OLED or TFT electronic devices) and example
Such as, unit 140 is eliminated, just by remaining flexible glass substrate 20 (or monoblock flexible glass substrate 20) from carrier substrate
12 releases.In the present embodiment, adhesive layer 30 is formed as periphery bonding 152, forms the region 154 of bonding and unbonded
Region 156.Laser beam 160 (such as wavelength is about 400nm-750nm) is oriented to flexible glass substrate 162 and carried by laser 158
Between body substrate 12, with the part of local heating adhesive layer 30.LED and flash of light lamp source also can be used, they are arrived into adhesive layer 30
Absorb.Such as laser 158 can be used to local heating and aoxidize carbon-based adhesive layer 30.Periphery bonding 152 can pass through laser
158 promote the local heating of carbon-based adhesive layer 30, provide the bigger entrance to carbon-based adhesive layer 30 because it is close to flexible glass
The periphery of glass substrate 20 and with less cross-sectional area (such as with the bonding phase through 12 whole width of flexible glass substrate
Than).
Above-mentioned adhesive layer can provide inorganic adhesion method, and it is made it possible under existing equipment and manufacturing condition using thin soft
Property glass substrate.Carrier substrate can reuse from different flexible glass substrates.Stack includes carrier substrate, flexible glass
Substrate and adhesive layer, it is composable and then transports for being processed further.Or before transportation, can be assembled some or not
Assemble stack.In order to which as carrier substrate, carrier substrate needs not to be original.For example, carrier substrate can be subjected to excessively bundling
Or apply excessive striped so that they are not suitable for display device.It can avoid directly using thin substrate using carrier substrate
The problem of, such as the scrobicula around vacuum hole and increased electrostatic problem.The height of adhesive layer can be with thin (for example, about 10 microns
Or it is smaller, or about 1-100 microns), it is for example sagging that this can minimize flatness problem, and promotes to be used as through whole carrier
Substrate apply continuous film, or Topical application for example around periphery.
It is unrestricted in order to explain in detailed description above, the illustrative embodiments of explanation detail are given, with
Fully understanding to the various principles of the present invention is provided.But it will be obvious to those skilled in the art that from
After this specification benefits, the present invention can be implemented according to the other embodiment different from detail described herein.In addition, this
Text may save the description to well-known device, method and material, in order to avoid description of the interference to the various principles of the present invention.
Finally, in the case of any be applicable, identical reference represents identical element.
Herein, scope can be expressed as beginning from " about " occurrence, and/or another occurrence stops to " about ".
As statement during scope, another embodiment includes beginning from a certain occurrence and/or extremely another occurrence stops.Similarly,
When it is approximation to use prefix " about " to represent numerical value, it should be appreciated that concrete numerical value is formed on the other hand.Should further it manage
Solution, it is all meaningful when the end points of each scope is related and unrelated to another end points.
Direction term used herein, such as up, down, left, right, before and after, top, bottom, be only with reference to draw accompanying drawing and
Speech, is not used to represent absolute orientation.
Unless expressly stated otherwise, otherwise, should not be construed to any method as described herein must be according to specific suitable
Sequence carries out its step.Therefore, in any way, when claim to a method is practically without stating the order that its step should follow
When, or when not illustrating the step in addition in claim or description and should be limited to particular order, should not be inferred to
Any particular order.Any possible explanation foundation being not explicitly described so is equally applicable to, including：On setting steps or
The logic of operating process；The general sense obtained by syntactic structure or punctuate；The quantity or kind of embodiment described in specification
Class.
As used herein, singulative "one", " one kind " and "the" include plural form, unless
Clearly state.Thus, for example, the one kind " component " mentioned includes the aspect with two or more this class components, unless literary
There is other explicitly indicate that in this.
It should be emphasized that the above-mentioned embodiment of the present invention, particularly any " preferable " embodiment, are only to realize
Embodiment, merely to be clearly understood that the present invention various principles and state.Can be not deviate substantively from the present invention's
In the case of spiritual and various principles, many changes and adjustment are carried out to the above-mentioned embodiment of the present invention.All these changes
It is intended to be included in modification in the range of specification and appended protection.
Claims (11)
1. a kind of method of processing flexibility glass substrate, this method comprise the following steps：
Stack of substrates overlapping piece is provided, it is adhered to the flexible glass substrate of carrier substrate including the use of inorganic bond layer, and this is inorganic viscous
Layer recurring structure after energy input is received is closed to change；
It is supplied to inorganic bond layer to be used to trigger structural change energy input, this structural change reduces the viscous of inorganic bond layer
Intensity, for flexible glass substrate to be separated from carrier substrate；
The structural change is included by the microcosmic of crystallization, the porosity of increase inorganic bond layer or increase inorganic bond layer
Crackle, to reduce the adhesion strength of inorganic bond layer, while provide in inorganic bond layer and flexible glass substrate and carrier substrate
It is at least one between cohesive bond；And
After the adhesion strength of inorganic bond layer is reduced, the adhesion failure of induction inorganic bond layer.
2. a kind of method of processing flexibility glass substrate, this method comprise the following steps：
Carrier substrate with glass support surface is provided；
Flexible glass substrate is provided, it has the first and second wide surfaces；
Using inorganic bond layer, by the glass support surface of the first of flexible glass substrate the wide surface bonding to carrier substrate；With
Change the structure of inorganic bond layer and reduce the adhesion strength between the flexible glass substrate and the carrier substrate, use
In by flexible glass substrate from carrier substrate remove；
The structural change is included by the microcosmic of crystallization, the porosity of increase inorganic bond layer or increase inorganic bond layer
Crackle, to reduce the adhesion strength of inorganic bond layer, while provide in inorganic bond layer and flexible glass substrate and carrier substrate
It is at least one between cohesive bond, the structural change adds the etch selectivity of inorganic bond layer.
3. method as claimed in claim 2, it is characterised in that also include energy input being supplied to inorganic bond layer, be used for
Adhesion strength between the structure and the reduction flexible glass substrate and carrier substrate of change inorganic bond layer.
4. the method as described in claim 1 or claim 3, it is characterised in that the energy input is heat energy or luminous energy, is incited somebody to action
Inorganic bond layer is heated at least 250 DEG C of temperature.
5. such as the method any one of claim 1-3, it is characterised in that use laser or flash lamp local heating institute
State inorganic bond layer.
6. such as the method any one of claim 1-3, it is characterised in that the inorganic bond layer is included only along flexibility
The inorganic bonding material that the periphery of glass substrate is set, there is provided the unbonded region of flexible glass substrate.
7. the method as described in claim 1 or any one of claim 3, it is characterised in that be additionally included in and put forward energy input
After supplying the inorganic bond layer, flexible glass substrate is removed from carrier substrate.
8. such as the method any one of claim 1-3, it is characterised in that the jointing material includes one or more
Glass, glass ceramics, ceramics, carbon and silicon.
9. such as the method any one of claim 1 or claim 3, it is characterised in that the energy input is heat energy
Or luminous energy, and methods described is including the jointing material to be heated to at least 250 DEG C of temperature without reducing bonding strength.
10. a kind of stack of substrates overlapping piece, it includes：
Carrier substrate with glass support surface；
Flexible glass substrate, it is supported by the glass support surface of the carrier substrate；With
Inorganic bond layer, the flexible glass substrate is adhered to the carrier substrate by it, and the inorganic bond layer includes bonding
Material, the jointing material change structure and reduce the adhesion strength between flexible glass substrate and carrier substrate, for by flexibility
Glass substrate removes from carrier substrate, while provides inorganic bond layer and at least one of flexible glass substrate and carrier substrate
Between cohesive bond, the structural change adds the etch selectivity of inorganic bond layer；
The structural change includes the microfissure of crystallization, the porosity of increase inorganic bond layer or increase inorganic bond layer.
11. stack of substrates overlapping piece as claimed in claim 10, it is characterised in that the jointing material includes glass, glass ceramics
At least one of with ceramics.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261691904P | 2012-08-22 | 2012-08-22 | |
| US61/691,904 | 2012-08-22 | ||
| PCT/US2013/054473 WO2014031372A1 (en) | 2012-08-22 | 2013-08-12 | Processing flexible glass substrates |
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| Publication Number | Publication Date |
|---|---|
| CN104685627A CN104685627A (en) | 2015-06-03 |
| CN104685627B true CN104685627B (en) | 2017-12-05 |
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| CN201380041476.3A Expired - Fee Related CN104685627B (en) | 2012-08-22 | 2013-08-12 | Processing flexibility glass substrate |
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| Country | Link |
|---|---|
| JP (1) | JP2015532004A (en) |
| KR (1) | KR20150046218A (en) |
| CN (1) | CN104685627B (en) |
| TW (1) | TWI589443B (en) |
| WO (1) | WO2014031372A1 (en) |
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| KR102559221B1 (en) * | 2014-10-31 | 2023-07-25 | 코닝 인코포레이티드 | Dimensionally stable fast etching glasses |
| CN104992944B (en) | 2015-05-26 | 2018-09-11 | 京东方科技集团股份有限公司 | A kind of production method of Flexible Displays motherboard and flexible display panels |
| JP7091121B2 (en) * | 2018-04-18 | 2022-06-27 | 信越石英株式会社 | Quartz glass plate |
| CN108962028B (en) | 2018-07-10 | 2020-03-31 | 云谷（固安）科技有限公司 | Flexible display screen cover plate, flexible display module and flexible display device |
| CN112297546A (en) * | 2019-07-24 | 2021-02-02 | 东旭光电科技股份有限公司 | Preparation method of display panel |
| CN111393032B (en) * | 2020-04-13 | 2022-07-08 | Oppo广东移动通信有限公司 | Microcrystalline glass cover plate, flexible screen assembly, electronic equipment and microcrystalline glass cover plate processing method |
| CN112582576A (en) * | 2020-12-10 | 2021-03-30 | 深圳市华星光电半导体显示技术有限公司 | Flexible substrate preparation method and display panel |
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| CN102007524A (en) * | 2008-04-17 | 2011-04-06 | 旭硝子株式会社 | Glass laminate, display panel with support, method for producing glass laminate and method for manufacturing display panel with support |
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| US5281560A (en) * | 1993-06-21 | 1994-01-25 | Corning Incorporated | Non-lead sealing glasses |
| CN1143394C (en) * | 1996-08-27 | 2004-03-24 | 精工爱普生株式会社 | Separating method, method for transferring thin film device, thin film device, thin film IC device and liquid crystal display device mfg by using transferring method |
| JP2000252342A (en) * | 1999-03-01 | 2000-09-14 | Seiko Epson Corp | Method for transporting thin plate and manufacture of liquid crystal panel |
| JP2004186201A (en) * | 2002-11-29 | 2004-07-02 | Sekisui Chem Co Ltd | Method of handling thin glass panel |
| US20060207967A1 (en) * | 2003-07-03 | 2006-09-21 | Bocko Peter L | Porous processing carrier for flexible substrates |
| JP2007036074A (en) * | 2005-07-29 | 2007-02-08 | Toshiba Corp | Method for manufacturing semiconductor device |
| JP2006152308A (en) * | 2005-12-28 | 2006-06-15 | Nitto Denko Corp | Method of cutting electronic part |
| KR100820170B1 (en) * | 2006-08-30 | 2008-04-10 | 한국전자통신연구원 | A Flexible Substrate Adhesion Method |
| KR101458901B1 (en) * | 2008-04-29 | 2014-11-10 | 삼성디스플레이 주식회사 | Method of manufacturing flexible display device |
| WO2010047273A1 (en) * | 2008-10-23 | 2010-04-29 | 旭硝子株式会社 | Glass substrate laminated device and method for producing laminate glass substrate |
| US9063605B2 (en) * | 2009-01-09 | 2015-06-23 | Apple Inc. | Thin glass processing using a carrier |
| JP2011003668A (en) * | 2009-06-17 | 2011-01-06 | Seiko Epson Corp | Method of transferring element and method of manufacturing electronic equipment |
| JP2012064710A (en) * | 2010-09-15 | 2012-03-29 | Asahi Glass Co Ltd | Manufacturing method of semiconductor element |
| JP2012109538A (en) * | 2010-10-29 | 2012-06-07 | Tokyo Ohka Kogyo Co Ltd | Laminate and method for separating the same |
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2013
- 2013-08-12 WO PCT/US2013/054473 patent/WO2014031372A1/en active Application Filing
- 2013-08-12 JP JP2015528515A patent/JP2015532004A/en not_active Ceased
- 2013-08-12 KR KR20157007085A patent/KR20150046218A/en not_active Application Discontinuation
- 2013-08-12 CN CN201380041476.3A patent/CN104685627B/en not_active Expired - Fee Related
- 2013-08-15 TW TW102129312A patent/TWI589443B/en not_active IP Right Cessation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102007524A (en) * | 2008-04-17 | 2011-04-06 | 旭硝子株式会社 | Glass laminate, display panel with support, method for producing glass laminate and method for manufacturing display panel with support |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014031372A1 (en) | 2014-02-27 |
| TWI589443B (en) | 2017-07-01 |
| TW201410474A (en) | 2014-03-16 |
| CN104685627A (en) | 2015-06-03 |
| KR20150046218A (en) | 2015-04-29 |
| JP2015532004A (en) | 2015-11-05 |
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