CN104681459B - A kind of metal etch process detection method - Google Patents
A kind of metal etch process detection method Download PDFInfo
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- CN104681459B CN104681459B CN201310627003.3A CN201310627003A CN104681459B CN 104681459 B CN104681459 B CN 104681459B CN 201310627003 A CN201310627003 A CN 201310627003A CN 104681459 B CN104681459 B CN 104681459B
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- wire jumper
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Abstract
The invention provides a kind of metal etch process detection method, including：Generation wire jumper resistance to be detected；Input test electric signal, obtains the first value of an electrical property of the wire jumper resistance to be detected；Metal level is formed on the wire jumper resistance to be detected；The ohmically metal level of wire jumper to be detected is performed etching according to the ohmically wire structures of the wire jumper；The test electric signal is input into, the second value of an electrical property of the wire jumper resistance described to be detected after etching is obtained；The first value and second value according to an electrical property, judge whether the etching technics of the ohmically metal level of the wire jumper meets preset requirement.The technical scheme provided using the present invention, can detect whether the etching technics of the ohmically metal level of wire jumper meets preset requirement, avoid when being performed etching to the ohmically metal level of wire jumper, the dielectric layer of wire jumper resistance does not stop the problem of etching injury completely.
Description
Technical field
The present invention relates to semiconductor fabrication process field, more particularly to a kind of metal etch process detection method.
Background technology
As the manufacturing process of integrated circuit is continued to develop, semiconductor feature sizes constantly reduce.And due to semiconductor
Metal wire design arrangement when it is excessively intensive so that some metal wires can not be directly connected to, now, it is necessary to wire jumper electricity
Hinder to connect these metal wires.As shown in figure 1, between metal wire 101 and metal wire 102, some metal wires of having arranged
Bar causes that metal wire 101 is not easy to be directly connected to metal wire 102, now metal wire 101 and metal wire 102 it
Between be connected to a wire jumper resistance 103, metal wire 101 is easily coupled together with metal wire 102 by wire jumper resistance 103.
However, after metal level is formed on wire jumper resistance in the semiconductors, during being etched to the metal level, such as
Fruit metal etch process is unstable so that the dielectric layer of wire jumper resistance can not completely stop etching injury, can influence wire jumper resistance
Resistance size.Accordingly, it would be desirable to a kind of method can be detected to metal etch process, in case to the metal level of wire jumper resistance
Etching cause the damage of wire jumper resistance.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of metal etch process detection method, can detect wire jumper electricity
Whether the etching technics of the metal level in resistance meets preset requirement, it is to avoid perform etching to the ohmically metal level of wire jumper
When, the dielectric layer of wire jumper resistance does not stop the problem of etching injury completely.
To achieve these goals, the invention provides a kind of metal etch process detection method, including：Generation is to be detected
Wire jumper resistance；Input test electric signal, obtains the first value of an electrical property of the wire jumper resistance to be detected；Treated described
Metal level is formed on the wire jumper resistance of detection；According to the ohmically wire structures of the wire jumper to the wire jumper resistance to be detected
On metal level perform etching；The test electric signal is input into, the described of the wire jumper resistance described to be detected after etching is obtained
The second value of one electrical property；The first value and second value according to an electrical property, judge the ohmically metal level of the wire jumper
Etching technics whether meet preset requirement.
Further, the wire jumper resistance is p-type resistance；Generation wire jumper resistance to be detected, specially：Partly leading
The predetermined region implanting p-type ion for forming p-type resistance of body substrate；Medium is formed in the predetermined region for forming p-type resistance
Layer；Fairlead is formed on the dielectric layer.
Further, the metal level is aluminium lamination.
Further, the test electric signal is input into, the electrical property of the wire jumper resistance to be detected is obtained, specially：
Draw the conductive part being connected with test probe respectively at two fairleads of the wire jumper resistance to be detected；In described two surveys
Add a voltage between souning out pin, obtain the electrical property of the wire jumper resistance to be detected.
Above-mentioned technical proposal of the invention has the beneficial effect that：
Whether the present invention is changed by the electrical property of the wire jumper resistance after the electrical property and etching for detecting wire jumper resistance,
Detect to whether the etching technics of the ohmically metal level of wire jumper meets preset requirement.
Brief description of the drawings
Fig. 1 is wire jumper resistance schematic diagram.
Fig. 2 is the metal etch process detection method flow chart that the embodiment of the present invention 1 is provided.
Fig. 3 is the structural representation of the electrical property of the acquisition wire jumper resistance to be detected that the embodiment of the present invention 1 is provided.
Fig. 4 is the electrical property of the acquisition by the wire jumper resistance to be detected after metal etch of the offer of the embodiment of the present invention 1
Structural representation.
Fig. 5 is the metal etch process detection method flow chart that the embodiment of the present invention 2 is provided.
Specific embodiment
To make the technical problem to be solved in the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing and tool
Body embodiment is described in detail.
Embodiments of the invention are directed in the prior art during being performed etching to the ohmically metal level of wire jumper, are carved
The unstable dielectric layer that can cause wire jumper resistance of etching technique cannot completely stop the problem of etching injury, there is provided Yi Zhongjin
Category etching technics detection method, can detect to whether the etching technics of the ohmically metal level of wire jumper meets preset requirement.
Fig. 2 is the metal etch process detection method flow chart that the embodiment of the present invention 1 is provided.As illustrated, including：
Step S200, generates wire jumper resistance to be detected；
Step S202, input test electric signal obtains the first value of an electrical property of the wire jumper resistance to be detected；
Step S204, metal level is formed on the wire jumper resistance to be detected；
Step S206, according to the ohmically wire structures of the wire jumper to the ohmically metal level of wire jumper to be detected
Perform etching；
Step S208, is input into the test electric signal, obtains described of the wire jumper resistance described to be detected after etching
The second value of electrical property；
Step S210, the first value and second value according to an electrical property, judges the ohmically metal level of the wire jumper
Etching technics whether meet preset requirement.
In the above-mentioned technical solutions, by detecting the first value of an electrical property of wire jumper resistance and through the wire jumper after over etching
The second value of the electrical property of resistance, the first value and second value according to an electrical property, it is possible to judge the wire jumper electricity
Whether the etching technics of the metal level in resistance meets preset requirement.When thering is metal wire to arrange on wire jumper resistance, need first
To form metal level on wire jumper resistance, metal level can be formed by way of deposition, it is also possible to shape in other way
Into the then arrangement according to metal wire on wire jumper resistance is performed etching to metal level, if etching technics is unstable, can be made
Into the damage of wire jumper resistance, the electrical property of wire jumper resistance is had influence on.Therefore, by comparing wire jumper resistance before metal etch process
The value of same electrical property afterwards, it is possible to judge whether the etching technics of the ohmically metal level of wire jumper meets preset requirement.
Further, the wire jumper resistance is p-type resistance；Generation wire jumper resistance to be detected, can be specially：
The predetermined region implanting p-type ion for forming p-type resistance of Semiconductor substrate；Formed in the predetermined region for forming p-type resistance
Dielectric layer；Fairlead is formed on the dielectric layer.
In the above-mentioned technical solutions, the wire jumper resistance is p-type resistance, and the generation of p-type resistance is by Semiconductor substrate
The predetermined region implanting p-type ion for forming p-type resistance, then form dielectric layer in the predetermined region for forming p-type resistance,
Fairlead is formed on the dielectric layer again and is formed p-type resistance.The ohmically dielectric layer of p-type, than relatively thin, is in growth grid
Formed simultaneously during oxygen, about 500 Izods are right；And in the ohmically metal wire of making p-type, when metal etch process exception
When, it is easy to the dielectric layer of p-type resistance under metal level is etched away into a part, if the dielectric layer of p-type resistance is etched completely
It is complete, p-type resistance will be damaged to, cause the electrical property of p-type resistance to change.Therefore, by detecting the electrical property of p-type resistance
Change before and after etching is that can determine whether whether metal etch process meets preset requirement.
Further, the metal level can be aluminium lamination.
Further, the test electric signal is input into, the electrical property of the wire jumper resistance to be detected is obtained, can be specific
For：Draw the conductive part being connected with test probe respectively at two fairleads of the wire jumper resistance to be detected；Described two
Add a voltage between individual test probe, obtain the electrical property of the wire jumper resistance to be detected.
Fig. 3 is the structural representation of the electrical property of the acquisition wire jumper resistance to be detected that the embodiment of the present invention 1 is provided.As schemed
Show, draw conductive part 11 respectively at two fairleads of wire jumper resistance 12 to be detected, shown conductive part 11 can be by gold
Category lead 13 is drawn, for example, drawn by aluminum steel bar.Add a voltage between two conductive parts 11, obtained by be checked by testing
The electric current of the wire jumper resistance 12 of survey.
Fig. 4 is the electrical property of the acquisition by the wire jumper resistance to be detected after metal etch of the offer of the embodiment of the present invention 1
Structural representation.As illustrated, by the wire jumper resistance 12' to be detected after metal etch, being provided with after over etching
Metal level 14, drawing conductive part 11 respectively at two fairleads of wire jumper resistance 12' to be detected after metal etch,
Shown conductive part 11 can be drawn by metal lead wire 13, for example, drawn by aluminum steel bar.It is electric Jia one between two conductive parts 11
Pressure, is obtained by the electric current of wire jumper resistance 12 to be detected by testing.
Certainly, the electrical property of wire jumper resistance to be detected is not limited solely to be the electric current by wire jumper resistance to be detected, it is also possible to
For the resistance value of wire jumper resistance to be detected or other can represent the electrical parameter of wire jumper resistance to be detected.Obtain wire jumper to be detected
The electrical property of resistance is also not limited solely to the above method, for example, the resistance of wire jumper resistance can be directly tested using four-point probe
Value or the resistance value using vanderburg commercial measurement wire jumper resistance.As shown in Figure 3 or Figure 4, two of which conductive part 11 can be
Test PAD, can test PAD be connected with the test probe of test instrument probe, test pass through wire jumper resistance 12 to be detected or
By the electric current of the wire jumper resistance 12' to be detected after metal etch.
Fig. 5 is the metal etch process detection method flow chart that the embodiment of the present invention 2 is provided.As illustrated, including：
Step S500, generates the first p-type resistance and the second p-type resistance to be detected；In this step, in the pre- of semiconductor
Determine to generate two p-type resistance to be detected simultaneously using identical technique in region.
Step S502, metal level is formed on two p-type resistance；In this step, in the first p-type resistance and the second p-type
Metal level is formed simultaneously using identical technique respectively on resistance, and the overlay area of metal level is respectively greater than the first p-type resistance
Region and the second p-type resistance region.
Two ohmically metal levels of p-type are performed etching by step S504；In this step, it is ohmically to the first p-type
Metal level is performed etching, and the covering ohmically metal level of the first p-type is etched away, and a member-retaining portion metal level is with the first p-type
Lead and the test PAD being connected with test probe are formed at the fairlead of resistance；According to the ohmically wire structures of the second p-type
The ohmically metal level of second p-type is performed etching, is retained metal level and is formed predetermined wire bond with the second p-type resistance
Structure, and the lead drawn from the fairlead of the second p-type resistance and the test PAD being connected with test probe.
Step S506, input test electric signal obtains the value of an electrical property of the first p-type resistance；In this step, by
The test PAD two ends connecting test probe of one p-type resistance, to test the value of an electrical property of the first p-type resistance, such as a P
The resistance value of type resistance.
Step S508, is input into the test electric signal, obtains the value of an electrical property of the second p-type resistance；In this step
In rapid, by the test PAD two ends connecting test probe of the second p-type resistance, electric signal is tested using identical, to test the 2nd P
The value of the mutually same electrical property of type resistance, such as resistance value of the second p-type resistance.
Step S510, the value of the electrical property according to the first p-type resistance and an electrical property of the second p-type resistance
Value, judge whether the etching technics of the ohmically metal level of the second p-type meets preset requirement.Due to metal etch
" load effect ", that is, speed is slower when etching large-area metal, and etching metal concentration region speed is very fast, therefore when in p-type electricity
When having metal lead wire to arrange in resistance, p-type resistance is easier to sustain damage；When the work to the enterprising row metal etching of the second p-type resistance
When skill is unstable, this kind of p-type resistance can show the phenomenon that electrical property changes.Therefore, in this step, by comparing
The value of the same electrical performance of the value of the electrical property of one p-type resistance and the second p-type resistance, you can find ohmically to the second p-type
Whether the etching technics of metal level meets preset requirement.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, on the premise of principle of the present invention is not departed from, some improvements and modifications can also be made, these improvements and modifications
Should be regarded as protection scope of the present invention.
Claims (4)
1. a kind of metal etch process detection method, it is characterised in that including：
Generation wire jumper resistance to be detected；
Input test electric signal, obtains the first value of an electrical property of the wire jumper resistance to be detected；
Metal level is formed on the wire jumper resistance to be detected；
The ohmically metal level of wire jumper to be detected is performed etching according to the ohmically wire structures of the wire jumper；
The test electric signal is input into, the second of an electrical property of the wire jumper resistance described to be detected after etching is obtained
Value；
According to an electrical property first value and second value, judge the ohmically metal level of the wire jumper etching technics whether
Meet preset requirement, the electrical property is the current value or resistance of the wire jumper resistance.
2. the method for claim 1, it is characterised in that
The wire jumper resistance is p-type resistance；
Generation wire jumper resistance to be detected, specially：
In the predetermined region implanting p-type ion for forming p-type resistance of Semiconductor substrate；
Dielectric layer is formed in the predetermined region for forming p-type resistance；
Fairlead is formed on the dielectric layer.
3. the method for claim 1, it is characterised in that
The metal level is aluminium lamination.
4. method as claimed in claim 2, it is characterised in that
The test electric signal is input into, the electrical property of the wire jumper resistance to be detected is obtained, specially：
Draw the conductive part being connected with test probe respectively at two fairleads of the wire jumper resistance to be detected；
Add a voltage between described two test probes, obtain the electrical property of the wire jumper resistance to be detected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310627003.3A CN104681459B (en) | 2013-11-28 | 2013-11-28 | A kind of metal etch process detection method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310627003.3A CN104681459B (en) | 2013-11-28 | 2013-11-28 | A kind of metal etch process detection method |
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| CN104681459A CN104681459A (en) | 2015-06-03 |
| CN104681459B true CN104681459B (en) | 2017-06-30 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0047886B1 (en) * | 1980-09-12 | 1986-05-28 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN101290900A (en) * | 2007-04-20 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | Monitoring methods of etching |
| CN101667550A (en) * | 2008-09-05 | 2010-03-10 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring metal layer on gate structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW451447B (en) * | 1999-12-31 | 2001-08-21 | Samsung Electronics Co Ltd | Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same |
| US20120007073A1 (en) * | 2010-07-06 | 2012-01-12 | Anjum Mehta | Semiconductor Wafer Constructions, And Methods For Quality Testing Material Removal Procedures During Semiconductor Fabrication Processes |
-
2013
- 2013-11-28 CN CN201310627003.3A patent/CN104681459B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0047886B1 (en) * | 1980-09-12 | 1986-05-28 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN101290900A (en) * | 2007-04-20 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | Monitoring methods of etching |
| CN101667550A (en) * | 2008-09-05 | 2010-03-10 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring metal layer on gate structure |
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| CN104681459A (en) | 2015-06-03 |
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Effective date of registration: 20220718 Address after: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee after: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before: 100871 room 808, founder building, Zhongguancun, 298 Chengfu Road, Haidian District, Beijing Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |
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