CN104681419A - 用于激光加热和离子注入的装置和方法 - Google Patents
用于激光加热和离子注入的装置和方法 Download PDFInfo
- Publication number
- CN104681419A CN104681419A CN201410679836.9A CN201410679836A CN104681419A CN 104681419 A CN104681419 A CN 104681419A CN 201410679836 A CN201410679836 A CN 201410679836A CN 104681419 A CN104681419 A CN 104681419A
- Authority
- CN
- China
- Prior art keywords
- laser
- substrate
- ion
- semiconductor element
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000005468 ion implantation Methods 0.000 title abstract description 26
- 238000004093 laser heating Methods 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims abstract description 101
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims description 39
- 238000000137 annealing Methods 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 abstract description 10
- 238000005280 amorphization Methods 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 26
- 230000005855 radiation Effects 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000012535 impurity Substances 0.000 description 7
- 238000005224 laser annealing Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000010561 standard procedure Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66803—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/094,819 | 2013-12-03 | ||
US14/094,819 US9373512B2 (en) | 2013-12-03 | 2013-12-03 | Apparatus and method for laser heating and ion implantation |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104681419A true CN104681419A (zh) | 2015-06-03 |
CN104681419B CN104681419B (zh) | 2018-03-09 |
Family
ID=53265922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410679836.9A Active CN104681419B (zh) | 2013-12-03 | 2014-11-24 | 用于激光加热和离子注入的装置和方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9373512B2 (zh) |
CN (1) | CN104681419B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104752213A (zh) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
CN106271079A (zh) * | 2016-08-26 | 2017-01-04 | 深圳市联赢激光股份有限公司 | 一种电池注液孔的双波长复合焊接方法 |
CN106856159A (zh) * | 2015-12-08 | 2017-06-16 | 英飞凌科技股份有限公司 | 用于离子注入的装置和方法 |
CN107919270A (zh) * | 2017-11-03 | 2018-04-17 | 惠科股份有限公司 | 低温多晶硅薄膜及晶体管的制造方法 |
CN108198859A (zh) * | 2017-12-29 | 2018-06-22 | 睿力集成电路有限公司 | 鳍型半导体结构、晶体管结构及其制备方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015189875A1 (ja) * | 2014-06-12 | 2015-12-17 | 富士電機株式会社 | 不純物添加装置、不純物添加方法及び半導体素子の製造方法 |
US9343312B2 (en) * | 2014-07-25 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | High temperature intermittent ion implantation |
US9685303B2 (en) * | 2015-05-08 | 2017-06-20 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for heating and processing a substrate |
US11695042B2 (en) | 2021-04-08 | 2023-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transistor contacts and methods of forming the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206049A (ja) * | 1992-01-30 | 1993-08-13 | Matsushita Electric Ind Co Ltd | イオン打ち込み方法及びイオン打ち込み装置 |
US20050103998A1 (en) * | 2003-09-29 | 2005-05-19 | Somit Talwar | Laser thermal annealing of lightly doped silicon substrates |
JP2005268487A (ja) * | 2004-03-18 | 2005-09-29 | Fuji Electric Device Technology Co Ltd | 半導体素子の製造方法および半導体素子の製造装置 |
US20080044257A1 (en) * | 2006-08-15 | 2008-02-21 | Varian Semiconductor Equipment Associates, Inc. | Techniques for temperature-controlled ion implantation |
CN102768973A (zh) * | 2012-07-20 | 2012-11-07 | 清华大学 | 一种用于离子注入的激光辅助装置及其使用方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6413802B1 (en) | 2000-10-23 | 2002-07-02 | The Regents Of The University Of California | Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture |
US7148159B2 (en) | 2003-09-29 | 2006-12-12 | Ultratech, Inc. | Laser thermal annealing of lightly doped silicon substrates |
JP2007525813A (ja) | 2003-12-04 | 2007-09-06 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 犠牲注入層を用いて非晶質ではない超薄膜半導体デバイスを形成させるための方法 |
US7135392B1 (en) * | 2005-07-20 | 2006-11-14 | Applied Materials, Inc. | Thermal flux laser annealing for ion implantation of semiconductor P-N junctions |
US7323389B2 (en) | 2005-07-27 | 2008-01-29 | Freescale Semiconductor, Inc. | Method of forming a FINFET structure |
DE102006015086B4 (de) | 2006-03-31 | 2010-07-01 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung äußerst flacher Übergänge mit hoher Qualität durch eine Kombination einer Festphasenepitaxie und einer Laserausheizung |
US7341902B2 (en) | 2006-04-21 | 2008-03-11 | International Business Machines Corporation | Finfet/trigate stress-memorization method |
US8324011B2 (en) * | 2007-09-11 | 2012-12-04 | Globalfoundries Singapore Pte. Ltd. | Implementation of temperature-dependent phase switch layer for improved temperature uniformity during annealing |
US8461033B2 (en) * | 2009-01-13 | 2013-06-11 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus and method for heating substrate by light-irradiation |
US8008176B2 (en) | 2009-08-11 | 2011-08-30 | Varian Semiconductor Equipment Associates, Inc. | Masked ion implant with fast-slow scan |
US8557692B2 (en) | 2010-01-12 | 2013-10-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET LDD and source drain implant technique |
TW201205648A (en) | 2010-06-23 | 2012-02-01 | Tokyo Electron Ltd | Plasma doping device, plasma doping method, method for manufacturing semiconductor element, and semiconductor element |
US8598025B2 (en) | 2010-11-15 | 2013-12-03 | Varian Semiconductor Equipment Associates, Inc. | Doping of planar or three-dimensional structures at elevated temperatures |
-
2013
- 2013-12-03 US US14/094,819 patent/US9373512B2/en not_active Expired - Fee Related
-
2014
- 2014-11-24 CN CN201410679836.9A patent/CN104681419B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206049A (ja) * | 1992-01-30 | 1993-08-13 | Matsushita Electric Ind Co Ltd | イオン打ち込み方法及びイオン打ち込み装置 |
US20050103998A1 (en) * | 2003-09-29 | 2005-05-19 | Somit Talwar | Laser thermal annealing of lightly doped silicon substrates |
JP2005268487A (ja) * | 2004-03-18 | 2005-09-29 | Fuji Electric Device Technology Co Ltd | 半導体素子の製造方法および半導体素子の製造装置 |
US20080044257A1 (en) * | 2006-08-15 | 2008-02-21 | Varian Semiconductor Equipment Associates, Inc. | Techniques for temperature-controlled ion implantation |
CN102768973A (zh) * | 2012-07-20 | 2012-11-07 | 清华大学 | 一种用于离子注入的激光辅助装置及其使用方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104752213A (zh) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
CN106856159A (zh) * | 2015-12-08 | 2017-06-16 | 英飞凌科技股份有限公司 | 用于离子注入的装置和方法 |
US10622268B2 (en) | 2015-12-08 | 2020-04-14 | Infineon Technologies Ag | Apparatus and method for ion implantation |
CN106271079A (zh) * | 2016-08-26 | 2017-01-04 | 深圳市联赢激光股份有限公司 | 一种电池注液孔的双波长复合焊接方法 |
CN107919270A (zh) * | 2017-11-03 | 2018-04-17 | 惠科股份有限公司 | 低温多晶硅薄膜及晶体管的制造方法 |
CN108198859A (zh) * | 2017-12-29 | 2018-06-22 | 睿力集成电路有限公司 | 鳍型半导体结构、晶体管结构及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US20150155172A1 (en) | 2015-06-04 |
US9373512B2 (en) | 2016-06-21 |
CN104681419B (zh) | 2018-03-09 |
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Effective date of registration: 20171207 Address after: Grand Cayman, Cayman Islands Applicant after: GLOBALFOUNDRIES INC. Address before: American New York Applicant before: Core USA second LLC Effective date of registration: 20171207 Address after: American New York Applicant after: Core USA second LLC Address before: American New York Applicant before: International Business Machines Corp. |
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