CN104655000A - Flexible active strain transducer structure and preparation method - Google Patents
Flexible active strain transducer structure and preparation method Download PDFInfo
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- CN104655000A CN104655000A CN201510052369.1A CN201510052369A CN104655000A CN 104655000 A CN104655000 A CN 104655000A CN 201510052369 A CN201510052369 A CN 201510052369A CN 104655000 A CN104655000 A CN 104655000A
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Abstract
The invention discloses a flexible active strain transducer structure and a preparation method. The preparation method comprises the following steps: taking a semi-conductive single-walled carbon nano tube as a channel material of an active field effect transistor, and taking a flexible piezoelectric thin-film material as a grid medium to prepare the flexible transistor; integrating a piezoelectric strain or pressure sensing unit to a preparation technology of a flexible active field effect transistor, so as to magnify and output a piezoelectric sensing signal through the carbon nano tube field effect transistor. Under the condition that the flexible strain or pressure transducer is controlled actively, the sensitivity of the piezoelectric transducer can be relatively high. The preparation method provided by the invention is a very convenient implementation method of large-area and large-scale application of the flexible active strain transducer.
Description
Technical field
The present invention relates to SIC (semiconductor integrated circuit) manufacturing technology field, more specifically, relate to a kind of flexible active strain transducer structure and preparation method.
Background technology
In recent years, along with developing rapidly of the wearable product of intelligence, flexible sensor becomes one of hot subject of researchist's exploration gradually.Wherein, flexible strain or pressure transducer especially receive increasing concern, and it potentially can be applied to and build man-made electronic's skin, has boundless market outlook at future health medical field.In addition, the core component in pliable pressure sensor or the display of flexible touch screen and intelligent robot application, these all indicate the potential using value of flexible strain or pressure transducer.
At present, the research for flexibility strain or pressure transducer based on multiple principle of work, can comprise condenser type, pressure resistance type, piezoelectric type etc.Wherein, based on the piezoelectric transducer of flexible piezoelectric membraneous material (as Kynoar and multipolymer thereof), to the strain of dynamic change or pressure, there is higher sensitivity and response time due to it and be widely studied.
Now commercially more existing flexibility based on Kynoar (PVDF) strain or pressure transducer raw product emerge; but these raw product are substantially all the passive devices based on capacity plate antenna structure, thus be difficult to the application realizing large area and scale.
Meanwhile, the research for the active strain of flexibility or pressure transducer is current still among exploration, and more result of study reports the active output and the control that utilize flexible organic transistor to realize sensor.But organic transistor is limited to the lower carrier mobility of organic semiconducting materials, be difficult to obtain high performance device property, thus greatly constrain the sensitivity of strain or pressure transducer.
Therefore, current researchist is still trying to explore suitable flexible crystalline tubular construction, to realize active output and the control of flexible strain or pressure transducer.
Summary of the invention
The object of the invention is to the above-mentioned defect overcoming prior art existence, a kind of flexible active strain transducer structure and preparation method are provided, by adopting semi-conductive single-walled carbon nanotubes as the channel material of flexible Divergence field effect transistor, and utilize flexible piezoelectric membraneous material to prepare flexible transistor as gate medium, thus realize output and the control of flexible active strain transducer signal by flexible active transistor.
For achieving the above object, technical scheme of the present invention is as follows:
A kind of flexible active strain transducer structure, comprise flexible piezoelectric formula sensing unit and be formed at the Divergence field effect transistor on organic flexible substrate, described flexible piezoelectric formula sensing unit is made up of flexible piezoelectric membraneous material, and form the gate medium of described field effect transistor, the raceway groove of described field effect transistor is by semi-conductive single-walled carbon nanotubes film, single semi-conductive single-walled carbon nanotubes or its parallel array are formed, two ends of described semi-conductive single-walled carbon nanotubes are coupled the source-drain electrode of described field effect transistor respectively, described field effect transistor has backgate type or top gate type metal gates.
Preferably, described flexible substrate adopts polyimide, PEN, dimethyl silicone polymer or Parylene material to make; Described flexible piezoelectric membraneous material comprises the Ferroelectric Copolymers of polyvinylidene fluoride or vinylidene fluoride; The material of described metal gates comprises Ti, Au, Al or Cr.
A preparation method for the active strain transducer structure of flexibility, comprises the following steps:
S01: provide a stiff base, described stiff base adopts spin coating liquid flexible material and the method or paste solid flexible MATERIALS METHODS under vacuum and prepare flexible substrate of being heating and curing;
S02: adopt photoetching and stripping technology to prepare backgate type metal gates on described flexible substrate surface;
S03: prepare patterned flexible piezoelectric membraneous material as gate dielectric layer on described grid;
S04: on described gate dielectric layer deposition of semiconductor single wall carbon nano-tube film or from other substrates shift grow formation single semi-conductive single-walled carbon nanotubes or its parallel array as channel material;
S05: prepare source-drain electrode on two ends of described semi-conductive single-walled carbon nanotubes;
S06: described flexible substrate peeled off from described rigid base foundation surface, forms the flexible active strain transducer structure of backgate type.
Preferably, in step S03, prepare patterned flexible piezoelectric membraneous material as gate dielectric layer, comprise the following steps:
S031: utilize dry film light-sensitive emulsion or photosensitive-ink and adopt photoetching process, defining gate dielectric layer litho pattern;
S032: the liquid piezoelectric film material of spin coating, and the liquid piezoelectric film material exceeding dry film light-sensitive emulsion or photosensitive-ink thickness is scraped off, be then heating and curing liquid piezoelectric film material;
S033: utilize the alkalescence liquid that removes photoresist to remove dry film light-sensitive emulsion or photosensitive-ink, form patterned flexible piezoelectric membraneous material gate dielectric layer.
Preferably, described piezoelectric film material comprises the Ferroelectric Copolymers of polyvinylidene fluoride or vinylidene fluoride.
Preferably, described flexible substrate adopts polyimide, PEN, dimethyl silicone polymer or Parylene material to make; The material of described metal gates comprises Ti, Au, Al or Cr.
A preparation method for the active strain transducer structure of flexibility, comprises the following steps:
S01: provide a stiff base, described stiff base adopts spin coating liquid flexible material and the method or paste solid flexible MATERIALS METHODS under vacuum and prepare flexible substrate of being heating and curing;
S02: described flexible substrate surface deposition semi-conductive single-walled carbon nanotubes film or from other substrates shift grow formation single semi-conductive single-walled carbon nanotubes or its parallel array as channel material;
S03: prepare source-drain electrode on two ends of described semi-conductive single-walled carbon nanotubes;
S04: prepare patterned flexible piezoelectric membraneous material as gate dielectric layer on described source-drain electrode;
S05: adopt photoetching and stripping technology to prepare top gate type metal gates on described gate dielectric layer;
S06: described flexible substrate peeled off from described rigid base foundation surface, forms the flexible active strain transducer structure of top gate type.
Preferably, in step S04, prepare patterned flexible piezoelectric membraneous material as gate dielectric layer, comprise the following steps:
S041: utilize dry film light-sensitive emulsion or photosensitive-ink and adopt photoetching process, defining gate dielectric layer litho pattern;
S042: the liquid piezoelectric film material of spin coating, and the liquid piezoelectric film material exceeding dry film light-sensitive emulsion or photosensitive-ink thickness is scraped off, be then heating and curing liquid piezoelectric film material;
S043: utilize the alkalescence liquid that removes photoresist to remove dry film light-sensitive emulsion or photosensitive-ink, form patterned flexible piezoelectric membraneous material gate dielectric layer.
Preferably, described piezoelectric film material comprises the Ferroelectric Copolymers of polyvinylidene fluoride or vinylidene fluoride.
Preferably, described flexible substrate adopts polyimide, PEN, dimethyl silicone polymer or Parylene material to make; The material of described metal gates comprises Ti, Au, Al or Cr.
As can be seen from technique scheme, the present invention is by utilizing semi-conductive single-walled carbon nanotubes as the channel material of Divergence field effect transistor, and utilize flexible piezoelectric membraneous material to prepare flexible transistor as gate medium, the strain of piezoelectric type or pressure sensitive unit are integrated in the preparation technology of flexible Divergence field effect transistor, the height achieving both is integrated, thus is able to piezoelectric sensing signal to carry out signal amplification and output by carbon nanotube field-effect transistor; The Single Walled Carbon Nanotube of semiconductive is owing to having very high carrier mobility, flexible field effect transistor prepared by it can show the device property more more excellent than organic transistor, while realization is to flexibility strain or pressure transducer Active control, also ensure that the sensitivity that piezoelectric transducer is higher.Therefore, the present invention is that the large area of this flexible active strain transducer and scale application provide implementation method very easily.
Accompanying drawing explanation
Fig. 1 is the perspective view of the active strain transducer structure of a kind of flexibility of one embodiment of the present invention;
Fig. 2 is the cross section structure schematic diagram of the active strain transducer structure of a kind of flexibility of one embodiment of the present invention;
Fig. 3 is the test philosophy schematic diagram of the active strain transducer structure of a kind of flexibility of one embodiment of the present invention;
Fig. 4 ~ Fig. 8 is process schematic representation corresponding to the preparation method of a kind of flexibility active strain transducer structure of one embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
It should be noted that, in following embodiment, when describing embodiments of the present invention in detail, in order to clearly represent structure of the present invention so that explanation, special to the structure in accompanying drawing not according to general scale, and carried out partial enlargement, distortion, transparent and simplify processes, therefore, should avoid being understood in this, as limitation of the invention.
In following the specific embodiment of the present invention, first refer to Fig. 1 and Fig. 2, Fig. 1 is the perspective view of the active strain transducer structure of a kind of flexibility of one embodiment of the present invention; Fig. 2 is the cross section structure schematic diagram of the active strain transducer structure of a kind of flexibility of one embodiment of the present invention.As depicted in figs. 1 and 2, the active strain transducer structure of flexibility of the present invention, the Divergence field effect transistor comprising flexible piezoelectric formula sensing unit 5 and be formed on organic flexible substrate 3.Described flexible piezoelectric formula sensing unit 5 is made up of flexible piezoelectric membraneous material, for realizing Piezoelectric strain transducer cellular construction.Described flexible piezoelectric formula sensing unit 5 also forms the gate medium 5 of described field effect transistor simultaneously.
Please continue to refer to Fig. 1 and Fig. 2.The channel material of described field effect transistor is made up of semi-conductive single-walled carbon nanotubes 6.Described semi-conductive single-walled carbon nanotubes 6 can adopt semi-conductive single-walled carbon nanotubes film, single semi-conductive single-walled carbon nanotubes or its parallel array form.Two ends of described semi-conductive single-walled carbon nanotubes 6 are coupled the source-drain electrode 8 and 7 of described field effect transistor respectively, for realizing straining or the reading of pressure sensor signal controls.
In the active strain transducer structure of the flexibility of the invention described above, described field effect transistor both can adopt backgate type metal gates 4 structure shown in Fig. 1, also can adopt top gate type metal gate structure.In fig. 2, in order to embody the flexible characteristic that the active strain transducer structure of the present invention has, specially curved shape is adopted to represent flexible substrate 3 and the gate medium 5 be made up of flexible piezoelectric membraneous material.
Please continue to refer to Fig. 1 and Fig. 2.In a specific embodiment of the present invention, described field effect transistor have employed backgate type metal gates 4 structure.Described flexible substrate 3 can adopt polyimide, PEN, dimethyl silicone polymer or Parylene material to make.As an example, described flexible substrate 3 adopts polyimide material to make.In the present embodiment, the channel material of the field effect transistor of above-mentioned based semiconductor Single Walled Carbon Nanotube adopts carbon nano-tube parallel array 6 to be prepared.Two end tops of described carbon nano-tube parallel array 6 are coupled respectively to the source-drain electrode 8,7 of described field effect transistor.The above-mentioned flexible piezoelectric formula sensing unit for forming described field effect transistor gate medium 5 simultaneously can adopt the flexible piezoelectric membraneous material of the Ferroelectric Copolymers (PVDF-TrFE) comprising polyvinylidene fluoride (PVDF) or vinylidene fluoride to make.In an embodiment of the present invention, the metal gates 4 of described field effect transistor can adopt the metal material preparation comprising Ti, Au, Al or Cr.
Please then consult Fig. 3, Fig. 3 is the test philosophy schematic diagram of the active strain transducer structure of a kind of flexibility of one embodiment of the present invention.Which show equivalent circuit structure and the test philosophy of the flexible active strain transducer device of the present invention.As shown in Figure 3, flexibility proposed by the invention active strain transducer structure is typical carbon nanotube field-effect transistor structure, comprises source S ource, drain D rain and grid G ate.Its principal character being different from traditional carbon nanotube field-effect transistor is that gate dielectric layer have employed flexible piezoelectric film Piezo Film material.Under normal circumstances, the grid of scene effect transistor and drain electrode apply voltage respectively, and by source ground GND, can the output current Ids of checkout area effect transistor with the variation characteristic of grid voltage Vgs, i.e. so-called transfer characteristics.And when this device is subject to additional strain or pressure signal, polarization charge will be produced on the upper and lower surface of piezoelectric membrane, this electric charge will make grid voltage Vgs change, and carry out quantization signifying further by the change of output current Ids, the ultimate principle of Here it is this flexible active strain transducer.Can find out, utilize this device architecture of carbon nanotube field-effect transistor, not only achieve the function of strain or pressure transducer, also achieve the Active control to sensor simultaneously.
Below by a specific embodiment, the preparation method of the active strain transducer structure of a kind of flexibility of the present invention is elaborated.Refer to Fig. 4 ~ Fig. 8, Fig. 4 ~ Fig. 8 is process schematic representation corresponding to the preparation method of a kind of flexibility active strain transducer structure of one embodiment of the present invention.Its display preparation one has the processing step corresponding to the active strain transducer structure of flexibility of back grid structure.This has the preparation method of the active strain transducer structure of flexibility of back grid structure, comprises the following steps:
S01: provide a stiff base, described stiff base adopts spin coating liquid flexible material and the method or paste solid flexible MATERIALS METHODS under vacuum and prepare flexible substrate of being heating and curing.
As shown in Figure 4, first, stiff base 1 prepares flexible substrate 3.During concrete enforcement, stiff base 1 can adopt Si substrate, SiO
2substrate, glass substrate, Ge substrate or Group III-V semiconductor substrate or its compound substrate etc.In the present embodiment, growth is selected to have SiO
2the Si substrate 1 of layer 2 is as stiff base.Prepared flexible substrate 3 material comprises polyimide, PEN, dimethyl silicone polymer or Parylene etc.The specific implementation method that stiff base is prepared flexible substrate can comprise: at the SiO of stiff base
2spin coating liquid flexible material on layer 2 is also heating and curing; Or under vacuum, solid flexible material is pasted on the SiO of stiff base
2layer 2 surface.In the present embodiment, adopt at SiO
2the liquid polyimide of spin coating on substrate 2 method be heating and curing, form flexible polyimide substrate 3.
S02: adopt photoetching and stripping technology to prepare backgate type metal gates on described flexible substrate surface.
As shown in Figure 5, then, backgate type metal gates 4 is prepared on described flexible substrate 3 surface, as described above flexible polyimide substrate 3 surface.During concrete enforcement, the method preparing back-gate electrode 4 can adopt the photoetching in conventional semiconductor processing and stripping technology to prepare metal gates.The material of used metal gates 4 comprises the metal material that Ti, Au, Al or Cr etc. are usually used in stripping technology.
S03: prepare patterned flexible piezoelectric membraneous material as gate dielectric layer on described grid.
As shown in Figure 6, next, back-gate electrode 4 is prepared patterned flexible piezoelectric membraneous material gate dielectric layer 5.During concrete enforcement, implement by following steps: first, utilize dry film light-sensitive emulsion or photosensitive-ink and conventional lithography process, form gate dielectric layer litho pattern in device surface definition; Then, the liquid piezoelectric film material of spin coating, and the liquid piezoelectric film material exceeding dry film light-sensitive emulsion or photosensitive-ink thickness is scraped off, and the liquid piezoelectric film material that is heating and curing; Finally, recycle the alkalescence liquid that removes photoresist and remove dry film light-sensitive emulsion or photosensitive-ink.Here why to, using patterned flexible piezoelectric membraneous material as gate dielectric layer 5, be the normal extraction in order to ensure back-gate electrode 4.As an embodiment, the above-mentioned flexible piezoelectric membraneous material for forming described field effect transistor gate medium 5 can adopt the Ferroelectric Copolymers (PVDF-TrFE) comprising polyvinylidene fluoride (PVDF) or vinylidene fluoride to make.
S04: on described gate dielectric layer deposition of semiconductor single wall carbon nano-tube film or from other substrates shift grow formation single semi-conductive single-walled carbon nanotubes or its parallel array as channel material.
As shown in Figure 7, next, at gate dielectric layer 5 surface deposition semi-conductive single-walled carbon nanotubes 6.During concrete enforcement, the method of deposition of semiconductor Single Walled Carbon Nanotube 6 can adopt the method deposition of semiconductor carbon nano-tube film by chemical modification self assembly, or the single semi-conductive single-walled carbon nanotubes that other substrates have grown or its parallel array is transferred to gate dielectric layer 5 surface.In the present embodiment, the semi-conductive single-walled carbon nanotubes of institute's deposit adopts and the carbon nano-tube parallel array 6 grown in quartz substrate is transferred to described gate dielectric layer 5 surface and is formed.
S05: prepare source-drain electrode on two ends of described semi-conductive single-walled carbon nanotubes.
S06: described flexible substrate peeled off from described rigid base foundation surface, forms the flexible active strain transducer structure of backgate type.
As shown in Figure 8, next needs realize, and are prepare source-drain electrode 8 and 7 on two ends of good semi-conductive single-walled carbon nanotubes such as its parallel array 6 of deposit.Finally, by the SiO of flexible substrate 3 from stiff base
2layer 2 sur-face peeling (as shown by arrow indication), namely forms the flexible active strain transducer structure of backgate type.During concrete enforcement, the method preparing source-drain electrode 8,7 can adopt the photoetching in conventional semiconductor processing and stripping technology to prepare metal source and drain electrodes equally, and the material of used source and drain metal electrode comprises the metal material that Ti, Au, Al or Cr etc. are usually used in stripping technology.
In another embodiment of the present invention, the preparation method of the active strain transducer structure of flexibility of the present invention, also comprises the active strain transducer structure of flexibility that preparation one has top gate structure.This has the preparation method of the active strain transducer structure of flexibility of top gate structure, comprises the following steps:
S01: provide a stiff base, described stiff base adopts spin coating liquid flexible material and the method or paste solid flexible MATERIALS METHODS under vacuum and prepare flexible substrate of being heating and curing;
S02: described flexible substrate surface deposition semi-conductive single-walled carbon nanotubes film or from other substrates shift grow formation single semi-conductive single-walled carbon nanotubes or its parallel array as channel material;
S03: prepare source-drain electrode on two ends of described semi-conductive single-walled carbon nanotubes;
S04: prepare patterned flexible piezoelectric membraneous material as gate dielectric layer on described source-drain electrode;
S05: adopt photoetching and stripping technology to prepare top gate type metal gates on described gate dielectric layer;
S06: described flexible substrate peeled off from described rigid base foundation surface, forms the flexible active strain transducer structure of top gate type.
Wherein, in above-mentioned steps S04, prepare patterned flexible piezoelectric membraneous material as gate dielectric layer, specifically comprise the following steps:
First, utilize dry film light-sensitive emulsion or photosensitive-ink and conventional lithography process, form gate dielectric layer litho pattern in device surface definition.
Then, the liquid piezoelectric film material of spin coating, and the liquid piezoelectric film material exceeding dry film light-sensitive emulsion or photosensitive-ink thickness is scraped off, and the liquid piezoelectric film material that is heating and curing.
Finally, the recycling alkalescence liquid that removes photoresist removes dry film light-sensitive emulsion or photosensitive-ink, forms patterned flexible piezoelectric membraneous material gate dielectric layer.
As an embodiment, the above-mentioned flexible piezoelectric membraneous material for forming gate medium can adopt the Ferroelectric Copolymers (PVDF-TrFE) comprising polyvinylidene fluoride (PVDF) or vinylidene fluoride to make.Described flexible substrate can adopt polyimide, PEN, dimethyl silicone polymer or Parylene material to make; Such as, can be polyimide flex substrate.The material of described metal gates can comprise the metal material that Ti, Au, Al or Cr etc. are usually used in stripping technology.
For the active strain transducer structure of the flexibility preparing top gate structure, have the active strain transducer structure of flexibility of back grid structure with preparation, its difference is only the difference of processing step.Only need make the appropriate adjustments processing step, i.e. deposition of semiconductor Single Walled Carbon Nanotube first on flexible substrates, then first prepares source-drain electrode, then prepares patterned flexible piezoelectric membraneous material as gate dielectric layer, finally preparation top gate electrode, can form top gate device structure.Those skilled in the art can understand, and no longer repeat detailed technological process at this.
In sum, active strain transducer structure of flexibility proposed by the invention and preparation method thereof, semi-conductive single-walled carbon nanotubes and flexible piezoelectric membraneous material are integrated in flexible Divergence field effect transistor structure, namely utilize semi-conductive single-walled carbon nanotubes as channel material, utilize flexible piezoelectric membraneous material as gate medium, the strain of piezoelectric type or pressure sensitive unit are integrated in the preparation technology of flexible Divergence field effect transistor, thus piezoelectric sensing signal is carried out signal amplification and output by carbon nanotube field-effect transistor.Utilize the flexible field effect transistor prepared by semi-conductive single-walled carbon nanotubes can show the device property more more excellent than organic transistor, while realization is to flexibility strain or pressure transducer Active control, also ensure that the sensitivity that piezoelectric transducer is higher.In addition, active strain transducer structure of flexibility proposed by the invention and preparation method thereof is also for the large area of this sensor and scale application provide implementation method very easily.
Above-describedly be only the preferred embodiments of the present invention; described embodiment is also not used to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization instructions of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (10)
1. the active strain transducer structure of flexibility, it is characterized in that, comprise flexible piezoelectric formula sensing unit and be formed at the Divergence field effect transistor on organic flexible substrate, described flexible piezoelectric formula sensing unit is made up of flexible piezoelectric membraneous material, and form the gate medium of described field effect transistor, the raceway groove of described field effect transistor is by semi-conductive single-walled carbon nanotubes film, single semi-conductive single-walled carbon nanotubes or its parallel array are formed, two ends of described semi-conductive single-walled carbon nanotubes are coupled the source-drain electrode of described field effect transistor respectively, described field effect transistor has backgate type or top gate type metal gates.
2. the active strain transducer structure of flexibility according to claim 1, is characterized in that, described flexible substrate adopts polyimide, PEN, dimethyl silicone polymer or Parylene material to make; Described flexible piezoelectric membraneous material comprises the Ferroelectric Copolymers of polyvinylidene fluoride or vinylidene fluoride; The material of described metal gates comprises Ti, Au, Al or Cr.
3. a preparation method for the active strain transducer structure of flexibility, is characterized in that, comprise the following steps:
S01: provide a stiff base, described stiff base adopts spin coating liquid flexible material and the method or paste solid flexible MATERIALS METHODS under vacuum and prepare flexible substrate of being heating and curing;
S02: adopt photoetching and stripping technology to prepare backgate type metal gates on described flexible substrate surface;
S03: prepare patterned flexible piezoelectric membraneous material as gate dielectric layer on described grid;
S04: on described gate dielectric layer deposition of semiconductor single wall carbon nano-tube film or from other substrates shift grow formation single semi-conductive single-walled carbon nanotubes or its parallel array as channel material;
S05: prepare source-drain electrode on two ends of described semi-conductive single-walled carbon nanotubes;
S06: described flexible substrate peeled off from described rigid base foundation surface, forms the flexible active strain transducer structure of backgate type.
4. preparation method according to claim 3, is characterized in that, in step S03, prepares patterned flexible piezoelectric membraneous material as gate dielectric layer, comprises the following steps:
S031: utilize dry film light-sensitive emulsion or photosensitive-ink and adopt photoetching process, defining gate dielectric layer litho pattern;
S032: the liquid piezoelectric film material of spin coating, and the liquid piezoelectric film material exceeding dry film light-sensitive emulsion or photosensitive-ink thickness is scraped off, be then heating and curing liquid piezoelectric film material;
S033: utilize the alkalescence liquid that removes photoresist to remove dry film light-sensitive emulsion or photosensitive-ink, form patterned flexible piezoelectric membraneous material gate dielectric layer.
5. the preparation method according to claim 3 or 4, is characterized in that, described piezoelectric film material comprises the Ferroelectric Copolymers of polyvinylidene fluoride or vinylidene fluoride.
6. preparation method according to claim 3, is characterized in that, described flexible substrate adopts polyimide, PEN, dimethyl silicone polymer or Parylene material to make; The material of described metal gates comprises Ti, Au, Al or Cr.
7. a preparation method for the active strain transducer structure of flexibility, is characterized in that, comprise the following steps:
S01: provide a stiff base, described stiff base adopts spin coating liquid flexible material and the method or paste solid flexible MATERIALS METHODS under vacuum and prepare flexible substrate of being heating and curing;
S02: described flexible substrate surface deposition semi-conductive single-walled carbon nanotubes film or from other substrates shift grow formation single semi-conductive single-walled carbon nanotubes or its parallel array as channel material;
S03: prepare source-drain electrode on two ends of described semi-conductive single-walled carbon nanotubes;
S04: prepare patterned flexible piezoelectric membraneous material as gate dielectric layer on described source-drain electrode;
S05: adopt photoetching and stripping technology to prepare top gate type metal gates on described gate dielectric layer;
S06: described flexible substrate peeled off from described rigid base foundation surface, forms the flexible active strain transducer structure of top gate type.
8. preparation method according to claim 7, is characterized in that, in step S04, prepares patterned flexible piezoelectric membraneous material as gate dielectric layer, comprises the following steps:
S041: utilize dry film light-sensitive emulsion or photosensitive-ink and adopt photoetching process, defining gate dielectric layer litho pattern;
S042: the liquid piezoelectric film material of spin coating, and the liquid piezoelectric film material exceeding dry film light-sensitive emulsion or photosensitive-ink thickness is scraped off, be then heating and curing liquid piezoelectric film material;
S043: utilize the alkalescence liquid that removes photoresist to remove dry film light-sensitive emulsion or photosensitive-ink, form patterned flexible piezoelectric membraneous material gate dielectric layer.
9. the preparation method according to claim 7 or 8, is characterized in that, described piezoelectric film material comprises the Ferroelectric Copolymers of polyvinylidene fluoride or vinylidene fluoride.
10. preparation method according to claim 7, is characterized in that, described flexible substrate adopts polyimide, PEN, dimethyl silicone polymer or Parylene material to make; The material of described metal gates comprises Ti, Au, Al or Cr.
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