CN104638076B - A kind of LED epitaxial structure for increasing LED backward impedances and preparation method thereof - Google Patents
A kind of LED epitaxial structure for increasing LED backward impedances and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 22
- 239000001257 hydrogen Substances 0.000 claims abstract description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000003780 insertion Methods 0.000 claims abstract description 5
- 230000037431 insertion Effects 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 46
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- 230000004888 barrier function Effects 0.000 claims description 13
- 150000002431 hydrogen Chemical class 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention provides a kind of LED structure and preparation method of increase LED backward impedances, comprise the following steps：Substrate, high temperature pretreatment in a hydrogen atmosphere, in substrate surface successively grown buffer layer, non-doped gan layer, n-type GaN layer, Multiple-quantum active layer, p-type GaN layer and P type contact layer；Described multiple quantum well active layer is made up of at least two sections multiple quantum well active layers, multiple quantum well active layer section mixes GaN or AlGaN layer with insertion the non-of low temperature in the middle of section, the present invention can effectively increase LED backward impedance by the non-GaN or AlGaN that mixes inserted in multiple quantum well active layer, LED reverse leakage is reduced, increases LED reliability.
Description
Technical field
The invention belongs to LED epitaxy technologies growth field, more particularly to a kind of epitaxial structure for improving LED luminance and making
Method.
Background technology
Light emitting diode (LED, Light Emitting Diode) has the advantages that long-lived, energy-saving and environmental protection, in recent years,
The fields such as LED is shown in large-sized solor, traffic lights and illumination have played more and more important effect.But will be full-color
Screen display and lighting field are more widely applied, and LED backward impedance needs further lifting.
Can typically have the positive sense of current with reverse both direction during diode operation, additional backward voltage exceedes
During a certain numerical value, reverse current can increase suddenly, and this phenomenon is referred to as electrical breakdown.The critical voltage of electrical breakdown is caused to be referred to as two poles
Pipe breakdown reverse voltage.And LED backward impedances refer to resistance of the diode operation when reverse, generally with reverse current for-
Backward voltage during 0.5uA represents that symbol is represented with Vz.Reversely the size in resistance hole represents LED reliability.
Multi-quantum well active region is LED nucleus, generally alternately stacked by multigroup InGaN SQWs and GaN barrier layer
Constitute.InGaN quantum well layers are grown in GaN barrier layer, because InGaN is differed with GaN lattice constant than larger, In components 1%
Caused lattice mismatch is more than 1%, and mismatch stress can introduce V-type defect in high In contents epitaxial layer, carrys out relaxation because lattice loses
With caused strain.Research shows that V-type defect originates from the enrichment that there is In components near threading dislocation, defect, these
Defect can cause electric leakage, reduce LED impedance.If when LED operation is in forward direction, leaked electricity smaller, smaller is influenceed on electrical property,
But when LED operation is when reverse, the influence now leaked electricity is larger, has a strong impact on LED reliability, reduces LED reliability.
Usually ensure LED brightness, the cycle of 3-20 MQW is grown, when the SQW for growing into some cycles
Afterwards, there is V-type defect in surface, if continued growth multiple quantum well active layer, and V-type defect may proceed to become big, so as to have a strong impact on
LED backward impedance；Existing patent is less to consider this problem, is all to continue with growing multi-quantum well active region, such as patent
201410369108.8 MQW include InGaN/InGaN MQW and InGaN/AlGaN MQW, but simply consider that MQW is divided to for two
Section, to improve the concentration of electronics and hole in SQW, a portion SQW uses AlGaN barrier layer, patent
201310652175.6 also in this way, using AlGaN as barrier layer, so as to reduce the Droop negative effects of device, but do not consider
To LED inverse impedance characteristics.
The content of the invention
In view of the defect that above-mentioned prior art is present, the purpose of the present invention is to propose to a kind of LED backward impedances that increase
LED epitaxial structure and preparation method thereof.Patent 201410369108.8 and 201310652175.6 is all simply mentioned to be made with AlGaN
For the barrier layer of MQW, and it is to be repeated cyclically structure, it is entirely different with the present invention.
The purpose of the present invention, will be achieved by the following technical programs：
It is a kind of to increase on the LED epitaxial structure of LED backward impedances, including a substrate, the substrate growth successively and have slow
Layer, the non-GaN layer mixed and n-type GaN layer, multiple quantum well active layer, p-type GaN and P type contact layer are rushed, the MQW is active
Layer is made up of at least two sections multiple quantum well active layers, and growth has the non-doped gan layer of low temperature between two sections of multiple quantum well active layers
Or AlGaN layer.
Preferably, the low temperature range is 700-1000 DEG C.
Preferably, a kind of preparation method of described LED epitaxial structure for increasing LED backward impedances, includes following step
Suddenly：
S1, in a hydrogen atmosphere high-temperature process substrate；
S2, in substrate surface grown buffer layer, the non-GaN layer and n-type GaN layer mixed successively of processing；
S3, the cyclical growth multiple quantum well active layer in n-type GaN layer；
S4, grows p-type GaN and P type contact layer successively in multiple quantum well active layer；
Multiple quantum well active layer in the S3 is made up of at least two sections multiple quantum well active layers, multiple quantum well active layer section
GaN or AlGaN layer are mixed with insertion the non-of low temperature in the middle of section.
Preferably, multiple quantum well active layer growth comprises the following steps in the S3：
S31, in the case where atmosphere is nitrogen environment, growth thickness is 1-5 nm InGaN quantum well layers, the flow of the nitrogen
For 20-70 L/min；
S32, in the case where atmosphere is the atmosphere of nitrogen or hydrogen nitrogen mixed gas, on the InGaN quantum well layers grown, continues to give birth to
Long thickness is 5-25 nm GaN quantum barrier layers；
S33, repeats S31, S32 to grow multiple quantum well active layer；
S34, turns off MO sources, and switching atmosphere is pure hydrogen, carries out hydrogen etching, the flow of the nitrogen is 20-70 L/
Min, etch period is 0-10 min；
S35, opens MO sources, thick growth 5-25 nm low-temperature gan layer or AlGaN layer；
S36, switches atmosphere, in the case where atmosphere is nitrogen environment, and growth thickness is 1-5 nm InGaN quantum well layers, described
The flow of nitrogen is 20-70 L/min；
S37, in the case where atmosphere is the atmosphere of nitrogen or hydrogen nitrogen mixed gas, on the InGaN quantum well layers grown, continues to give birth to
Long thickness is 5-25 nm GaN quantum barrier layers；
S38, such repeated growth InGaN quantum well layers, GaN quantum barrier layers formation multiple quantum well active layer.
Preferably, the growth conditions of the S31- S38 is 700-1000 DEG C of temperature, pressure 50-500 Torr.
The present invention protrudes effect：
(1) after first paragraph multi-quantum well active region has been grown, MO sources are turned off, switching atmosphere is pure hydrogen, carries out hydrogen
Under etching, hydrogen atmosphere, the In of V-type fault location enrichment can be dissociated, the reduction of In components.
(2) after the etching of a large amount of hydrogen, the In components reduction of V-type fault location, or even be totally consumed, now open
MO sources, thick growth 5-25 nm low-temperature gan layer or AlGaN layer；Growth temperature is relatively low, is 700-1000 DEG C, under low temperature, and Ga is former
The transfer ability of son and Al atoms is weak, V-type defect can be effectively filled up, so as to increase LED backward impedance；On this basis
The multiple quantum well active layer that can be lighted with continued growth, if temperature is higher than 1000 DEG C, the transfer ability of Ga atoms and Al atoms
It is relatively strong, then for V-type defect to fill up effect poor.
(3) epitaxial wafer is fabricated to after 10 mil*16 mil chips, and the backward impedance of chip adds 100%, chip reverse 5
Backward voltage under uA electric currents rises to 40V from 20V.
Just accompanying drawing in conjunction with the embodiments below, the embodiment to the present invention is described in further detail, so that of the invention
Technical scheme is more readily understood, grasped.
Brief description of the drawings
Fig. 1 is the LED epitaxial structure schematic diagram in the present embodiment.
Wherein, 1 is substrate, and 2 be low temperature buffer layer, and 3 be non-doped gan layer, and 4 be n-type GaN layer, and 5 be first paragraph Multiple-quantum
Trap, 6 be the AlGaN layer of low temperature, and 7 be second segment MQW, and 8 be p-type GaN layer, and 9 be P type contact layer.
Embodiment
The invention provides a kind of LED epitaxial structure and preparation method of increase LED backward impedances, this method is used
The MOCVD device of Aixtron companies carries out epitaxial growth, uses NH3, TMGa/TEGa, TMIn, TMAl respectively as N, Ga,
In, Al source.
A kind of LED epitaxial structure of increase LED backward impedances, including substrate, cushion, non-doped gan layer, n-type GaN layer,
Multiple quantum well active layer, p-type GaN layer and P type contact layer；Described multiple quantum well active layer is active by least two sections MQWs
Layer is constituted, and multiple quantum well active layer section mixes GaN or AlGaN layer with insertion the non-of low temperature in the middle of section.Generally reach actual hair
Light demand, using 3-20 InGaN/GaN multiple quantum well active layer.
Above-described LED epitaxial structure preparation method, comprises the following steps：
S1, in a hydrogen atmosphere high-temperature process substrate；
S2, in substrate surface grown buffer layer, the non-GaN layer and n-type GaN layer mixed successively of processing；
S3, the cyclical growth multiple quantum well active layer in n-type GaN layer；
S4, grows p-type GaN and P type contact layer successively in multiple quantum well active layer；
Multiple quantum well active layer in the S3 is made up of at least two sections multiple quantum well active layers, multiple quantum well active layer section
GaN or AlGaN layer are mixed with insertion the non-of low temperature in the middle of section.
It is particularly due to, it is generally the case that LED electric leakage is all missed by V-type hole, and V-type hole causes LED's reverse
Impedance is smaller, therefore blocks V-type hole, you can increase LED reverse resistance hole, lifts LED reliability；We are by growing GaN
Or AlGaN, these V-types hole is filled up, the electric leakage in V-type hole is reduced, because InGaN quantum trap growth temperature is relatively low, therefore these are inserted
The necessary grown at low temperature of GaN or AlGaN entered, to prevent destruction of the high temperature to SQW, influences the efficiency of SQW.
Under low temperature, Ga atomic migrations can block V-type defect apart from small, so as to improve backward impedance；And AlGaN effects
More preferably；Al atomic migration abilities are weak, can also block V-type hole, prevent electric leakage, strengthen LED backward impedance, lift LED electricity
Reliability.
The GaN or AlGaN of low temperature are smaller to positive impedance influences, and LED can be equivalent to ideal diode and one big electricity
The parallel circuit of resistance, big resistance is leak channel.When reversely, ideal diode infinite, therefore electric current can pass through electric leakage
Passage, leak channel determines backward impedance, and under usual -40V voltages, electric current is only 0.5uA；When positive, voltage is more than 2.8V
Afterwards, ideal diode is turned on, and resistance is smaller, electric current will not by leak channel, therefore leak channel impedance to LED forward direction
Impedance does not interfere with LED positive performance without influence.
Described multiple quantum well active layer growth comprises the following steps：
S31, in the case where atmosphere is nitrogen environment, growth thickness is 1-5 nm InGaN quantum well layers, the flow of the nitrogen
For 20-70 L/min；
Under S32, atmosphere of the switching atmosphere for nitrogen or hydrogen nitrogen mixed gas, on the InGaN quantum well layers grown, continue
Growth thickness is 5-25 nm GaN quantum barrier layers；Such repeated growth multiple quantum well active layer.
S33, turns off MO sources, and switching atmosphere is pure hydrogen, carries out hydrogen etching, the flow of the hydrogen is 20-70 L/
Min, etch period is 0-10 min；
S34, opens MO sources, thick growth 5-25 nm low-temperature gan layer or AlGaN layer；
S35, switches atmosphere, in the case where atmosphere is nitrogen environment, and growth thickness is 1-5 nm InGaN quantum well layers, described
The flow of nitrogen is 20-70 L/min；
Under S36, atmosphere of the switching atmosphere for nitrogen or hydrogen nitrogen mixed gas, on the InGaN quantum well layers grown, continue
Growth thickness is 5-25 nm GaN quantum barrier layers；Such repeated growth multiple quantum well active layer.
The growth conditions of the S31- S36 is 700-1000 DEG C of temperature, pressure 50-500 Torr.Prior art is given birth to
The epitaxial wafer that long epitaxial wafer and the present invention grows is fabricated to after 10 mil*16 mil chips together, and the backward impedance of chip increases
The backward voltage under 100%, the reverse 5 uA electric currents of chip has been added to rise to 40V from 20V.
It is proposed that MQW is divided to for two sections, the number of plies of two sections of MQWs can be the same or different, in first paragraph amount
After sub- trap has grown, the undoped GaN or AlGaN layer of one layer of low temperature of growth, under low temperature, Ga atomic migrations are closer apart from small
Three dimensional growth, can block V-type defect, and Al atomic migration abilities are weak, can also block V-type hole, therefore, it is possible to prevent electric leakage, enhancing
LED backward impedance, lifts LED electrical reliability.
The present invention still has numerous embodiments, all technical sides formed by all use equivalents or equivalent transformation
Case, is within the scope of the present invention.
Claims (3)
- Increase on the LED epitaxial structures of LED backward impedances, including a substrate, the substrate growth successively 1. a kind of and have slow Rush layer, the non-GaN layers mixed and GaN layers of n types, multiple quantum well active layer, p type GaN and p type contact layers, the Multiple-quantum Trap active layer is made up of at least two sections multiple quantum well active layers, and growth has low temperature is non-to mix between two sections of multiple quantum well active layers GaN layers or AlGaN layers；A kind of preparation method of above-described LED epitaxial structures for increasing LED backward impedances, bag Containing following steps：S1, in a hydrogen atmosphere high-temperature process substrate；S2, in substrate surface grown buffer layer, non-GaN layers of the GaN layers and n types mixed successively of processing；S3, the cyclical growth multiple quantum well active layer on n type GaN layers；S4, grows p type GaN and p type contact layers successively in multiple quantum well active layer；It is characterized in that：Multiple quantum well active layer in the S3 is made up of at least two sections multiple quantum well active layers, MQW Insertion the non-of low temperature mixes GaN or AlGaN layers in the middle of active interval and section；Multiple quantum well active layer growth includes in the S3 Following steps：S31, in the case where atmosphere is nitrogen environment, growth thickness is 1-5 nm InGaN quantum well layers, and the flow of the nitrogen is 20-70 L/min ；S32, in the case where atmosphere is the atmosphere of nitrogen or hydrogen nitrogen mixed gas, on the InGaN quantum well layers grown, continued growth Thickness is 5-25 nm GaN quantum barrier layers；S33, repeats S31, S32 to grow multiple quantum well active layer；S34, turns off MO sources, and switching atmosphere is pure hydrogen, carries out hydrogen etching, the flow of the nitrogen is 20-70 L/min, Etch period is 0-10 min；S35, opens MO sources, GaN layers or AlGaN layers thick growth 5-25 nm of low temperature；S36, switches atmosphere, in the case where atmosphere is nitrogen environment, and growth thickness is 1-5 nm InGaN quantum well layers, the nitrogen The flow of gas is 20-70 L/min；S37, in the case where atmosphere is the atmosphere of nitrogen or hydrogen nitrogen mixed gas, on the InGaN quantum well layers grown, continued growth Thickness is 5-25 nm GaN quantum barrier layers；S38, such repeated growth InGaN quantum well layers, GaN quantum barrier layers formation multiple quantum well active layer.
- 2. a kind of as described in claim 1 increase the LED epitaxial structures of LED backward impedances, it is characterised in that：It is described low Warm scope is 700-1000 DEG C.
- 3. a kind of preparation method of LED epitaxial structures for increasing LED backward impedances according to claim 1, it is special Levy and be：The growth conditions of the S31- S38 is 700-1000 DEG C of temperature, pressure 50-500 Torr.
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| CN101359711A (en) * | 2008-09-25 | 2009-02-04 | 上海蓝光科技有限公司 | Green light LED |
| CN101488548A (en) * | 2009-02-27 | 2009-07-22 | 上海蓝光科技有限公司 | LED in high In ingredient multiple InGaN/GaN quantum wells structure |
| CN103633214A (en) * | 2013-12-09 | 2014-03-12 | 湘能华磊光电股份有限公司 | InGaN/GaN superlattice buffer layer structure, preparation method of InGaN/GaN superlattice buffer layer structure, and LED chip comprising InGaN/GaN superlattice buffer layer structure |
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| CN101359711A (en) * | 2008-09-25 | 2009-02-04 | 上海蓝光科技有限公司 | Green light LED |
| CN101488548A (en) * | 2009-02-27 | 2009-07-22 | 上海蓝光科技有限公司 | LED in high In ingredient multiple InGaN/GaN quantum wells structure |
| CN103633214A (en) * | 2013-12-09 | 2014-03-12 | 湘能华磊光电股份有限公司 | InGaN/GaN superlattice buffer layer structure, preparation method of InGaN/GaN superlattice buffer layer structure, and LED chip comprising InGaN/GaN superlattice buffer layer structure |
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