CN104637898B - The heat-conductive composite material layer and electronic device conductive structure packaging method of integrated circuit device - Google Patents
The heat-conductive composite material layer and electronic device conductive structure packaging method of integrated circuit device Download PDFInfo
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- CN104637898B CN104637898B CN201410738605.0A CN201410738605A CN104637898B CN 104637898 B CN104637898 B CN 104637898B CN 201410738605 A CN201410738605 A CN 201410738605A CN 104637898 B CN104637898 B CN 104637898B
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- boron nitride
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- alkene
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Abstract
The invention discloses a kind of heat-conductive composite material layer of integrated circuit device and electronic device conductive structure packaging methods, the boron nitride alkene and graphene of single layer, bilayer, few layer are prepared using chemical vapor deposition or solvent stripping means, by corresponding transfer techniques, successively it is transferred in the hot localised points of power chip.Using boron nitride alkene as the insulating protective layer of circuit, while itself and the good heat-conductive characteristic of graphene are played, radiating requirements can be met in the high-power electronic device of high heat flux density.
Description
Technical field
The present invention relates to a kind of microelectronic device package structure and preparation method, especially microelectronic component conductive structure and
Preparation method, applied to meeting technical field of heat dissipation in the high-power electronic device of high heat flux density.
Background technique
It becomes faster as electronic component and system are continuously getting smaller and smaller, heat treatment and reliability become the pass for influencing their service life
Key problem.The heat management of the high hot-fluid hot spot in part is the key that high-power electronic device, and inconsistent heat dissipation will cause in chip
Special area overheat, influences the reliability of electronic system performance and electronic device.In recent years, graphene is due to strong sp2Key is brought
The thermal conductivity 5300W/mK of superelevation is suggested and can be used as a kind of promising heat sink material.Hexagonal boron nitride has and graphene
Covalent bond and layer in hexagoinal lattice or even similar strong face in very similar layer structure, including same interlamellar spacing and face
Between weak Van der Waals force.However it is different from graphene again, hexagonal boron nitride has stronger heat resistance, chemical stability, insulating properties
And deep-UV light-emitting performance, thermal conductivity be quartz ten times, thermal expansion coefficient is equivalent to quartz, be it is the smallest in ceramics,
It is a kind of insulator that thermal conductivity is best.
Usual chip surface serves as insulating protective layer with silica, but its thickness will affect the heat dissipation effect of graphene,
SiO2Layer is too thick to hinder hot spot heat to be effectively conducted to graphene layer, too thin and be easy to make metallic circuit and graphene layer to contact
And there is short circuit, and SiO2Material conducts heat rate is lower, influences the heat dissipation effect of microelectronic component.
Summary of the invention
In order to solve prior art problem, it is an object of the present invention to overcome the deficiencies of the prior art, and to provide one kind
The heat-conductive composite material layer and electronic device conductive structure packaging method of integrated circuit device, are applied to electricity for two-dimensional layer material
The radiator structure of son encapsulation, is applied to the higher IC chip surface of heat flow density, forms the high heat-delivery surface of insulation, solves
The certainly heat dissipation problem of the local high hot-fluid hot spot of high power device.
Purpose is created to reach foregoing invention, the present invention adopts the following technical solutions:
A kind of heat-conductive composite material layer of integrated circuit device, using the boron nitride alkene two-dimensional layer of single layer, bilayer or few layer
Shape material and graphene two-dimensional layer material using boron nitride alkene as the insulating protective layer of integrated circuit device, then will use stone
The graphene layer of black alkene two-dimensional layer material preparation is transferred to the upper surface of boron nitride alkene layer, to form integrated circuit device
Heat-conductive composite material layer.
A kind of electronic device conductive structure packaging method of the heat-conductive composite material layer using integrated circuit device of the present invention,
Using chemical vapour deposition technique or the heat-conductive composite material layer of solvent stripping method preparation integrated circuit device, when using chemical gaseous phase
When sedimentation prepares the heat-conductive composite material layer of integrated circuit device, specific process step are as follows:
(1) in copper foil surface growing boron nitride alkene layer, boron nitride alkene/copper foil binder course is formed, then in boron nitride alkene/copper
The polymethyl methacrylate of spin coating thickness 300nm is as film support layer on foil binder course, obtain polymethyl methacrylate/
Boron nitride alkene/copper foil structure coating systems；
(2) polyethylene terephthalate for using 200 μm of thickness, adheres to the polymethylacrylic acid prepared in step (1)
It is used as auxiliary frame on methyl esters/boron nitride alkene/copper foil structure coating systems, forms polyethylene terephthalate/polymethylacrylic acid
Methyl esters/boron nitride alkene/copper foil structure coating systems；
(3) it uses the NaOH solution that molar concentration is 0.25 M as electrolyte, DC power cathode is connected in step
Suddenly polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems the copper foil prepared in (2)
On, while DC power anode being connected to other platinum electrode, DC power supply electric current is risen into about 1A, after cell reaction 30s
Copper foil is removed from polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems, is obtained
Polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene structure sheaf；
(4) by the polyethylene terephthalate/polymethyl methacrylate prepared in step (3)/boron nitride alkene structure
Layer is transferred in objective chip, binds directly boron nitride alkene layer with objective chip, then remove auxiliary frame polyethylene to benzene two
Acid esters forms polymethyl methacrylate/boron nitride alkene binder course in objective chip；
(5) to the polymethyl methacrylate/boron nitride alkene binder course prepared in step (4), poly- first is removed with acetone
Base methyl acrylate obtains exposed boron nitride alkene layer in objective chip；
(6) boron nitride alkene is replaced with graphene, is repeated in step (1)-(3), obtain polyethylene terephthalate/poly-
Methyl methacrylate/graphene-structured layer, then by polyethylene terephthalate/polymethyl methacrylate/graphene-structured
Layer is transferred on the boron nitride alkene layer on the mark chip prepared in the step (5), make graphene layer directly with boron nitride alkene layer knot
It closes, forms polyethylene terephthalate/polymethyl methacrylate/graphene/boron nitride alkene structure coating systems, then use and step
Suddenly (4) identical method removes auxiliary frame, obtains polymethyl methacrylate/graphene/boron nitride alkene composite construction layer, most
Polymethyl methacrylate is removed using method identical with step (5) afterwards, graphene and nitrogen are finally obtained in objective chip
Change the composite layer of boron alkene.
When using the heat-conductive composite material layer of solvent stripping method preparation integrated circuit device, specific process step are as follows:
A. the boron nitride nanosheet obtained with acetone cleaning solvent stripping method, removal remaining organic solvent when removing；
B. it by after the boron nitride nanosheet prepared in step a cleaning, is put into the ethyl alcohol of set amount, and add setting ratio
The polyvinylpyrrolidone of example forms mixed liquor, then to mixed liquor ultrasonic disperse 30 minutes, obtains boron nitride alkene dispersion liquid；
C. the boron nitride alkene dispersion liquid prepared in stepb is spun on the hot spot of objective chip, then 60oUnder C
It is dry, boron nitride alkene layer is formed in objective chip；
D. boron nitride alkene is replaced with graphene, is repeated in step a and step b, obtains graphene dispersing solution；Then in step
Spin coating graphene dispersing solution in the boron nitride alkene layer surface of the objective chip prepared in rapid c, then use the identical drying side step c
Method finally obtains the composite layer of graphene and boron nitride alkene on power chip.
As currently preferred technical solution, boron nitride alkene or graphene are transferred in objective chip, pass through by repetition
The transfer number for controlling boron nitride alkene and graphene is prepared on power chip by the boron nitride alkene layer of single layer, bilayer or few layer
The composite layer formed with graphene layer.
The present invention compared with prior art, has following obvious prominent substantive distinguishing features and remarkable advantage:
1. the present invention plays it and passes with the good heat of graphene using boron nitride alkene as the insulating protective layer of circuit
Performance is led, meets radiating requirements in the high-power electronic device of high heat flux density；
2. the present invention is higher by ten times of boron nitride alkene as the insulating protective layer of circuit using thermal conductivity, then by high thermal conductivity
And the similar graphene of structure is transferred to upper surface, can greatly improve heat dissipation effect, hot-fluid hot spot high for the part of chip
It is very effective thermal management scheme；
3. the boron nitride alkene and stone of the single layer that the present invention prepares chemical vapor deposition or solvent stripping method, bilayer, few layer
Black alkene is successively transferred in the hot localised points of power chip by corresponding transfer techniques, using boron nitride alkene as the exhausted of circuit
Edge protective layer, while itself and the good heat-conductive characteristic of graphene are played, it can be in the high-power electronic device of high heat flux density
In meet radiating requirements.
Detailed description of the invention
Fig. 1 is example of the embodiment of the present invention one using the chip sample of chemical vapour deposition technique preparation in transfer process
Figure.
Fig. 2 is test effect data comparison of the embodiment of the present invention one using the chip sample of chemical vapour deposition technique preparation
Figure.
Fig. 3 is exemplary diagram of the embodiment of the present invention two using the chip sample of solvent stripping method preparation in transfer process.
Specific embodiment
Details are as follows for the preferred embodiment of the present invention:
Embodiment one:
In the present embodiment, referring to Fig. 1 and Fig. 2, a kind of electronic device conductive structure packaging method, using chemical vapor deposition
Area method prepares the heat-conductive composite material layer of integrated circuit device, specific process step are as follows:
(1) in copper foil surface growing boron nitride alkene layer, boron nitride alkene/copper foil binder course is formed, then in boron nitride alkene/copper
The polymethyl methacrylate (PMMA) that spin coating a layer thickness is 300nm on foil binder course is used as film support layer, obtains PMMA/
BN/Cu structure coating systems；
(2) using the polyethylene terephthalate with a thickness of 200 μm, the PMMA/BN/Cu prepared in step (1) is adhered to
It is used as auxiliary frame on structure coating systems, forms frame/PMMA/BN/Cu structure coating systems；
(3) it uses the NaOH solution that molar concentration is 0.25 M as electrolyte, DC power cathode is connected in step
Suddenly on the frame/PMMA/BN/Cu structure coating systems copper foil prepared in (2), while DC power anode being connected to other
DC power supply electric current is risen to about 1A by platinum electrode, by copper foil from frame/PMMA/BN/Cu structure coating systems after cell reaction 30s
Upper removing obtains frame/PMMA/BN structure sheaf；
(4) frame prepared in step (3) /PMMA/BN structure sheaf is transferred in objective chip, makes boron nitride alkene layer
It is bound directly with objective chip, then removes auxiliary frame polyethylene terephthalate, formed PMMA/BN in objective chip and combine
Layer；
(5) to the polymethyl methacrylate/boron nitride alkene binder course prepared in step (4), poly- first is removed with acetone
Base methyl acrylate obtains exposed boron nitride alkene layer in objective chip；
(6) boron nitride alkene is replaced with graphene, is repeated in step (1)-(3), obtain polysiloxane framework/PMMA/G structure sheaf,
Polysiloxane framework/PMMA/G is transferred to again on the boron nitride alkene layer on the mark chip prepared in step (5), keeps graphene layer direct
In conjunction with boron nitride alkene layer, polysiloxane framework/PMMA/G/BN structure coating systems are formed, then using identical method is removed with step (4)
Auxiliary frame obtains PMMA/G/BN composite construction layer, finally removes polymethylacrylic acid using method identical with step (5)
Methyl esters finally obtains the composite layer of graphene and boron nitride alkene in objective chip.
In the present embodiment, referring to Fig. 1 and Fig. 2, chemical vapour deposition technique is used, firstly, having boron nitride alkene in growth
Then one strata methyl methacrylate of copper foil surface spin coating uses polyethylene terephthalate, adheres on PMMA/BN/Cu and make
For auxiliary frame, use NaOH solution as electrolyte, DC power cathode is met into frame/PMMA/BN/Cu, anode connects platinum electricity
Frame/PMMA/BN and Cu points are opened after reaction, frame/PMMA/BN are transferred in objective chip, then remove auxiliary frame by pole
Frame removes polymethyl acrylate with acetone, and boron nitride alkene is combined by Van der Waals force and objective chip.Then it repeats same
The step of, transfer graphene to BN/ objective chip surface.
Embodiment two:
The present embodiment is basically the same as the first embodiment, and is particular in that:
In the present embodiment, referring to Fig. 3, a kind of electronic device conductive structure packaging method, using chemical vapour deposition technique
Prepare the heat-conductive composite material layer of integrated circuit device, specific process step are as follows:
A. the boron nitride nanosheet obtained with acetone cleaning solvent stripping method, removal remaining organic solvent when removing；
B. it by after the boron nitride nanosheet prepared in step a cleaning, is put into the ethyl alcohol of set amount, and add setting ratio
The polyvinylpyrrolidone (PVP) of example formed mixed liquor, then to mixed liquor ultrasonic disperse 30 minutes, obtained the dispersion of boron nitride alkene
Liquid；
C. the boron nitride alkene dispersion liquid prepared in stepb is spun on the hot spot of objective chip, then 60oUnder C
It is dry, boron nitride alkene layer is formed in objective chip；
D. boron nitride alkene is replaced with graphene, is repeated in step a and step b, obtains graphene dispersing solution；Then in step
Spin coating graphene dispersing solution in the boron nitride alkene layer surface of the objective chip prepared in rapid c, then use the identical drying side step c
Method finally obtains the composite layer of graphene and boron nitride alkene on power chip.
In the present embodiment, referring to Fig. 3, using solvent stripping method, the nitrogen that is obtained first with acetone cleaning solvent stripping method
Change boron nanometer sheet, the boron nitride nanosheet after cleaning is put into suitable ethyl alcohol by removal remaining organic solvent when removing, and
A certain proportion of PVP is added boron nitride alkene dispersion liquid is spun on the hot spot of power chip after ultrasonic, it is dry, then repeat
Graphene is spun to boron nitride alkene surface by same step.
The embodiment of the present invention is illustrated above in conjunction with attached drawing, but the present invention is not limited to the above embodiments, it can be with
The purpose of innovation and creation according to the present invention makes a variety of variations, under the Spirit Essence and principle of all technical solutions according to the present invention
The changes, modifications, substitutions, combinations, simplifications done should be equivalent substitute mode, as long as meeting goal of the invention of the invention, only
Otherwise it is former away from the technology of the heat-conductive composite material layer of integrated circuit device of the present invention and electronic device conductive structure packaging method
Reason and inventive concept, belong to protection scope of the present invention.
Claims (2)
1. a kind of electronic device conductive structure packaging method of the heat-conductive composite material layer using integrated circuit device, feature exist
In using the boron nitride alkene two-dimensional layer material and graphene two-dimensional layer material of single or double layer, using boron nitride alkene as collection
At the insulating protective layer of circuit devcie, then boron nitride alkene will be transferred to using the graphene layer of graphene two-dimensional layer material preparation
It is removed to form the heat-conductive composite material layer of integrated circuit device using chemical vapour deposition technique or solvent the upper surface of layer
The heat-conductive composite material layer of method preparation integrated circuit device；Integrated circuit is prepared using chemical vapour deposition technique or solvent stripping method
The heat-conductive composite material layer of device, when using the heat-conductive composite material layer of chemical vapour deposition technique preparation integrated circuit device,
Specific process step are as follows:
(1) in copper foil surface growing boron nitride alkene layer, boron nitride alkene/copper foil binder course is formed, then in boron nitride alkene/copper foil knot
The polymethyl methacrylate of spin coating thickness 300nm on layer is closed as film support layer, obtains polymethyl methacrylate/nitridation
Boron alkene/copper foil structure coating systems；
(2) polyethylene terephthalate for using 200 μm of thickness, adheres to the polymethylacrylic acid prepared in the step (1)
It is used as auxiliary frame on methyl esters/boron nitride alkene/copper foil structure coating systems, forms polyethylene terephthalate/polymethylacrylic acid
Methyl esters/boron nitride alkene/copper foil structure coating systems；
(3) it uses the NaOH solution that molar concentration is 0.25M as electrolyte, DC power cathode is connected in the step
(2) on the polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems copper foil prepared in,
DC power anode is connected to other platinum electrode simultaneously, DC power supply electric current is risen into about 1A, by copper after cell reaction 30s
Foil is removed from polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems, obtains poly- second
Alkene terephthalate/polymethyl methacrylate/boron nitride alkene structure sheaf；
(4) polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene structure that will be prepared in the step (3)
Layer is transferred in objective chip, binds directly boron nitride alkene layer with objective chip, then remove auxiliary frame polyethylene to benzene two
Acid esters forms polymethyl methacrylate/boron nitride alkene binder course in objective chip；
(5) to the polymethyl methacrylate/boron nitride alkene binder course prepared in the step (4), poly- first is removed with acetone
Base methyl acrylate obtains exposed boron nitride alkene layer in objective chip；
(6) boron nitride alkene is replaced with graphene, is repeated in the step (1)-(3), obtain polyethylene terephthalate/poly-
Methyl methacrylate/graphene-structured layer, then by polyethylene terephthalate/polymethyl methacrylate/graphene-structured
Layer is transferred on the boron nitride alkene layer on the mark chip prepared in the step (5), make graphene layer directly with boron nitride alkene
Layer combines, and forms polyethylene terephthalate/polymethyl methacrylate/graphene/boron nitride alkene structure coating systems, then use
Identical method removes auxiliary frame with the step (4), and it is compound to obtain polymethyl methacrylate/graphene/boron nitride alkene
Structure sheaf finally removes polymethyl methacrylate using method identical with the step (5), finally in objective chip
To the composite layer of graphene and boron nitride alkene；
When using the heat-conductive composite material layer of solvent stripping method preparation integrated circuit device, specific process step are as follows:
A. the boron nitride nanosheet obtained with acetone cleaning solvent stripping method, removal remaining organic solvent when removing；
B. it by after the boron nitride nanosheet prepared in the step a cleaning, is put into the ethyl alcohol of set amount, and add setting ratio
The polyvinylpyrrolidone of example forms mixed liquor, then to mixed liquor ultrasonic disperse 30 minutes, obtains boron nitride alkene dispersion liquid；
C. on the hot spot for the boron nitride alkene dispersion liquid prepared in the step b being spun to objective chip, then at 60 DEG C
It is dry, boron nitride alkene layer is formed in objective chip；
D. boron nitride alkene is replaced with graphene, is repeated in the step a and step b, obtains graphene dispersing solution；Then in institute
Spin coating graphene dispersing solution in the boron nitride alkene layer surface of the objective chip prepared in step c is stated, then identical using the step c
Drying means, the composite layer of graphene and boron nitride alkene is finally obtained on power chip.
2. electronic device conductive structure packaging method according to claim 1, it is characterised in that: repeat boron nitride alkene or
Graphene is transferred in objective chip, by control boron nitride alkene and graphene transfer number, on power chip preparation by
The composite layer that the boron nitride alkene layer and graphene layer of single or double layer are formed.
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| CN109824043B (en) * | 2017-11-23 | 2022-01-14 | 中国科学院金属研究所 | Method for improving speed of bubbling transfer of graphene by regulating flexibility of transfer medium layer |
| EP3654372B1 (en) | 2018-11-13 | 2021-04-21 | IMEC vzw | Method of forming an integrated circuit with airgaps and corresponding integrated circuit |
| CN113441094B (en) * | 2021-05-21 | 2023-06-20 | 安徽大学 | Boron alkene-graphene composite aerogel and preparation and application thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103787288A (en) * | 2014-01-22 | 2014-05-14 | 山东大学 | Method for preparing boron nitride alkene nanosheet |
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| US20110163298A1 (en) * | 2010-01-04 | 2011-07-07 | Chien-Min Sung | Graphene and Hexagonal Boron Nitride Devices |
| CN103887703B (en) * | 2014-03-27 | 2017-01-04 | 北京牡丹电子集团有限责任公司 | A kind of method making semiconductor laser thermal sediment |
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| CN103787288A (en) * | 2014-01-22 | 2014-05-14 | 山东大学 | Method for preparing boron nitride alkene nanosheet |
Non-Patent Citations (3)
| Title |
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| Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers;Zheng Liu;《NANO LETTERS》;20111130;2032-2037 |
| Preparation, Characterization, Thermal, and Dielectric;Seyfullah Madakbas;《Advances in Polymer Technology》;20140604;21438 |
| Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices;Ki Kang Kim;《ACS nano》;20120630;8583-8590 |
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