CN104614117A - Piezoresistive pressure meter chip structure and preparation method thereof - Google Patents
Piezoresistive pressure meter chip structure and preparation method thereof Download PDFInfo
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- CN104614117A CN104614117A CN201510020963.2A CN201510020963A CN104614117A CN 104614117 A CN104614117 A CN 104614117A CN 201510020963 A CN201510020963 A CN 201510020963A CN 104614117 A CN104614117 A CN 104614117A
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Abstract
The invention discloses a piezoresistive pressure meter chip structure and a preparation method thereof. The piezoresistive pressure meter chip structure comprises a pressure-sensitive resistor, a heavy doping contact area, a metal lead, a silicon strain film, a glass base, and a cavity formed between the silicon strain film and the glass base. According to the piezoresistive pressure meter chip structure, a pressure sensor of the structure has the advantages of being simple in process and small in chip size by being compared with the structure of the typical device; meanwhile, the anodic bonding and wafer grinding technologies are performed; the design processing method is compatible with the processing technology of the standard silicon piezoresistive pressure sensor; the device processing cost is low; the yield is high.
Description
Technical field
The invention belongs to microelectromechanical systems (MEMS) sensor design field, relate to a kind of MEMS piezoresistive pressure transducer, and adopt MEMS technological method for processing on single disk, make the method for this pressure transducer.
Background technology
MEMS (MicroElectroMechanical System) i.e. microelectromechanical systems is emerging research in new high-tech field interdisciplinary.Manufacture piezoresistive pressure sensor due to its outstanding precision and fiduciary level and relatively cheap manufacturing cost based on MEMS technology to be widely used in the market in modern times.Found the piezoresistive characteristic of silicon materials since mid-term the 1950's, silica-based piezoresistive pressure sensor is just widely used.The principle of work of piezoresistive transducer makes four presser sensor resistance by the mode of diffusion or ion implantation at area of stress concentration on a square or circular silicon strain film, and four resistance interconnection form resistance bridges.Be applied on silicon strain films when there being ambient pressure, voltage dependent resistor (VDR) region produces stress because strain films is bending, by the piezoresistive characteristic of voltage dependent resistor (VDR), be the change of resistance value by stress transmission, finally by resistance bridge, the change of resistance value is converted to output voltage, by carrying out demarcating the measurement that can realize pressure to output voltage and force value.The structure of typical piezoresistive pressure sensor mainly comprises silicon strain films, glass base and the closed cavity between silicon strain films and glass base, the mode that the silicon chip of (110) crystal face is corroded by anisotropic wet carries out making silicon strain films and cavity, and completing the airtight of cavity with glass by anode linkage, the side of cavity is (111) crystal face.Above-mentioned pressure gauge sensor structure has that technique is simple, technology maturation and be easy to the advantage of mass production, and is therefore widely used.The shortcoming that said structure exists is the inclination angle that the side of cavity and silicon strain films exist 54.7 degree, and the size required for cavity bottom is far longer than the size of silicon strain films, and the restriction that chip physical size is subject to the problems referred to above cannot be accomplished very little; The restriction that simultaneously thickness of chip is subject to silicon wafer thickness cannot be thinned to ideal thickness, limits the application of piezoresistive pressure sensor in some thickness-sensitive fields of chip.
Summary of the invention
The object of the invention is to for the problems referred to above, propose a kind of new-type piezoresistive pressure gage chip structure and preparation method thereof.The pressure transducer of this structure is compared typical device structure and is had the advantage that technique is simple, chip size is little; Adopt anode linkage and wafer thinning technique, the processing technology of this design job operation and standard body silicon piezoresistance type pressure sensor is compatible, and device fabrication cost is low, has higher yield rate simultaneously.
For achieving the above object, the technical solution used in the present invention is as follows:
A kind of piezoresistive pressure gage chip structure, comprise voltage dependent resistor (VDR), heavy doping contact region, metal lead wire, silicon strain films, glass base and the cavity between silicon strain films and glass base, described silicon strain films is with glass base anode linkage and on nonbonding face, has carried out the silicon chip of reduction processing, described cavity is the sealed cavity being positioned at glass base and being formed by the anode linkage of glass base and silicon strain films, the bonding face of described silicon strain films has voltage dependent resistor (VDR), heavy doping contact region, fairlead, metal lead wire and metal pad, described voltage dependent resistor (VDR) is sealed in above-mentioned cavity, described metal lead wire and metal pad pass through fairlead, heavy doping contact region and voltage dependent resistor (VDR) realize electric signal and are connected.
Further, the bonding face of described silicon strain films has lead-in wire groove, described metal lead wire and metal pad are positioned at lead-in wire groove, and described metal lead wire and metal pad fit together with glass base after anode linkage completes.
Further, the shape of the movable area of described silicon strain films is determined by the opening figure of described glass base internal cavity, is determined by the figure of the reticle designed.
Preferably, the opening of described glass base internal cavity is square or circular.
A preparation method for piezoresistive pressure gage chip structure, its step comprises:
1) voltage dependent resistor (VDR) and heavy doping contact region is made at front side of silicon wafer;
2) fairlead, lead-in wire groove, metal lead wire and metal pad is made at front side of silicon wafer;
3) cavity is made in glass sheet front;
4) carried out aiming at anode linkage with the front of glass sheet in the front of silicon chip, form silex glass bonding pad, described voltage dependent resistor (VDR) is sealed in cavity;
5) reduction processing is carried out to the nonbonding face of silicon chip;
6) photoetching and etching are carried out to the silicon face of silex glass bonding pad, until expose the metal pad of below;
7) scribing, chip manufacturing completes.
Above-mentioned steps 1) make voltage dependent resistor (VDR) and heavy doping contact region by the mode of ion implantation or Impurity Diffusion at front side of silicon wafer.
Above-mentioned steps 2) in, in described lead-in wire groove, make metal lead wire and metal pad.
Further, the material of described metal lead wire and metal pad can adopt aluminium or chromium-Jin, titanium-Jin, chromium-platinum, the combination of the metal materials such as titanium-platinum.
Above-mentioned steps 3) cavity can be made by the mode of dry etching or wet etching on described glass sheet.
After completing cavity making, cavity area on the glass sheet can be made the through hole running through glass sheet by the mode of glass punching, can realize after completing above-mentioned subsequent technique for the tonometric piezoresistive pressure gage chip structure of differential pressure.
Above-mentioned steps 5) reduction processing can be carried out by the nonbonding face of mode to silicon chip of wet etching (isotropic etch and anisotropic etch) or chemically mechanical polishing.
Can according to device layout require carry out reduction processing to the nonbonding face of silicon chip, with reach device layout requirement sensitivity.
The present invention is that the design and processes personnel in MEMS field provide a kind of pressure gauge chip structure adopting anode linkage and wafer thinning technique and preparation method thereof, and the pressure gauge chip structure of this method processing has stable performance, higher reliability of technology and less chip size and chip cost.
Specifically, the present invention has following advantage:
1) pressure gauge chip structure of the present invention ensure that while completing cavities seals voltage dependent resistor (VDR) region and external environment are isolated, and has saved under packaging cost also enables chip be operated in harsh environment;
2) pressure gauge chip structure of the present invention, because cavity is made on glass sheet, not by the restriction in silicon chip crystal orientation, there is not the problem that the chip size that causes due to silicon chip anisotropic etch increases, this chip structure effectively can reduce chip size, reduces the cost of chip;
3) thickness of pressure gauge chip structure of the present invention is by the impact of silicon wafer thickness, can obtain less chip gross thickness, can the application space of significantly extended chip;
4) present invention employs silex glass anode linkage, there is not the requirement of the high-temperature in silicon silicon high temperature bonding technology, bonded interface high-flatness.Anode linkage equipment has higher popularity rate, and flatness and the particle contamination at the low and para-linkage interface of bonding temperature are less demanding, effectively can improve the process yield of chip.
5) pressure gauge chip structure of the present invention completes the connection of electric signal by fairlead, metal lead wire, metal pad and the voltage dependent resistor (VDR) be made on silicon chip, completely compatible with traditional handicraft, can ensure higher reliability of electrical connection; Metal lead wire and metal pad are made in the groove of silicon chip simultaneously, reduce the difference in height of metal and silicon chip, effectively can avoid the impact of the metal pair anode linkage quality of bonded interface.
Accompanying drawing explanation
Fig. 1 is pressure gauge chip structure process flow diagram in specific embodiment, wherein:
The schematic diagram that Fig. 1 (a) is chip substrate;
Fig. 1 (b) makes the schematic diagram of voltage dependent resistor (VDR) for ion implantation mode;
Fig. 1 (c) is for making the schematic diagram of heavy doping contact region;
Fig. 1 (d) is for making the schematic diagram of fairlead;
Fig. 1 (e) is for making the schematic diagram of lead-in wire groove;
Fig. 1 (f) is for filling fairlead, making metal lead wire and metal pad schematic diagram;
Fig. 1 (g) is the schematic diagram of glass sheet photoetching cavity;
Fig. 1 (h) completes the schematic diagram of cavitation corrosion for glass sheet;
Fig. 1 (i) makes for glass sheet completes and runs through the schematic diagram of the through hole of glass sheet;
The schematic diagram that Fig. 1 (j) is front side of silicon wafer and glass sheet front anode linkage;
Fig. 1 (k) completes the schematic diagram of reduction processing for silicon chip;
The silicon face that Fig. 1 (l) is silex glass bonding pad completes the schematic diagram of photoetching;
The manometric schematic diagram of Fig. 1 (m) for completing.
In figure: 1-silicon chip; 2-monox; 3-voltage dependent resistor (VDR); 4-heavy doping contact region; 5-fairlead; 6-lead-in wire groove; 7-metal lead wire and metal pad; 8-photoresist; 9-glass sheet; 10-cavity; 11-run through the through hole of glass sheet; 12-wire bonding window.
Embodiment
Below by specific embodiment, and coordinate accompanying drawing, the present invention is described further.As shown in Figure 1, the concrete manufacturing process of the new-type piezoresistive pressure sensor chip structure of employing anode linkage and wafer thinning technique is:
A) standby sheet: monocrystalline silicon substrate is as the substrate 1 of chip, and substrate thickness is 400 μm, substrate surface silica 2, and silicon oxide thickness is
as shown in Fig. 1 (a);
B) adopt standard pressure drag technique on silicon chip, make voltage dependent resistor (VDR) 3 and heavy doping contact region 4, as shown in Fig. 1 (b), (c), comprising: photoetching Dan Peng district; RIE (reactive ion etching) SiO
2 ion implantation B
+; Boron advances; Photoetching concentrated boron area, RIE SiO
2; Ion implantation B
+; Boron advances;
C) make fairlead (i.e. contact hole) 5, as shown in Fig. 1 (d), comprising:
LPCVD (low-pressure chemical vapor phase deposition) SiO
2 front lithography fair lead; RIE SiO
2
D) front makes metal lead wire groove 6, as shown in Fig. 1 (e), comprising: photolithographic wire lead slot; Etching SiO
2
E) in metal lead wire groove 6, metal lead wire and metal pad 7 is made, as shown in Fig. 1 (f), sputtering Al,
mEMS Al alloy;
F) photoetching on glass sheet 9, dry etching cavity 10, as shown in Fig. 1 (g), (h);
G) glass sheet makes the through hole 11 running through glass sheet, as shown in Fig. 1 (i);
H) silex glass anode linkage, as shown in Fig. 1 (j), the face comprising voltage dependent resistor (VDR) and metal lead wire in silicon chip carries out aiming at bonding with the face comprising cavity in glass sheet, and voltage dependent resistor (VDR) is sealed in cavity;
I) wafer thinning, as shown in Fig. 1 (k), the mode of wafer thinning is chemically mechanical polishing, and the thickness after wafer thinning is 15 μm;
J) photoetching is carried out and etch silicon 15 μm and monox to the silicon face of silex glass bonding pad
until expose the metal pad of below, as shown in Fig. 1 (l), (m).
Be that flat film does example explanation with the strain films of sensor in above-described embodiment, those skilled in the art is to be understood that, in the scope not departing from essence of the present invention, certain change and amendment can be made for the structure choice of strain films in the present invention, as adopt etching mode makes beam on film, island structure is modified to strain films.The preparation method of its silicon strain films is also not limited to content disclosed in embodiment, such as strain films also can adopt the mode of the mode of KOH solution (or TMAH solution) anisotropic etch or HNA solution (hydrofluorite adds that nitric acid adds the mixed solution that three kinds, glacial acetic acid is sour, can produce isotropic corrosive effect to monocrystalline silicon) isotropic etch to carry out thinning obtaining to silicon chip.Described metal lead wire and metal electrode are also not limited to the metallic aluminium adopted in embodiment, chromium-Jin, titanium-Jin, chromium-platinum, and the combination of the metal materials such as titanium-platinum equally can as metal lead wire and metal electrode material.Protection scope of the present invention should be as the criterion with described in claims.
Claims (10)
1. a piezoresistive pressure gage chip structure, comprise voltage dependent resistor (VDR), heavy doping contact region, metal lead wire, silicon strain films, glass base and the cavity between silicon strain films and glass base, described silicon strain films is with glass base anode linkage and on nonbonding face, has carried out the silicon chip of reduction processing, described cavity is the sealed cavity being positioned at glass base and being formed by the anode linkage of glass base and silicon strain films, the bonding face of described silicon strain films has voltage dependent resistor (VDR), heavy doping contact region, fairlead, metal lead wire and metal pad, described voltage dependent resistor (VDR) is sealed in above-mentioned cavity, described metal lead wire and metal pad pass through fairlead, heavy doping contact region and voltage dependent resistor (VDR) realize electric signal and are connected.
2. piezoresistive pressure gage chip structure as claimed in claim 1, it is characterized in that, the bonding face of described silicon strain films has lead-in wire groove, described metal lead wire and metal pad are positioned at lead-in wire groove, and described metal lead wire and metal pad fit together with glass base after anode linkage completes.
3. piezoresistive pressure gage chip structure as claimed in claim 1, it is characterized in that, the shape of the movable area of described silicon strain films is determined by the opening figure of described glass base internal cavity.
4. a preparation method for piezoresistive pressure gage chip structure, its step comprises:
1) voltage dependent resistor (VDR) and heavy doping contact region is made at front side of silicon wafer;
2) fairlead, lead-in wire groove, metal lead wire and metal pad is made at front side of silicon wafer;
3) cavity is made in glass sheet front;
4) carried out aiming at anode linkage with the front of glass sheet in the front of silicon chip, form silex glass bonding pad, described voltage dependent resistor (VDR) is sealed in cavity;
5) reduction processing is carried out to the nonbonding face of silicon chip;
6) photoetching and etching are carried out to the silicon face of silex glass bonding pad, until expose the metal pad of below;
7) scribing, chip manufacturing completes.
5. preparation method as claimed in claim 4, is characterized in that, step 1) make voltage dependent resistor (VDR) and heavy doping contact region by the mode of ion implantation or Impurity Diffusion at front side of silicon wafer.
6. preparation method as claimed in claim 4, is characterized in that, step 2) in, in described lead-in wire groove, make metal lead wire and metal pad.
7. preparation method as claimed in claim 4, it is characterized in that, the material of described metal lead wire and metal pad is selected from aluminium or chromium-Jin, titanium-Jin, chromium-platinum, titanium-platinum.
8. preparation method as claimed in claim 4, is characterized in that, step 3) on described glass sheet, make cavity by the mode of dry etching or wet etching.
9. preparation method as claimed in claim 4, is characterized in that, step 5) carry out reduction processing by the nonbonding face of mode to silicon chip of wet etching or chemically mechanical polishing.
10. preparation method as claimed in claim 4, is characterized in that, also comprise: after completing cavity making, cavity area on the glass sheet makes the through hole running through glass sheet by the mode of glass punching, realizes being used for the tonometric pressure gauge chip of differential pressure.
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| CN201510020963.2A CN104614117A (en) | 2015-01-15 | 2015-01-15 | Piezoresistive pressure meter chip structure and preparation method thereof |
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| CN201510020963.2A CN104614117A (en) | 2015-01-15 | 2015-01-15 | Piezoresistive pressure meter chip structure and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105547533A (en) * | 2015-12-09 | 2016-05-04 | 北京大学 | Pressure gauge chip structure and preparation method thereof |
| CN113776703A (en) * | 2021-06-30 | 2021-12-10 | 深圳市美思先端电子有限公司 | MEMS piezoresistive pressure sensor with linear gradient beam structure and preparation method thereof |
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| JPH10160606A (en) * | 1996-11-28 | 1998-06-19 | Matsushita Electric Works Ltd | Semiconductor pressure sensor and fabrication thereof |
| CN102980712A (en) * | 2012-12-10 | 2013-03-20 | 厦门大学 | Chip-type single-resistor piezoresistive pressure sensor with self-package structure |
| CN103335753A (en) * | 2013-06-05 | 2013-10-02 | 厦门大学 | An ultramicro pressure sensor chip with a silicon-glass base-beam film structure and a manufacturing method |
| CN103344374A (en) * | 2013-06-26 | 2013-10-09 | 夏云 | Hidden-type MEMS pressure sensor sensitive chip and manufacturing method thereof |
| CN104062045A (en) * | 2014-06-13 | 2014-09-24 | 浙江工业大学 | Piezoresistive pressure sensor and manufacturing method thereof |
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2015
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Patent Citations (5)
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|---|---|---|---|---|
| JPH10160606A (en) * | 1996-11-28 | 1998-06-19 | Matsushita Electric Works Ltd | Semiconductor pressure sensor and fabrication thereof |
| CN102980712A (en) * | 2012-12-10 | 2013-03-20 | 厦门大学 | Chip-type single-resistor piezoresistive pressure sensor with self-package structure |
| CN103335753A (en) * | 2013-06-05 | 2013-10-02 | 厦门大学 | An ultramicro pressure sensor chip with a silicon-glass base-beam film structure and a manufacturing method |
| CN103344374A (en) * | 2013-06-26 | 2013-10-09 | 夏云 | Hidden-type MEMS pressure sensor sensitive chip and manufacturing method thereof |
| CN104062045A (en) * | 2014-06-13 | 2014-09-24 | 浙江工业大学 | Piezoresistive pressure sensor and manufacturing method thereof |
Non-Patent Citations (1)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105547533A (en) * | 2015-12-09 | 2016-05-04 | 北京大学 | Pressure gauge chip structure and preparation method thereof |
| CN113776703A (en) * | 2021-06-30 | 2021-12-10 | 深圳市美思先端电子有限公司 | MEMS piezoresistive pressure sensor with linear gradient beam structure and preparation method thereof |
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Application publication date: 20150513 |
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