CN104062045A - Piezoresistive pressure sensor and manufacturing method thereof - Google Patents
Piezoresistive pressure sensor and manufacturing method thereof Download PDFInfo
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- CN104062045A CN104062045A CN201410264486.XA CN201410264486A CN104062045A CN 104062045 A CN104062045 A CN 104062045A CN 201410264486 A CN201410264486 A CN 201410264486A CN 104062045 A CN104062045 A CN 104062045A
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Abstract
The invention discloses an MEMS piezoresistive pressure sensor based on anodic bonding packaging and a manufacturing method of the piezoresistive acceleration sensor. The sensor is of a first bonding glass-silicon substrate-second bonding glass sandwich structure. A diaphragm with light boron diffusion piezoresistance is manufactured on a silicon substrate by adopting the surface micromachining technology and the bulk micromachining technology to serve as a piezoresistive pressure sensor structure, wafer level packaging is conducted by using the anodic bonding technology twice, silicon-glass anodic bonding is adopted in first anodic bonding, and the noncrystalline silicon-glass anodic bonding technology is used in second anodic bonding, so that the defects that in the traditional silicon-glass anodic bonding process, a PN junction on a silicon surface is prone to being punctured and ionic contamination is prone to being generated are overcome. The pressure sensor is novel in structure, low in weight, small in size, good in stability, high in anti-pollution capacity and good in reliability, and has certain application prospects in the fields such as aviation, military, automobiles and environment monitoring.
Description
(1) technical field
The present invention relates to pressure transducer and manufacture method thereof in MEMS (MEMS (micro electro mechanical system)) sensor field, be specifically related to a kind of MEMS piezoresistive pressure sensor and manufacture method thereof based on anode linkage encapsulation.
(2) background technology
MEMS pressure transducer is because volume is little, quality is light, cost is low, high reliability, receive much concern in fields such as Aero-Space, environmental monitoring, military affairs, automobiles, the Aero-Space that especially device volume, quality and reliability had high requirements and weapons scientific domain have very large application prospect.MEMS piezoresistive pressure sensor volume is little, good linearity, the scope of gaging pressure is also wide, direct voltage output signal, compare capacitance pressure transducer,, do not need complicated circuit interface, cheap when production in enormous quantities, duplication of production is good, can directly measure continuous pressure and steady state pressure.But, one of the complexity of applied environment and problem of mainly considering while badly causing the reliability of MEMS pressure transducer to become gradually device design, sensor long-time stability and reliability are extremely important for device application.Based on this, be necessary to invent a kind of MEMS piezoresistive pressure sensor chip, to ensure the Stability and dependability of pressure transducer in the time applying.
(3) summary of the invention
The object of this invention is to provide a kind of MEMS piezoresistive pressure sensor chip based on anode linkage encapsulation technology, surperficial micro-processing, body micro fabrication, to ensure the reliability of pressure transducer in the time applying.
For achieving the above object, the present invention adopts following technical scheme:
Based on a MEMS piezoresistive pressure sensor for anode linkage encapsulation, described sensor has first key combined glass glass-silica-based the-second bonding glass sandwich structure, described silica-based inside is formed with piezoresistive pressure sensor diaphragm, silica-based front is formed with the pressure drag region of piezoresistive pressure sensor, the pressure drag region of described piezoresistive pressure sensor is positioned at the upper surface of piezoresistive pressure sensor diaphragm, and be injected with light boron and form 4 light boron diffusion pressure drags, the inside of simultaneously light boron diffusion pressure drag is injected with dense boron and forms dense boron ohmic contact regions, the top in described piezoresistive pressure sensor pressure drag region deposits silicon dioxide layer, silicon dioxide layer top deposits silicon nitride layer, described silicon dioxide layer together with silicon nitride layer as insulating passivation layer, described insulating passivation layer has fairlead, utilize plain conductor to be communicated with pressure drag region, and 4 light boron diffusion pressure drags in piezoresistive pressure sensor pressure drag region form Hui Sidun full-bridge by plain conductor and connect, the top of described insulating passivation layer deposits amorphous silicon, described amorphous silicon and first key combined glass glass anode linkage, described silica-based front is also formed with dense boron wire, the top of described dense boron wire is connected with metal pin, dense boron wire is communicated with working sensor district with metal pin, the described silica-based back side and the second bonding glass anode linkage, the second described bonding glass is with air hole, and described air hole is positioned at the below of piezoresistive pressure sensor diaphragm.
MEMS piezoresistive pressure sensor of the present invention, preferably described silica-based be N-shaped (100) silicon chip; The thickness of the amorphous silicon of the top deposition of preferred described insulating passivation layer is 2～4 μ m.
The principle of work of MEMS piezoresistive pressure sensor of the present invention is as follows: MEMS piezoresistive pressure sensor of the present invention is the pressure drag characteristic based on monocrystalline silicon after boron doping mainly, light boron diffusion pressure drag on piezoresistive pressure sensor semi-girder is subject to after the effect of power, resistivity changes, can obtain by Hui Sidun full-bridge the electric signal output that the power that is proportional to changes, just can know the size of surveyed physical quantity by measuring electric signal output.In the present invention, we realize P type pressure drag to N-shaped (100) crystal orientation silicon chip B Implanted, utilize PN junction to realize the isolated of pressure drag, due to the anisotropy of the piezoresistance coefficient of pressure drag, the stress of different directions has different impacts to pressure drag, in order to increase as far as possible sensitivity, the arrangement mode of the light boron diffusion pressure drag in MEMS piezoresistive pressure sensor pressure drag of the present invention region is: longitudinally along silica-based (1,1,0) crystal orientation direction, laterally along silica-based (1,-1,0) crystal orientation direction distributes, and longitudinally piezoresistance coefficient, horizontal piezoresistance coefficient are respectively 71.8 ,-66.3.
Piezoresistive pressure sensor of the present invention adopts rectangular film design, 4 light boron diffusion pressure drag parallel arrangements, make full use of horizontal piezoresistive effect, such piezoresistive pressure sensor has brachium pontis resistance and is evenly distributed, the good advantage of output linearity degree and consistance, certainly,, according to different sensitivity needs, described light boron diffusion pressure drag can adopt different distribution modes.4 light boron diffusion pressure drags of piezoresistive pressure sensor of the present invention connect and compose Hui Sidun full-bridge by plain conductor, and, a kind of connected mode of piezoresistive pressure sensor metal pin is: the first pin connects piezoresistive pressure sensor and just exporting, the second pin ground connection, it is negative that three-prong connects piezoresistive pressure sensor output, and the 4th pin connects positive source.
The present invention also provides a kind of manufacture method of the described piezoresistive pressure sensor based on anode linkage encapsulation, and described manufacture method is carried out as follows:
A) get silicon chip as silica-based, twin polishing, cleans first double-sided deposition layer of silicon dioxide, then double-sided deposition one deck silicon nitride;
B) positive dry etching silicon nitride, silicon dioxide are to silica-based end face;
C) the long layer of silicon dioxide protective seam of positive hot oxygen, front photoresist goes out the pressure drag region of piezoresistive pressure sensor as mask lithography, then inject light boron, forms light boron diffusion pressure drag, removes photoresist;
D) front photoresist goes out dense boron conductor area as mask lithography, and makes dense boron Ohmic contact region by lithography in light boron diffusion pressure drag region, then injects dense boron, form the dense boron wire of silica-based inside, and in the inner dense boron ohmic contact regions that forms of light boron diffusion pressure drag, remove photoresist, annealing;
E) first double-sided deposition layer of silicon dioxide, then double-sided deposition one deck silicon nitride, positive silicon dioxide layer together with silicon nitride layer as insulating passivation layer;
F) front photoresist goes out a point film trap region as mask lithography, and dry process reaction ion etching (RIE) silicon nitride, silicon dioxide is to silica-based end face, exposes point film trap region silica-based;
G) positive deposition one deck amorphous silicon, directly contacts with silica-based at a point film trap region amorphous silicon;
H) front photoresist goes out working sensor region and metal pin regional graphics as mask lithography, and RIE etching amorphous silicon, to silicon nitride layer, is removed photoresist;
I) front photoresist goes out fairlead as mask lithography, and dry method RIE etch silicon nitride, silicon dioxide layer, to silica-based end face, are removed photoresist, form fairlead;
J) front plated metal conductor layer, front photoresist goes out plain conductor and metal pin figure as mask lithography, and corrosion does not have the metal of photoresist overlay area, removes photoresist, and Alloying Treatment forms plain conductor and metal pin;
K) back side photoresist goes out to corrode silicon window as mask lithography, and RIE etch silicon nitride, silicon dioxide, to silica-based bottom surface, are removed photoresist;
L) silicon nitride, silicon dioxide layer are done the silica-based formation piezoresistive pressure sensor back of the body of mask wet etching chamber;
M) the remaining silicon nitride in the dry method RIE etching back side, silicon dioxide are to silica-based bottom surface, and silicon-glass anodic bonding is carried out at the back side;
N) amorphous silicon-glass anodic bonding is carried out in front;
O) scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry: scribing for the first time, remove metal pin top glass; Structure in point film trap is scratched in scribing for the second time, separates one single chip, completes encapsulation.
The present invention is based on the manufacture method of the piezoresistive pressure sensor of anode linkage encapsulation, step m) in, the technological parameter of recommending the back side to carry out silicon-glass anodic bonding is: voltage 300～500V, electric current 15～20mA, 300～400 DEG C of temperature, pressure 2000～3000N, time 5～10min.
The present invention is based on the manufacture method of the piezoresistive pressure sensor of anode linkage encapsulation, step n) in, recommend the positive technological parameter that carries out amorphous silicon-glass anodic bonding to be: voltage 450～1000V, electric current 15～25mA, 300～400 DEG C of temperature, pressure 2000～3000N, time 15～25min.
Anode linkage technology of the present invention is a kind of prior art, this technology is well-known to those skilled in the art, its principle of work is: DC power anode is connect to silicon chip, negative pole connects glass sheet, because the performance of glass under certain high temperature is similar to electrolyte, and silicon chip is in the time that temperature is elevated to 300 DEG C～400 DEG C, resistivity will be down to 0.1 Ω m because of intrinsic excitation, and now the conducting particles in glass is (as Na
+) under External Electrical Field, float to the glass surface of negative electrode, and leave negative charge at the glass surface of next-door neighbour's silicon chip, due to Na
+drift make in circuit generation current flow, the glass surface of next-door neighbour's silicon chip can form the space charge region (or claiming depletion layer) that one deck width is as thin as a wafer about several microns.Because depletion layer is electronegative, silicon chip is positively charged, so exist larger electrostatic attraction between silicon chip and glass, make both close contacts, and at bonding face generation physical-chemical reaction, form the Si-O covalent bond of strong bonded, silicon and glass interface are linked together securely.
According to described principle, anode linkage technology is not adapted at using in the N-shaped silicon of B Implanted and the bonding of glass, reason is: the N-shaped silicon of B Implanted is in fact a PN junction, in anodic bonding process, strong voltage is by can be by its reverse breakdown in silica-based, cause its electric leakage, destroy the electric property of device.While existing PN junction or other to the more sensitive circuit structure of high pressure ratio near silicon on glass bonding face, in bonding process, the high pressure of 500～1500V easily punctures in MEMS device near circuit bonding region especially, affects the performance of device.
For the problem existing in above-mentioned existing anode linkage technology, the present invention for the second time bonding technology utilizes amorphous silicon as the conductting layer between silica-based, glass, bonding electric current is passed through along silicon-amorphous si-glass direction as much as possible, make described PN junction avoid highfield, finally realize the anode linkage of upper strata amorphous silicon and glass, experiment showed, that this amorphous silicon-glass anodic bonding still can ensure to approach bond strength and the impermeability of si-glass.
The encapsulation of the described piezoresistive pressure sensor based on anode linkage encapsulation need to be through twice anode linkage, bonding is back side silicon-glass anodic bonding for the first time, relatively easily realize, bonding is the anode linkage of front amorphous silicon and glass for the second time, relatively difficulty, can suitably add strong bonding voltage, increase bonding time.In the present invention, utilize amorphous silicon and glass bonding to also have a very large advantage, described bonding method has avoided glass to contact with the direct of silicon, has stopped the Na that original glass and silicon bonding surface may produce
+isoionic pollution.
In piezoresistive pressure sensor structure of the present invention, in the amorphous si-glass bonding process of front, utilize amorphous silicon to form piezoresistive pressure sensor vacuum cavity as step, this design makes first key combined glass glass not need slot to process directly just can carry out bonding, has saved bonding cost.In piezoresistive pressure sensor structure of the present invention, the thickness of vacuum cavity directly depends on the thickness of amorphous silicon deposition, because amorphous silicon deposition obtains blocked up its density, adhesiveness all can be affected, and can strengthen the difficulty of lower step photoetching, so for fear of glass in bonding process and silicon nitride Direct Bonding, ensure the performance that amorphous silicon is good, the amorphous silicon thickness in sensor of the present invention can be got 2～4 μ m simultaneously.
The present invention is the MEMS piezoresistive pressure sensor that utilizes anode linkage encapsulation, this sensor has first key combined glass glass-silica-based the-second bonding glass sandwich structure, recommend to do silica-based with N-shaped (100) silicon chip, adopt surperficial micro-processing technology and body micro-processing technology to manufacture the pressure diaphragm that spreads pressure drag with light boron as pressure sensor structure, and utilize secondary anode bonding techniques to carry out wafer level packaging, anode linkage adopts silicon-glass anodic bonding for the first time, anode linkage utilizes amorphous silicon layer to make bonding electric current not pass through PN junction as middle layer for the second time, protection sensor PN junction, realize amorphous silicon-glass anodic bonding.Utilize the encapsulation of amorphous silicon-glass anodic bonding technology to solve and in traditional si-glass anodic bonding process, easily puncture silicon face PN junction and produce the shortcomings such as ionic soil.Sensor construction novelty of the present invention, lightweight, volume is little, good stability, contamination resistance strong, good reliability.Sensor of the present invention has certain application prospect in fields such as Aero-Space, military affairs, automobile, environmental monitorings.
(4) brief description of the drawings
Fig. 1 is the cross-sectional view of piezoresistive pressure sensor of the present invention;
Fig. 2 is the vertical view of piezoresistive pressure sensor of the present invention;
Fig. 3～Figure 17 is the manufacturing process flow diagrammatic cross-section of piezoresistive pressure sensor of the present invention:
Fig. 3 is the schematic diagram of double-sided deposition silicon dioxide, silicon nitride layer;
Fig. 4 is the extremely schematic diagram of silica-based end face of positive dry etching silicon nitride, silicon dioxide;
Fig. 5 is the schematic diagram that forms light boron diffusion pressure drag;
Fig. 6 is the schematic diagram that forms dense boron wire and dense boron ohmic contact regions;
Fig. 7 is the schematic diagram that is formed as insulating passivation layer;
Fig. 8 is that front etches point schematic diagram in film trap region;
Fig. 9 is the schematic diagram of front deposition of amorphous silicon;
Figure 10 is the schematic diagram that forms working sensor region and metal pin regional graphics;
Figure 11 forms the schematic diagram of fairlead;
Figure 12 is the schematic diagram that forms plain conductor and metal pin;
Figure 13 is the schematic diagram that the back side forms corrosion silicon window;
Figure 14 is the schematic diagram that forms piezoresistive pressure sensor back of the body chamber;
Figure 15 is the schematic diagram that silicon-glass anodic bonding is carried out at the back side;
Figure 16 is the schematic diagram that amorphous silicon-glass anodic bonding is carried out in front;
Figure 17 is the schematic diagram that scribing completes encapsulation.
In Fig. 1～Figure 17: the dense boron ohmic contact regions of the light boron diffusion of 1-pressure drag inside, the light boron diffusion of 2-pressure drag, silicon dioxide layer in the insulating passivation layer of 3-front, 3 '-back side the second silicon dioxide layer, silicon nitride layer in the insulating passivation layer of 4-front, 4 '-back side the second silicon nitride layer, 5-plain conductor, 6-first key combined glass glass, 7-amorphous silicon, the dense boron wire of 8-, 9-metal pin, 10-is silica-based, 11-the second bonding glass, 12-air hole, 13-piezoresistive pressure sensor diaphragm, positive the first silicon dioxide layer of 14-, 14 '-back side the first silicon dioxide layer, positive the first silicon nitride layer of 15-, 15 '-back side the first silicon nitride layer, 16-divides film trap, and, in Fig. 2,9a～9d represents the first～four pin successively,
Figure 18 is the pin definitions of piezoresistive pressure sensor of the present invention;
Pin definitions in Figure 18: 1.-the first pin connect piezoresistive pressure sensor output just, 2.-the second pin ground connection, 3.-three-prong connects that piezoresistive pressure sensor output is negative, the 4.-tetra-pin connects positive source; In figure, 17-pressure drag.
(5) embodiment
Below in conjunction with accompanying drawing, the invention will be further described, but protection scope of the present invention is not limited in this.
As shown in Figure 1, piezoresistive pressure sensor of the present invention, adopted first key combined glass glass-silica-based the-second bonding glass sandwich structure, described sensor mainly comprises: silica-based (10), piezoresistive pressure sensor diaphragm (13) for gaging pressure (hydrodynamic pressure), dense boron wire (8), metal pin (9), carry out the second bonding glass (11) of anode linkage and carry out the first key combined glass glass (6) of anode linkage with amorphous silicon (7) with silica-based (10).
Wherein, the upper surface that is used for the piezoresistive pressure sensor diaphragm (13) of gaging pressure (hydrodynamic pressure) has injected the light boron diffusion pressure drag (2) of light boron as piezoresistive pressure sensor, and form dense boron ohmic contact regions (1) at the dense boron of the inner injection of light boron diffusion pressure drag, above the pressure drag region of piezoresistive pressure sensor, deposit silicon dioxide layer (3) and silicon nitride layer (4) as insulating passivation layer, on insulating passivation layer, have fairlead and utilize plain conductor (5) to be communicated with pressure drag region.4 light boron diffusion pressure drags of pressure drag district inclusion of piezoresistive pressure sensor, 4 light boron diffusion pressure drag parallel arrangements also form the connection of Hui Sidun full-bridge by plain conductor (5), when existing after the pressure perpendicular to device surface, the distortion of piezoresistive pressure sensor diaphragm, the pressure drag that is positioned at piezoresistive pressure sensor diaphragm upper surface is subject to the effect of power, resistivity changes, two pressure drags and two, outside pressure drag lay respectively at two of Hui Sidun full-bridge to bridge in the middle of piezoresistive pressure sensor diaphragm upper surface as shown in Figure 2, can obtain by Hui Sidun full-bridge the electric signal output that the power that is proportional to changes, just can know the size of institute's measuring pressure by measuring electric signal output.Utilize the design of Hui Sidun full-bridge to improve the sensitivity of piezoresistive pressure sensor part in the present invention and can ensure good linearity.
The encapsulation of chip adopts secondary anode bonding techniques.Anode linkage is the silicon-glass anodic bonding of chip back the second bonding glass (11) and silica-based (10) for the first time; Anode linkage adopts amorphous silicon layer to make bonding electric current not pass through PN junction as middle layer for the second time; protection sensor PN junction; realize the anode linkage of front amorphous silicon (7) and first key combined glass glass (6); anode linkage does not adopt the reason of silicon on glass bonding to be for the second time: on silicon-glass anodic bonding bonding face, exist PN junction; strong voltage when bonding easily punctures PN junction, destroys the electric property of circuit.
Out-of-flatness for fear of amorphous silicon (7) with first key combined glass glass (6) bonding face, ensure the impermeability of encapsulation, described piezoresistive pressure sensor does not adopt plain conductor to connect chip workspace and metal pin, but utilizes dense boron wire (8) as inner lead, working sensor district to be connected with metal pin.
As shown in Fig. 3～Figure 17, the manufacturing process of the piezoresistive pressure sensor based on anode linkage encapsulation of the present invention comprises the steps:
A) as shown in Figure 3: get silicon chip as silica-based (10), twin polishing, clean, first double-sided deposition thick silicon dioxide layer (14), (14 ') of one deck 0.8 μ m, thicker silicon nitride layer (15), (15 ') of double-sided deposition one deck 0.2 μ m; Described silicon chip is N-shaped (100) silicon chip;
B) as shown in Figure 4: positive dry etching silicon nitride (15), silicon dioxide (14) are to silica-based (10) end face;
C) as shown in Figure 5: the thick silicon dioxide of the long one deck 80nm of positive hot oxygen is as preflood protective seam, front photoresist goes out the pressure drag region of piezoresistive pressure sensor as mask lithography, then carry out boron Implantation (light boron), form light boron diffusion pressure drag (2), remove photoresist;
D) as shown in Figure 6: front photoresist goes out dense boron conductor area as mask lithography, and carve dense boron Ohmic contact region in light boron diffusion pressure drag (2) area light, then carry out boron Implantation (dense boron), form dense boron wire (8), and in the inner dense boron ohmic contact regions (1) that forms of light boron diffusion pressure drag (2), remove photoresist, annealing;
E) as shown in Figure 7: thick silicon dioxide layer (3), (3 ') of first double-sided deposition one deck 0.2 μ m, thick silicon nitride layer (4), (4 ') of double-sided deposition one deck 0.2 μ m again, positive silicon dioxide layer (3) and silicon nitride layer (4) are together as insulating passivation layer;
F) as shown in Figure 8: front photoresist goes out a point film trap region as mask lithography, dry method RIE etch silicon nitride (4), silicon dioxide (3) is to silica-based (10) end face, exposes point film trap region silica-based;
G) as shown in Figure 9: the thick amorphous silicon layer (7) of positive deposition one deck 3 μ m, directly contacts with silica-based (10) at a point film trap region amorphous silicon (7);
H) as shown in figure 10: front photoresist goes out working sensor region and metal pin (6) regional graphics as mask lithography, RIE etching amorphous silicon (7), to silicon nitride layer (4), is removed photoresist;
I) as shown in figure 11: front photoresist goes out fairlead as mask lithography, dry method RIE etch silicon nitride (4), silicon dioxide (3), to silica-based (10) end face, are removed photoresist, form fairlead;
J) as shown in figure 12: the thick aluminium of front magnetron sputtering one deck 1 μ m, front photoresist goes out metallic aluminium wire (5) and metal pin (9) figure as mask lithography, corrosion does not have the aluminium of photoresist overlay area, remove photoresist, Alloying Treatment, forms metallic aluminium wire (5) and metal pin (9);
K) as shown in figure 13: back side photoresist goes out to corrode silicon window as mask lithography, RIE etch silicon nitride (4 '), (15 '), silicon dioxide (3 '), (14 '), to silica-based (10) bottom surface, are removed photoresist;
L) as shown in figure 14: silicon nitride (4 '), (15 '), silicon dioxide layer (3 '), (14 ') are made mask, and 40wt%KOH aqueous solution wet etching silica-based (10) forms piezoresistive pressure sensor back side cavity;
M) as shown in figure 15: the remaining silicon nitride in the dry method RIE etching back side (4 '), (15 '), silicon dioxide (3 '), (14 '), silicon-glass anodic bonding was carried out at the back side to silica-based (10) bottom surface;
N) as shown in figure 16: amorphous silicon-glass anodic bonding is carried out in front;
O) as shown in figure 17: scribing, realize the encapsulation of one single chip, scribing makes two bites at a cherry: scribing for the first time, remove metal pin (9) top glass (6); Structure in point film trap is scratched in scribing for the second time, separates one single chip, completes encapsulation.
Further, in order to ensure the quality of twice anode linkage, by test of many times, the present invention has provided the optimum bonding parameter of described piezoresistive pressure sensor, as table 1, shown in 2.
Table 1 is anode linkage (si-glass) parameter for the first time
Table 2 is anode linkage (amorphous si-glass) parameter for the second time
It should be noted that, the present invention not parameter such as the cantilever beam structure size to Sensor section, pressure drag number, pressure drag size and arranged distribution limits, also the technological parameter of manufacturing process of the present invention is not limited, and this embodiment is only illustrative, the present invention is not done to any restriction.
Claims (9)
1. the MEMS piezoresistive pressure sensor based on anode linkage encapsulation, is characterized in that described sensor has first key combined glass glass-silica-based the-second bonding glass sandwich structure, described silica-based inside is formed with piezoresistive pressure sensor diaphragm, silica-based front is formed with the pressure drag region of piezoresistive pressure sensor, the pressure drag region of described piezoresistive pressure sensor is positioned at the upper surface of piezoresistive pressure sensor diaphragm, and be injected with light boron and form 4 light boron diffusion pressure drags, the inside of simultaneously light boron diffusion pressure drag is injected with dense boron and forms dense boron ohmic contact regions, the top in described piezoresistive pressure sensor pressure drag region deposits silicon dioxide layer, silicon dioxide layer top deposits silicon nitride layer, described silicon dioxide layer together with silicon nitride layer as insulating passivation layer, described insulating passivation layer has fairlead, utilize plain conductor to be communicated with pressure drag region, and 4 light boron diffusion pressure drags in piezoresistive pressure sensor pressure drag region form Hui Sidun full-bridge by plain conductor and connect, the top of described insulating passivation layer deposits amorphous silicon, described amorphous silicon and first key combined glass glass anode linkage, described silica-based front is also formed with dense boron wire, the top of described dense boron wire is connected with metal pin, dense boron wire is communicated with working sensor district with metal pin, the described silica-based back side and the second bonding glass anode linkage, the second described bonding glass is with air hole, and described air hole is positioned at the below of piezoresistive pressure sensor diaphragm.
2. the MEMS piezoresistive pressure sensor based on anode linkage encapsulation as claimed in claim 1, the arrangement mode that it is characterized in that the light boron diffusion pressure drag in described piezoresistive pressure sensor pressure drag region is: longitudinally along silica-based (1,1,0) crystal orientation direction, laterally along silica-based (1,-1,0) crystal orientation direction distributes, and longitudinally piezoresistance coefficient, horizontal piezoresistance coefficient are respectively 71.8 ,-66.3.
3. the MEMS piezoresistive pressure sensor based on anode linkage encapsulation as claimed in claim 1, is characterized in that described piezoresistive pressure sensor adopts rectangular film design, 4 light boron diffusion pressure drag parallel arrangements in piezoresistive pressure sensor pressure drag region.
4. the MEMS piezoresistive pressure sensor based on anode linkage encapsulation as claimed in claim 1, it is characterized in that described metal pin has 4, it is negative that the first pin connects piezoresistive pressure sensor output, the second pin ground connection, three-prong connects piezoresistive pressure sensor and is just exporting, and the 4th pin connects positive source.
5. the MEMS piezoresistive pressure sensor based on anode linkage encapsulation as described in claim 1～4, it is characterized in that described silica-based be N-shaped (100) silicon chip.
6. the MEMS piezoresistive pressure sensor based on anode linkage encapsulation as described in claim 1～4, is characterized in that the thickness of the amorphous silicon of described insulating passivation layer top deposition is 2～4 μ m.
7. the manufacture method of the MEMS piezoresistive pressure sensor based on anode linkage encapsulation as claimed in claim 1, the manufacture method described in it is characterized in that is carried out as follows:
A) get silicon chip as silica-based, twin polishing, cleans first double-sided deposition layer of silicon dioxide, then double-sided deposition one deck silicon nitride;
B) positive dry etching silicon nitride, silicon dioxide are to silica-based end face;
C) the long layer of silicon dioxide protective seam of positive hot oxygen, front photoresist goes out the pressure drag region of piezoresistive pressure sensor as mask lithography, then inject light boron, forms light boron diffusion pressure drag, removes photoresist;
D) front photoresist goes out dense boron conductor area as mask lithography, and makes dense boron Ohmic contact region by lithography in light boron diffusion pressure drag region, then injects dense boron, form the dense boron wire of silica-based inside, and in the inner dense boron ohmic contact regions that forms of light boron diffusion pressure drag, remove photoresist, annealing;
E) first double-sided deposition layer of silicon dioxide, then double-sided deposition one deck silicon nitride, positive silicon dioxide layer together with silicon nitride layer as insulating passivation layer;
F) front photoresist goes out a point film trap region as mask lithography, and dry method RIE etch silicon nitride, silicon dioxide is to silica-based end face, exposes point film trap region silica-based;
G) positive deposition one deck amorphous silicon, directly contacts with silica-based at a point film trap region amorphous silicon;
H) front photoresist goes out working sensor region and metal pin regional graphics as mask lithography, and RIE etching amorphous silicon, to silicon nitride layer, is removed photoresist;
I) front photoresist goes out fairlead as mask lithography, and dry method RIE etch silicon nitride, silicon dioxide layer, to silica-based end face, are removed photoresist, form fairlead;
J) front plated metal conductor layer, front photoresist goes out plain conductor and metal pin figure as mask lithography, and corrosion does not have the metal of photoresist overlay area, removes photoresist, and Alloying Treatment forms plain conductor and metal pin;
K) back side photoresist goes out to corrode silicon window as mask lithography, and RIE etch silicon nitride, silicon dioxide, to silica-based bottom surface, are removed photoresist;
L) silicon nitride, silicon dioxide layer are done the silica-based formation piezoresistive pressure sensor back of the body of mask wet etching chamber;
M) the remaining silicon nitride in the dry method RIE etching back side, silicon dioxide are to silica-based bottom surface, and silicon-glass anodic bonding is carried out at the back side;
N) amorphous silicon-glass anodic bonding is carried out in front;
O) scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry: scribing for the first time, remove metal pin top glass; Structure in point film trap is scratched in scribing for the second time, separates one single chip, completes encapsulation.
8. the manufacture method of the MEMS piezoresistive pressure sensor based on anode linkage encapsulation as claimed in claim 7, it is characterized in that the technological parameter that during step m), silicon-glass anodic bonding is carried out at the back side is: voltage 300～500V, electric current 15～20mA, 300～400 DEG C of temperature, pressure 2000～3000N, time 5～10min.
9. the manufacture method of the MEMS piezoresistive pressure sensor based on anode linkage encapsulation as claimed in claim 7, it is characterized in that the technological parameter that during step n), amorphous silicon-glass anodic bonding is carried out in front is: voltage 450～1000V, electric current 15～25mA, 300～400 DEG C of temperature, pressure 2000～3000N, time 15～25min.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104266781A (en) * | 2014-10-09 | 2015-01-07 | 苏州敏芯微电子技术有限公司 | Piezoresistive pressure sensor and manufacturing method thereof |
| CN104330196A (en) * | 2014-11-28 | 2015-02-04 | 杭州士兰集成电路有限公司 | Cavity film piezoresistive pressure sensor and manufacturing method thereof |
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| CN104776951A (en) * | 2015-03-30 | 2015-07-15 | 中国电子科技集团公司第三十八研究所 | Piezoresistive MEMS (micro-electromechanical system) pressure sensor and preparation method thereof |
| CN104907568A (en) * | 2015-06-25 | 2015-09-16 | 武汉大学 | Piezoresistive thick film pressure sensor manufacturing method based on femtosecond laser composite technology |
| CN105021328A (en) * | 2015-07-13 | 2015-11-04 | 厦门大学 | Piezoresistive pressure sensor compatible with CMOS process and preparation method of piezoresistive pressure sensor |
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| CN107827077A (en) * | 2017-09-21 | 2018-03-23 | 广东电网有限责任公司惠州供电局 | A kind of pressure resistance type MEMS temperature sensor and preparation method thereof |
| CN108801535A (en) * | 2018-05-29 | 2018-11-13 | 浙江大学 | A kind of sheet-like flexible piezoresistance sensor from packaging method |
| CN109037049A (en) * | 2018-07-30 | 2018-12-18 | 中国电子科技集团公司第四十九研究所 | The method for completely removing metal layer between wafer level SOI material and glass electrostatic bonding face |
| CN109342836A (en) * | 2018-10-24 | 2019-02-15 | 清华大学 | Production technology based on piezoelectricity pressure resistance type wideband high field intensity micro field sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104266781A (en) * | 2014-10-09 | 2015-01-07 | 苏州敏芯微电子技术有限公司 | Piezoresistive pressure sensor and manufacturing method thereof |
| CN104330196A (en) * | 2014-11-28 | 2015-02-04 | 杭州士兰集成电路有限公司 | Cavity film piezoresistive pressure sensor and manufacturing method thereof |
| CN104614117A (en) * | 2015-01-15 | 2015-05-13 | 北京大学 | Piezoresistive pressure meter chip structure and preparation method thereof |
| CN104776951B (en) * | 2015-03-30 | 2017-06-20 | 中国电子科技集团公司第三十八研究所 | A kind of MEMS Piezoresistive Pressure Sensor and preparation method thereof |
| CN104776951A (en) * | 2015-03-30 | 2015-07-15 | 中国电子科技集团公司第三十八研究所 | Piezoresistive MEMS (micro-electromechanical system) pressure sensor and preparation method thereof |
| CN104907568A (en) * | 2015-06-25 | 2015-09-16 | 武汉大学 | Piezoresistive thick film pressure sensor manufacturing method based on femtosecond laser composite technology |
| CN105021328B (en) * | 2015-07-13 | 2019-01-18 | 厦门大学 | The compatible piezoresistive pressure sensor and preparation method thereof of CMOS technology |
| CN105021328A (en) * | 2015-07-13 | 2015-11-04 | 厦门大学 | Piezoresistive pressure sensor compatible with CMOS process and preparation method of piezoresistive pressure sensor |
| CN105241369A (en) * | 2015-08-17 | 2016-01-13 | 王文 | MEMS strain gauge chip and manufacturing process thereof |
| CN105241369B (en) * | 2015-08-17 | 2018-02-09 | 王文 | A kind of MEMS strain gauges chip and its manufacturing process |
| CN107827077A (en) * | 2017-09-21 | 2018-03-23 | 广东电网有限责任公司惠州供电局 | A kind of pressure resistance type MEMS temperature sensor and preparation method thereof |
| CN108801535A (en) * | 2018-05-29 | 2018-11-13 | 浙江大学 | A kind of sheet-like flexible piezoresistance sensor from packaging method |
| CN109037049A (en) * | 2018-07-30 | 2018-12-18 | 中国电子科技集团公司第四十九研究所 | The method for completely removing metal layer between wafer level SOI material and glass electrostatic bonding face |
| CN109342836A (en) * | 2018-10-24 | 2019-02-15 | 清华大学 | Production technology based on piezoelectricity pressure resistance type wideband high field intensity micro field sensor |
| CN109342836B (en) * | 2018-10-24 | 2021-03-26 | 清华大学 | Production process based on piezoelectric piezoresistive broadband high-field-intensity miniature electric field sensor |
| CN111141429A (en) * | 2019-12-23 | 2020-05-12 | 陕西电器研究所 | Vacuum-packaged sputtering film pressure sensitive element |
| CN112284578A (en) * | 2020-12-30 | 2021-01-29 | 东南大学 | MEMS pressure sensor and preparation method thereof |
| CN115144122A (en) * | 2022-08-31 | 2022-10-04 | 南京元感微电子有限公司 | High-temperature-resistant pressure sensor with multilayer structure and processing method thereof |
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