CN104600165B - 一种氮化物发光二极体结构 - Google Patents

一种氮化物发光二极体结构 Download PDF

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CN104600165B
CN104600165B CN201510062588.8A CN201510062588A CN104600165B CN 104600165 B CN104600165 B CN 104600165B CN 201510062588 A CN201510062588 A CN 201510062588A CN 104600165 B CN104600165 B CN 104600165B
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electric field
nitride
emitting diode
diode structure
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CN104600165A (zh
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蓝永凌
张家宏
林兓兓
谢翔麟
谢祥彬
徐志波
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Anhui Sanan Optoelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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Abstract

本发明提供一种氮化物发光二极体结构，包括：衬底、缓冲层、N型层、应力释放层、量子阱发光层、P型层，其中，在所述N型层与应力释放层之间***一生长温度等于或低于量子阱发光层生长温度的电场分散层，所述电场分散层为n型掺杂的多层氮化镓结构；利用不同浓度掺杂的GaN层逐步降低电场聚集，使电流均匀分散，从而提高氮化物半导体组件的静电耐压特性，降低组件在使用过程中的失效率，增加使用的可靠性，延长使用寿命。

Description

一种氮化物发光二极体结构
技术领域
本发明涉及氮化物半导体光电器件，尤其涉及一种具有电场分散层结构的氮化物半导体光电器件。
背景技术
近年来发光二极管（Light Emitting Diode，LED）组件着重于亮度提升，期望能应用于照明领域，以发挥节能减碳的功效。传统的GaN基发光二极管主要利用蓝宝石（Al2O3）为衬底，在其上生长GaN外延结构，但因GaN与蓝宝石衬底之间晶格常数失配和热膨胀系数的差异，导致在GaN基发光二极管中存在大量的缺陷，并且贯穿量子阱发光层后延伸至整个外延层。这些缺陷对GaN基发光二极管的漏电、ESD等电性有很大影响。因此，当放电电流流经LED的PN结时，产生的热量易使PN结两极之间局部介质熔融，造成PN结短路或漏电。
随着氮化物半导体组件应用扩大，除了需具有高亮度外，降低组件操作电压，提高组件静电耐压的重要性也随之提高。
发明内容
针对现有技术，为了提高静电耐压，本发明的氮化物半导体组件目的在于， 提供一种电场分散层结构，以降低电场聚集，使电流均匀分散，进而提高静电耐压，以提高组件特性。
为了达到上述目的，本发明采用的技术方案为：提供一种氮化物发光二极体结构，包括：衬底、缓冲层、N型层、应力释放层、量子阱发光层、P型层，其中，在所述N型层与应力释放层之间***一生长温度等于或低于量子阱发光层生长温度的电场分散层，所述电场分散层为n型掺杂的多层氮化镓结构。
优选的，所述电场分散层的层数为n，n≥3。
优选的，所述电场分散层至少包括掺杂浓度为5×1018～1×1019/cm3的氮化镓层A。
优选的，所述电场分散层至少包括掺杂浓度为1×1018～5×1018/cm3的氮化镓层B。
优选的，所述电场分散层至少包括掺杂浓度为1×1017～1×1018/cm3的氮化镓层C。
优选的，所述电场分散层中至少有一层的杂质浓度高于应力释放层。
优选的，所述电场分散层厚度范围为50埃～800埃。
优选的，所述电场分散层成长温度为700℃～900℃。
本发明至少具有以下有益效果：本发明的氮化物半导体组件中包含的电场分散层结构利用不同浓度掺杂的GaN层逐步降低电场聚集，使电流均匀分散，从而提高氮化物半导体组件的静电耐压特性，降低组件在使用过程中的失效率，增加使用的可靠性，延长使用寿命。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例一起用于解释本发明，并不构成对本发明的限制。此外，附图数据是描述概要，不是按比例绘制。
图1为本发明之实施例1之一种氮化物发光二极体结构侧视图。
图2～7为本发明之一种氮化物发光二极体局部结构示意图。
图中标注：1：衬底；2：缓冲层；3：N型层；4：电场分散层；401：氮化镓层A；402：氮化镓层B；403：氮化镓层C；5：应力释放层；6：量子阱发光层；7：P型层。
具体实施方式
下面结合附图和实施例对本发明的具体实施方式进行详细说明。
实施例1
请参看附图1和附图2，本发明提出一种氮化物发光二极体结构，包括：衬底1、依次生长在衬底1上的缓冲层2、N型层3、电场分散层4，应力释放层5、量子阱发光层6、P型层7。其中，衬底1材质为Al2O3单晶(Sapphire)、SiC(6H-SiC或4H-SiC)、Si、GaAs、GaN以及晶格常数（Lattice Constan）接近于氮化物半导体的单晶氧化物中的任意之一；缓冲层2的组成成分为氮化铝镓铟（Al1-x-yInyGaxN），其中0≦X＜1，0≦Y＜1；N型层3的组成成分为Si掺杂GaN，其生长温度为900℃～1100℃，Si掺杂浓度高于电场分散层4的掺杂浓度；电场分散层4至少为3层（层数为n）n型掺杂氮化镓结构，并且至少有一层的杂质浓度高于应力释放层5，本实施例优选Si掺杂，其厚度为50埃～800埃，生长温度等于或低于量子阱发光层6的生长温度，为700℃～900℃；应力释放层5为InGaN或InGaN/GaN超晶格结构（Supper lattice），掺杂浓度为5×1017～1×1018/cm3，其生长温度为800℃～900℃；量子阱发光层6由生长温度为800℃~880℃、周期为1~50的Si掺杂的量子垒（n-GaN）层和In掺杂的量子阱（InGaN）层交替生长而成；P型层7的组成成分为Mg掺杂的GaN，其厚度介于100埃至4000埃之间，其成长温度介于800℃到1000℃。
本实施例中，电场分散层4中至少包含掺杂浓度为5×1018～1×1019/cm3的氮化镓层A 401、掺杂浓度为1×1018～5×1018/cm3的氮化镓层B 402和掺杂浓度为1×1017～1×1018/cm3的氮化镓层C 403，且三种掺杂浓度的氮化镓层401、402、403按照浓度由高到低的顺序依次位于N型层3之上；由于所述电场分散层4包含掺杂浓度多样的氮化镓层，故当含有此结构的发光二极体被施加电场时，所述多样掺杂的氮化镓层可有效地分散缓冲外加电场，进而提高静电耐压性能。
此外，作为本实施例的变形实施方式，参看附图3～7，所述三种掺杂浓度的氮化镓层401、402、403于N型层3上层叠的顺序可依据生产的需要灵活调整，进而达到分散电场，提升发光二极体组件特性的作用。
应当理解的是，上述具体实施方案为本发明的优选实施例，本发明的范围不限于该实施例，凡依本发明所做的任何变更，皆属本发明的保护范围之内。

Claims (7)

1.一种氮化物发光二极体结构，包括：衬底、缓冲层、N型层、应力释放层、量子阱发光层、P型层，其特征在于：在所述N型层与应力释放层之间***一生长温度等于或低于量子阱发光层生长温度的电场分散层，所述电场分散层为多层氮化镓结构；所述电场分散层由掺杂浓度为5×1018～1×1019/cm3的氮化镓层A、掺杂浓度为1×1018 ～5×1018/cm3的氮化镓层B和掺杂浓度为1×1017～1×1018/cm3的氮化镓层C组成。
2.根据权利要求1所述的一种氮化物发光二极体结构，其特征在于：所述电场分散层的层数为n，n≥3。
3.根据权利要求1所述的一种氮化物发光二极体结构，其特征在于：所述电场分散层为n型掺杂层。
4.根据权利要求1所述的一种氮化物发光二极体结构，其特征在于：所述电场分散层中至少有一层的杂质浓度高于应力释放层。
5.根据权利要求1所述的一种氮化物发光二极体结构，其特征在于：所述电场分散层厚度范围为50埃～800埃。
6.根据权利要求1所述的一种氮化物发光二极体结构，其特征在于：所述电场分散层成长温度为700℃～900℃。
7.根据权利要求1所述的一种氮化物发光二极体结构，其特征在于：所述应力释放层为InGaN或InGaN/GaN 超晶格结构。
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