CN104600137B - The crystal silicon solar energy battery and its body passivating method of body passivation - Google Patents
The crystal silicon solar energy battery and its body passivating method of body passivation Download PDFInfo
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- CN104600137B CN104600137B CN201510026844.8A CN201510026844A CN104600137B CN 104600137 B CN104600137 B CN 104600137B CN 201510026844 A CN201510026844 A CN 201510026844A CN 104600137 B CN104600137 B CN 104600137B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 53
- 239000010703 silicon Substances 0.000 title claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 239000013078 crystal Substances 0.000 title claims abstract description 47
- 238000002161 passivation Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000001257 hydrogen Substances 0.000 claims abstract description 30
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 30
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052796 boron Inorganic materials 0.000 claims abstract description 29
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000002347 injection Methods 0.000 claims abstract description 18
- 239000007924 injection Substances 0.000 claims abstract description 18
- 238000002513 implantation Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 24
- 239000012535 impurity Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 10
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000002045 lasting effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000012190 activator Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 210000005056 cell body Anatomy 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007567 mass-production technique Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 241000720974 Protium Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 hydride ion Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a kind of method that crystal silicon solar energy battery is passivated for body, the crystal silicon solar energy battery includes semiconductor structure and is located at the passivation layer of the tow sides of the semiconductor structure respectively, the semiconductor structure includes boron doped region, and this method includes providing hydrogen for the boron doped region；Light injection is carried out to the crystal silicon solar energy battery at the first temperature up to the first scheduled time slot；And light injection is carried out to the crystal silicon solar energy battery at the second temperature up to the second scheduled time slot, the wherein second temperature is less than first temperature.
Description
Technical field
The present invention relates to crystal silicon solar energy battery and its body passivation side of area of solar cell, more particularly to body passivation
Method.
Background technology
At present, carry out melting ingot casting using silica crucible more than the silicon materials that crystal-silicon solar cell is used to form, for list
Crystalline silicon rod is typically lifted using vertical pulling method (Czochralski) using seed crystal.The inevitable sky that allows in preparation process
Oxygen in oxygen and crucible and impurity in gas enter the lattice of silicon in pyroprocess.The many shapes to occur in pairs of these impurity
Formula is present, and impurity complex centre is internally formed in semiconductor.The capture cross-section and density in these complex centres determine crystalline silicon
The useful life of recombination current density and excess carrier in cell body, constrains the conversion efficiency of crystal-silicon solar cell.
A variety of objectionable impurities majority, such as Ni, Cu, Co relevant with metal for having verified at present, these metal ions with
The development of ingot casting technology and the improvement of technique is progressively controlled.Other important impurity, such as iron, chromium and oxygen are in silicon chip
Portion can form gap state [Fei]、[Cri] and [Oi], the boron that the ions of these gap states can be with displacement in the presence of carrier is former
Son [Bs] form compound pair.Particularly [Oi], it is difficult to be controlled by process routes to its content, this causes extensive at present
There is body life time limitation in the boron dopant material used.
Therefore, a kind of technology in the impurity complex centre that can be eliminated or reduce in boron dopant material is desired by this area
's.
The content of the invention
The brief overview of one or more aspects given below is to provide to the basic comprehension in terms of these.This general introduction is not
The extensive overview of all aspects contemplated, and it is also non-to be both not intended to identify the key or decisive key element of all aspects
Attempt to define the scope in terms of any or all.Its unique purpose is to provide the one of one or more aspects in simplified form
A little concepts think the sequence of more detailed description given later.
In order to overcome drawbacks described above, the present invention provides a kind of to crystal silicon cell progress body passivation, to reduce in bluk recombination
Influence of the heart to efficiency of solar cell, so that the method for battery efficiency.
There is provided a kind of method that crystal silicon solar energy battery is passivated for body, the crystal according to an aspect of the present invention
Silicon solar cell includes semiconductor structure and is located at the passivation layer of the tow sides of the semiconductor structure, the semiconductor respectively
Structure includes boron doped region, and this method includes：
Hydrogen is provided for the boron doped region；
Light injection is carried out to the crystal silicon solar energy battery at the first temperature up to the first scheduled time slot；And
Light injection is carried out to the crystal silicon solar energy battery at the second temperature up to the second scheduled time slot, wherein second temperature
Degree is less than first temperature.
In one example, contain hydrogen in the passivation layer, the passivation layer is derived from for the hydrogen that the boron doped region is provided.
In one example, providing hydrogen for the boron doped region includes being placed in the crystal silicon solar energy battery into hydrogeneous atmosphere
In.
In one example, the hydrogeneous atmosphere is at least one of：Hydrogen, air and hydrogeneous nitrogen.
In one example, first temperature is higher than 230 DEG C, and the second temperature is less than 200 DEG C.
In one example, cut with the rate temperature change higher than 20 DEG C/s between first temperature and the second temperature
Change.
In one example, first period is in the range of 5s~60s, and second period is in 1s~30s scope
It is interior.
In one example, light note is carried out to the crystal silicon solar energy battery in the case where applying first temperature and the second temperature
Enter to make implantation concentration more than 1 × 1015cm-3。
In one example, implantation concentration is made applying this and carry out light injection at a temperature of first to the crystal silicon solar energy battery
More than 2 × 1015cm-3。
In one example, repeat to carry out light at a temperature of first and to the crystal silicon solar energy battery under the second temperature at this
The step of injection, is at least one times.
According to another aspect of the present invention there is provided a kind of crystal silicon solar energy battery, the crystal silicon solar energy battery bag
Include semiconductor structure and be located at the passivation layer of the tow sides of the semiconductor structure respectively, the semiconductor structure includes boron and adulterated
Region, the wherein crystal silicon solar energy battery have carried out body Passivation Treatment according to the above method.
In the present invention, foreign atom is passivated by the way of carrier, temperature field are combined using hydrogen, effectively
Reduce can activator impurity atom concentration, reduce the complex centre density of solar cell boron doped region.On the other hand, it is sharp
With the mobility for the temperature field control hydrogen being alternately present, the temperature field switched repeatedly ensure that enough with lasting light injection
Passivation-solidification process.Moreover, the scheme that the present invention is provided is applied to mass production techniques, it is possible to increase solar cell, especially
It is the open-circuit voltage and conversion efficiency of efficient solar battery.
Brief description of the drawings
After the detailed description of embodiment of the disclosure is read in conjunction with the following drawings, it better understood when the present invention's
Features described above and advantage.In the accompanying drawings, each component is not necessarily drawn to scale, and with similar correlation properties or feature
Component may have same or like reference.
Fig. 1 is the structural representation for showing conventional crystalline silicon solar cell；
Fig. 2 is to show the flow that body is passivated the method for crystal silicon solar energy battery that is used for according to an aspect of the present invention
Figure；
Fig. 3 is the schematic diagram for showing the crystal silicon solar energy battery generation photo-generated carrier under illumination condition；
Fig. 4 is to show the schematic diagram that principle is passivated according to the body of the present invention；And
Fig. 5 is to show the temperature field applied according to the present invention and implantation concentration time history plot.
For clarity, the brief description of reference given below：
100：Crystal silicon solar energy battery 110：Front passivation layer 111：Front electrode
130：Backside passivation layer 131：Backplate 120：Semiconductor structure
121：P-type semiconductor layer, boron doped region 122：N-type semiconductor layer, phosphorus doping region
140：Displacement boron atom 150：Interstitial impurity
160a：The hydrogen ion 160b of positively charged：The hydrogen atom 160c of electroneutral：Electronegative hydrogen ion
171：Hole 172：Electronics 180a and 180b：Hydrogen is passivated to be formed covalent right
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.Note, it is below in conjunction with accompanying drawing and specifically real
It is only exemplary to apply the aspects of example description, and is understood not to carry out any limitation to protection scope of the present invention.
Fig. 1 is the structural representation of conventional crystalline silicon solar cell 100.As shown in figure 1, solar cell 100 can be wrapped
Include semiconductor structure 120 and positioned at its positive passivation layer 110 and the passivation layer 130 positioned at its back side.Semiconductor structure 120 has
Body may include p-type semiconductor layer 122 and n-type semiconductor layer 121, and the p-semiconductor layer 122 is the boron doped region for being doped with boron,
The n-type semiconductor layer 121 is the phosphorus doping region of phosphorus doping formation.Semiconductor structure 120 is the core of solar cell 100
Part, it can produce photo-generated carrier under the irradiation of sunshine, so as to produce electric current.Shown in Fig. 1 is p-type back of the body passivation electricity
Pond, for example, being the solar cell for using the boron doped areas of Cz to be prepared for 156mm × 156mm p-type silicon chip, i.e. p-type semiconductor
Layer 122 is used as silicon substrate.But can also be other kinds of solar cell, such as n-type back of the body passivation cell.
Front passivation layer 110 can be SiN prepared by PECVDxStack membrane, backside passivation layer 130 can be SiO2/SiNx
Stack membrane.The main function of passivation layer 110,130 is to reduce the recombination rate of photo-generated carrier, to improve photoelectric transformation efficiency.It is blunt
Change and be respectively equipped with front electrode 111 and backplate 131 on layer 110 and 130.Usually, using silk-screen printing respectively in battery
Front and back type metal slurry, in high-temperature sintering process, slurry chemically reacts with passivation layer, Etch Passivation
And good Ohmic contact is formed with silicon, form front electrode and backplate.
As shown in figure 1, in boron doped region 122, displacement boron atom 140 and the formation of interstitial impurity 150 complex centre, this
The capture cross-section and density in a little complex centres determine recombination current density and remaining load in the body of crystal silicon solar energy battery 100
The useful life of son is flowed, the conversion efficiency of crystal silicon solar energy battery 100 is constrained.Further, since the processing technology of passivation layer,
Hydrogen can be contained in passivation layer 110,130, as shown in Figure 1.
Fig. 2 is to show the method 200 that body is passivated crystal silicon solar energy battery that is used for according to an aspect of the present invention
Flow chart.As shown in Fig. 2 method 200 may include：
Step 202：Hydrogen is provided for boron doped region.
As noted previously, as the reason for processing technology, containing protium in the passivation layer of current solar cell.Typical case
Ground, the main material of hydrogeneous passivation layer is in hydrogeneous silicon nitride, aluminum oxide, non-crystalline silicon, silica, carborundum, titanium oxide
It is one or more.Correspondingly, the source of hydrogen can be the hydrogen in passivation layer 110,130 in the step.As shown in figure 1, in passivation
The intersection of layer 110,130 and semiconductor structure 120 contains the hydrogen ion 160a of many positively chargeds.
More preferably, in order to there is more fully hydrogen, solar cell 100 can also be placed in hydrogeneous atmosphere.This is hydrogeneous
Atmosphere can be pure hydrogen, or air.In another example, the hydrogeneous atmosphere can be the mixing of hydrogen and nitrogen
The flow-rate ratio of gas, such as hydrogen and nitrogen is 1:4 atmosphere.
Step 204：Light injection is carried out to crystal silicon solar energy battery at the first temperature up to the first scheduled time slot.
In this step, temperature field is applied to solar cell 100, so that the temperature of solar cell 100 reaches first
Temperature, such as higher than 230 DEG C, more preferably, higher than 270 DEG C.At the same time, solar cell 100 is made to expose under light illumination to it
Light injection is carried out, for example, can make implantation concentration more than 2 × 1015cm-3, more preferably more than 3 × 1015cm-3, implantation concentration here
Refer to due to the concentration for the photo-generated carrier that light injects and produces.
Fig. 3 is the schematic diagram for showing the crystal silicon solar energy battery generation photo-generated carrier under illumination condition.It is exposed to
Under illumination condition, light injection process causes the generation of photo-generated carrier, including hole 171 and electronics 172.Under electric field action,
The direction of backplate 131 from hole 171 to p-type semiconductor side move, front electrode from electronics 172 to n-type semiconductor side
Move in 111 directions.
In this case, in motion process with hydrogen ion 160a charge-exchange occurs for electronics 172, so as to obtain electroneutral
Hydrogen atom 160b or negatively charged hydrogen ion 160c, as shown in Figure 4.As it was previously stated, hydrogen ion 160a source can be
From passivation layer 111,130, such as the hydrogen of the positively charged at the interface of passivation layer 111,130 and semiconductor structure 120 from
With electronics 172 electron exchange can occur for sub- 160a., can also be by solar energy in order to ensure there is enough hydrogen in preferred embodiment
Battery 100 is placed in hydrogeneous atmosphere, therefore, the hydrogen at semiconductor structure 120 with extraneous interface also by with electronics
172 charge-exchange turns into electroneutral hydrogen atom 160b or electronegative hydrogen ion 160c.
Neutral hydrogen atom 160b and negatively charged hydrogen ion 160c can obtain enough energy in temperature field, be formed
Free hydrogen atom 160b and free ion 160c.Hydrogen atom 160b and hydride ion 160c have one in motion process
Determine probability and electronics or charge-exchange occur again for hole, change band point property, and with displacement boron 140 and interstitial impurity
It is compound to colliding that atom 150 is formed.By collision, hydrogen ion 160c will replace interstitial impurity atom 150, with displacement boron
140 form new covalent bond 180a, or form new covalent bond 180b with interstitial impurity atom 150.
The process can last about 5s~60s time, to cause free hydrogen atom 160b and free ion 160c
Fully more covalent bond 180a and 180b can be formed with displacement boron 140 and interstitial impurity atom 150.
Step 206：Light is carried out to crystal silicon solar energy battery at the second temperature to inject up to the second scheduled time slot, wherein the
Two temperature are less than the first temperature.
After high-temperature field is applied, low temperature field is applied to solar cell 100, that is, applies second temperature, such as less than 200
DEG C, more preferably less than 180 DEG C.In the process, keep carrying out solar cell 100 light injection, such as light implantation concentration is 1
×1015cm-3.At the lower temperature, the covalent bond 180 newly formed is cured in cell body area, reaches the effect of body passivation,
As shown in Figure 4.This chilling process can last about 1s~30s time.
In one example, above-mentioned steps 204,206 are repeated.The temperature field and lasting light injection repeated make more next
More hydrogen moves to boron doped region 122 from front passivation layer 110 and backside passivation layer 130, carries out body passivation, temperature field
Changed with time as shown in Figure 5 with implantation concentration.Hydrogen in atmosphere is from semiconductor structure 120 with entering at extraneous interface
Row supplement, it is ensured that have enough hydrogen in body passivation.The rate temperature change switched between high temperature and low temperature can higher than 20 DEG C/
s。
After the body passivation technology of such as 30 minutes is carried out, solar batteries increase to 662mV from 660mV, electricity
Pond efficiency increases to 20.2% from 20%, and battery efficiency, which reaches, to be obviously improved.
Although for make explanation simplify the above method is illustrated and is described as a series of actions, it should be understood that and understand,
The order that these methods are not acted is limited, because according to one or more embodiments, some actions can occur in different order
And/or with from it is depicted and described herein or herein it is not shown and describe but it will be appreciated by those skilled in the art that other
Action concomitantly occurs.
In addition, present invention also offers a kind of crystal silicon solar electricity that body Passivation Treatment has been carried out by the above method
Pond.
In the present invention, foreign atom is passivated by the way of carrier, temperature field are combined using hydrogen, effectively
Reduce can activator impurity atom concentration, reduce the complex centre density of solar cell boron doped region.On the other hand, it is sharp
With the mobility for the temperature field control hydrogen being alternately present, the temperature field switched repeatedly ensure that enough with lasting light injection
Passivation-solidification process.Moreover, the scheme that the present invention is provided is applied to mass production techniques, it is possible to increase solar cell, especially
It is the open-circuit voltage and conversion efficiency of efficient solar battery.
It is for so that any person skilled in the art all can make or use this public affairs to provide of this disclosure be previously described
Open.Various modifications of this disclosure all will be apparent for a person skilled in the art, and as defined herein general
Suitable principle can be applied to spirit or scope of other variants without departing from the disclosure.Thus, the disclosure is not intended to be limited
Due to example described herein and design, but it should be awarded and principle disclosed herein and novel features phase one
The widest scope of cause.
Claims (9)
1. a kind of method that crystal silicon solar energy battery is passivated for body, the crystal silicon solar energy battery includes semiconductor structure
And it is located at the passivation layer of the tow sides of the semiconductor structure respectively, the semiconductor structure includes boron doped region, institute
The method of stating includes：
Hydrogen is provided for the boron doped region；
Light injection is carried out to the crystal silicon solar energy battery at the first temperature up to the first scheduled time slot；And
Light injection is carried out to the crystal silicon solar energy battery at the second temperature up to the second scheduled time slot, wherein second temperature
Degree is less than first temperature,
Wherein, repeat to carry out light injection at a temperature of described first and to the crystal silicon solar energy battery under the second temperature
The step of at least one times,
Wherein switched with the rate temperature change higher than 20 DEG C/s between first temperature and the second temperature.
2. the method for crystal silicon solar energy battery is passivated for body as claimed in claim 1, it is characterised in that the passivation layer
In contain hydrogen, the hydrogen provided for the boron doped region derives from the passivation layer.
3. the method for crystal silicon solar energy battery is passivated for body as claimed in claim 1, it is characterised in that mix for the boron
Miscellaneous region, which provides hydrogen, to be included being placed in the crystal silicon solar energy battery in hydrogeneous atmosphere.
4. the method for crystal silicon solar energy battery is passivated for body as claimed in claim 3, it is characterised in that described hydrogeneous
Atmosphere is at least one of：Hydrogen, air and hydrogeneous nitrogen.
5. the method for crystal silicon solar energy battery is passivated for body as claimed in claim 1, it is characterised in that first temperature
Degree is higher than 230 DEG C, and the second temperature is less than 200 DEG C.
6. the method for crystal silicon solar energy battery is passivated for body as claimed in claim 1, it is characterised in that when described first
Section is in the range of 5s~60s, and second period is in the range of 1s~30s.
7. the method for crystal silicon solar energy battery is passivated for body as claimed in claim 1, it is characterised in that described applying
The crystal silicon solar energy battery is carried out at first temperature and the second temperature light injection make implantation concentration more than 1 ×
1015cm-3。
8. the method for crystal silicon solar energy battery is passivated for body as claimed in claim 7, it is characterised in that described applying
Carrying out light injection at a temperature of first to the crystal silicon solar energy battery makes implantation concentration more than 2 × 1015cm-3。
9. a kind of crystal silicon solar energy battery, the crystal silicon solar energy battery includes semiconductor structure and is located at respectively described
The passivation layer of the tow sides of semiconductor structure, the semiconductor structure includes boron doped region, wherein the crystalline silicon sun
Energy battery method according to any one of claim 1 to 8 has carried out body Passivation Treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510026844.8A CN104600137B (en) | 2015-01-19 | 2015-01-19 | The crystal silicon solar energy battery and its body passivating method of body passivation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510026844.8A CN104600137B (en) | 2015-01-19 | 2015-01-19 | The crystal silicon solar energy battery and its body passivating method of body passivation |
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| Publication Number | Publication Date |
|---|---|
| CN104600137A CN104600137A (en) | 2015-05-06 |
| CN104600137B true CN104600137B (en) | 2017-08-04 |
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Address after: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee before: trina solar Ltd. Address after: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee after: trina solar Ltd. Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |