CN104576969B - A kind of preparation method of flexible photoelectric device - Google Patents
A kind of preparation method of flexible photoelectric device Download PDFInfo
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- CN104576969B CN104576969B CN201310472546.2A CN201310472546A CN104576969B CN 104576969 B CN104576969 B CN 104576969B CN 201310472546 A CN201310472546 A CN 201310472546A CN 104576969 B CN104576969 B CN 104576969B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- H—ELECTRICITY
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Abstract
The present invention provides a kind of preparation method of flexible photoelectric device, make to have in the one side of rough region in glass support plate and flexible polymer substrate is set, be placed in again within the chamber carry out high temperature, HIGH PRESSURE TREATMENT cause polymer molecule gradually with glass surface-OH formed hydrogen bond so that flexible polymer substrate fits in glass support plate surface.Low rough region strengthens adhesive force of the flexible polymer substrate in glass support plate；Adhesive force of the high rough region with flexible polymer substrate in glass support plate is little, can be stripped out the photoelectric device carried therewith by the flexible polymer substrate in the region easily after the cutting process of device from glass support plate.Adhesive is not used in the fixation procedure of flexible polymer substrate, sacrifice layer is also not provided with, processing step is simpler；And, substrate surface flatness is high, is conducive to the preparation process of follow-up photoelectric device.
Description
Technical field
The present invention relates to flexible electronic device field, and in particular to a kind of preparation method of flexible photoelectric device.
Background technology
(English full name is Organic Light-Emitting Diodes to organic electroluminescent LED, referred to as
OLED), organic solar batteries (English full name is Organic Photovoltaic, referred to as OPV), organic film field effect
Transistor (English full name is Organic Thin Film Transistor, referred to as OTFT), organic light pumped laser (English
Literary full name be Organic Semiconductor Lasers, referred to as OSL) etc. photoelectric device most glamour place be exactly can
To realize flexibility, will specifically have electrical part to be produced in flexible polymer substrate, such as polyethylene (PE), polypropylene (PP),
Polystyrene (PS), poly- alum ether (PES), polyethylene naphthalate (PEN), polyimides (PI), poly terephthalic acid
Glycol ester (PET) etc., these polymeric substrates can cause photoelectric device to bend, and can be rolled into arbitrary shape.
Because polymeric substrates have the features such as hardness is low, thermal coefficient of expansion is high, resistance to elevated temperatures is poor, it is being heated or stress
In the case of easily there is curling or peel off detached phenomenon, serious defect can be caused in the preparation process of device；Therefore, no
The preparation method of the conventional photoelectric device with rigid materials such as glass as substrate can be simply transplanted to into polymer flexible simply
On property substrate.Typically pass through first to fix on the rigid substrate polymeric substrates in prior art, such as glass substrate, to complete base
Flexible base board is peeled off from rigid substrates after finishing by the transmission and the preparation of each segment process of plate, device encapsulation again together with device,
Ultimately form flexible photoelectric device.
Chinese patent CN102651331A discloses a kind of preparation method of flexible electronic device, specially：Light is adopted first
Carving technology prepares substrate tray, i.e., multiple grooves are etched on rigid substrates (such as glass substrate), forms groove area, groove area
Periphery be plane marginal zone；Flexible base board is placed on into the top of substrate tray, by the substrate support of subsidiary flexible base board
Disk is put within the chamber and vacuumizes process, and is just deposited by chemical vapor deposition or physical vapour deposition (PVD) on flexible substrates solid
Given layer, fixed bed are conductive layer or insulating barrier, and beyond the external boundary for extending to flexible base board, thus the outward flange of fixed bed covers
Flexible base board is fixed on substrate tray；The processing technology of electronic device is carried out on flexible substrates；By on fixed bed
Coating photoresist, carry out precuring, exposure, development, developing regional is performed etching, the fixed bed on the region is etched away, will
Flexible base board is fallen with the photoresist lift off in other regions on substrate tray, and the vacuum between flexible base board and substrate tray is released
Put, flexible base board is separated with substrate tray.Sacrifice with commonly used in the prior art setting between rigid substrates and flexible base board
Sacrifice layer is removed to reach flexible base board compared with the technology that rigid substrates are peeled off after the completion of preparing by layer, device again, above-mentioned system
Preparation Method technique is simpler.But above-mentioned preparation method is employed many times photoetching technique, also there is a problem of that process costs are high, and
And during the stripping of device and rigid substrates, the problems such as easily there is colloid pollution；Arrange fluted on bearing substrate, true
The flatness on flexible base board surface will be destroyed under dummy status, the performance of subsequent device preparation process and device is had influence on.
The content of the invention
For this purpose, in the preparation technology of flexible photoelectric device, process costs are high in prior art to be solved by this invention, base
The low problem of plate surface flatness, there is provided the preparation method of the high flexible photoelectric device of process is simple, substrate surface flatness.
To solve above-mentioned technical problem, the technical solution used in the present invention is as follows：
A kind of preparation method of flexible photoelectric device of the present invention, comprises the steps：
S1, some high rough regions and some low rough regions around the high rough region are prepared in glass support plate
Domain, each high rough region and the low rough region around the high rough region form a device preparation unit region；
S2, flexible polymer substrate is directly set on the device preparation unit region, then is placed within the chamber and is carried out height
Temperature, HIGH PRESSURE TREATMENT；
S3, the flexible polymer substrate surface corresponding to the high rough region carry out the preparation of photoelectric device with
Encapsulation；
S4, the photoelectric device carried therewith by flexible polymer substrate described in the high rough region is cut out
Cut, and the photoelectric device carried therewith by the flexible polymer substrate is peeled off from the glass support plate.
Also comprise the steps after step S4：
Mask layer is prepared in S5, the flexible polymer substrate retained in the device preparation unit region, and is led to
Crossing mask layer carries out ashing process to the flexible polymer substrate, and through channel is formed in flexible polymer substrate；
S6, the glass support plate that the flexible polymer substrate is partly retained obtained in step S5 is placed in containing H2O
The within the chamber of gas is heated, then the remaining flexible polymer substrate is peeled off from the glass support plate.
The roughness of low rough region described in step S1 is Ra<0.1 μm, the roughness of the high rough region is 0.3 μ
m<Ra<0.5μm。
In high temperature described in step S2, step of high pressure, temperature is 200～250 DEG C, and pressure is 0.3～0.5MPa.
High temperature described in step S2, the process time of step of high pressure are 30～90 minutes.
Mask layer described in step S5 is the metal shielding layer for being provided with micropore.
The thickness of the metal shielding layer is 0.1～0.5mm, and the aperture of the micropore is 40～100 μm.
The heating-up temperature of heating stepses described in step S6 is 180～220 DEG C.
The process time of heating stepses described in step S6 is 20～60 minutes.
Flexible polymer substrate described in step S2 is directly placed or is steamed by rotary coating, chemical vapor deposition, vacuum
The method of plating is arranged in the glass support plate.
Preferably the flexible polymer substrate is directly placed in the glass support plate in step S2.
Also include vacuumizing process before high temperature described in step S2, step of high pressure, vacuum is 10-4～10-2Pa。
High rough region described in step S1 and the low rough region are prepared by acid system etching technics.
Before the preparation process of photoelectric device described in step S3, it is additionally included in the flexible polymer substrate and prepares bag
Include the water oxygen barrier layer that at least 2 layers blocker unit layer and at least 1 layer planarization elementary layer are arranged alternately, the blocker unit layer bag
The some blocker units in array distribution are included, the planarization elementary layer includes some planarization units in array distribution, institute
State during planarization unit is arranged on the gap of the adjacent blocker unit and extend in the blocker unit.
The material of the blocker unit is identical or different, selected from aluminum oxide, silica, silicon nitride, titanium oxide, oxidation
The combination of one or more in zirconium, aluminum oxynitride, silicon oxynitride, amorphous carbon.
The material of the planarization unit is selected from polyacrylate, Parylene, polyureas, polyethylene terephthalate
The combination of one or more in ester, PEN, polystyrene.
The above-mentioned technical proposal of the present invention has advantages below compared to existing technology：
1st, the present invention provides a kind of preparation method of flexible photoelectric device, wherein, the device preparation unit in glass support plate
Flexible polymer substrate is arranged on region, then is placed within the chamber carries out high temperature, HIGH PRESSURE TREATMENT；It is under high temperature, condition of high voltage, flexible poly-
In polymer substrates, polymer molecule energy is increased, and movement velocity is accelerated, and gradually shakes off the constraint of hydrogen bond between polymer molecule so that
Hydrogen bond disconnects；And the surface of glass support plate has substantial amounts of-Si-OH, according to Saudi Arabia's row principle is strangled, under high temperature, high pressure, it is polymerized
Thing molecule gradually with glass surface-OH formed hydrogen bond so that flexible polymer substrate fits in glass support plate surface.Institute
State and on device preparation unit region, prepare the high rough region and the low rough region for flexible base board adhesion prepared for device
Domain, the low rough region is around the high rough region；Low rough region surface-OH quantity is relatively more, flexible polymer
The tack of thing substrate and glass support plate is preferable.And the region for being used for device preparation is arranged to high rough region so that the region
The contact area of glass support plate and flexible polymer substrate reduce, so as to reduce the regional flexibility polymeric substrates and glass
The quantity of hydrogen bond between support plate, reduces the tack of flexible polymer substrate as far as possible in the case where not affecting photoelectric device to prepare,
The photoelectric device that the flexible polymer substrate in the region can be carried therewith easily after the cutting process of device is carried from glass
It is stripped out on plate, preparation process is simple.
2nd, the present invention provides a kind of preparation method of flexible photoelectric device, in the fixation procedure of flexible polymer substrate not
Using adhesive, also it is not provided with sacrifice layer, processing step is simpler；Photoetching process is provided without when substrate cuts, need not be carried out
The steps such as the removing of photoresist, the problems such as step is simply also not in colloid pollution, process costs are low；And, substrate surface
Flatness is high, roughness R of the high rough regionaOnly 0.3 μm～0.5 μm, be conducive to the preparation of follow-up photoelectric device
Journey.
3rd, the present invention provides a kind of preparation method of flexible photoelectric device, wherein, deposit in the device preparation unit region
Mask layer is prepared in the flexible polymer substrate stayed, and ashing process is carried out to the flexible polymer substrate by mask layer,
Through channel is formed in flexible polymer substrate；It is placed in containing H again2The within the chamber of O gases is heated, in this condition
Under, the polymer molecule at the through channel edge is easily and H2O molecules form hydrogen bond and gradually replace and glass support plate surface
- OH between hydrogen bond so that the remaining flexible polymer substrate can easily from the glass support plate peel off, glass support plate
Can reuse, and process is simple, it is easy to implement.
4th, the present invention provides a kind of preparation method of flexible photoelectric device, also set up in flexible polymer substrate including to
The water oxygen barrier layer that few 2 layers of blocker unit layer and at least 1 layer planarization elementary layer are arranged alternately, the blocker unit and described puts down
Smoothization unit is arranged in the cycle, described to planarize during unit is arranged on the gap of the adjacent blocker unit and extend to described
In blocker unit, the gap position that adjacent barrier elementary layer mutually can be covered between component units is so ensure that, effectively hindered
The lateral penetration of dash oxygen, the effective guarantee performance and used life of device.And the flexible polymer substrate can be big
In it is described planarization unit range scale in arbitrary dimension cut, simplify the processing step of flexible photoelectric device, reduce
Production cost.
Description of the drawings
In order that present disclosure is more likely to be clearly understood, the specific embodiment below according to the present invention is simultaneously combined
Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is glass support plate subregion schematic diagram in the present invention；
Fig. 2A is high rough region microcosmic schematic diagram described in glass support plate of the present invention；
Fig. 2 B are the sections after high rough region is fitted with the flexible polymer substrate described in glass support plate of the present invention
Figure；
Fig. 3 A are low rough region microcosmic schematic diagrames described in glass support plate of the present invention；
Fig. 3 B are the sections after low rough region is fitted with the flexible polymer substrate described in glass support plate of the present invention
Figure；
Fig. 4 is the sectional view of photoelectric device described in embodiment 1；
Fig. 5 A are that the photoelectric device carried therewith by heretofore described flexible polymer substrate is coarse from the height
The schematic diagram of the glass substrate after the stripping of region；
Fig. 5 B are the sectional views in Fig. 5 A along A-A ' lines；
Fig. 6 is to arrange mask layer in the present invention after photoelectric device is peeled off in the flexible polymer substrate of residual
Schematic cross-section；
Fig. 7 is that the schematic cross-section after cineration technics is carried out to the flexible polymer substrate in the present invention；
Fig. 8 is the mechanism figure that flexible polymer substrate described in heretofore described low rough region is peeled off.
In figure, reference is expressed as：The high rough region of 1- glass support plates, 11-, the low rough regions of 12-, 2- flexible polymers
Thing substrate, 3- cushions, 41- gate insulators, 42- semiconductor channel layers, 43- interlayer dielectric layers, 44- grids, 45- source electrodes,
46- drain electrodes, 5- planarization layers, 6- anodes, 7- organic function layers, 8- negative electrodes, 9- encapsulated layers, 10- mask layers, 13- through channels.
Specific embodiment
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with reality of the accompanying drawing to the present invention
The mode of applying is described in further detail.However, the present invention can realize in a number of different manners and be not limited to here and retouch
The embodiment stated.On the contrary, following provided embodiments, it will be apparent to those skilled in the art that so that the present invention is fully public
Open and the scope of the present invention is completely covered.In accompanying drawing, for the sake of clarity, the size and relative chi in each layer or region are exaggerated
It is very little.
Unless otherwise defined, all terms (including technology and scientific and technical terminology) for being adopted at this with belonging to this area
The equivalent that technical staff is generally understood.
Embodiment 1
The present embodiment provides a kind of preparation method of flexible photoelectric device, specifically includes following steps：
S1, as shown in figure 1, glass support plate 1 divide 4 device preparation unit regions, the device preparation unit region
Constitute by the high rough region 11 prepared for device and for the low rough region 12 of flexible base board adhesion, the low rough region
Domain 12 is around the high rough region.
The high rough region 11 and the low rough region 12 are prepared by acid system etching technics, the rough region
Roughness is Ra<0.1 μm, the present embodiment is preferably 0.05, and the thickness of the low rough region is 0.1 μm；The high rough region
The roughness in domain is 0.3 μm<Ra<0.5 μm, the present embodiment is preferably 0.4, and the thickness of the high rough region is 0.5 μm.As
The other embodiment of the present invention, other glass etch techniques such as can also etch to the high rough region 11 and institute by alkaline process
Stating low rough region 12 carries out coarse process, can realize the purpose of the present invention, belong to protection scope of the present invention.
S2, flexible polymer substrate 2 is directly set on the device preparation unit region, then is placed within the chamber and is carried out height
Temperature, HIGH PRESSURE TREATMENT；The flexible polymer substrate 2 can directly be placed or be steamed by rotary coating, chemical vapor deposition, vacuum
The polymer film forming methods such as plating are arranged in the glass support plate 1, and the present embodiment preferably flexible polymer substrate 2 can be straight
Connect and place in the glass support plate 1, the flexible polymer substrate 2 is selected from, but not limited to, polyethylene (PE), polypropylene (PP), gathers
Styrene (PS), poly- alum ether (PES), polyethylene naphthalate (PEN), polyimides (PI), poly terephthalic acid second
Diol ester (PET) etc., the preferred PI substrates of the present embodiment.First to being coated with the glass support plate 1 of the flexible polymer substrate 2
Being placed within the chamber carries out vacuumizing process, and vacuum is 0.001Pa so that the flexible polymer substrate 2 is carried with the glass
Plate 1 is brought into close contact, and then carries out high temperature, HIGH PRESSURE TREATMENT again, and within the chamber temperature is 220 DEG C, and pressure is 0.4MPa, and process time is
60 minutes.
Used as the other embodiment of the present invention, the within the chamber temperature is 200～250 DEG C, and pressure is 0.3～0.5MPa,
Process time can realize the purpose of the present invention for 30～90 minutes, belong to protection scope of the present invention.
Used as the other embodiment of the present invention, the glass support plate 1 to being coated with the flexible polymer substrate 2 is placed in
When within the chamber carries out vacuumizing process, vacuum is 10-4～10-2Pa, can realize the purpose of the present invention, belong to the present invention's
Protection domain.
On the device preparation unit region directly arrange flexible polymer substrate 2, then be placed within the chamber carry out high temperature,
HIGH PRESSURE TREATMENT；Under high temperature, condition of high voltage, in flexible polymer substrate 2, polymer molecule energy is increased, and movement velocity is accelerated, by
Gradually shake off the constraint of hydrogen bond between polymer molecule so that hydrogen bond disconnects；And the surface of the glass support plate 1 have it is substantial amounts of-
Si-OH, according to strangling Saudi Arabia row principle, under high temperature, condition of high voltage, polymer molecule gradually with glass surface-OH forms hydrogen
Key so that flexible polymer substrate 2 is brought into close contact and 1 surface of glass support plate.
As shown in Fig. 3 A and Fig. 3 B, made in the device preparation unit region by acid system etching technics described low thick
Rough region 12,12 surface of low rough region-OH quantity is relatively more, flexible polymer substrate 2 is in the glass support plate
1 adhesive force is larger.As shown in Fig. 2A and Fig. 2 B, due to the tip contact effect of the high rough region 11 so that the region
Between flexible polymer substrate 2 and glass support plate 1, contact area is reduced, so as to reduce the regional flexibility polymeric substrates 2 with
The quantity of hydrogen bond between glass support plate 1, reduces flexible polymer substrate 2 as far as possible in the case where not affecting photoelectric device to prepare and exists
Adhesive force in the glass support plate 1, after the cutting process of device, with the infiltration for cutting edge air, will can be somebody's turn to do easily
The photoelectric device carried therewith by the flexible polymer substrate 2 in region is stripped out from glass support plate 1.
Adhesive is not used in the fixation procedure of flexible polymer substrate 2, sacrifice layer is also not provided with, processing step is more
Simply, the problems such as being also not in colloid pollution, process costs are low；And, the roughness of the low rough region 12 is less than 0.1
μm, surface roughness is low, and plane is more smooth, the roughness (R of the high rough region 11a) for 0.4 μm, thickness is only 0.5 μm,
So that 2 surface smoothness of the flexible polymer substrate is high, be conducive to the preparation process of follow-up photoelectric device.
S3, the described high rough region 11 on 2 surface of the flexible polymer substrate carry out the preparation of photoelectric device and envelope
Dress；In the present embodiment, photoelectric device is active OLED, and used as the other embodiment of the present invention, the photoelectric device may be used also
Think that OPV, OTFT, OSL, LCD (liquid crystal display), LED (light emitting diode), PDP (plasma display system), LEC are (luminous
Electrochemical cell) etc., the purpose of the present invention can be realized, belongs to protection scope of the present invention.
The structural representation of active OLED described in the present embodiment is as shown in figure 4, structure and preparation technology co-occurrence
There is technology, including the cushion 3 being successively set on flexible base board 2, the semiconductor channel layer in TFT (thin film field-effect pipe)
42nd, gate insulator 41, grid 44, the interlayer dielectric layer 43 being arranged on grid 44, the source being arranged on interlayer dielectric layer 43
Pole 45 and drain electrode 46；Planarization layer 5 is set on TFT, for the planarization of device architecture, is easy to the system of Organic Light Emitting Diode
Standby, the Organic Light Emitting Diode has including anode 6, organic function layer 7, negative electrode 8；Wherein organic function layer 7 includes organic
One kind or many in photosphere, and the structure such as hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer
The combination planted.Flexible package layer 9 can be set above the active OLED after Organic Light Emitting Diode makes and finishes
It is packaged.
As the other embodiment of the present invention, before the preparation process of photoelectric device described in step S3, it is additionally included in described
The water oxygen being arranged alternately including at least 2 layers blocker unit layer and at least 1 layer planarization elementary layer is prepared in flexible polymer substrate 2
Barrier layer, the blocker unit layer include some blocker units in array distribution, and the planarization elementary layer is included in array
Some planarization units of distribution, during the planarization unit is arranged on the gap of the adjacent blocker unit and extend to described
In blocker unit.The gap position that adjacent barrier elementary layer mutually can be covered between component units is so ensure that, is effectively hindered
The lateral penetration of dash oxygen, the effective guarantee performance and used life of photoelectric device.And 2 energy of flexible polymer substrate
In more than the range scale for planarizing unit, arbitrary dimension cuts, and simplifies the processing step of flexible photoelectric device, drops
Low production cost.
Wherein, the material of the blocker unit is identical or different, selected from aluminum oxide, silica, silicon nitride, titanium oxide,
The combination of one or more in zirconium oxide, aluminum oxynitride, silicon oxynitride, amorphous carbon.
Wherein, the material of the planarization unit is selected from polyacrylate, Parylene, polyureas, poly terephthalic acid
The combination of one or more in glycol ester, PEN, polystyrene.
S4, the photoelectric device carried therewith by the flexible polymer substrate 1 in the high rough region 11
Cut, and the photoelectric device carried therewith by the flexible polymer substrate is peeled off from the glass support plate 1.
It is as described in the high rough region 11, between flexible polymer substrate 2 and the glass support plate 1, the quantity of hydrogen bond is few, described soft
Property adhesive force of the polymeric substrates 2 in the glass support plate 1 is little, after the cutting process of device, due to incision air
Penetrate into, the photoelectric device that can be carried the flexible polymer substrate 2 in the region therewith easily is peeled off from glass support plate 1
Out.
Also include after step S4：
After the photoelectric device carried therewith by S5, the flexible polymer substrate 2 is peeled off from glass support plate 1, the glass
The structural representation of glass support plate 1 is as shown in Figure 5 A and 5B；In the flexible polymer substrate 2 that the glass support plate 1 is retained
Mask layer 10 is prepared, the mask layer 10 is the metal mask layer with micropore, the thickness of metal mask layer made by Ni based alloys
Spend for 0.2mm, aperture is 50 μm, as shown in Figure 6；And carried out at ashing by 10 pairs of flexible polymer substrates of mask layer 2
Reason, forms through channel 13, as shown in Figure 7 in the flexible polymer substrate 2.
Used as the convertible embodiment invented, the mask layer 10 can be the metal mask layer with micropore, thickness
For 0.1～0.5mm, aperture is 40～100 μm, can realize the purpose of the present invention, belong to protection scope of the present invention.
S6, as shown in figure 8, the glass support plate 1 for the flexible polymer substrate 2 partly being retained obtained in step S5
It is placed in containing H2The within the chamber of O gases is heated, and temperature is 200 DEG C, and process time is 30 minutes, within the chamber H2O gases
Bulk density be 10～30g/L, preferably 20g/L.With this understanding, the polymer molecule at 13 edge of the through channel holds
Easily and H2O molecules formed hydrogen bond and gradually replace with the glass support plate surface-OH between hydrogen bond so that can easily will remain
The remaining flexible polymer substrate 2 is peeled off from the glass support plate 1, and the glass support plate 1 can be reused, and is effectively reduced
Process costs；And process is simple, it is easy to implement.
Used as the other embodiment of the present invention, the temperature of within the chamber described in step S6 is 180～220 DEG C, process time
For 20～60 minutes, the purpose of the present invention can be realized, belongs to protection scope of the present invention.
Embodiment 2
The present embodiment provides a kind of preparation method of flexible photoelectric device, and concrete steps are with embodiment 1, unique different
It is that in high temperature described in step S2, step of high pressure, temperature is 200 DEG C, and pressure is 0.3MPa, the high temperature, step of high pressure process
Time is 30 minutes；The temperature of heating stepses described in step S6 is 180 DEG C, and the heat time is 20 minutes.
Embodiment 3
The present embodiment provides a kind of preparation method of flexible photoelectric device, and concrete steps are with embodiment 1, unique different
It is that in high temperature described in step S2, step of high pressure, temperature is 250 DEG C, and pressure is 0.5MPa, the high temperature, step of high pressure process
Time is 90 minutes；The temperature of heating stepses described in step S6 is 220 DEG C, and the heat time is 60 minutes.
Using hundred lattice methods of testing, will paste in the obtained device preparation unit region in step 2 in above-described embodiment
The flexible polymer substrate 2 for getting togather carries out adhesive force test at different temperatures.Method of testing is：By flexible polymer substrate 2
Fitted by method of the present invention with glass support plate 1, hem width is produced for 3mm on flexible base board surface using cross-cut tester
Lattice, then adhered to using adhesive tape and flexible base board surface pressed, afterwards adhesive tape is opened, with reference to glass support plate surface
Judging the adhesiveness between flexible base board and glass support plate, adhesiveness index refers to ASTMD to flexible base board square dropping situations
3359 standards.Test result is as shown in the table：
A kind of preparation method of flexible photoelectric device of present invention offer is provided from upper table data, it is described low coarse
Region adhesion is larger, in the instance where such an adhesive is not utilized, flexible polymer substrate can be caused firmly to fit in glass
On support plate, curling will not be produced at different temperature or detached phenomenon is peeled off, is adapted to the carrying out of subsequent device preparation technology；
And the high rough region adhesion is less, after the completion of prepared by the flexible photoelectric device, through cutting step, can hold very much
Peel off easily from the glass support plate, it is process is simple, easy to operate.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description other multi-forms change or
Change.There is no need to be exhaustive to all of embodiment.And thus it is extended obvious change or
Among changing still in protection scope of the present invention.
Claims (15)
1. a kind of preparation method of flexible photoelectric device, it is characterised in that comprise the steps：
S1, prepare some high rough regions and some low rough regions around the high rough region in glass support plate, often
One high rough region and the low rough region around the high rough region form a device preparation unit region；
S2, flexible polymer substrate is directly set on the device preparation unit region, then is placed within the chamber and is carried out high temperature, height
Pressure process；
S3, the preparation of photoelectric device is carried out with envelope on the flexible polymer substrate surface corresponding to the high rough region
Dress；
S4, the photoelectric device carried therewith by flexible polymer substrate described in the high rough region is cut,
And the photoelectric device carried therewith by the flexible polymer substrate in the high rough region is carried from the glass
Peel off on plate；
The roughness of the low rough region is Ra<0.1 μm, the roughness of the high rough region is 0.3 μm<Ra<0.5μm。
2. the preparation method of a kind of flexible photoelectric device according to claim 1, it is characterised in that also wrap after step S4
Include following steps：
Mask layer is prepared in S5, the flexible polymer substrate retained in the device preparation unit region, and by covering
Film layer carries out ashing process to the flexible polymer substrate, and through channel is formed in flexible polymer substrate；
S6, the glass support plate that the flexible polymer substrate is partly retained obtained in step S5 is placed in containing H2O gases
Within the chamber is heated, then the remaining flexible polymer substrate is peeled off from the glass support plate.
3. a kind of preparation method of flexible photoelectric device according to claim 1 and 2, it is characterised in that institute in step S2
In stating high temperature, step of high pressure, temperature is 200～250 DEG C, and pressure is 0.3～0.5MPa.
4. the preparation method of a kind of flexible photoelectric device according to claim 3, it is characterised in that high described in step S2
Temperature, the process time of step of high pressure are 30～90 minutes.
5. the preparation method of a kind of flexible photoelectric device according to claim 2, it is characterised in that cover described in step S5
Film layer is the metal shielding layer for being provided with micropore.
6. a kind of preparation method of flexible photoelectric device according to claim 5, it is characterised in that the metal shielding layer
Thickness be 0.1～0.5mm, the aperture of the micropore is 40～100 μm.
7. the preparation method of a kind of flexible photoelectric device according to claim 2, it is characterised in that described in step S6 plus
The heating-up temperature of hot step is 180～220 DEG C.
8. the preparation method of a kind of flexible photoelectric device according to claim 2, it is characterised in that described in step S6 plus
The process time of hot step is 20～60 minutes.
9. a kind of preparation method of flexible photoelectric device according to claim 1 and 2, it is characterised in that institute in step S2
State flexible polymer substrate directly place or by rotary coating, chemical vapor deposition, vacuum evaporation method be arranged on it is described
In glass support plate.
10. a kind of preparation method of flexible photoelectric device according to claim 1 and 2, it is characterised in that institute in step S2
State flexible polymer substrate to be directly placed in the glass support plate.
A kind of 11. preparation methods of flexible photoelectric device according to claim 1 and 2, it is characterised in that institute in step S2
Also include vacuumizing process before stating high temperature, step of high pressure, vacuum is 10-4～10-2Pa。
A kind of 12. preparation methods of flexible photoelectric device according to claim 1 and 2, it is characterised in that institute in step S1
State high rough region and the low rough region is prepared by acid system etching technics.
A kind of 13. preparation methods of flexible photoelectric device according to claim 1 and 2, it is characterised in that institute in step S3
Before stating the preparation process of photoelectric device, it is additionally included in the flexible polymer substrate and prepares including at least 2 layers blocker unit
The water oxygen barrier layer that layer and at least 1 layer planarization elementary layer are arranged alternately, if the blocker unit layer is included in array distribution
Dry blocker unit, the planarization elementary layer include some planarization units in array distribution, and the planarization unit is arranged
In the gap of the adjacent blocker unit and extend in the blocker unit.
A kind of 14. preparation methods of flexible photoelectric device according to claim 13, it is characterised in that the blocker unit
Material it is identical or different, selected from aluminum oxide, silica, silicon nitride, titanium oxide, zirconium oxide, aluminum oxynitride, silicon oxynitride,
The combination of one or more in amorphous carbon.
A kind of 15. preparation methods of flexible photoelectric device according to claim 14, it is characterised in that the planarization list
The material of unit is selected from polyacrylate, Parylene, polyureas, polyethylene terephthalate, poly- naphthalenedicarboxylic acid ethylene glycol
The combination of one or more in ester, polystyrene.
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| CN106910429B (en) * | 2017-03-08 | 2019-05-14 | 京东方科技集团股份有限公司 | A kind of flexible die group and preparation method thereof |
| CN107195658B (en) * | 2017-05-25 | 2020-01-21 | 上海天马微电子有限公司 | Flexible substrate and manufacturing method thereof |
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| CN103140953A (en) * | 2010-07-13 | 2013-06-05 | Posco公司 | A flexible electronic device, method for manufacturing same, and a flexible substrate |
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