CN104576785B - 一种用于高In组分InGaAs探测器的突变弛豫缓冲层 - Google Patents

一种用于高In组分InGaAs探测器的突变弛豫缓冲层 Download PDF

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CN104576785B
CN104576785B CN201410728282.7A CN201410728282A CN104576785B CN 104576785 B CN104576785 B CN 104576785B CN 201410728282 A CN201410728282 A CN 201410728282A CN 104576785 B CN104576785 B CN 104576785B
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陈星佑
顾溢
张永刚
奚苏萍
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String sea (Shanghai) Quantum Technology Co., Ltd.
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Abstract

本发明涉及一种用于高In组分InGaAs探测器的突变弛豫缓冲层，在半导体衬底上外延InAs突变弛豫层，随后在InAs突变弛豫层上外延In组分反向递变的砷化物异变结构材料作为缓冲层。本发明的探测器结构可拓展半导体衬底上波长大于1.7μm的InGaAs红外探测器的研制方法，采用In组分反向递变的砷化物异变缓冲层结构，有望较好释放较大失配InGaAs材料中的应变，降低InGaAs吸收层中缺陷密度，提高器件性能；本发明在波长大于1.7μm的InGaAs红外探测器的结构设计等方法引入了更大的自由度，具有广泛的应用前景。

Description

一种用于高In组分InGaAs探测器的突变弛豫缓冲层
技术领域
本发明属于半导体光电子材料与器件领域，特别涉及一种用于高In组分InGaAs探测器的突变弛豫缓冲层。
背景技术
由于InGaAs材料为全组分直接带隙材料，通过调节In组分，可覆盖0.8～3.5μm波段。并且InGaAs探测器具有灵敏度高、响应速度快、抗辐照特性良好、室温工作等优点，因此InGaAs是制备短波红外波段探测器的理想材料。例如，室温截止波长为1.7μm的In0.53Ga0.47As探测器在光通讯领域获得了广泛应用，材料主要生长在与其匹配的InP衬底上，然而随着In组分继续提高，InGaAs材料与InP衬底间失配会越来越大。当In组分为83％时，In0.83Ga0.17As与InP衬底间的失配增至+2.1％。由于缺乏晶格匹配的衬底，扩展波长InGaAs探测器材料中的缺陷密度成为造成其器件暗电流较大，制约其应用的重要因素之一。鉴于InAs衬底带隙较窄、制备困难等方面的限制，应用其作为衬底生长高In组分InGaAs材料的可能性大大降低。与InP和InAs等衬底相比，GaAs衬底具有机械强度高、尺寸大且价格低廉等优异性能，是研制低暗电流密度、大面阵InGaAs红外焦平面器件的良好选择之一。但是，由于InAs与GaAs间的失配度较大(+6.7％)，相对于InP和InAs等衬底，高In组分InxGa1-xAs(0.53<x<1)与GaAs衬底间存在更大的失配度，这将不利于高质量材料外延生长。因此需要在衬底与外延层间生长一定结构的缓冲层，以释放较大的压应变，同时对位错产生阻挡效果，以降低InGaAs吸收层中缺陷密度，降低器件暗电流。对于较大失配材料的生长，通常采用构筑“虚拟衬底”的方法，即通过在传统商用衬底上生长晶格常数递变的缓冲层结构，使之从与衬底晶格匹配逐渐过渡至与器件有源区材料晶格匹配，来降低外延层与衬底间的失配，通过该方法可以开拓失配衬底上的失配异变体系新结构材料与器件的研究。不过，目前在InP和GaAs等衬底上通过异变缓冲层结构生长InGaAs材料时，基本都采用In组分逐渐递增的InAlAs异变缓冲层结构，即In组分是正向递变方式，这也比较适合较低In组分时失配度较低的特点，而针对于高In组分时较大失配InGaAs材料的生长，还可以考虑采用In组分反向递变的缓冲层结构。
以GaAs衬底为例，若采用组分反向递变的缓冲层结构制备高In组分InGaAs探测器结构材料时，由于InAs与GaAs间的失配度高达6.7％，因此InAs在GaAs衬底上的临界厚度较薄，容易获得高度弛豫的InAs材料，若在衬底与InAs层间界面处***适当周期的应变补偿超晶格，有望在远离界面的顶层附近获得结晶质量较好的InAs层；此时，再采用常规含铝砷化合物作为缓冲层时，可采用In组分逐渐递减的方式，即In组分由InAs中的100％逐渐递减至吸收层所需的组分。如采用InxAl1-xAs缓冲层时，则将In组分x由1减少至y(y为InyGa1-yAs吸收层中的In组分)，而In组分相同的InAlAs与InGaAs间的晶格常数极为接近，从而实现晶格常数由InAs向InGaAs的逐渐过渡。相对于在GaAs衬底上生长In组分正向递变的缓冲层结构而言，一方面，由于大量的失配位错主要产生在GaAs衬底与InAs层之间，生长在高度弛豫后的InAs层上的InAlAs缓冲层中的穿透位错有望获得降低；另一方面，对于生长高In组分的InGaAs材料来讲，InGaAs与InAs间的失配度相对于GaAs要小很多，如In0.8Ga0.2As与GaAs间的失配度为+5.73％，而与InAs间的失配度仅为-1.34％。因此，采用In组分反向递变的缓冲层结构，在缓冲层厚度一定情况下，可将失配速率控制得尽可能地小，从而减少位错在较大应力作用下产生的滑移等现象，有利于使失配位错湮灭在缓冲层中而不进入吸收层内，从而有望获得结晶质量提高的InGaAs吸收层材料，降低器件暗电流密度。
发明内容
本发明所要解决的技术问题是提供一种用于高In组分InGaAs探测器的突变弛豫缓冲层，该探测器结构可拓展半导体衬底上波长大于1.7μm的InGaAs红外探测器的研制方法，采用In组分反向递变的含铝砷化物异变缓冲层结构，有望较好释放较大失配InGaAs材料中的应变，降低InGaAs吸收层中缺陷密度，提高器件性能。
本发明的一种用于高In组分InGaAs探测器的突变弛豫缓冲层，在半导体衬底上外延InAs突变弛豫层获得平整的材料表面，随后在InAs突变弛豫层上外延In组分反向递变的砷化物异变结构材料作为缓冲层，生长较大失配高In组分InGaAs探测器的缓冲层，从而实现晶格常数由InAs向InGaAs的逐渐过渡。
所述半导体衬底为GaAs、InP、Si或Ge等常见商用衬底。
所述InAs突变弛豫层的厚度为50nm～5μm，以使其完全弛豫。
所述InAs突变弛豫层的In组分为100％。
所述砷化物异变结构材料为三元的InAlAs或InGaAs，或者四元的InAlGaAs。
所述缓冲层中In组分由InAs中的100％反向递变至与吸收层InGaAs中In组分相同。
所述反向递变方式为连续或梯度。
有益效果
(1)本发明提供的缓冲层结构适用于半导体衬底上制备较高In组分的InGaAs红外探测器，尤其适合波长大于1.7μm InxGa1-xAs(x>0.53)探测器的制备，提高了制备高In组分InGaAs探测器在衬底选择上的自由度和结构选择上的多样性。
(2)与GaAs等衬底相比，由于高In组分InxGa1-xAs(x>0.53)与InAs突变弛豫层间的失配度相对较低，使得外延层临界厚度得到一定程度的增加，在维持缓冲层厚度不变的情况下，In组分反向递变的缓冲层结构的失配速率比正向递变时的可以更低，通过低失配速率缓冲层的生长可以减少吸收层中穿透位错密度，有望提高吸收层的结晶质量，改善器件性能。
(3)本发明提供的突变弛豫组分反向递变缓冲层思想对于其他较大失配材料体系的生长同样具有借鉴意义，具有很好的通用性，减小了失配材料生长对于衬底的束缚。
附图说明
图1为本发明的结构示意图；
图2为实施例1的结构示意图；
图3为实施例2的结构示意图。
具体实施方式
下面结合具体实施例，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲授的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等价形式同样落于本申请所附权利要求书所限定的范围。
实施例1
GaAs衬底上适合In0.8Ga0.2As探测器的突变弛豫反向递变缓冲层
(1)采用[100]晶向的GaAs单晶材料作为衬底，采用常规分子束外延方法首先在衬底上生长厚度约为0.5μm的InAs作为突变弛豫层，获得较平整的表面；
(2)再生长In组分反向递变的梯度缓冲层，分别为：厚度0.4μm的In0.9Al0.1As层，厚度0.4μm的In0.85Al0.15As层，厚度0.4μm的In0.8Al0.2As层，即为所需的适合In0.8Ga0.2As探测器的突变弛豫反向递变缓冲层结构。
实施例2
InP衬底上适合In0.8Ga0.2As探测器的突变弛豫反向递变缓冲层
(1)采用[100]晶向的InP单晶材料作为衬底，采用常规分子束外延方法首先在衬底上生长厚度约为1μm的InAs作为突变弛豫层，获得较平整的表面；
(2)接着生长厚度0.1μm的In0.95Al0.05As层；
(3)再生长厚度2μm的In组分反向连续递变的InxAl1-xAs缓冲层，其中x由0.95反向递变至0.8，其失配速率约为0.67％/μm，该结构即为InP衬底上适合In0.8Ga0.2As探测器的突变弛豫反向递变缓冲层结构。

Claims (6)

1.一种用于高In组分InGaAs探测器的突变弛豫缓冲层，其特征在于：在半导体衬底上外延InAs突变弛豫层，随后在InAs突变弛豫层上外延In组分反向递变的砷化物异变结构材料作为缓冲层。
2.根据权利要求1所述的一种用于高In组分InGaAs探测器的突变弛豫缓冲层，其特征在于：所述半导体衬底为GaAs、InP、Si或Ge。
3.根据权利要求1所述的一种用于高In组分InGaAs探测器的突变弛豫缓冲层，其特征在于：所述InAs突变弛豫层的厚度为50nm～5μm。
4.根据权利要求1所述的一种用于高In组分InGaAs探测器的突变弛豫缓冲层，其特征在于：所述砷化物异变结构材料为三元的InAlAs或InGaAs，或者四元的InAlGaAs。
5.根据权利要求1所述的一种用于高In组分InGaAs探测器的突变弛豫缓冲层，其特征在于：所述缓冲层中In组分由InAs中的100％反向递变至与吸收层InGaAs中In组分相同。
6.根据权利要求5所述的一种用于高In组分InGaAs探测器的突变弛豫缓冲层，其特征在于：所述反向递变方式为连续或梯度。
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