CN106856211B - 一种Si(001)衬底上高In组分InGaAs探测器及其制备方法 - Google Patents
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Abstract
本发明涉及一种Si(001)衬底上高In组分InGaAs探测器及其制备方法，所述探测器结构由下往上依次为Si(001)衬底、GaP缓冲层、III族稳态条件下生长的InyAl1‑yAs缓冲层、As稳态条件下生长的InyAl1‑yAs缓冲层、InxGa1‑xAs吸收层和InyAl1‑yAs帽层。制备方法为依次外延生长即可。本发明可以实现在Si(001)衬底上制备短波红外高In组分InGaAs探测器，适合于发展大规模红外焦平面阵列和低成本器件。
Description
技术领域
本发明属于半导体光电子材料及器件领域，特别涉及一种Si(001)衬底上高In组分InGaAs探测器及其制备方法。
背景技术
与InP衬底晶格匹配的In0.53Ga0.47As三元系材料具有直接带隙和高电子迁移率的特点，其室温下的禁带宽度约0.75eV,对应的波长约1.7微米，恰好可以覆盖光纤通信波段，因此采用In0.53Ga0.47As三元系材料制作的光电探测器在光通信领域获得了普遍应用，并且在遥感、传感和成像等方面也有重要用途。在遥感领域，截止波长大于1.7微米的探测器有着更广泛的用途，能反应更多的信息。比如，2.1微米附近的探测在冰云检测和矿产资源探测方面均有重要价值，所以在气象、环境、资源等航天遥感领域具有重要的应用。通过增加InxGa1-xAs三元系材料中III族元素In元素的组分x可以减小InGaAs材料的禁带宽度，从而增加InGaAs探测器的截止波长。比如，x＝0.7时，InGaAs探测器的截止波长就能达到约2.2微米。但是，In组分的增加会造成InGaAs材料与InP衬底不再晶格匹配，从而在材料中引入位错，造成材料和器件性能变差。通过在InP衬底和InGaAs吸收层之间***缓冲层，可以将位错主要限制在缓冲层中，减少InGaAs吸收层中的位错，提高In组分InGaAs探测器的性能，已经获得了一些进展。
短波红外InGaAs探测器航天遥感InGaAs探测器的发展趋势之一是制备更大规模、更多像素的焦平面阵列。与InP衬底相比，Si衬底具有更大的尺寸和更优的质量，采用Si衬底研制InGaAs探测器可以制备更大规模焦平面，同时更易与读出电路耦合。然而，采用Si替代衬底时，InGaAs与衬底间的晶格失配度远大于InP衬底，Si上III-V外延还具有大热失配和反相畴问题，所以在Si衬底上开展高In组分InGaAs探测器外延具有很大的挑战。
Si衬底上III-V族器件的办法主要有两大类。第一类是键合，将Si衬底与III-V族外延材料通过键合的方式组合在一起，然后再进行后续器件工艺。但是高质量大尺寸衬底的键合仍具有很高难度，键合的界面对器件特性也有很大影响。第二类方式是在Si衬底上外延生长III-V族材料，Si衬底上外延生长GaAs、Si衬底上先外延Ge再生长GaAs、Si衬底上外延GaSb均取得了一些进展，但是这些方式采用的Si衬底多采用斜切或具有一定偏角的衬底，给器件制备增加了很大难度，同时材料质量也分别存在着一些退化。所以，迫切需要发展Si(001)衬底上制备高In组分InGaAs探测器的方法，以发展大规模多像素焦平面阵列。
发明内容
本发明所要解决的技术问题是提供一种Si(001)衬底上高In组分InGaAs探测器及其制备方法，该探测器适合于发展大规模红外焦平面阵列和低成本器件。
本发明的一种Si(001)衬底上高In组分InGaAs探测器，所述探测器结构由下往上依次为Si(001)衬底、GaP缓冲层、III族稳态条件下生长的InyAl1-yAs缓冲层、As稳态条件下生长的InyAl1-yAs缓冲层、InxGa1-xAs吸收层和InyAl1-yAs帽层；其中，0.52<y<1，0.53<x<1。
所述III族稳态条件下生长的InyAl1-yAs缓冲层的厚度为30nm～100nm。
所述As稳态条件下生长的InyAl1-yAs缓冲层的厚度为500nm～2μm。
所述As稳态条件下生长的InyAl1-yAs缓冲层同时作为下接触层，InyAl1-yAs帽层同时作为上接触层。
两种InyAl1-yAs缓冲层和InyAl1-yAs帽层与InxGa1-xAs吸收层晶格常数相同。
本发明的一种Si(001)衬底上高In组分InGaAs探测器的制备方法，包括：
(1)在Si(001)衬底上生长GaP缓冲层；
(2)在III族稳态条件下继续生长高In组分的InyAl1-yAs缓冲层；
(3)在As稳态条件下继续生长高In组分的InyAl1-yAs缓冲层，同时作为下接触层；
(4)继续生长高In组分InxGa1-xAs吸收层；
(5)继续生长高In组分的InyAl1-yAs帽层，同时作为上接触层；
(6)利用常规半导体工艺对生长的外延片进行光刻台面、钝化、沉积接触电极，制备得到探测器。
有益效果
本发明在Si(001)正晶向衬底上制备高In组分InGaAs探测器，无需键合，直接外延探测器全结构，简便易行、控制精确，有助于发展大规模、高像素短波红外InGaAs探测器焦平面阵列，并可以实现低成本；制备方法还可用于Si(001)衬底上制备其他III-V族材料与器件，具有很好的通行性。
附图说明
图1是本发明的Si(001)衬底上高In组分InGaAs探测器的结构示意图；
图2是实施例1的Si(001)衬底上In0.7Ga0.3As探测器的结构示意图；
图3是实施例2的Si(001)衬底上In0.83Ga0.17As探测器的结构示意图。
具体实施方式
下面结合具体实施例，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲授的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等价形式同样落于本申请所附权利要求书所限定的范围。
实施例1
本实施例以Si(001)衬底上制备In0.7Ga0.3As探测器为例，举例说明本发明的方法，如图2所示，该制备方法步骤如下：
(1)在Si(001)衬底上生长1μm厚GaP缓冲层，材料基本晶格匹配；
(2)在III族稳态条件下生长50nm厚In0.69Al0.31As缓冲层，V/III比＝2；
(3)在As稳态条件下生长1μm厚In0.69Al0.31As缓冲层(同时作为下接触层)，V/III比＝30，采用Si掺杂，电子浓度为3×1018cm-3；
(4)生长2μm厚不掺杂的In0.7Ga0.3As吸收层；
(5)生长500nm厚In0.69Al0.31As帽层(同时作为上接触层)，采用Be掺杂，空穴浓度为5×1018cm-3；
(6)利用常规半导体工艺对生长的外延片进行光刻台面、钝化、沉积接触电极等，制备出探测器件。经检测，截止波长约2.2微米。
实施例2
本实施例以Si(001)衬底上制备In0.83Ga0.17As探测器为例，举例说明本发明的方法，如图3所示，该制备方法步骤如下：
(1)在Si(001)衬底上生长1.5μm厚GaP缓冲层；
(2)在III族稳态条件下生长80nm厚In0.82Al0.18As缓冲层，V/III比＝1.5；
(3)在As稳态条件下生长800nm厚In0.82Al0.18As缓冲层(同时作为下接触层)，V/III比＝50，采用Si掺杂，电子浓度为3×1018cm-3；
(4)生长1.5μm厚不掺杂的In0.83Ga0.17As吸收层；
(5)生长500nm厚In0.82Al0.18As帽层(同时作为上接触层)，采用Be掺杂，空穴浓度为5×1018cm-3；
(6)利用常规半导体工艺对生长的外延片进行光刻台面、钝化、沉积接触电极等，制备出探测器件。经检测，截止波长约2.6微米。
Claims (6)
1.一种Si(001)衬底上高In组分InGaAs探测器，其特征在于：所述探测器结构由下往上依次为Si(001)衬底、GaP缓冲层、III族稳态条件下生长的InyAl1-yAs缓冲层、As稳态条件下生长的InyAl1-yAs缓冲层、InxGa1-xAs吸收层和InyAl1-yAs帽层；其中，0.52<y<1，0.53<x<1。
2.根据权利要求1所述的一种Si(001)衬底上高In组分InGaAs探测器，其特征在于：所述III族稳态条件下生长的InyAl1-yAs缓冲层的厚度为30nm～100nm。
3.根据权利要求1所述的一种Si(001)衬底上高In组分InGaAs探测器，其特征在于：所述As稳态条件下生长的InyAl1-yAs缓冲层的厚度为500nm～2μm。
4.根据权利要求1所述的一种Si(001)衬底上高In组分InGaAs探测器，其特征在于：所述As稳态条件下生长的InyAl1-yAs缓冲层同时作为下接触层，InyAl1-yAs帽层同时作为上接触层。
5.根据权利要求1所述的一种Si(001)衬底上高In组分InGaAs探测器，其特征在于：两种InyAl1-yAs缓冲层和InyAl1-yAs帽层与InxGa1-xAs吸收层晶格常数相同。
6.一种如权利要求1所述的Si(001)衬底上高In组分InGaAs探测器的制备方法，包括：
(1)在Si(001)衬底上生长GaP缓冲层；
(2)在III族稳态条件下继续生长高In组分的InyAl1-yAs缓冲层；
(3)在As稳态条件下继续生长高In组分的InyAl1-yAs缓冲层，同时作为下接触层；
(4)继续生长高In组分InxGa1-xAs吸收层；
(5)继续生长高In组分的InyAl1-yAs帽层，同时作为上接触层；
(6)利用常规半导体工艺对生长的外延片进行光刻台面、钝化、沉积接触电极，制备得到探测器。
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