CN104576317A - Growth method of heterojunction material adopting AlGaN channel layer - Google Patents

Growth method of heterojunction material adopting AlGaN channel layer Download PDF

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Publication number
CN104576317A
CN104576317A CN201410769404.7A CN201410769404A CN104576317A CN 104576317 A CN104576317 A CN 104576317A CN 201410769404 A CN201410769404 A CN 201410769404A CN 104576317 A CN104576317 A CN 104576317A
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growth
algan
layer
heterojunction material
channel layer
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董逊
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CETC 55 Research Institute
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CETC 55 Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

The invention provides a growth method of a heterojunction material adopting an AlGaN channel layer. The growth method comprises the following steps: 1, selecting a (0001) face sapphire substrate, and pretreating the substrate surface at a hydrogen atmosphere; 2, sequentially growing a GaN nucleating layer, an AlxGa1-xN channel layer, an AIN interposition layer and an InyAl1-yN barrier layer on the substrate, wherein x is smaller than 0.1 and greater than 0, and y is smaller than 0.2 and greater than 0. The growth method has the advantages that the two-dimensional electron gas migration rate of the prepared InAlN/AlGaN heterojunction material at a room temperature reaches 551cm<2> v<-1> s<-1>, and the two-dimensional electron gas concentration is 1.94*10<13>cm<-2>; the method is suitable for the study of high-current, high-power and high-breakdown semiconductor devices, has great repeatability and meets industrial application requirements; the method is simple, feasible and compatible with the existing technology for growing the AlGaN/GaN heterojunction material through an MOCVD process, and cannot cause any pollution to an MOCVD system.

Description

A kind of growing method adopting the heterojunction material of AlGaN channel layer
Technical field
What the present invention relates to is a kind of heterojunction material structure and growing method of adopting AlGaN channel layer, belongs to semiconductor device production field.
Background technology
Power semiconductor is key technology and the basic technology of energy-saving and emission-reduction, is widely used in consumer electronics, new-energy automobile, photovoltaic generation, wind-powered electricity generation, Industry Control etc.China's most area haze weather takes place frequently in recent years, and under this background, the extensive power semiconductor technologies that uses improves energy efficiency, promotes energy-saving and emission-reduction, becomes the important directions of semicon industry development.
The mainstay material of current power semiconductor or silicon, as material of future generation, can realize SiC and the GaN power component lower than silicon cell loss and receive much attention.Traditional GaN base power device adopts the AlGaN/GaN heterojunction material using GaN material as channel layer to make.Compared with AlGaN/GaN, InAlN/AlGaN heterojunction boundary difference in band gap is larger, can produce higher two-dimensional electron gas, is very beneficial for making high power device; Meanwhile, AlGaN raceway groove is compared with GaN raceway groove, and energy gap is larger, puncture voltage is higher, is more suitable for the development of withstand voltage higher power semiconductor.Shown in composition graphs 1, InAlN/AlGaN heterojunction material structure comprises substrate 1, GaN nucleating layer 2, AlGaN channel layer 3, AlN insert layer 4 and InAlN barrier layer 5.
Summary of the invention
What the present invention proposed is a kind of growing method adopting the heterojunction material of AlGaN channel layer, its object is intended to overcome the deficiencies in the prior art, design a kind of heterojunction material of employing AlGaN channel layer being more suitable for big current, high withstand voltage power semiconductor development, and the growing method of this material is provided further.
Technical solution of the present invention is: the growing method adopting the heterojunction material of AlGaN channel layer, comprises following processing step:
1) choose (0001) surface sapphire (1) substrate, and in a hydrogen atmosphere surface preparation is carried out to described substrate;
2) growing GaN nucleating layer, Al successively over the substrate xga 1-xn channel layer, AIN insert layer and In yal 1-yn barrier layer, wherein 0 < x < 0.1,0 < y < 0.2.
Advantage of the present invention: the InAlN/AlGaN heterojunction material room temperature two-dimensional electron gas mobility of preparation reaches 551 cm 2v -1s -1, two-dimensional electron gas 1.94 × 10 13cm -2, be suitable for big current, the development that high-power, height punctures semiconductor device, and this process is reproducible, meets commercial Application requirement.The inventive method is simple, precipitates with existing MOCVD(metal-organic chemical vapor) method grows AlGaN/GaN heterojunction material process compatible, and can not cause any pollution to MOCVD system.
Feature in the above each side of the present invention can independent assortment within the scope of the invention, as long as and not by the restriction of its order---the technical scheme after combination drops in connotation of the present invention.
Accompanying drawing explanation
Accompanying drawing 1 is the profile of InAlN/AlGaN heterojunction material structure.
Accompanying drawing 2 is InAlN/AlGaN heterojunction material square resistance distribution map.
Embodiment
Below in conjunction with the drawings and specific embodiments, illustrate the present invention further, these execution modes should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after reading this disclosure, the amendment of those skilled in the art to the various equivalent form of value of the present invention all falls within the claim limited range of the application.
Contrast Fig. 1, InAlN/AlGaN heterojunction material, five layers, its structure, is followed successively by substrate 1, GaN nucleating layer 2, AlGaN channel layer 3, AIN insert layer 4 and InAlN barrier layer 5 from lower to upper.
Its growing method, comprises following processing step:
1) choose (0001) surface sapphire (1) substrate, and in a hydrogen atmosphere surface preparation is carried out to described substrate;
2) growing GaN nucleating layer, Al successively over the substrate xga 1-xn channel layer, AIN insert layer and In yal 1-yn barrier layer, wherein 0 < x < 0.1,0 < y < 0.2.
Described growing GaN nucleating layer growth temperature is 520 ~ 560 DEG C, and growth air pressure is 450 ~ 550 millimetress of mercury, and growth source is ammonia, trimethyl gallium, and growth thickness is 20 ~ 30 nm.
The growth temperature of described growth AlGaN channel layer is 1000 ~ 1100 DEG C, and growth air pressure is 50 ~ 100 millimetress of mercury, and growth source is ammonia, trimethyl gallium, trimethyl aluminium, and growth thickness is 1 ~ 3 μm.
The growth temperature of described growing AIN insert layer is 1000 ~ 1100 DEG C, and growth air pressure is 50 ~ 100 millimetress of mercury, and growth source is ammonia, trimethyl aluminium, and growth thickness is 1 ~ 2 nm.
Described growth In yal 1-ythe growth temperature of N barrier layer is 750 ~ 800 DEG C, and growth air pressure is 50 ~ 150 millimetress of mercury, and growth source is ammonia, trimethyl indium and trimethyl aluminium, and growth thickness is 3 ~ 20 nm, 0 < y < 0.2.
Embodiment 1
What the present embodiment 1 provided comprises the following steps in the method for (0001) surface sapphire substrate epitaxial growth InAlN/AlGaN heterojunction material:
S1, use MOCVD device (19 × 2 " Thomas Swan Close Coupled Showerhead), choose the Sapphire Substrate in (0001) face, substrate is placed on the graphite base of SiC coating.
S2, system are warming up to 1100 DEG C, and arranging air pressure is 50 millimetress of mercury, at H 2carry out surface preparation to Sapphire Substrate under (flow 40 L/min) atmosphere, remove surface contamination, the processing time is 5 minutes.
S3, be cooled to 550 DEG C, pass into ammonia (NH 3), trimethyl gallium (TMGa), growth thickness is the low temperature GaN nucleating layer of 25 nm, growth air pressure be 500 millimetress of mercury, be used in line reflection rate tester monitoring low temperature GaN nucleating layer thickness.
S4, be warming up to 1050 DEG C, pass into ammonia (NH 3), trimethyl gallium (TMGa), trimethyl aluminium (TMAl), growth thickness is the Al of 2 μm 0.05ga 0.95n channel layer, growth air pressure is 100 millimetress of mercury.
The growth temperature of S5, maintenance 1050 DEG C, passes into ammonia (NH 3), trimethyl aluminium (TMAl), growth thickness is the AlN insert layer of 1 nm, growth air pressure be 100 millimetress of mercury.
S6, be cooled to 770 DEG C, pass into ammonia (NH 3), trimethyl indium (TMIn) and trimethyl aluminium (TMAl), growth thickness is the In of 7 nm 0.17al 0.83n barrier layer, growth air pressure is 50 millimetress of mercury.
S7, closedown growth source, cooling.
Utilize Lehighton 1500C noncontact sheet resistance tester test material square resistance Mapping distribute, as shown in Figure 2.Utilize vanderburg method by Bio-Rad 5900 +the room temperature two-dimensional electron gas mobility of Hall test instrument test material and concentration.
Embodiment 2
As different from Example 1:
In S4 step, be warming up to 1050 DEG C, pass into ammonia (NH 3), trimethyl gallium (TMGa), trimethyl aluminium (TMAl), growth thickness is the Al of 2 μm 0.08ga 0.92n channel layer, growth air pressure is 100 millimetress of mercury.
Embodiment 3
As different from Example 1:
In S6 step, be cooled to 770 DEG C, pass into ammonia (NH 3), trimethyl indium (TMIn) and trimethyl aluminium (TMAl), growth thickness is 5 nm In 0.17al 0.83n barrier layer, growth air pressure is 50 millimetress of mercury.
Experimental data is summed up:
It should be noted that, above-described embodiment describe in detail invention main points of the present invention, those of ordinary skill in the art can according to above-described embodiment disclosed content the process conditions of above steps are simply selected or optimize, such as change AlGaN channel layer, InAlN barrier layer thickness, Al component, or the growth air pressure of other steps, temperature and source flux.
As can be seen from above: a kind of InAlN/AlGaN heterojunction material structure of Patent design of the present invention, and further illustrate the growing method of this heterojunction material.The inventive method is simple, grows AlGaN/GaN heterojunction material process compatible, can not cause any pollution to MOCVD system with existing MOCVD method.

Claims (5)

1. adopt the growing method of the heterojunction material of AlGaN channel layer, it is characterized in that the method comprises following processing step:
1) choose (0001) surface sapphire (1) substrate, and in a hydrogen atmosphere surface preparation is carried out to described substrate;
2) growing GaN nucleating layer, Al successively over the substrate xga 1-xn channel layer, AIN insert layer and In yal 1-yn barrier layer, wherein 0 < x < 0.1,0 < y < 0.2.
2. the growing method of InAlN/AlGaN heterojunction material according to claim 1, it is characterized in that: described growing GaN nucleating layer growth temperature is 520 ~ 560 DEG C, growth air pressure is 450 ~ 550 millimetress of mercury, and growth source is ammonia, trimethyl gallium, and growth thickness is 20 ~ 30 nm.
3. the growing method of InAlN/AlGaN heterojunction material according to claim 1, it is characterized in that: the growth temperature of described growth AlGaN channel layer is 1000 ~ 1100 DEG C, growth air pressure is 50 ~ 100 millimetress of mercury, growth source is ammonia, trimethyl gallium, trimethyl aluminium, and growth thickness is 1 ~ 3 μm.
4. the growing method of InAlN/AlGaN heterojunction material according to claim 1, it is characterized in that: the growth temperature of described growing AIN insert layer is 1000 ~ 1100 DEG C, growth air pressure is 50 ~ 100 millimetress of mercury, and growth source is ammonia, trimethyl aluminium, and growth thickness is 1 ~ 2 nm.
5. the growing method of InAlN/AlGaN heterojunction material according to claim 1, is characterized in that: described growth In yal 1-ythe growth temperature of N barrier layer is 750 ~ 800 DEG C, and growth air pressure is 50 ~ 150 millimetress of mercury, and growth source is ammonia, trimethyl indium and trimethyl aluminium, and growth thickness is 3 ~ 20 nm, 0 < y < 0.2.
CN201410769404.7A 2014-12-15 2014-12-15 Growth method of heterojunction material adopting AlGaN channel layer Pending CN104576317A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070158683A1 (en) * 2005-12-13 2007-07-12 Sheppard Scott T Semiconductor devices including implanted regions and protective layers and methods of forming the same
CN102931229A (en) * 2012-11-06 2013-02-13 中国电子科技集团公司第五十五研究所 AlGaN/GaN/InGaN double hetero-junction material and production method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070158683A1 (en) * 2005-12-13 2007-07-12 Sheppard Scott T Semiconductor devices including implanted regions and protective layers and methods of forming the same
CN102931229A (en) * 2012-11-06 2013-02-13 中国电子科技集团公司第五十五研究所 AlGaN/GaN/InGaN double hetero-junction material and production method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
薛军帅: "新型氮化物InAlN半导体异质结构与HEMT器件研究", 《中国优秀博士学位论文全文数据库信息科技辑》 *

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