CN104569052B - Method for preparing graphene oxide sensor - Google Patents
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- CN104569052B CN104569052B CN201410788111.3A CN201410788111A CN104569052B CN 104569052 B CN104569052 B CN 104569052B CN 201410788111 A CN201410788111 A CN 201410788111A CN 104569052 B CN104569052 B CN 104569052B
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- graphene oxide
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Abstract
The invention provides a method for preparing a graphene oxide sensor. The method comprises the following specific steps: (1) dispersing graphene oxide in a solvent, and forming stable graphene oxide dispersion liquid; (2) performing surface functionalization treatment on a metal nanowire material; (3) adding the metal nanowire subjected to surface functionalization treatment in the step (2) into the graphene oxide dispersion liquid in the step (1), uniformly mixing so as to form a mixed solution of graphene oxide and metal nanowire; (4) carrying out stirring reaction on the mixed solution in the step (3) at the temperature of 30-200 DEG C for 1-300 minutes so as to form a graphene oxide coated metal nanowire structure, wherein a continuous current path is not formed between the metal nanowires; and (5) by taking the graphene oxide coated metal nanowire structure in the step (4) as a sensitive material of the sensor, preparing the graphene oxide sensor. The method contributes to improving the sensing characteristics of the device.
Description
Technical field
The present invention relates to a kind of method preparing graphene oxide sensor, more particularly, to a kind of using metal nanometer line and
The method that graphene oxide composite material prepares senser element.Belong to the technical field of sophisticated semiconductor material preparation.
Background technology
It has been found that its more and more excellent performance after Graphene is found.Such as high intensity, height is led
Electrically, high sensing sensitivity etc..As the important derivatives of Graphene, graphene oxide also receives and more and more weighs
Depending on.Current research it has been shown that graphene oxide has excellent sensing characteristicses, its to vapor, ammonia, nitrogen dioxide,
There is sensitive response in the multiple gases such as hydrogen sulfide.Among these especially with the sensitiveest to the response of vapor, its remolding sensitivity passes
System vapor sensing (or humidity sensor) high two orders of magnitude.Graphene oxide derives to the high sensitivity characteristic of vapor
The oxy radical that its surface is enriched.These oxy radicals and hydrone stronger interaction are that graphene oxide high-performance is wet
The basis of degree sensor.In addition, being also possible to produce the high sensitivity to other gases through modified graphene oxide composite material
Response.There is very high power of test such as through the graphene oxide after suitable reduction to nitrogen dioxide.
Although graphene oxide has excellent sensing capabilities, the traditional double being built using graphene oxide composite material is electric
The senser element of pole structure has the shortcomings of electric leakage is larger, and in the case of low gas concentration, electric capacity is too little, sensing whirls stagnant big.These lack
Point limits the manufacture of sensor and application based on graphene oxide.Solve these problems, need to improve the structure of device
Or build new device architecture.Such as, researcher is had to have studied the senser element of top-bottom electrode structures and planar electrode structure
Response characteristic, find that the former has preferable response characteristic.But the senser element of top-bottom electrode structures needs using complicated
The ventilative upper electrode arrangement of technique preparation.Also researcher is had to have studied sensor nano wire being used as Top electrode.Due to
Nano wire Top electrode has preferable ventilating performance, therefore can significantly improve the performance of device.Comprehensive current research situation
It can be found that several researchers have proposed more method to lift the sensing characteristicses of sensor although having, but still have very
Many problems need to solve further.Based on this research background, it is a kind of desirable for designing and preparing new device architecture, significantly carries
The method of high device performance.
Content of the invention
The problem existing for prior art, the present invention provides a kind of method preparing graphene oxide sensor, uses
Graphene oxide and metal nanometer line are raw material, and both are mixed to form the double-deck knot of graphene oxide coated metal nano wire
Structure, and prepare graphene sensor, improve the sensitivity characteristic of device, and be conducive to fast device response and reduce device
Whirl stagnant.
The technical scheme is that：A kind of method preparing graphene oxide sensor, comprises the following steps that：
(1) graphene oxide is scattered in solvent, forms stable graphene oxide dispersion；
(2) surface-functionalized process is carried out to metal nano wire material, make what metal nanometer line can be stable to be scattered in step
(1) in the graphene oxide dispersion described in and affine with graphene oxide；
(3) take the metal nanometer line after surface-functionalized process in step (2), be added to the oxidation stone described in step (1)
In black alkene dispersion liquid, mix homogeneously, form graphene oxide and metal nanometer line mixed liquor；
(4) by after the stirring reaction 1-300 minute at 30 DEG C -200 DEG C of the mixed liquor in step (3), formed with oxidation
The mixed liquor of Graphene coated metal nano thread structure, described mixed liquor can prepare non-conductor thin film, namely described metal
Do not form continuous current path between nano wire；
(5) using the mixed liquor with graphene oxide coated metal nano thread structure described in step (4) as sensor
Sensitive material, prepare graphene oxide sensor.
Further, after the completion of the graphene oxide sensor preparation described in step (5), at post growth annealing
Reason, described post growth annealing temperature is 100 DEG C -600 DEG C, and annealing time is 5 seconds -300 minutes.Increase metal nanometer line to substrate
Adhesive capacity and nano wire between adhesive capacity.
Further, described in step (5), graphene oxide sensor includes：The dielectric substrate of bottom, is covered in insulation
The electrode of substrate surface, is covered in the insulating barrier of electrode surface, and is covered in the sensitive material of surface of insulating layer, that is,：Band aerobic
The mixed liquor of graphite alkene coated metal nano thread structure.
Further, the described graphene oxide being enclosed with metal nanometer line, using spraying process, spin-coating method or LB film
Method, is covered in surface of insulating layer.
Further, if described insulating substrate material insulant, then directly use；If not insulant, then exist
Its surface covers electrode after preparing dielectric isolation layer again.
Further, the material of described insulating barrier is silicon oxide, silicon nitride, Barium metatitanate. or barium strontium titanate.
Further, the lamella number of plies of graphene oxide described in step (1) is 1-20 layer, and it is micro- that lamella is smaller in size than 50
Rice；Metal nano linear diameter is less than 1 micron, and nanowire length is less than 50 microns.
Further, solvent described in step (1) be water, ethanol, benzene, toluene, hexamethylene, dimethyl sulfoxide, Ketocyclopentane,
One of Ketohexamethylene, chloroform or two or more combinations.
Further, the structure of graphene oxide coated metal nano wire described in step (4), including：Graphene oxide
In the middle of parcel nano wire, graphene oxide wraps up nano wire head and centre, and graphene oxide layer entirety coated metal is received
Rice noodle.
Further, electrode described in step (5) is plane interdigital structure.
Beneficial effect：Using the present invention there is the preparation of suitable large area, process is simple, cost relatively low it is adaptable to multiple materials
The advantages of material.
1., when two metal nanometer lines being coated with graphene oxide contact with each other, the interface of contact is metal-oxygen
The sandwich of graphite alkene-metal.Wherein sensitive material remains as graphene oxide.Due to conventional plane electrode type sensing
Device is typically in the form of interdigital electrode, and the Electric Field Distribution between interdigital electrode can affect the sensitivity of device.Actually pitch
The most of electric field referring in electrode structure is all not passed through sensitive material, and the responsive type causing this structure reduces.And work as quick
After adding metal nanometer line in sense material, the Electric Field Distribution between interdigital electrode can produce change.Nano wire can make electric field line more
Plus trend towards being distributed in inside sensitive material.Therefore this structure is conducive to improving the sensitivity characteristic of device.
2. because sensitizing range is present in the place of two Nanowire contacts, the spacing of metal nanometer line conductor is little, when receiving
Rice noodle has overall electric capacity during more contact point larger, can be convenient for measuring.
3. because sensitizing range is present in the place of two Nanowire contacts, its contact area is less, is conducive to quick device
Part response and reduce device whirl stagnant.
4. metal nanometer line film layer structure is ventilating structure, and this structure is conducive to the diffusion of gas, is conducive to improving device
The performance of part.
5. large area preparation can be carried out using this method, technique is relatively easy.
Brief description
Fig. 1：Prepare a kind of schematic diagram of package structure using graphene oxide and metal nanometer line.Wherein, 1：Metal is received
Rice noodle；2：Graphene oxide sheet；3：Wrap the metal nanometer line of graphene oxide.The structure that is wrapped of metal nanometer line may
There are multiple situation, such as I：In the middle of graphene oxide parcel nano wire；II graphene oxide parcel nano wire head and centre；
III graphene oxide layer entirety coated metal nano wire.
Fig. 2：A kind of typical device junction composition.Wherein, 4：The metal nanometer line wrapping graphene oxide is in device table
The sensitive layer that face is formed；5：Insulating barrier；6：Electrode；7：Dielectric substrate.
Fig. 3：The sectional view of device A-A '.Wherein, 4：The metal nanometer line wrapping graphene oxide is in device surface shape
The sensitive layer becoming；5：Insulating barrier；6：Electrode；7：Dielectric substrate.
Fig. 4：Insulating substrate material is not insulant, then cover the device of electrode after dielectric isolation layer is prepared on its surface again
Part structure chart.Wherein, 4：Wrap the sensitive layer that the metal nanometer line of graphene oxide is formed in device surface；5：Insulating barrier；
6：Electrode；7：Dielectric substrate；8：Dielectric isolation layer.
Specific embodiment
The present invention is further illustrated below in conjunction with the accompanying drawings.
A kind of method preparing graphene oxide sensor, comprises the following steps that：
(1) by the 0.2mg lamella number of plies be 10 layers, the graphene oxide of a size of 45 microns of lamella be scattered in the water of 10ml
In, form stable graphene oxide dispersion；Wherein：Water could alternatively be water, ethanol, benzene, toluene, hexamethylene, dimethyl
One of sulfoxide, Ketocyclopentane, Ketohexamethylene, chloroform or two or more combinations, no affect on this experimental result.Actual preparation
When, in 1-20 layer, lamella is smaller in size than 50 microns to the lamella number of plies of graphene oxide.
(2) to a diameter of 0.8 micron, length be that 45 microns of nanowires of gold material carries out surface-functionalized process, process
Method is as follows：Add TGA in nanowires of gold dispersion liquid, be sufficiently stirred for, so that dried nanowires of gold can be stablized
Be scattered in the graphene oxide dispersion described in step (1) and affine with graphene oxide.When reality is selected, metal nano
Linear diameter is less than 1 micron, and nanowire length is less than 50 microns.
Wherein：Nanowires of gold could alternatively be nano silver wire, copper nano-wire, Pt nanowires, palladium nanometer wire or sijna rice
Line, for nano silver wire, adds polyvinyl alcohol, 50 degrees centigrade are sufficiently stirred in nanowire dispersion body.Other
Nano wire can be with similar process.Every kind of nano wire needs, using different functionalized reagents, can select as needed.
(3) take the metal nanometer line after surface-functionalized process in 0.5mg step (2), be added to the oxygen described in step (1)
In graphite alkene dispersion liquid, mix homogeneously, form graphene oxide and metal nanometer line mixed liquor, described mixed liquor can be prepared into
To non-conductor thin film；
(4) by after the stirring reaction 100 minutes at 30 DEG C of the mixed liquor in step (3), form graphene oxide trapping gold
Belong to the structure of nano wire；Wherein：Mixed liquor at 30 DEG C stirring reaction 300 minutes, at 200 DEG C stirring reaction 1 minute or
At 100 DEG C, stirring reaction all can form the structure of graphene oxide coated metal nano wire for 80 minutes.Described graphene oxide
The structure of coated metal nano wire, including：Graphene oxide parcel nano wire in the middle of, graphene oxide parcel nano wire head and
Centre, and graphene oxide layer entirety coated metal nano wire；As shown in Figure 1.
(5) using the structure of the graphene oxide coated metal nano wire described in step (4) as sensor sensitive material,
Prepare graphene oxide sensor.Specifically, as shown in Figure 2,3, graphene oxide sensor includes：The insulation lining of bottom
Bottom 7, is covered in the electrode 6 of the plane interdigital structure of insulated substrate surface, is covered in the insulating barrier 5 of electrode surface, and is covered in
The graphene oxide 4 being enclosed with metal nanometer line of surface of insulating layer.It is enclosed with the graphene oxide of metal nanometer line, using spray
Coating, spin-coating method or LB embrane method, are covered in surface of insulating layer.
Wherein：If described insulating substrate material insulant, then directly use；If not insulant, then in its table
Face covers electrode (as shown in Figure 4) again after preparing dielectric isolation layer 8.
The material of described insulating barrier 5 is silicon oxide, silicon nitride, Barium metatitanate. or barium strontium titanate.
As preferred embodiment：After the completion of graphene oxide sensor preparation described in step (5), after adopting
Annealing process is processed, and described post growth annealing anneal at 80 DEG C 300 minutes, annealed 30 minutes or 600 at 100 DEG C
Anneal 10 seconds at DEG C.Metal nanometer line all can be increased to the adhesion energy between the adhesive capacity of substrate and nano wire
Power.
When two metal nanometer lines being coated with graphene oxide contact with each other, the interface of contact is metal-oxide
The sandwich of Graphene-metal.Wherein sensitive material remains as graphene oxide.Due to conventional plane electrode type sensor
Typically in the form of interdigital electrode, and the Electric Field Distribution between interdigital electrode can affect the sensitivity of device.Actually interdigital
Most of electric field in electrode structure is all not passed through sensitive material, and the responsive type causing this structure reduces.And when sensitivity
After adding metal nanometer line in material, the Electric Field Distribution between interdigital electrode can produce change.Nano wire can make electric field line more
Trend towards being distributed in inside sensitive material.Therefore this structure is conducive to improving the sensitivity characteristic of device.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention.The affiliated skill of the present invention
Has usually intellectual, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations in art field.Cause
This, protection scope of the present invention ought be defined depending on those as defined in claim.
Claims (10)
1. a kind of method preparing graphene oxide sensor it is characterised in that：Comprise the following steps that：
(1) graphene oxide is scattered in solvent, forms stable graphene oxide dispersion；
(2) surface-functionalized process is carried out to metal nano wire material, make what metal nanometer line can be stable to be scattered in step (1) institute
In the graphene oxide dispersion stated and affine with graphene oxide；
(3) take the metal nanometer line after surface-functionalized process in step (2), be added to the graphene oxide described in step (1)
In dispersion liquid, mix homogeneously, form graphene oxide and metal nanometer line mixed liquor；
(4) by after the stirring reaction 1-300 minute at 30 DEG C -200 DEG C of the mixed liquor in step (3), formed and carry graphite oxide
The mixed liquor of alkene coated metal nano thread structure, described mixed liquor can prepare non-conductor thin film, namely metal nanometer line it
Between do not form continuous current path；
(5) will be quick as sensor for the mixed liquor with graphene oxide coated metal nano thread structure described in step (4)
Sense material, prepares graphene oxide sensor.
2. a kind of method preparing graphene oxide sensor according to claim 1 it is characterised in that：In step (5)
After the completion of described graphene oxide sensor preparation, processed using post growth annealing, described post growth annealing temperature is 100
DEG C -600 DEG C, annealing time is 5 seconds -300 minutes.
3. a kind of method preparing graphene oxide sensor according to claim 1 it is characterised in that：In step (5)
Described graphene oxide sensor includes：The dielectric substrate of bottom, is covered in the electrode of insulated substrate surface, is covered in electrode table
The insulating barrier in face, and it is covered in the sensitive material of surface of insulating layer, that is,：With graphene oxide coated metal nano thread structure
Mixed liquor.
4. a kind of method preparing graphene oxide sensor according to claim 3 it is characterised in that：Described it is enclosed with
The graphene oxide of metal nanometer line, using spraying process, spin-coating method or LB embrane method, it is covered in surface of insulating layer.
5. a kind of method preparing graphene oxide sensor according to claim 3 it is characterised in that：Described insulation lining
If bottom material insulant, then directly use；If not insulant, then cover again after dielectric isolation layer is prepared on its surface
Electrode.
6. a kind of method preparing graphene oxide sensor according to claim 3 it is characterised in that：Described insulating barrier
Material be silicon oxide, silicon nitride, Barium metatitanate. or barium strontium titanate.
7. a kind of method preparing graphene oxide sensor according to claim 1 it is characterised in that：In step (1)
The lamella number of plies of described graphene oxide is 1-20 layer, and lamella is smaller in size than 50 microns；Metal nano linear diameter is less than 1 micron,
Nanowire length is less than 50 microns.
8. a kind of method preparing graphene oxide sensor according to claim 1 it is characterised in that：In step (1)
Described solvent is one of water, ethanol, benzene, toluene, hexamethylene, dimethyl sulfoxide, Ketocyclopentane, Ketohexamethylene, chloroform or two
Plant above combination.
9. a kind of method preparing graphene oxide sensor according to claim 1 it is characterised in that：In step (4)
The structure of described graphene oxide coated metal nano wire, including：In the middle of graphene oxide parcel nano wire, graphene oxide bag
Wrap up in nano wire head and centre, and graphene oxide layer entirety coated metal nano wire.
10. a kind of method preparing graphene oxide sensor according to claim 3 it is characterised in that：In step (5)
Described electrode is plane interdigital structure.
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| CN104833707B (en) * | 2015-05-29 | 2018-03-30 | 南京信息工程大学 | A kind of plane gas-sensitive sensing element and preparation method thereof |
| CN105092646B (en) * | 2015-08-19 | 2017-09-26 | 电子科技大学 | A kind of graphene/metal oxide is combined film gas transducer and preparation method thereof |
| CN106546650A (en) * | 2015-09-17 | 2017-03-29 | 江南石墨烯研究院 | A kind of highly sensitive lead ion sensor |
| CN106198631B (en) * | 2016-06-27 | 2019-09-24 | 京东方科技集团股份有限公司 | A kind of semiconductor hydrogen gas sensor and preparation method thereof |
| CN107064242B (en) * | 2017-04-11 | 2020-01-17 | 西南交通大学 | Molybdenum disulfide doped nano silver particle composite humidity sensor and preparation method thereof |
| CN107389234B (en) * | 2017-07-19 | 2019-09-13 | 华中科技大学 | A kind of piezoresistive transducer and preparation method thereof for making separation layer based on nano wire |
| CN109870489B (en) * | 2019-02-28 | 2022-03-04 | 上海集成电路研发中心有限公司 | Method for preparing graphene oxide in humidity sensor |
| CN112683959B (en) * | 2019-10-17 | 2023-08-18 | 北京石墨烯研究院 | Humidity-sensitive composition, flexible humidity sensor and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101042363A (en) * | 2007-04-27 | 2007-09-26 | 电子科技大学 | polyaniline nanometer oxidate compound film micro-gas sensors array and method for making same |
| CN102174702A (en) * | 2011-01-11 | 2011-09-07 | 湖南大学 | Preparation method for metallic nano-particle and graphene composite |
| CN102323300A (en) * | 2011-07-18 | 2012-01-18 | 浙江大学 | Polyelectrolyte and graphene composite resistive moisture sensor and manufacturing method thereof |
| CN102636522A (en) * | 2012-03-29 | 2012-08-15 | 浙江大学 | Graphene/ stannic oxide nanometer compounding resistance type film gas sensor and manufacturing method thereof |
| CN102653396A (en) * | 2011-03-02 | 2012-09-05 | 浙江大学 | Highly dispersed graphene sheet composite material regularly modified by metal nanodot and in-situ preparation method |
| CN104078164A (en) * | 2014-07-10 | 2014-10-01 | 厦门大学 | Manufacturing method of copper nano wire network wrapped by graphene carbon film |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101286106B1 (en) * | 2011-05-30 | 2013-07-16 | 한국과학기술연구원 | The method for producing graphene by chemical exfoliation |
| KR101408105B1 (en) * | 2012-07-26 | 2014-06-19 | 한국과학기술원 | Composite materials of graphene and one dimensional metal oxide, method for fabricating the same and sensors comprising the same |
| KR101430397B1 (en) * | 2012-08-28 | 2014-08-22 | 한국과학기술원 | Graphene-nanoparticle composite catalyst-decorated metal oxide nanorod, method for fabricating the same and sensors comprising the same |
-
2014
- 2014-12-17 CN CN201410788111.3A patent/CN104569052B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101042363A (en) * | 2007-04-27 | 2007-09-26 | 电子科技大学 | polyaniline nanometer oxidate compound film micro-gas sensors array and method for making same |
| CN102174702A (en) * | 2011-01-11 | 2011-09-07 | 湖南大学 | Preparation method for metallic nano-particle and graphene composite |
| CN102653396A (en) * | 2011-03-02 | 2012-09-05 | 浙江大学 | Highly dispersed graphene sheet composite material regularly modified by metal nanodot and in-situ preparation method |
| CN102323300A (en) * | 2011-07-18 | 2012-01-18 | 浙江大学 | Polyelectrolyte and graphene composite resistive moisture sensor and manufacturing method thereof |
| CN102636522A (en) * | 2012-03-29 | 2012-08-15 | 浙江大学 | Graphene/ stannic oxide nanometer compounding resistance type film gas sensor and manufacturing method thereof |
| CN104078164A (en) * | 2014-07-10 | 2014-10-01 | 厦门大学 | Manufacturing method of copper nano wire network wrapped by graphene carbon film |
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