CN104539144A - IGBT parallel driving circuit - Google Patents
IGBT parallel driving circuit Download PDFInfo
- Publication number
- CN104539144A CN104539144A CN201410853145.6A CN201410853145A CN104539144A CN 104539144 A CN104539144 A CN 104539144A CN 201410853145 A CN201410853145 A CN 201410853145A CN 104539144 A CN104539144 A CN 104539144A
- Authority
- CN
- China
- Prior art keywords
- igbt
- circuit
- signal input
- input interface
- high level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/38—Means for preventing simultaneous conduction of switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The invention discloses an IGBT parallel driving circuit which comprises an optical signal input interface circuit, an electric signal input interface circuit, a simultaneous high level preventing circuit, an IGBT driving circuit and IGBT modules. The optical signal input interface circuit and the electric signal input interface circuit are respectively connected with the simultaneous high level preventing circuit. The simultaneous high level preventing circuit is connected with the IGBT driving circuit. The IGBT driving circuit is connected with the IGBT modules respectively. The IGBT parallel driving circuit has the advantages that parallel connection of multiple IGBT modules is achieved, and the consistency of the output current at the transient state and the output current at the steady state of the IGBT modules can be guaranteed; optical signal input interfaces and electric signal input interfaces are provided for applications of different power levels; the IGBT modules are adopted for isolating a driving chip to guarantee high reliability and perfect protection function of a driving board; driving resistance of a traditional G end is evenly distributed to a G end and an E end, and circulation influences of the IGBT modules are reduced; the abnormal state of simultaneous high level can be restricted for levels of input signals.
Description
Technical field
The present invention relates to a kind of IGBT parallel driver circuit, the present invention is applicable to charger, belongs to the power electronic equipment control fields such as battery charging and discharging equipment.
Background technology
At present, traditional charger and battery charging and discharging equipment need to use Large Copacity IGBT (Insulated Gate Bipolar Transistor along with the lifting of power grade and the increase of output current, insulated gate bipolar transistor) module, at present the Infineon of Germany, Japanese fuji have rated voltage more than 1700V, 3300V and rated current more than the IGBT module of 1000A.Because single Large Copacity IGBT module is expensive, bring the significantly rising of complete machine cost, at present, generally adopt the pattern of low capacity IGBT parallel connection to reach the replacement scheme of dilatation.
Such as, application number is the programmable IGBT driving circuit apparatus that patent discloses a kind of electromagnetic oven of CN200710030279.8, its feature is to comprise programmable IGBT driving circuit control chip device, pulsewidth circuit for regulating and controlling PWM, and wherein said pulsewidth circuit for regulating and controlling PWM is formed primarily of low-power consumption twin voltage comparator LM393,8050 type triodes and 8550 type triodes.The present invention can carry out comprehensive monitoring to IGBT circuit and accurately control, and is conducive to the useful life of prolongation IGBT circuit and simplifies pwm circuit structure, improving the reliability of product, reduce enterprise's production cost; Solve and can only carry out monitor and forecast to signals such as line voltage, sensor temperature, electric currents existing for electromagnetic oven Driving technique, monitor and forecast cannot be carried out to the IGBT driving condition of electromagnetic oven, make the operating frequency of its uncontrollable electromagnetic oven, also with regard to pan that None-identified is dissimilar, more cannot provide optimal IGBT drive singal to different pan, electric current or temperature information can only be leaned on to do the problem of rough adjustment.
Such as, application number be CN201110288629.7 patent discloses a kind of novel high-frequency high-voltage switch power supply IGBT drive circuit, comprise ON-OFF control circuit (1), pulse transformer buffer circuit (2) and voltage stabilizing circuit (3) composition; Front controller MCU is input to high speed two-way driven in phase device MC33152 after producing IGBT drive singal; Output connects the primary circuit of pulse transformer buffer circuit, is transferred to secondary circuit via the isolation of pulse transformer buffer circuit; The output of pulse transformer secondary circuit connects the input of voltage stabilizing circuit, and the output of voltage stabilizing circuit then accesses grid and the emitter-base bandgap grading of IGBT respectively.Input stage voltage fluctuation is little, switching response is fast, it is low in energy consumption to turn on and off, input stage and grid completely isolated, in voltage stabilizing circuit, series resistance effectively can suppress high-frequency parasiticoscillation.
Such as, application number be CN201210340272.7 patent discloses a kind of IGBT drive circuit, it drives input power (V2) to be connected to the input power port (Vc) of intelligent drives chip (U1), drives input power (V2) also as the input power of source of stable pressure (V1) simultaneously.The output voltage of source of stable pressure (V1) carries out dividing potential drop through the bleeder circuit be composed in series by resistance (R3) and voltage-stabiliser tube (D2).First electric capacity (C2) is in parallel with resistance (R3), and the second electric capacity (C3) is in parallel with voltage-stabiliser tube (D2).The positive pole of the first electric capacity (C2) is connected with one end of charging resistor (R4), and the other end of charging resistor (R4) is connected with the collector electrode of NPN triode (Q1); Be connected with the grid (G) of IGBT after the emitter of NPN triode (Q1) is connected with the emitter of PNP triode (Q2); The collector electrode of PNP triode (Q2) is connected with one end of discharge resistance (R5), and the other end of discharge resistance (R5) is connected with the negative pole of the second electric capacity (C3).
In sum, conventional art mainly adopts three kinds of technical schemes to realize parallel connection:
One, IGBT is in parallel by current sharing inductor, and each IGBT respectively needs one piece of drive plate, but uses same road drive singal.
Two, IGBT is in parallel by brachium pontis, and each brachium pontis is various needs inductance, drive plate and current sensor and drive singal independence.
Three, not by current-sharing device, same drive plate is used to control plural IGBT module.
First and second technical scheme cost is higher above, and the third technical scheme technical sophistication, can not ensure the consistency of IGBT module output current when transient state and stable state.
Summary of the invention
The object of the present invention is to provide a kind of IGBT parallel driver circuit that can overcome above-mentioned technical problem, the present invention includes: light signal input interface circuit, signal of telecommunication input interface circuit, prevent from being all high level circuit, IGBT drive circuit, IGBT module; Described light signal input interface circuit, signal of telecommunication input interface circuit respectively with prevent being all high level circuit and be connected, described in prevent being all high level circuit and be connected with IGBT drive circuit, described IGBT drive circuit is connected with IGBT module respectively.
Input signal of the present invention supports the signal of telecommunication to drive and light signal drives; Owing to adopting IGBT module isolation drive chip make driving force improve and support active-clamp technology, so it is in parallel that the present invention is applicable to multichannel IGBT module; The present invention can ensure that the consistency of drive singal also can reduce the circulation impact of IGBT module.
Owing to needing the drive plate of high reliability during IGBT module parallel, therefore, the consistency of electric current when stable state and transient state when the present invention can ensure IGBT module parallel, the present invention can provide the input interface of light signal input interface and the signal of telecommunication to ensure that drive plate normally works under the environment of high-power, high electromagnetism simultaneously.
The present invention has very important effect in field of power electronics; the driving interface of IGBT module is outputted to if there is INA, INB of being all high level; IGBT module will be caused to run through short circuit; the protective circuit by IGBT driving chip is now needed to explode to prevent IGBT module because of overheat short circuit; if but under severe applied environment, repeat this phenomenon; because frequently impacting by Short-Circuit High Current, IGBT module will occur that fatigue effect is finally damaged, the present invention can overcome the above problems well.
Unified for the traditional driving resistance G terminal being placed on IGBT module is changed into be placed on IGBT module respectively G terminal and E terminal in the present invention, the circulation problem caused because E terminal current potential between module is different when significantly reducing IGBT module parallel, because, if circulation phenomenon seriously will make IGBT module parallel lose efficacy.
Advantage of the present invention is:
1. what achieve with multiple IGBT module is in parallel, and can ensure the consistency of IGBT module output current when transient state and stable state.
2. the application for different capacity grade provides light signal and signal of telecommunication input interface.
3. adopt IGBT module isolation drive chip to ensure the high reliability of drive plate and perfect defencive function.
4. traditional G is held and drive resistance to be evenly distributed to G end and E end, reduce the circulation impact of IGBT module.
5. the level achieved for input signal can suppress to be all the abnormality of high level.
Accompanying drawing explanation
Fig. 1 is the integrated circuit structural representation of a kind of IGBT parallel driver circuit of the present invention;
Fig. 2 is the electrical block diagram of the specific embodiment of the light signal input interface circuit of a kind of IGBT parallel driver circuit of the present invention.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the present invention is described in detail.As shown in Figure 1, the present invention includes: light signal input interface circuit, signal of telecommunication input interface circuit, prevent from being all high level circuit, IGBT drive circuit, IGBT module; Described light signal input interface circuit, signal of telecommunication input interface circuit respectively with prevent being all high level circuit and be connected, described in prevent being all high level circuit and be connected with IGBT drive circuit, described IGBT drive circuit is connected with IGBT module respectively.
Fig. 2 is light signal input interface circuit, and in Fig. 2, U4 is fiber-optic signal receiver, and U7 is inverter, and C20, C21, C24, C22 are electric capacity, and R103, R104, R105, R115 are resistance.
In Fig. 2, when after external fiber Signal transmissions to fiber-optic signal receiver U4, by obtaining the PWM1 signal needed after peripheral resistance-capacitance circuit filtering through inverter U7 shaping, in like manner, PWM2 signal obtains by same circuit.
Input signal of the present invention supports the signal of telecommunication to drive and light signal drives, owing to adopting IGBT module isolation drive chip make driving force improve and support active-clamp technology, so it is in parallel that the present invention is applicable to multichannel IGBT module; The present invention can ensure that the consistency of drive singal also can reduce the circulation impact of IGBT module.Owing to needing the drive plate of high reliability during IGBT module parallel, therefore, when the present invention can ensure IGBT module parallel, the present invention simultaneously of the consistency of electric current when stable state and transient state can provide the input interface of light signal input interface and the signal of telecommunication to ensure that drive plate normally works under the environment of high-power, high electromagnetism simultaneously.The present invention has very important effect in field of power electronics; the driving interface of IGBT module is outputted to if there is INA, INB of being all high level; IGBT module will be caused to run through short circuit; the protective circuit by IGBT driving chip is now needed to explode to prevent IGBT module because of overheat short circuit; if but under severe applied environment, repeat this phenomenon; because frequently impacting by Short-Circuit High Current, IGBT module will occur that fatigue effect is finally damaged, the present invention can overcome the above problems well.In addition, unified for the traditional driving resistance G terminal being placed on IGBT module is changed into be placed on IGBT module respectively G terminal and E terminal in the present invention, the circulation problem caused because E terminal current potential between module is different when significantly reducing IGBT module parallel, because, if circulation phenomenon seriously will make IGBT module parallel lose efficacy.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in scope disclosed by the invention; the change that can expect easily or replacement, all should be encompassed in the protection range of the claims in the present invention.
Claims (2)
1. an IGBT parallel driver circuit, is characterized in that, comprising: light signal input interface circuit, signal of telecommunication input interface circuit, prevent from being all high level circuit, IGBT drive circuit, IGBT module; Described light signal input interface circuit, signal of telecommunication input interface circuit respectively with prevent being all high level circuit and be connected, described in prevent being all high level circuit and be connected with IGBT drive circuit, described IGBT drive circuit is connected with IGBT module respectively.
2. a kind of IGBT parallel driver circuit according to claim 1, is characterized in that, G terminal and E terminal that described IGBT parallel driver circuit will drive resistance to be placed on IGBT module respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410853145.6A CN104539144A (en) | 2014-12-31 | 2014-12-31 | IGBT parallel driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410853145.6A CN104539144A (en) | 2014-12-31 | 2014-12-31 | IGBT parallel driving circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104539144A true CN104539144A (en) | 2015-04-22 |
Family
ID=52854632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410853145.6A Pending CN104539144A (en) | 2014-12-31 | 2014-12-31 | IGBT parallel driving circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104539144A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795975A (en) * | 2015-04-29 | 2015-07-22 | 永济新时速电机电器有限责任公司 | High-voltage IGBT protecting function collection device |
| CN106230409A (en) * | 2016-08-25 | 2016-12-14 | 中车株洲电力机车研究所有限公司 | A kind of IGBT parallel drivers of band NTC acquisition function |
-
2014
- 2014-12-31 CN CN201410853145.6A patent/CN104539144A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795975A (en) * | 2015-04-29 | 2015-07-22 | 永济新时速电机电器有限责任公司 | High-voltage IGBT protecting function collection device |
| CN106230409A (en) * | 2016-08-25 | 2016-12-14 | 中车株洲电力机车研究所有限公司 | A kind of IGBT parallel drivers of band NTC acquisition function |
| CN106230409B (en) * | 2016-08-25 | 2023-05-26 | 中车株洲电力机车研究所有限公司 | IGBT parallel driver with NTC acquisition function |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103177698B (en) | A kind of LED backlight drive circuit and backlight module | |
| CN103199678B (en) | Compact type insulated gate bipolar transistor (IGBT) module driving unit | |
| CN104505030A (en) | Backlight drive circuit, driving method thereof and liquid-crystal display device | |
| EP2939345A1 (en) | Driving circuit for igbt module | |
| CN104201870B (en) | IGBT (insulated-gate bipolar transistor) drive circuit for double fiber interfaces | |
| CN104539144A (en) | IGBT parallel driving circuit | |
| CN105048794A (en) | Insulated Gate Bipolar Transistor (IGBT) driver interlock circuit with power-on time delay function | |
| CN109256952A (en) | Switching Power Supply | |
| CN103490759A (en) | Electronic relay and control method thereof | |
| CN103001620A (en) | Gate-modified IGBT (insulated gate bipolar transistor) driving circuit | |
| CN203708119U (en) | A unit combined type rectifier | |
| CN202806629U (en) | High-side driving circuit | |
| CN110365195A (en) | A kind of three level IGBT drive circuits based on QP12W05S-37 | |
| CN115864793A (en) | Double-push-pull driving circuit based on parallel connection of silicon carbide modules and motor controller | |
| CN215581092U (en) | Power semiconductor device driving circuit | |
| CN205283887U (en) | LED dimmer circuit and LED drive circuit | |
| CN204425735U (en) | A kind of LED voltage increase and current constant source and LED lamp | |
| CN203233299U (en) | IGBT drive circuit for braking of urban rail vehicle traction converter | |
| CN202435253U (en) | IGBT drive integrated device | |
| CN103415118B (en) | Backlight drive circuit, electronic installation and backlight driving method | |
| CN204168140U (en) | IGBT drive module, motor drive controller and power-driven system | |
| CN203574624U (en) | Switch control circuit | |
| CN210201744U (en) | Optimized half-bridge type ultrasonic power driving circuit | |
| CN103052226B (en) | LED (Light Emitting Diode) switching power supply and multimode dimming circuit thereof | |
| CN203225906U (en) | Electro-magnetic induction double-loop heating control device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150422 |