CN104538475A - Method for manufacturing energy-accumulation photoelectricity CIGS solar cell - Google Patents
Method for manufacturing energy-accumulation photoelectricity CIGS solar cell Download PDFInfo
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- CN104538475A CN104538475A CN201510009711.XA CN201510009711A CN104538475A CN 104538475 A CN104538475 A CN 104538475A CN 201510009711 A CN201510009711 A CN 201510009711A CN 104538475 A CN104538475 A CN 104538475A
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- 238000000034 method Methods 0.000 title abstract description 14
- 238000009825 accumulation Methods 0.000 title abstract 10
- 230000005622 photoelectricity Effects 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000003792 electrolyte Substances 0.000 claims abstract description 42
- 239000011521 glass Substances 0.000 claims abstract description 38
- 238000004544 sputter deposition Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000004146 energy storage Methods 0.000 claims description 63
- 230000004888 barrier function Effects 0.000 claims description 22
- 238000002156 mixing Methods 0.000 claims description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 18
- 229910052738 indium Inorganic materials 0.000 claims description 18
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 18
- 238000002360 preparation method Methods 0.000 claims description 18
- 238000003825 pressing Methods 0.000 claims description 18
- -1 ammonium tetrafluoroborate Chemical compound 0.000 claims description 12
- 239000011232 storage material Substances 0.000 claims description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 229920000767 polyaniline Polymers 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 claims description 4
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 claims description 4
- SIXOAUAWLZKQKX-UHFFFAOYSA-N carbonic acid;prop-1-ene Chemical compound CC=C.OC(O)=O SIXOAUAWLZKQKX-UHFFFAOYSA-N 0.000 claims description 4
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 claims description 4
- 239000011244 liquid electrolyte Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000004964 aerogel Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 claims description 2
- 230000010220 ion permeability Effects 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical group O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims 1
- GNMQOUGYKPVJRR-UHFFFAOYSA-N nickel(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Ni+3].[Ni+3] GNMQOUGYKPVJRR-UHFFFAOYSA-N 0.000 claims 1
- PZFKDUMHDHEBLD-UHFFFAOYSA-N oxo(oxonickeliooxy)nickel Chemical compound O=[Ni]O[Ni]=O PZFKDUMHDHEBLD-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract 4
- 230000005611 electricity Effects 0.000 abstract 3
- 239000012528 membrane Substances 0.000 abstract 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 16
- 239000010408 film Substances 0.000 description 16
- 229910052711 selenium Inorganic materials 0.000 description 16
- 239000011669 selenium Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 10
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000005245 sintering Methods 0.000 description 8
- 239000007921 spray Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
The invention discloses a method for manufacturing an energy-accumulation photoelectricity CIGS solar cell. The method is characterized in that structural layers of the energy-accumulation photoelectricity CIGS solar cell sequentially comprise a top surface conductive glass substrate, a CIGS electricity-accumulation layer, a first electrolyte layer, a membrane, a second electrolyte layer, an electricity-accumulation layer and a bottom surface conductive glass substrate from top to bottom, and the top surface conductive glass substrate and the bottom surface conductive glass substrate serve as counter electrodes. The energy-accumulation material CIGS layer is manufactured through a mixed sputtering method, wherein the energy-accumulation material and the CIGS generate a special structure, so the conductivity of the energy-accumulation material itself is enhanced; electrolytes and the membrane are additionally arranged in the solar cell, and therefore the problem of electron conduction in the energy accumulation process is solved. According to the method, an externally arranged electricity accumulation device is not needed, the function of converting light energy into the electricity energy and the function of accumulating the electricity energy are integrated in the same structure, and a non-light-energy charging function is achieved.
Description
The application is the applying date: within 2012, June 11, application number are: 2012101907356, name is called: the divisional application of a kind of energy storage photoelectric CIGS solar cell and preparation method.
Technical field
The present invention relates to energy technology field, particularly relate to a kind of preparation method of solar cell.
Background technology
Along with the energy and environmental crisis are day by day serious, finding the new reproducible energy is becoming a problem demanding prompt solution.Solar energy is inexhaustible, and green renewable.Wherein thin film solar technology started to rise in recent years, because it has the advantages such as lightweight, cost is low, easy installation.Copper Indium Gallium Selenide (CIGS) is most effective in thin-film solar cells, but existing solar cell is only light energy converter, convert solar energy into electrical energy output, at present how also only just conversion ratio is improved to the research of solar energy, storage for electric energy is only the energy storage device adding a simple function in outside, because additional device is not portable, directly limit the development of solar cell miniaturization.
Summary of the invention
The present invention has opto-electronic conversion and energy storage two kinds of functions in the preparation method of the energy storage photoelectric CIGS solar cell of one for avoiding the weak point existing for above-mentioned prior art to provide a kind of simultaneously, can while light energy conversion be electric energy to obtaining energy storage photoelectric CIGS solar cell, a part of electrical power storage can be got up, a part of electric energy is used for exporting in addition.
The present invention is that technical solution problem adopts following technical scheme:
The design feature of energy storage photoelectric CIGS solar cell of the present invention is: the structure sheaf arranging described energy storage photoelectric CIGS solar cell is followed successively by from top to bottom: end face Conducting Glass, CIGS accumulate layer, the first electrolyte layer, barrier film, the second electrolyte layer, accumulate layer and bottom surface Conducting Glass, using described end face Conducting Glass and bottom surface Conducting Glass as to electrode.
The feature of energy storage photoelectric CIGS solar cell of the present invention is also:
Energy storage material for the preparation of described CIGS accumulate layer is material with carbon element or polyaniline compound material, and the energy storage material for the preparation of described accumulate layer is metal oxide or polyaniline compound material.
Described material with carbon element is the nanometer spherical material with carbon element prepared by charcoal-aero gel; Described metal oxide is MnO
2, NiO or Ni
2o
3; Described polyaniline compound material is polyaniline.
The thickness of described CIGS accumulate layer is 500-2000 μm.
Electrolyte in described first electrolyte layer and the second electrolyte layer is liquid electrolyte, described liquid electrolyte be dimethyl carbonate, diethyl carbonate, propene carbonate, ethylene carbonate and methyl ethyl carbonate wherein a kind of with monomethyl triethyl group ammonium tetrafluoroborate and tetraethyl ammonium tetrafluoroborate in a kind of mixture, described mixture ratio is in molar ratio 1: 1.
Described barrier film has ion permeability.
The feature of the preparation method of energy storage photoelectric CIGS solar cell of the present invention is carried out as follows:
A, by mixing sputtering method, copper, indium, gallium and energy storage material are sputtered on the conducting surface of end face Conducting Glass, after selenizing, form CIGS accumulate layer;
B, on the conducting surface of bottom surface Conducting Glass, with energy storage material with spraying or deposition mode form accumulate layer;
C, between CIGS accumulate layer and accumulate layer, insert barrier film, inject electrolyte after pressing, between CIGS accumulate layer and barrier film, form the first electrolyte layer respectively, between accumulate layer and barrier film, form the second electrolyte layer; The Rotating fields be made up of described end face Conducting Glass, CIGS accumulate layer, the first electrolyte layer, barrier film, the second electrolyte layer, accumulate layer and bottom surface Conducting Glass is carried out sealing in periphery and forms energy storage photoelectric CIGS solar cell.
The feature of the preparation method of energy storage photoelectric CIGS solar cell of the present invention is also that the temperature of the mixing sputtering method in described step a is 200-500 DEG C.
Compared with the prior art, beneficial effect of the present invention is embodied in:
1, the present invention is by the energy storage material cigs layer prepared of mixing sputtering method, wherein energy storage material and CIGS create special structure, add the conductivity of energy storage material itself simultaneously, add electrolyte and barrier film in solar cells simultaneously, solve the problem of electrical conductivity in thermal energy storage process, based on above structure, energy storage photoelectric CIGS solar cell of the present invention can while being electric energy by light energy conversion, a part of electrical power storage can be got up, a part of electric energy is used for exporting in addition.
2, individual hour of prepared in the process of the present invention complete energy storage photoelectric CIGS solar cell 1-4 under solar simulator irradiates, its open circuit voltage is 0.5 ~ 0.7V, the CIGS solar cell only with opto-electronic conversion is compared, the open circuit voltage of energy storage photoelectric CIGS solar cell does not reduce, 200-400 hour is placed in postradiation for solar simulator energy storage photoelectric CIGS solar cell dark place, and its open circuit voltage is 0.2 ~ 0.3V.
Accompanying drawing explanation
Fig. 1 is the structural representation of energy storage photoelectric CIGS solar cell of the present invention;
Number in the figure: 1 end face Conducting Glass; 2 is CIGS accumulate layer; 3 first electrolyte layers; 4 barrier films; 5 second electrolyte layers; 6 accumulate layers; 7 bottom surface Conducting Glass.
Embodiment
Embodiment 1:
By mixing sputtering method at 200 DEG C, 0.45g copper, 0.15g indium, 0.35g gallium and 1g carbosphere are splashed on the conducting surface of end face Conducting Glass 1, then under selenium atmosphere, carry out selenizing form the CIGS accumulate layer 2 that thickness is 500 μm, in the process mixing sputtering and selenizing, get copper in mass ratio: indium: gallium: selenium: carbosphere is 9: 3: 7: 15: 20;
Spray metal oxide NiO in bottom surface Conducting Glass 7, accumulate layer 6 is formed with 300 DEG C of sintering, pressing is carried out insert barrier film 4 between CIGS accumulate layer 2 and accumulate layer 6 after, be 1: 1 injection tetraethyl ammonium tetrafluoroborate and dimethyl carbonate more by volume in the device of pressing, form the first electrolyte layer 3 and the second electrolyte layer 5 respectively, then seal in the periphery of device, form energy storage photoelectric CIGS solar cell.
Energy storage photoelectric CIGS solar cell prepared by the present embodiment is after solar simulator irradiates 2 hours, and its open circuit voltage is 0.67V; Postradiation energy storage photoelectric CIGS solar cell dark place is placed 400 hours, and its open circuit voltage is 0.23V.Solar simulator has decayed 9.6% after irradiating lower Fast simulation discharge and recharge 5000 times, and measuring its open circuit voltage is 0.60V.
Embodiment 2:
By mixing sputtering method at 200 DEG C, 0.45g copper, 0.15g indium, 0.35g gallium and 1.2g carbosphere are splashed on the conducting surface of end face Conducting Glass 1, then under selenium atmosphere, carry out selenizing form the CIGS accumulate layer 2 that thickness is 700 μm, in the process mixing sputtering and selenizing, get copper in mass ratio: indium: gallium: selenium: carbosphere is 9: 3: 7: 15: 24;
Bottom surface Conducting Glass 7 sprays polyaniline, accumulate layer 6 is formed with 300 DEG C of sintering, pressing is carried out insert barrier film 4 between CIGS accumulate layer 2 and accumulate layer 6 after, be 1: 1 injection monomethyl triethyl group ammonium tetrafluoroborate and dimethyl carbonate more by volume in the device of pressing, form the first electrolyte layer 3 and the second electrolyte layer 5 respectively, then seal in the periphery of device, form energy storage photoelectric CIGS solar cell.
Energy storage photoelectric CIGS solar cell prepared by the present embodiment is after solar simulator irradiates 2 hours, and its open circuit voltage is 0.70V; Postradiation energy storage photoelectric CIGS solar cell dark place is placed 380 hours, and its open circuit voltage is 0.26V.
Embodiment 3:
By mixing sputtering method at 300 DEG C, 0.45g copper, 0.15g indium, 0.35g gallium and 1.4g carbosphere are splashed on the conducting surface of end face Conducting Glass 1, then under selenium atmosphere, carry out selenizing form the CIGS accumulate layer 2 that thickness is 900 μm, in the process mixing sputtering and selenizing, get copper in mass ratio: indium: gallium: selenium: carbosphere is 9: 3: 7: 15: 28;
Spray metal oxide M nO in bottom surface Conducting Glass 7
2accumulate layer 6 is formed with 300 DEG C of sintering, pressing is carried out insert barrier film 4 between CIGS accumulate layer 2 and accumulate layer 6 after, be 1: 1 injection tetraethyl ammonium tetrafluoroborate and diethyl carbonate more by volume in the device of pressing, form the first electrolyte layer 3 and the second electrolyte layer 5 respectively, then seal in the periphery of device, form energy storage photoelectric CIGS solar cell.
Energy storage photoelectric CIGS solar cell prepared by the present embodiment is after solar simulator irradiates 2.5 hours, and its open circuit voltage is 0.69V; Postradiation energy storage photoelectric CIGS solar cell dark place is placed 350 hours, and its open circuit voltage is 0.22V.
Embodiment 4:
By mixing sputtering method at 300 DEG C, 0.45g copper, 0.15g indium, 0.35g gallium and 1.6g carbosphere are splashed on the conducting surface of end face Conducting Glass 1, then under selenium atmosphere, carry out selenizing form the CIGS accumulate layer 2 that thickness is 1100 μm, in the process mixing sputtering and selenizing, get copper in mass ratio: indium: gallium: selenium: carbosphere is 9: 3: 7: 15: 32;
Spray metal oxide Ni in bottom surface Conducting Glass 7
2o
3accumulate layer 6 is formed with 300 DEG C of sintering, pressing is carried out insert barrier film 4 between CIGS accumulate layer 2 and accumulate layer 6 after, be 1: 1 injection monomethyl triethyl group ammonium tetrafluoroborate and diethyl carbonate more by volume in the device of pressing, form the first electrolyte layer 3 and the second electrolyte layer 5 respectively, then seal in the periphery of device, form energy storage photoelectric CIGS solar cell.
Energy storage photoelectric CIGS solar cell prepared by the present embodiment is after solar simulator irradiates 2.5 hours, and its open circuit voltage is 0.67V; Postradiation energy storage photoelectric CIGS solar cell dark place is placed 400 hours, and its open circuit voltage is 0.23V.
Embodiment 5:
By mixing sputtering method at 400 DEG C, 0.45g copper, 0.15g indium, 0.35g gallium and 1.8g carbosphere are splashed on the conducting surface of end face Conducting Glass 1, then under selenium atmosphere, carry out selenizing form the CIGS accumulate layer 2 that thickness is 1300 μm, in the process mixing sputtering and selenizing, get copper in mass ratio: indium: gallium: selenium: carbosphere is 9: 3: 7: 15: 36;
Spray metal oxide NiO in bottom surface Conducting Glass 7, accumulate layer 6 is formed with 300 DEG C of sintering, pressing is carried out insert barrier film 4 between CIGS accumulate layer 2 and accumulate layer 6 after, be 1: 1 injection tetraethyl ammonium tetrafluoroborate and propene carbonate more by volume in the device of pressing, form the first electrolyte layer 3 and the second electrolyte layer 5 respectively, then seal in the periphery of device, form energy storage photoelectric CIGS solar cell.
Energy storage photoelectric CIGS solar cell prepared by the present embodiment is after solar simulator irradiates 3 hours, and its open circuit voltage is 0.70V; Postradiation energy storage photoelectric CIGS solar cell dark place is placed 370 hours, and its open circuit voltage is 0.21V.
Embodiment 6:
By mixing sputtering method at 200 DEG C, 0.45g copper, 0.15g indium, 0.35g gallium and 2g carbosphere are splashed on the conducting surface of end face Conducting Glass 1, then under selenium atmosphere, carry out selenizing form the CIGS accumulate layer 2 that thickness is 1500 μm, in the process mixing sputtering and selenizing, get copper in mass ratio: indium: gallium: selenium: carbosphere is 9: 3: 7: 15: 40;
Spray metal oxide Ni in bottom surface Conducting Glass 7
2o
3accumulate layer 6 is formed with 300 DEG C of sintering, pressing is carried out insert barrier film 4 between CIGS accumulate layer 2 and accumulate layer 6 after, be 1: 1 injection monomethyl triethyl group ammonium tetrafluoroborate and propene carbonate more by volume in the device of pressing, form the first electrolyte layer 3 and the second electrolyte layer 5 respectively, then seal in the periphery of device, form energy storage photoelectric CIGS solar cell.
Energy storage photoelectric CIGS solar cell prepared by the present embodiment is after solar simulator irradiates 3 hours, and its open circuit voltage is 0.67V; Postradiation energy storage photoelectric CIGS solar cell dark place is placed 360 hours, and its open circuit voltage is 0.25V.
Embodiment 7:
By mixing sputtering method at 500 DEG C, 0.45g copper, 0.15g indium, 0.35g gallium and 2.2g carbosphere are splashed on the conducting surface of end face Conducting Glass 1, then under selenium atmosphere, carry out selenizing form the CIGS accumulate layer 2 that thickness is 1700 μm, in the process mixing sputtering and selenizing, get copper in mass ratio: indium: gallium: selenium: carbosphere is 9: 3: 7: 15: 44;
Spray metal oxide NiO in bottom surface Conducting Glass 7, accumulate layer 6 is formed with 300 DEG C of sintering, pressing is carried out insert barrier film 4 between CIGS accumulate layer 2 and accumulate layer 6 after, be 1: 1 injection tetraethyl ammonium tetrafluoroborate and ethylene carbonate more by volume in the device of pressing, form the first electrolyte layer 3 and the second electrolyte layer 5 respectively, then seal in the periphery of device, form energy storage photoelectric CIGS solar cell.
Energy storage photoelectric CIGS solar cell prepared by the present embodiment is after solar simulator irradiates 3.5 hours, and its open circuit voltage is 0.68V; Postradiation energy storage photoelectric CIGS solar cell dark place is placed 370 hours, and its open circuit voltage is 0.23V.
Embodiment 8:
By mixing sputtering method at 500 DEG C, 0.45g copper, 0.15g indium, 0.35g gallium and 2.4g carbosphere are splashed on the conducting surface of end face Conducting Glass 1, then under selenium atmosphere, carry out selenizing form the CIGS accumulate layer 2 that thickness is 500 μm, in the process mixing sputtering and selenizing, get copper in mass ratio: indium: gallium: selenium: carbosphere is 9: 3: 7: 15: 48;
Bottom surface Conducting Glass 7 sprays polyaniline, accumulate layer 6 is formed with 300 DEG C of sintering, pressing is carried out insert barrier film 4 between CIGS accumulate layer 2 and accumulate layer 6 after, be 1: 1 injection monomethyl triethyl group ammonium tetrafluoroborate and ethylene carbonate more by volume in the device of pressing, form the first electrolyte layer 3 and the second electrolyte layer 5 respectively, then seal in the periphery of device, form energy storage photoelectric CIGS solar cell.
Energy storage photoelectric CIGS solar cell prepared by the present embodiment is after solar simulator irradiates 4 hours, and its open circuit voltage is 0.70V; Postradiation energy storage photoelectric CIGS solar cell dark place is placed 350 hours, and its open circuit voltage is 0.25V.
Claims (7)
1. the preparation method of an energy storage photoelectric CIGS solar cell, it is characterized in that: the structure sheaf arranging described energy storage photoelectric CIGS solar cell is followed successively by from top to bottom: end face Conducting Glass (1), CIGS accumulate layer (2), first electrolyte layer (3), barrier film (4), second electrolyte layer (5), accumulate layer (6) and bottom surface Conducting Glass (7), using described end face Conducting Glass (1) and bottom surface Conducting Glass (7) as to electrode, the preparation method of described energy storage photoelectric CIGS solar cell carries out as follows:
A, by mixing sputtering method, copper, indium, gallium and energy storage material are sputtered on the conducting surface of end face Conducting Glass (1), after selenizing, form CIGS accumulate layer (2);
B, on the conducting surface of bottom surface Conducting Glass (7), with energy storage material with spraying or deposition mode form accumulate layer (6);
C, between CIGS accumulate layer (2) and accumulate layer (6), insert barrier film (4), electrolyte is injected after pressing, between CIGS accumulate layer (2) and barrier film (4), form the first electrolyte layer (3) respectively, between accumulate layer (6) and barrier film (4), form the second electrolyte layer (5); The Rotating fields be made up of described end face Conducting Glass (1), CIGS accumulate layer (2), the first electrolyte layer (3), barrier film (4), the second electrolyte layer (5), accumulate layer (6) and bottom surface Conducting Glass (7) is carried out sealing in periphery and forms energy storage photoelectric CIGS solar cell.
2. the preparation method of energy storage photoelectric CIGS solar cell according to claim 1, is characterized in that the temperature of the mixing sputtering method in described step a is 200-500 DEG C.
3. the preparation method of energy storage photoelectric CIGS solar cell according to claim 1, it is characterized in that: the energy storage material for the preparation of described CIGS accumulate layer (2) is material with carbon element or polyaniline compound material, the energy storage material for the preparation of described accumulate layer (6) is metal oxide or polyaniline compound material.
4. the preparation method of energy storage photoelectric CIGS solar cell according to claim 1, is characterized in that: described material with carbon element is the nanometer spherical material with carbon element prepared by charcoal-aero gel; Described metal oxide is MnO2, NiO or Ni2O3; Described polyaniline compound material is polyaniline.
5. the preparation method of the energy storage photoelectric CIGS solar cell according to claim 1,3 or 4, is characterized in that: the thickness of described CIGS accumulate layer (2) is 500-2000 μm.
6. the preparation method of energy storage photoelectric CIGS solar cell according to claim 1, it is characterized in that: the electrolyte in described first electrolyte layer (3) and the second electrolyte layer (5) is liquid electrolyte, described liquid electrolyte be dimethyl carbonate, diethyl carbonate, propene carbonate, ethylene carbonate and methyl ethyl carbonate wherein a kind of with monomethyl triethyl group ammonium tetrafluoroborate and tetraethyl ammonium tetrafluoroborate in a kind of mixture, described mixture ratio is in molar ratio 1: 1.
7. the preparation method of energy storage photoelectric CIGS solar cell according to claim 1, is characterized in that: described barrier film (4) has ion permeability.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111540802A (en) * | 2020-05-19 | 2020-08-14 | 西南石油大学 | Novel solar power generation and energy storage dual-function integrated device structure and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0096866A2 (en) * | 1982-06-11 | 1983-12-28 | Hitachi, Ltd. | Photovoltaic-storage battery device |
| CN101640298A (en) * | 2008-08-01 | 2010-02-03 | 新奥科技发展有限公司 | Photovoltaic secondary battery |
| CN101719573A (en) * | 2009-11-26 | 2010-06-02 | 浙江大学 | Energy storage type solar cell |
| CN101752630A (en) * | 2009-12-15 | 2010-06-23 | 浙江大学 | Solar battery for staggered power generating in situ |
| JP4591667B2 (en) * | 2003-08-27 | 2010-12-01 | 東洋インキ製造株式会社 | Optical functional materials |
-
2012
- 2012-06-11 CN CN201510009711.XA patent/CN104538475B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0096866A2 (en) * | 1982-06-11 | 1983-12-28 | Hitachi, Ltd. | Photovoltaic-storage battery device |
| JP4591667B2 (en) * | 2003-08-27 | 2010-12-01 | 東洋インキ製造株式会社 | Optical functional materials |
| CN101640298A (en) * | 2008-08-01 | 2010-02-03 | 新奥科技发展有限公司 | Photovoltaic secondary battery |
| CN101719573A (en) * | 2009-11-26 | 2010-06-02 | 浙江大学 | Energy storage type solar cell |
| CN101752630A (en) * | 2009-12-15 | 2010-06-23 | 浙江大学 | Solar battery for staggered power generating in situ |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111540802A (en) * | 2020-05-19 | 2020-08-14 | 西南石油大学 | Novel solar power generation and energy storage dual-function integrated device structure and preparation method thereof |
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| CN104538475B (en) | 2016-06-29 |
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