CN104538147A

CN104538147A - Manufacturing method of anisotropic magneto resistive film

Info

Publication number: CN104538147A
Application number: CN201410233996.0A
Authority: CN
Inventors: 刘善善
Original assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corp
Current assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority date: 2014-05-29
Filing date: 2014-05-29
Publication date: 2015-04-22
Anticipated expiration: 2034-05-29
Also published as: CN104538147B

Abstract

The invention discloses a manufacturing method of an anisotropic magneto resistive (AMR) film. The method comprises the steps of 1, providing a silicon nitride film substrate and performing etching pretreatment, 2, performing film forming of an Ni81Fe19 film, 3, performing film forming of a tantalum nitride film, and 4, performing annealing treatment, wherein a film forming technology of the Ni81Fe19 film comprises multi-step deposition and etching technologies. According to the method, an alternate multi-step deposition and etching method is adopted in the film forming technology of the Ni81Fe19 film, so that the film forming quality can be improved, an AMR value of the film can be increased under the condition that the thickness of the film is not increased, the magnetic characteristic of the film can be sensitive, and the film has good thermal stability.

Description

The manufacture method of anisotropic magnetoresistance film

Technical field

The present invention relates to a kind of manufacture method of semiconductor integrated circuit, particularly relate to a kind of manufacture method of anisotropic magnetoresistance film.

Background technology

The functionalization of material is one of trend of material future development, and magnetic material occupies important one seat as a part for functional material in field of new.And along with the development of science and technology, requirement on devices is miniaturized, microminiaturized, makes magnetic membrane material become the focus of current research, wherein the most strikingly giant magnetoresistance effect.The Late Cambrian (Fe/Cr) such as Baibich in 1988 _nthe magneto-resistance effect of multilayer film can reach 60%, and this effect is called as giant magnetoresistance effect.Physicist both domestic and external and material science scholar have done a large amount of work in the fundamental research and practicality of GMR effect, and in succession develop the magneto-electronics components and parts of a series of novel concept, the development for electronic technology brings new revolution.Information storage density depends on the Study and appliance of magnetic thin film to a great extent.Giant magnetoresistance (GMR, TMR) material is widely used in information industry, as: transducer, magnetic recording magnetic reading head, giant magnetoresistance random asccess memory etc.

In giant magnetoresistance multilayer film, as in the structure such as Spin Valve, tunnel junction, permalloy of good performance (NiFe) is one of the most common magnetic layer material, so the preparation technology of research NiFe film will contribute to the preparation of magnetoresistive multilayered film.On the other hand, although the discovery of giant magnetoresistance effect causes global sensation and interest, but the computer playback head made by GMR film at present also exists two key issues of environmental stability and temperature stability difference, so the computer read head made with traditional anisotropic magnetoresistance (AMR) film or transducer commercially still account for main flow.(7.96 × 10 are about because AMR has little saturation field ²a/m) and high magnetic field sensitivity, so amr effect is widely used in magnetic reading head and various kinds of sensors.Now abroad about each major company also constantly to excavate the potentiality of AMR read head.At present, state-of-the-art AMR read head must possess the features such as highfield sensitivity and low noise, to expand its application.In order to reach this object, for AMR read head permalloy must magnetic property good, and do very thin, coercive force is very little, but AMR value is large as far as possible.But along with the thickness of permalloy film reduces, its AMR value also can decline rapidly, and its reason has: the degree of crystallinity of the film that thickness is too thin is poor, adds electron scattering intensity, and the shunting action of resilient coating and protective layer then can be enhanced, and causes AMR value to reduce.

Summary of the invention

Technical problem to be solved by this invention is to provide a kind of manufacture method of anisotropic magnetoresistance film, can increase the AMR value of film when not increasing film thickness, and the magnetic characteristic of film can be made responsive and have good thermal stability.

For solving the problems of the technologies described above, the manufacture method of anisotropic magnetoresistance film provided by the invention comprises the steps:

Step one, provide a silicon nitride film substrate, adopt etching technics to carry out preliminary treatment to increase roughness, the interfere with subsequent film crystal trend film forming of described substrate surface to described substrate.

Step 2, employing PVD process carry out Ni at described substrate surface ₈₁fe ₁₉the film forming of film, Ni ₈₁fe ₁₉the film-forming process of film is made up of multiple deposition technique and etching technics, described Ni ₈₁fe ₁₉each step depositing operation in the film-forming process of film all adopts PVD process deposits, between every two step depositing operations, all carries out once etching technics process in place, described Ni ₈₁fe ₁₉etching technics in the film-forming process of film is for increasing roughness, the interfere with subsequent film crystal trend film forming of film formation surface.

Step 3, at described Ni ₈₁fe ₁₉film surface carries out the film forming of tantalum nitride (TaN) film.

Step 4, to described Ni ₈₁fe ₁₉film and described tantalum nitride membrane carry out annealing in process thus form anisotropic magnetoresistance film.

Further improvement is, pretreated etching technics using plasma etching technics described in step one.

Further improvement is, Ni described in step 2 ₈₁fe ₁₉etching technics using plasma etching technics in the film-forming process of film.

Further improvement is, described Ni ₈₁fe ₁₉the PVD technique of the film-forming process of film adopts physical sputtering technology, and sputtering power is 0.1kw ~ 1kw, and pressure is 1 × 10 ^-8holder ~ 1 × 10 ^-5holder, distinguishes described Ni according to arranging of substrate bias ₈₁fe ₁₉the depositing operation of the film-forming process of film and etching technics, in depositing operation, substrate bias is 0, and in etching technics, substrate bias is 0.1kw ~ 1kw; Described Ni ₈₁fe ₁₉between every two step depositing operations of the film-forming process of film, added by substrate bias, the time is 5 seconds ~ 20 seconds; Described Ni ₈₁fe ₁₉the thickness of film

Further improvement is, adopts physical sputtering film-forming process to form described tantalum nitride membrane in step 3, and the thickness of described tantalum nitride membrane is sputter temperature is 20 DEG C ~ 50 DEG C, and pressure is 1 × 10 ^-8holder ~ 1 × 10 ^-5holder, sputtering power is 0.5kw ~ 2kw.

Further improvement is, the temperature of the annealing in process in step 5 is 400 DEG C, and the processing time is 30 seconds ~ 60 seconds.

The present invention forms coarse structure at film formation surface by utilize follow-up film forming in step one and two before, subsequent thin film crystal can be disturbed to tend to film forming after, even if also the direction of growth of subsequent thin film is no longer fixed on a direction, and the direction of growth can be changed, thus can quality of forming film be improved, the AMR value of film can be increased when not increasing film thickness, and the magnetic characteristic of film can be made responsive and there is good thermal stability.

Accompanying drawing explanation

Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation:

Fig. 1 is embodiment of the present invention method flow diagram;

Fig. 2 is the AMR value of film and the curve chart of deposit etch cycle number of times of the formation of embodiment of the present invention method.

Embodiment

As shown in Figure 1, be embodiment of the present invention method flow diagram; The manufacture method of embodiment of the present invention anisotropic magnetoresistance film comprises the steps:

Step 2, employing PVD process carry out Ni at described substrate surface ₈₁fe ₁₉the film forming of film, Ni ₈₁fe ₁₉the film-forming process of film is made up of multiple deposition technique and etching technics, described Ni ₈₁fe ₁₉each step depositing operation in the film-forming process of film all adopts PVD process deposits, between every two step depositing operations, all carries out once etching technics process in place, described Ni ₈₁fe ₁₉etching technics in the film-forming process of film is for increasing roughness, the interfere with subsequent film crystal trend film forming of film formation surface.Coarse structure is formed at film formation surface before utilizing follow-up film forming in step one and two, after subsequent thin film crystal can be disturbed to tend to film forming, even if also the direction of growth of subsequent thin film is no longer fixed on a direction, and the direction of growth can be changed, thus raising quality of forming film, and increase the AMR value of film.

Described Ni ₈₁fe ₁₉the PVD technique of the film-forming process of film adopts physical sputtering technology, and sputtering power is 0.1kw ~ 1kw, and pressure is 1 × 10 ^-8holder ~ 1 × 10 ^-5holder, distinguishes described Ni according to arranging of substrate bias ₈₁fe ₁₉the depositing operation of the film-forming process of film and etching technics, in depositing operation, substrate bias is 0, and in etching technics, substrate bias is 0.1kw ~ 1kw; Described Ni ₈₁fe ₁₉between every two step depositing operations of the film-forming process of film, added by substrate bias, the time is 5 seconds ~ 20 seconds, utilizes the plasma in process cavity to carry out etching technics.

Described Ni ₈₁fe ₁₉the thickness of film

Step 3, at described Ni ₈₁fe ₁₉film surface carries out the film forming of tantalum nitride membrane.Adopt physical sputtering film-forming process to form described tantalum nitride membrane, the thickness of described tantalum nitride membrane is sputter temperature is 20 DEG C ~ 50 DEG C, and pressure is 1 × 10 ^-8holder ~ 1 × 10 ^-5holder, sputtering power is 0.5kw ~ 2kw.

Step 4, to described Ni ₈₁fe ₁₉film and described tantalum nitride membrane carry out annealing in process thus form anisotropic magnetoresistance film.The temperature of annealing in process is 400 DEG C, and the processing time is 30 seconds ~ 60 seconds.

The embodiment of the present invention is passed through at Ni ₈₁fe ₁₉adopt multiple deposition in the film-forming process of film and etch the method hocketed, can quality of forming film being improved, the AMR value of film be increased when not increasing film thickness, and the magnetic characteristic of film can be made responsive and there is good thermal stability.As shown in Figure 2, the AMR value of film and the curve chart of deposit etch cycle number of times of the formation of embodiment of the present invention method, abscissa is deposit etch cycle number of times, 0 expression has only been carried out a deposit, has not been etched, it is 1 that twice deposit once etches, the like, ordinate is ARM value, and unit is percentage; Described Ni corresponding to each test point ₈₁fe ₁₉the thickness of film the thickness of described tantalum nitride membrane is the temperature of annealing in process is 400 DEG C, and the processing time is 50 seconds.Can find out, the method etched by adopting repeatedly deposit forms Ni ₈₁fe ₁₉film can improve AMR value really.

Above by specific embodiment to invention has been detailed description, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.

Claims

1. a manufacture method for anisotropic magnetoresistance film, is characterized in that, comprises the steps:

Step one, provide a silicon nitride film substrate, adopt etching technics to carry out preliminary treatment to increase the roughness of described substrate surface to described substrate, interfere with subsequent film crystal trend film forming;

Step 2, employing PVD process carry out Ni at described substrate surface ₈₁fe ₁₉the film forming of film, Ni ₈₁fe ₁₉the film-forming process of film is made up of multiple deposition technique and etching technics, described Ni ₈₁fe ₁₉each step depositing operation in the film-forming process of film all adopts PVD process deposits, between every two step depositing operations, all carries out once etching technics process in place, described Ni ₈₁fe ₁₉etching technics in the film-forming process of film is for increasing the roughness of film formation surface, and interfere with subsequent film crystal tends to film forming;

Step 3, at described Ni ₈₁fe ₁₉film surface carries out the film forming of tantalum nitride membrane;

2. the method for claim 1, is characterized in that: pretreated etching technics using plasma etching technics described in step one.

3. the method for claim 1, is characterized in that: Ni described in step 2 ₈₁fe ₁₉etching technics using plasma etching technics in the film-forming process of film.

4. the method as described in claim 1 or 3, is characterized in that: described Ni ₈₁fe ₁₉the PVD technique of the film-forming process of film adopts physical sputtering technology, and sputtering power is 0.1kw ~ 1kw, and pressure is 1 × 10 ^-8holder ~ 1 × 10 ^-5holder, distinguishes described Ni according to arranging of substrate bias ₈₁fe ₁₉the depositing operation of the film-forming process of film and etching technics, in depositing operation, substrate bias is 0, and in etching technics, substrate bias is 0.1kw ~ 1kw; Described Ni ₈₁fe ₁₉between every two step depositing operations of the film-forming process of film, added by substrate bias, the time is 5 seconds ~ 20 seconds; Described Ni ₈₁fe ₁₉the thickness of film

5. the method for claim 1, is characterized in that: adopt physical sputtering film-forming process to form described tantalum nitride membrane in step 3, and the thickness of described tantalum nitride membrane is sputter temperature is 20 DEG C ~ 50 DEG C, and pressure is 1 × 10 ^-8holder ~ 1 × 10 ^-5holder, sputtering power is 0.5kw ~ 2kw.

6. the method for claim 1, is characterized in that: the temperature of the annealing in process in step 5 is 400 DEG C, and the processing time is 30 seconds ~ 60 seconds.